CN201611648U - Wet etching equipment - Google Patents
Wet etching equipment Download PDFInfo
- Publication number
- CN201611648U CN201611648U CN2009202134255U CN200920213425U CN201611648U CN 201611648 U CN201611648 U CN 201611648U CN 2009202134255 U CN2009202134255 U CN 2009202134255U CN 200920213425 U CN200920213425 U CN 200920213425U CN 201611648 U CN201611648 U CN 201611648U
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- descaling bath
- water
- wet etching
- deionized water
- heater
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Abstract
The utility model discloses wet etching equipment comprising a descaling bath, a hot potcher, a heating device and a water supply device, wherein the descaling bath is used for loading hot phosphoric acid which is used for conducting chemical stripping on the silicon nitride on the surface of wafers; a water inlet of the heating device and the water supply device are connected with each other through a pipe; a water outlet of the heating device and the hot potcher are connected with each other through a pipe; the water supply device is used for supplying deionized water with normal temperature; the deionized water with normal temperature flowing out from the water supply device flows into the heating device for heating through the pipe between the water inlet of the heating device and the water supply device; the heated deionized water flows into the hot potcher through the pipe between the water outlet of the heating device and the hot potcher; and the water outlet of the heating device is also connected with a water valve which is connected with the descaling bath. The wet etching equipment can effectively remove the phosphoric acid left on the inner wall of the descaling bath, and prevent the impurities in the left phosphoric acid from causing wafer defects, thus being capable of reducing the defect ratio of the wafers.
Description
Technical field
The utility model relates to semiconductor integrated circuit manufacturing technology field, particularly wet etching equipment.
Background technology
Initial from semiconductor manufacturing industry, wet etching just links together with the wafer manufacturing.Replaced by dry etching though at present wet etching is most of, wet etching float silicon nitride (silica), remove residue, peel off on the top layer and large scale figure corrosion applications aspect still play an important role.Compare with dry etching, the benefit of wet etching is that subsurface material is had high selection ratio, can not bring plasma damage to device, and equipment is simple.
Because the high selectivity characteristic of wet etching, wet chemistry is peeled off and is used to remove the surface layer material that comprises photoresist and masking layer etc. sometimes.Shallow trench isolation in the wafer manufacture process in the manufacturing process of (STI), self-aligned contact structure etc., silicon nitride (Si
3N
4) be widely used as the masking layer material.This layer silicon nitride masking layer carries out wet etching with hot phosphoric acid and realizes chemical stripping.
Fig. 1 shows the structural representation of the wet etching equipment that is used to realize the silicon nitride chemical stripping.Wet etching equipment comprises solution tank and drying devices 106 such as first descaling bath 101, second descaling bath 102, hot rinsing cell, SC1 rinse bath 104, cold potcher 105, and the arrow between the different assemblies is represented the route that transports of wafer to be processed.
Wherein, hold hot phosphoric acid in first descaling bath 101 and second descaling bath 102, the temperature of hot phosphoric acid remains on about 160 degrees centigrade, is used for silicon nitride is carried out chemical stripping.What hold in the hot rinsing cell 103 is hot deionized water, and temperature generally about 65 degree, is used for the wafer after the pickling is carried out rinsing.Described deionized water is to come from the deionized water at normal temperature that water supply installation 108 provides, and deionized water injects hot rinsing cell after heater 107 is heated to 65 degrees centigrade.Wafer after the rinsing is placed in the SC1 rinse bath 104.Hold No. 1 standard cleaning liquid (SC1) of industrial standard wet clean process (RCA cleaning) in the SC1 rinse bath 104, No. 1 standard cleaning liquid is the mixed solution of ammonium hydroxide, hydrogen peroxide and deionized water, is used to remove wafer and shows particle and the organic substance that adheres to.Wafer is placed into cold potcher 105 more then.What hold in the cold potcher 105 is the deionized water of normal temperature, is used for wafer is carried out rinsing.At last, wafer is admitted to drying device 106 so that remove residual water on the wafer, makes drying wafer.Dry back wafer has just been finished wet corrosion technique, is admitted to the subsequent technique flow process and further handles.
After wet etching equipment operation a period of time, the impurity in each solution tank can get more and more, and therefore need clean each solution tank.Wherein the cleaning to first descaling bath 101, second descaling bath 102 all is to realize by the deionized water that water supply installation 108 provides.A delivery port of water supply installation 109 connects water valve 109 by pipeline, connects the pipeline that from water valve 109 then and connects first descaling bath 101 and second descaling bath 102 respectively.When wet etching equipment is in running order, holding hot phosphoric acid in first descaling bath 101 and second descaling bath 102, this moment, water valve 109 cut out.When needs clean wet etching equipment, at first with the phosphoric acid emptying in first descaling bath 101 and second descaling bath 102, open water valve 109 then, the deionized water at normal temperature that water supply installation 108 is provided flows in first descaling bath 101 and second descaling bath 102 by pipeline, realization is to these two flushings that the descaling bath inwall carries out, the impurity that adheres on the inwall is dissolved in the deionized water, deionized water emptying from first descaling bath 101 and second descaling bath 102 more then.
Find that in actual production the residual phosphoric acid of adhering on the inwall of first descaling bath 101 and second descaling bath is difficult to rinse well.And be doped with impurity in these residual phosphoric acid; When coming into operation after wet etching equipment cleans, these impurity might cause the ratio of defects of wafer to rise attached on the wafer.
The utility model content
In view of this, the purpose of this utility model is, proposes a kind of wet etching equipment, can realize effectively removing the phosphoric acid of the descaling bath inwall remnants that hold phosphoric acid in the wet etching equipment, reduces the ratio of defects of wafer.
A kind of wet etching equipment that the utility model embodiment proposes comprises descaling bath, hot rinsing cell, heater and water supply installation; Described descaling bath is used to hold hot phosphoric acid, and described hot phosphoric acid is used for the silicon nitride of crystal column surface is carried out chemical stripping;
Connect by pipeline between the water inlet of heater and the water supply installation, be connected by pipeline between the delivery port of heater and the hot rinsing cell, water supply installation is used to provide the deionized water of normal temperature, water inlet and pipeline water supply installation between of the deionized water at normal temperature that flows out from water supply installation by heater heats after flowing into heater, and the deionized water after the heating flows into hot rinsing cell by the delivery port and the pipeline between the hot rinsing cell of heater;
The delivery port of described heater also connects a water valve, and described water valve is connected with described descaling bath.
The number of described descaling bath is more than or equal to one.
Hot phosphoric acid in descaling bath after the emptying, is opened described water valve from descaling bath, the deionized water after the heating flows to descaling bath by the delivery port of heater.
The temperature of the deionized water after the described heating that flows to descaling bath is 30 degrees centigrade to 80 degrees centigrade.
Preferably, the temperature of the deionized water after the described heating that flows to descaling bath is 40 degrees centigrade to 70 degrees centigrade.
As can be seen from the above technical solutions, this scheme has been utilized the heater that the deionized water of heating is provided to hot rinsing cell, deionized water with this heater heating cleans descaling bath, can effectively remove the residual phosphoric acid of descaling bath inwall, prevent that the impurity in the residual phosphoric acid from causing wafer defect, therefore can reduce the ratio of defects of wafer.
Description of drawings
Fig. 1 is the composition structural representation of the wet etching equipment of prior art;
Fig. 2 is the composition structural representation of the wet etching equipment of the utility model embodiment;
Fig. 3 is the concern chart of Measuring Time point with the wafer defect number, wherein, all be to adopt deionized water at normal temperature that first descaling bath and second descaling bath are cleaned before 21 days July in 2008, the deionized water after then adopting heating after 21 days July in 2008 cleans first descaling bath and second descaling bath.
Embodiment
For making the purpose of this utility model, technical scheme and advantage clearer, the utility model is described in further detail below in conjunction with accompanying drawing.
Fig. 2 shows the composition structural representation of the wet etching equipment of the utility model embodiment.Wet etching equipment comprises solution tank and drying devices 206 such as first descaling bath 201, second descaling bath 202, hot rinsing cell, SC1 rinse bath 204, cold potcher 205, and the arrow between the different assemblies is represented the route that transports of wafer to be processed.In addition, wet etching equipment also comprises heater 207, water supply installation 208 and water valve 209.Connect by pipeline between the water inlet of heater 207 and the water supply installation 208, also be connected between the delivery port of heater 207 and the hot rinsing cell 203 by pipeline.The delivery port of heater 207 also connects water valve 209, and water valve 209 connects first descaling bath 201 and second descaling bath 202. respectively by pipeline
When wet etching equipment is in running order, holding hot phosphoric acid in first descaling bath 201 and second descaling bath 202, this moment, water valve 209 cut out.The deionized water that water supply installation 208 provides is through heater 207 heating, and the deionized water after the heating flows into hot rinsing cell 203.When needs clean wet etching equipment, at first with the phosphoric acid emptying in first descaling bath 201 and second descaling bath 202, open water valve 209 then, after the deionized water that water supply installation 208 is provided is heated by heater 207, flow in first descaling bath 201 and second descaling bath 202 by pipeline again, realization is to these two flushings that the descaling bath inwall carries out, the impurity that adheres on the inwall is dissolved in the deionized water, deionized water emptying from first descaling bath 201 and second descaling bath 202 more then.
According to wet etching equipment shown in Figure 2, use the deionized water after heating that first descaling bath 201 and second descaling bath 202 are cleaned, can be higher than the cleaning efficiency of deionized water at normal temperature, and it is more thorough to clean ground.When being used for first descaling bath 201 and 202 cleanings of second descaling bath, the temperature that heater 207 adds hot deionized water can be 30 degrees centigrade to 80 degrees centigrade, preferably, can be 40 degrees centigrade to 70 degrees centigrade.
Among the above embodiment, wet etching equipment comprises two descaling baths: first descaling bath 201 and second descaling bath 302.In fact, wet etching equipment also can include only a descaling bath or more than two descaling bath.
Can prove the beneficial effects of the utility model by the contrast experiment.After wet etching equipment was cleaned, the defective number of the wafer after wet etching handled carried out sampled measurements, has so just obtained the chart shown in Fig. 3.Wherein abscissa is represented the time point of sampled measurements, and ordinate is represented the number of defective.All be to adopt deionized water at normal temperature that first descaling bath and second descaling bath are cleaned before 21 days July in 2008, the deionized water after then adopting heating after 21 days July in 2008 cleans first descaling bath and second descaling bath.Can find out significantly from Fig. 3 that the defective number that on July 21st, 2008 measured later on is significantly less than the defective number that this day measured in the past.This proof adopts washed with de-ionized water first descaling bath and second descaling bath after the heating, can know the phosphoric acid that the descaling bath inwall is residual comparatively up hill and dale really, prevents that impurity is residual.
The above only is preferred embodiment of the present utility model; not in order to restriction the utility model; all any modifications of within spirit of the present utility model and principle, being done, be equal to and replace and improvement etc., all should be included within the protection range of the present utility model.
Claims (5)
1. a wet etching equipment comprises descaling bath, hot rinsing cell, heater and water supply installation; Described descaling bath is used to hold hot phosphoric acid, and described hot phosphoric acid is used for the silicon nitride of crystal column surface is carried out chemical stripping;
Connect by pipeline between the water inlet of heater and the water supply installation, be connected by pipeline between the delivery port of heater and the hot rinsing cell, water supply installation is used to provide the deionized water of normal temperature, water inlet and pipeline water supply installation between of the deionized water at normal temperature that flows out from water supply installation by heater heats after flowing into heater, and the deionized water after the heating flows into hot rinsing cell by the delivery port and the pipeline between the hot rinsing cell of heater;
It is characterized in that the delivery port of described heater also connects a water valve, described water valve is connected with described descaling bath.
2. wet etching equipment according to claim 1 is characterized in that the number of described descaling bath is more than or equal to one.
3. wet etching equipment according to claim 1 is characterized in that, the hot phosphoric acid in descaling bath after the emptying, is opened described water valve from descaling bath, and the deionized water after the heating flows to descaling bath by the delivery port of heater.
4. according to the described wet etching equipment of claim 3, it is characterized in that the temperature of the deionized water after the described heating that flows to descaling bath is 30 degrees centigrade to 80 degrees centigrade.
5. wet etching equipment according to claim 4 is characterized in that, the temperature of the deionized water after the described heating that flows to descaling bath is 40 degrees centigrade to 70 degrees centigrade.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009202134255U CN201611648U (en) | 2009-12-15 | 2009-12-15 | Wet etching equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009202134255U CN201611648U (en) | 2009-12-15 | 2009-12-15 | Wet etching equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201611648U true CN201611648U (en) | 2010-10-20 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009202134255U Expired - Fee Related CN201611648U (en) | 2009-12-15 | 2009-12-15 | Wet etching equipment |
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|---|---|
| CN (1) | CN201611648U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104681471A (en) * | 2015-03-12 | 2015-06-03 | 京东方科技集团股份有限公司 | Wet etching equipment |
| CN108140572A (en) * | 2015-09-30 | 2018-06-08 | 芝浦机械电子株式会社 | Substrate board treatment and substrate processing method using same |
| CN114804920A (en) * | 2021-01-18 | 2022-07-29 | 江苏科沛达半导体科技有限公司 | Novel high-temperature phosphoric acid etching machine and control mode thereof |
-
2009
- 2009-12-15 CN CN2009202134255U patent/CN201611648U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104681471A (en) * | 2015-03-12 | 2015-06-03 | 京东方科技集团股份有限公司 | Wet etching equipment |
| CN108140572A (en) * | 2015-09-30 | 2018-06-08 | 芝浦机械电子株式会社 | Substrate board treatment and substrate processing method using same |
| CN114804920A (en) * | 2021-01-18 | 2022-07-29 | 江苏科沛达半导体科技有限公司 | Novel high-temperature phosphoric acid etching machine and control mode thereof |
| CN114804920B (en) * | 2021-01-18 | 2024-03-15 | 江苏科沛达半导体科技有限公司 | Novel high-temperature phosphoric acid corrosion machine and control mode thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Free format text: FORMER OWNER: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION Effective date: 20121112 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201203 PUDONG NEW AREA, SHANGHAI TO: 100176 DAXING, BEIJING |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20121112 Address after: 100176 No. 18, Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101020 Termination date: 20181215 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |