CN115707527A - DK furnace tube cleaning method - Google Patents
DK furnace tube cleaning method Download PDFInfo
- Publication number
- CN115707527A CN115707527A CN202211230298.6A CN202211230298A CN115707527A CN 115707527 A CN115707527 A CN 115707527A CN 202211230298 A CN202211230298 A CN 202211230298A CN 115707527 A CN115707527 A CN 115707527A
- Authority
- CN
- China
- Prior art keywords
- furnace tube
- furnace
- cleaning method
- carrying
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000002253 acid Substances 0.000 claims abstract description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000001035 drying Methods 0.000 claims abstract description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 10
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000001514 detection method Methods 0.000 claims abstract description 10
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 10
- 238000011010 flushing procedure Methods 0.000 claims abstract description 9
- 238000005554 pickling Methods 0.000 claims abstract description 7
- 238000005406 washing Methods 0.000 claims abstract description 7
- 229910001868 water Inorganic materials 0.000 claims abstract description 5
- 239000008367 deionised water Substances 0.000 claims abstract description 4
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 4
- 239000010865 sewage Substances 0.000 claims abstract description 4
- 238000012360 testing method Methods 0.000 claims abstract description 4
- 239000000243 solution Substances 0.000 claims description 12
- 239000011259 mixed solution Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000012545 processing Methods 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000010703 silicon Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910021645 metal ion Inorganic materials 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910008062 Si-SiO2 Inorganic materials 0.000 description 1
- 229910006403 Si—SiO2 Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention relates to a DK furnace tube cleaning method, which belongs to the technical field of chip manufacturing and processing equipment and comprises the following operation steps: the first step is as follows: pickling the DK furnace tube, wherein the used acid solution consists of deionized water, hydrofluoric acid and nitric acid; H2O of acid solution: HF: HNO3 volume ratio is 9:3:1 to 200:65: 12. The second step is that: flushing by using UPW (ultra-high pressure) for 5 times in 10 minutes each time, and draining the sewage after flushing. The third step: and after the DK furnace tubes are washed, the DK furnace tubes are dried by adopting N2, and the drying and drying time of the DK furnace tubes in an N2 cabinet is more than or equal to 12 hours. The fourth step: and (3) carrying out acidity detection on the DK furnace tube, carrying out acidity detection on the inside of the furnace tube by using a pH test paper, finishing cleaning if the pH value is 7, carrying out UPW (ultra high performance) washing if the pH value is not 7, and then taking out the DK furnace tube to be dried and dried again in an N2 cabinet for more than or equal to 12 hours. Has the characteristics of simple operation, thorough cleaning and good stability. The problem of the boiler tube washs the degree of difficulty big is solved.
Description
Technical Field
The invention relates to the technical field of chip manufacturing and processing equipment, in particular to a DK furnace tube cleaning method.
Background
With the continuous development of chip manufacturing technology, the size of a semiconductor silicon wafer is larger and larger, the technological requirements are stricter and stricter, and higher requirements are provided for the effect of cleaning a furnace tube regularly. Simple furnace tube cleaning has not been satisfactory for practical production applications, particularly for device products with higher requirements for metal contamination. Generally, the chip manufacturing needs to go through repeated processes such as a cleaning process, a diffusion process, an injection process, a photolithography process, an etching process, etc., after multiple film forming, the more residual metal ions and high molecular polymer residues are accumulated in the furnace tube, and if the residual metal ions and the high molecular polymer residues are removed irregularly, metal pollution and particle sources may be formed, thereby affecting the process yield and the product stability.
The effects of metal contamination on semiconductor devices are: the metal impurities are easy to form and accumulate on the Si-SiO2 interface, which affects the Integrity of the Gate Oxide layer (GOI), reduces the Oxide breakdown voltage (BV-OX), and causes the device to form Leakage (leak). A CMOS analog Sensor (CIS) product is particularly sensitive to metal impurities, particularly heavy metal impurities, and is prone to generate Dark Current (DC) to cause White Spot Defect.
Metal ions under high temperature conditions have higher diffusion coefficients in silicon and silicon dioxide, so after the furnace tube is operated at high temperature for a long time, metal pollution (quartz or silicon carbide parts) caused by the current process or metal pollution brought by the previous process is easy to diffuse into the silicon wafer and is difficult to remove by cleaning, thereby forming permanent defects. Therefore, the furnace platen must be cleaned periodically. The traditional furnace tube cleaning method comprises the following steps: and (3) cleaning with N2, wherein the N2 can remove small particles and organic residues in the furnace tube at high temperature but cannot remove metal ions.
Disclosure of Invention
The invention mainly solves the defect that metal ions cannot be removed in the prior art, and provides a DK furnace tube cleaning method which has the characteristics of simplicity in operation, thorough cleaning and good stability. The problem of the boiler tube washs the degree of difficulty big is solved. The stability of the semiconductor silicon wafer processing technology is improved.
The technical problem of the invention is mainly solved by the following technical scheme:
a DK furnace tube cleaning method comprises the following operation steps:
the first step is as follows: carrying out acid pickling on the DK furnace tube, wherein the used acid solution consists of deionized water, hydrofluoric acid and nitric acid; H2O of acid solution: HF: the volume ratio of HNO3 is 9:3:1 to 200:65: 12. The strong oxidizing property of HNO3 can oxidize metal atoms into ion state and silicon atoms on the surface into silicon dioxide, and HF peels off metal impurities and an oxide layer on the surface of the silicon, thereby obtaining a clean furnace tube without metal and oxide contamination. The metal pollution in the furnace tube is removed through the oxidation-reduction reaction of nitric acid and hydrofluoric acid.
The second step is that: flushing by using UPW (ultra-high pressure) for 5 times in 10 minutes each time, and draining the sewage after flushing.
The third step: and after the DK furnace tubes are washed, N2 is adopted for drying, and the drying and drying time of the DK furnace tubes in an N2 cabinet is more than or equal to 12 hours.
The fourth step: and (3) carrying out acidity detection on the DK furnace tube, carrying out acidity detection on the detection in the furnace tube by using pH test paper, finishing cleaning if the pH value is 7, carrying out UPW (ultra high performance) washing if the pH value is not 7, and taking out the DK furnace tube to be dried and blow-dried in an N2 cabinet for more than or equal to 12 hours.
Preferably, the DK furnace tube is cleaned with an acid solution for 50 to 70 minutes.
Preferably, when the acid washing process is performed for half, the temperature of the mixed solution is controlled to be constant, and is maintained at 45 to 55 ℃.
Preferably, the temperature is raised at a rate of 2 degrees centigrade per minute, and is lowered to normal temperature at a rate of 3 degrees centigrade per minute after the completion of the pickling process.
Preferably, the make-up of water vapor is performed after the temperature of the acid solution is kept constant.
The invention can achieve the following effects:
compared with the prior art, the DK furnace tube cleaning method provided by the invention has the characteristics of simplicity in operation, thorough cleaning and good stability. The problem of the boiler tube wash the degree of difficulty big is solved. The stability of the semiconductor silicon wafer processing technology is improved.
Detailed Description
The technical scheme of the invention is further specifically described by the following embodiments.
The embodiment is as follows: a DK furnace tube cleaning method comprises the following operation steps:
the first step is as follows: pickling the DK furnace tube, wherein the used acid solution consists of deionized water, hydrofluoric acid and nitric acid; H2O of acid solution: HF: HNO3 volume ratio is 9:3:1 to 200:65: 12. The DK tubes were acid solution cleaned for 60 minutes. When the acid washing process is carried out for a half, the mixed solution needs to be subjected to constant temperature control, and the temperature is kept between 50 ℃. After the temperature of the acid solution was kept constant, water vapor was replenished.
And the temperature is increased at the speed of 2 ℃ per minute during the temperature increase, and is reduced to the normal temperature at the speed of 3 ℃ per minute after the pickling process is finished.
The second step is that: flushing by using UPW (ultra-high pressure) for 5 times in 10 minutes each time, and draining the sewage after flushing.
The third step: and after the DK furnace tubes are washed, N2 is adopted for drying, and the drying and drying time of the DK furnace tubes in an N2 cabinet is more than or equal to 12 hours.
The fourth step: and (3) carrying out acidity detection on the DK furnace tube, carrying out acidity detection on the detection in the furnace tube by using pH test paper, finishing cleaning if the pH value is 7, carrying out UPW (ultra high performance) washing if the pH value is not 7, and taking out the DK furnace tube to be dried and blow-dried in an N2 cabinet for more than or equal to 12 hours.
In conclusion, the DK furnace tube cleaning method has the characteristics of simplicity in operation, thorough cleaning and good stability. The problem of the boiler tube washs the degree of difficulty big is solved. The stability of the semiconductor silicon wafer processing technology is improved.
The above description is only an embodiment of the present invention, but the structural features of the present invention are not limited thereto, and any changes or modifications within the scope of the present invention by those skilled in the art are covered by the present invention.
Claims (5)
1. A DK furnace tube cleaning method is characterized by comprising the following operation steps:
the first step is as follows: pickling the DK furnace tube, wherein the used acid solution consists of deionized water, hydrofluoric acid and nitric acid; H2O of acid solution: HF: HNO3 volume ratio is 9:3:1 to 200:65:12 in the middle;
the second step: flushing by using UPW (ultra-high Performance water), wherein flushing is carried out for 10 minutes each time and for 5 times, and sewage is drained after flushing;
the third step: after the DK furnace tubes are washed, N2 is adopted for drying, and the drying and drying time of the DK furnace tubes in an N2 cabinet is more than or equal to 12 hours;
the fourth step: and (3) carrying out acidity detection on the DK furnace tube, carrying out acidity detection on the inside of the furnace tube by using a pH test paper, finishing cleaning if the pH value is 7, carrying out UPW (ultra high performance) washing if the pH value is not 7, and then taking out the DK furnace tube to be dried and dried again in an N2 cabinet for more than or equal to 12 hours.
2. The DK furnace tube cleaning method according to claim 1, wherein: the DK furnace tube is cleaned by acid solution for 50-70 minutes.
3. The DK furnace tube cleaning method according to claim 1, wherein: when the acid washing process is carried out for half, the mixed solution needs to be controlled at constant temperature, and the temperature is kept between 45 ℃ and 55 ℃.
4. The DK furnace tube cleaning method according to claim 3, wherein: the temperature is raised at the speed of 2 ℃ per minute during the temperature raising, and is reduced to the normal temperature at the speed of 3 ℃ per minute after the pickling process is finished.
5. The DK furnace tube cleaning method according to claim 3, wherein: after the temperature of the acid solution was kept constant, water vapor was replenished.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211230298.6A CN115707527A (en) | 2022-10-08 | 2022-10-08 | DK furnace tube cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211230298.6A CN115707527A (en) | 2022-10-08 | 2022-10-08 | DK furnace tube cleaning method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115707527A true CN115707527A (en) | 2023-02-21 |
Family
ID=85213016
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211230298.6A Pending CN115707527A (en) | 2022-10-08 | 2022-10-08 | DK furnace tube cleaning method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115707527A (en) |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5704986A (en) * | 1995-09-18 | 1998-01-06 | Taiwan Semiconductor Manufacturing Company Ltd | Semiconductor substrate dry cleaning method |
| US5851303A (en) * | 1996-05-02 | 1998-12-22 | Hemlock Semiconductor Corporation | Method for removing metal surface contaminants from silicon |
| TW437940U (en) * | 2000-09-21 | 2001-05-28 | Jasnmake Ind Co Ltd | Improved furnace tube transmission structure for semiconductor diffusion furnace tube cleaning machine |
| TW495863B (en) * | 2000-08-11 | 2002-07-21 | Chem Trace Inc | System and method for cleaning semiconductor fabrication equipment |
| CN101148247A (en) * | 2007-08-16 | 2008-03-26 | 郑州大学 | Carbon nanometer tube/silicon honeycomb array preparing method |
| KR20120131702A (en) * | 2011-05-26 | 2012-12-05 | (주)에스아이솔리드텍 | Cleanimg Process of Semiconductor Silicone Byproduct and Synthesis Method of High-Purity Silicone Cabide Using This |
| CN103199005A (en) * | 2013-03-11 | 2013-07-10 | 常州捷佳创精密机械有限公司 | Cleaning process method of crystal silicon slice |
| US20150037607A1 (en) * | 2013-07-31 | 2015-02-05 | Yasunaga Itoh | Aluminum alloy brazing sheet and method for producing the same |
| CN109712866A (en) * | 2017-10-26 | 2019-05-03 | 东莞新科技术研究开发有限公司 | The cleaning method of wafer |
| CN110788062A (en) * | 2019-11-07 | 2020-02-14 | 无锡鼎桥新能源科技有限公司 | Graphite boat cleaning process |
| CN110813936A (en) * | 2019-11-01 | 2020-02-21 | 江苏亚电科技有限公司 | Quartz furnace tube immersion cleaning method |
| CN112928017A (en) * | 2021-04-02 | 2021-06-08 | 杭州中欣晶圆半导体股份有限公司 | Cleaning method for effectively removing metal on surface of silicon wafer |
| CN113690130A (en) * | 2021-10-27 | 2021-11-23 | 广州粤芯半导体技术有限公司 | Wet cleaning process |
| CN114999899A (en) * | 2022-08-08 | 2022-09-02 | 广州粤芯半导体技术有限公司 | Wafer cleaning method |
-
2022
- 2022-10-08 CN CN202211230298.6A patent/CN115707527A/en active Pending
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5704986A (en) * | 1995-09-18 | 1998-01-06 | Taiwan Semiconductor Manufacturing Company Ltd | Semiconductor substrate dry cleaning method |
| US5851303A (en) * | 1996-05-02 | 1998-12-22 | Hemlock Semiconductor Corporation | Method for removing metal surface contaminants from silicon |
| TW495863B (en) * | 2000-08-11 | 2002-07-21 | Chem Trace Inc | System and method for cleaning semiconductor fabrication equipment |
| TW437940U (en) * | 2000-09-21 | 2001-05-28 | Jasnmake Ind Co Ltd | Improved furnace tube transmission structure for semiconductor diffusion furnace tube cleaning machine |
| CN101148247A (en) * | 2007-08-16 | 2008-03-26 | 郑州大学 | Carbon nanometer tube/silicon honeycomb array preparing method |
| KR20120131702A (en) * | 2011-05-26 | 2012-12-05 | (주)에스아이솔리드텍 | Cleanimg Process of Semiconductor Silicone Byproduct and Synthesis Method of High-Purity Silicone Cabide Using This |
| CN103199005A (en) * | 2013-03-11 | 2013-07-10 | 常州捷佳创精密机械有限公司 | Cleaning process method of crystal silicon slice |
| US20150037607A1 (en) * | 2013-07-31 | 2015-02-05 | Yasunaga Itoh | Aluminum alloy brazing sheet and method for producing the same |
| CN109712866A (en) * | 2017-10-26 | 2019-05-03 | 东莞新科技术研究开发有限公司 | The cleaning method of wafer |
| CN110813936A (en) * | 2019-11-01 | 2020-02-21 | 江苏亚电科技有限公司 | Quartz furnace tube immersion cleaning method |
| CN110788062A (en) * | 2019-11-07 | 2020-02-14 | 无锡鼎桥新能源科技有限公司 | Graphite boat cleaning process |
| CN112928017A (en) * | 2021-04-02 | 2021-06-08 | 杭州中欣晶圆半导体股份有限公司 | Cleaning method for effectively removing metal on surface of silicon wafer |
| CN113690130A (en) * | 2021-10-27 | 2021-11-23 | 广州粤芯半导体技术有限公司 | Wet cleaning process |
| CN114999899A (en) * | 2022-08-08 | 2022-09-02 | 广州粤芯半导体技术有限公司 | Wafer cleaning method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102082089B (en) | Method for removing photoresist | |
| JP3105770B2 (en) | Method for manufacturing semiconductor device | |
| CN110828299A (en) | Texturing cleaning method and heterojunction battery | |
| CN111446188A (en) | Semiconductor silicon wafer surface cleaning mechanism and cleaning process thereof | |
| US6303482B1 (en) | Method for cleaning the surface of a semiconductor wafer | |
| TWI770556B (en) | Cleaning method for parts of semiconductor processing equipment | |
| US5704986A (en) | Semiconductor substrate dry cleaning method | |
| KR100207469B1 (en) | Cleaning solution for semiconductor substrate and cleaning method thereby | |
| CN109473330B (en) | Semiconductor equipment cleaning method and semiconductor process method thereof | |
| CN112928017A (en) | Cleaning method for effectively removing metal on surface of silicon wafer | |
| US5803980A (en) | De-ionized water/ozone rinse post-hydrofluoric processing for the prevention of silicic acid residue | |
| CN115707527A (en) | DK furnace tube cleaning method | |
| CN101826451A (en) | Process for cleaning ultra-thin oxide layer before growth | |
| CN102122615B (en) | Method for pretreating solution for wet etching | |
| CN113690131A (en) | Wet cleaning process | |
| CN113690130A (en) | Wet cleaning process | |
| CN107170665B (en) | Method for reducing silicon damage in silicon oxide wet etching | |
| CN115799045A (en) | Single wafer cleaning method for reducing surface particles | |
| JP6196094B2 (en) | Manufacturing method of semiconductor device | |
| KR0171983B1 (en) | Wafer cleaning method | |
| CN115036211A (en) | Method for manufacturing grid oxide layer | |
| CN116313761A (en) | Method for monitoring and preventing oxide residue generated in double grid electrode | |
| US20120037191A1 (en) | Cleaning sequence for oxide quality monitoring short-loop semiconductor wafer | |
| KR100865442B1 (en) | Wafer cleaning method for removing stripe defect | |
| KR100196508B1 (en) | Method of cleaning polysilicon of semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |