CN103464418A - Semiconductor silicon chip degumming process - Google Patents
Semiconductor silicon chip degumming process Download PDFInfo
- Publication number
- CN103464418A CN103464418A CN2013104319666A CN201310431966A CN103464418A CN 103464418 A CN103464418 A CN 103464418A CN 2013104319666 A CN2013104319666 A CN 2013104319666A CN 201310431966 A CN201310431966 A CN 201310431966A CN 103464418 A CN103464418 A CN 103464418A
- Authority
- CN
- China
- Prior art keywords
- silicon chip
- warm water
- silicon chips
- water
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 67
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 57
- 239000010703 silicon Substances 0.000 title claims abstract description 57
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 52
- 230000005587 bubbling Effects 0.000 claims abstract description 18
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 16
- 239000004570 mortar (masonry) Substances 0.000 claims abstract description 6
- 239000003292 glue Substances 0.000 claims abstract description 4
- 239000007921 spray Substances 0.000 claims description 10
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 9
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 4
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 4
- 230000010355 oscillation Effects 0.000 claims description 3
- 235000006408 oxalic acid Nutrition 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- 235000015165 citric acid Nutrition 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- 238000007654 immersion Methods 0.000 claims description 2
- 239000004310 lactic acid Substances 0.000 claims description 2
- 235000014655 lactic acid Nutrition 0.000 claims description 2
- 239000004094 surface-active agent Substances 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 9
- 238000005520 cutting process Methods 0.000 abstract description 8
- 238000004140 cleaning Methods 0.000 abstract description 3
- 230000007547 defect Effects 0.000 abstract 2
- 238000002604 ultrasonography Methods 0.000 abstract 2
- 238000002791 soaking Methods 0.000 abstract 1
- 238000005507 spraying Methods 0.000 abstract 1
- 239000008399 tap water Substances 0.000 abstract 1
- 235000020679 tap water Nutrition 0.000 abstract 1
- 230000002950 deficient Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- -1 be soaked 400s Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000009991 scouring Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Abstract
The invention provides a semiconductor silicon chip degumming process, which comprises the following steps that (1) cut monocrystalline silicon rods are reversely placed into a transfer car provided with a special clamp; (2) bubbling pre-cleaning is carried out, i.e. the monocrystalline silicon chips are placed into a groove full of tap water to be pre-cleaned by using a bubbling pipe for removing mortar on the surface of the silicon chips; (3) warm water is used for spraying the silicon chips; (4) the silicon chips are subjected to ultrasound pre-cleaning, i.e. the sprayed monocrystalline silicon chips are placed into ultrasound warm water to be soaked for removing mortar in gaps of the silicon chips; (5) warm water is used for soaking degumming; (6) warm water bubbling is carried out, and the monocrystalline silicon chips are disengaged from bonding strips; (7) warm water chip taking is carried out, i.e. the disengaged monocrystalline silicon chips are placed into the warm water, and residue glue on vertical surfaces of the silicon chips is wiped. The process overcomes the defect of high rejection rate of the semiconductor silicon chips caused by the existing degumming process, the automatic degumming technology after the cutting completion of the semiconductor monocrystalline silicon chips with different thicknesses is realized, and in addition, the surfaces of the silicon chips can be enabled not to generate defects of lace, broken edges, notches and the like.
Description
Technical field
The present invention relates to monocrystalline silicon line cutting field, is to realize after the cutting of different-thickness semiconductor monocrystal silicon chip degumming technology automatically specifically.
Background technology
The semiconductor monocrystal silicon processing technique has obtained develop rapidly in recent years, develop into by initial interior (outward) circle cutting technique the multi-wire saw technology generally adopted at present, the semi-conductor silicon chip thickness that multi-line cutting machine has cut and diameter disunity, usually time changes larger with diameter variations different from thickness with the water temperature of coming unstuck.
Traditional degumming tech is generally manually-operated, technical process is for to be immersed in silicon chip in the hot water storgae more than 40 ℃, soak 50-130min, the rear surface flower sheet but the sheet surface washing totally can not cause coming unstuck, soak insufficient coming unstuck and can cause collapsing limit sliver etc., the employee operates very difficult standard simultaneously, random strong, silicon chip surface and integrality are caused to destruction in various degree, often cause later process sliver, collapse limit, contamination etc.Therefore degumming tech becomes the bottleneck of restriction production capacity and product quality.Therefore a kind of practicality technology of removing photoresist becomes the reduction fraction defective, reduces the semi-conductor silicon chip surface impurity and stains, and improves the key technology of yield.
Patent 102225406A discloses a kind of cleaning method of silicon wafer cut by diamond wire, but its solution is the low problem of pyramid coverage rate, reflectivity and battery efficiency of silicon chip alkali making herbs into wool, what be that this patent will solve with the difference of the art of this patent is that different-thickness, diameter semi-conductor silicon chip have cut rear degumming technology, improve come unstuck efficiency and yield ，Wei Hou road matting basis is provided.
Summary of the invention
The problem to be solved in the present invention is that to overcome the semi-conductor silicon chip fraction defective that existing degumming tech causes high, provides a kind of and realizes after the cutting of different-thickness semiconductor monocrystal silicon chip degumming technology automatically, and can guarantee that silicon chip surface, without the flower sheet, collapses limit, breach etc. bad.
Technical scheme of the present invention is as follows:
A kind of semi-conductor silicon chip degumming tech comprises the following steps:
1) will cut complete silicon single crystal rod is upside down in the transit wagon that particular jig is housed;
2) bubbling prerinse, soon monocrystalline silicon piece is placed in the groove of filling running water and utilizes bubbling pipe to carry out prerinse, to remove the silicon chip surface mortar;
3) use warm water to be sprayed silicon chip;
4) silicon chip is carried out to ultrasonic prerinse, soaked in will being placed on ultrasonic warm water through the monocrystalline silicon piece of spray, to remove the mortar in silicon chip gap;
5) use emerge in worm water to come unstuck;
6) warm water bubbling, will break away between monocrystalline silicon piece and adhesive strip;
7) warm water is got sheet, and the silicon chip that is about to break away from is placed in warm water, wiping silicon chip facade removing residual glue;
Further,
Above-mentioned steps 2) the prerinse condition in is: water temperature 15-25 ℃, bubbling TD 0.6-1.0cm, air pressure 0.3-0.5kp, time 300-500s;
Above-mentioned steps 3) the spray condition in is: spray is used 2-4 shower, reciprocal spray time 300-500s, and oscillation cycle 30-60s, water temperature is controlled between 25-45 ℃, hydraulic pressure 0.1-0.4MPa;
Above-mentioned steps 4) the ultrasonic prerinse condition in is: soak water temperature 30-50 ℃, and time 300-600s, supersonic frequency 25-40KHZ, in water, mixed volume is than the surfactant of 1-2%;
Above-mentioned steps 5) the immersion condition of coming unstuck in is: silicon chip is immersed in the hot water of 65-75 ℃, soaks in water and add 1-2% acid, this acid can be selected from a kind of in lactic acid, oxalic acid, citric acid, soak time 300-600s;
Above-mentioned steps 6) the warm water bubbling condition in is: silicon chip is placed on to warm water 35-50 ℃, soaks 300-500s, 35 ℃ of bubblings;
Above-mentioned steps 7) warm water in is got the sheet condition: water temperature 35-50 ℃.
It is 200um-1500um that above-mentioned semi-conductor silicon chip degumming tech is applicable to thickness, and the silicon chip that diameter is 57.5-200mm comes unstuck it smoothly, and can guarantee that silicon chip surface, without the flower sheet, collapses limit, breach etc. bad.
Advantage and good effect that the present invention has are: owing to adopting technique scheme, overcome the semi-conductor silicon chip fraction defective that existing degumming tech causes high, realized after different-thickness semiconductor monocrystal silicon chip cutting degumming technology automatically, and can guarantee that silicon chip surface, without the flower sheet, collapses limit, breach etc. bad.
The specific embodiment
A kind of semi-conductor silicon chip degumming tech comprises the following steps:
1) use the SIC of NTC442 line cutting machine 1500#, the steel wire of 0.14mm diameter, cut a diameter 150mm, length 270mm, and the monocrystalline of thickness 0.820mm, be upside down in monocrystal rod and material seat in the fixture of four-wheel transport vehicle after having cut.
2) again this monocrystalline silicon piece is placed in the tank of filling running water to 21 ℃ of water temperatures, bubbling pipe diameter 0.6mm, air pressure 0.3kPa, bubbling time 360s.
3) then use 35 ℃ of running water of working pressure 0.2MPa water temperature to be sprayed this monocrystalline, adopt 4 showers, every pipe is installed 4 shower nozzles, back and forth sprays 350s, oscillation cycle 40s.
4) will spray again complete monocrystalline silicon piece and be placed on and there is ultrasonic (supersonic frequency 28KHZ) in advance, in 40 ℃ of warm water, be soaked 400s, mix 1.0% oxalic acid in water.
5) again this silicon chip is immersed in the hot water of 70 ℃, adds 1% citric acid in water, soak time 420s,
6) again this silicon chip is placed in 35 ℃ of warm water and soaks 440s, open bubbling simultaneously and come unstuck silicon chip and bonding guide ribs are broken away from.
7) again this monocrystalline silicon piece and the material seat that separated are placed to 35 ℃ of warm water dollies and got sheet, and use scouring pad wiping silicon chip facade bar glue residual.
Above-mentioned semi-conductor silicon chip degumming tech can make silicon chip come unstuck smoothly, and can guarantee that silicon chip surface, without the flower sheet, collapses limit, breach etc. bad.
The above embodiment to invention has been described in detail, but described content is only preferred embodiment of the present invention, can not be considered to for limiting practical range of the present invention.All equalization variations of doing according to the present patent application scope and improvement etc., within all should still belonging to patent covering scope of the present invention.
Claims (8)
1. a semi-conductor silicon chip degumming tech is characterized in that: comprise the following steps:
1) will cut complete silicon single crystal rod is upside down in the transit wagon that particular jig is housed;
2) bubbling prerinse, soon monocrystalline silicon piece is placed in the groove of filling running water and utilizes bubbling pipe to carry out prerinse, to remove the silicon chip surface mortar;
3) use warm water to be sprayed silicon chip;
4) silicon chip is carried out to ultrasonic prerinse, soaked in will being placed on ultrasonic warm water through the monocrystalline silicon piece of spray, to remove the mortar in silicon chip gap;
5) use emerge in worm water to come unstuck;
6) warm water bubbling, will break away between monocrystalline silicon piece and adhesive strip;
7) warm water is got sheet, and the silicon chip that is about to break away from is placed in warm water, wiping silicon chip facade removing residual glue.
2. a kind of semi-conductor silicon chip degumming tech according to claim 1, it is characterized in that: the prerinse condition described step 2) is: water temperature 15-25 ℃, bubbling TD 0.6-1.0cm, air pressure 0.3-0.5kp, time 300-500s.
3. a kind of semi-conductor silicon chip degumming tech according to claim 1, it is characterized in that: the spray condition in described step 3) is: spray is used 2-4 shower, reciprocal spray time 300-500s, oscillation cycle 30-60s, water temperature is controlled between 25-45 ℃, hydraulic pressure 0.1-0.4MPa.
4. a kind of semi-conductor silicon chip degumming tech according to claim 1, it is characterized in that: the ultrasonic prerinse condition in described step 4) is: soak water temperature 30-50 ℃, time 300-600s, supersonic frequency 25-40KHZ, in water, mixed volume is than the surfactant of 1-2%.
5. a kind of semi-conductor silicon chip degumming tech according to claim 1, it is characterized in that: the immersion condition of coming unstuck in described step 5) is: silicon chip is immersed in the hot water of 65-75 ℃, soak in water and add 1-2% acid, this acid can be selected from a kind of in lactic acid, oxalic acid, citric acid, soak time 300-600s.
6. a kind of semi-conductor silicon chip degumming tech according to claim 1, it is characterized in that: the warm water bubbling condition in described step 6) is: silicon chip is placed on to warm water 35-50 ℃, soaks 300-500s, 35 ℃ of bubblings.
7. a kind of semi-conductor silicon chip degumming tech according to claim 1, it is characterized in that: the warm water in described step 7) is got the sheet condition and is: water temperature 35-50 ℃.
8. to be applicable to thickness be 200um-1500um to a kind of semi-conductor silicon chip degumming tech claimed in claim 1, the silicon chip that diameter is 57.5-200mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310431966.6A CN103464418B (en) | 2013-09-18 | 2013-09-18 | A kind of semi-conductor silicon chip degumming tech |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310431966.6A CN103464418B (en) | 2013-09-18 | 2013-09-18 | A kind of semi-conductor silicon chip degumming tech |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103464418A true CN103464418A (en) | 2013-12-25 |
| CN103464418B CN103464418B (en) | 2015-10-07 |
Family
ID=49789586
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310431966.6A Active CN103464418B (en) | 2013-09-18 | 2013-09-18 | A kind of semi-conductor silicon chip degumming tech |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103464418B (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104668231A (en) * | 2015-02-13 | 2015-06-03 | 江西赛维Ldk太阳能高科技有限公司 | Degumming method for pallet for linear cutting and pallet degumming solution |
| CN105855213A (en) * | 2016-03-31 | 2016-08-17 | 苏州晶樱光电科技有限公司 | Silicon wafer degumming process |
| CN106409972A (en) * | 2016-09-27 | 2017-02-15 | 张家港市港威超声电子有限公司 | Degumming tool for silicon wafer after multi-wire cutting |
| CN106816497A (en) * | 2017-02-22 | 2017-06-09 | 邢台晶龙电子材料有限公司 | A kind of silicon wafer stripping cleaning method and device |
| CN107473331A (en) * | 2017-08-17 | 2017-12-15 | 隆基绿能科技股份有限公司 | Concentrated water treatment method and silicon wafer stripping method |
| CN108372149A (en) * | 2018-03-10 | 2018-08-07 | 中锗科技有限公司 | A kind of Degumming method of wire cutting solar energy germanium wafer |
| CN108711547A (en) * | 2018-05-03 | 2018-10-26 | 浙江海顺新能源有限公司 | A kind of silicon wafer stripping technique |
| CN109979799A (en) * | 2017-12-27 | 2019-07-05 | 东莞新科技术研究开发有限公司 | The Degumming method of semiconductor wafer |
| CN111921945A (en) * | 2020-07-14 | 2020-11-13 | 海盐得胜化工设备有限公司 | Cleaning process for polycrystalline silicon structured packing |
| CN114247682A (en) * | 2021-11-25 | 2022-03-29 | 安徽微芯长江半导体材料有限公司 | Special post-cutting cleaning device and cleaning method for silicon carbide wafer |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002009033A (en) * | 2000-06-19 | 2002-01-11 | Super Silicon Kenkyusho:Kk | Washing device for semiconductor wafer |
| US20030110803A1 (en) * | 2001-09-04 | 2003-06-19 | Nippon Sheet Glass Co., Ltd. | Method of manufacturing glass substrate for magnetic disks, and glass substrate for magnetic disks |
| CN101590476A (en) * | 2009-06-10 | 2009-12-02 | 嘉兴五神光电材料有限公司 | A kind of cleaning method of monocrystalline silicon piece |
| WO2009158378A2 (en) * | 2008-06-25 | 2009-12-30 | Applied Materials, Inc. | Dual chamber megasonic cleaner |
| CN101817006A (en) * | 2010-03-22 | 2010-09-01 | 浙江矽盛电子有限公司 | Method for cleaning surface of solar silicon wafer |
| CN201820777U (en) * | 2010-09-02 | 2011-05-04 | 董维来 | Automatic solar silicon wafer separator by wet process |
| CN102489463A (en) * | 2011-12-29 | 2012-06-13 | 北京泰拓精密清洗设备有限公司 | Modularization cleaning system |
| CN102698989A (en) * | 2012-06-11 | 2012-10-03 | 协鑫阿特斯（苏州）光伏科技有限公司 | Method for precleaning silicon wafer |
| CN102723403A (en) * | 2012-06-25 | 2012-10-10 | 江苏协鑫硅材料科技发展有限公司 | Seed crystal degumming process |
| CN102909187A (en) * | 2011-08-01 | 2013-02-06 | 苏州东泰太阳能科技有限公司 | Cleaning machine |
-
2013
- 2013-09-18 CN CN201310431966.6A patent/CN103464418B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002009033A (en) * | 2000-06-19 | 2002-01-11 | Super Silicon Kenkyusho:Kk | Washing device for semiconductor wafer |
| US20030110803A1 (en) * | 2001-09-04 | 2003-06-19 | Nippon Sheet Glass Co., Ltd. | Method of manufacturing glass substrate for magnetic disks, and glass substrate for magnetic disks |
| WO2009158378A2 (en) * | 2008-06-25 | 2009-12-30 | Applied Materials, Inc. | Dual chamber megasonic cleaner |
| CN101590476A (en) * | 2009-06-10 | 2009-12-02 | 嘉兴五神光电材料有限公司 | A kind of cleaning method of monocrystalline silicon piece |
| CN101817006A (en) * | 2010-03-22 | 2010-09-01 | 浙江矽盛电子有限公司 | Method for cleaning surface of solar silicon wafer |
| CN201820777U (en) * | 2010-09-02 | 2011-05-04 | 董维来 | Automatic solar silicon wafer separator by wet process |
| CN102909187A (en) * | 2011-08-01 | 2013-02-06 | 苏州东泰太阳能科技有限公司 | Cleaning machine |
| CN102489463A (en) * | 2011-12-29 | 2012-06-13 | 北京泰拓精密清洗设备有限公司 | Modularization cleaning system |
| CN102698989A (en) * | 2012-06-11 | 2012-10-03 | 协鑫阿特斯（苏州）光伏科技有限公司 | Method for precleaning silicon wafer |
| CN102723403A (en) * | 2012-06-25 | 2012-10-10 | 江苏协鑫硅材料科技发展有限公司 | Seed crystal degumming process |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104668231A (en) * | 2015-02-13 | 2015-06-03 | 江西赛维Ldk太阳能高科技有限公司 | Degumming method for pallet for linear cutting and pallet degumming solution |
| CN105855213A (en) * | 2016-03-31 | 2016-08-17 | 苏州晶樱光电科技有限公司 | Silicon wafer degumming process |
| CN106409972A (en) * | 2016-09-27 | 2017-02-15 | 张家港市港威超声电子有限公司 | Degumming tool for silicon wafer after multi-wire cutting |
| CN106816497A (en) * | 2017-02-22 | 2017-06-09 | 邢台晶龙电子材料有限公司 | A kind of silicon wafer stripping cleaning method and device |
| CN107473331A (en) * | 2017-08-17 | 2017-12-15 | 隆基绿能科技股份有限公司 | Concentrated water treatment method and silicon wafer stripping method |
| CN107473331B (en) * | 2017-08-17 | 2021-03-09 | 隆基绿能科技股份有限公司 | Concentrated water treatment method and silicon wafer degumming method |
| CN109979799A (en) * | 2017-12-27 | 2019-07-05 | 东莞新科技术研究开发有限公司 | The Degumming method of semiconductor wafer |
| CN108372149A (en) * | 2018-03-10 | 2018-08-07 | 中锗科技有限公司 | A kind of Degumming method of wire cutting solar energy germanium wafer |
| CN108711547A (en) * | 2018-05-03 | 2018-10-26 | 浙江海顺新能源有限公司 | A kind of silicon wafer stripping technique |
| CN108711547B (en) * | 2018-05-03 | 2020-09-29 | 浙江海顺新能源有限公司 | Silicon wafer degumming process |
| CN111921945A (en) * | 2020-07-14 | 2020-11-13 | 海盐得胜化工设备有限公司 | Cleaning process for polycrystalline silicon structured packing |
| CN114247682A (en) * | 2021-11-25 | 2022-03-29 | 安徽微芯长江半导体材料有限公司 | Special post-cutting cleaning device and cleaning method for silicon carbide wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103464418B (en) | 2015-10-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103464418B (en) | A kind of semi-conductor silicon chip degumming tech | |
| CN101700520B (en) | Washing method of monocrystalline/polycrystalline silicon chips | |
| CN101817006A (en) | Method for cleaning surface of solar silicon wafer | |
| CN102962226A (en) | Method for cleaning polished sapphire substrate wafer | |
| KR20100093098A (en) | Texturing and cleaning agent for the surface treatment of wafers and use thereof | |
| CN105903694A (en) | Cleaning method and back-side defect reworking method for large-size sapphire substrate before annealing | |
| CN105144350A (en) | Method for polishing silicon wafer and method for producing epitaxial wafer | |
| CN101130229A (en) | Double-side polishing method for gallium phosphide wafer | |
| WO2021132133A1 (en) | Semiconductor chip cleaning method and semiconductor chip cleaning device | |
| CN106816497A (en) | A kind of silicon wafer stripping cleaning method and device | |
| CN102723403B (en) | Seed crystal degumming process | |
| US20180114691A1 (en) | Methods for etching as-cut silicon wafers and producing solar cells | |
| CN104831358B (en) | A kind of cleaning method of liquid phase epitaxy Gd-Ga garnet crystal substrate | |
| CN102698989A (en) | Method for precleaning silicon wafer | |
| CN109979799A (en) | The Degumming method of semiconductor wafer | |
| CN104028503B (en) | The cleaning method of silicon material | |
| JP7452428B2 (en) | Manufacturing method of infrared absorbing glass | |
| CN201880705U (en) | Cleaning device for silicon chip | |
| CN106423999B (en) | A kind of cleaning process after Sapphire Substrate slice lapping | |
| CN202018950U (en) | Pre-cleaning equipment for silicon chips | |
| CN114247682A (en) | Special post-cutting cleaning device and cleaning method for silicon carbide wafer | |
| CN209571393U (en) | Acid corrosion removes the jig of silicon wafer surface damage | |
| CN102941627B (en) | Application method of micropore flat plate and preparation method of micropore glass | |
| JP4637034B2 (en) | Manufacturing method of cleaned silicon wafer | |
| CN110446345A (en) | A kind of resin ground method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20181224 Address after: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Park (outside the ring) Hai Tai Road 12 Patentee before: TIANJIN HUANOU SEMICONDUCTOR MATERIAL TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191224 Address after: 214200 Dongfen Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Co-patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Patentee after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 300384 in Tianjin Binhai high tech Zone Huayuan Industrial Zone (outer ring) Haitai Road No. 12 Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| CP03 | Change of name, title or address |
Address after: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Guo jiahuodiqu after: Zhong Guo Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Guo jiahuodiqu before: Zhong Guo Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
|
| CP03 | Change of name, title or address |