CN108711547B - Silicon wafer degumming process - Google Patents
Silicon wafer degumming process Download PDFInfo
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- CN108711547B CN108711547B CN201810413824.XA CN201810413824A CN108711547B CN 108711547 B CN108711547 B CN 108711547B CN 201810413824 A CN201810413824 A CN 201810413824A CN 108711547 B CN108711547 B CN 108711547B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
Abstract
The invention discloses a silicon wafer degumming process, which comprises the following steps: placing a silicon wafer in a treatment tank, adding deionized water into the treatment tank, adding a degumming solution into the treatment tank again, standing the silicon wafer for 35-50min, carrying out spray-washing treatment, controlling the temperature of spray-washing water to be 30-35 ℃, placing the treated silicon wafer in the treatment tank again, adding the degumming solution into the treatment tank, vibrating the silicon wafer at 50-60 ℃, carrying out ultrasonic cleaning on the silicon wafer after the silicon wafer reacts for 3-6min, placing the vibrated silicon wafer in an ultrasonic cleaner for soaking, placing the silicon wafer in a surface treatment tank again, adding a surface treatment solution into the surface treatment tank, soaking for 30-50min at 35-45 ℃, and carrying out spray-washing treatment again. The invention can comprehensively clean the residual glue of the silicon chip, thereby ensuring the degumming quality and ensuring that the surface of the silicon chip is not damaged.
Description
Technical Field
The invention relates to the technical field of silicon wafer treatment, in particular to a silicon wafer degumming process.
Background
With the continuous development of world economy, the demand of modern construction for high-efficiency energy is continuously increased. Photovoltaic power generation is increasingly paid attention to and vigorously developed by countries in the world as one of green energy and main energy for human sustainable development. Monocrystalline silicon wafers and polycrystalline silicon wafers are used as basic materials of solar cells for photovoltaic power generation, and have wide market demands.
The silicon wafer cleaning process is the last process for producing the silicon wafer, two cleaning devices are mainly used in the process, one is a solar silicon wafer degumming machine, and the function of the solar silicon wafer degumming machine is mainly to pre-clean and degum the silicon wafer subjected to multi-line cutting; the other type is a solar silicon wafer cleaning machine which is mainly used for carrying out ultrasonic cleaning and drying treatment on the degummed and separated silicon wafers by using heated deionized water and a medicament. The silicon wafer is in the degumming machine, the silicon wafer is required to be sprayed and rinsed for many times, the used water is tap water or reclaimed water, certain requirements are imposed on the water temperature, and if the water temperature is too low, the problem of side edge breakage of the silicon wafer viscose is easily caused after the silicon wafer is sprayed, so that serious loss is caused. Therefore, we propose a silicon wafer degumming process.
Disclosure of Invention
The invention provides a silicon wafer degumming process to solve the problems in the background technology.
The invention provides a silicon wafer degumming process, which comprises the following steps:
s1: quickly placing the cut silicon wafer into a treatment tank filled with distilled water, and cleaning the surface of the silicon wafer at 30-40 ℃, wherein the silicon wafer needs to be cleaned for 3-6 times, so that impurities on the surface of the silicon wafer can be removed;
s2: taking out the silicon wafer treated in the step S1, drying the surface of the silicon wafer, putting the silicon wafer into the treatment tank again, adding deionized water into the treatment tank, wherein the deionized water needs to permeate the silicon wafer, adding degumming liquid into the treatment tank again, mixing and stirring the deionized water at 45-55 ℃, and standing the silicon wafer for 35-50min after the deionized water and the degumming liquid are uniformly mixed;
s3: after standing, placing the silicon wafer under a spraying mechanism for spray washing treatment, wherein the water pressure is 0.6-0.7MPa, the spray washing time is 350-380s, and the temperature of spray washing water is controlled at 30-35 ℃ to remove mortar and most residual glue in gaps of the silicon wafer;
s4: placing the silicon wafer treated in the step S3 in a treatment tank again, adding degumming liquid into the treatment tank, wherein the degumming liquid needs to be spread over the silicon wafer, vibrating the silicon wafer at 50-60 ℃ to ensure that the degumming liquid is fully contacted with the surface of the silicon wafer, carrying out ultrasonic cleaning on the silicon wafer after the degumming liquid reacts for 3-6min, placing the vibrated silicon wafer in an ultrasonic cleaner for soaking for 10-15min, and removing residual glue on the surface of the silicon wafer by using wiping cloth after the cleaning is finished;
s5: and after the treatment is finished, placing the silicon wafer into the surface treatment tank again, adding the surface treatment liquid into the surface treatment tank, soaking the silicon wafer in an environment with the temperature of 35-45 ℃ for 30-50min, performing spray washing treatment again under the water pressure of 0.1-0.4MPa, and then placing the silicon wafer into a sterile environment for air drying, thus finishing the degumming treatment on the surface of the silicon wafer.
Preferably, the surface treatment liquid in S1 is a mixture of ethanol, citric acid, nitric acid, isopropyl alcohol, a pH adjuster, and a dispersant, and the weight ratio of ethanol, citric acid, nitric acid, isopropyl alcohol, the pH adjuster, and the dispersant is 2: 1: 0.1: 0.5: 0.05: 0.01.
preferably, the molar mass ratio of the deionized water to the degumming liquid in S2 is 10: 1.
the invention also provides a degumming solution which comprises the following raw materials in parts by weight: 10-20 parts of organic acid, 5-8 parts of oxalic acid, 5-8 parts of halogenated alkane, 2-5 parts of acetone, 2-5 parts of ethylene glycol, 0.3-0.6 part of surfactant, 0.1-0.2 part of corrosion inhibitor and 0.1-0.2 part of defoaming agent.
The invention also provides a preparation process of the degumming solution, which comprises the following specific steps:
selecting a stirrer, putting organic acid, oxalic acid, halogenated alkane, acetone and ethylene glycol into the stirrer, mixing and stirring at 35-50 ℃, adding a surfactant, a corrosion inhibitor and a defoaming agent into the mixture again after stirring for 15-18min, standing for 10-16min, mixing and stirring again for 5-8min, taking out the mixture after the stirring is finished, and obtaining a degumming solution after the temperature of the mixture is restored to normal temperature.
The silicon wafer degumming process provided by the invention has the beneficial effects that: according to the silicon wafer degumming process, the silicon wafer is pretreated, so that impurities on the surface of the silicon wafer can be removed, the surface of the silicon wafer is treated twice by using degumming liquid, and the concentrations of the degumming liquid are different, so that the residual glue of the silicon wafer can be comprehensively cleaned, the degumming quality is ensured, the surface of the silicon wafer can be prevented from being damaged, and the silicon wafer degumming process is suitable for large-scale popularization.
Detailed Description
The invention is further illustrated by the following examples.
Example 1
The invention provides a silicon wafer degumming process, which comprises the following steps:
s1: quickly placing the cut silicon wafer into a treatment tank filled with distilled water, and cleaning the surface of the silicon wafer at 30 ℃, wherein the silicon wafer needs to be cleaned for 3-6 times, so that impurities on the surface of the silicon wafer can be removed;
s2: taking out the silicon wafer treated in the step S1, drying the surface of the silicon wafer, placing the silicon wafer into the treatment tank again, adding deionized water into the treatment tank, wherein the deionized water needs to permeate the silicon wafer, then adding degumming liquid into the treatment tank again, mixing and stirring the deionized water at 45 ℃, and standing the silicon wafer for 35min after the deionized water and the degumming liquid are uniformly mixed;
s3: after standing, placing the silicon wafer under a spraying mechanism for spray-washing treatment, wherein the water pressure is 0.6-0.7MPa, the spray-washing time is 350, and the temperature of spray-washing water is controlled at 30-35 ℃ to remove mortar and most residual glue in gaps of the silicon wafer;
s4: placing the silicon wafer treated in the step S3 in a treatment tank again, adding degumming liquid into the treatment tank, wherein the degumming liquid needs to be spread over the silicon wafer, vibrating the silicon wafer at 50 ℃ to enable the degumming liquid to be fully contacted with the surface of the silicon wafer, carrying out ultrasonic cleaning on the silicon wafer after the degumming liquid reacts for 3min, placing the vibrated silicon wafer in an ultrasonic cleaner for soaking, wherein the cleaning time is 10min, and removing residual glue on the surface of the silicon wafer by using wiping cloth after the cleaning is finished;
s5: and after the treatment is finished, placing the silicon wafer into the surface treatment tank again, adding the surface treatment liquid into the surface treatment tank, soaking the silicon wafer in an environment with the temperature of 35 ℃ for 30min, performing spray-washing treatment again under the water pressure of 0.1-0.4MPa, and then placing the silicon wafer into an aseptic environment for air-drying, thus finishing the degumming treatment on the surface of the silicon wafer.
The surface treatment liquid in S1 is a mixture of ethanol, citric acid, nitric acid, isopropyl alcohol, a pH adjuster, and a dispersant, and the weight ratio of ethanol, citric acid, nitric acid, isopropyl alcohol, the pH adjuster, and the dispersant is 2: 1: 0.1: 0.5: 0.05: 0.01.
the molar mass ratio of the deionized water to the degumming liquid in S2 is 10: 1.
the invention also provides a degumming solution which comprises the following raw materials in parts by weight: 10 parts of organic acid, 5 parts of oxalic acid, 5 parts of halogenated alkane, 2 parts of acetone, 2 parts of ethylene glycol, 0.3 part of surfactant, 0.1 part of corrosion inhibitor and 0.1 part of defoaming agent.
The invention also provides a preparation process of the degumming solution, which comprises the following specific steps:
selecting a stirrer, putting organic acid, oxalic acid, halogenated alkane, acetone and ethylene glycol into the stirrer, mixing and stirring at 35 ℃, adding a surfactant, a corrosion inhibitor and a defoaming agent into the stirrer again after stirring for 15min, standing for 10min, mixing and stirring again for 5min, taking out the mixture after the completion, and obtaining a degumming solution after the temperature is restored to normal temperature.
Example 2
The invention provides a silicon wafer degumming process, which comprises the following steps:
s1: quickly placing the cut silicon wafer into a treatment tank filled with distilled water, and cleaning the surface of the silicon wafer at 33 ℃, wherein the silicon wafer needs to be cleaned for 3-6 times, so that impurities on the surface of the silicon wafer can be removed;
s2: taking out the silicon wafer treated in the step S1, drying the surface of the silicon wafer, placing the silicon wafer into the treatment tank again, adding deionized water into the treatment tank, wherein the deionized water needs to permeate the silicon wafer, then adding degumming liquid into the treatment tank again, mixing and stirring the deionized water at 48 ℃, and standing the silicon wafer for 40min after the deionized water and the degumming liquid are uniformly mixed;
s3: after standing, placing the silicon wafer under a spraying mechanism for spray-washing treatment, wherein the water pressure is 0.6-0.7MPa, the spray-washing time is 360s, and the temperature of spray-washing water is controlled at 32 ℃ to remove mortar and most residual glue in gaps of the silicon wafer;
s4: placing the silicon wafer treated in the step S3 in a treatment tank again, adding a degumming solution into the treatment tank, wherein the degumming solution needs to be spread over the silicon wafer, vibrating the silicon wafer at 53 ℃ to ensure that the degumming solution is fully contacted with the surface of the silicon wafer, carrying out ultrasonic cleaning on the silicon wafer after the reaction of the degumming solution and the surface of the silicon wafer for 4min, placing the vibrated silicon wafer in an ultrasonic cleaner for soaking for 12min, and removing residual glue on the surface of the silicon wafer by using wiping cloth after the cleaning is finished;
s5: and after the treatment is finished, placing the silicon wafer into the surface treatment tank again, adding the surface treatment liquid into the surface treatment tank, soaking the silicon wafer in an environment with the temperature of 35-45 ℃ for 35min, performing spray washing treatment again under the water pressure of 0.1-0.4MPa, and then placing the silicon wafer into an aseptic environment for air drying to finish the degumming treatment on the surface of the silicon wafer.
The surface treatment liquid in S1 is a mixture of ethanol, citric acid, nitric acid, isopropyl alcohol, a pH adjuster, and a dispersant, and the weight ratio of ethanol, citric acid, nitric acid, isopropyl alcohol, the pH adjuster, and the dispersant is 2: 1: 0.1: 0.5: 0.05: 0.01.
the molar mass ratio of the deionized water to the degumming liquid in S2 is 10: 1.
the invention also provides a degumming solution which comprises the following raw materials in parts by weight: 13 parts of organic acid, 6 parts of oxalic acid, 6 parts of halogenated alkane, 3 parts of acetone, 3 parts of ethylene glycol, 0.4 part of surfactant, 0.13 part of corrosion inhibitor and 0.13 part of defoaming agent.
The invention also provides a preparation process of the degumming solution, which comprises the following specific steps:
selecting a stirrer, putting organic acid, oxalic acid, halogenated alkane, acetone and ethylene glycol into the stirrer, mixing and stirring at 40 ℃, adding a surfactant, a corrosion inhibitor and a defoaming agent into the stirrer again after stirring for 16min, standing for 12min, mixing and stirring again for 6min, taking out the mixture after the completion, and obtaining a degumming solution after the temperature is restored to normal temperature.
Example 3
The invention provides a silicon wafer degumming process, which comprises the following steps:
s1: quickly placing the cut silicon wafer into a treatment tank filled with distilled water, and cleaning the surface of the silicon wafer at 37 ℃, wherein the silicon wafer needs to be cleaned for 3-6 times, so that impurities on the surface of the silicon wafer can be removed;
s2: taking out the silicon wafer treated in the step S1, drying the surface of the silicon wafer, placing the silicon wafer into the treatment tank again, adding deionized water into the treatment tank, wherein the deionized water needs to permeate the silicon wafer, then adding degumming liquid into the treatment tank again, mixing and stirring the deionized water at 52 ℃, and standing the silicon wafer for 45min after the deionized water and the degumming liquid are uniformly mixed;
s3: after standing, placing the silicon wafer under a spraying mechanism, and carrying out spraying treatment under the water pressure of 0.6-0.7MPa, wherein the spraying time is 370s, and the temperature of spraying water is controlled at 34 ℃ to remove mortar and most residual glue in gaps of the silicon wafer;
s4: placing the silicon wafer treated in the step S3 in a treatment tank again, adding a degumming solution into the treatment tank, wherein the degumming solution needs to be spread over the silicon wafer, vibrating the silicon wafer at 57 ℃ to ensure that the degumming solution is fully contacted with the surface of the silicon wafer, carrying out ultrasonic cleaning on the silicon wafer after the reaction of the degumming solution and the surface of the silicon wafer is carried out for 5min, placing the vibrated silicon wafer in an ultrasonic cleaner for soaking for 14min, and removing residual glue on the surface of the silicon wafer by using wiping cloth after the cleaning is finished;
s5: and after the treatment is finished, placing the silicon wafer into the surface treatment tank again, adding the surface treatment liquid into the surface treatment tank, soaking the silicon wafer in an environment with the temperature of 41 ℃ for 42min, performing spray-washing treatment again under the water pressure of 0.1-0.4MPa, and then placing the silicon wafer into an aseptic environment for air-drying, thus finishing the degumming treatment on the surface of the silicon wafer.
The surface treatment liquid in S1 is a mixture of ethanol, citric acid, nitric acid, isopropyl alcohol, a pH adjuster, and a dispersant, and the weight ratio of ethanol, citric acid, nitric acid, isopropyl alcohol, the pH adjuster, and the dispersant is 2: 1: 0.1: 0.5: 0.05: 0.01.
the molar mass ratio of the deionized water to the degumming liquid in S2 is 10: 1.
the invention also provides a degumming solution which comprises the following raw materials in parts by weight: 17 parts of organic acid, 7 parts of oxalic acid, 7 parts of halogenated alkane, 4 parts of acetone, 4 parts of ethylene glycol, 0.5 part of surfactant, 0.17 part of corrosion inhibitor and 0.17 part of defoaming agent.
The invention also provides a preparation process of the degumming solution, which comprises the following specific steps:
selecting a stirrer, putting organic acid, oxalic acid, halogenated alkane, acetone and ethylene glycol into the stirrer, mixing and stirring at 45 ℃, adding a surfactant, a corrosion inhibitor and a defoaming agent into the stirrer again after stirring for 17min, standing for 14min, mixing and stirring again for 7min, taking out the mixture after the completion, and obtaining a degumming solution after the temperature is restored to normal temperature.
Example 4
The invention provides a silicon wafer degumming process, which comprises the following steps:
s1: quickly placing the cut silicon wafer into a treatment tank filled with distilled water, and cleaning the surface of the silicon wafer at 40 ℃, wherein the silicon wafer needs to be cleaned for 3-6 times, so that impurities on the surface of the silicon wafer can be removed;
s2: taking out the silicon wafer treated in the step S1, drying the surface of the silicon wafer, placing the silicon wafer into the treatment tank again, adding deionized water into the treatment tank, wherein the deionized water needs to permeate the silicon wafer, then adding degumming liquid into the treatment tank again, mixing and stirring the deionized water at 55 ℃, and standing the silicon wafer for 50min after the deionized water and the degumming liquid are uniformly mixed;
s3: after standing, placing the silicon wafer under a spraying mechanism for spray-washing treatment, wherein the water pressure is 0.6-0.7MPa, the spray-washing time is 380s, and the temperature of spray-washing water is controlled at 35 ℃ to remove mortar and most residual glue in gaps of the silicon wafer;
s4: placing the silicon wafer treated in the step S3 in a treatment tank again, adding a degumming solution into the treatment tank, wherein the degumming solution needs to be spread over the silicon wafer, vibrating the silicon wafer at 60 ℃ to enable the degumming solution to be fully contacted with the surface of the silicon wafer, carrying out ultrasonic cleaning on the silicon wafer after the degumming solution reacts for 6min, placing the vibrated silicon wafer in an ultrasonic cleaner for soaking, wherein the cleaning time is 15min, and removing residual glue on the surface of the silicon wafer by using wiping cloth after the cleaning is finished;
s5: and after the treatment is finished, placing the silicon wafer into the surface treatment tank again, adding the surface treatment liquid into the surface treatment tank, soaking the silicon wafer in an environment with the temperature of 35-45 ℃ for 50min, performing spray washing treatment again under the water pressure of 0.1-0.4MPa, and then placing the silicon wafer into a sterile environment for air drying, thus finishing the degumming treatment on the surface of the silicon wafer.
The surface treatment liquid in S1 is a mixture of ethanol, citric acid, nitric acid, isopropyl alcohol, a pH adjuster, and a dispersant, and the weight ratio of ethanol, citric acid, nitric acid, isopropyl alcohol, the pH adjuster, and the dispersant is 2: 1: 0.1: 0.5: 0.05: 0.01.
the molar mass ratio of the deionized water to the degumming liquid in S2 is 10: 1.
the invention also provides a degumming solution which comprises the following raw materials in parts by weight: 20 parts of organic acid, 8 parts of oxalic acid, 8 parts of halogenated alkane, 5 parts of acetone, 5 parts of ethylene glycol, 0.6 part of surfactant, 0.2 part of corrosion inhibitor and 0.2 part of defoaming agent.
The invention also provides a preparation process of the degumming solution, which comprises the following specific steps:
selecting a stirrer, putting organic acid, oxalic acid, halogenated alkane, acetone and ethylene glycol into the stirrer, mixing and stirring at 50 ℃, adding a surfactant, a corrosion inhibitor and a defoaming agent into the stirrer again after stirring for 18min, standing for 16min, mixing and stirring again for 8min, taking out the stirred mixture after the stirring is finished, and obtaining a degumming solution after the temperature of the stirred mixture is restored to normal temperature.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.
Claims (1)
1. The silicon wafer degumming process is characterized by comprising the following steps of:
s1: quickly placing the cut silicon wafer into a treatment tank filled with distilled water, and cleaning the surface of the silicon wafer at 30-40 ℃, wherein the silicon wafer needs to be cleaned for 3-6 times, so that impurities on the surface of the silicon wafer can be removed;
s2: taking out the silicon wafer treated in the step S1, drying the surface of the silicon wafer, putting the silicon wafer into the treatment tank again, adding deionized water into the treatment tank, wherein the deionized water needs to permeate the silicon wafer, adding degumming liquid into the treatment tank again, mixing and stirring the deionized water at 45-55 ℃, and standing the silicon wafer for 35-50min after the deionized water and the degumming liquid are uniformly mixed;
s3: after standing, placing the silicon wafer under a spraying mechanism for spray washing treatment, wherein the water pressure is 0.6-0.7MPa, the spray washing time is 350-380s, and the temperature of spray washing water is controlled at 30-35 ℃ to remove mortar and most residual glue in gaps of the silicon wafer;
s4: placing the silicon wafer treated in the step S3 in a treatment tank again, adding degumming liquid into the treatment tank, wherein the degumming liquid needs to be spread over the silicon wafer, vibrating the silicon wafer at 50-60 ℃ to ensure that the degumming liquid is fully contacted with the surface of the silicon wafer, carrying out ultrasonic cleaning on the silicon wafer after the degumming liquid reacts for 3-6min, placing the vibrated silicon wafer in an ultrasonic cleaner for soaking for 10-15min, and removing residual glue on the surface of the silicon wafer by using wiping cloth after the cleaning is finished;
s5: after the treatment is finished, placing the silicon wafer into the surface treatment pool again, adding the surface treatment liquid into the surface treatment pool, soaking the silicon wafer in an environment with the temperature of 35-45 ℃ for 30-50min, performing spray washing treatment again under the water pressure of 0.1-0.4MPa, and then placing the silicon wafer into an aseptic environment for air drying, namely finishing the degumming treatment on the surface of the silicon wafer;
the surface treatment liquid is a mixed material of ethanol, citric acid, nitric acid, isopropanol, a pH regulator and a dispersing agent, and the weight ratio of the ethanol to the citric acid to the nitric acid to the isopropanol to the pH regulator to the dispersing agent is 2: 1: 0.1: 0.5: 0.05: 0.01;
the molar mass ratio of the deionized water to the degumming liquid in S2 is 10: 1;
the degumming liquid comprises the following raw materials in parts by weight: 10-20 parts of organic acid, 5-8 parts of oxalic acid, 5-8 parts of halogenated alkane, 2-5 parts of acetone, 2-5 parts of ethylene glycol, 0.3-0.6 part of surfactant, 0.1-0.2 part of corrosion inhibitor and 0.1-0.2 part of defoaming agent;
the preparation process of the degumming solution comprises the following specific steps:
selecting a stirrer, putting organic acid, oxalic acid, halogenated alkane, acetone and ethylene glycol into the stirrer, mixing and stirring at 35-50 ℃, adding a surfactant, a corrosion inhibitor and a defoaming agent into the mixture again after stirring for 15-18min, standing for 10-16min, mixing and stirring again for 5-8min, taking out the mixture after the stirring is finished, and obtaining a degumming solution after the temperature of the mixture is restored to normal temperature.
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| CN112745991B (en) * | 2019-10-31 | 2022-05-20 | 洛阳阿特斯光伏科技有限公司 | Degumming agent and preparation method and application thereof |
| CN112934829A (en) * | 2019-11-26 | 2021-06-11 | 东莞新科技术研究开发有限公司 | Cleaning method of semiconductor clamp |
| CN111014161A (en) * | 2019-12-09 | 2020-04-17 | 东莞市日和自动化设备有限公司 | Tray degumming and arranging process |
| CN112126534A (en) * | 2020-09-01 | 2020-12-25 | 武汉宜田科技发展有限公司 | Neutral degumming agent for diamond wire cutting single/polycrystalline silicon rod |
| CN112188657A (en) * | 2020-09-23 | 2021-01-05 | 江西复萍科技有限公司 | Elastic heating cloth and preparation method thereof |
| CN112191570B (en) * | 2020-10-14 | 2022-04-22 | 苏州欧梦达电子有限公司 | Degumming and paint removing process for fingerprint module |
| CN114887990A (en) * | 2022-05-13 | 2022-08-12 | 安徽光智科技有限公司 | Ultrasonic cleaning process for cemented lens |
| CN115216370A (en) * | 2022-07-07 | 2022-10-21 | 呼和浩特市欧通能源科技有限公司 | Degumming liquid for removing adhesive in silicon crystal clamping piece and using method thereof |
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| CN106653560A (en) * | 2015-10-30 | 2017-05-10 | 东莞新科技术研究开发有限公司 | Silicon wafer cleaning method |
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