JP2010165954A - Vacuum processing apparatus and vacuum processing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To reliably remove oxygen in an interface of a silicon substrate in the same processing chamber after a native oxide layer is removed. <P>SOLUTION: NH<SB>3</SB>, N<SB>2</SB>and NF<SB>3</SB>are introduced and NHxFy is subjected to reaction on an oxidized surface of the silicone substrate 5 to generate (NH<SB>4</SB>)<SB>2</SB>SiF<SB>6</SB>, which is evaporated by controlling the silicon substrate 5 to prescribed temperature to remove the oxide film on a surface of the silicon substrate 5. Then NH<SB>3</SB>, N<SB>2</SB>and NF<SB>3</SB>are introduced and an F radical is subjected to reaction on the surface of the silicon substrate in a state in which the temperature is maintained to etch a silicon layer. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a vacuum processing apparatus and a vacuum processing method for performing processing, for example, etching, in a vacuum processing chamber.

In the process of manufacturing a semiconductor device, for example, it is necessary to remove a natural oxide film (for example, SiO ₂ ) formed on a wafer at the bottom of a contact hole of a semiconductor substrate (semiconductor wafer). Various techniques using radical hydrogen (H ^* ) and NF ₃ gas have been proposed as techniques for removing the natural oxide film (see, for example, Patent Document 1).

The technique disclosed in Patent Document 1 introduces a processing gas into a processing chamber in a predetermined vacuum state, and reacts with an oxidized surface (SiO ₂ ) of a silicon wafer placed in a predetermined vacuum atmosphere. The product (NH ₄ ) ₂ SiF ₆ is produced. Thereafter, the processing chamber is heated to control the silicon substrate to a predetermined temperature, thereby sublimating (NH ₄ ) ₂ SiF ₆ to remove (etch) the natural oxide film on the surface of the silicon substrate.

  In recent years, there is an increasing demand for the degree of cleanliness of the surface (single crystal silicon, polysilicon) of the silicon wafer from which the natural oxide film has been removed, and further purification of the silicon surface after the natural oxide film has been removed. Is required. It is conceivable that oxygen exists between the silicon lattices on the silicon surface at the interface with the natural oxide film, and oxygen may remain even after the natural oxide film is removed.

JP-A-2005-203404

  The present invention has been made in view of the above situation, and uses a processing apparatus for removing a natural oxide film, and a vacuum processing apparatus and a vacuum that can reliably remove oxygen on the surface of the substrate after the natural oxide film is removed. An object is to provide a processing method.

  In order to achieve the above object, a vacuum processing apparatus according to a first aspect of the present invention includes a processing chamber in which a substrate is disposed and the inside is set to a predetermined vacuum state, and a first processing gas or auxiliary processing gas in a radical state. First processing gas introduction means for introducing gas into the processing chamber, second processing gas introduction means for introducing into the processing chamber a second processing gas that reacts with the first processing gas or the auxiliary processing gas, and the processing chamber. Temperature control means for removing reaction products generated by reacting the first process gas, the second process gas, and the natural oxide film on the substrate surface by controlling the temperature to a predetermined temperature, and the first process The auxiliary processing gas introduced from the gas introducing means and the second processing gas introduced from the second processing gas introducing means are controlled to introduce a surface layer of the substrate from which the natural oxide film has been removed. Processing gas Characterized in that by the second processing gas and a control means for removing a predetermined thickness.

  In the present invention according to claim 1, after the natural oxide film on the substrate is removed, the auxiliary processing gas is introduced from both the first processing gas introduction means and the second processing gas introduction means by the control means, and the control means naturally The surface layer of the substrate after the oxide film is removed is removed from the auxiliary processing gas by a predetermined thickness. For this reason, the processing apparatus for removing the natural oxide film can be used to reliably remove oxygen on the surface of the substrate after the natural oxide film is removed.

  A vacuum processing apparatus according to a second aspect of the present invention is the vacuum processing apparatus according to the first aspect, wherein a plurality of the substrates are accommodated in the processing chamber, and the plurality of the substrates are It is characterized by being arranged in parallel with each other at a predetermined interval.

  In the present invention according to claim 2, it is possible to remove the natural oxide film and remove the surface layer of the substrate from which the natural oxide film has been removed by batch processing.

  A vacuum processing apparatus according to a third aspect of the present invention is the vacuum processing apparatus according to the first aspect, wherein a single substrate is accommodated in the processing chamber.

  In the present invention according to claim 3, it is possible to remove the natural oxide film by the single wafer processing and to remove the surface layer of the substrate from which the natural oxide film has been removed.

  The vacuum processing apparatus of the present invention according to claim 4 is the vacuum processing apparatus according to any one of claims 1 to 3, wherein the first processing gas is a gas that generates H radicals, The second processing gas is a gas that generates NHxFy and F radicals, and the substrate is a silicon substrate.

A vacuum processing apparatus of the present invention according to claim 5, the vacuum processing apparatus according to claim 4, wherein the first process gas is at least one of NH ₃ or N ₂ and N _2, the first 2 The processing gas is NF ₃ and the temperature control means is a temperature of the silicon substrate on which a reaction product generated by reacting the first processing gas, the second processing gas and a natural oxide film is formed. Is controlled to a predetermined temperature, and the reaction product is sublimated to remove the natural oxide film from the surface of the silicon substrate, and the control means applies the auxiliary treatment to the surface of the silicon substrate from which the natural oxide film has been removed. The silicon layer of the silicon substrate is removed to a predetermined thickness by causing F radicals to act on the gas and the second processing gas.

  In the present invention according to claims 4 and 5, the first processing gas, the second processing gas, and the oxide film on the surface of the silicon substrate (silicon wafer) are reacted to generate a reaction product, and the silicon wafer is brought to a predetermined temperature. By controlling, the reaction product can be sublimated to remove (etch) the natural oxide film on the surface of the silicon wafer, and the F radical can act on the surface of the silicon wafer to remove the silicon layer to a predetermined thickness. .

A vacuum processing apparatus of the present invention according to claim 6, in the vacuum processing apparatus according to claim 5, and characterized in that the auxiliary processing gas is NH ₃ or at least one of N ₂ and N ₂ To do.

  According to the sixth aspect of the present invention, a processing gas can be introduced as an auxiliary processing gas to cause F radicals to act on the surface of the silicon substrate.

A vacuum processing apparatus according to a seventh aspect of the present invention is the vacuum processing apparatus according to the sixth aspect, wherein when the F radical is applied to the control means, NH ₃ or H of the auxiliary processing gas is used. ₂ is provided with stopping means for stopping one or both of ₂ and introducing only N ₂ .

In the present invention according to claim 7, one or both of NH _{3 and} H ₂ of the first processing gas can be stopped and used as the auxiliary processing gas.

  According to an eighth aspect of the present invention, there is provided a vacuum processing apparatus of the present invention, in which a processing chamber in which a substrate is placed and the inside is brought into a predetermined vacuum state, a first processing gas in a radical state, and an auxiliary processing gas are placed in the processing chamber. By controlling the first processing gas introduction means to be introduced, the second processing gas introduction means for introducing the second processing gas that reacts with the first processing gas into the processing chamber, and the processing chamber to a predetermined temperature, Temperature control means for removing reaction products generated by reacting the first processing gas, the second processing gas, and the natural oxide film on the substrate surface; and the auxiliary processing introduced from the first processing gas introduction means. Control means for controlling a gas introduction state and removing a predetermined thickness of the surface layer of the substrate from which the natural oxide film has been removed by the auxiliary processing gas.

  In the present invention according to claim 8, after removing the natural oxide film on the substrate, the control means introduces the auxiliary process gas in the radical state into the process chamber from the first process gas introducing means, and the natural oxide film is removed. The surface layer of the subsequent substrate is removed from the auxiliary processing gas by a predetermined thickness. For this reason, the processing apparatus for removing the natural oxide film can be used to reliably remove oxygen on the surface of the substrate after the natural oxide film is removed.

A vacuum processing apparatus according to claim 9 of the present invention, characterized in that the vacuum processing apparatus according to claim 8, wherein the auxiliary processing gas is at least one of N ₂ and NF ₃ NH ₃ or N ₂ And

  In the present invention according to claim 9, all the auxiliary processing gases in the radical state can be introduced from the same gas introduction means.

The vacuum processing apparatus according to claim 10 is the vacuum processing apparatus according to claim 9, wherein when the F radical acts on the control means, one of NH _{3 and} N ₂ of the auxiliary processing gas. Alternatively, a stop means for stopping both and introducing N ₂ and NF ₃ is provided.

In the present invention according to claim 10, one or both of NH _{3 and} N ₂ can be stopped, and N ₂ and NF ₃ can be used as auxiliary process gases.

  In order to achieve the above object, a vacuum processing method of the present invention according to claim 11 introduces a processing gas and reacts with an oxidized surface of a silicon substrate placed in a predetermined vacuum atmosphere to generate a reaction product. And sublimating the reaction product by controlling the silicon substrate to a predetermined temperature to remove the oxide film on the surface of the silicon substrate, and maintaining the arrangement of the silicon substrate from which the oxide film has been removed. A gas is introduced to cause F radicals to act on the surface of the silicon substrate to remove a silicon layer having a predetermined thickness.

  In the present invention according to claim 11, the surface layer of the silicon substrate after the natural oxide film is removed is removed to a predetermined thickness by an auxiliary processing gas, and the natural oxide film is removed by using a processing apparatus for removing the natural oxide film. Then, oxygen on the surface of the substrate can be surely removed.

And the vacuum processing method of the present invention according to claim 12 is the vacuum processing method according to claim 11, wherein the processing gas is at least one of NH ₃ or N ₂ , N ₂ and NF ₃ , The reaction product is sublimated in an atmosphere of 100 ° C. to 200 ° C., the processing gas is introduced as the auxiliary processing gas, and F radicals are allowed to act on the surface of the silicon substrate.

  According to the twelfth aspect of the present invention, a processing gas can be introduced as an auxiliary processing gas to cause F radicals to act on the surface of the silicon substrate.

  A vacuum processing method according to a thirteenth aspect of the present invention is the vacuum processing method according to the twelfth aspect, wherein the auxiliary processing gas is introduced from the same gas introduction means.

In the present invention according to claim 13, by using the same gas introduction means, the auxiliary processing gas can be introduced to cause the F radical to act on the surface of the silicon substrate.

The vacuum processing method of the present invention according to claim 14 is the vacuum processing method according to claim 11, wherein the processing gas is at least one of NH ₃ or N ₂ and N ₂ and NF _3. The reaction product is sublimated in an atmosphere of 100 ° C. to 200 ° C., and N ₂ and NF ₃ are introduced as the auxiliary processing gas to cause F radicals to act on the surface of the silicon substrate.

In the present invention according to the fourteenth aspect, N ₂ and NF ₃ can be introduced as auxiliary process gases to cause F radicals to act on the surface of the silicon substrate.

  The vacuum processing apparatus and the vacuum processing method of the present invention use a processing apparatus for removing a natural oxide film, and can reliably remove oxygen on the surface of the substrate after the natural oxide film is removed.

1 is an overall configuration diagram of a vacuum processing apparatus according to a first embodiment of the present invention. It is a schematic block diagram of a processing apparatus. It is a conceptual diagram showing the condition of the process gas at the time of removing a natural oxide film. It is process explanatory drawing of a natural oxide film removal. It is a graph showing the removal condition of a natural oxide film. It is a conceptual diagram showing the condition of the process gas at the time of removing a silicon layer. It is process explanatory drawing of a silicon layer removal. It is a graph showing the removal condition of a silicon layer. It is a time chart showing the time-dependent change of the process gas of a natural oxide film removal and a silicon layer removal. It is the schematic showing a specific use. It is a conceptual diagram showing the condition of the process gas at the time of removing a silicon layer. It is process explanatory drawing of a silicon layer removal.

  A first embodiment of the present invention will be described with reference to FIGS.

  FIG. 1 shows an overall configuration of a vacuum processing apparatus according to a first embodiment of the present invention, FIG. 2 shows a schematic configuration of the processing apparatus, and FIG. 3 shows a concept representing a state of a processing gas when a natural oxide film is removed. FIG. 4 illustrates the process of removing the natural oxide film, FIG. 5 is a graph showing the removal status of the natural oxide film, FIG. 6 is a concept showing the status of the processing gas when removing the silicon layer, and FIG. FIG. 8 is a graph showing the removal state of the silicon layer, FIG. 9 is a time-dependent change in processing gas for removing the natural oxide film and the silicon layer, and FIG. 10 is a schematic diagram showing a specific application. Is shown.

The configuration of the vacuum processing apparatus will be described with reference to FIGS.
As shown in FIG. 1, a vacuum processing apparatus (etching apparatus) 1 is provided with a charging / discharging tank 2 connected to a vacuum exhaust system, and a vacuum processing tank 3 as a processing chamber is provided above the charging / discharging tank 2. It has been. A turntable 4 that can rotate at a predetermined speed is provided inside the take-out tank 2, and a boat 6 that holds a silicon substrate 5 as a substrate is supported on the turntable 4. A plurality of (for example, 50) silicon substrates 5 are accommodated in the boat 6, and the plurality of silicon substrates 5 are arranged in parallel to each other at a predetermined interval.

  The silicon of the silicon substrate 5 may be either single crystal silicon or polycrystalline silicon (polysilicon), and is simply referred to as silicon below. For this reason, when a polysilicon silicon substrate is applied, etching of a silicon layer described later is etching of the polysilicon layer.

  A feed screw 7 extending in the vertical direction is provided on the upper portion of the charging / unloading tank 2, and the turntable 4 moves up and down by driving the feed screw 7. The inside of the charging / unloading tank 2 and the vacuum processing tank 3 communicate with each other through a communication port 8 and is isolated from the atmosphere by the shutter means 9. The boat 6 (silicon substrate 5) is transferred between the take-out tank 2 and the vacuum processing tank 3 by opening and closing the shutter means 9 and raising and lowering the turntable 4.

  Note that reference numeral 10 in the drawing denotes a discharge unit that evacuates the inside of the vacuum processing tank 3.

In the side portion of the vacuum processing tank 3, there are provided two first introduction ports 11 through which radical hydrogen (H radical: H ^* ) is introduced. A shower nozzle 12 into which NF ₃ as gas) is introduced is provided. The precursor NHxFy is generated inside the vacuum processing tank 3 by the reaction between the H radicals H ^* introduced from the two first introduction ports 11 and the NF ₃ introduced from the shower nozzle 12.

As shown in FIG. 2, a first introduction path 13 is connected to the first introduction port 11, and a plasma generation unit 14 is provided in the first introduction path 13. The plasma generation unit 14 is configured to turn the processing gas into a plasma state using microwaves. NH ₃ gas and N ₂ gas as the first processing gas are supplied to the first introduction path 13 via the flow rate adjusting means 15, and the NH ₃ gas and N ₂ gas are brought into a plasma state at the plasma generation unit 14. Generates H radical H ^* . The shower nozzle 12 is supplied with NF ₃ gas via the flow rate adjusting means 16.

  The first process gas introduction means is constituted by the first introduction port 11, the first introduction path 13 and the flow rate adjustment means 15, and the second process gas introduction means is constituted by the shower nozzle 12 and the flow rate adjustment means 16.

  The vacuum processing tank 3 is provided with a lamp heater (not shown) as temperature control means, and the temperature inside the vacuum processing tank 3, that is, the temperature of the silicon substrate 5 is controlled to a predetermined state by the lamp heater. The flow state of the processing gas by the flow rate adjusting means 15 and 16 and the operating state of the lamp heater are appropriately controlled by a control device (not shown) as a control means.

  In the above-described vacuum processing apparatus 1, the boat 6 holding the silicon substrate 5 is carried into the vacuum processing tank 3, and evacuation is performed so that the inside of the vacuum processing tank 3 is kept secret and a predetermined pressure is obtained. .

In accordance with a command from the control device, a processing gas (at least one of NH ₃ gas and H ₂ and N ₂ gas, NF ₃ gas) is introduced into the vacuum processing tank 3 and silicon disposed in a predetermined vacuum atmosphere A reaction product (compound of Fy and NHx {(NH ₄ ) ₂ SiF ₆ }) is generated by reacting the natural oxidation surface (SiO ₂ ) of the substrate 5 with the processing gas (adsorption reaction at a low temperature). Then, by operating the lamp heater to control the silicon substrate 5 to a predetermined temperature (by increasing the temperature), the reaction product ((NH ₄ ) ₂ SiF ₆ ) is sublimated and the surface of the silicon substrate 5 is naturally The oxide film is removed (etched).

Furthermore, in a state where the arrangement of the silicon substrate 5 from which the natural oxide film has been removed is maintained, at least one of NH _{3 and} H ₂ , gas, N ₂ gas, and NF _{3 is used} as an auxiliary processing gas according to a command from the control device. Gas is introduced into the vacuum processing tank 3. That is, the same processing gas as that used when etching the natural oxide film is introduced. The radical F (F radical: F ^* ) generated in the vacuum processing tank 3 is allowed to act on the surface of the silicon substrate 5 to etch the silicon layer having a predetermined thickness.

At this time, NHxFy exists in the vacuum processing tank 3 together with F radicals: F ^* , but NHxFy does not act on the surface of the silicon substrate 5 in a high temperature atmosphere. For this reason, by controlling the operation of the lamp heater by the control device, the state of a predetermined temperature (for example, 100 ° C. to 200 ° C.) when the natural oxide film is etched is maintained even when the silicon layer is etched, After the natural oxide film is etched, the silicon layer having a predetermined thickness can be etched by applying only F radicals: F ^* to the surface of the silicon substrate 5.

The etching of the natural oxide film will be described with reference to FIGS.
As shown in FIG. 3, NH ₃ gas and N ₂ gas are introduced from the first introduction path 13, H radical H ^* is generated in the plasma generation unit, and H radical H ^* is vacuum-treated from the first introduction port 11. 3 is introduced. At the same time, NF ₃ gas is introduced from the shower nozzle 12 into the vacuum processing tank 3, and H radical H ^* and NF ₃ gas are mixed and reacted to generate NHxFy.
That is,
H ^* + NF ₃ → NHxFy (NH ₄ FH, NH ₄ FHF, etc.)

As shown in FIG. 4 (a), NHxFy reacts with the naturally oxidized surface (SiO ₂ ) of the silicon substrate 5, and as shown in FIG. 4 (b), (NH ₄ ) ₂ SiF which is a compound of Fy and NHx. ₆ is generated.
That is,
NHxFy + SiO ₂ → (NH ₄ ) ₂ SiF ₆ + H ₂ O ↑

Thereafter, the vacuum processing tank 3 is heated by a lamp heater (see FIG. 2) (for example, 100 ° C. to 200 ° C.), and (NH ₄ ) ₂ SiF ₆ is decomposed and sublimated as shown in FIG. Then, it is removed from the surface of the silicon substrate 5.
That is,
(NH ₄ ) ₂ SiF ₆ → NH ₃ ↑ + HF ↑ + SiF ₄ ↑

By etching the surface of the silicon substrate 5 to remove (NH ₄ ) ₂ SiF ₆ , the natural oxide film on the surface of the silicon substrate 5 is removed as shown in FIG. The At this time, as shown by a circle in FIG. 5, the etching amount of the natural oxide film increases with the etching time, and as shown by a square in FIG. 5, the silicon layer has an etching amount even if the etching time becomes longer. There is almost no change and it can be seen that the silicon layer is not etched.

  Furthermore, the surface (silicon layer) of the silicon substrate 5 from which the natural oxide film has been removed is etched in a state where the arrangement of the silicon substrate 5 from which the natural oxide film has been removed is maintained, that is, in the same vacuum processing tank 3. As a result, oxygen on the silicon surface that is the interface of the oxide film, for example, oxygen that may exist between the metal lattices of silicon, is removed, and the silicon substrate 5 in which oxygen is reliably removed from the surface can be obtained. it can. In addition, since the silicon layer is etched by an apparatus for etching a natural oxide film, oxidation or the like due to conveyance does not occur, and the silicon substrate 5 having a high surface cleanliness can be obtained by an extremely simple process.

The etching of the silicon layer after the natural oxide film is removed will be described with reference to FIGS.
As shown in FIG. 6, NH ₃ gas and N ₂ gas are introduced from the first introduction path 13, H radical H ^* and N radical N ^* are generated by the plasma generation unit 14, and H radical is introduced from the first introduction port 11. H ^* and N radical N ^* are introduced into the vacuum processing tank 3. At the same time, NF ₃ gas is introduced into the vacuum processing tank 3 from the shower nozzle 12, H radical H ^* and NF ₃ gas are mixed and reacted to generate a precursor NHxFy, and N radical N ^* and NF ₃ gas are generated. Mix and react to produce F radical F ^* .
That is,
H ^* + NF ₃ → NHxFy (NH ₄ FH, NH ₄ FHF, etc.)
N ^* + NF ₃ → N ₂ + F ₂ + F ^* (3F ^* etc.)

As shown in FIG. 7A, the inside of the vacuum processing tank 3 is maintained in a heated atmosphere in order to remove the natural oxide film, that is, decompose and sublimate (NH ₄ ) ₂ SiF ₆ . Therefore, the precursor NHxFy does not react with the surface (silicon surface) of the silicon substrate 5 maintained at a high temperature, and the F radical F ^* acts on the surface of the silicon substrate 5 as shown in FIG. The surface is etched.
That is,
Si + 4F ^* → SiF ₄ ↑

  As a result, as shown in FIG. 7C, oxygen on the silicon surface which is the interface of the natural oxide film is removed, and the silicon substrate 5 from which oxygen has been reliably removed from the surface can be obtained. At this time, as shown by □ in FIG. 8, the etching amount of the silicon layer increases according to the etching time, and as shown by Δ in FIG. 8, the layers other than the silicon layer (for example, SiN) are etched. It can be seen that the etching amount hardly changes even when the length is increased, and only the silicon layer is etched.

The introduction status of the processing gases (NH ₃ gas, N ₂ gas, and NF ₃ gas) in the above-described etching of the natural oxide film and the silicon layer will be described with reference to FIG.

Between time t1 and time t2 (for example, 520 sec), the processing gas is introduced (ON), the lamp heater is turned off, and the process in which the precursor NHxFy reacts with the natural oxide film SiO ₂ is performed (FIG. 4 ( a) (b)). From time t2 to time t3, the processing gas is stopped (OFF), the lamp heater is turned on, the compound (NH ₄ ) ₂ SiF ₆ is decomposed and sublimated, and the natural oxide film SiO ₂ is etched ( (Refer FIG.4 (c) (d)).

Subsequently, the processing gas is again introduced (ON) from time t3 to time t4 (for example, 50 to 210 seconds), the lamp heater is turned off, and F radical F ^* is generated. In the heated atmosphere, the lamp heater is appropriately turned ON / OFF to maintain the temperature after time t4, and the silicon layer is etched by F radicals F ^* (see FIGS. 7A, 7B, and 7C).

  In addition, it is also possible to implement the cooling process which cools the inside of a processing tank at the time t3.

  As described above, in the first embodiment, the natural oxide film and the silicon layer from which the natural oxide film has been removed can be removed within the same vacuum processing tank 3. For this reason, the vacuum processing apparatus 1 for removing the natural oxide film can be used to reliably remove oxygen at the interface of the silicon substrate 5 after the natural oxide film has been removed in a short time with simple control. Therefore, the silicon substrate 5 having a surface with extremely high performance can be obtained by the simple vacuum processing apparatus 1 and the processing method.

The removal of the natural oxide film and the removal of the silicon layer from which the natural oxide film has been removed are used for cleaning the bottom surface of the contact hole 21 of the semiconductor substrate as shown in FIG. That is, the natural oxide film in the contact hole 21 is removed by sublimation of (NH ₄ ) ₂ SiF ₆ , and then the silicon layer is continuously removed. This makes it possible to form the contact hole 21 having a bottom surface from which oxygen has been reliably removed, and then to realize a wiring with extremely low resistance when a wiring metal is laminated.

  A second embodiment of the silicon layer etching method (vacuum processing method) after the natural oxide film is removed will be described with reference to FIGS. FIG. 11 shows a concept representing the state of the processing gas when the silicon layer is removed in the second embodiment of the present invention, and FIG. 12 shows the process of removing the silicon layer in the second embodiment of the present invention. is there. Since the configuration of the vacuum processing apparatus 1 is the same as that of the first embodiment, description of the configuration is omitted.

In the etching method according to the second embodiment, when the natural oxide film is removed, the silicon layer is removed using NH ₃ gas, N ₂ and NF ₃ gas as the first processing gas and the second processing gas (processing gas). In this case, NH ₃ gas is stopped as an auxiliary processing gas, and N ₂ and NF ₃ are used. That is, when removing the silicon layer, the F radical F ^* is allowed to act on the silicon substrate 5 without generating the precursor NHxFy inside the vacuum processing apparatus 1. For this reason, the removal of the silicon layer is described below.

As shown in FIG. 11, N ₂ gas is introduced from the first introduction path 13 (NH ₃ gas is stopped), N radical N ^* is generated in the plasma generation unit 14, and N radical N ^* is produced from the first introduction port 11. ^* Is introduced into the vacuum processing tank 3. At the same time, NF ₃ gas is introduced from the shower nozzle 12 into the vacuum processing tank 3, and N radical N ^* and NF ₃ gas are mixed and reacted to generate F radical F ^* .
That is,
N ^* + NF ₃ → N ₂ + F ₂ + F ^* (3F ^* etc.)

As shown in FIG. 12 (a), F radicals F ^* are introduced into the inside of the vacuum processing tank 3, and as shown in FIG. 12 (b), the F radicals F ^* act on the surface of the silicon substrate 5 to cause the surface. Is etched.
That is,
Si + 4F ^* → SiF ₄ ↑

As a result, as shown in FIG. 12C, oxygen on the silicon surface which is the interface of the natural oxide film is removed, and the silicon substrate 5 from which oxygen is reliably removed from the surface can be obtained. In addition, since the NH ₃ gas is stopped, the precursor NHxFy is not generated, and even when the temperature is relatively low, the F radical F ^* can act on the surface of the silicon substrate 5 and the silicon layer is etched in a short time. It can be performed.

  As described above, in the second embodiment, as in the first embodiment, the natural oxide film can be removed and the silicon layer from which the natural oxide film has been removed can be removed within the same vacuum processing tank 3. The oxygen at the interface of the silicon substrate 5 can be reliably removed after the natural oxide film is removed in a short time with simple control. Therefore, the silicon substrate 5 having a surface with extremely high performance can be obtained by the simple vacuum processing apparatus 1 and the processing method.

In each of the above-described embodiments, NH ₃ gas, N ₂ gas, and NF ₃ gas are introduced from separate gas introduction means when etching the silicon layer. All gases may be introduced from the same gas introduction means. In this case, F radicals can be created by directly applying plasma to NF ₃ gas.

  Further, in each of the above-described embodiments, a so-called batch-type film forming apparatus is described in which a plurality of substrates are arranged in parallel to each other at a predetermined interval inside the processing chamber, but one substrate is provided in the processing chamber. The processing may be performed by a so-called single-wafer apparatus that is arranged one by one.

  The present invention can be used in the industrial field of a vacuum processing apparatus and a vacuum processing method for performing etching in a processing chamber in a vacuum state.

DESCRIPTION OF SYMBOLS 1 Vacuum processing apparatus 2 Preparation taking-out tank 3 Vacuum processing tank 4 Turntable 5 Silicon substrate 6 Boat 7 Feed screw 8 Communication port 9 Shutter means 10 Discharge part 11 1st introduction port 12 Shower nozzle 13 1st introduction path 14 Plasma generation part 15 16 Flow rate adjusting means 21 Contact hole

Claims (14)

A processing chamber in which the substrate is placed and the inside is in a predetermined vacuum state;
First processing gas introduction means for introducing a first processing gas or an auxiliary processing gas in a radical state into the processing chamber;
Second process gas introduction means for introducing a second process gas that reacts with the first process gas or the auxiliary process gas into the process chamber;
Temperature control means for removing reaction products generated by reacting the first processing gas, the second processing gas, and the natural oxide film on the substrate surface by controlling the processing chamber to a predetermined temperature;
The surface layer of the substrate from which the natural oxide film has been removed by controlling the introduction status of the auxiliary process gas introduced from the first process gas introduction means and the second process gas introduced from the second process gas introduction means And a control means for removing a predetermined thickness by the auxiliary processing gas and the second processing gas. The vacuum processing apparatus according to claim 1,
A plurality of the substrates are accommodated in the processing chamber,
The vacuum processing apparatus, wherein the plurality of substrates are arranged in parallel to each other at a predetermined interval. The vacuum processing apparatus according to claim 1,
A vacuum processing apparatus, wherein a single substrate is accommodated in the processing chamber. In the vacuum processing apparatus according to any one of claims 1 to 3,
The first processing gas is a gas for generating H radicals;
The second processing gas is a gas for generating NHxFy and F radicals;
The vacuum processing apparatus, wherein the substrate is a silicon substrate. The vacuum processing apparatus according to claim 4, wherein
Wherein the first processing gas is at least one of NH ₃ or _{N 2} and _{N 2,}
The second process gas is NF ₃ ;
The temperature control means controls a temperature of the silicon substrate on which a reaction product generated by reacting the first processing gas, the second processing gas, and a natural oxide film is set to a predetermined temperature, and the reaction Removing the natural oxide film from the surface of the silicon substrate by sublimating the product;
The control means removes a predetermined thickness of the silicon layer of the silicon substrate by causing F radicals to act on the surface of the silicon substrate from which the natural oxide film has been removed by the auxiliary processing gas and the second processing gas. A vacuum processing apparatus. The vacuum processing apparatus according to claim 5, wherein
The vacuum processing apparatus wherein the auxiliary processing gas is NH ₃ or one and N ₂ at least one of N _2. The vacuum processing apparatus according to claim 6,
The control means includes a stopping means for stopping one or both of NH _{3 and} N ₂ of the auxiliary processing gas and introducing only N ₂ when the F radical is caused to act. Vacuum processing equipment. A processing chamber in which the substrate is placed and the inside is in a predetermined vacuum state;
First processing gas introduction means for introducing a first processing gas and an auxiliary processing gas in a radical state into the processing chamber;
Second processing gas introduction means for introducing a second processing gas that reacts with the first processing gas into the processing chamber;
Temperature control means for removing reaction products generated by reacting the first processing gas, the second processing gas, and the natural oxide film on the substrate surface by controlling the processing chamber to a predetermined temperature;
Control means for controlling an introduction status of the auxiliary processing gas introduced from the first processing gas introduction means, and removing a predetermined thickness of the surface layer of the substrate from which the natural oxide film has been removed by the auxiliary processing gas; A vacuum processing apparatus comprising: The vacuum processing apparatus according to claim 8, wherein
The vacuum processing apparatus wherein the auxiliary processing gas is NH ₃ or _N at least one of ₂ and _{N 2} and NF _3. The vacuum processing apparatus according to claim 9, wherein
The control means is provided with a stopping means for stopping one or both of NH _{3 and} N ₂ of the auxiliary processing gas and introducing N ₂ and NF ₃ when the F radical is caused to act. A vacuum processing apparatus. Introducing a processing gas, reacting with an oxidized surface of a silicon substrate placed in a predetermined vacuum atmosphere, generating a reaction product, and sublimating the reaction product by controlling the silicon substrate to a predetermined temperature. An oxide film on the surface of the silicon substrate is removed, and in the state where the arrangement of the silicon substrate from which the oxide film has been removed is maintained, an auxiliary processing gas is introduced to cause F radicals to act on the surface of the silicon substrate to obtain a predetermined thickness of silicon. A vacuum processing method characterized by removing the layer. The vacuum processing method according to claim 11, wherein
The processing gas is at least one of NH ₃ or _{N 2} and _{N 2} and NF _3,
The reaction product is sublimated in an atmosphere of 100 ° C. to 200 ° C.,
A vacuum processing method comprising introducing the processing gas as the auxiliary processing gas and causing F radicals to act on the surface of the silicon substrate. The vacuum processing method according to claim 12, wherein
A vacuum processing method, wherein the auxiliary processing gas is introduced from the same gas introduction means. The vacuum processing method according to claim 11, wherein
The processing gas is at least one of NH ₃ or _{N 2} and _{N 2} and NF _3,
The reaction product is sublimated in an atmosphere of 100 ° C. to 200 ° C.,
A vacuum processing method, wherein N ₂ and NF ₃ are introduced as the auxiliary processing gas to cause F radicals to act on the surface of the silicon substrate.

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