JP2008028307A - Manufacturing method of substrate and heat treatment equipment - Google Patents

Manufacturing method of substrate and heat treatment equipment Download PDF

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JP2008028307A
JP2008028307A JP2006201854A JP2006201854A JP2008028307A JP 2008028307 A JP2008028307 A JP 2008028307A JP 2006201854 A JP2006201854 A JP 2006201854A JP 2006201854 A JP2006201854 A JP 2006201854A JP 2008028307 A JP2008028307 A JP 2008028307A
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gas
substrate
reaction tube
silicon
support
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Sadao Nakajima
定夫 中嶋
Kenji Kameda
賢治 亀田
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Hitachi Kokusai Electric Inc
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Hitachi Kokusai Electric Inc
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<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a substrate along with a heat treatment equipment for improved uptime ratio. <P>SOLUTION: The manufacturing method of a substrate includes a process in which a substrate 54 is supported by a substrate support 30, a process in which the substrate 54 supported by the substrate support 30 is delivered in a reactive tube 42, a process in which an oxidizing gas is introduced in the reactive tube 42 through a gas guiding nozzle 66 provided in the reactive tube 42 to oxidize the substrate 54 supported by the substrate support 30, a process in which the substrate 54 after oxidized is carried out of the reactive tube 42, and a process for cleaning the inside of the reactive tube 42. At least any one member among the reactive tube 42, the substrate support 30, and the gas guiding nozzle 66 comprises at least either silicon carbide or silicon. In the process of cleaning the inside of the reactive tube 42, a gas containing at least either hydrogen fluoride gas or chlorine fluoride gas is supplied into the reactive tube 42 to remove the oxide film formed on the member comprising at least either silicon carbide or silicon. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、半導体ウエハやガラス基板等の基板を処理するための熱処理装置及び基板の製造方法に関するものである。   The present invention relates to a heat treatment apparatus for processing a substrate such as a semiconductor wafer or a glass substrate, and a substrate manufacturing method.

この種の熱処理装置を用いて基板を熱処理する際に、炭化珪素（ＳｉＣ）製もしくはシリコン（Ｓｉ）製の反応管、基板支持具及びガス導入ノズル等の各部材に酸化珪素膜が形成される場合において、この酸化珪素膜が成長（累積）して膜厚が大きくなると、各部材と酸化珪素膜との熱膨張の差により該酸化珪素膜が剥離し、反応炉内でパーティクルが発生するとの問題があった。そこで、酸化珪素膜が形成された各部材から酸化珪素膜を除去するクリーニング工程が定期的に実施されている。   When a substrate is heat-treated using this type of heat treatment apparatus, a silicon oxide film is formed on each member such as a silicon carbide (SiC) or silicon (Si) reaction tube, a substrate support, and a gas introduction nozzle. In this case, when this silicon oxide film grows (accumulates) and becomes thicker, the silicon oxide film peels off due to the difference in thermal expansion between each member and the silicon oxide film, and particles are generated in the reaction furnace. There was a problem. Therefore, a cleaning process for removing the silicon oxide film from each member on which the silicon oxide film is formed is periodically performed.

しかしながら、このクリーニング工程は、反応炉内の各部材を取り外し、フッ化水素（又はフッ化水素とフッ化アンモニウムとの混合）等の水溶液で酸化珪素膜を除去するものであり、該クリーニング工程には多くの時間がかかっていた。また、クリーニング後の酸化珪素膜が除去された各部材を取り付ける際に、炉内にパーティクルや汚染物等が混入するため、基板の熱処理前に反応炉内を空焼きしたり、塩化水素等で処理したりして、これらのパーティクルや汚染物を除去する工程が不可欠であり、装置の稼働率を低下させる要因となっていた。   However, in this cleaning process, each member in the reaction furnace is removed, and the silicon oxide film is removed with an aqueous solution such as hydrogen fluoride (or a mixture of hydrogen fluoride and ammonium fluoride). Took a lot of time. Also, when attaching each member from which the cleaned silicon oxide film has been removed, particles, contaminants, etc. are mixed in the furnace. A process for removing these particles and contaminants by treatment is indispensable, which has been a factor in reducing the operating rate of the apparatus.

本発明の目的は、上記従来の問題を解消し、稼働率を向上させる基板の製造方法及び熱処理装置を提供することにある。   An object of the present invention is to provide a substrate manufacturing method and a heat treatment apparatus that solve the above-mentioned conventional problems and improve the operating rate.

本発明の第１の特徴とするところは、基板を支持具により支持する工程と、前記支持具により支持した基板を反応管内に搬入する工程と、前記反応管内に設けられたガス導入ノズルより、前記反応管内に酸化性ガスを導入して、前記支持具により支持した基板を酸化する工程と、酸化後の基板を前記反応管内から搬出する工程と、前記反応管内をクリーニングする工程とを有し、前記反応管、前記支持具及び前記ガス導入ノズルのうちの少なくとも何れかの部材が炭化珪素及びシリコンの少なくとも一方で構成され、前記反応管内をクリーニングする工程では、前記反応管内にフッ化水素ガス及びフッ化塩素ガスの少なくとも一方を含むガスを供給することにより、前記炭化珪素及びシリコンの少なくとも一方で構成された部材に形成された酸化膜を除去する基板の製造方法にある。   The first feature of the present invention includes a step of supporting a substrate by a support, a step of carrying the substrate supported by the support into the reaction tube, and a gas introduction nozzle provided in the reaction tube, Introducing an oxidizing gas into the reaction tube to oxidize the substrate supported by the support, carrying out the oxidized substrate from the reaction tube, and cleaning the inside of the reaction tube And at least one member of the reaction tube, the support, and the gas introduction nozzle is configured by at least one of silicon carbide and silicon, and in the step of cleaning the reaction tube, hydrogen fluoride gas is contained in the reaction tube. And a gas containing at least one of chlorine fluoride gas is formed on the member constituted by at least one of silicon carbide and silicon. In the manufacturing method of the substrate for removing the monolayer.

本発明の第２の特徴とするところは、基板を処理する反応管と、前記反応管内で基板を支持する支持具と、前記反応管に設けられ、前記反応管内に基板を酸化するための酸化性ガスを導入するガス導入ノズルとを有し、前記反応管、前記支持具及び前記ガス導入ノズルの少なくとも何れかの部材が炭化珪素及びシリコンの少なくとも一方で構成され、前記反応管内に前記炭化珪素及びシリコンの少なくとも一方で構成された部材に形成された酸化膜を除去するためのフッ化水素ガス及びフッ化塩素ガスの少なくとも一方を含むガスを供給するガス供給ラインが設けられる熱処理装置にある。   The second feature of the present invention is that a reaction tube for processing a substrate, a support for supporting the substrate in the reaction tube, and an oxidation provided in the reaction tube for oxidizing the substrate in the reaction tube. And at least one member of the reaction tube, the support, and the gas introduction nozzle is composed of at least one of silicon carbide and silicon, and the silicon carbide is contained in the reaction tube. And a heat treatment apparatus provided with a gas supply line for supplying a gas containing at least one of hydrogen fluoride gas and chlorine fluoride gas for removing an oxide film formed on a member formed of at least one of silicon.

好適には、前記フッ化水素ガス及びフッ化塩素ガスの少なくとも一方を含むガスは、フッ化水素ガスと窒素ガスとの混合ガス、フッ化水素ガスとアルゴンガスとの混合ガス、フッ化水素ガスと水素ガスとの混合ガス及びフッ化水素ガスと水蒸気との混合ガスから選択されるガスである。   Preferably, the gas containing at least one of hydrogen fluoride gas and chlorine fluoride gas is a mixed gas of hydrogen fluoride gas and nitrogen gas, a mixed gas of hydrogen fluoride gas and argon gas, or hydrogen fluoride gas. And a gas selected from a mixed gas of hydrogen gas and a mixed gas of hydrogen fluoride gas and water vapor.

本発明によれば、反応管内にフッ化水素ガス及びフッ化塩素ガスの少なくとも一方を含むガスを供給して各部材に形成された酸化膜を除去することより、各部材の取外し及び取付け等の作業を省略することが可能となり、装置の稼働率を向上させることができる。   According to the present invention, the gas containing at least one of hydrogen fluoride gas and chlorine fluoride gas is supplied into the reaction tube to remove the oxide film formed on each member, thereby removing and attaching each member. Work can be omitted, and the operating rate of the apparatus can be improved.

次に本発明の実施の形態を図面に基づいて説明する。
図１に、本発明の実施の形態に係る熱処理装置１０の一例を示す。この熱処理装置１０は、バッチ式縦型熱処理装置であり、主要部が配置される筺体１２を有する。この筺体１２の正面側には、ポッドステージ１４が接続されており、このポッドステージ１４にポッド１６が搬送される。ポッド１６には、例えば２５枚の被処理基板としてのウエハが収納され、図示しない蓋が閉じられた状態でポッドステージ１４にセットされる。 Next, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 shows an example of a heat treatment apparatus 10 according to an embodiment of the present invention. This heat treatment apparatus 10 is a batch type vertical heat treatment apparatus, and has a casing 12 in which a main part is arranged. A pod stage 14 is connected to the front side of the housing 12, and the pod 16 is conveyed to the pod stage 14. For example, 25 wafers as substrates to be processed are stored in the pod 16 and set on the pod stage 14 with a lid (not shown) closed.

筺体１２内の正面側であって、ポッドステージ１４に対向する位置には、ポッド搬送装置１８が配置されている。また、このポッド搬送装置１８の近傍には、ポッド棚２０、ポッドオープナ２２及び基板枚数検知器２４が配置されている。ポッド棚２０はポッドオープナ２２の上方に配置され、基板枚数検知器２４はポッドオープナ２２に隣接して配置される。ポッド搬送装置１８は、ポッドステージ１４とポッド棚２０とポッドオープナ２２との間でポッド１６を搬送する。ポッドオープナ２２は、ポッド１６の蓋を開けるものであり、この蓋が開けられたポッド１６内の基板の枚数が基板枚数検知器２４により検知される。   A pod transfer device 18 is disposed on the front side in the housing 12 and at a position facing the pod stage 14. Further, a pod shelf 20, a pod opener 22, and a substrate number detector 24 are arranged in the vicinity of the pod transfer device 18. The pod shelf 20 is disposed above the pod opener 22, and the substrate number detector 24 is disposed adjacent to the pod opener 22. The pod carrying device 18 carries the pod 16 among the pod stage 14, the pod shelf 20, and the pod opener 22. The pod opener 22 opens the lid of the pod 16, and the number of substrates in the pod 16 with the lid opened is detected by the substrate number detector 24.

さらに、筺体１２内には、基板移載機２６、ノッチアライナ２８及び支持具としての炭化珪素（ＳｉＣ）製の基板支持具（ボート）３０が配置されている。基板移載機２６は、例えば５枚の基板を取り出すことができるアーム（ツイーザ）３２を有し、このアーム３２を動かすことにより、ポッドオープナ２２の位置に置かれたポッド、ノッチアライナ２８及び基板支持具３０間で基板を搬送する。ノッチアライナ２８は、基板に形成されたノッチまたはオリフラを検出して基板のノッチまたはオリフラを一定の位置に揃えるものである。   Further, a substrate transfer machine 26, a notch aligner 28, and a substrate support (boat) 30 made of silicon carbide (SiC) as a support are arranged in the housing 12. The substrate transfer machine 26 has, for example, an arm (tweezer) 32 that can take out five substrates. By moving this arm 32, the pod placed at the position of the pod opener 22, the notch aligner 28, and the substrate. The substrate is transferred between the support tools 30. The notch aligner 28 detects notches or orientation flats formed on the substrate and aligns the notches or orientation flats of the substrate at a certain position.

さらに、筺体１２内の背面側上部には反応炉４０が配置されている。この反応炉４０内に、複数枚の基板を装填した基板支持具３０が搬入され熱処理が行われる。   Further, a reaction furnace 40 is disposed at the upper part on the back side in the housing 12. The substrate support 30 loaded with a plurality of substrates is carried into the reaction furnace 40 and subjected to heat treatment.

図２に反応炉４０の一例を示す。この反応炉４０は、炭化珪素（ＳｉＣ）製の反応管４２を有する。この反応管４２は、上端部が閉塞され下端部が開放された円筒形状をしており、開放された下端部はフランジ状に形成されている。この反応管４２の周囲には、ヒータ４６が配置されている。   An example of the reaction furnace 40 is shown in FIG. The reaction furnace 40 has a reaction tube 42 made of silicon carbide (SiC). The reaction tube 42 has a cylindrical shape in which the upper end is closed and the lower end is opened, and the opened lower end is formed in a flange shape. A heater 46 is disposed around the reaction tube 42.

反応管４２の下部は、基板支持具３０を挿入するために開放され、この開放部分（炉口部）は炉口シールキャップ４８がＯリング４９を挟んで当接することにより密閉されるようにしてある。炉口シールキャップ４８は、炭化珪素（ＳｉＣ）製の基板支持具３０を支持し、基板支持具３０と共に昇降可能に設けられている。炉口シールキャップ４８と基板支持具３０との間には、石英製の第１の断熱部材５２と、この第１の断熱部材５２の上部に配置された炭化珪素（ＳｉＣ）製の第２の断熱部材５０とが設けられている。基板支持具３０は、基板を支持する支持具として用いられ、多数枚、例えば２５〜１００枚の基板５４を略水平状態で隙間をもって多段に支持し、反応管４２内に装填される。   The lower part of the reaction tube 42 is opened to insert the substrate support 30, and this open part (furnace port part) is sealed by the furnace port seal cap 48 contacting the O-ring 49. is there. The furnace port seal cap 48 supports the substrate support 30 made of silicon carbide (SiC) and is provided so as to be movable up and down together with the substrate support 30. Between the furnace port seal cap 48 and the substrate support 30, there is a first heat insulating member 52 made of quartz, and a second made of silicon carbide (SiC) disposed above the first heat insulating member 52. A heat insulating member 50 is provided. The substrate support 30 is used as a support for supporting the substrate. The substrate support 30 supports a large number of, for example, 25 to 100 substrates 54 in multiple stages with a gap in a substantially horizontal state, and is loaded into the reaction tube 42.

反応管４２には、ガス供給ライン６０とガス排気ライン６２とが設けられている。ガス導入ノズル６６は反応管４２内に設けられ、ガス供給ライン６０の下流方向先端部に接続されている。ガス供給ライン６０に導入された処理ガスは、ガス導入ノズル６６を介して反応管４２内に供給される。なお、ガス導入ノズル６６は、反応管４２の内壁に沿って基板配列領域の上端よりも上方、すなわち基板支持具３０の上端よりも上方まで延びるように構成される。   The reaction tube 42 is provided with a gas supply line 60 and a gas exhaust line 62. The gas introduction nozzle 66 is provided in the reaction tube 42 and is connected to the downstream end of the gas supply line 60. The processing gas introduced into the gas supply line 60 is supplied into the reaction tube 42 via the gas introduction nozzle 66. The gas introduction nozzle 66 is configured to extend above the upper end of the substrate arrangement region along the inner wall of the reaction tube 42, that is, above the upper end of the substrate support 30.

ガス供給ライン６０は、窒素（Ｎ２）ガス、アルゴン（Ａｒ）ガス、水素（Ｈ２）ガス、酸素（Ｏ２）ガス、フッ化水素（ＨＦ）ガス、フッ化塩素（ＣｌＦ３）ガス及び水蒸気（Ｈ２Ｏ）等のガス供給源（図示省略）と接続されており、これらのガス（又は少なくとも２種以上の混合ガス）がガス供給ライン６０及びガス導入ノズル６６を介して反応管４０内に供給されるようになっている。なお、反応管４２内に供給されるガスの流量はコントローラ７０により制御されるようになっている。 The gas supply line 60 includes nitrogen (N 2 ) gas, argon (Ar) gas, hydrogen (H 2 ) gas, oxygen (O 2 ) gas, hydrogen fluoride (HF) gas, chlorine fluoride (ClF 3 ) gas, and It is connected to a gas supply source (not shown) such as water vapor (H 2 O), and these gases (or at least two kinds of mixed gases) are supplied to the reaction tube 40 via the gas supply line 60 and the gas introduction nozzle 66. It is designed to be supplied inside. The flow rate of the gas supplied into the reaction tube 42 is controlled by the controller 70.

次に、熱処理装置１０の作用について説明する。
なお、以下の説明において、熱処理装置１０を構成する各部の動作はコントローラ７０により制御される。 Next, the operation of the heat treatment apparatus 10 will be described.
In the following description, the operation of each part constituting the heat treatment apparatus 10 is controlled by the controller 70.

まず、ポッドステージ１４に複数枚の基板５４を収容したポッド１６がセットされると、ポッド搬送装置１８によりポッド１６をポッドステージ１４からポッド棚２０へ搬送し、このポッド棚２０にストックする。次に、ポッド搬送装置１８により、このポッド棚２０にストックされたポッド１６をポッドオープナ２２に搬送してセットし、このポッドオープナ２２によりポッド１６の蓋を開き、基板枚数検知器２４によりポッド１６に収容されている基板５４の枚数を検知する。   First, when the pod 16 containing a plurality of substrates 54 is set on the pod stage 14, the pod 16 is transferred from the pod stage 14 to the pod shelf 20 by the pod transfer device 18 and stocked on the pod shelf 20. Next, the pod 16 stocked on the pod shelf 20 is transported and set to the pod opener 22 by the pod transport device 18, and the lid of the pod 16 is opened by the pod opener 22. The number of substrates 54 accommodated in is detected.

次に、基板移載機２６により、ポッドオープナ２２の位置にあるポッド１６から基板５４を取り出し、ノッチアライナ２８に移載する。このノッチアライナ２８においては、基板５４を回転させながら、ノッチを検出し、検出した情報に基づいて複数枚の基板５４のノッチを同じ位置に整列させる。次に、基板移載機２６により、ノッチアライナ２８から基板５４を取り出し、基板支持具３０に移載する（基板支持工程）。   Next, the substrate transfer machine 26 takes out the substrate 54 from the pod 16 at the position of the pod opener 22 and transfers it to the notch aligner 28. In the notch aligner 28, the notch is detected while rotating the substrate 54, and the notches of the plurality of substrates 54 are aligned at the same position based on the detected information. Next, the substrate transfer device 26 takes out the substrate 54 from the notch aligner 28 and transfers it to the substrate support 30 (substrate support step).

このようにして、１バッチ分の基板５４を基板支持具３０に移載すると、例えば６００℃程度の温度に設定された反応炉４０（反応容器４３）内に複数枚の基板５４を装填した基板支持具３０を装入（搬入）し、炉口シールキャップ４８により反応炉４０内を密閉する（基板搬入工程）。次に、炉内温度を熱処理温度まで昇温させて、ガス供給ライン６０及びガス導入ノズル６６を介して反応管４２内に酸素（Ｏ２）ガスや水蒸気（Ｈ２Ｏ）等の基板５４を酸化させるための酸化性ガスを導入する。基板５４を熱処理する際、基板５４は例えば１３５０℃程度以上の温度に加熱され、該基板５４の表面が酸化される（酸化工程）。 In this way, when one batch of the substrates 54 is transferred to the substrate support 30, for example, a substrate in which a plurality of substrates 54 are loaded in the reaction furnace 40 (reaction vessel 43) set to a temperature of about 600 ° C. The support 30 is loaded (carrying in), and the inside of the reaction furnace 40 is sealed with the furnace port seal cap 48 (substrate carrying-in process). Next, the furnace temperature is raised to the heat treatment temperature, and a substrate 54 such as oxygen (O 2 ) gas or water vapor (H 2 O) is placed in the reaction tube 42 via the gas supply line 60 and the gas introduction nozzle 66. An oxidizing gas for oxidizing is introduced. When the substrate 54 is heat-treated, the substrate 54 is heated to a temperature of about 1350 ° C. or more, for example, and the surface of the substrate 54 is oxidized (oxidation process).

基板５４の熱処理が終了すると、例えば炉内温度を６００℃程度の温度に降温した後、熱処理後（酸化後）の基板５４を支持した基板支持具３０を反応管４２内から搬出し（搬出工程）、基板支持具３０に支持された全ての基板５４が冷えるまで、基板支持具３０を所定位置で待機させる。次に、待機させた基板支持具３０の基板５４が所定温度まで冷却されると、基板移載機２６により、基板支持具３０から基板５４を取り出し、ポッドオープナ２２にセットされている空のポッド１６に搬送して収容する。次に、ポッド搬送装置１８により、基板５４が収容されたポッド１６をポッド棚２０、またはポッドステージ１４に搬送して一連の処理が完了する。なお、上述した一連の処理を所定回数（所定時間）行なった後、または所望のタイミングで反応管４２内のクリーニングを行なう（クリーニング工程）。   When the heat treatment of the substrate 54 is completed, for example, the temperature in the furnace is lowered to a temperature of about 600 ° C., and then the substrate support 30 supporting the substrate 54 after the heat treatment (after oxidation) is unloaded from the reaction tube 42 (unloading step) ) The substrate support 30 is made to wait at a predetermined position until all the substrates 54 supported by the substrate support 30 are cooled. Next, when the substrate 54 of the substrate support 30 that has been put on standby is cooled to a predetermined temperature, the substrate transfer device 26 takes out the substrate 54 from the substrate support 30, and the empty pod set in the pod opener 22. It is conveyed to 16 and accommodated. Next, the pod transport device 18 transports the pod 16 containing the substrate 54 to the pod shelf 20 or the pod stage 14 to complete a series of processes. The reaction tube 42 is cleaned after the above-described series of processing is performed a predetermined number of times (predetermined time) or at a desired timing (cleaning step).

次に、上述したクリーニング工程の一例を説明する。
クリーニング工程は、上述した酸化工程により、反応管４２内壁、基板支持具３０、第１の断熱部材５２、第２の断熱部材５４及びガス導入ノズル６６等に所定膜厚の酸化珪素膜が形成された場合に実施される。 Next, an example of the above-described cleaning process will be described.
In the cleaning step, a silicon oxide film having a predetermined thickness is formed on the inner wall of the reaction tube 42, the substrate support 30, the first heat insulating member 52, the second heat insulating member 54, the gas introduction nozzle 66, and the like by the above-described oxidation step. To be implemented.

まず、コントローラ７０は、ガス供給源（図示省略）より反応管４２内にフッ化水素（ＨＦ）ガス及びフッ化塩素（ＣｌＦ３）ガスの少なくとも一方を含むクリーニングガスを供給する。より具体的には、コントローラ７０は、フッ化水素（ＨＦ）ガスと窒素（Ｎ２）ガスとの混合ガス（ＨＦ＋Ｎ２）、フッ化水素（ＨＦ）ガスとアルゴン（Ａｒ）ガスとの混合ガス（ＨＦ＋Ａｒ）、フッ化水素（ＨＦ）ガスと水素（Ｈ２）ガスとの混合ガス（ＨＦ＋Ｈ２）及びフッ化水素（ＨＦ）ガスと水蒸気（Ｈ２Ｏ）との混合ガス（ＨＦ＋Ｈ２Ｏ）から選択されるガスをガス供給ライン６０及びガス導入ノズル６６を介して反応管４０内に所定時間供給する。なお、少量の水蒸気（Ｈ２Ｏ）や水素（Ｈ２）を反応管４２内に供給することでクリーニング反応が加速される。 First, the controller 70 supplies a cleaning gas containing at least one of hydrogen fluoride (HF) gas and chlorine fluoride (ClF 3 ) gas into the reaction tube 42 from a gas supply source (not shown). More specifically, the controller 70 includes a mixed gas (HF + N 2 ) of hydrogen fluoride (HF) gas and nitrogen (N 2 ) gas, and a mixed gas of hydrogen fluoride (HF) gas and argon (Ar) gas. (HF + Ar), a mixed gas (HF + H 2 ) of hydrogen fluoride (HF) gas and hydrogen (H 2 ) gas, and a mixed gas (HF + H 2 O) of hydrogen fluoride (HF) gas and water vapor (H 2 O) Is supplied into the reaction tube 40 through the gas supply line 60 and the gas introduction nozzle 66 for a predetermined time. The cleaning reaction is accelerated by supplying a small amount of water vapor (H 2 O) or hydrogen (H 2 ) into the reaction tube 42.

これにより、反応管４２内壁、基板支持具３０、第１の断熱部材５２、第２の断熱部材５４及びガス導入ノズル６６等の表面に形成された酸化珪素膜がクリーニングガスとの反応により除去される。なお、クリーニングガス種は、上述したフッ化水素（ＨＦ）ガス、フッ化塩素（ＣｌＦ３）を含むものに限らず、酸化珪素膜と反応し、かつ炭化珪素（ＳｉＣ）又はシリコン（Ｓｉ）の部材と反応しない、もしくは反応性が低いガスであればよい。 Thereby, the silicon oxide films formed on the inner wall of the reaction tube 42, the substrate support 30, the first heat insulating member 52, the second heat insulating member 54, the gas introduction nozzle 66, and the like are removed by the reaction with the cleaning gas. The The cleaning gas species is not limited to the above-described one containing hydrogen fluoride (HF) gas or chlorine fluoride (ClF 3 ), but reacts with the silicon oxide film and is made of silicon carbide (SiC) or silicon (Si). Any gas that does not react with the member or has low reactivity may be used.

続いて、コントローラ７０は、ガス供給源（図示省略）より反応管４２内に不活性ガスを供給する。より具体的には、コントローラ７０は、例えばアルゴン（Ａｒ）ガス、窒素（Ｎ２）ガス等をガス供給ライン６０及びガス導入ノズル６６を介して反応管４２内に所定時間供給する（パージする）。これにより、反応管４２内のクリーニングガスが不活性ガスと置換される。 Subsequently, the controller 70 supplies an inert gas into the reaction tube 42 from a gas supply source (not shown). More specifically, the controller 70 supplies (purges), for example, argon (Ar) gas, nitrogen (N 2 ) gas or the like into the reaction tube 42 through the gas supply line 60 and the gas introduction nozzle 66 for a predetermined time. . Thereby, the cleaning gas in the reaction tube 42 is replaced with the inert gas.

このクリーニング工程は、コントローラ７０の制御により自動的に実施されるようになっている。なお、クリーニングガスは、処理ガスが供給されるガス供給ライン６０及びガス導入ノズルとは別の経路で反応管４０内に供給されるようにしてもよい。   This cleaning process is automatically performed under the control of the controller 70. The cleaning gas may be supplied into the reaction tube 40 through a different path from the gas supply line 60 to which the processing gas is supplied and the gas introduction nozzle.

次に、実施例及び比較例について説明する。   Next, examples and comparative examples will be described.

[実施例]
まず、熱処理装置１０において酸化工程（アニール工程を含む）を実施した。この酸化工程における酸化（又はアニール）温度は１３５０℃、酸化時間は７５０時間（連続使用時間）とした。続いて、熱処理装置１０においてクリーニング工程を実施した。すなわち、コントローラ７０の制御により、ガス供給ライン６０及びガス導入ノズル６６を介して反応管４０内にクリーニングガスを所定時間供給した。続いて、コントローラ７０の制御により、ガス供給ライン６０及びガス導入ノズル６６を介して反応管４０内に不活性ガスを所定時間供給した（パージした）。本実施例におけるクリーニングガス種は、フッ化水素（ＨＦ）ガスとアルゴン（Ａｒ）ガスとの混合ガス（ＨＦ＋Ａｒ）とした。 [Example]
First, an oxidation process (including an annealing process) was performed in the heat treatment apparatus 10. The oxidation (or annealing) temperature in this oxidation step was 1350 ° C., and the oxidation time was 750 hours (continuous use time). Subsequently, a cleaning process was performed in the heat treatment apparatus 10. That is, the cleaning gas was supplied into the reaction tube 40 through the gas supply line 60 and the gas introduction nozzle 66 under the control of the controller 70 for a predetermined time. Subsequently, under the control of the controller 70, an inert gas was supplied (purged) into the reaction tube 40 through the gas supply line 60 and the gas introduction nozzle 66 for a predetermined time. The cleaning gas species in this example was a mixed gas (HF + Ar) of hydrogen fluoride (HF) gas and argon (Ar) gas.

反応管４２内壁、基板支持具３０、ガス導入ノズル６６、第１の断熱部材５２等の各部材に形成された酸化珪素膜の除去には６０分、パージ時間には２０分要した。クリーニング温度は８０℃とした。すなわち、本実施例におけるクリーニング工程に要する時間は８０分となった。   It took 60 minutes to remove the silicon oxide film formed on each member such as the inner wall of the reaction tube 42, the substrate support 30, the gas introduction nozzle 66, and the first heat insulating member 52, and 20 minutes to purge time. The cleaning temperature was 80 ° C. That is, the time required for the cleaning process in this example was 80 minutes.

[比較例]
まず、熱処理装置１０において上記実施例同様の酸化工程（アニール工程を含む）を実施した。続いて、クリーニング工程を実施した。本比較例におけるクリーニング工程は、反応管４２、基板支持具３０、ガス導入ノズル６６、第１の断熱部材５２等の各部材を作業員２名で取り外し、クリーニング液により該各部材に形成された酸化珪素膜を除去し、各部材を水洗い及び乾燥させた後、作業員２名で反応炉４０内に該各部材を取り付け及び調整し、反応炉４０を加熱（空焼き）するものである。本比較例におけるクリーニング液種は、フッ化水素（ＨＦ）とフッ化アンモニウム水溶液（ＮＨ４Ｆ）との混合液（ＨＦ＋ＮＨ４Ｆ）とした。また、クリーニング後の水洗いには水（Ｈ２Ｏ）を使用した。 [Comparative example]
First, an oxidation step (including an annealing step) similar to that in the above example was performed in the heat treatment apparatus 10. Subsequently, a cleaning process was performed. In the cleaning process in this comparative example, each member such as the reaction tube 42, the substrate support 30, the gas introduction nozzle 66, the first heat insulating member 52, and the like was removed by two workers, and each member was formed with a cleaning liquid. After removing the silicon oxide film and washing and drying each member, the two members attach and adjust each member in the reaction furnace 40 to heat (bake) the reaction furnace 40. The cleaning liquid type in this comparative example was a mixed liquid (HF + NH 4 F) of hydrogen fluoride (HF) and an aqueous ammonium fluoride solution (NH 4 F). Further, water (H 2 O) was used for washing with water after cleaning.

反応管４２、基板支持具３０、ガス導入ノズル６６、第１の断熱部材５２等の各部材の取り外しには１２０分、各部材に形成された酸化珪素膜の除去及び水洗いには１４４０分、各部材の乾燥には２４０分、各部材の取り付け及び調整には２４０分、反応炉４０の加熱（空焼き）には１４４０分要した。したがって、本比較例におけるクリーニング工程に要する時間は、３４８０分となった。   120 minutes for removing each member such as the reaction tube 42, the substrate support 30, the gas introduction nozzle 66, the first heat insulating member 52, and 1440 minutes for removing the silicon oxide film formed on each member and washing with water, It took 240 minutes to dry the members, 240 minutes to attach and adjust each member, and 1440 minutes to heat (blank) the reactor 40. Therefore, the time required for the cleaning process in this comparative example was 3480 minutes.

以上のように、本発明の熱処理装置１０におけるクリーニング工程は、比較例におけるクリーニング工程と比較し、該クリーニング工程にかかる時間を大幅に短縮することができ、もって装置の稼働率を向上させることができる。また、本発明の熱処理装置１０におけるクリーニング工程は、コントローラ７０により自動的に実施されるので、比較例におけるクリーニング工程と比較し、作業員の負担が軽減される。   As described above, the cleaning process in the heat treatment apparatus 10 of the present invention can significantly reduce the time required for the cleaning process as compared with the cleaning process in the comparative example, thereby improving the operating rate of the apparatus. it can. In addition, since the cleaning process in the heat treatment apparatus 10 of the present invention is automatically performed by the controller 70, the burden on the operator is reduced as compared with the cleaning process in the comparative example.

なお、反応管４２、基板支持具３０、ガス導入ノズル６６、第１の断熱部材５２等の各部材は炭化珪素（ＳｉＣ）製ではなくシリコン（Ｓｉ）製でもよい。この場合、シリコン（Ｓｉ）製の各部材に形成された酸化珪素膜は、フッ化水素（ＨＦ）ガスを含むクリーニングガスで除去することが好ましい。   Each member such as the reaction tube 42, the substrate support 30, the gas introduction nozzle 66, and the first heat insulating member 52 may be made of silicon (Si) instead of silicon carbide (SiC). In this case, the silicon oxide film formed on each member made of silicon (Si) is preferably removed with a cleaning gas containing hydrogen fluoride (HF) gas.

本発明の熱処理装置は、基板の製造工程に適用することができる。
ＳＯＩ(Silicon On Insulator)ウエハの一種であるＳＩＭＯＸ(Separation by Implanted Oxygen)ウエハの製造工程の一工程に本発明の熱処理装置を適用する例について説明する。 The heat treatment apparatus of the present invention can be applied to a substrate manufacturing process.
An example in which the heat treatment apparatus of the present invention is applied to one process of manufacturing a SIMOX (Separation by Implanted Oxygen) wafer, which is a kind of SOI (Silicon On Insulator) wafer, will be described.

まずイオン注入装置等により単結晶シリコンウエハ内への酸素イオンをイオン注入する。その後、酸素イオンが注入されたウエハを上記実施の形態の熱処理装置を用いて、例えばＡｒ、Ｏ２雰囲気のもと、１３００℃〜１４００℃、例えば１３５０℃以上の高温でアニールする。これらの処理により、ウエハ内部にＳｉＯ２層が形成された（ＳｉＯ２層が埋め込まれた）ＳＩＭＯＸウエハが作製される。 First, oxygen ions are implanted into the single crystal silicon wafer by an ion implantation apparatus or the like. Thereafter, the wafer into which oxygen ions are implanted is annealed at a high temperature of 1300 ° C. to 1400 ° C., for example, 1350 ° C. or higher, for example, in an Ar, O 2 atmosphere using the heat treatment apparatus of the above embodiment. By these processes, a SIMOX wafer in which the SiO 2 layer is formed inside the wafer (the SiO 2 layer is embedded) is manufactured.

このような基板の製造工程の一工程として行なう高温アニール処理を行なう場合であっても、本発明の熱処理装置を適用することができる。   The heat treatment apparatus of the present invention can be applied even when performing a high-temperature annealing treatment performed as one step of such a substrate manufacturing process.

また、本発明の熱処理装置は、半導体装置（デバイス）の製造工程に適用することも可能である。特に、比較的高い温度で行なう熱処理工程、例えば、ウェット酸化、ドライ酸化、水素燃焼酸化（パイロジェニック酸化）、ＨＣｌ酸化等の熱酸化工程等に適用するのが好ましい。   The heat treatment apparatus of the present invention can also be applied to a semiconductor device (device) manufacturing process. In particular, it is preferably applied to a heat treatment step performed at a relatively high temperature, for example, a thermal oxidation step such as wet oxidation, dry oxidation, hydrogen combustion oxidation (pyrogenic oxidation), HCl oxidation, or the like.

このような半導体デバイスの製造工程の一工程としての熱処理工程を行なう場合においても、本発明の熱処理装置を適用することができる。   The heat treatment apparatus of the present invention can also be applied when performing a heat treatment step as one step of the semiconductor device manufacturing step.

本発明は、半導体ウエハやガラス基板等の基板の製造方法及び熱処理装置において、反応管及び反応管内の各部材をクリーニングする必要があるものに利用することができる。   INDUSTRIAL APPLICABILITY The present invention can be used in a method for manufacturing a substrate such as a semiconductor wafer or a glass substrate and a heat treatment apparatus that require cleaning of the reaction tube and each member in the reaction tube.

本発明の実施形態に係る熱処理装置全体を示す斜視図であるIt is a perspective view which shows the whole heat processing apparatus which concerns on embodiment of this invention. 本発明の実施形態に係る熱処理装置に用いた反応炉を示す断面図であるIt is sectional drawing which shows the reaction furnace used for the heat processing apparatus which concerns on embodiment of this invention.

符号の説明Explanation of symbols

１０ 熱処理装置
３０ 基板支持具
４２ 反応管
５４ 基板
６０ ガス供給ライン
６６ ガス導入ノズル DESCRIPTION OF SYMBOLS 10 Heat processing apparatus 30 Substrate support 42 Reaction tube 54 Substrate 60 Gas supply line 66 Gas introduction nozzle

Claims (2)

基板を支持具により支持する工程と、
前記支持具により支持した基板を反応管内に搬入する工程と、
前記反応管内に設けられたガス導入ノズルより、前記反応管内に酸化性ガスを導入して、前記支持具により支持した基板を酸化する工程と、
酸化後の基板を前記反応管内から搬出する工程と、
前記反応管内をクリーニングする工程と、
を有し、
前記反応管、前記支持具及び前記ガス導入ノズルのうちの少なくとも何れかの部材が炭化珪素及びシリコンの少なくとも一方で構成され、前記反応管内をクリーニングする工程では、前記反応管内にフッ化水素ガス及びフッ化塩素ガスの少なくとも一方を含むガスを供給することにより、前記炭化珪素及びシリコンの少なくとも一方で構成された部材に形成された酸化膜を除去することを特徴とする基板の製造方法。 A step of supporting the substrate by a support;
Carrying the substrate supported by the support into the reaction tube;
Introducing an oxidizing gas into the reaction tube from a gas introduction nozzle provided in the reaction tube and oxidizing the substrate supported by the support;
Unloading the oxidized substrate from the reaction tube;
Cleaning the inside of the reaction tube;
Have
At least one member of the reaction tube, the support, and the gas introduction nozzle is configured by at least one of silicon carbide and silicon, and in the step of cleaning the inside of the reaction tube, hydrogen fluoride gas and A substrate manufacturing method, wherein an oxide film formed on a member formed of at least one of silicon carbide and silicon is removed by supplying a gas containing at least one of chlorine fluoride gas. 基板を処理する反応管と、
前記反応管内で基板を支持する支持具と、
前記反応管に設けられ、前記反応管内に基板を酸化するための酸化性ガスを導入するガス導入ノズルと、
を有し、
前記反応管、前記支持具及び前記ガス導入ノズルの少なくとも何れかの部材が炭化珪素及びシリコンの少なくとも一方で構成され、前記反応管内に前記炭化珪素及びシリコンの少なくとも一方で構成された部材に形成された酸化膜を除去するためのフッ化水素ガス及びフッ化塩素ガスの少なくとも一方を含むガスを供給するガス供給ラインが設けられることを特徴とする熱処理装置。 A reaction tube for processing the substrate;
A support for supporting the substrate in the reaction tube;
A gas introduction nozzle that is provided in the reaction tube and introduces an oxidizing gas for oxidizing the substrate into the reaction tube;
Have
At least one member of the reaction tube, the support, and the gas introduction nozzle is formed of at least one of silicon carbide and silicon, and is formed as a member formed of at least one of the silicon carbide and silicon in the reaction tube. And a gas supply line for supplying a gas containing at least one of hydrogen fluoride gas and chlorine fluoride gas for removing the oxidized film.
JP2006201854A 2006-07-25 2006-07-25 Manufacturing method of substrate and heat treatment equipment Pending JP2008028307A (en)

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