CN109473330B - Semiconductor equipment cleaning method and semiconductor process method thereof - Google Patents
Semiconductor equipment cleaning method and semiconductor process method thereof Download PDFInfo
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- CN109473330B CN109473330B CN201710799686.9A CN201710799686A CN109473330B CN 109473330 B CN109473330 B CN 109473330B CN 201710799686 A CN201710799686 A CN 201710799686A CN 109473330 B CN109473330 B CN 109473330B
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- 238000000034 method Methods 0.000 title claims abstract description 110
- 238000004140 cleaning Methods 0.000 title claims abstract description 90
- 230000008569 process Effects 0.000 title claims abstract description 68
- 239000004065 semiconductor Substances 0.000 title claims abstract description 44
- 238000001816 cooling Methods 0.000 claims abstract description 63
- 238000004519 manufacturing process Methods 0.000 claims abstract description 29
- 230000009471 action Effects 0.000 claims abstract description 9
- 230000008646 thermal stress Effects 0.000 claims abstract description 9
- 239000007789 gas Substances 0.000 claims description 38
- 230000008859 change Effects 0.000 claims description 11
- 230000009467 reduction Effects 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 238000010926 purge Methods 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
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- 238000007599 discharging Methods 0.000 claims description 3
- 238000003672 processing method Methods 0.000 claims 3
- 239000002245 particle Substances 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 7
- 230000002411 adverse Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 34
- 235000012431 wafers Nutrition 0.000 description 16
- 239000012535 impurity Substances 0.000 description 13
- 239000010409 thin film Substances 0.000 description 11
- 230000003247 decreasing effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000005137 deposition process Methods 0.000 description 5
- 230000006378 damage Effects 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000003749 cleanliness Effects 0.000 description 3
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
- B08B5/04—Cleaning by suction, with or without auxiliary action
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
- B08B7/0092—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by cooling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/08—Cleaning containers, e.g. tanks
- B08B9/083—Removing scrap from containers, e.g. removing labels
Abstract
The invention provides a semiconductor equipment cleaning method and a semiconductor process method thereof, wherein the cleaning method comprises the following steps: 1) rapidly cooling the temperature in the reaction chamber from a first preset temperature to a second preset temperature at a preset first cooling rate; 2) rapidly cooling the temperature in the reaction chamber from the second preset temperature to a third preset temperature at a preset second cooling rate; in the two rapid cooling processes, the film deposited on the inner wall of the reaction chamber is cracked and peeled off under the action of thermal stress; and when the temperature is rapidly reduced, cleaning gas is introduced into the reaction chamber for cleaning so as to discharge the peeled film out of the reaction chamber. The invention not only can effectively remove residual gas and particles remained in the reaction chamber of the semiconductor equipment, but also can effectively remove unstable films on the inner wall of the reaction chamber, thereby improving the yield of products. The method is simple to operate and low in cost, does not occupy additional production time and does not cause any adverse effect on the yield of equipment.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor equipment cleaning method and a semiconductor process method thereof.
Background
With the rapid development of electronic technology, the size of a wafer in the field of semiconductor technology is larger and smaller, the line width is smaller and finer, and the manufacturing machine is finer and finer, thereby increasing the requirements on the manufacturing process. The control of the impurity particles is becoming more and more strict, because any tiny impurity particles in the wafer manufacturing may cause the contamination of the wafer, and even cause the rejection of the wafer to cause huge loss.
In a semiconductor manufacturing process, it is an important process to form a desired thin film on a wafer surface by a deposition process in a reaction chamber of a device. However, in the actual process, although a thin film desired by the manufacturer is formed on the surface of the wafer, a thin film not desired by the manufacturer is also easily formed on the inner wall of the reaction chamber of the apparatus. The films formed on the inner wall of the reaction chamber are accumulated continuously through repeated process production, and finally one or more impurity film layers consisting of stable films and unstable films are formed on the inner wall of the reaction chamber. If the impurity films are stable films, the process production of the wafer is not greatly damaged, and only the etching gas or the etching liquid is used for periodic cleaning in a corrosion mode in the periodic maintenance operation of the equipment. However, the unstable thin film in the impurity thin film is likely to react with the reaction gas used in the process production process to generate a new impurity thin film in the process production process, or is cracked in the process production process to become a source of contamination of impurity particles on the wafer, which results in a decrease in product yield, so that it is necessary to frequently remove the unstable thin film on the inner wall of the reaction chamber. If the corrosive gas or the corrosive liquid is removed in a corrosive manner, the required cost is high, the operation is complex, the consumed time is long, the output rate of equipment is seriously influenced, the more potential danger is that the corrosive gas or the corrosive liquid has great harm to human bodies and the environment, and once the corrosive gas or the corrosive liquid leaks, the great production accidents and the personnel damage are caused. Therefore, in order to minimize the risk, semiconductor manufacturers are trying to minimize the work of removing the impurity film by etching. Generally, after a batch of wafers is processed, the reaction chamber is simply purged with nitrogen or inert gas. However, this cleaning method can only remove residual gas and particles in the reaction chamber, and has no cleaning effect on unstable impurity films.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, it is an object of the present invention to provide a method for cleaning a semiconductor device, which can solve the problem of the prior art that the unstable thin film remained on the inner wall of the reaction chamber of the semiconductor device can not be effectively removed when performing the conventional cleaning between product batches.
In order to achieve the above and other related objects, the present invention provides a method for cleaning a semiconductor device, the semiconductor device including a reaction chamber having a thin film deposited on an inner wall thereof, the method comprising:
1) rapidly cooling the temperature in the reaction chamber from a first preset temperature to a second preset temperature at a preset first cooling rate; and a process for the preparation of a coating,
2) rapidly cooling the temperature in the reaction chamber from a second preset temperature to a third preset temperature at a preset second cooling rate; in the two rapid cooling processes, the film deposited on the inner wall of the reaction chamber is cracked and peeled off under the action of thermal stress;
introducing cleaning gas into the reaction chamber for cleaning while rapidly cooling so as to discharge the peeled film out of the reaction chamber; and the temperature in the reaction chamber is introduced into the process of rapidly reducing the temperature to the second preset temperature at the preset first temperature reduction rate from the first preset temperature, and the flow of the cleaning gas is smaller than the flow of the cleaning gas introduced into the process of rapidly reducing the temperature in the reaction chamber to the third preset temperature at the preset second temperature reduction rate from the second preset temperature.
As a preferable aspect of the present invention, the first temperature decrease rate is the same as the second temperature decrease rate.
As a preferable aspect of the present invention, the first temperature decrease rate is different from the second temperature decrease rate.
As a preferable scheme of the present invention, the first cooling rate is greater than 10 ℃/min; the second cooling rate is greater than 10 ℃/minute.
As a preferred scheme of the present invention, the first preset temperature in the reaction chamber is 500 to 1000 ℃; the difference between the second preset temperature and the first preset temperature is 100-150 ℃; the difference between the third preset temperature and the first preset temperature is 200-250 ℃.
As a preferable scheme of the present invention, in step 3), the temperature is rapidly reduced, and simultaneously, the pressure in the reaction chamber is adjusted to be lower than a preset pressure for periodic oscillation change, and a cleaning gas is introduced into the reaction chamber under the pressure condition for cleaning.
As a preferable aspect of the present invention, the preset pressure is less than or equal to 10 mtorr; the number of cycles of pressure oscillation change in the reaction chamber is 2-32 cycles; the time required for each change period is 40 seconds to 110 seconds.
As a preferred scheme of the present invention, the film deposited on the inner wall of the reaction chamber is a polysilicon film or a nitride film; the purge gas is nitrogen.
The invention also provides a semiconductor process method, which comprises the following steps:
1) performing a batch product process and removing the batch of products from the reaction chamber after the batch product process is completed;
2) cleaning the interior of the reaction chamber by using the cleaning method in any scheme;
3) after the cleaning is finished, raising the temperature in the reaction chamber to a standby temperature, and restoring the pressure in the reaction chamber to the standard atmospheric pressure; and the number of the first and second groups,
4) and raising the temperature in the reaction chamber to the reaction temperature, vacuumizing the reaction chamber, and performing a product manufacturing process of another batch.
As a preferable embodiment of the present invention, the step 4) further comprises repeating the steps 1) to 4) at least once.
As a preferred aspect of the present invention, during the cleaning process of the inside of the reaction chamber in the step 2), the batch of products removed from the reaction chamber is simultaneously subjected to wafer cooling and wafer discharging.
As described above, the semiconductor device cleaning method of the present invention has the following advantageous effects: the cleaning method of the semiconductor equipment provided by the invention has the advantages that the unstable film on the inner wall of the reaction chamber is cracked under the action of thermal stress through rapid cooling; and the film impurities after cracking and the original gas and impurity particles remained in the reaction chamber are discharged out of the reaction chamber by introducing cleaning gas in the rapid cooling process, so that the cleanliness of the reaction chamber is improved, and the purpose of effectively improving the yield of products is achieved. The cleaning method is simple to operate and low in cost, and is carried out during the conventional cleaning period among product batches, so that the production time is not additionally occupied, and the output capacity of equipment is not affected.
Drawings
Fig. 1 is a flowchart illustrating a method for cleaning a semiconductor device according to a first embodiment of the invention.
FIG. 2 is a SEM scanning electron microscope of the inner wall of the reaction chamber of the semiconductor device after wafer processing.
Fig. 3 is an SEM scanning electron microscope image of the inner wall of the reaction chamber after the two-step rapid cooling step of the semiconductor device cleaning method according to the first embodiment of the present invention is performed.
Fig. 4 is an SEM image of the inner wall of the reaction chamber after the semiconductor device cleaning method according to the first embodiment of the present invention is performed.
Fig. 5 is a schematic diagram illustrating temperature variation in the implementation process of the first embodiment of the invention.
Fig. 6 is a schematic diagram of a semiconductor device embodying the present invention.
Fig. 7 is a schematic diagram illustrating temperature changes during the implementation of the second embodiment of the present invention.
Description of the element reference numerals
11 reaction chamber
12 quick cooling device
13 heating device
14 reaction chamber shutter
15 load-lock chamber
S11-S12 steps 1) -2)
Detailed Description
The following description of the embodiments of the present invention is provided by way of specific examples, and other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure herein. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 7. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and although the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation, the form, quantity and proportion of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
Example one
As shown in fig. 1-6. The invention provides a semiconductor equipment cleaning method, which at least comprises the following steps:
step S11, rapidly cooling the temperature in the reaction chamber 11 from the first preset temperature to a second preset temperature at a preset first cooling rate;
step S12, rapidly cooling the temperature in the reaction chamber 11 from a second preset temperature to a third preset temperature at a preset second cooling rate; in the rapid cooling processes of steps S11 and S12, the thin film deposited on the inner wall of the reaction chamber 11 is cracked and peeled off under the action of thermal stress; introducing cleaning gas into the reaction chamber 11 for cleaning while rapidly cooling so as to discharge the peeled film out of the reaction chamber 11; the temperature in the reaction chamber 11 is rapidly cooled to the second preset temperature from the first preset temperature at the preset first cooling rate, and the flow of the cleaning gas is smaller than the flow of the cleaning gas introduced to the reaction chamber 11 from the second preset temperature at the preset second cooling rate at the third preset temperature.
By way of example, the reaction chamber 11 is generally a high temperature reaction chamber, preferably, the reaction chamber 11 is a reaction chamber which is just finished with the production of the process and unloaded the wafer, and more preferably, the reaction chamber 11 is a reaction chamber which is just finished with the production of the high temperature polysilicon deposition or the high temperature nitride deposition process.
It should be noted that, a stable film and an unstable film are deposited on the inner wall of the reaction chamber 11, wherein the unstable film may include but is not limited to a polysilicon film or a nitride film, and the unstable film starts to crack due to the action of thermal stress during the rapid cooling process, so the present invention is directed to a method for cleaning an unstable film, and for convenience of description, the unstable film is hereinafter simply referred to as a film. After the wafer process is performed, the conditions on the inner wall of the reaction chamber 11 of the semiconductor device shown in fig. 6 are shown in the SEM electron microscope of fig. 2.
As an example, the rapid cooling operation is performed by a rapid cooling unit 12(RCU) located outside the reaction chamber 11, and the rapid cooling unit 12 may be a cooling unit including a cooling water pipe or a cooling unit including a condensed gas pipe.
As an example, the first preset temperature may be set according to different processes, preferably, the first preset temperature may be, but is not limited to, a process standby temperature of the semiconductor production equipment, and more preferably, in this embodiment, the first preset temperature is 500 ℃ to 1000 ℃.
It should be noted that the purpose of setting the second preset temperature is to facilitate better management and control of the whole cleaning process, and whether the temperature reduction rate and/or the flow rate of the introduced cleaning gas is necessary to be adjusted is determined according to the cracking condition and the cleaning effect of the thin film in the temperature reduction process from the first preset temperature to the second preset temperature, so that the second preset temperature may be set according to different processes, preferably, in this embodiment, the difference between the second preset temperature and the first preset temperature is 100-150 ℃.
After the rapid cooling operation, the film on the inner wall of the reaction chamber 11 is cracked under the action of thermal stress, and the condition of the inner wall of the reaction chamber 11 after the film is cracked is shown in an SEM (scanning electron microscope) image of fig. 3.
It should be noted that the temperature difference between the third preset temperature and the first preset temperature cannot be too small, otherwise the film is not cracked sufficiently, the cleaning effect is not good, but cannot be too large, otherwise the temperature difference is too large, which may damage the equipment, and the subsequent process production is affected due to too long temperature rise time after the cleaning process is finished. As an example, the third predetermined temperature is different from the first predetermined temperature by 200 ℃ to 250 ℃.
It should also be noted that the first temperature reduction rate and the second temperature reduction rate cannot be too small, otherwise the film is not cracked sufficiently, the cleaning effect is not good, but cannot be too large, otherwise too large a temperature reduction rate may cause damage to the equipment. As an example, the first temperature-reducing rate and the second temperature-reducing rate may be the same, preferably, in this embodiment, both the first temperature-reducing rate and the second temperature-reducing rate are greater than 10 ℃/minute, and more preferably, in this embodiment, both the first temperature-reducing rate and the second temperature-reducing rate are 15 ℃/minute.
In other examples, the first and second ramp rates may be different.
For example, in the steps S11 and S12, the temperature is rapidly decreased, and the pressure in the reaction chamber 11 is adjusted to be lower than the preset pressure and periodically oscillated, and a cleaning gas is introduced into the reaction chamber 11 under the preset pressure to clean the interior of the reaction chamber. The purpose of adjusting the pressure in the reaction chamber 11 to be below the preset pressure and periodically oscillating is to form turbulent flow in the reaction chamber 11 due to unstable airflow in the reaction chamber 11, so that particles and cracked films in the reaction chamber 11 are lifted, and are more easily carried out of the reaction chamber 11 by the cleaning gas, thereby cleaning more thoroughly.
As an example, the preset pressure is less than or equal to 10 mtorr; the number of cycles of pressure oscillation change in the reaction chamber 11 is 2-32 cycles; the time required for each change period is 40 seconds to 110 seconds.
For example, the pressure in the reaction chamber 11 may be adjusted by using a vacuum pump (not shown) provided in the apparatus, by adjusting the pumping speed of the vacuum pump, or by adjusting the flow rate of the gas introduced into the reaction chamber 11, or by synchronizing the two methods.
As an example, the purge gas is nitrogen, and in other examples, the purge gas may be an inert gas.
As an example, the purge gas flow may be set according to needs, for example, 20 to 50slm, and in other examples, the purge gas flow may be greater than 50 slm.
It should be noted that, in order to save the usage amount of the cleaning gas, in this embodiment, the flow rate of the cleaning gas introduced into the process of rapidly cooling the temperature in the reaction chamber 11 from the first preset temperature to the second preset temperature at the preset first cooling rate is smaller than the flow rate of the cleaning gas introduced into the process of rapidly cooling the temperature in the reaction chamber 11 from the second preset temperature to the third preset temperature at the preset second cooling rate, for example, the flow rate of the cleaning gas introduced into the process of rapidly cooling the temperature in the reaction chamber 11 from the first preset temperature to the second preset temperature at the preset first cooling rate is 20slm, the flow rate of the cleaning gas introduced into the process of rapidly cooling the temperature in the reaction chamber 11 from the second preset temperature to the third preset temperature at the preset second cooling rate is 50slm, in other examples, the present invention may be additionally provided, and is not limited herein.
The condition of the inner wall of the reaction chamber 11 after the cleaning is finished is shown in an SEM (scanning electron microscope) image of fig. 4, and it can be seen that the cleaning method can effectively improve the cleanliness of the inner wall of the reaction chamber 11, so that the yield of products in the process production process is improved.
After the cleaning process is completed, if necessary, a step of performing a high-pressure deionized water rinse to the inside of the reaction chamber 11 may be added, and a drying operation is usually performed after the high-pressure deionized water rinse.
In the case that the initial temperature in the reaction chamber 11 is lower than the first predetermined temperature, if necessary, the temperature inside the reaction chamber 11 may be raised first, and the temperature raising operation may be performed by using a heater 13 provided in the semiconductor device and located on the outer wall of the reaction chamber 11, may be performed by using an external heating device, or may be performed simultaneously, and is not limited herein. After the initial temperature inside the reaction chamber 11 is raised to the first preset temperature and stabilized for 2-5 minutes, the cleaning operation according to the cleaning method can be started. In this embodiment, a schematic diagram of temperature change in the reaction chamber 11 is shown in fig. 5, and it should be noted that the schematic diagram of temperature change is only to illustrate a trend of temperature change in the reaction chamber 11 during the cleaning process, and no specific temperature limitation is made, so specific temperature values and time values are not labeled.
Example two
Referring to fig. 6 and 7, the present invention further provides a semiconductor process method, which includes the following steps:
1) performing a batch product process and removing the batch of products from the reaction chamber after the batch product process is completed;
2) cleaning the interior of the reaction chamber by using the cleaning method described in the first embodiment;
3) after the cleaning is finished, raising the temperature in the reaction chamber to a standby temperature, and restoring the pressure in the reaction chamber to the standard atmospheric pressure; and the number of the first and second groups,
4) and raising the temperature in the reaction chamber to the reaction temperature, vacuumizing the reaction chamber, and performing a product manufacturing process of another batch.
Referring to fig. 6, a batch of products (not shown) is processed in the reaction chamber 11, after the batch of products is processed, the reaction chamber shutter 14 at the lower end of the reaction chamber 11 is opened, the batch of products is transferred to the load-lock chamber 15 at the lower end of the reaction chamber 11, and after the batch of products is completely transferred, the reaction chamber shutter 14 is closed.
It should be noted that, during the process of transferring the batch of products to the load-lock chamber 15, the reaction chamber shutter 14 is always in the open state, so the temperature in the reaction chamber 11 will be decreased from the process production temperature immediately after the process production is finished, and the specific time and specific number of times of the decrease are different according to the equipment and the number of the batch of products, for example, if the number of the batch of products is not large, the time for transferring the batch of products from the reaction chamber 11 to the load-lock chamber 15 is short, and the temperature in the reaction chamber 11 is not lower than the first preset temperature after the temperature is decreased, the interior of the reaction chamber 11 can be directly cleaned, and the specific cleaning steps refer to the description in the first embodiment and will not be described herein; if the transfer time is too long due to too many batches of products, and the temperature in the reaction chamber 11 drops too much during the process, the temperature inside the reaction chamber 11 needs to be raised first, and the temperature is lowered and cleaned after the temperature is raised to the preset first temperature and stabilized. It should also be noted that the temperature raising operation may be performed by using the heater 13 on the outer wall of the reaction chamber 11, which is provided in the semiconductor device, or by using an external heating device, or both, and the purge gas may be continuously introduced during the temperature raising process as needed, which is not limited herein.
After the cleaning is finished, raising the temperature in the reaction chamber 11 to a standby temperature, and restoring the pressure in the reaction chamber 11 to the standard atmospheric pressure; and raising the temperature in the reaction chamber 11 to a reaction temperature, and performing a product manufacturing process of another batch after the reaction chamber 11 is vacuumized.
As an example, the step 4) further includes a step of repeating the steps 1) to 4) at least once. The number of times of repeating the steps 1) to 4) may be set as required, and may be one, two, or more.
As an example, during the cleaning process of the inside of the reaction chamber 11 in the step 2), the batch of products removed from the reaction chamber 11 is simultaneously subjected to wafer cooling and wafer discharging.
As an example, the temperature profile of the reaction chamber 11 in this embodiment is shown in fig. 7, and the temperature of the reaction chamber 11 is at a standby temperature (not shown) before a batch product process is performed; during the batch manufacturing process, the temperature inside the reaction chamber 11 is raised to the process production temperature; after the batch product manufacturing process is completed, the temperature in the reaction chamber 11 is decreased from the process production temperature until the cleaning operation is started, the temperature in the reaction chamber 11 is adjusted to the first preset temperature, is rapidly decreased to the second preset temperature, and is finally decreased to the third preset temperature to complete the cleaning; after the cleaning process is completed, the temperature in the reaction chamber 11 is raised to the standby temperature. It should be noted that the temperature variation diagram is only for illustrating the temperature variation trend inside the reaction chamber 11 during the cleaning process and is not limited to a specific temperature, and therefore, specific temperature values and time values are not labeled.
It should also be noted that, if necessary, a step of performing a deionized water high-pressure rinse on the inside of the reaction chamber 11 may be added after the step 2), and a drying operation is usually performed after the deionized water high-pressure rinse.
As an example, the process may be any thin film deposition process, specifically, in the present embodiment, the process is a high temperature deposition process, and more specifically, in the present embodiment, the process is a high temperature polysilicon deposition process or a high temperature nitride deposition process.
In summary, the present invention provides a semiconductor device cleaning method and a semiconductor process method thereof, wherein the cleaning method at least comprises the following steps: 1) rapidly cooling the temperature in the reaction chamber from a first preset temperature to a second preset temperature at a preset first cooling rate; 2) rapidly cooling the temperature in the reaction chamber from a second preset temperature to a third preset temperature at a preset second cooling rate; in the two rapid cooling processes, the film deposited on the inner wall of the reaction chamber is cracked and peeled off under the action of thermal stress; introducing cleaning gas into the reaction chamber for cleaning while rapidly cooling so as to discharge the peeled film out of the reaction chamber; and the temperature in the reaction chamber is introduced into the process of rapidly reducing the temperature to the second preset temperature at the preset first temperature reduction rate from the first preset temperature, and the flow of the cleaning gas is smaller than that introduced into the process of rapidly reducing the temperature to the third preset temperature at the preset second temperature reduction rate from the second preset temperature. The film on the inner wall of the reaction chamber is cracked under the action of thermal stress through rapid cooling; and cleaning gas is introduced in the rapid cooling process to discharge the cracked film impurities, the original gas and impurity particles remained in the reaction chamber out of the reaction chamber, so that the cleanliness of the reaction chamber is improved, and the purpose of effectively improving the yield of products is achieved. The method is simple to operate and low in cost, and is carried out during the conventional cleaning period among product batches, so that the production time is not additionally occupied, and the output capacity of equipment is not affected. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (10)
1. A cleaning method for semiconductor equipment, the semiconductor equipment comprises a reaction chamber, and a film is deposited on the inner wall of the reaction chamber, and the cleaning method is characterized by at least comprising the following steps:
1) rapidly cooling the temperature in the reaction chamber from a first preset temperature to a second preset temperature at a preset first cooling rate; and
2) rapidly cooling the temperature in the reaction chamber from a second preset temperature to a third preset temperature at a preset second cooling rate; in the rapid cooling process of the steps 1) and 2), the film deposited on the inner wall of the reaction chamber is cracked and peeled off under the action of thermal stress;
adjusting the pressure in the reaction chamber to be below a preset pressure during rapid cooling, periodically oscillating and changing, and introducing cleaning gas into the reaction chamber under the preset pressure for cleaning so as to discharge the peeled film out of the reaction chamber; and the temperature in the reaction chamber is introduced into the process of rapidly reducing the temperature to the second preset temperature at the preset first temperature reduction rate from the first preset temperature, and the flow of the cleaning gas is smaller than the flow of the cleaning gas introduced into the process of rapidly reducing the temperature in the reaction chamber to the third preset temperature at the preset second temperature reduction rate from the second preset temperature.
2. The semiconductor apparatus cleaning method according to claim 1, characterized in that: the first cooling rate is the same as the second cooling rate.
3. The semiconductor apparatus cleaning method according to claim 1, characterized in that: the first cooling rate is different from the second cooling rate.
4. The semiconductor apparatus cleaning method according to claim 1, characterized in that: the first cooling rate is more than 10 ℃/min; the second cooling rate is greater than 10 ℃/minute.
5. The semiconductor apparatus cleaning method according to claim 1, characterized in that: the first preset temperature in the reaction chamber is 500-1000 ℃; the difference between the second preset temperature and the first preset temperature is 100-150 ℃; the difference between the third preset temperature and the first preset temperature is 200-250 ℃.
6. The semiconductor apparatus cleaning method according to claim 1, characterized in that: the preset pressure is less than or equal to 10 mTorr; the number of cycles of pressure oscillation change in the reaction chamber is 2-32 cycles; the time required for each change period is 40 seconds to 110 seconds.
7. The semiconductor apparatus cleaning method according to any one of claims 1 to 6, characterized in that: the film deposited on the inner wall of the reaction chamber is a polycrystalline silicon film or a nitride film; the purge gas is nitrogen.
8. A semiconductor processing method is characterized by comprising the following steps:
1) performing a batch product process and removing the batch of products from the reaction chamber after the batch product process is completed;
2) cleaning the interior of the reaction chamber using the cleaning method of claim 1;
3) after the cleaning is finished, raising the temperature in the reaction chamber to a standby temperature, and restoring the pressure in the reaction chamber to the standard atmospheric pressure; and the number of the first and second groups,
4) and raising the temperature in the reaction chamber to the reaction temperature, vacuumizing the reaction chamber, and performing a product manufacturing process of another batch.
9. The semiconductor processing method according to claim 8, further comprising the step of repeating steps 1) to 4) at least once after step 4).
10. The semiconductor processing method according to claim 8 or 9, wherein: during the process of cleaning the inside of the reaction chamber in the step 2), simultaneously carrying out wafer cooling and wafer discharging on the batch of products moved out of the reaction chamber.
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| CN113838733A (en) * | 2020-06-23 | 2021-12-24 | 拓荆科技股份有限公司 | Method for improving environment in clean chamber |
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| EP1235258A1 (en) * | 1999-10-29 | 2002-08-28 | Matsushita Electric Industrial Co., Ltd. | Method for cleaning substrate and method for manufacturing semiconductor device |
| JP2003332240A (en) * | 2002-05-10 | 2003-11-21 | Yamato Handotai Kk | Gas cleaning method for deposited-silicon film forming device |
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