CN105154268A - Cleaning fluid capable of reducing thickness of damaged layer of surface of silicon wafer and cleaning method - Google Patents
Cleaning fluid capable of reducing thickness of damaged layer of surface of silicon wafer and cleaning method Download PDFInfo
- Publication number
- CN105154268A CN105154268A CN201510541614.5A CN201510541614A CN105154268A CN 105154268 A CN105154268 A CN 105154268A CN 201510541614 A CN201510541614 A CN 201510541614A CN 105154268 A CN105154268 A CN 105154268A
- Authority
- CN
- China
- Prior art keywords
- silicon chip
- cleaning
- clean
- mass percentage
- alkali
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention provides cleaning fluid capable of reducing thickness of a damaged layer of a surface of a silicon wafer. The cleaning fluid comprises alkali, cleaning agents and water; the alkali is sodium hydroxide or potassium hydroxide; the mass percentage concentration of the alkali in the cleaning fluid is 3%-12%; and the mass percentage concentration of the cleaning agents in the cleaning fluid is 3%-6%. The invention also provides a cleaning method capable of reducing the thickness of the damaged layer of the surface of the silicon wafer. The cleaning method comprises the following steps of (1) performing pretreatment on a cut silicon wafer so as to remove impurities on the surface of the silicon wafer; (2) placing the silicon wafer pretreated in the step (1) in the cleaning fluid, and cleaning the silicon wafer for 200-500 seconds at the temperature of 40-60 DEG C; and (3) washing the silicon wafer cleaned in the step (2) with water, and drying to obtain the silicon wafer of which the thickness of the damage layer of the surface is reduced. The cleaning fluid has simple ingredients and is low in cost. The cleaning method is simple and practicable, the thickness of the damaged layer of the surface of the silicon wafer can be reduced effectively, mechanical performance of the silicon wafer is improved, and photoelectric conversion efficiency can be improved after the silicon wafer is prepared into a battery.
Description
Technical field
The present invention relates to the cleaning field of silicon chip, be specifically related to a kind ofly reduce the scavenging solution of damaged layer on surface of silicon slice thickness and a kind of purging method reducing damaged layer on surface of silicon slice thickness.
Background technology
Silicon chip is in multi-wire saw process, and cutting blade material can carry out grinding to silicon chip surface thus produce certain damage, when especially a large amount of use recovery sand cuts, is easy to produce surface damage layer at silicon chip surface owing to reclaiming sand cutting power deficiency.Surface damage layer can reduce the physical strength of silicon chip, thus causes silicon chip easily cracked, causes silicon chip higher for the preparation of battery manufacturing procedure fragmentation rate during solar cell; But because the making herbs into wool of surface damage layer to battery is most important, if remove the surface damage layer of silicon chip completely, desirable battery pile face cannot be obtained by causing, directly causing the reduction of battery efficiency.Therefore, in order to obtain the high and silicon chip that battery efficiency is high of physical strength, need reduce the certain thickness surface damage layer of silicon chip surface but surface damage layer can not be removed completely.
Existing silicon wafer cleaning method generally uses the alkali lye of silicon slice detergent or lower concentration to clean silicon chip, although can remove the remained on surface material of silicon chip if any machine thing, metal impurities after cleaning, the surface damage layer affecting silicon chip physical strength is not often removed.Therefore, do not affect again silicon chip follow-up making herbs into wool while of how reducing the thickness of damaged layer on surface of silicon slice and seem very meaningful.
Summary of the invention
For solving the problem, the invention provides a kind of scavenging solution reducing damaged layer on surface of silicon slice thickness, this scavenging solution can reduce the thickness of damaged layer on surface of silicon slice, present invention also offers a kind of purging method reducing damaged layer on surface of silicon slice thickness, this purging method can reduce certain thickness surface damage layer, improves the physical strength of surface damage layer, does not affect the follow-up making herbs into wool of silicon chip simultaneously, the method technique is simple, cost is lower, is applicable to industrialization and produces.
First aspect present invention provides a kind of scavenging solution reducing damaged layer on surface of silicon slice thickness, comprise alkali, clean-out system and water, described alkali is sodium hydroxide or potassium hydroxide, the mass percentage concentration of described alkali in described scavenging solution is 3%-12%, and the mass percentage concentration of described clean-out system in described scavenging solution is 3%-6%.
Preferably, the mass percentage concentration of described alkali in described scavenging solution is 3%-8%.
Under the mass percentage concentration of described alkali, evenly, effectively can reduce the surface damage layer of silicon chip.
Preferably, described clean-out system is the solution comprising sylvite, tensio-active agent, cleaning additive and metal chelating agent.
The scavenging solution of the reduced damaged layer on surface of silicon slice thickness that first aspect present invention provides, composition is simple, cost is lower, can be used for effectively reducing described damaged layer on surface of silicon slice thickness, improve the mechanical property of silicon chip, contribute to the lifting that silicon chip is prepared into photoelectric transformation efficiency after battery simultaneously.
Second aspect present invention provides a kind of purging method reducing damaged layer on surface of silicon slice thickness, comprises the following steps:
(1) silicon chip after cutting is carried out pre-treatment, to remove the impurity of described silicon chip surface;
(2) scavenging solution will be placed in through step (1) pretreated silicon chip, under 40-60 DEG C of condition, clean 200s-500s; Described scavenging solution comprises alkali, clean-out system and water, and described alkali is sodium hydroxide or potassium hydroxide, and the mass percentage concentration of described alkali in described scavenging solution is 3%-12%, and the mass percentage concentration of described clean-out system in described scavenging solution is 3%-6%;
(3) silicon chip after step (2) cleaning carried out washing, obtain the silicon chip that surface damage layer thickness reduces after drying.
Preferably, in step (2), the temperature of described cleaning is 48-55 DEG C.
Preferably, in step (2), the time of described cleaning is 240s-320s.
Preferably, in step (2), in described scavenging solution, one or more in air, oxygen and ozone are passed into.
Preferably, the thickness of the surface damage layer of described silicon chip reduces 0.2-0.4 μm.
Silicon chip after cutting is carried out pre-treatment to remove the impurity such as the organism of described silicon chip surface, particle and metal ion by described step (1).
Preferably, in step (1), described pre-treatment be by described cutting after silicon chip be placed in acid solution cleaning, pure water cleaning and mixing solutions successively and clean, described mixing solutions comprises alkali that mass percentage concentration is 0-0.5% and mass percentage concentration is the clean-out system of 3%-6%.
Preferably, in step (1), described pre-treatment be by described cutting after silicon chip be placed in pure water cleaning successively, be that the solution cleaning of 3%-6% clean-out system and mixing solutions clean containing mass percentage concentration, described mixing solutions comprises alkali that mass percentage concentration is 0-0.5% and mass percentage concentration is the clean-out system of 3%-6%.
A kind of purging method reducing damaged layer on surface of silicon slice thickness that second aspect present invention provides, method is simple, running cost is lower, effectively can reduce the surface damage layer thickness of silicon chip, improve the mechanical property of silicon chip, contribute to the lifting that silicon chip is prepared into photoelectric transformation efficiency after battery simultaneously.
To sum up, beneficial effect of the present invention comprises the following aspects:
1, the cleaning fluid composition of reduced damaged layer on surface of silicon slice thickness that provides of first aspect present invention is simple, cost is lower, effectively can reduce the surface damage layer of wafer sections;
2, the purging method technique of reduced damaged layer on surface of silicon slice thickness that provides of second aspect present invention is simple, running cost is lower, effectively can reduce the surface damage layer of silicon chip, improve the mechanical property of silicon chip, contribute to the lifting that silicon chip is prepared into photoelectric transformation efficiency after battery simultaneously.
Accompanying drawing explanation
Fig. 1 is the process flow sheet of the purging method of the reduced damaged layer on surface of silicon slice thickness of the embodiment of the present invention 1.
Embodiment
The following stated is the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications are also considered as protection scope of the present invention.
First aspect present invention provides a kind of scavenging solution reducing damaged layer on surface of silicon slice thickness, comprise alkali, clean-out system and water, alkali is sodium hydroxide or potassium hydroxide, and the mass percentage concentration of alkali in scavenging solution is 3%-12%, and the mass percentage concentration of clean-out system in scavenging solution is 3%-6%.
In embodiment of the present invention, the mass percentage concentration of alkali in scavenging solution is 3%-8%.
In embodiment of the present invention, the mass percentage concentration of alkali in scavenging solution is 3%-5%.
In embodiment of the present invention, the mass percentage concentration of alkali in scavenging solution is 5%-8%.
In embodiment of the present invention, the mass percentage concentration of alkali in scavenging solution is 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%, 11% or 12%.
In embodiment of the present invention, the mass percentage concentration of clean-out system in scavenging solution is 3%, 4%, 5% or 6%.
In embodiment of the present invention, silicon chip is silicon single crystal silicon chip or polysilicon silicon chip.
In embodiment of the present invention, containing one or more in air, oxygen and ozone in scavenging solution.
In embodiment of the present invention, clean-out system is silicon slice detergent conventional in industry.
In embodiment of the present invention, clean-out system is the solution comprising sylvite, tensio-active agent, cleaning additive and metal chelating agent.
The scavenging solution of the reduced damaged layer on surface of silicon slice thickness that first aspect present invention provides, composition is simple, cost is lower, can be used for the surface damage layer thickness effectively reducing silicon chip, improve the mechanical property of silicon chip, contribute to the lifting that silicon chip is prepared into photoelectric transformation efficiency after battery simultaneously.
Second aspect present invention provides a kind of purging method reducing damaged layer on surface of silicon slice thickness, comprises the following steps:
(1) silicon chip after cutting is carried out pre-treatment, to remove the impurity of silicon chip surface;
(2) scavenging solution will be placed in through step (1) pretreated silicon chip, under 40-60 DEG C of condition, clean 200s-500s; Scavenging solution comprises alkali, clean-out system and water, and alkali is sodium hydroxide or potassium hydroxide, and the mass percentage concentration of alkali in scavenging solution is 3%-12%, and the mass percentage concentration of clean-out system in scavenging solution is 3%-6%;
(3) silicon chip after step (2) cleaning carried out washing, obtain the silicon chip that surface damage layer thickness reduces after drying.
It is the alkali of 3%-12% and the clean-out system of 3%-6% that scavenging solution of the present invention comprises mass percentage concentration, to in Wafer Cleaning process, clean-out system is except reducing surface damage layer, silicon chip surface can also be attached to, make alkali more even to the corrosion of silicon chip, avoid alkali to cause macroscopic irregularity to silicon chip.Therefore, alkali and clean-out system play synergy, effectively and equably can reduce the surface damage layer thickness of silicon chip.
In embodiment of the present invention, scavenging solution is made up of alkali, clean-out system and water, and alkali is sodium hydroxide or potassium hydroxide, and the mass percentage concentration of alkali in scavenging solution is 3%-12%, and the mass percentage concentration of clean-out system in scavenging solution is 3%-6%, and all the other are water.
In embodiment of the present invention, the mass percentage concentration of alkali in scavenging solution is 3%-8%.Under this alkali concn, can damaged layer on surface of silicon slice be reduced, strong corrosion can not be produced to silicon chip again simultaneously, avoid the macroscopic irregularity causing silicon chip.
In embodiment of the present invention, the mass percentage concentration of alkali in scavenging solution is 3%-5%.
In embodiment of the present invention, the mass percentage concentration of alkali in scavenging solution is 5%-8%.
In embodiment of the present invention, the mass percentage concentration of alkali in scavenging solution is 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%, 11% or 12%.
In embodiment of the present invention, the mass percentage concentration of clean-out system in scavenging solution is 3%, 4%, 5% or 6%.
Rinse liquid temperature is higher, and speed of reaction is faster, makes anisotropic in corrosion process strengthen simultaneously, is unfavorable for the uniform corrosion of silicon chip; Temperature is lower, be more conducive to the isotropic corrosion of silicon chip, but erosion rate can weaken, and is unfavorable for effective minimizing of surface damage layer thickness.In embodiment of the present invention, in step (2), the temperature of cleaning is 48-55 DEG C.
Under this cleaning temperature, silicon chip can by uniform corrosion and erosion rate is very fast.
In embodiment of the present invention, the temperature of cleaning is 48-52 DEG C.
In embodiment of the present invention, the temperature of cleaning is 50-55 DEG C.
In embodiment of the present invention, the temperature of cleaning is 48 DEG C, 49 DEG C, 50 DEG C, 51 DEG C, 52 DEG C, 53 DEG C, 54 DEG C or 55 DEG C.
In embodiment of the present invention, in step (2), the time of cleaning is 240s-320s.
Within the scope of this scavenging period, while can effectively reducing surface damage layer thickness, surface damage layer can not be removed completely again.
In embodiment of the present invention, the time of cleaning is 240s-300s.
In embodiment of the present invention, the time of cleaning is 300s-320s.
In embodiment of the present invention, the time of cleaning is 280s-300s.
In embodiment of the present invention, the time of cleaning is 240s, 242s, 245s, 247s, 250s, 252s, 255s, 257s, 260s, 262s, 265s, 267s, 270s, 272s, 275s, 277s, 280s, 282s, 285s, 287s, 290s, 292s, 295s, 297s, 300s, 302s, 305s, 307s, 310s, 315s, 317s or 320s.
In embodiment of the present invention, in step (2), in scavenging solution, pass into one or more in air, oxygen and ozone.
In embodiment of the present invention, in step (2), the speed that passes into of one or more in scavenging solution in air, oxygen and ozone is 1L/min-5L/min.
In use scavenging solution cleaning silicon chip process, the corrosion of alkali to silicon chip is mainly anisotropic etch, be unfavorable for the uniform corrosion of silicon chip like this, by passing into one or more in air, oxygen or ozone in scavenging solution, the oxygen level in scavenging solution can be improved, the corrosion of alkali to silicon chip is changed to isotropic etch from anisotropic etch, is conducive to the uniform corrosion to silicon chip.
In embodiment of the present invention, in step (2), carry out ultrasonic in cleaning process, ultrasonic frequency is 30-40HZ simultaneously, and ultrasonic power is 1-2kw.
In step (1), the silicon chip after cutting is carried out pre-treatment, to remove the impurity of silicon chip surface as organism, particle and metal ion etc.
In embodiment of the present invention, in step (1), pre-treatment be by cutting after silicon chip be placed in acid solution cleaning, pure water cleaning and mixing solutions successively and clean, mixing solutions comprises alkali that mass percentage concentration is 0-0.5% and mass percentage concentration is the clean-out system of 3%-6%.
In embodiment of the present invention, mixing solutions is made up of alkali, clean-out system and water, and the mass percentage concentration of alkali is 0-0.5%, and the mass percentage concentration of clean-out system is 3%-6%, and all the other are water.
Adopt acid solution cleaning can remove the dirty and metal ion of the part of silicon chip surface; Adopt pure water cleaning can remove the residual acid solution of silicon chip surface; The dirty as organism, particle etc. of silicon chip surface can be removed by the cleaning of the mixing solutions containing alkali and clean-out system.
In embodiment of the present invention, in step (1), pre-treatment be by cutting after silicon chip be placed in pure water cleaning successively, be that the solution cleaning of 3%-6% clean-out system and mixing solutions clean containing mass percentage concentration, mixing solutions comprises alkali that mass percentage concentration is 0-0.5% and mass percentage concentration is the clean-out system of 3%-6%.
In embodiment of the present invention, mixing solutions is made up of alkali, clean-out system and water, and the mass percentage concentration of alkali is 0-0.5%, and the mass percentage concentration of clean-out system is 3%-6%, and all the other are water.
In embodiment of the present invention, when the solution that it is the clean-out system of 3%-6% that silicon chip is placed in containing mass percentage concentration cleans, this solution is made up of clean-out system and water, and the mass percentage concentration of clean-out system is 3%-6%, and all the other are water.
Adopt pure water can remove the dirty and metal ion of the part of silicon chip surface; Adopt the cleaning of the solution containing clean-out system partly can remove the dirty as organism, particle etc. of silicon chip surface, adopting the mixing solutions containing alkali and clean-out system to carry out cleaning can organics removal, particle etc.
In embodiment of the present invention, acid solution is citric acid solution, and in citric acid solution, the mass percentage concentration of citric acid is 1%-5%.
In embodiment of the present invention, the cleaning temperature of silicon chip in citric acid solution is 55 DEG C-65 DEG C, and scavenging period is 240s-320s.
In embodiment of the present invention, the cleaning temperature of silicon chip in pure water is 30 DEG C-40 DEG C, and scavenging period is 240s-320s.
In embodiment of the present invention, silicon chip carries out overflow washing in pure water cleaning process.
In embodiment of the present invention, alkali is sodium hydroxide or potassium hydroxide.
In embodiment of the present invention, the cleaning temperature of silicon chip in the solution of clean-out system containing mass percentage concentration being 3%-6% is 48-55 DEG C, and scavenging period is 240s-320s.
In embodiment of the present invention, the cleaning temperature of silicon chip in mixing solutions is 48-55 DEG C, and scavenging period is 240s-320s.
In embodiment of the present invention, the resistance of pure water is more than 10 megohms, and the purity of alkali is more than analytical pure.
By the cleaning of step (1), the impurity such as residual for silicon chip surface organism, particle and metal ion can be cleaned up, silicon chip surface is remained without dirt substantially, erosion when corruption being carried out to silicon chip subsequently through scavenging solution, because silicon chip surface covers without dirt, can guarantee in corrosion process, the corrosion of silicon chip regional is more even, avoids corroding uneven problem.
In embodiment of the present invention, in step (3), silicon chip after step (2) cleaning is washed, dry, concrete operations are: silicon chip step (2) obtained carries out three pure water rinsings successively, first time rinsing is at 45 DEG C-60 DEG C temperature underflow stream rinsing 240s-320s, second time rinsing is at 45 DEG C-60 DEG C temperature underflow stream rinsing 240s-320s, third time rinsing is at 40 DEG C-65 DEG C temperature underflow stream rinsing 250s-280s, after third time rinsing, silicon chip is carried 20s-50s slowly, silicon chip is departed to make silicon chip surface overwhelming majority moisture, then silicon chip is entered Drying tunnel and carry out drying, drying temperature is 90 DEG C-100 DEG C, time of drying is 240s-320s.
By washing and the drying of step (3), can the residual scavenging solution of removal step (2) silicon chip surface.
The method of minimizing damaged layer on surface of silicon slice provided by the invention, first by the residue of silicon chip surface can be removed as the impurity such as organism, particle to silicon chip pre-treatment, be conducive to the follow-up uniform corrosion to silicon chip, then by the cleaning of scavenging solution, the surface damage layer of silicon chip can be reduced, finally by rinsing and oven dry, remove the scavenging solution that silicon chip surface is remaining, obtain cleaning, dry silicon chip.
In embodiment of the present invention, silicon chip after cutting is placed in silicon chip automatic cleaning equipment clean, silicon chip automatic cleaning equipment is provided with 7 rinse baths and 1 Drying tunnel successively, be provided with acid solution, pure water and mixing solutions in 1 groove, 2 grooves and 3 grooves successively or be provided with pure water successively, be solution and the mixing solutions of 3%-6% clean-out system containing mass percentage concentration, mixing solutions comprises alkali that mass percentage concentration is 0-0.5% and mass percentage concentration is the clean-out system of 3%-6%; Scavenging solution is provided with in 4 grooves, scavenging solution comprises alkali, clean-out system and water, and alkali is sodium hydroxide or potassium hydroxide, and the mass percentage concentration of alkali in scavenging solution is 3%-12%, the mass percentage concentration of clean-out system in scavenging solution is 3%-6%, is equipped with pure water in 5 grooves, 6 grooves and 7 grooves.
Silicon chip after cutting is placed in silicon chip automatic cleaning equipment clean, silicon chip automatic cleaning equipment is provided with 7 rinse baths and 1 Drying tunnel successively, first cleans to silicon chip the impurity removing silicon chip surface at 1 groove, 2 grooves and 3 grooves successively; Secondly, in 4 grooves, the surface damage layer thickness reducing silicon chip is cleaned to silicon chip; Finally, in 5 grooves, 6 grooves and 7 grooves, carry out three washings successively, the silicon chip obtained enters Drying tunnel and dries after proposing dehydration slowly, obtains the silicon chip that surface damage layer thickness reduces.
In embodiment of the present invention, carry out ultrasonic in cleaning process in each rinse bath, ultrasonic frequency is 30-40HZ, and ultrasonic power is 1-2kw.
Silicon chip automatic cleaning equipment is the cleaning equipment that prior art is commonly used, and by arranging different cleaning solutions in the different rinse baths of silicon chip automatic cleaning equipment, purposively can remove the surface damage layer thickness of silicon chip surface residuals and minimizing silicon chip.Wherein, by the cleaning at 1-3 groove, can effectively remove in cutting process due to pollution that mortar and steel wire and other contactants cause silicon chip, as organic impurity contamination, particle contaminant, metal ion contamination etc., the silicon chip surface contamination-free obtained remains, contribute to the follow-up uniform corrosion to silicon chip, then by the cleaning of the scavenging solution of 4 grooves, damaged layer on surface of silicon slice thickness can be reduced, the cleaning eventually passing 5-7 groove can remove the residual alkali lye etc. of silicon chip surface, eventually passes the silicon chip that oven dry is cleaned, clean and surface damage layer thickness is less.
In embodiment of the present invention, the thickness of the surface damage layer of silicon chip reduces 0.2-0.4 μm.
More or the less performance that all can affect silicon chip of surface damage layer removal amount.Accurately can be controlled at 0.2-0.4um the thickness reduction of damaged layer on surface of silicon slice by purging method of the present invention, under the thickness range of this reduction, partly can remove damaged layer on surface of silicon slice, be conducive to the mechanical property improving silicon chip, simultaneously remaining surface damage layer is conducive to follow-up battery leather producing process.
Therefore, the present invention utilizes existing cleaning equipment, realizes the object that reducing portion divides surface damage layer thickness while cleaning silicon chip; Filled a prescription by differentiation, silicon chip surface is corroded more even, method therefor is simple, and running cost is lower; The minimizing of damaged layer on surface of silicon slice, improves the mechanical property of silicon chip, contributes to the lifting that silicon chip is prepared into photoelectric transformation efficiency after battery simultaneously.
A kind of purging method reducing damaged layer on surface of silicon slice thickness that second aspect present invention provides is simple, running cost is lower, effectively can reduce the surface damage layer thickness of silicon chip, improve the mechanical property of silicon chip, contribute to the lifting that silicon chip is prepared into photoelectric transformation efficiency after battery simultaneously.
Embodiment 1:
Reduce a method for damaged layer on surface of silicon slice thickness, as shown in Figure 1, Fig. 1 is the process flow sheet of the purging method of the reduced damaged layer on surface of silicon slice thickness of the embodiment of the present invention 1, comprises the following steps:
(1) batch of 200 monocrystalline silicon pieces are put into 1 groove and carry out citric acid solution ultrasonic cleaning, in 1 groove citric acid solution, the mass percentage concentration of citric acid is 3%, cleaning temperature is 60 DEG C, and scavenging period is 300s, the dirty and metal ion with the part removing silicon chip surface;
(2) silicon chip after step (1) pickling is put into 2 grooves and carry out pure water ultrasonic cleaning, cleaning temperature is 35 DEG C, and scavenging period is 300s, removes the residual acid solution of silicon chip surface by pure water;
(3) silicon chip after step (2) being washed is put into 3 grooves and is carried out mixing solutions ultrasonic cleaning, mixing solutions in 3 grooves comprises clean-out system, alkali and pure water, the mass percentage concentration of clean-out system is 5%, alkali is potassium hydroxide, and the mass percentage concentration of alkali is 0.3%, and all the other are pure water, cleaning temperature is 50 DEG C, scavenging period 300s, to remove the dirty as organism, particle etc. of silicon chip surface, obtains the silicon chip that condition of surface is homogeneous;
(4) silicon chip after step (3) being cleaned is placed in 4 grooves and carries out scavenging solution ultrasonic cleaning, 4 groove scavenging solutions are made up of clean-out system, alkali and pure water, the mass percentage concentration of clean-out system is 5%, alkali is potassium hydroxide, the mass percentage concentration of alkali is 3%, cleaning temperature is 48 DEG C, and scavenging period is 240s; Corroded damaged layer on surface of silicon slice by this scavenging solution, in Wafer Cleaning process, supplement air in cell body solution, its consumption is 1L/min simultaneously, increases the oxygen level in scavenging solution, makes silicon slice corrosion more even;
(5) silicon chip after step (4) being cleaned carries out pure water cleaning through 5 grooves, 6 grooves and 7 grooves successively, overflow is carried out in cleaning process, again after wide slow moving water-removal, carry out ultrasonic in rinse cycle, the temperature of 5 grooves, 6 grooves and 7 groove pure water rinsings is followed successively by 50 DEG C, 50 DEG C and 55 DEG C, the time of cleaning is followed successively by 300s, 300s and 270s, the wide slow moving water-removal time is 20s, finally enter the drying that Drying tunnel completes monocrystalline silicon piece, obtain the silicon chip that surface damage layer thickness reduces, drying temperature is 95 DEG C, and time of drying is 300s.
All carry out ultrasonic above in each rinse bath cleaning process, ultrasonic frequency is 40HZ, and ultrasonic power is 2kw.
Before and after test cleaning, the quality of silicon chip, show that purging method of the present invention accurately controls at about 0.2um the thickness reduction of damaged layer on surface of silicon slice after converting.
Embodiment 2:
Reduce a method for damaged layer on surface of silicon slice thickness, comprise the following steps:
(1) batch of 200 polysilicon chips are put into 1 groove and carry out citric acid solution ultrasonic cleaning, in 1 groove citric acid solution, the mass percentage concentration of citric acid is 1%, cleaning temperature is 55 DEG C, and scavenging period is 320s, the dirty and metal ion with the part removing silicon chip surface;
(2) silicon chip after step (1) being cleaned is put into 2 grooves and is carried out pure water ultrasonic cleaning, and cleaning temperature is 30 DEG C, and scavenging period is 320s, removes the residual acid solution of silicon chip surface by pure water;
(3) silicon chip after step (2) being cleaned is put into 3 grooves and is carried out mixing solutions ultrasonic cleaning, mixing solutions in 3 grooves comprises clean-out system, alkali and pure water, the mass percentage concentration of clean-out system is 3%, alkali is sodium hydroxide, and the mass percentage concentration of alkali is 0.5%, and all the other are pure water, cleaning temperature is 48 DEG C, scavenging period is 320s, to remove the dirty as organism, particle etc. of silicon chip surface, obtains the silicon chip that condition of surface is homogeneous;
(4) silicon chip after step (3) being cleaned is placed in 4 grooves and carries out scavenging solution ultrasonic cleaning, 4 groove scavenging solutions comprise clean-out system, alkali and pure water, the mass percentage concentration of clean-out system is 3%, alkali is potassium hydroxide, the mass percentage concentration of alkali is 5%, cleaning temperature is 52 DEG C, and scavenging period is 300s; Corroded damaged layer on surface of silicon slice by this scavenging solution, in Wafer Cleaning process, supplement air in cell body solution, its consumption is 3L/min simultaneously, increases the oxygen level in scavenging solution, makes silicon slice corrosion more even;
(5) silicon chip after step (4) being cleaned carries out pure water overflow rinsing through 5 grooves, 6 grooves and 7 grooves successively, again after wide slow moving water-removal, the temperature of 5 grooves, 6 grooves and 7 groove pure water rinsings is followed successively by 45 DEG C, 45 DEG C and 40 DEG C, the time of cleaning is followed successively by 320s, 320s and 280s, the wide slow moving water-removal time is 50s, finally enters the drying that Drying tunnel completes polysilicon chip, obtains the silicon chip that surface damage layer thickness reduces, drying temperature is 90 DEG C, and time of drying is 320s.
All carry out ultrasonic above in each rinse bath cleaning process, ultrasonic frequency is 40HZ, and ultrasonic power is 2kw.
Before and after test cleaning, the quality of silicon chip, show that the go reduction of purging method of the present invention to damaged layer on surface of silicon slice thickness accurately controls at about 0.3um after converting.
Embodiment 3:
Reduce a method for damaged layer on surface of silicon slice thickness, comprise the following steps:
(1) batch of 200 monocrystalline silicon pieces are put into 1 groove and carry out citric acid solution ultrasonic cleaning, in 1 groove citric acid solution, the mass percentage concentration of citric acid is 5%, cleaning temperature is 65 DEG C, and scavenging period is 240s, the dirty and metal ion with the part removing silicon chip surface;
(2) silicon chip after step (1) being cleaned is put into 2 grooves and is carried out pure water ultrasonic cleaning, and cleaning temperature is 40 DEG C, and scavenging period is 240s, removes the residual acid solution of silicon chip surface by pure water;
(3) silicon chip after step (2) being cleaned is put into 3 grooves and is carried out mixing solutions ultrasonic cleaning, mixing solutions in 3 grooves comprises clean-out system, alkali and pure water, the mass percentage concentration of clean-out system is 6%, alkali is potassium hydroxide, and the mass percentage concentration of alkali is 0.5%, and all the other are pure water, cleaning temperature is 55 DEG C, scavenging period is 240s, to remove the dirty as organism, particle etc. of silicon chip surface, obtains the silicon chip that condition of surface is homogeneous;
(4) silicon chip after step (3) being cleaned is placed in 4 grooves and carries out scavenging solution ultrasonic cleaning, 4 groove scavenging solutions comprise clean-out system, alkali and pure water, the mass percentage concentration of clean-out system is 6%, alkali is potassium hydroxide, the mass percentage concentration of alkali is 8%, cleaning temperature is 55 DEG C, and scavenging period is 320s; Corroded damaged layer on surface of silicon slice by this scavenging solution, simultaneously toward supplemental ozone in cell body solution in Wafer Cleaning process, its consumption is 5L/min, increases the oxygen level in scavenging solution, makes silicon slice corrosion more even;
(5) silicon chip after step (4) being cleaned carries out pure water overflow rinsing through 5 grooves, 6 grooves and 7 grooves successively, again after wide slow moving water-removal, the temperature of 5 grooves, 6 grooves and 7 groove pure water rinsings is followed successively by 60 DEG C, 60 DEG C and 65 DEG C, the time of cleaning is followed successively by 240s, 240s and 250s, the wide slow moving water-removal time is 50s, finally enters the drying that Drying tunnel completes monocrystalline silicon piece, obtains the silicon chip that surface damage layer thickness reduces, drying temperature is 100 DEG C, and time of drying is 240s.
All carry out ultrasonic above in each rinse bath cleaning process, ultrasonic frequency is 40HZ, and ultrasonic power is 2kw.
Before and after test cleaning, the quality of silicon chip, show that purging method of the present invention accurately controls at about 0.4um the amount of thickness reduction of damaged layer on surface of silicon slice after converting.
Embodiment 4:
Reduce a method for damaged layer on surface of silicon slice thickness, comprise the following steps:
(1) batch of 200 polysilicon chips are put into 1 groove and carry out pure water ultrasonic cleaning, carry out overflow cleaning in cleaning process, cleaning temperature is 30 DEG C, and scavenging period is 320s, the dirty and metal ion with the part removing silicon chip surface;
(2) silicon chip after step (1) being cleaned puts into the solution ultrasonic cleaning that 2 grooves carry out containing clean-out system, and the mass percentage concentration containing clean-out system in the solution of clean-out system in 2 grooves is 6%, and cleaning temperature is 48 DEG C, and scavenging period is 320s;
(3) silicon chip after step (2) being cleaned is put into 3 grooves and is carried out mixing solutions ultrasonic cleaning, mixing solutions in 3 grooves comprises clean-out system, alkali and pure water, the mass percentage concentration of clean-out system is 5%, alkali is potassium hydroxide, and the mass percentage concentration of alkali is 0.3%, and all the other are pure water, cleaning temperature is 50 DEG C, scavenging period is 320s, to remove the dirty as organism, particle etc. of silicon chip surface, obtains the silicon chip that condition of surface is homogeneous;
(4) silicon chip after step (3) being cleaned is placed in 4 grooves and carries out scavenging solution ultrasonic cleaning, 4 groove scavenging solutions comprise clean-out system, alkali and pure water, the mass percentage concentration of clean-out system is 5%, alkali is potassium hydroxide, the mass percentage concentration of alkali is 10%, cleaning temperature is 50 DEG C, and scavenging period is 240s; Corroded damaged layer on surface of silicon slice by this scavenging solution, simultaneously toward supplemental oxygen in cell body solution in Wafer Cleaning process, its consumption is 1L/min, increases the oxygen level in scavenging solution, makes silicon slice corrosion more even;
(5) silicon chip after step (4) being cleaned carries out pure water overflow rinsing through 5 grooves, 6 grooves and 7 grooves successively, again after wide slow moving water-removal, the temperature of 5 grooves, 6 grooves and 7 groove pure water rinsings is followed successively by 45 DEG C, 45 DEG C and 40 DEG C, the time of cleaning is followed successively by 240s, 240s and 250s, the wide slow moving water-removal time is 20s, finally enters the drying that Drying tunnel completes monocrystalline silicon piece, obtains the silicon chip that surface damage layer thickness reduces, drying temperature is 90 DEG C, and time of drying is 320s.
All carry out ultrasonic above in each rinse bath cleaning process, ultrasonic frequency is 40HZ, and ultrasonic power is 2kw.
Before and after test cleaning, the quality of silicon chip, show that purging method of the present invention accurately controls at about 0.35um the reduction of damaged layer on surface of silicon slice thickness after converting.
Comparative example 1
In order to verify beneficial effect of the present invention, the embodiment of the present invention is provided with simultaneous test 1-6, is specially:
The difference of simultaneous test 1 and the embodiment of the present invention 2 purging method is only 4 groove scavenging solutions of simultaneous test 1 to be mass percentage concentration is the potassium hydroxide solution of 5%;
The difference of simultaneous test 2 and the embodiment of the present invention 2 purging method is only 4 groove scavenging solutions of simultaneous test 2 to be mass percentage concentration is the potassium hydroxide solution of 20%;
The difference of simultaneous test 3 and the embodiment of the present invention 2 purging method is only that 4 groove scavenging solutions of simultaneous test 3 are the solution of the clean-out system being 3% containing mass percentage concentration;
The difference of simultaneous test 4 and the embodiment of the present invention 2 purging method is only that 4 groove scavenging solutions of simultaneous test 4 are the solution of the clean-out system being 10% containing mass percentage concentration;
The difference of simultaneous test 5 and the embodiment of the present invention 2 purging method be only 4 groove scavenging solutions of simultaneous test 5 be containing mass percentage concentration be 3% clean-out system and mass percentage concentration be the solution of the potassium hydroxide of 20%;
The difference of simultaneous test 6 and the embodiment of the present invention 2 purging method be only 4 groove scavenging solutions of simultaneous test 6 be containing mass percentage concentration be 3% clean-out system and mass percentage concentration be the solution of the potassium hydroxide of 0.3%.
Table 1 be according to the cleaned silicon chip of the embodiment of the present invention 2 scavenging solution and the cleaned silicon chip of simultaneous test 1-6 scavenging solution Mechanical Crushing force rate comparatively, Mechanical Crushing Force meansurement is supported by silicon chip four points, in the middle of silicon chip, down straightening is broken to silicon chip, in the broken power used instantaneously of silicon chip, we are referred to as Mechanical Crushing power, this power is larger, illustrates that silicon chip performance is better.
As can be seen from Table 1, the Mechanical Crushing power of the silicon chip adopting the embodiment of the present invention 2 purging method to obtain is better and silicon chip outward appearance is qualified, the minimizing thickness of silicon chip affected layer can accurately control at 0.3 μm, illustrate that the purging method of silicon chip provided by the invention decreases the surface damage layer of silicon chip, significantly improve the mechanical property of silicon chip, do not affect the outward appearance of silicon chip simultaneously.The cleaning performance of the independent lower concentration detergent solution of simultaneous test 1-4 or high density detergent solution, separately low-concentration alkali liquor or independent high-concentration alkali liquor does not all have the embodiment of the present invention effective, the washing effect containing high-concentration alkali liquor and clean-out system or the scavenging solution containing low-concentration alkali liquor and clean-out system of simultaneous test 5 and simultaneous test 6 does not have the embodiment of the present invention effective yet, explanation, the scavenging solution that the present invention adopts is compared to the scavenging solution of other kinds, effectively can reduce surface damage layer, silicon chip visual appearance can not be affected simultaneously.
Table 1 according to the cleaned silicon chip of the embodiment of the present invention 2 purging method and the cleaned silicon chip of simultaneous test purging method Mechanical Crushing force rate comparatively
Table 2 compares for the battery efficiency made according to the cleaned silicon chip of the embodiment of the present invention 2 purging method and the cleaned silicon chip of simultaneous test purging method.
The battery efficiency that table 2 is made according to the cleaned silicon chip of the embodiment of the present invention 2 purging method and the cleaned silicon chip of simultaneous test purging method compares
In table 2, Isc is the short-circuit current (A) of battery, Uoc is the open circuit voltage (V) of battery, FF is the packing factor (%) of battery, Eta is the efficiency of conversion (%) of battery, as can be seen from Table 2, the battery conversion efficiency made according to the silicon chip after purging method provided by the invention cleaning is higher.This is because adopt the damaged layer on surface of silicon slice thickness after scavenging solution of the present invention cleaning less, the compound of current carrier at silicon chip surface can be reduced, also can not affect the leather producing process of battery simultaneously, thus improve photoelectric transformation efficiency.
In sum, according to the silicon chip satisfactory mechanical property after purging method cleaning provided by the invention, the battery efficiency that this silicon chip is made is higher.
The above embodiment only have expressed several embodiment of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (10)
1. one kind can be reduced the scavenging solution of damaged layer on surface of silicon slice thickness, it is characterized in that, comprise alkali, clean-out system and water, described alkali is sodium hydroxide or potassium hydroxide, the mass percentage concentration of described alkali in described scavenging solution is 3%-12%, and the mass percentage concentration of described clean-out system in described scavenging solution is 3%-6%.
2. can reduce the scavenging solution of damaged layer on surface of silicon slice thickness as claimed in claim 1, it is characterized in that, the mass percentage concentration of described alkali in described scavenging solution is 3%-8%.
3. can reduce the scavenging solution of damaged layer on surface of silicon slice thickness as claimed in claim 1, it is characterized in that, described clean-out system is the solution comprising sylvite, tensio-active agent, cleaning additive and metal chelating agent.
4. can reduce a purging method for damaged layer on surface of silicon slice thickness, it is characterized in that, comprise the following steps:
(1) silicon chip after cutting is carried out pre-treatment, to remove the impurity of described silicon chip surface;
(2) scavenging solution will be placed in through step (1) pretreated silicon chip, under 40-60 DEG C of condition, clean 200s-500s; Described scavenging solution comprises alkali, clean-out system and water, and described alkali is sodium hydroxide or potassium hydroxide, and the mass percentage concentration of described alkali in described scavenging solution is 3%-12%, and the mass percentage concentration of described clean-out system in described scavenging solution is 3%-6%;
(3) silicon chip after step (2) cleaning carried out washing, obtain the silicon chip that surface damage layer thickness reduces after drying.
5. can reduce the purging method of damaged layer on surface of silicon slice thickness as claimed in claim 4, it is characterized in that, in step (2), the temperature of described cleaning is 48-55 DEG C.
6. can reduce the purging method of damaged layer on surface of silicon slice thickness as claimed in claim 4, it is characterized in that, in step (2), the time of described cleaning is 240s-320s.
7. can reduce the purging method of damaged layer on surface of silicon slice thickness as claimed in claim 4, it is characterized in that, in step (2), in described scavenging solution, pass into one or more in air, oxygen and ozone.
8. can reduce the purging method of damaged layer on surface of silicon slice thickness as claimed in claim 4, it is characterized in that, in step (3), the thickness of the surface damage layer of described silicon chip reduces 0.2-0.4 μm.
9. can reduce the purging method of damaged layer on surface of silicon slice thickness as claimed in claim 4, it is characterized in that, in step (1), described pre-treatment be by described cutting after silicon chip be placed in acid solution cleaning, pure water cleaning and mixing solutions successively and clean, described mixing solutions comprises alkali that mass percentage concentration is 0-0.5% and mass percentage concentration is the clean-out system of 3%-6%.
10. can reduce the purging method of damaged layer on surface of silicon slice thickness as claimed in claim 4, it is characterized in that, in step (1), described pre-treatment be by described cutting after silicon chip be placed in pure water cleaning successively, be that the solution cleaning of 3%-6% clean-out system and mixing solutions clean containing mass percentage concentration, described mixing solutions comprises alkali that mass percentage concentration is 0-0.5% and mass percentage concentration is the clean-out system of 3%-6%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510541614.5A CN105154268A (en) | 2015-08-29 | 2015-08-29 | Cleaning fluid capable of reducing thickness of damaged layer of surface of silicon wafer and cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510541614.5A CN105154268A (en) | 2015-08-29 | 2015-08-29 | Cleaning fluid capable of reducing thickness of damaged layer of surface of silicon wafer and cleaning method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105154268A true CN105154268A (en) | 2015-12-16 |
Family
ID=54795322
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510541614.5A Pending CN105154268A (en) | 2015-08-29 | 2015-08-29 | Cleaning fluid capable of reducing thickness of damaged layer of surface of silicon wafer and cleaning method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105154268A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106733876A (en) * | 2016-12-23 | 2017-05-31 | 苏州阿特斯阳光电力科技有限公司 | A kind of cleaning method of the crystalline silicon of Buddha's warrior attendant wire cutting |
| CN108020537A (en) * | 2018-01-02 | 2018-05-11 | 中国计量大学 | A kind of preparation method of wide area surface enhancing Raman scattering substrate |
| CN109365384A (en) * | 2018-11-19 | 2019-02-22 | 内蒙古中环光伏材料有限公司 | A kind of high-quality silicon wafer cleaning method |
| CN109585272A (en) * | 2018-11-29 | 2019-04-05 | 扬州荣德新能源科技有限公司 | A kind of silicon wafer cleaning method improving photoelectric efficiency |
| CN111613519A (en) * | 2020-03-19 | 2020-09-01 | 江苏高照新能源发展有限公司 | Monocrystalline silicon wafer cleaning method |
| CN112436074A (en) * | 2020-11-30 | 2021-03-02 | 中建材浚鑫科技有限公司 | Texturing and cleaning process suitable for double-sided silicon solar cell |
| CN113578807A (en) * | 2021-07-30 | 2021-11-02 | 湖北亿纬动力有限公司 | Method for cleaning appearance of lithium battery with metal shell |
| CN114292707A (en) * | 2021-12-31 | 2022-04-08 | 浙江奥首材料科技有限公司 | Nano colloidal particle, preparation method, cleaning agent containing nano colloidal particle and cleaning method |
| CN117637443A (en) * | 2023-12-13 | 2024-03-01 | 安徽清电硅业有限公司 | Surface treatment method of silicon wafer |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101022082A (en) * | 2006-12-06 | 2007-08-22 | 上海合晶硅材料有限公司 | Method for controlling thickness of silicon single crystal cutting abrasive disc residual damage layer |
| US20090001315A1 (en) * | 2007-06-06 | 2009-01-01 | Kanto Kagaku Kabushiki Kaisha | Alkaline aqueous solution composition used for washing or etching substrates |
| CN102021658A (en) * | 2010-12-10 | 2011-04-20 | 天津中环领先材料技术有限公司 | Heavily doped monocrystalline silicon wafer corrosion technique by alkali corrosion before acid corrosion |
| CN102477358A (en) * | 2010-11-29 | 2012-05-30 | 江苏协鑫硅材料科技发展有限公司 | Silicon wafer cleaning agent |
| CN102728573A (en) * | 2012-06-19 | 2012-10-17 | 天威新能源控股有限公司 | Process for cleaning damage layer of reactive ion etching (RIE) flocking surface of crystalline silicon |
| CN103021832A (en) * | 2012-12-03 | 2013-04-03 | 天津中环领先材料技术有限公司 | Processing technology of appearance improvement of silicon wafer corroded surface through alkali corrosion |
-
2015
- 2015-08-29 CN CN201510541614.5A patent/CN105154268A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101022082A (en) * | 2006-12-06 | 2007-08-22 | 上海合晶硅材料有限公司 | Method for controlling thickness of silicon single crystal cutting abrasive disc residual damage layer |
| US20090001315A1 (en) * | 2007-06-06 | 2009-01-01 | Kanto Kagaku Kabushiki Kaisha | Alkaline aqueous solution composition used for washing or etching substrates |
| CN102477358A (en) * | 2010-11-29 | 2012-05-30 | 江苏协鑫硅材料科技发展有限公司 | Silicon wafer cleaning agent |
| CN102021658A (en) * | 2010-12-10 | 2011-04-20 | 天津中环领先材料技术有限公司 | Heavily doped monocrystalline silicon wafer corrosion technique by alkali corrosion before acid corrosion |
| CN102728573A (en) * | 2012-06-19 | 2012-10-17 | 天威新能源控股有限公司 | Process for cleaning damage layer of reactive ion etching (RIE) flocking surface of crystalline silicon |
| CN103021832A (en) * | 2012-12-03 | 2013-04-03 | 天津中环领先材料技术有限公司 | Processing technology of appearance improvement of silicon wafer corroded surface through alkali corrosion |
Non-Patent Citations (1)
| Title |
|---|
| 王占国等: "《中国材料工程大典 第11卷 信息功能材料工程 上》", 31 March 2006, 化学工业出版社 * |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106733876A (en) * | 2016-12-23 | 2017-05-31 | 苏州阿特斯阳光电力科技有限公司 | A kind of cleaning method of the crystalline silicon of Buddha's warrior attendant wire cutting |
| CN108020537A (en) * | 2018-01-02 | 2018-05-11 | 中国计量大学 | A kind of preparation method of wide area surface enhancing Raman scattering substrate |
| CN109365384A (en) * | 2018-11-19 | 2019-02-22 | 内蒙古中环光伏材料有限公司 | A kind of high-quality silicon wafer cleaning method |
| CN109585272A (en) * | 2018-11-29 | 2019-04-05 | 扬州荣德新能源科技有限公司 | A kind of silicon wafer cleaning method improving photoelectric efficiency |
| CN111613519A (en) * | 2020-03-19 | 2020-09-01 | 江苏高照新能源发展有限公司 | Monocrystalline silicon wafer cleaning method |
| CN112436074A (en) * | 2020-11-30 | 2021-03-02 | 中建材浚鑫科技有限公司 | Texturing and cleaning process suitable for double-sided silicon solar cell |
| CN113578807A (en) * | 2021-07-30 | 2021-11-02 | 湖北亿纬动力有限公司 | Method for cleaning appearance of lithium battery with metal shell |
| CN114292707A (en) * | 2021-12-31 | 2022-04-08 | 浙江奥首材料科技有限公司 | Nano colloidal particle, preparation method, cleaning agent containing nano colloidal particle and cleaning method |
| CN114292707B (en) * | 2021-12-31 | 2023-09-22 | 浙江奥首材料科技有限公司 | Nano colloid particle, preparation method, cleaning agent containing nano colloid particle and cleaning method |
| CN117637443A (en) * | 2023-12-13 | 2024-03-01 | 安徽清电硅业有限公司 | Surface treatment method of silicon wafer |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105154268A (en) | Cleaning fluid capable of reducing thickness of damaged layer of surface of silicon wafer and cleaning method | |
| CN103464415B (en) | Solar monocrystalline silicon slice cleaning fluid and cleaning method | |
| CN103087850B (en) | A kind of monocrystalline silicon piece prerinse liquid and its cleaning method | |
| CN102832101B (en) | Crystalline silicon cleaning method | |
| CN102294332B (en) | Method for cleaning silicon wafer linearly cut by diamond | |
| CN105039006B (en) | A kind of cleaning agent for solar energy-level silicon wafer and preparation method thereof | |
| CN103614778A (en) | Alcohol-free alkaline texturing solution for mono-crystalline silicon wafer, texturing method for mono-crystalline silicon wafer, solar cell and manufacturing method for solar cell | |
| CN108231540A (en) | A kind of rear cleaning applied to solar cell making herbs into wool | |
| CN105405746B (en) | Cleaning method of gallium antimonide single crystal polished wafer | |
| CN106367815B (en) | The cleaning method of monocrystalline silicon etching device | |
| WO2014101261A1 (en) | Method for producing ultra-clean wiping cloth | |
| CN101817006A (en) | Method for cleaning surface of solar silicon wafer | |
| CN103480598B (en) | Silicon wafer cleaning method for preparing high-efficiency solar cell and cleaning equipment | |
| CN109585272A (en) | A kind of silicon wafer cleaning method improving photoelectric efficiency | |
| CN113793801B (en) | Method for cleaning indium phosphide substrate wafer | |
| CN102254953B (en) | Manufacturing method of N-type solar energy silicon wafer with minority carrier lifetime of more than 1000 microseconds | |
| CN104377119A (en) | Method for cleaning germanium single crystal polished wafer | |
| CN106733876B (en) | A kind of cleaning method of the crystal silicon chip of Buddha's warrior attendant wire cutting | |
| CN107658246A (en) | A kind of solar silicon wafers cleaning | |
| CN103170467B (en) | Ingot casting cycle stock cleaning method | |
| CN102698983A (en) | Cleaning method for solar energy level silicon slice | |
| CN108766869A (en) | A kind of silicon chip of solar cell slot type cleaning method | |
| CN102806216A (en) | Quasi-monocrystalline silicon wafer cleaning method | |
| CN107723802A (en) | A kind of caustic solution of indium phosphide single crystal wafer | |
| CN104028503B (en) | The cleaning method of silicon material |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20151216 |
|
| RJ01 | Rejection of invention patent application after publication |