JP2008078427A - Heat treatment apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a heat treatment apparatus which reduces the contamination of a substrate by a metal element without increasing substrate manufacturing processes. <P>SOLUTION: The heat treatment apparatus 10 includes a treatment chamber 41 in which the substrate 54 is treated, and a substrate supporting member 30 which supports the substrate 54 in the treatment chamber 41. The substrate supporting member 30 has a susceptor 80 which comes in contact with the substrate 54 to support the substrate 54, and a body 76 which supports the susceptor 80. A defective layer 84 is formed on at least part of the surface of the susceptor 80. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a heat treatment apparatus for processing a substrate such as a semiconductor wafer or a glass substrate.

  It is known that a reaction tube into which a processing gas is introduced in a processing chamber of this type of heat treatment apparatus, a support that supports the substrate, and a heat insulating plate that suppresses heat radiation (escapes to heat) from the furnace port are provided. It has been. A metal element adheres (contains) to the surface (inside) of each member disposed in these processing chambers, and contamination of the substrate by this metal element is a problem. Factors in which the metal element that contaminates the substrate is present in the processing chamber are various, such as the purity of the base material (content ratio of the metal element), the purity of the gas, the degree of cleaning of the substrate to be processed, and contamination from the periphery of the processing chamber. Therefore, it is known that a defect layer is provided on the back surface of the substrate, and the metal element is taken into the defect layer (gettering) to reduce the concentration of the metal element.

  However, the above-described technique has a problem that a special substrate processing step is required to form a defective layer, which is a functional layer, on the substrate, and the number of manufacturing steps for the substrate and the semiconductor device is increased.

  An object of the present invention is to provide a heat treatment apparatus that reduces contamination of a substrate by a metal element without increasing the number of manufacturing steps of the substrate and semiconductor device.

  The first feature of the present invention includes a processing chamber for processing a substrate, and a support for supporting the substrate in the processing chamber, and the support is in contact with the substrate and supports the substrate. The heat treatment apparatus has a main body portion that supports the susceptor, and a defect layer is provided on at least a part of the surface of the susceptor.

  The second feature of the present invention is that it has a processing chamber for processing a substrate and a support for supporting the substrate in the processing chamber, and the support is in contact with the substrate and supports the substrate. And a main body portion that supports the susceptor, and at least a part of the surface of the susceptor is provided with a capturing portion that takes in a metal element.

  Preferably, the main body portion has a claw portion, and the susceptor is supported by the claw portion.

  Preferably, it has transfer means for transferring a substrate, and the susceptor has a shape that can be transferred by the transfer means.

  Preferably, the transfer means can transfer the susceptor and the substrate simultaneously.

  Preferably, the transfer means can sequentially transfer the substrate and the susceptor.

  Preferably, the base material of the susceptor is composed of at least one selected from the group consisting of quartz, single crystal silicon, polycrystalline silicon, silicon carbide, silicon-impregnated silicon carbide, and carbon.

  Preferably, the defect layer is coated with a film composed of at least one selected from the group consisting of polycrystalline silicon, silicon nitride, and silicon oxide.

  Preferably, the defect layer is coated in multiple layers with different types of film selected from the group consisting of polycrystalline silicon, silicon nitride and silicon oxide.

  Preferably, the defective layer can be removed by at least one of a chemical solution and dry etching.

  Preferably, the defect layer is subjected to at least one treatment selected from the group consisting of sandblasting, lapping, laser irradiation, and ion implantation.

  Preferably, a gas introduction path for introducing a chlorine-based gas or a reducing gas that reduces and refreshes the metal element taken in by the susceptor into the processing chamber is provided.

  Preferably, the chlorine-based gas or reducing gas is at least one gas selected from the group consisting of hydrogen chloride, dichloroethylene, and hydrogen.

  According to the present invention, since the defect layer is provided on at least a part of the surface of the susceptor, the metal element can be taken in by the defect layer, and contamination of the substrate by the metal element can be reduced.

Next, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 shows an example of a heat treatment apparatus 10 according to an embodiment of the present invention. This heat treatment apparatus 10 is a batch type vertical heat treatment apparatus, and has a casing 12 in which a main part is arranged. A pod stage 14 is connected to the front side of the housing 12, and the pod 16 is conveyed to the pod stage 14. For example, 25 wafers as substrates to be processed are stored in the pod 16 and set on the pod stage 14 with a lid (not shown) closed.

  A pod transfer device 18 is disposed on the front side in the housing 12 and at a position facing the pod stage 14. Further, a pod shelf 20, a pod opener 22, and a substrate number detector 24 are arranged in the vicinity of the pod transfer device 18. The pod shelf 20 is disposed above the pod opener 22, and the substrate number detector 24 is disposed adjacent to the pod opener 22. The pod carrying device 18 carries the pod 16 among the pod stage 14, the pod shelf 20, and the pod opener 22. The pod opener 22 opens the lid of the pod 16, and the number of substrates in the pod 16 with the lid opened is detected by the substrate number detector 24.

  Furthermore, a substrate transfer machine 26 as a transfer means, a notch aligner 28, and a substrate support (boat) 30 as a support are disposed in the housing 12. The substrate transfer machine 26 has, for example, an arm (tweezer) 32 that can take out five substrates. By moving this arm 32, the pod placed at the position of the pod opener 22, the notch aligner 28, and the substrate. The substrate is transferred between the support tools 30. The notch aligner 28 detects notches or orientation flats formed on the substrate and aligns the notches or orientation flats of the substrate at a certain position.

  Further, a reaction furnace 40 is disposed at the upper part on the back side in the housing 12. The substrate support 30 loaded with a plurality of substrates is carried into the reaction furnace 40 and subjected to heat treatment.

  An example of the reaction furnace 40 is shown in FIG. The reaction furnace 40 has a reaction tube 42 made of silicon carbide (SiC). The reaction tube 42 has a cylindrical shape in which the upper end is closed and the lower end is opened, and the opened lower end is formed in a flange shape. A quartz adapter 44 is disposed below the reaction tube 42 so as to support the reaction tube 42. The adapter 44 has a cylindrical shape with an open upper end and a lower end, and the open upper end and the lower end are formed in a flange shape. The lower surface of the lower end flange of the reaction tube 42 is in contact with the upper surface of the upper end flange of the adapter 44. A reaction vessel 43 is formed by the reaction tube 42 and the adapter 44. The reaction vessel 43 has a processing furnace 41 for processing a substrate, and a heater 46 is disposed around the reaction tube 42 excluding the adapter 44 in the reaction vessel 43.

  The lower part of the reaction vessel 43 formed by the reaction tube 42 and the adapter 44 is opened to insert the substrate support 30, and this open portion (furnace port) is an adapter with the furnace port seal cap 48 sandwiching the O-ring. It is made to seal by contacting the lower surface of the lower end flange of 44. The furnace port seal cap 48 supports the substrate support 30 and is provided so as to move up and down together with the substrate support 30. Between the furnace port seal cap 48 and the substrate support 30, there is a first heat insulating member 52 made of quartz, and a second made of silicon carbide (SiC) disposed above the first heat insulating member 52. A heat insulating member 50 is provided. The substrate support 30 supports a large number of, for example, 25 to 100 substrates 54 through a susceptor 80, which will be described later, in a multilevel manner with a gap in a substantially horizontal state, and is loaded into the reaction tube 42 (processing chamber 41). Thus, the substrate support 30 supports the substrate 54 in the processing furnace 41 via the susceptor 80 described later.

  In order to enable processing at a high temperature of 1200 ° C. or higher, the reaction tube 42 is made of silicon carbide (SiC). When this SiC reaction tube 42 is extended to the furnace port portion, and this furnace port portion is sealed with a furnace port seal cap via an O-ring, the seal portion is sealed by the heat transmitted through the SiC reaction tube. The O-ring that is a sealing material may be melted. If the seal part of the reaction tube 42 made of SiC is cooled so as not to melt the O-ring, the reaction tube 42 made of SiC is damaged due to a difference in thermal expansion due to a temperature difference. In view of this, the heating region by the heater 46 of the reaction vessel 43 is configured by the SiC reaction tube 42, and the portion outside the heating region by the heater 46 is configured by the quartz adapter 44, whereby the SiC reaction tube 42 is formed. It is possible to soften the heat transfer from the furnace, and to seal the furnace port without melting the O-ring and without damaging the reaction tube 42. Further, if the seal between the SiC reaction tube 42 and the quartz adapter 44 is improved in both surface accuracy, a temperature difference occurs because the SiC reaction tube 42 is disposed in the heating region of the heater 46. Without thermal expansion. Therefore, the flange portion at the lower end of the reaction tube 42 made of SiC can be kept flat, and no gap is formed between the adapter 44 and the sealing property can be obtained simply by placing the reaction tube 42 made of SiC on the adapter 44 made of quartz. Can be secured.

  The adapter 44 is provided with a gas supply port 56 and a gas exhaust port 59 integrally with the adapter 44. A gas introduction pipe 60 is connected to the gas supply port 56, and an exhaust pipe 62 is connected to the gas exhaust port 59.

The inner wall of the adapter 44 is on the inner side (projects) from the inner wall of the reaction tube 42, and the side wall (thick part) of the adapter 44 communicates with the gas supply port 56, and the gas introduction path 64 extends in the vertical direction. The nozzle mounting hole is provided in the upper part so as to open upward. The nozzle mounting hole is opened in the upper surface of the adapter 44 on the upper end flange side inside the reaction tube 42 and communicates with the gas supply port 56 and the gas introduction path 64. A nozzle 66 is inserted and fixed in the nozzle mounting hole. That is, the nozzle 66 is connected to the upper surface of the portion of the adapter 44 that protrudes inward from the inner wall of the reaction tube 42 in the reaction tube 42, and the nozzle 66 is supported by the upper surface of the adapter 44. With this configuration, the nozzle connection portion is not easily deformed by heat and is not easily damaged. Further, there is an advantage that the assembly and disassembly of the nozzle 66 and the adapter 44 are facilitated. The processing gas introduced into the gas supply port 56 from the gas introduction pipe 60 is supplied into the reaction tube 42 (processing chamber 41) through a gas introduction path 64 and a nozzle 66 provided in the side wall portion of the adapter 44. The nozzle 66 is configured to extend above the upper end of the substrate arrangement region along the inner wall of the reaction tube 42, that is, above the upper end of the substrate support 30.
The gas introduction pipe 60, the gas supply port 56, the gas introduction path 64, and the nozzle 66 are also used as a gas introduction path for introducing a reducing gas, which will be described later, into the processing chamber 41.

Next, the operation of the heat treatment apparatus 10 configured as described above will be described.
In the following description, the operation of each part constituting the heat treatment apparatus is controlled by the controller 70.

  First, when the pod 16 containing a plurality of substrates 54 is set on the pod stage 14, the pod 16 is transferred from the pod stage 14 to the pod shelf 20 by the pod transfer device 18 and stocked on the pod shelf 20. Next, the pod 16 stocked on the pod shelf 20 is transported and set to the pod opener 22 by the pod transport device 18, and the lid of the pod 16 is opened by the pod opener 22. The number of substrates 54 accommodated in is detected.

  Next, the substrate transfer machine 26 takes out the substrate 54 from the pod 16 at the position of the pod opener 22 and transfers it to the notch aligner 28. In the notch aligner 28, the notch is detected while rotating the substrate 54, and the notches of the plurality of substrates 54 are aligned at the same position based on the detected information. Next, the substrate transfer machine 26 takes out the substrate 54 from the notch aligner 28 and transfers it to the substrate support 30.

In this way, when one batch of the substrates 54 is transferred to the substrate support 30, for example, a substrate in which a plurality of substrates 54 are loaded in the reaction furnace 40 (processing chamber 41) set to a temperature of about 600 ° C. The support 30 is inserted, and the reactor 40 is sealed with a furnace port seal cap 48. Next, the temperature in the furnace is raised to the heat treatment temperature, and the reaction tube 42 (processing chamber) is passed from the gas introduction pipe 60 through the gas introduction port 56, the gas introduction path 64 provided in the side wall of the adapter 44, and the nozzle 66. 41) process gas is introduced into the interior. The processing gas includes nitrogen (N ₂ ), argon (Ar), hydrogen (H ₂ ), oxygen (O ₂ ), and the like. When the substrate 54 is heat-treated, the substrate 54 is heated to a temperature of, for example, about 1200 ° C. or higher.

  When the heat treatment of the substrate 54 is completed, for example, the temperature inside the furnace is lowered to a temperature of about 600 ° C., and then the substrate support 30 that supports the substrate 54 after the heat treatment is unloaded from the reaction furnace 40 (processing chamber 41). The substrate support 30 is put on standby at a predetermined position until all the substrates 54 supported by the support 30 are cooled. Next, when the substrate 54 of the substrate support 30 that has been put on standby is cooled to a predetermined temperature, the substrate transfer device 26 takes out the substrate 54 from the substrate support 30, and the empty pod set in the pod opener 22. It is conveyed to 16 and accommodated. Next, the pod transport device 18 transports the pod 16 containing the substrate 54 to the pod shelf 20 or the pod stage 14 to complete a series of processes.

Next, the substrate support 30 and the susceptor 80 will be described with reference to FIGS.
An example of the substrate support 30 is shown in FIG. The substrate support 30 includes a susceptor 80 and a main body (support) 76 that supports the susceptor 80. The main body portion 76 is made of a heat-resistant member such as quartz or silicon carbide, and connects the upper plate 72 and the lower plate 74, and a plurality (three in this embodiment) are provided. The nail | claw part 78 is provided in each of the three main-body parts 76, and many are formed so that it may protrude inside.

  As shown in FIG. 4, the susceptor 80 is formed in a circular shape having a diameter larger than that of the substrate 54, and is supported by the claw portions 78, 78, 78 of the main body portions 76, 76, 76. The substrate 54 is supported by contact. The susceptor 80 is provided with a convex portion 82 having a thickness of about 4 to 10 mm, for example, so that the susceptor 80 and the edge portion of the substrate 54 do not come into contact with each other.

  The susceptor 80 is transferred to the substrate support 30 by an operator or by the arm 32 (shown in FIG. 1) of the substrate transfer machine 26. Note that the susceptor 80 may be transferred to the substrate support 30 with the substrate 54 supported, that is, the substrate 54 and the susceptor 80 may be transferred simultaneously, or after the susceptor 80 is supported by the substrate support 30, The substrate 54 may be transferred onto the susceptor 80.

  As shown in FIG. 5, the susceptor 80 includes a base material 80a, and a defect layer 84 is provided as a capturing portion that takes in the metal element into at least a part of the surface of the base material 80a. The base material 80a is made of quartz, single crystal silicon (Si), polycrystalline silicon (Si), silicon carbide (SiC) having high purity (for example, the metal element content is a concentration of ppb (part per billion) level), It is composed of silicon-impregnated silicon carbide (Si-impregnated SiC), carbon and the like.

  The defect layer 84 is made of a film having many defects. Specifically, the defect layer 84 is made of a film made of at least one selected from the group consisting of polycrystalline silicon, silicon nitride (SiNx), and silicon oxide (SiOx), and is coated on the surface of the base material 80a. (Deposition). This film may be coated in multiple layers with different film types selected from the group consisting of polycrystalline silicon, silicon nitride and silicon oxide. These films can be formed by, for example, a CVD method or a sputtering method.

  The defect layer 84 may be a layer having many defects mechanically introduced into the surface of the base material 80a. Specifically, the defect layer 84 is configured by introducing defects on the surface of the base material 80a by processes such as sandblasting, lapping, laser irradiation, and ion implantation.

  The defect layer 84 may be a composite of the above-described film and a layer having many mechanically introduced defects. For example, the surface of the base material 80a may be coated with a polycrystalline silicon film, and defects may be mechanically introduced into the polycrystalline silicon film.

  The defect layer 84 may be provided on the entire surface of the base material 80a as shown in FIG. 5A, or may be provided only on the surface of the base material 80a as shown in FIG. 5B.

  Thus, according to the heat treatment apparatus 10 of the present invention, since the defect layer 84 is provided on at least a part of the surface of the susceptor 80, the metal element can be taken in (gettered) by the defect layer 84. , Contamination of the substrate 54 by the metal element can be reduced. In addition, when a defective layer is formed on the back surface of the substrate, a process for forming the defective layer is required during the manufacturing process of the substrate or semiconductor device. According to this, the manufacturing process of the substrate and the semiconductor device is not increased.

  FIG. 6A shows a first modification of the present embodiment. As shown in FIG. 6A, the susceptor 80 in the present modification is divided into two members (a first member 80b and a second member 80c), for example, a convex portion 82 and another portion. It has become. These two members may be made of the same material or different materials.

  FIG. 6B shows a second modification of the present embodiment. As shown in FIG. 6B, the susceptor 80 in the present modification has a through hole 80 d that penetrates the front surface and the back surface of the susceptor 80. One through hole 80d may be provided in the center, or a plurality of through holes 80d may be provided. As described above, by forming the through hole 80d in the susceptor 80, air between the substrate 54 and the susceptor 80 can be smoothly released through the through hole 80b when the substrate is placed, and the substrate 54 is prevented from slipping. be able to.

A second embodiment of the present invention will be described with reference to FIG.
As shown in FIG. 7, in the susceptor 80 in this embodiment, a SiO ₂ layer 86 is formed on the surface of a base material 80a, and a defect layer 84 is formed on the SiO ₂ layer. When the susceptor 80 is configured as described above, the susceptor 80 having a reduced ability to take in (gettering) a metal element can be reused. That is, it is conceivable that the polycrystalline silicon layer which is the defect layer 84 is deteriorated in gettering capability by repeating the heat treatment. At this time, the gettering ability can be recovered by removing (etching) the defect layer and the SiO ₂ layer and forming a new layer again on the surface of the base material 80a.

Here, an example of a method for removing the defect layer 84 and the SiO ₂ layer 86 will be described. In the susceptor 80, for example, a SiO ₂ layer 86 is formed on the surface of a single crystal silicon base material 80a, and polycrystalline silicon as a defect layer 84 is formed on the SiO ₂ layer. First, the polycrystalline silicon layer whose gettering capability is reduced is removed using a predetermined chemical solution. At this time, in order to determine whether or not the polycrystalline silicon layer has been completely removed (etching end point), it is possible to use the interference fringes of the SiO ₂ layer seen at the end of the etching of the polycrystalline silicon layer. Subsequently, the SiO ₂ layer is removed with a predetermined chemical (for example, a hydrofluoric acid solution that does not damage the base material 80a), and the surface of the base material 80a is exposed.
Note that the defect layer 84 and the SiO ₂ layer 86 may be removed by dry etching.

  As described above, the getter of the defect layer can be refreshed by reducing and refreshing the metal element gettered to the defect layer without removing the defect layer and forming a new defect layer on the base material 80a. There is also a way to restore ring ability. Hereinafter, an example of a method for reducing the metal element taken in (gettered) into the defect layer 84 will be described.

The susceptor 80 with reduced gettering capability is supported by the substrate support 30 and placed in the processing chamber 41. Subsequently, a chlorine-based gas or a reducing (reducing metal oxide) gas is introduced into the processing chamber 41 via a gas introduction path (a gas introduction pipe 60, a gas supply port 56, a gas introduction path 64, and a nozzle 66). To do. As the chlorine-based gas, hydrogen chloride gas (HCl), dichloroethylene gas (C ₂ H ₂ Cl ₂ , abbreviated as DCE) or the like is used, and as the reducing gas, hydrogen (H ₂ ) gas or the like is used. As a result, the metal element is diffused back to the surface of the susceptor 40, gasified and exhausted, whereby the metal element taken into the defect layer 84 can be reduced. Thereby, the gettering capability of the susceptor 80 can be recovered.

  A third embodiment of the present invention will be described with reference to FIGS.

  As shown in FIG. 8, the susceptor 80 in the present embodiment has an annular shape (ring shape) and supports the outer peripheral portion of the substrate 54. As described above, the susceptor 80 may be formed in a ring shape to support the outer peripheral portion of the substrate 54.

  FIG. 9A shows a susceptor 80 according to a first modification of the present embodiment. As shown in FIG. 9A, the susceptor 80 has an annular shape (C shape) with a part cut away, and supports the outer peripheral portion of the substrate 54. A notch 80e is provided in a part of the ring member 80 on the substrate insertion side. The part opened by the notch 80e is formed to be larger than the width of the arm 32 of the substrate transfer machine 26, and the arm 32 can be inserted and retracted. Thus, by making the susceptor 80 C-shaped, the substrate 54 can be inserted and retracted smoothly.

  FIG. 9B shows a susceptor 80 according to a second modification of the present embodiment. As shown in FIG. 9B, the susceptor 80 has an annular shape (ring shape) and supports the outer peripheral portion of the substrate 54. Further, a concave portion 80f in which the arm 32 can be retracted is provided at a portion of the susceptor 80 where the arm 32 of the substrate transfer device 26 is inserted. That is, the width of the recess 80f is formed larger than the width of the arm 32, and the depth of the recess 80f is slightly larger than the thickness of the arm 32 so that the arm 32 can be inserted and retracted. It is configured. Thus, by making the susceptor 80 ring-shaped and further providing the recess 80f, the substrate 54 can be inserted and retracted smoothly, and the strength of the susceptor 80 can be maintained.

A susceptor 80 according to a fourth embodiment of the present invention will be described with reference to FIG.
As shown in FIG. 10, the susceptor 80 in the present embodiment is formed in a circular shape having substantially the same diameter as the substrate 54, and is supported by the claw portion 78 of the main body portion 76. The substrate 54 is placed on upper and lower claws 78 on which the susceptor 80 is supported. Therefore, the susceptor 80 and the substrate 54 are alternately stacked along the stacking direction of the main body 76. Thus, the susceptor 80 has a circular shape having substantially the same diameter as the substrate 54, that is, a shape that can be transferred by the substrate transfer machine 26 (shown in FIG. 1). Therefore, the substrate transfer device 26 can sequentially transfer the substrate 54 and the susceptor 80 to the substrate support 30. In the present embodiment, the susceptor 80 does not support the substrate 54 and is installed as a gettering plate.

  In the description of the above embodiment, a batch-type heat treatment apparatus that heat-treats a plurality of substrates at a time is used, but the present invention is not limited to this, and is a single-wafer type. Also good.

The heat treatment apparatus of the present invention can also be applied to a substrate manufacturing process.
An example in which the heat treatment apparatus of the present invention is applied to one step of a manufacturing process of a SIMOX (Separation by Implanted Oxygen) wafer which is a kind of SOI (Silicon On Insulator) wafer will be described.

First, oxygen ions are implanted into the single crystal silicon wafer by an ion implantation apparatus or the like. Thereafter, the wafer into which oxygen ions are implanted is annealed at a high temperature of 1300 ° C. to 1400 ° C., for example, 1350 ° C. or higher, for example, in an Ar, O ₂ atmosphere using the heat treatment apparatus of the above embodiment. By these processes, a SIMOX wafer in which the SiO ₂ layer is formed inside the wafer (the SiO ₂ layer is embedded) is manufactured.

  In addition to the SIMOX wafer, it is also possible to apply the heat treatment apparatus of the present invention to one step of a manufacturing process of a hydrogen anneal wafer or an Ar anneal wafer. In this case, the wafer is annealed at a high temperature of about 1200 ° C. or higher in a hydrogen atmosphere or an Ar atmosphere using the heat treatment apparatus of the present invention. As a result, crystal defects in the wafer surface layer where an IC (integrated circuit) is formed can be reduced, and crystal integrity can be improved. In addition, the heat treatment apparatus of the present invention can be applied to one step of the epitaxial wafer manufacturing process.

  The heat treatment apparatus of the present invention can be applied even when a high temperature annealing process is performed as one process of the substrate manufacturing process as described above.

The heat treatment apparatus of the present invention can also be applied to a semiconductor device (device) manufacturing process.
In particular, a heat treatment process performed at a relatively high temperature, for example, a thermal oxidation process such as wet oxidation, dry oxidation, hydrogen combustion oxidation (pyrogenic oxidation), HCl oxidation, boron (B), phosphorus (P), arsenic (As ), An antimony (Sb) or other impurity (dopant) is preferably applied to a thermal diffusion process for diffusing the semiconductor thin film.

  The heat treatment apparatus of the present invention can also be applied when performing a heat treatment step as one step of manufacturing a semiconductor device.

  INDUSTRIAL APPLICABILITY The present invention can be used in a heat treatment apparatus for processing a substrate such as a semiconductor wafer or a glass substrate that needs to reduce the contamination of the substrate with a metal element.

It is a perspective view showing the whole heat treatment apparatus concerning a 1st embodiment of the present invention. It is sectional drawing which shows the reaction furnace used for the heat processing apparatus which concerns on the 1st Embodiment of this invention. It is a front view which shows the board | substrate support tool and susceptor used for the heat processing apparatus which concerns on the 1st Embodiment of this invention. The susceptor which concerns on the 1st Embodiment of this invention is shown, (a) is the sectional view on the AA line of FIG. 3, (b) is the sectional view on the BB line of (a). The susceptor which concerns on the 1st Embodiment type system of this invention is shown, (a) is a susceptor which provided the defect layer in the whole base material, (b) demonstrates the susceptor which provided the defect layer only in the surface of the base material. It is a schematic diagram. The modification of the susceptor which concerns on the 1st Embodiment of this invention is shown, (a) is the 1st modification which used the susceptor as a division type, (b) is the 2nd modification which provided the through-hole in the susceptor. It is the top view and longitudinal cross-sectional view to explain. It is a schematic diagram explaining the susceptor which concerns on the 2nd Embodiment of this invention. The susceptor which concerns on the 3rd Embodiment of this invention is shown, (a) is a horizontal sectional view, (b) is CC sectional view taken on the line of (a). The modification of the susceptor which concerns on the 3rd Embodiment of this invention is shown, (a) is the 1st modification which made the susceptor C shape, (b) is the 2nd modification which provided the recessed part in the susceptor. It is the top view and longitudinal cross-sectional view to explain. The susceptor which concerns on the 4th Embodiment of this invention is shown, (a) is a horizontal sectional view, (b) is the DD sectional view taken on the line of (a).

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Heat processing apparatus 30 Substrate support 41 Processing chamber 54 Substrate 76 Main part 80 Susceptor 84 Defect layer

Claims (1)

A processing chamber for processing the substrate;
A support for supporting the substrate in the processing chamber;
The support has a susceptor that contacts the substrate and supports the substrate, and a main body that supports the susceptor, and a defect layer is provided on at least a part of the surface of the susceptor. Heat treatment equipment.

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