JP2003133284A - Batch type vacuum treatment equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide batch type vacuum treatment equipment by which surface treatment for removing a natural oxide film of a wafer or the like can be effectively performed by remote plasma treatment, wafer yield can be improved and the load of equipment can be reduced. SOLUTION: In a pair of chambers of the batch type vacuum treatment equipment 11, which comprises a pair of chambers that are vertically constituted so as to communicate with each other in an up and down direction, an upper chamber is used as a heating chamber 13 and a lower chamber is used as a treatment chamber 12. By using the equipment 11, the wafer 5 in the treatment chamber 12 is subjected to remote plasma treatment in a batch unit by using hydrogen radicals generated by a plasma generating part 15 and a natural oxide film is removed. Further, the wafer 5 in a batch unit is transferred to the heating chamber 13 and subjected to heat treatment and thus the ammonia complex to be a by-product of the wafers 5 is removed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum processing apparatus used for removing a thin film formed on a semiconductor wafer, for example.

[0002]

2. Description of the Related Art In manufacturing a semiconductor element, various film forming processes such as ion implantation and wiring are performed on a substrate such as a semiconductor wafer. At this time, a natural oxide film made of silicon is formed on the wafer before the film formation process due to the ambient atmosphere.
It is easily formed with a very thin film thickness of about 20Å, which causes various problems. That is, the presence of a natural oxide film between a metal wiring material to be directly wired on a wafer and a wafer processed as a p-type or n-type semiconductor causes a contact resistance, and a wafer made of single crystal silicon. When a thin film is formed on the wafer by epitaxial growth, if a natural oxide film is present between the thin film and the wafer, the thin film that should be formed of a single crystal is polycrystallized, which becomes an impediment factor for epitaxial growth. If a natural oxide film is formed on the wafer when forming a gate oxide film to be formed with a thin film thickness (about 50 Å), it will be extremely difficult to control the film thickness of the thin film that functions as the gate oxide film.

Therefore, in order to remove the natural oxide film from the wafer before the film forming process, conventionally, a so-called wet process has been performed in which a cleaning process using a chemical solution such as dilute hydrofluoric acid and a drying process are repeated. However, when such a wet process is used, it is difficult to allow the chemical solution to reach and circulate the natural oxide film formed at the bottom of the wiring contact hole, which requires a design rule of 0.1 μm or less. In particular, in recent years, it is no longer useful as a natural oxide film removal method.

Therefore, as a method for surely removing the natural oxide film on the wafer, a dry treatment such as hydrogen reduction or hydrogen plasma can be considered, but the former hydrogen reduction method is 80.
A high temperature of 0 ° C or higher is required, which is not practical. In the latter case, the temperature condition for plasma etching the wafer using hydrogen plasma to process the native oxide film on the wafer is about 450 ° C., but plasma damage occurs in the wafer, and thinning has progressed. The element is required to have a lower temperature, and it is desirable to remove the natural oxide film at 400 ° C. or lower, and this also has a problem.

Therefore, there has been proposed a natural oxide film removal method by a dry processing method using hydrogen radicals under a relatively low temperature processing condition. This is a mixture of N ₂ gas, NH ₃ gas and N
One using F ₃ gas is considered. In this one,
A microwave is applied to a mixed gas of N ₂ gas and NH ₃ gas to generate hydrogen radicals (H ^* ), and this is reacted with NF ₃ gas to generate ammonia fluoride gas, and then this ammonia The fluoride gas etches SiO ₂ forming the native oxide film. Also, an ammonia complex, which is a by-product, is produced, and this ammonia complex is thermally decomposed at 100 to 200 ° C. That is, H ^* + NF ₃ → NHxFy (NHxFy etches a natural oxide film) NHxFy + SiO ₂ → (NH ₄ ) ₂ SiF ₆ + H ₂ O ↑
As a by-product, an ammonia complex ((NH ₄ ) ₂ SiF ₆ ) which is considered to be produced by a reaction between an ammonia fluoride (NHxFy) and a natural oxide film (SiO ₂ ) has a high vapor pressure as follows. It decomposes into gas and evaporates. (NH ₄ ) ₂ SiF ₆ → NH ₃ ↑ + HF ↑ + SiF ₄ ↑ At this time, the temperature required to remove the natural oxide film is 10
It is about 0 to 200 ° C., which is within the temperature constraint condition of the wafer.

The wafer thus completed with the natural oxide film removal process is suitable as a hydrogen-terminated silicon wafer for the subsequent film formation process.

[0007]

By the way, as an apparatus for removing a natural oxide film on a wafer by using this type of remote plasma processing method, there is conventionally known Japanese Patent Laid-Open No. 10-33531.
The one shown in Japanese Patent No. 6 is known. FIG. 1 is a sectional view of the main part of this product. The N ₂ gas and the H ₂ gas are introduced into the plasma generator 1 to generate hydrogen radicals (H ^* ) and introduced into the processing device 2, and then the hydrogen radicals and NF
NHxFy, which is thought to be formed by the reaction with ₃ gases
Gas is blown onto the wafer 5 placed on the heating table 3 via the substrate holder 4 to remove the natural oxide film of the wafer 5 from NHxFy.
Etching with gas. After that, the temperature of the wafer 5 is raised by the heating table 3 to remove the by-product ammonia complex. However, since this is a single-wafer type, it takes about 3 times per substrate in a series of steps (preparation → etching → heating → extraction) required for removing the natural oxide film.
It takes time and is not practical as a pretreatment process for film formation.

Therefore, it is conceivable to use a batch type processing apparatus in place of the above-mentioned single wafer processing apparatus. FIG. 2 shows a sectional view of the main part of such a batch type processing apparatus. This device 6
Then, about 50 wafers are set as one batch, the wafer batch 7 is attached to the wafer support base 8, and N wafers are fed from the outside of the apparatus 6.
₂ gas and NH ₃ gas are introduced into the plasma generator 9 to generate hydrogen radicals (H ^* ), and then NF ₃ is introduced on the flow of hydrogen radicals, whereby the reaction between the hydrogen radicals and NF ₃ gas NHxFy gas, which is considered to be generated, is blown onto the wafer batch 7 to etch the native oxide film on the wafer. Then, after that, the temperature of the wafer is raised by the heating source 10 provided outside the apparatus 6 to perform the ammonia complex removal processing. In this case, the heating source 10 is provided outside the device 6, but it may be provided inside the device 6.

In such a batch type processing apparatus, the number of wafers to be processed at one time increases, but after the etching reaction of the natural oxide film on the wafer is carried out at about 25 ° C., the by-product ammonia complex is evaporated. Therefore, it takes time to heat the entire device 6 to about 150 ° C. by the heating source 10. That is, the etching reaction of the natural oxide film on the wafer is a so-called dry etching process. Generally, the lower the temperature of the etching process is, the higher the etching efficiency is. Therefore, it is necessary to maintain the temperature at about 25 ° C. to carry out the reaction. Then, the heating process is performed. Further, in order to take out the wafer batch 7, it is necessary to cool it to room temperature, and if the waiting time is included, the time required for the series of steps of the above natural oxide film removal process is about 200 minutes, which is still inefficient. For this reason, a quick cooling mechanism may be provided, but the device 6 is often made of a corrosion-resistant metal such as aluminum. By repeating rapid cooling for such a metal device, it is possible to protect the metal. It is feared that particles may be generated due to the repeated stress of compression and expansion, and the yield of treated substrates may be deteriorated and the useful life of the device may be adversely affected.

In view of the above problems, the present invention can efficiently perform surface treatment such as removal of a natural oxide film on a wafer by using plasma treatment such as a remote plasma treatment process and can reduce the load on the apparatus. An object is to provide a batch type vacuum processing device.

[0011]

In order to solve the above problems, the present invention performs a batch process on one or more substrates, and therefore a pair of chambers vertically arranged so that they can communicate in the vertical direction. The device is equipped with. As a specific example of using the apparatus having such a configuration, for the purpose of performing a surface treatment process involving a heating step as described above, one chamber above the pair of chambers is used as a heating chamber, and one below the chamber. The other chamber located can be used as the process chamber. Such a vertical type device can occupy a smaller area than other types such as a horizontal type device and can have a compact structure. Furthermore, by arranging a heating chamber on top, high temperature control is required. Temperature control between a simple heating chamber and a process chamber that does not require it.

In this case, if a cooling mechanism is provided between the heating chamber and the process chamber to insulate the heating chamber and the process chamber from each other, the temperature between the chambers can be controlled more reliably. You can

Further, in this case, the process chamber is used to perform plasma surface treatment on the substrate arranged in the process chamber, that is, by introducing hydrogen radicals and NF ₃ gas into the process chamber as described above, The natural oxide film on the substrate is subjected to an etching reaction, and then the substrate having the ammonia complex, which is a by-product, is transferred to the heating chamber, and surface treatment such as heat treatment to remove the ammonia complex on the substrate can be performed. it can.

Further, when plasma surface treatment is performed on such a substrate, if hydrogen radicals are used as active species generated from a plasma generation source provided outside the above-mentioned pair of chambers, remote plasma surface treatment of the substrate is performed. Surface treatment such as removal of the natural oxide film can be performed. Remote plasma treatment is useful in protecting the substrate because it does not require direct exposure of the substrate to plasma.

In order to perform such remote plasma surface treatment, a gas inlet and a gas outlet are provided in the process chamber, and the central axis of the gas inlet and the central axis of the gas outlet are arranged on the same straight line. If the process chamber is configured as described above, in the batch processing in which a plurality of substrates are simultaneously provided, the reactive gas as described above can uniformly contact each of the substrates as an air flow, so that each substrate can be reliably processed even in the batch method. Is possible.

Furthermore, when performing plasma surface treatment or the like on the substrate, if the substrate is operated so as to swing in the vertical direction and rotate on a horizontal plane, the uniformity of the surface treatment on each of the above-mentioned substrates is improved. Further, the efficiency of batch processing is improved.

For example, when performing a process of removing a natural oxide film formed on a wafer, a plasma surface treatment process for the wafer is performed by using a process chamber and a subsequent heating process while maintaining a vacuum. It can be reliably performed in a batch system.

If the heating chamber is provided with an external heater provided outside the chamber and a lamp heater provided inside the chamber as an auxiliary heat source, the heating chamber is previously kept at a desired temperature by the external heater. In this case, it is possible to recover early the temperature drop of the heating chamber when the substrate is subsequently transferred from the process chamber by operating the lamp heater,
In this way, the surface treatment such as the removal of the ammonia complex of the wafer can be efficiently performed.

Further, at least two or more fixed chambers located on the upper side and one chamber movable on the lower side in the horizontal direction are provided, and the lower chamber is transferred on the horizontal direction. If the apparatus is configured such that each of the upper chamber and the lower chamber can communicate with each other in the vertical direction when the upper chamber and the lower chamber face each other in the vertical direction, for example, as described above, To
The surface where the natural oxide film of the wafer is etched in the lower chamber and then transferred to the upper chamber to perform a heating process to decompose the ammonia complex by heat to remove the natural oxide film of the wafer. Immediately after performing the surface treatment as described above, these wafers and the like can be transferred to another chamber located on the upper side while maintaining the vacuum state during the surface treatment.

If such another upper chamber is used as a film forming chamber, a desired film can be efficiently formed on a wafer or the like while maintaining a vacuum state during surface treatment. . An epitaxial film forming apparatus, which can be used for such a film forming chamber,
Examples include an annealing treatment device, a plasma reforming device, a CVD device, an oxidation treatment device, and the like. Needless to say, the substrate is not limited to a silicon wafer and can be a glass substrate or the like.

[0021]

FIG. 3 is a sectional view of a first embodiment of the batch type vacuum processing apparatus of the present invention. This processing device 1
1 is a process for removing the native oxide film on the wafer 5 in batch units of about 50 wafers. The plasma generation is performed by connecting the process chamber 12, the heating chamber 13, and the process chamber 12 via the reaction gas introducing pipe 14. And part 15.

Process chamber 12 and reaction gas introduction pipe 1
4 is connected via a gas inlet 16 and the gas outlet 17 is provided so that the central axis of the gas outlet 17 is located on an extension of the central axis of the gas inlet 16. Is connected via a gas discharge port 17 to a gas discharge pipe 18 which is selectively connected to a mechanical booster pump and a dry pump (not shown). Further, in the process chamber 12, there is provided an elevating table 20 which can be moved up and down via a rod 19 which can be expanded and contracted in the vertical direction.
A wafer support base 8 that can be stored in units of up to 100 wafers is mounted via a rotation mechanism 21 for the wafer support base 8.
Then, the wafers 5 in batch units are stored in the wafer support base 8 or taken out from the wafer support base 8 as a wafer batch 7 via a purchase / eject port not shown. Further, below the process chamber 12, a cooling blower pipe 22 communicating with the outside of the process chamber 12 is provided. Further, a pipe (not shown) is wound around the lower portion of the process chamber 12, and cooling water and heating oil are circulated in the pipe so that they can be selectively selected.

Located at the top of the process chamber 12,
The heating chamber 13 is attached via a gate valve 23. Outside the heating chamber 13, an external heating source 24 such as a resistance heating furnace or a mantle heater and a turbo molecular pump 25 are provided.
And are installed. In addition, an auxiliary heat source 26 such as a lamp heater and a thermocouple 27 for temperature monitoring are attached inside the heating chamber 13. Further, above the heating chamber 13, a purge gas introduction pipe 28 communicating with the outside of the heating chamber 13 is attached.

Process chamber 12 and heating chamber 13
A sluice valve 23 provided between the process chamber 12 and the sluice valve 23 is horizontally openable and closable.
When the wafer batch 7 supported by the wafer support 8 on the elevating table 20 is inserted into the heating chamber 13, the sluice valve 23 is opened. When the wafer batch 7 is lifted so as to be placed in the heating chamber 13, the upper ends of the lift table 20 and the upper sidewall of the process chamber 12 come into contact with each other, and the process chamber 12 and the heating chamber 13 are separated from each other. It In order to ensure this isolation, O-rings 20a are attached to both upper end portions of the lift table 20. Further, in order to ensure the heat insulating effect between the process chamber 12 and the heating chamber 13, a pipe (not shown) is wound around the connecting portion of both chambers, and cooling water can be circulated in the pipe. .

The plasma generating portion 15 connected from the outside in the lateral direction of the process chamber 12 through the reaction gas introducing pipe 14 introduces N ₂ gas and NH ₃ gas.
Introducing pipe 29 and second introducing pipe 30 for introducing NF ₃ gas
And a microwave plasma generator 31. In this configuration, it is desirable that the second introduction tube 30 and the microwave plasma generator 31 be separated from each other at the optimum position. When the NF ₃ gas introduced from the second introduction pipe 30 flows backward to reach the microwave plasma generator 31, and fluorine radicals are formed and flow into the process chamber 12, an undesirable side reaction is caused and the process chamber 12 is caused.
This is because the inner wafer 5 may be damaged.
A shower nozzle (not shown) is provided near the inlet 16 of the reaction gas inlet pipe 14 in the process chamber 12 so that the gas introduced from the plasma generator 15 is evenly diffused and faces the inlet 16. Each wafer 5 of the wafer batches 7 located in the same position is sprayed equally.

The process chamber 12 and the heating chamber 13 constituting the batch type vacuum processing apparatus 11 of FIG. 3 are made of aluminum in order to suppress the corrosion due to the halogen gas.

When performing the removal processing of the natural oxide film of each wafer 5 constituting the wafer batch 7 using the batch type vacuum processing apparatus of FIG. 3, first, the transfer machine is moved from the stocking port not shown. 5 to the wafer support 8 such as aluminum boat
Wafers 5 of 0 to 100 are stored. After closing the sluice valve 23 and the stock removal port, a mechanical booster pump and a dry pump (not shown) connected to the gas exhaust pipe 18 are operated to make the process chamber 12 reach about 130 Pa. Then, for the purpose of optimizing the etching rate in the process chamber 12, cooling water is caused to flow in a cooling pipe (not shown) connected to the process chamber 12 to maintain the temperature inside the process chamber 12 at about 25 ° C.

On the other hand, in parallel with the above operation, in the plasma generator 15, a mixed gas of N ₂ gas and NH ₃ gas is introduced from the first introduction pipe 29, and this mixed gas is plasma-generated by the microwave plasma generator 31. Excited to generate hydrogen radicals. Then, the NF introduced from the second introduction pipe 30
Ammonia fluoride gas is produced by reacting ₃ gas with this hydrogen radical. It is considered that these reactions are performed in the following process. H ^* + NF ₃ → NHxFy Next, this ammonia fluoride gas is added to the process chamber 1
Install in 2 The ammonia fluoride gas is evenly sprayed onto each wafer 5 forming the wafer batch 7 by an appropriate means such as the above-mentioned shower nozzle. And
At this time, the natural oxide film on each wafer 5 is etched by the etching reaction.

In order to ensure that the ammonia fluoride gas is uniformly sprayed onto each wafer 5, the wafer support base 8 in the process chamber 12 is rotated by a rotating mechanism 21 at 10 rpm around a rotation axis on a horizontal plane. And then
The rod 19 is swung in the vertical direction by the expansion and contraction operation.

In this state, ammonia fluoride is added for about 2 minutes.
Of the ammonia fluoride gas
Finish the installation. And the pressure of the process chamber 12
After restoring the condition to the original 130Pa, the sluice valve 2
3 is opened and rod 19 is extended to add wafer batch 7.
The wafer support 8 is integrally transferred to the heat chamber 13.
It When the wafer batch 7 is transferred, the heating chamber
13 was previously kept at 120 to 150 ° C,
When the wafer batch 7 is transferred,
Purge gas so that the residual gas in
From the introduction pipe 28 N ₂Introduce gas at an appropriate flow rate and heat
Downflow from the chamber 13 to the process chamber 12
To maintain. Furthermore, when the wafer batch 7 is transferred
In addition, the temperature inside the heating chamber 13 temporarily decreases.
Then, in order to reduce this, the auxiliary heat source 26 is operated.
The state of the batch type vacuum processing apparatus 11 at this time is shown in FIG.
That's right.

In this state, each wafer 5 of the wafer batch 7
Is heated for about 3 minutes to decompose and evaporate the ammonia complex on the wafer 5. Further, in order to reliably perform this decomposition and evaporation, the turbo molecular pump 25 is operated for about 5 minutes after the above heating. At this time, it is considered that the reactions in the following process are performed on each wafer 5. (NH ₄ ) ₂ SiF
₆ → NH ₃ ↑ + HF ↑ + SiF ₄ ↑ In this way, the ammonia complex on the wafer 5 produces highly volatile NH ₃ gas, HF gas, and SiF ₄ gas. Then, the vaporization of these gases brings the wafer 5 into a state of being terminated with hydrogen.

Then, the wafer batch 7 which has been processed in the heating chamber 13 is moved down into the process chamber 13 by compressing the rod 19, the sluice valve 23 is closed, and then cooling N ₂ gas is sprayed from the cooling gas introducing pipe 22. After cooling for about 5 minutes, it is transported to a stocking / unloading chamber (not shown), further taken out of the apparatus 11 and transported to the subsequent film forming process. In this way, the time required for removing the natural oxide film on the wafer is about 30 minutes or more as a whole.

Furthermore, FIG. 5 shows a second embodiment of the batch type vacuum processing apparatus of the present invention. Device 11 of Figures 3 and 4
The difference is that the process chamber 12 also functions as a load lock chamber, and that the heating chamber 1 is provided above the apparatus.
3 and the film forming chamber 32 are arranged side by side. By thus configuring the batch type vacuum processing apparatus, the surface treatment such as the natural oxide film removal processing is completed by using the process chamber 12 and the heating chamber 13 as in the first embodiment. The wafers 5 thus formed are integrated into the boat transfer mechanism 33 as the wafer batch 7 together with the lifting table 20.
Is transferred in the load lock chamber 12 and reaches immediately below the film forming chamber 32. Furthermore, the above-mentioned rod 19
The wafer 5 immediately after the completion of the surface treatment is transferred to the film forming chamber 32 as the wafer batch 7 by the elevating mechanism by the expansion and contraction of. Although details of the film forming chamber 32 are omitted, as in the case of the heating chamber 13, a closing system can be configured by the sluice valve 34, and the film forming process in the film forming chamber 32 is surely performed. I am able to do that.
Then, with such a configuration, the wafer 5 after the surface treatment is performed.
Can be transferred to the subsequent film forming process in batch units while maintaining the vacuum state during the surface treatment.

As an apparatus that can be used in the film forming chamber 32 in such a form, an epitaxial film forming apparatus,
Examples include an annealing treatment device, a plasma reforming device, a CVD device, an oxidation treatment device, and the like.

[0035]

EXAMPLE A batch type vacuum processing apparatus 1 shown in FIGS. 3 and 4.
1 using the method described in the first embodiment above.
The natural oxide film was removed. Processing conditions at this time
Is N as the flow rate of the introduced gas.₂1000 scc gas
m, NH₃100 sccm gas, NF₃Gas 100s
It is ccm. Also, due to the generation of hydrogen radicals, N₂gas
And NH₃The energy of the microwave applied to the gas is 1
000W, the pressure in the process chamber is about 530Pa
did. The processing time at this time and the natural oxide film (SiO 2 ₂) To
FIG. 6 shows the relationship with the etching amount (Å). Figure 6
Due to this, the natural acid on the wafer that is usually formed to about 10Å
The oxide film is etched by plasma surface treatment for 1 to 2 minutes
You can see that

Therefore, by performing the vacuum treatment including the subsequent heat treatment for about 2 minutes by the batch type vacuum treatment apparatus of FIGS. 3 and 4, the ammonia complex which is a by-product on the wafer is surely efficient. You can see that it can be removed well.

[0037]

As is apparent from the above description, when the apparatus of the present invention is used, the heating chamber and the process chamber which are vertically communicable can remove the natural oxide film from the wafer in batch units. Surface treatment such as treatment can be efficiently performed. Further, the apparatus of the present invention can suppress the temperature fluctuation in each chamber, and thus can reduce the load on the apparatus. Furthermore, by arranging a heating chamber and a film forming chamber side by side as the upper chamber of the apparatus of the present invention, surface processing such as removal processing of the natural oxide film on the wafer and subsequent film forming processing can be performed integrally. The film can be formed more efficiently.

[Brief description of drawings]

FIG. 1 is a sectional view of a main part of a conventional single-wafer type surface treatment apparatus.

FIG. 2 is a sectional view of a main part of a conventional batch type surface treatment apparatus.

FIG. 3 is a cross-sectional view of essential parts showing a first embodiment of the present invention when a wafer is located in a process chamber.

FIG. 4 is a cross-sectional view of essential parts showing a first embodiment of the present invention when a wafer is located in a heating chamber.

FIG. 5 is a cross-sectional view of an essential part showing a second embodiment of the present invention.

FIG. 6 is a graph showing an etching effect when the apparatus according to the first embodiment of the present invention is used.

[Explanation of symbols]

5 wafers 12 Process chamber (lower chamber) 13 Heating chamber (upper chamber) 16 gas inlet 17 gas outlet 24 External heating source 26 Auxiliary heat source 32 film forming chamber

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Toshio Hayashi             1220-1 Suyama, Susono City, Shizuoka Al             Back Semiconductor Technology Laboratory (72) Inventor Go Shimizu             1220-14 Suyama, Susono, Shizuoka Al             Back Fuji Susono Factory (72) Inventor Shinji Yanagisawa             1220-14 Suyama, Susono, Shizuoka Al             Back Fuji Susono Factory (72) Inventor Hiroyuki Tsuge             1220-14 Suyama, Susono, Shizuoka Al             Back Fuji Susono Factory (72) Inventor Shuzo Fujimura             2-4 Utase, Mihama-ku, Chiba-shi, Chiba Patio             Space 1-501 F-term (reference) 5F004 AA14 BA03 BB14 BB19 DA17                       DA25 DB03 FA01

Claims (10)

[Claims] 1. A batch type vacuum processing apparatus comprising a pair of vertical chambers which are vertically communicated with each other. 2. The batch according to claim 1, wherein, of the pair of chambers, one chamber located above is used as a heating chamber and the other chamber located below is used as a process chamber. Vacuum processing equipment. 3. The batch type vacuum processing according to claim 2, wherein a cooling mechanism is provided between the heating chamber and the process chamber to insulate the heating chamber and the process chamber from each other. apparatus. 4. The batch type vacuum processing apparatus according to claim 2, wherein the process chamber is used for plasma surface processing of a substrate in the chamber. 5. The plasma surface treatment performed on the substrate using the process chamber is a remote plasma surface treatment using active species generated from a plasma source provided outside the pair of chambers. The batch type vacuum processing apparatus according to claim 4. 6. A process chamber used for plasma surface treatment of the substrate is provided with a gas inlet and a gas outlet, and the central axis of the gas inlet and the central axis of the gas outlet are arranged on the same straight line. The batch type vacuum processing apparatus according to claim 4 or 5, wherein: 7. The method according to claim 4, wherein when the plasma surface treatment is performed on the substrate, the substrate is oscillated vertically and rotated on a horizontal plane. Batch type vacuum processing equipment. 8. The heating chamber comprises an external heater provided outside the chamber and a lamp heater provided inside the chamber as an auxiliary heat source.
8. The batch type vacuum processing apparatus according to any one of items 1 to 7. 9. At least two or more fixed chambers located on the upper side, and one chamber that can be moved in the horizontal direction located on the lower side, wherein the lower chamber is transferred in the horizontal direction. Batch chamber vacuum processing, wherein each chamber can be selectively opposed to any one of the chambers, and when the upper chamber and the lower chamber vertically face each other, the chambers communicate with each other in the vertical direction. apparatus. 10. The batch type vacuum processing apparatus according to claim 9, wherein any one of the upper chambers is used as a film forming processing chamber.