CN101468352A - Method for cleaning sapphire substrate - Google Patents
Method for cleaning sapphire substrate Download PDFInfo
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- CN101468352A CN101468352A CNA2007103058362A CN200710305836A CN101468352A CN 101468352 A CN101468352 A CN 101468352A CN A2007103058362 A CNA2007103058362 A CN A2007103058362A CN 200710305836 A CN200710305836 A CN 200710305836A CN 101468352 A CN101468352 A CN 101468352A
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- sapphire substrate
- cleaning
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- acetone
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Abstract
The invention relates to a method for cleaning a sapphire substrate, which comprises a step of organic solvent ultrasonic cleaning at normal temperature; and a step of soaking by acetone when heated. Through the implementation of the method for cleaning the sapphire substrate, a trichloroethylene reagent used in the prior cleaning method is removed, so environmental pollution is reduced and operators are prevented from being poisoned; and during cleaning, the ultrasonic cleaning and the heating cleaning are used to save time and improve the cleaning efficiency and the cleaning quality. The method has the advantages of simple technology and convenient operation, and meets the requirement of environmental protection.
Description
Technical field
The present invention relates to cleaning method, more particularly, relate to a kind of method for cleaning sapphire substrate.
Background technology
For making led chip, selecting for use of backing material is the problem of overriding concern.Should adopt which kind of suitable substrate, need select according to the requirement of equipment and LED device.Generally adopt Sapphire Substrate at present on the market.Usually, the epitaxial loayer of GaN sill and device mainly is grown on the Sapphire Substrate.Sapphire Substrate has many advantages: at first, the production technology maturation of Sapphire Substrate, device quality are better; Secondly, sapphire stability is fine, can be used in the high growth temperature process; At last, sapphire mechanical strength height is easy to handle and clean.Therefore, most of technologies generally all with sapphire as substrate.In traditional method for cleaning sapphire substrate, adopt virose trichloro-ethylene to clean, these personnel that not only can cause poison, and pollute the environment; And, influence cleaning efficiency owing in operating process, do not use the ultrasonic scavenging period that makes long, and need in airtight environment, carry out high temperature and clean, generally can under 125 ℃ of conditions, clean.
Summary of the invention
The technical problem to be solved in the present invention is that the above-mentioned defective at prior art provides a kind of method for cleaning sapphire substrate.
The technical solution adopted for the present invention to solve the technical problems is: construct a kind of method for cleaning sapphire substrate, may further comprise the steps: acetone soaking and washing under isopropyl alcohol ultrasonic cleaning and acetone ultrasonic cleaning and the heating condition under normal room temperature.
In method for cleaning sapphire substrate of the present invention, may further comprise the steps successively:
A, under normal room temperature, Sapphire Substrate is soaked in the isopropyl alcohol organic solvent, cooperate the ultrasonic wave effect, cleaned about 1～3 minute;
B, under normal room temperature, Sapphire Substrate is soaked in the acetone organic solvent, cooperate the ultrasonic wave effect, cleaned about 1～5 minute;
C. under fluidized state, Sapphire Substrate was soaked in the acetone organic solvent 1～2 minute;
D. the Sapphire Substrate that will clean is taken out, and carries out heating, drying.
In method for cleaning sapphire substrate of the present invention, in described step a, under normal room temperature, Sapphire Substrate is soaked in the isopropyl alcohol organic solvent, cooperate the ultrasonic wave effect, cleaned about 3 minutes;
At method for cleaning sapphire substrate of the present invention, it is characterized in that, in described step b, under normal room temperature, Sapphire Substrate is soaked in the acetone organic solvent, cooperate the ultrasonic wave effect, cleaned about 3 minutes.
In method for cleaning sapphire substrate of the present invention, in described step c, under fluidized state, Sapphire Substrate was soaked in the acetone organic solvent about 1.5 minutes.
In method for cleaning sapphire substrate of the present invention, described frequency of ultrasonic is 10～200KHz.
Implement method for cleaning sapphire substrate of the present invention, have following beneficial effect: cancelled the trichloro-ethylene reagent that uses in the conventional clean method, reduced environmental pollution, avoided personnel to poison; In cleaning process, use ultrasonic wave and heated wash, can save scavenging period, improve cleaning efficiency and cleaning quality; Technology is simple, and is easy to operate, satisfies environmental requirement.
The specific embodiment
The third generation semi-conducting material that with GaN is representative is still all well remedying the intrinsic shortcoming of conventional semiconductor material itself in optical characteristics aspect the electrology characteristic, thereby it is rapid to undergo an unusual development in recent years.
The cleaning method of Sapphire Substrate of the present invention is meant the cleaning of back-end process, the cleaning after promptly grinding.
In the method for cleaning sapphire substrate of the present invention, under normal room temperature, use isopropyl alcohol organic solvent and acetone organic solvent, under hyperacoustic cooperation, clean.In force, the cleaning sequence of isopropyl alcohol ultrasonic cleaning and acetone ultrasonic cleaning can change.After finishing ultrasonic cleaning, then under heating condition, Sapphire Substrate is soaked in the acetone organic solvent, be for further processing.
In a preferred embodiment, in the method for cleaning sapphire substrate, may further comprise the steps successively:
A, under normal room temperature, Sapphire Substrate is soaked in the isopropyl alcohol organic solvent, cooperate the ultrasonic wave effect, cleaned about 1～3 minute;
B, under normal room temperature, Sapphire Substrate is soaked in the acetone organic solvent, cooperate the ultrasonic wave effect, cleaned about 1～5 minute.
C, under fluidized state, Sapphire Substrate is soaked in the acetone organic solvent about 1～2 minute of heated wash.
D, the Sapphire Substrate that will clean are taken out, and are placed on the hand basket, are placed on the heating plate then and dry, and cleaning is finished.
Preferably, in described step a, cleaned about 3 minutes;
In force, acetone can be cleaned and be divided into two steps, that is: c, under normal room temperature, Sapphire Substrate is soaked in the acetone organic solvent, cooperate the ultrasonic wave effect, cleaned about 2 or 2.5 minutes; B2, under fluidized state, Sapphire Substrate is soaked in the acetone organic solvent about 1.5 minutes of soaking and washing.
The power of employed supersonic generator is that 100w～300w, frequency are 10～200KHz in the present invention.
Claims (7)
1, a kind of method for cleaning sapphire substrate is characterized in that, may further comprise the steps: under normal room temperature, and the organic solvent ultrasonic cleaning; And under heating condition, acetone soaks.
2, method for cleaning sapphire substrate according to claim 1 is characterized in that, described organic solvent is isopropyl alcohol and acetone.
3, method for cleaning sapphire substrate according to claim 2 is characterized in that, may further comprise the steps successively:
A, under normal room temperature, Sapphire Substrate is soaked in the isopropyl alcohol organic solvent, cooperate the ultrasonic wave effect, cleaned about 1～3 minute;
B, under normal room temperature, Sapphire Substrate is soaked in the acetone organic solvent, cooperate the ultrasonic wave effect, cleaned about 1～5 minute;
C. under fluidized state, Sapphire Substrate was soaked in the acetone organic solvent 1～2 minute;
D. the Sapphire Substrate that will clean is taken out, and carries out heating, drying.
4, method for cleaning sapphire substrate according to claim 3 is characterized in that, in described step a, under normal room temperature, Sapphire Substrate is soaked in the isopropyl alcohol organic solvent, cooperates the ultrasonic wave effect, cleans about 3 minutes.
5, method for cleaning sapphire substrate according to claim 3 is characterized in that, in described step b, under normal room temperature, Sapphire Substrate is soaked in the acetone organic solvent, cooperates the ultrasonic wave effect, cleans about 3 minutes.
6, method for cleaning sapphire substrate according to claim 3 is characterized in that, in described step c, under fluidized state, Sapphire Substrate is soaked in the acetone organic solvent about 1.5 minutes.
According to the arbitrary described method for cleaning sapphire substrate of claim 1～6, it is characterized in that 7, described frequency of ultrasonic is 10～200KHz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007103058362A CN101468352A (en) | 2007-12-27 | 2007-12-27 | Method for cleaning sapphire substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007103058362A CN101468352A (en) | 2007-12-27 | 2007-12-27 | Method for cleaning sapphire substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101468352A true CN101468352A (en) | 2009-07-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007103058362A Pending CN101468352A (en) | 2007-12-27 | 2007-12-27 | Method for cleaning sapphire substrate |
Country Status (1)
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| CN (1) | CN101468352A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102218410A (en) * | 2011-04-19 | 2011-10-19 | 浙江露笑光电有限公司 | Method for cleaning polished sapphire |
| CN102489471A (en) * | 2011-12-20 | 2012-06-13 | 深圳市华测检测技术股份有限公司 | Method for cleaning sampling bottles |
| CN103011897A (en) * | 2012-10-24 | 2013-04-03 | 江苏吉星新材料有限公司 | Preparation method of sapphire crystal recycled material |
| CN103111434A (en) * | 2013-01-15 | 2013-05-22 | 安徽康蓝光电股份有限公司 | Final cleaning technique in sapphire processing |
| CN103541009A (en) * | 2013-08-20 | 2014-01-29 | 曾锡强 | Recycling method of sapphire crystal residue |
| CN103639141A (en) * | 2013-11-26 | 2014-03-19 | 浙江上城科技有限公司 | Sapphire touch panel cleaning method |
| CN105280477A (en) * | 2015-09-28 | 2016-01-27 | 山东浪潮华光光电子股份有限公司 | Cleaning technology for sapphire wafers |
| CN109735397A (en) * | 2018-12-25 | 2019-05-10 | 大连奥首科技有限公司 | A kind of LED Sapphire Substrate paraffin removal removes particle cleaning agent, preparation method, purposes and cleaning method |
-
2007
- 2007-12-27 CN CNA2007103058362A patent/CN101468352A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102218410A (en) * | 2011-04-19 | 2011-10-19 | 浙江露笑光电有限公司 | Method for cleaning polished sapphire |
| CN102489471A (en) * | 2011-12-20 | 2012-06-13 | 深圳市华测检测技术股份有限公司 | Method for cleaning sampling bottles |
| CN103011897B (en) * | 2012-10-24 | 2014-08-06 | 江苏吉星新材料有限公司 | Preparation method of sapphire crystal recycled material |
| CN103011897A (en) * | 2012-10-24 | 2013-04-03 | 江苏吉星新材料有限公司 | Preparation method of sapphire crystal recycled material |
| CN103111434A (en) * | 2013-01-15 | 2013-05-22 | 安徽康蓝光电股份有限公司 | Final cleaning technique in sapphire processing |
| CN103541009A (en) * | 2013-08-20 | 2014-01-29 | 曾锡强 | Recycling method of sapphire crystal residue |
| CN103541009B (en) * | 2013-08-20 | 2016-03-02 | 江西东海蓝玉光电科技有限公司 | A kind of reuse method of sapphire crystal residue material |
| CN103639141A (en) * | 2013-11-26 | 2014-03-19 | 浙江上城科技有限公司 | Sapphire touch panel cleaning method |
| CN103639141B (en) * | 2013-11-26 | 2015-09-30 | 浙江上城科技有限公司 | A kind of cleaning method of sapphire touch panel |
| CN105280477A (en) * | 2015-09-28 | 2016-01-27 | 山东浪潮华光光电子股份有限公司 | Cleaning technology for sapphire wafers |
| CN105280477B (en) * | 2015-09-28 | 2018-03-09 | 山东浪潮华光光电子股份有限公司 | A kind of cleaning of sapphire wafer |
| CN109735397A (en) * | 2018-12-25 | 2019-05-10 | 大连奥首科技有限公司 | A kind of LED Sapphire Substrate paraffin removal removes particle cleaning agent, preparation method, purposes and cleaning method |
| CN109735397B (en) * | 2018-12-25 | 2020-08-04 | 大连奥首科技有限公司 | Wax and particle removing cleaning agent for L ED sapphire substrate, preparation method, application and cleaning method |
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Open date: 20090701 |