CN111842330A - Monocrystalline silicon wafer cleaning device and technology - Google Patents
Monocrystalline silicon wafer cleaning device and technology Download PDFInfo
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- CN111842330A CN111842330A CN202010755906.XA CN202010755906A CN111842330A CN 111842330 A CN111842330 A CN 111842330A CN 202010755906 A CN202010755906 A CN 202010755906A CN 111842330 A CN111842330 A CN 111842330A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
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- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention belongs to the technical field of single crystal cleaning, in particular to a single crystal silicon wafer cleaning device and a single crystal silicon wafer cleaning process, which comprise ten cleaning tanks which are continuously arranged and a filter basket for placing single crystal silicon wafers; the ten cleaning tanks are a first soaking tank, a second ultrasonic overflow tank, a third ultrasonic cleaning tank, a fourth ultrasonic cleaning tank, a fifth ultrasonic overflow tank, a sixth organic cleaning tank, a seventh overflow cleaning tank, an eighth overflow cleaning tank, a ninth overflow cleaning tank and a tenth pulling tank in sequence, cleaning liquid in the ninth overflow cleaning tank overflows to the eighth overflow cleaning tank, and cleaning liquid in the eighth overflow cleaning tank overflows to the seventh overflow cleaning tank; the filter basket is sequentially put in and taken out from the first soaking tank, the second ultrasonic overflow tank, the third ultrasonic cleaning tank, the fourth ultrasonic cleaning tank, the fifth ultrasonic overflow tank, the sixth organic cleaning tank, the seventh overflow cleaning tank, the eighth overflow cleaning tank, the ninth overflow cleaning tank and the tenth lifting tank. The method specially reduces the dirty generation rate of the single crystal silicon powder in the actual production process.
Description
Technical Field
The invention relates to the technical field of single crystal cleaning, in particular to a device and a process for cleaning a single crystal silicon wafer.
Background
The productivity of the monocrystalline silicon piece is rapidly developed, and the original polycrystalline proportion productivity is rapidly extruded; the original polycrystal cleaning process can not adapt to the cleaning of single crystals, the requirement on the single crystals is higher, the process is more complex, and the process is adapted to the diversified development of various varieties at present.
Disclosure of Invention
The invention aims to solve the problem that the original polycrystalline cleaning process in the prior art cannot be adapted to single crystal cleaning, and provides a single crystal silicon wafer cleaning device and a single crystal silicon wafer cleaning process.
In order to achieve the purpose, the invention adopts the following technical scheme:
a monocrystalline silicon piece cleaning device comprises ten cleaning tanks which are continuously arranged and a filtering basket for placing monocrystalline silicon pieces; the ten cleaning tanks are a first soaking tank, a second ultrasonic overflow tank, a third ultrasonic cleaning tank, a fourth ultrasonic cleaning tank, a fifth ultrasonic overflow tank, a sixth organic cleaning tank, a seventh overflow cleaning tank, an eighth overflow cleaning tank, a ninth overflow cleaning tank and a tenth lifting tank in sequence, wherein the ninth overflow cleaning tank is higher than the eighth overflow cleaning tank, the eighth overflow cleaning tank is higher than the seventh overflow cleaning tank, cleaning liquid in the ninth overflow cleaning tank overflows to the eighth overflow cleaning tank, and cleaning liquid in the eighth overflow cleaning tank overflows to the seventh overflow cleaning tank; the filter basket is sequentially placed in and taken out from the first soaking tank, the second ultrasonic overflow tank, the third ultrasonic cleaning tank, the fourth ultrasonic cleaning tank, the fifth ultrasonic overflow tank, the sixth organic cleaning tank, the seventh overflow cleaning tank, the eighth overflow cleaning tank, the ninth overflow cleaning tank and the tenth lifting tank.
As a further preferable scheme, the first soaking tank is filled with a diluted cleaning agent, the second ultrasonic overflow tank is filled with pure water, the third ultrasonic cleaning tank and the fourth ultrasonic cleaning tank are filled with diluted cleaning agents, the fifth ultrasonic overflow tank is filled with pure water, the sixth organic cleaning tank is filled with a dilution of hydrogen peroxide and alkali, the seventh overflow cleaning tank, the eighth overflow cleaning tank and the ninth overflow cleaning tank are filled with pure water, and the tenth drawing tank is filled with high-temperature water.
A monocrystalline silicon wafer cleaning process comprises the following steps:
step 1: adding a cleaning agent with the volume fraction of 2% into the first soaking tank, adding purified water into the second ultrasonic overflow tank, the fifth ultrasonic overflow tank, the seventh overflow cleaning tank, the eighth overflow cleaning tank, the ninth overflow cleaning tank and the tenth pulling tank, adding a mixed solution of hydrogen peroxide solution and alkali into the sixth organic cleaning tank, adding an alkali cleaning mixed solution into the third ultrasonic cleaning tank and the fourth ultrasonic cleaning tank, placing the monocrystalline silicon wafer into the filtering basket, and soaking the monocrystalline silicon wafer and the filtering basket into the cleaning agent in the first soaking tank;
step 2, taking out the filter basket, immersing the filter basket into a second ultrasonic overflow groove, and performing ultrasonic overflow cleaning to remove residual silicon powder on the silicon wafer, wherein the overflow speed is more than 200L/Hour;
step 6, overflowing the filter basket processed by the sixth organic cleaning tank at 45-60 ℃ in a seventh overflowing cleaning tank, an eighth overflowing cleaning tank and a ninth overflowing cleaning tank in sequence, wherein the overflowing speed is more than 200L/Hour; stopping overflowing after all the foam on the liquid level surface is taken away;
step 7, immersing the filter basket passing through the ninth overflow cleaning tank into a tenth drawing tank, and before immersing, ensuring that the water temperature in the tenth drawing tank reaches 90-95 ℃, slowly drawing, and evaporating a part of hot water on the surface of the silicon wafer;
wherein, the soaking time in each of the steps 1 to 7 is 160 to 180 seconds.
As a further preferable scheme, the alkali washing mixed solution in the step 1 is a mixed solution prepared from solid alkali, a surfactant and pure water, the volume fraction of the mixed solution is 3-5%, the calculation object is formed by mixing the solid alkali and the surfactant as a mixed solute, and the hydrogen peroxide solution is formed by mixing 280-300L of hydrogen peroxide and pure water, the volume fraction of which is 7-10%.
Has the advantages that:
compared with the prior art, the monocrystalline silicon wafer cleaning process has the following advantages:
in the actual production process, the invention specially reduces the pollution generation rate of the single crystal silicon powder, the hydrogen peroxide is directly added, the reaction is violent, the acid washing process can be slowed down by adding a small amount of alkali, and meanwhile, a part of silicon powder can be reacted again, so that the pressure of a medicine washing tank is reduced.
Drawings
FIG. 1 is a schematic view of the overall structure of the present invention;
in the figure: 1. the device comprises a first soaking tank, a second ultrasonic overflow tank, a third ultrasonic cleaning tank, a fourth ultrasonic cleaning tank, a fifth ultrasonic overflow tank, a sixth organic cleaning tank, a seventh overflow cleaning tank, a sixth overflow cleaning tank, a ninth overflow cleaning tank, a tenth lifting tank, a 11 and a wafer box.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
A monocrystalline silicon piece cleaning device comprises ten cleaning tanks which are continuously arranged and filter baskets for placing monocrystalline silicon pieces, wherein the filter baskets are placed in the cleaning tanks for cleaning and soaking, and the filter baskets are grabbed by a mechanical arm for selective placement and taking out;
the ten cleaning tanks are a first soaking tank 1, a second ultrasonic overflow tank 2, a third ultrasonic cleaning tank 3, a fourth ultrasonic cleaning tank 4, a fifth ultrasonic overflow tank 5, a sixth organic cleaning tank 6, a seventh overflow cleaning tank 7, an eighth overflow cleaning tank 8, a ninth overflow cleaning tank 9 and a tenth pulling tank 10 in sequence, wherein the ninth overflow cleaning tank 9 is higher than the eighth overflow cleaning tank 8, the eighth overflow cleaning tank 8 is higher than the seventh overflow cleaning tank 7, cleaning liquid in the ninth overflow cleaning tank 9 overflows to the eighth overflow cleaning tank 8, and cleaning liquid in the eighth overflow cleaning tank 8 overflows to the seventh overflow cleaning tank 7; the filter basket is sequentially put in and taken out from a first soaking tank 1, a second ultrasonic overflow tank 2, a third ultrasonic cleaning tank 3, a fourth ultrasonic cleaning tank 4, a fifth ultrasonic overflow tank 5, a sixth organic cleaning tank 6, a seventh overflow cleaning tank 7, an eighth overflow cleaning tank 8, a ninth overflow cleaning tank 9 and a tenth drawing tank 10.
The first soaking tank 1 is internally provided with a diluted cleaning agent, the second ultrasonic overflow tank 2 is internally provided with pure water, the third ultrasonic cleaning tank 3 and the fourth ultrasonic cleaning tank 4 are both provided with diluted cleaning agents, the fifth ultrasonic overflow tank 5 is internally provided with pure water, the sixth organic cleaning tank 6 is internally provided with a diluent of hydrogen peroxide and alkali, the seventh overflow cleaning tank 7, the eighth overflow cleaning tank 8 and the ninth overflow cleaning tank 9 are all provided with pure water, the temperature is 50-60 ℃, the tenth drawing tank 10 is internally provided with high-temperature pure water, and the temperature is 80-90 ℃.
A process for cleaning a monocrystalline silicon wafer comprises the following steps:
step 1: adding a cleaning agent with the volume fraction of 2% into the first soaking tank 1, adding purified water into the second ultrasonic overflow tank 2, the fifth ultrasonic overflow tank 5, the seventh overflow cleaning tank 7, the eighth overflow cleaning tank 8, the ninth overflow cleaning tank 9 and the tenth pulling tank 10, adding a mixed solution of hydrogen peroxide solution and alkali into the sixth organic cleaning tank 6, adding an alkali cleaning mixed solution into the third ultrasonic cleaning tank 3 and the fourth ultrasonic cleaning tank 4, placing the single crystal silicon wafer into the filtering basket, and soaking the single crystal silicon wafer and the filtering basket into the cleaning agent;
step 2, taking out the filter basket, immersing the filter basket into a second ultrasonic overflow groove 2, and performing ultrasonic overflow cleaning to remove residual silicon powder on the silicon wafer, wherein the overflow speed is more than 200L/Hour;
step 6, overflowing the filter basket processed by the sixth organic cleaning tank 6 at 45-60 ℃ in a seventh overflow cleaning tank 7, an eighth overflow cleaning tank 8 and a ninth overflow cleaning tank 9 in sequence, wherein the overflow speed is more than 200L/Hour; stopping overflowing after all the foam on the liquid level surface is taken away;
step 7, immersing the filter basket passing through the ninth overflow cleaning tank 9 into a tenth drawing tank 10, and before immersing, ensuring that the water temperature in the tenth drawing tank 10 reaches 90-95 ℃, slowly drawing, and evaporating a part of hot water on the surface of the silicon wafer;
wherein, the soaking time in each of the steps 1 to 7 is 160 to 180 seconds.
Further, the alkali washing mixed solution in the step 1 is a mixed solution prepared from solid alkali, a surfactant and pure water, the volume fraction of the mixed solution is 3-5%, the calculation object uses the solid alkali and the surfactant as a mixed solute, and the hydrogen peroxide solution is prepared by mixing 280-300L of hydrogen peroxide and pure water, the volume fraction of which is 7% -10%.
Furthermore, cleaning fluid is injected into the wafer box 11 for placing the silicon wafers, the seventh overflow cleaning tank 7 is communicated with the wafer box 11, and the cleaning fluid overflowing from the seventh overflow cleaning tank 7 directly enters the wafer box 11 for secondary use, so that the cost is saved.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.
Claims (4)
1. A monocrystalline silicon piece belt cleaning device which characterized in that: comprises ten cleaning tanks which are continuously arranged and a filtering basket used for placing monocrystalline silicon wafers; the ten cleaning tanks are a first soaking tank (1), a second ultrasonic overflow tank (2), a third ultrasonic cleaning tank (3), a fourth ultrasonic cleaning tank (4), a fifth ultrasonic overflow tank (5), a sixth organic cleaning tank (6), a seventh overflow cleaning tank (7), an eighth overflow cleaning tank (8), a ninth overflow cleaning tank (9) and a tenth lifting tank (10) in sequence, wherein the ninth overflow cleaning tank (9) is higher than the eighth overflow cleaning tank (8), the eighth overflow cleaning tank (8) is higher than the seventh overflow cleaning tank (7), cleaning solution in the ninth overflow cleaning tank (9) overflows to the eighth overflow cleaning tank (8), and cleaning solution in the eighth overflow cleaning tank (8) overflows to the seventh overflow cleaning tank (7); the filter basket is sequentially placed in and taken out from a first soaking tank (1), a second ultrasonic overflow tank (2), a third ultrasonic cleaning tank (3), a fourth ultrasonic cleaning tank (4), a fifth ultrasonic overflow tank (5), a sixth organic cleaning tank (6), a seventh overflow cleaning tank (7), an eighth overflow cleaning tank (8), a ninth overflow cleaning tank (9) and a tenth lifting tank (10).
2. The cleaning apparatus for the single crystal silicon wafer according to claim 1, wherein: the cleaning agent is diluted in the first soaking tank (1), pure water is filled in the second ultrasonic overflow tank (2), the cleaning agent is diluted in the third ultrasonic cleaning tank (3) and the fourth ultrasonic cleaning tank (4), the pure water is filled in the fifth ultrasonic overflow tank (5), a diluent of hydrogen peroxide and alkali is filled in the sixth organic cleaning tank (6), the pure water is filled in the seventh overflow cleaning tank (7), the eighth overflow cleaning tank (8) and the ninth overflow cleaning tank (9), and high-temperature water is filled in the tenth lifting tank (10).
3. A process for cleaning a single crystal silicon wafer according to any one of the preceding claims 1 or 2, comprising the steps of:
step 1: adding a cleaning agent with the volume fraction of 2% into the first soaking tank (1), adding purified water into the second ultrasonic overflow tank (2), the fifth ultrasonic overflow tank (5), the seventh overflow cleaning tank (7), the eighth overflow cleaning tank (8), the ninth overflow cleaning tank (9) and the tenth pulling tank (10), adding a mixed solution of a hydrogen peroxide solution and alkali into the sixth organic cleaning tank (6), adding an alkali cleaning mixed solution into the third ultrasonic cleaning tank (3) and the fourth ultrasonic cleaning tank (4), placing the monocrystalline silicon wafer into the filtering basket, and soaking the monocrystalline silicon wafer and the filtering basket into the cleaning agent in the first soaking tank (1) for soaking;
step 2, taking out the filter basket, immersing the filter basket into a second ultrasonic overflow groove (2) for ultrasonic overflow cleaning, and removing residual silicon powder on the silicon wafer, wherein the overflow speed is more than 200L/Hour;
step 3, sequentially immersing the filter basket into a third ultrasonic cleaning tank (3) and a fourth ultrasonic cleaning tank (4) for cleaning until no obvious silicon powder residue exists on the surface, wherein the cleaning temperature is 50-60 ℃;
step 4, immersing the filter basket cleaned by the fourth ultrasonic cleaning tank (4) into a fifth ultrasonic overflow tank (5) for primary overflow rinsing at the temperature of 50-60 ℃, wherein the overflow speed is more than 200L/Hour, and stopping overflow after all foams on the liquid level surface are taken away;
step 5, immersing the filter blue passing through the fifth ultrasonic overflow tank (5) into a sixth organic cleaning tank (6) for soaking at the temperature of 45-55 ℃;
step 6, overflowing the filter basket processed by the sixth organic cleaning tank (6) at 45-60 ℃ in a seventh overflowing cleaning tank (7), an eighth overflowing cleaning tank (8) and a ninth overflowing cleaning tank (9) in sequence, wherein the overflowing speed is more than 200L/Hour; stopping overflowing after all the foam on the liquid level surface is taken away;
step 7, immersing the filter basket passing through the ninth overflow cleaning tank (9) into a tenth drawing tank (10), ensuring that the water temperature in the tenth drawing tank (10) reaches 90-95 ℃ before immersion, slowly drawing, and evaporating a part of hot water on the surface of the silicon wafer;
step 8, taking the silicon wafer out of the filter basket, and drying at 80-100 ℃;
step 9, taking out the dried silicon wafer and naturally cooling the silicon wafer;
wherein, the soaking time in each of the steps 1 to 7 is 160 to 180 seconds.
4. The monocrystalline silicon wafer cleaning process according to claim 3, wherein the alkali cleaning mixed solution in the step 1 is a mixed solution prepared from solid alkali, a surfactant and pure water, the volume fraction of the mixed solution is 3-5%, the calculation object is formed by mixing the solid alkali and the surfactant as a mixed solute, and the hydrogen peroxide solution is formed by mixing 280-300L of hydrogen peroxide and pure water, the volume fraction of the hydrogen peroxide solution is 7-10%.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010755906.XA CN111842330A (en) | 2020-07-31 | 2020-07-31 | Monocrystalline silicon wafer cleaning device and technology |
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| CN202010755906.XA CN111842330A (en) | 2020-07-31 | 2020-07-31 | Monocrystalline silicon wafer cleaning device and technology |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112209383A (en) * | 2020-11-11 | 2021-01-12 | 江苏鑫华半导体材料科技有限公司 | Electronic grade polysilicon cleaning system and method |
| CN112916501A (en) * | 2021-02-01 | 2021-06-08 | 深圳正和捷思科技有限公司 | Efficient optical filter cleaning process |
| CN114632759A (en) * | 2022-02-24 | 2022-06-17 | 江苏美科太阳能科技股份有限公司 | Efficiency-improving cleaning method for large-size monocrystalline silicon wafer |
| CN114871186A (en) * | 2022-01-19 | 2022-08-09 | 上海晶盟硅材料有限公司 | Pretreatment method for epitaxial wafer resistance measurement |
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| WO1993001615A1 (en) * | 1991-07-02 | 1993-01-21 | Tadahiro Ohmi | Silicon wafer and its cleaning method |
| CN203508507U (en) * | 2013-09-23 | 2014-04-02 | 陕西天宏硅材料有限责任公司 | Cleaning device of monocrystalline silicon pieces |
| CN109365384A (en) * | 2018-11-19 | 2019-02-22 | 内蒙古中环光伏材料有限公司 | A kind of high-quality silicon wafer cleaning method |
| CN110665893A (en) * | 2019-09-30 | 2020-01-10 | 内蒙古中环光伏材料有限公司 | Method for cleaning oversized monocrystalline silicon wafer |
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2020
- 2020-07-31 CN CN202010755906.XA patent/CN111842330A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1993001615A1 (en) * | 1991-07-02 | 1993-01-21 | Tadahiro Ohmi | Silicon wafer and its cleaning method |
| CN203508507U (en) * | 2013-09-23 | 2014-04-02 | 陕西天宏硅材料有限责任公司 | Cleaning device of monocrystalline silicon pieces |
| CN109365384A (en) * | 2018-11-19 | 2019-02-22 | 内蒙古中环光伏材料有限公司 | A kind of high-quality silicon wafer cleaning method |
| CN110665893A (en) * | 2019-09-30 | 2020-01-10 | 内蒙古中环光伏材料有限公司 | Method for cleaning oversized monocrystalline silicon wafer |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112209383A (en) * | 2020-11-11 | 2021-01-12 | 江苏鑫华半导体材料科技有限公司 | Electronic grade polysilicon cleaning system and method |
| CN112916501A (en) * | 2021-02-01 | 2021-06-08 | 深圳正和捷思科技有限公司 | Efficient optical filter cleaning process |
| CN114871186A (en) * | 2022-01-19 | 2022-08-09 | 上海晶盟硅材料有限公司 | Pretreatment method for epitaxial wafer resistance measurement |
| CN114632759A (en) * | 2022-02-24 | 2022-06-17 | 江苏美科太阳能科技股份有限公司 | Efficiency-improving cleaning method for large-size monocrystalline silicon wafer |
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Address after: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Applicant after: Jiangsu Meike Solar Energy Technology Co.,Ltd. Address before: No. 968, GANGLONG Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Applicant before: JIANGSU GAOZHAO NEW ENERGY DEVELOPMENT Co.,Ltd. |
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Address after: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Applicant after: Jiangsu Meike Solar Energy Technology Co.,Ltd. Address before: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Applicant before: Jiangsu Meike Solar Energy Technology Co.,Ltd. |
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Application publication date: 20201030 |