CN109473330A - Semiconductor equipment cleaning method and its semiconductor technology method - Google Patents
Semiconductor equipment cleaning method and its semiconductor technology method Download PDFInfo
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- CN109473330A CN109473330A CN201710799686.9A CN201710799686A CN109473330A CN 109473330 A CN109473330 A CN 109473330A CN 201710799686 A CN201710799686 A CN 201710799686A CN 109473330 A CN109473330 A CN 109473330A
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- 238000000034 method Methods 0.000 title claims abstract description 80
- 238000004140 cleaning Methods 0.000 title claims abstract description 57
- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 238000005516 engineering process Methods 0.000 title claims abstract description 32
- 238000001816 cooling Methods 0.000 claims abstract description 54
- 238000010926 purge Methods 0.000 claims abstract description 28
- 230000000694 effects Effects 0.000 claims abstract description 10
- 230000008646 thermal stress Effects 0.000 claims abstract description 8
- 239000007789 gas Substances 0.000 claims description 40
- 230000008859 change Effects 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 238000005336 cracking Methods 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 230000009514 concussion Effects 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 25
- 230000009471 action Effects 0.000 abstract description 7
- 239000002245 particle Substances 0.000 abstract description 7
- 230000002411 adverse Effects 0.000 abstract description 3
- 235000019628 coolness Nutrition 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 44
- 230000008569 process Effects 0.000 description 20
- 239000012535 impurity Substances 0.000 description 12
- 230000007423 decrease Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000005406 washing Methods 0.000 description 6
- 238000010792 warming Methods 0.000 description 5
- 230000006378 damage Effects 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000003749 cleanliness Effects 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910017464 nitrogen compound Inorganic materials 0.000 description 3
- 150000002830 nitrogen compounds Chemical class 0.000 description 3
- 230000000087 stabilizing effect Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000010981 drying operation Methods 0.000 description 2
- 239000008141 laxative Substances 0.000 description 2
- 230000001543 purgative effect Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
- B08B5/04—Cleaning by suction, with or without auxiliary action
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
- B08B7/0092—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by cooling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/08—Cleaning containers, e.g. tanks
- B08B9/083—Removing scrap from containers, e.g. removing labels
Abstract
The present invention provides a kind of semiconductor equipment cleaning method and its semiconductor technology method, cleaning method the following steps are included: 1) by the indoor temperature of reaction chamber from the first preset temperature with preset first rate of temperature fall fast cooling to the second preset temperature；2) by the indoor temperature of reaction chamber from the second preset temperature with preset second rate of temperature fall fast cooling to third preset temperature；During two fast coolings, the film deposited on reaction chamber inner wall cracks peeling under the action of thermal stress；While fast cooling, to reaction chamber inside be passed through purge gas and cleaned, the film discharge reaction chamber that will be peeled off.The present invention can not only effectively remove the residual gas and particle remained on inside semiconductor equipment reaction chamber, moreover it is possible to the unstable film on reaction chamber inner wall be effectively removed, to improve product yield.This method is easy to operate, low in cost, and does not occupy the production time additionally and without the output capacity to equipment cause any adverse effect.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly to a kind of semiconductor equipment cleaning method and its semiconductor work
Process.
Background technique
With the rapid development of electronic technology, wafer size is increasing in technical field of semiconductors, and line width is increasingly
Small, manufacture machine is also increasingly finer, to propose increasingly higher demands to manufacturing process.It is any small in wafer manufacture
Impurity particle all may cause the pollution of wafer, even result in scrapping so that cause huge loss, therefore to miscellaneous for wafer
The control of matter particle is increasingly stringenter.
In semiconductor fabrication process, required film is formed in crystal column surface using depositing operation in device reaction cavity room
It is very important process.But in actual process production process, although being formd desired by the producer in crystal column surface
Film, but simultaneously on the inner wall of equipment reaction chamber, it is easily formed the undesirable film of the producer.These are formed in instead
Film on chamber inner wall is answered via technique production constantly accumulation repeatedly, finally formd on reaction chamber inner wall one layer or
Multilayer impurity film layer as composed by stabilizing films and unstable film.If these impurity films are stabilizing films, that
Usually too big harm not will cause to the technique production of wafer, etchant gas need to be only utilized in the time-based maintenance operation of equipment
Or corrosive liquid is periodically removed by way of corrosion.But the unstable film in impurity film is likely in technique
It is reacted in production process with reaction gas used in art production process and generates new impurity film, or produced in technique
It is cracked in journey and becomes the impurity particle pollution source on wafer, cause product yield to decline, it is therefore necessary to often to reaction
Unstable film on chamber inner wall is removed operation.If gone in the way of corrosion by etchant gas or corrosive liquid
If removing, not only required cost is larger but also complicated for operation, takes a long time, seriously affects the output capacity of equipment, more potential danger
Danger is that etchant gas or corrosive liquid are very big to human body and environmental hazard, once leakage will cause great production accident and people
Member's damage.Therefore, to reduce risk to the greatest extent, semiconductor manufacturing factory all reduces the corrosion to impurity film to the greatest extent and removes operation.It is logical
After the wafer process production of Chang Yi batch, it is simple to reaction chamber progress clear to be only passed through nitrogen or inert gas
It washes.But this cleaning way can only remove the indoor residual gas of reaction chamber and particle, unclear to unstable impurity film
Wash effect.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of semiconductor equipment cleaning sides
Method, for solving can not to effectively remove in conventional cleaning between carrying out product batches in the prior art, to remain on semiconductor equipment anti-
The problem of answering the unstable film on chamber inner wall.
In order to achieve the above objects and other related objects, the present invention provides a kind of semiconductor equipment cleaning method, and described half
Conductor device includes reaction chamber, film is deposited on the reaction chamber inner wall, the semiconductor equipment cleaning method is at least
The following steps are included:
1) by the indoor temperature of the reaction chamber from the first preset temperature with preset first rate of temperature fall fast cooling extremely
Second preset temperature；And
2) by the indoor temperature of the reaction chamber from the second preset temperature with preset second rate of temperature fall fast cooling extremely
Third preset temperature；During above-mentioned two fast cooling, the film deposited on the reaction chamber inner wall is answered in heat
It cracks and peels off under the action of power；
Wherein, while fast cooling, purge gas is passed through inside Xiang Suoshu reaction chamber and is cleaned, will peel off
Film the reaction chamber is discharged；By the indoor temperature of the reaction chamber from the first preset temperature with preset first cooling speed
The flow for the purge gas being passed through during rate fast cooling to the second preset temperature is less than will be in the reaction chamber
Temperature from the second preset temperature with preset second rate of temperature fall fast cooling to third preset temperature during be passed through
The flow of the purge gas.
As a preferred solution of the present invention, first rate of temperature fall is identical as second rate of temperature fall.
As a preferred solution of the present invention, first rate of temperature fall is different from second rate of temperature fall.
As a preferred solution of the present invention, first rate of temperature fall is greater than 10 DEG C/min；The second cooling speed
Rate is greater than 10 DEG C/min.
As a preferred solution of the present invention, indoor first preset temperature of the reaction chamber is 500 DEG C~1000 DEG C；
Second preset temperature differs 100 DEG C~150 DEG C with first preset temperature；The third preset temperature and described first
Preset temperature differs 200 DEG C~250 DEG C.
As a preferred solution of the present invention, in step 3), while fast cooling, by the indoor pressure of the reaction chamber
It emphasizes that whole to default pressure is shaken with periodical to change, and clear to being passed through inside the reaction chamber under above-mentioned pressure conditions
Gas washing body is cleaned.
As a preferred solution of the present invention, the default pressure is less than or equal to 10 millitorrs；The reaction chamber is indoor
The periodicity of pressure concussion variation is 2~32 periods；Time needed for each period of change is 40 seconds~110 seconds.
As a preferred solution of the present invention, the film deposited on the reaction chamber inner wall is polysilicon membrane or nitrogen
Compound film；The purge gas is nitrogen.
The present invention also provides a kind of semiconductor technology method, the semiconductor technology method includes the following steps:
1) a batch products making technology is carried out, and by the batch products after completing the batch products making technology
Remove reaction chamber；
2) using the cleaning method as described in above-mentioned either a program to being cleaned inside the reaction chamber；
3) after cleaning, the indoor temperature of the reaction chamber is risen into standby temperature, and the reaction chamber is indoor
Pressure restores to standard atmospheric pressure；And
4) the indoor temperature of the reaction chamber is risen into reaction temperature, and after vacuum being evacuated in the reaction chamber, into
The another batch products making technology of row.
As a preferred solution of the present invention, above-mentioned steps 4) it later further include repeating step 1)~step 4) at least one
Secondary step.
As a preferred solution of the present invention, to the mistake cleaned inside the reaction chamber in the step 2)
Cheng Zhong carries out wafer cooling simultaneously for the batch products for removing the reaction chamber and discharges with wafer.
As described above, semiconductor equipment cleaning method of the invention, has the advantages that semiconductor of the invention is set
Standby cleaning method makes the unstable film on reaction chamber inner wall generate cracking under the action of thermal stress by fast cooling；
It is passed through purge gas during fast cooling and remains in gas inside reaction chamber by the film impurities after cracking and originally
Body and impurity particle discharge reaction chamber achieve the purpose that effectively to promote product yield to improve the cleanliness of reaction chamber.
This cleaning method is easy to operate, low in cost, and carries out during the conventional cleaning between product batches, therefore do not occupy additionally
Production time causes any adverse effect without the output capacity to equipment.
Detailed description of the invention
Fig. 1 is shown as the semiconductor equipment cleaning method flow chart of the embodiment of the present invention one.
Fig. 2 is shown as the SEM scanning electron microscope (SEM) photograph of semiconductor equipment reaction chamber inner wall after progress wafer process production.
After Fig. 3 is shown as the two step fast cooling steps for implementing the semiconductor equipment cleaning method of the embodiment of the present invention one
The SEM scanning electron microscope (SEM) photograph of reaction chamber inner wall.
Fig. 4 is shown as implementing the SEM of the reaction chamber inner wall after the semiconductor equipment cleaning method of the embodiment of the present invention one
Scanning electron microscope (SEM) photograph.
Fig. 5 is shown as the temperature change schematic diagram in the implementation process of the embodiment of the present invention one.
Fig. 6 is shown as implementing the structural schematic diagram of semiconductor equipment of the invention.
Fig. 7 is shown as the temperature change schematic diagram in the implementation process of the embodiment of the present invention two.
Component label instructions
11 reaction chambers
12 fast cooling devices
13 heaters
14 reaction chamber shutters
15 load-lock chambers
S11~S12 step 1)~step 2)
Specific embodiment
Illustrate embodiments of the present invention below by way of particular specific embodiment, those skilled in the art can be by this explanation
Other advantages and efficacy of the present invention can be easily understood for content disclosed by book.The present invention can also be by addition different specific
Embodiment is embodied or practiced, and the various details in this specification can also not carried on the back based on different viewpoints and application
From carrying out various modifications or alterations under spirit of the invention.
Fig. 1 is please referred to Fig. 7.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, though only show in schema with related component in the present invention rather than package count when according to actual implementation
Mesh, shape and size are drawn, when actual implementation form, quantity and the ratio of each component can arbitrarily change for one kind, and its
Assembly layout kenel may also be increasingly complex.
Embodiment one
As shown in Figures 1 to 6.The present invention provides a kind of semiconductor equipment cleaning method, the semiconductor equipment cleaning side
Method includes at least following steps:
Step S11, by the temperature in reaction chamber 11 from the first preset temperature with the preset fast prompt drop of first rate of temperature fall
Temperature is to the second preset temperature；
Step S12 is fast with preset second rate of temperature fall from the second preset temperature by the temperature in the reaction chamber 11
Speed is cooled to third preset temperature；During above-mentioned two fast cooling, the film that is deposited on 11 inner wall of reaction chamber
It cracks and peels off under the action of thermal stress；Wherein, while fast cooling, purgative gas is passed through inside Xiang Suoshu reaction chamber 11
Body is cleaned, and the reaction chamber 11 is discharged in the film that will be peeled off；Temperature in the reaction chamber 11 is pre- from first
If temperature with preset first rate of temperature fall fast cooling to the second preset temperature during the purge gas that is passed through
Flow be less than by the temperature in the reaction chamber 11 from the second preset temperature with preset second rate of temperature fall fast cooling extremely
The flow for the purge gas being passed through during third preset temperature.
As an example, the reaction chamber 11 is usually pyroreaction chamber, it is preferable that the reaction chamber 11 is just complete
The reaction chamber of wafer is produced and unloaded at technique, it is further preferable that the reaction chamber 11 is just to complete high temperature polysilicon
Siliceous deposits or the reaction chamber of high temperature nitrogen compound depositing operation production.
Especially, it should be noted that stabilizing films and unstable film are deposited on 11 inner wall of reaction chamber, wherein
Unstable film may include but be not limited only to polysilicon film or nitride film, the unstable film is in fast cooling process
The middle effect because of thermal stress starts to crack, therefore the present invention is directed unstable film cleaning method, for convenient for narration, to
Unstable film is referred to as film without exception afterwards.After carrying out wafer process production, semiconductor equipment as shown in Figure 6 it is described anti-
Answer the situation on 11 inner wall of chamber as shown in the SEM electron microscope of Fig. 2.
As an example, the fast cooling operation is by being located at the fast cooling device 12 outside the reaction chamber 11
(RCU) it carries out, the fast cooling device 12 can be to include the cooling device of cooling water pipeline or include condensed gas pipe
The cooling device in road.
As an example, first preset temperature can be set according to different technique, it is preferable that described first
Preset temperature can be but be not limited only to the technique standby temperature of the semiconductor production equipment, it is further preferable that the present embodiment
In, first preset temperature is 500 DEG C~1000 DEG C.
It should be noted that the purpose of setting second preset temperature be for the ease of to entire cleaning process preferably
It is managed, according to from the first preset temperature fast cooling to film described in the temperature-fall period of second preset temperature
Cracking situation and cleaning effect determine whether the necessity for adjusting the flow of the rate of temperature fall and/or be passed through purge gas,
Therefore, second preset temperature can be set according to technique difference, it is preferable that in the present embodiment, described second is pre-
If temperature differs 100 DEG C~150 DEG C with first preset temperature.
Film after fast cooling operation on 11 inner wall of reaction chamber generates under the action of thermal stress to be split
Solution, the situation of 11 inner wall of the reaction chamber after the film cracking is as shown in the SEM electron microscope of Fig. 3.
It should be noted that the temperature difference of the third preset temperature and first preset temperature cannot be too small, otherwise institute
It states film to crack to be not enough, cleaning effect is bad, but can not be too big, and otherwise the temperature difference may well cause to damage very much to equipment
Evil, and because of cleaning process after heating-up time too long influence the production of subsequent technique.As an example, the third is default
Temperature differs 200 DEG C~250 DEG C with first preset temperature.
Explanation is also needed, first rate of temperature fall and second rate of temperature fall cannot be too small, otherwise described
Film cracks to be not enough, and cleaning effect is bad, but can not be too big, and otherwise rate of temperature fall greatly may also cause equipment very much
Damage.As an example, first rate of temperature fall can be identical with second rate of temperature fall, it is preferable that in the present embodiment,
First rate of temperature fall and second rate of temperature fall are all larger than 10 DEG C/min, it is further preferable that in the present embodiment, institute
Stating the first rate of temperature fall and second rate of temperature fall is 15 DEG C/min.
In other examples, first rate of temperature fall can be different from second rate of temperature fall.
As an example, in the step S13, while fast cooling, the pressure in the reaction chamber 11 is adjusted
It is shaken and is changed with periodical to default pressure, and to being passed through purgative gas inside the reaction chamber 11 under above-mentioned pressure conditions
Body is cleaned.By the pressure in the reaction chamber 11 adjust to default pressure with periodical concussion variation purpose be by
It is unstable in the air-flow in the reaction chamber 11, turbulent flow can be formed in the reaction chamber 11, so that the reaction chamber
The film after particle and cracking in 11 is raised, thus be easier to take the reaction chamber 11 out of by the purge gas,
So that cleaning is more thorough.
As an example, the default pressure is less than or equal to 10 millitorrs；What the pressure concussion in the reaction chamber 11 changed
Periodicity is 2~32 periods；Time needed for each period of change is 40 seconds~110 seconds.
As an example, adjusting the pressure in the reaction chamber 11 can use the included vacuum pump (not shown) of equipment,
By adjusting the pumping speed of vacuum pump, or by adjusting the gas flow being passed through in the reaction chamber 11 or both same stepping
Capable method.
As an example, the purge gas is nitrogen, in other examples, the purge gas may be indifferent gas
Body.
As an example, the purge gas flow can according to need and be set, such as 20~50slm, show at other
In example, the purge gas flow can also be greater than 50slm.
It should be noted that save the dosage of purge gas, in the present embodiment, by the temperature in the reaction chamber 11
Degree from the first preset temperature with preset first rate of temperature fall fast cooling to the second preset temperature during be passed through described in
The flow of purge gas is less than the temperature in the reaction chamber 11 from the second preset temperature with preset second rate of temperature fall
The flow for the purge gas being passed through during fast cooling to third preset temperature, for example, by the reaction chamber 11
Interior temperature from the first preset temperature with preset first rate of temperature fall fast cooling to the second preset temperature during be passed through
The flow of the purge gas be 20slm, by the temperature in the reaction chamber 11 from the second preset temperature with preset the
The flow for the purge gas being passed through during two rate of temperature fall fast coolings to third preset temperature is 50slm, at it
In his example, it can also be additionally carried out setting, herein without limitation.
The situation on 11 inner wall of the reaction chamber after completing the cleaning can be seen as shown in the SEM electron microscope of Fig. 4
Out, using the cleaning method of the application, the cleanliness on 11 inner wall of reaction chamber can be effectively improved, to help to promote work
Product yield in skill production process.
It should be noted that after the completion of the cleaning process, if necessary, can also add to the reaction chamber 11
The process that inside carries out deionized water high pressure washing, and also need to carry out drying operation usually after deionized water high pressure washing.
In the case that initial temperature in the reaction chamber 11 is lower than the first preset temperature, if necessary, can be first
To heating up inside the reaction chamber 11, the warming temperature can use what semiconductor equipment carried, be located at described anti-
It answers the heater 13 on 11 outer wall of chamber to carry out, external heating device progress, or both can also be borrowed while carrying out, this
Place is without limitation.After initial temperature inside the reaction chamber 11 is risen to first preset temperature and is stablized 2-5 minutes,
It can start to carry out cleaning operation by the cleaning method.Temperature change signal in reaction chamber 11 described in the present embodiment
Figure is as shown in Figure 5, it should be noted that this temperature change schematic diagram is only to illustrate reaction chamber described in the cleaning process
Temperature changing trend inside 11 does not do specific limit temperature, therefore without marking specific temperature value and time value.
Embodiment two
Fig. 6 and Fig. 7 is please referred to, the present invention also provides a kind of semiconductor technology method, the semiconductor technology method includes
Following steps:
1) a batch products making technology is carried out, and by the batch products after completing the batch products making technology
Remove reaction chamber；
2) using cleaning method described in above-described embodiment one to being cleaned inside the reaction chamber；
3) after cleaning, the indoor temperature of the reaction chamber is risen into standby temperature, and the reaction chamber is indoor
Pressure restores to standard atmospheric pressure；And
4) the indoor temperature of the reaction chamber is risen into reaction temperature, and after vacuum being evacuated in the reaction chamber, into
The another batch products making technology of row.
Referring to Fig. 6, carrying out a batch products (not shown) making technology in the reaction chamber 11, the batch is produced
After the completion of product making technology, the reaction chamber shutter 14 positioned at 11 lower end of reaction chamber will be opened, and the batch products will
The load-lock chambers 15 positioned at 11 lower end of reaction chamber are transferred into, after the batch products all transmission, institute
Stating reaction chamber shutter 14 will close.
It should be noted that during the batch products are sent to load-lock chambers 15, the reaction
Chamber shutter 14 is constantly in opening state, therefore the temperature in the reaction chamber 11 can be by from when the production of rigid process ends
Technique produce temperature decline, specific time of decline and specific degree according to equipment different and described batch products quantity not
It is same and different, if more few than the batch products quantity, then the batch products are sent to institute by the reaction chamber 11
The time for stating load-lock chambers 15 is very short, still not less than the described first default temperature after the temperature decline in the reaction chamber 11
Degree, then can be directly to cleaning inside the reaction chamber 11, and specific cleaning step please refers in above-described embodiment one
Description, is not repeated herein；If because the batch products quantity causes the delivery time too long too much, the reaction in the process
There are many temperature decline in chamber 11, then need first to heating up inside the reaction chamber 11, wait be warming up to described default the
One temperature and start cooling cleaning again after temperature is stablized, specific cleaning step also please refers to retouching in above-described embodiment one
It states, is not repeated herein.Explanation is also needed, the warming temperature can use what semiconductor equipment carried, be located at institute
The heater 13 stated on 11 outer wall of reaction chamber carries out, and it is same can also to borrow external heating device progress, or both
Shi Jinhang, and in temperature-rise period, it can continue to be passed through the purge gas as needed, herein without limitation.
After cleaning, the temperature in the reaction chamber 11 is risen into standby temperature, and will be in the reaction chamber 11
Pressure restore to standard atmospheric pressure；And the temperature in the reaction chamber 11 is risen into reaction temperature, and by the reaction
After being evacuated to vacuum in chamber 11, another batch products making technology is carried out.
As an example, above-mentioned steps 4) further include the steps that repeating step 1)~step 4) at least once later.Repeat institute
It states step 1)~step 4) number and can according to need and set, it can be for once, twice or repeatedly.
As an example, above-mentioned steps 2) in being cleaned inside the reaction chamber 11 during, simultaneously for shifting
The batch products of the reaction chamber 11 carry out wafer cooling and wafer electric discharge out.
As an example, temperature versus time curve in reaction chamber 11 described in the embodiment as shown in fig. 7,
Before carrying out a batch products making technology, the temperature in the reaction chamber 11 is in standby temperature (not shown)；Carry out
During the batch products making technology, the temperature in the reaction chamber 11 is warming up to technique production temperature；Complete institute
After stating batch products making technology, the temperature in the reaction chamber 11 is by technique production temperature decline, until starting
When carrying out the cleaning operation, the temperature in the reaction chamber 11 is adjusted to first preset temperature, through fast cooling
It is down to the second preset temperature, and is reduced to third preset temperature finally to complete to clean；It is described anti-after completing the cleaning process
Answer the temperature in chamber 11 that will be warming up to standby temperature.It should be noted that this temperature change schematic diagram is only signal institute
It states the temperature changing trend inside reaction chamber 11 described in cleaning process and does not do specific limit temperature, therefore do not mark
Remember specific temperature value and time value.
Explanation is also needed, if necessary, can be in above-mentioned steps 2) it is additional in the reaction chamber 11 later
Portion carries out the step of deionized water high pressure washing, and also needs to carry out drying operation usually after deionized water high pressure washing.
As an example, the making technology can be any thin film deposition processes, it is specifically, in the present embodiment, described
Making technology is high-temperature deposition process, more specifically, in the present embodiment, the making technology is high temperature polysilicon depositing operation
Or high temperature nitrogen compound depositing operation.
In conclusion the present invention provides a kind of semiconductor equipment cleaning method and its semiconductor technology method, the cleaning
Method at least includes the following steps: 1) the indoor temperature of the reaction chamber is fast with preset first cooling from the first preset temperature
Rate fast cooling is to the second preset temperature；2) the indoor temperature of the reaction chamber is dropped from the second preset temperature with preset second
Warm rate fast cooling is to third preset temperature；During above-mentioned two fast cooling, deposited on the reaction chamber inner wall
Film peeling is cracked under the action of thermal stress；Wherein, it while fast cooling, is passed through inside Xiang Suoshu reaction chamber clear
Gas washing body is cleaned, and the reaction chamber is discharged in the film that will be peeled off；The indoor temperature of the reaction chamber is pre- from first
If temperature with preset first rate of temperature fall fast cooling to the second preset temperature during the purge gas that is passed through
Flow is less than the indoor temperature of the reaction chamber from the second preset temperature with preset second rate of temperature fall fast cooling to third
The flow for the purge gas being passed through during preset temperature.The present invention is made in the reaction chamber by fast cooling
Film on wall generates cracking under the action of thermal stress；Purge gas is passed through during fast cooling by the film after cracking
The reaction chamber is discharged in impurity and the gas remained in inside the reaction chamber originally and impurity particle, to improve institute
The cleanliness for stating reaction chamber achievees the purpose that effectively to promote product yield.This method is easy to operate, low in cost, and
It is carried out during conventional cleaning between product batches, therefore additionally the occupancy production time causes to appoint without the output capacity to equipment
What adverse effect.So the present invention effectively overcomes various shortcoming in the prior art and has high industrial utilization value.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (10)
1. a kind of semiconductor equipment cleaning method, semiconductor equipment include reaction chamber, it is deposited on the reaction chamber inner wall
Film, which is characterized in that the cleaning method at least includes the following steps:
1) by the indoor temperature of the reaction chamber from the first preset temperature with preset first rate of temperature fall fast cooling to second
Preset temperature；And
2) by the indoor temperature of the reaction chamber from the second preset temperature with preset second rate of temperature fall fast cooling to third
Preset temperature；During above-mentioned two fast cooling, the film deposited on the reaction chamber inner wall is in thermal stress
The lower cracking of effect is peeled off；
Wherein, while fast cooling, purge gas is passed through inside Xiang Suoshu reaction chamber and is cleaned, will peel off thin
The reaction chamber is discharged in film；The indoor temperature of the reaction chamber is fast with preset first rate of temperature fall from the first preset temperature
The flow for the purge gas that speed is passed through during being cooled to the second preset temperature is less than the indoor temperature of the reaction chamber
Degree from the second preset temperature with preset second rate of temperature fall fast cooling to third preset temperature during be passed through described in
The flow of purge gas.
2. semiconductor equipment cleaning method according to claim 1, it is characterised in that: first rate of temperature fall with it is described
Second rate of temperature fall is identical.
3. semiconductor equipment cleaning method according to claim 1, it is characterised in that: first rate of temperature fall with it is described
Second rate of temperature fall is different.
4. semiconductor equipment cleaning method according to claim 1, it is characterised in that: first rate of temperature fall is greater than 10
DEG C/min；Second rate of temperature fall is greater than 10 DEG C/min.
5. semiconductor equipment cleaning method according to claim 1, it is characterised in that: the reaction chamber indoor first is pre-
If temperature is 500 DEG C~1000 DEG C；Second preset temperature differs 100 DEG C~150 DEG C with first preset temperature；It is described
Third preset temperature differs 200 DEG C~250 DEG C with first preset temperature.
6. semiconductor equipment cleaning method according to claim 1, it is characterised in that:, will be described while fast cooling
The indoor pressure of reaction chamber, which adjusts to default pressure to shake with periodical, to be changed, and to the reaction under above-mentioned pressure conditions
Chamber interior is passed through purge gas and is cleaned；The default pressure is less than or equal to 10 millitorrs；The indoor pressure of reaction chamber
The periodicity of concussion variation is 2~32 periods；Time needed for each period of change is 40 seconds~110 seconds.
7. semiconductor equipment cleaning method according to any one of claim 1 to 6, it is characterised in that: the reaction chamber
The film deposited in chamber interior walls is polysilicon membrane or nitride film；The purge gas is nitrogen.
8. a kind of semiconductor technology method, which is characterized in that the semiconductor technology method includes the following steps:
1) a batch products making technology is carried out, and removes the batch products after completing the batch products making technology
Reaction chamber；
2) using cleaning method as described in claim 1 to being cleaned inside the reaction chamber；
3) after cleaning, the indoor temperature of the reaction chamber is risen into standby temperature, and by the indoor pressure of the reaction chamber
Restore to standard atmospheric pressure；And
4) the indoor temperature of the reaction chamber is risen into reaction temperature, and after vacuum being evacuated in the reaction chamber, carried out again
One batch products making technology.
9. semiconductor technology method according to claim 8, which is characterized in that further include repeating step 1) after step 4)
~step 4) at least once the step of.
10. semiconductor technology method according to claim 8 or claim 9, it is characterised in that: to described anti-in the step 2)
During answering chamber interior to be cleaned, it is cooling that wafer is carried out simultaneously for the batch products for removing the reaction chamber
It discharges with wafer.
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| CN110504195A (en) * | 2019-08-22 | 2019-11-26 | 上海华力集成电路制造有限公司 | The aqueous vapor monitoring method of reaction cavity |
| CN113838733A (en) * | 2020-06-23 | 2021-12-24 | 拓荆科技股份有限公司 | Method for improving environment in clean chamber |
| CN115612999A (en) * | 2022-10-19 | 2023-01-17 | 长鑫存储技术有限公司 | Semiconductor production equipment and control method and device thereof |
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| CN109473330B (en) | 2020-07-03 |
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