JP2007103765A - Substrate treatment unit - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate treatment unit that prevents a substrate surface from being damaged without causing substrate pitch extension. <P>SOLUTION: This substrate treatment unit 10 comprises a treatment chamber 45 for treating a substrate 54, a heater 46 for heating the treatment chamber 45, a support 30 for horizontally holding a plurality of substrates stacked with clearances within the treatment chamber 45, and a substrate carrying plate 32 for carrying the substrate 54 to the support 30. The support 30 has a plurality of annular support plates 80 for holding the substrates 54 one by one, and at least a portion for inserting the substrate carrying plate 32 of each support plate 80 is placed in a way that it is placed outside the substrate 54 when the substrate 54 is mounted on the support plate 80. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus for processing semiconductor wafers, glass substrates, and the like.

  As this type of substrate processing apparatus, an apparatus including a support member (boat) that supports a plurality of substrates and a ring-shaped support plate that supports the substrates one by one is known. By using this support plate, even if thermal stress is suddenly applied to the substrate supported by the support plate, crystal defects (slip) due to tensile stress or contact weight stress between the contact surfaces generated on the substrate ) Can be suppressed.

  However, although this support plate is effective in suppressing slip generated on the substrate, when the substrate is deformed (warped) during heat treatment, the substrate and the back surface of the support plate located above collide with each other, and the substrate surface May be scratched and particles may be generated. Accordingly, there is a problem that the heat treatment conditions need to be changed (relaxed) and a wider boat pitch (wafer pitch) is required, resulting in a decrease in throughput (the number of substrates processed per batch is reduced).

  An object of the present invention is to provide a substrate processing apparatus capable of solving the above-described conventional problems and increasing the number of processed substrates.

  The first feature of the present invention is that a processing chamber for processing a substrate, a heater for heating the processing chamber, and a support for supporting a plurality of substrates in a multi-stage at a horizontal posture in the processing chamber. And a substrate transport plate for transporting the substrate to the support, and the support includes a plurality of ring-shaped support plates for supporting the substrates one by one, and at least each of the support plates The part into which the substrate transport plate is inserted is in a substrate processing apparatus arranged so as to be positioned at a part outside the substrate when the substrate is placed on the support plate.

  The second feature of the present invention is that a processing chamber for processing a substrate, a heater for heating the processing chamber, and a support for supporting a plurality of substrates in a plurality of stages in the processing chamber at intervals in a horizontal posture. The support device includes a plurality of ring-shaped support plates for supporting the substrates one by one, and each support plate is located below the substrate support surface and has different portions of the support plates. Is provided in a substrate processing apparatus disposed so as to be positioned on a portion outside the substrate when the substrate is placed on the support plate.

  The third feature of the present invention is that a processing chamber for processing a substrate, a heater for heating the processing chamber, and a support for supporting a plurality of substrates in a plurality of stages in the processing chamber at intervals in a horizontal posture. The support device includes a plurality of ring-shaped support plates for supporting the substrates one by one, and at least a portion of each support plate is configured to be thicker than the other portions. The portion is in the substrate processing apparatus arranged so as to be positioned outside the substrate when the substrate is placed on the support plate.

  Preferably, the connecting portion of the support plate, or the portion configured to be thicker than other portions, is at least a portion on the substrate insertion side.

  Preferably, the connecting portion of the support plate or a portion configured to be thicker than other portions is a portion into which a substrate transport plate for transporting the substrate to the support is inserted.

  Preferably, a concave portion corresponding to the substrate transport plate is provided in a portion configured to be thicker than the other portion of the support plate.

  Preferably, the connecting portion of the support plate or a portion configured to be thicker than other portions is configured to be able to retract the substrate transport plate.

  Further, the substrate processing method, the semiconductor device manufacturing method, and the substrate manufacturing method according to the present invention are arranged so that at least a portion into which the substrate transport plate is inserted is positioned on a portion outside the substrate when the substrate is placed. A step of supporting a plurality of substrates one by one in a horizontal posture at intervals in a ring-shaped support plate, a step of carrying the substrates supported by the support plate into a processing chamber, and the support A step of heat-treating the substrate supported by the plate in the processing chamber; and a step of unloading the heat-treated substrate from the processing chamber.

  According to the present invention, since at least the portion of the support plate provided in the support member into which the substrate transport plate is inserted is disposed so as to be positioned on the outer portion of the substrate when the substrate is placed on the support plate, It is possible to prevent the substrate surface from being scratched without increasing the boat pitch (wafer pitch), thereby reducing the particles, increasing the temperature of the furnace, and improving the throughput. In addition, the boat pitch (wafer pitch) can be reduced, and the number of processed substrates can be increased.

Next, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 shows an example of a substrate processing apparatus 10 according to an embodiment of the present invention. This substrate processing apparatus 10 is a batch type vertical heat treatment apparatus, and has a casing 12 in which a main part is arranged. A pod stage 14 is connected to the front side of the housing 12, and the pod 16 is conveyed to the pod stage 14. For example, 25 wafers as substrates to be processed are stored in the pod 16 and set on the pod stage 14 with a lid (not shown) closed.

  A pod transfer device 18 is disposed on the front side in the housing 12 and at a position facing the pod stage 14. Further, a pod shelf 20, a pod opener 22, and a substrate number detector 24 are arranged in the vicinity of the pod transfer device 18. The pod shelf 20 is disposed above the pod opener 22, and the substrate number detector 24 is disposed adjacent to the pod opener 22. The pod carrying device 18 carries the pod 16 among the pod stage 14, the pod shelf 20, and the pod opener 22. The pod opener 22 opens the lid of the pod 16, and the number of substrates in the pod 16 with the lid opened is detected by the substrate number detector 24.

  Further, a substrate transfer machine 26, a notch aligner 28, and a support (boat) 30 are disposed in the housing 12. The substrate transfer machine 26 has, for example, a substrate transport plate (arm) 32 that can take out five substrates. By moving the substrate transport plate 32, the pod 16 placed at the position of the pod opener 22, The substrate is transferred between the notch aligner 28 and the support 30. The notch aligner 28 detects notches or orientation flats formed on the substrate and aligns the notches or orientation flats of the substrate at a certain position. In addition, the support tool 30 includes a plurality of support plates 80 (for example, described later with reference to FIG. 3) for supporting the substrates one by one, and supports the plurality of substrates in multiple stages at intervals in a horizontal posture. It has become.

  Further, a reaction furnace 40 is disposed at the upper part on the back side in the housing 12. A support 30 loaded with a plurality of substrates is carried into the reaction furnace 40 and subjected to heat treatment.

  An example of the reaction furnace 40 is shown in FIG. The reaction furnace 40 has a reaction tube 42 made of silicon carbide (SiC). The reaction tube 42 has a cylindrical shape in which the upper end is closed and the lower end is opened, and the opened lower end is formed in a flange shape. A quartz adapter 44 is disposed below the reaction tube 42 so as to support the reaction tube 42. The adapter 44 has a cylindrical shape with an open upper end and a lower end, and the open upper end and the lower end are formed in a flange shape. The lower surface of the lower end flange of the reaction tube 42 is in contact with the upper surface of the upper end flange of the adapter 44. A reaction vessel 43 is formed by the reaction tube 42 and the adapter 44, and a processing chamber 45 for processing a plurality of substrates is provided in the reaction vessel 43 (reaction tube 42). Further, a heater 46 for heating the inside of the processing chamber 45 is disposed around the reaction tube 42 excluding the adapter 44 in the reaction vessel 43.

  The lower part of the reaction vessel 43 formed by the reaction tube 42 and the adapter 44 is opened to insert the support 30, and the open portion (furnace port portion) of the adapter 44 is sandwiched by the furnace port seal cap 48 sandwiching the O-ring. It is made to seal by contact | abutting to the lower surface of the lower end part flange of this. The furnace port seal cap 48 supports the support tool 30 and is provided so as to move up and down together with the support tool 30. Between the furnace port seal cap 48 and the support 30, a first heat insulating member 52 made of quartz and a second heat insulating member made of silicon carbide (SiC) disposed on the upper portion of the first heat insulating member 52. A member 50 is provided. The support 30 supports a large number of, for example, 25 to 100 substrates 54 in multiple stages with a gap in a substantially horizontal state, and is loaded into the reaction tube 42 (processing chamber 45).

  In order to enable processing at a high temperature of 1200 ° C. or higher, the reaction tube 42 is made of silicon carbide (SiC). When the SiC reaction tube 42 is extended to the furnace port portion and the furnace port portion is sealed by the furnace port seal cap 48 via the O-ring, the heat transferred through the SiC reaction tube 42 is used. There is a possibility that the temperature of the seal portion becomes high and the O-ring that is a seal material is melted. If the seal part of the reaction tube 42 made of SiC is cooled so as not to melt the O-ring, the reaction tube 42 made of SiC is damaged due to a difference in thermal expansion due to a temperature difference. In view of this, the heating region by the heater 46 of the reaction vessel 43 is configured by the SiC reaction tube 42, and the portion outside the heating region by the heater 46 is configured by the quartz adapter 44, whereby the SiC reaction tube 42 is formed. It is possible to soften the transfer of heat from the furnace and seal the furnace port without melting the O-ring and damaging the reaction tube 42. Further, if the seal between the SiC reaction tube 42 and the quartz adapter 44 is improved in both surface accuracy, a temperature difference occurs because the SiC reaction tube 42 is disposed in the heating region of the heater 46. Without thermal expansion. Therefore, the flange portion at the lower end of the reaction tube 42 made of SiC can be kept flat, and no gap is formed between the adapter 44 and the sealing property can be obtained simply by placing the reaction tube 42 made of SiC on the adapter 44 made of quartz. Can be secured.

  The adapter 44 is provided with a gas supply port 56 and a gas exhaust port 59 integrally with the adapter 44. A gas introduction pipe 60 is connected to the gas supply port 56, and an exhaust pipe 62 is connected to the gas exhaust port 59.

  The inner wall of the adapter 44 is on the inner side (projects) from the inner wall of the reaction tube 42, and the side wall portion (thick portion) of the adapter 44 communicates with the gas supply port 56 and extends in the vertical direction. The nozzle mounting hole is provided in the upper part so as to open upward. The nozzle mounting hole is opened on the upper surface of the adapter 44 on the upper end flange side inside the reaction tube 42 and communicates with the gas supply port 56 and the gas introduction path 64. A nozzle 66 is inserted and fixed in the nozzle mounting hole. That is, the nozzle 66 is connected to the upper surface of the portion of the adapter 44 that protrudes inward from the inner wall of the reaction tube 42 in the reaction tube 42, and the nozzle 66 is supported by the upper surface of the adapter 44. With this configuration, the nozzle connection portion is not easily deformed by heat and is not easily damaged. Further, there is an advantage that the assembly and disassembly of the nozzle 66 and the adapter 44 are facilitated. The processing gas introduced from the gas introduction pipe 60 to the gas supply port 56 is supplied into the reaction pipe 42 through the gas introduction path 64 and the nozzle 66 provided in the side wall portion of the adapter 44. The nozzle 66 is configured to extend along the inner wall of the reaction tube 42 above the upper end of the substrate arrangement region, that is, above the upper end of the support 30.

Next, an operation of the substrate processing apparatus 10 configured as described above, that is, a substrate processing process performed as one process of a semiconductor device (device) manufacturing process or a substrate manufacturing process using the substrate processing apparatus 10 will be described.
In the following description, the operation of each part constituting the substrate processing apparatus 10 is controlled by the controller 70.

  First, when the pod 16 containing a plurality of substrates 54 is set on the pod stage 14, the pod 16 is transferred from the pod stage 14 to the pod shelf 20 by the pod transfer device 18 and stocked on the pod shelf 20. Next, the pod 16 stocked on the pod shelf 20 is transported and set to the pod opener 22 by the pod transport device 18, the lid of the pod 16 is opened by the pod opener 22, and the pod 16 is detected by the substrate number detector 24. The number of substrates 54 accommodated in is detected.

  Next, the substrate transfer machine 26 takes out the substrate 54 from the pod 16 at the position of the pod opener 22 and transfers it to the notch aligner 28. In the notch aligner 28, the notch is detected while rotating the substrate 54, and the notches of the plurality of substrates 54 are aligned at the same position based on the detected information. Next, the substrate transfer machine 26 takes out the substrate 54 from the notch aligner 28 and transfers it to the support 30. That is, a plurality of substrates are supported in multiple stages at intervals in a horizontal posture by a plurality of support plates 80 (described later) provided in the support tool 30 (substrate support process).

In this way, when one batch of substrates 54 is transferred to the support 30, a plurality of sheets are supported by a support plate 80 (described later) in a reaction furnace 40 (processing chamber 45) set at a temperature of about 600 ° C., for example. The support 30 supporting the substrate 54 is loaded (carrying in), and the inside of the reaction furnace 40 is sealed by the furnace port seal cap 48 (substrate carrying-in process). Next, the furnace temperature is raised to the heat treatment temperature, and processing is performed in the reaction tube 42 from the gas introduction pipe 60 through the gas introduction port 56, the gas introduction path 64 provided in the side wall of the adapter 44, and the nozzle 66. Introduce gas. The processing gas includes nitrogen (N ₂ ), argon (Ar), hydrogen (H ₂ ), oxygen (O ₂ ), and the like. When the substrate 54 is heat-treated in the processing chamber 45, the substrate 54 supported by a support plate 80 (described later) is heated to a temperature of, for example, about 1200 ° C. (heat treatment step).

  When the heat treatment of the substrate 54 is completed, for example, the temperature in the furnace is lowered to a temperature of about 600 ° C., and then the support 30 that supports the heat-treated substrate 54 with a support plate 80 (described later) is used as the reaction furnace 40 (processing chamber 45). ) Is unloaded (unloaded) (substrate unloading step), and the support tool 30 is put on standby at a predetermined position until all the substrates 54 supported by the support tool 30 are cooled. Next, when the substrate 54 of the support tool 30 that has been put on standby is cooled to a predetermined temperature, the substrate transfer machine 26 takes out the substrate 54 from the support tool 30 and puts it into the empty pod 16 set on the pod opener 22. Transport and store. Next, the pod transport device 18 transports the pod 16 containing the substrate 54 to the pod shelf 20 or the pod stage 14 to complete a series of processes.

  An example of the support 30 is shown in FIG. The support 30 is made of, for example, silicon carbide or silicon (single crystal or polycrystal), and includes an upper plate 72, a lower plate 74, and, for example, four columns 76, 76 that connect the upper plate 72 and the lower plate 74. 76, 76. Support pieces (claw portions) 78, 78, 78, 78 are formed on these columns 76, 76, 76, 76. The support pieces 78, 78, 78, 78 extend in the horizontal direction from the columns 76, 76, 76, 76, and are formed in large numbers on the columns 76, 76, 76, 76 at regular intervals in the vertical direction.

  Two columns 76, 76, 76, 76 are provided on the substrate insertion side (in the direction of the arrow in FIG. 3B, the substrate insertion direction side) as viewed from above, and two are provided on the side opposite to the substrate insertion side. Yes. Specifically, the two support columns 76 and 76 on the substrate insertion side are provided 180 degrees apart on the substrate insertion side, and the two support columns 76 and 76 on the side opposite to the substrate insertion side are provided on the substrate insertion side. Are provided between the two struts 76.

  Further, the support 30 is provided with a plurality of ring-shaped support plates 80 for supporting the substrates one by one. The support plate 80 is made of quartz, silicon, or silicon carbide, and is placed (installed) on the support pieces 78, 78, 78, 78 of the columns 76, 76, 76, 76.

4 and 5 show the support plate 80 in the first embodiment.
As shown in FIG. 4, the support plate 80 supports the substrate 54 in contact with the back surface of the substrate 54 (having a substrate support surface on which the substrate 54 is placed). For example, two substrate support portions 80a and 80b; Connection portions 80c and 80d for connecting different portions of the support plate 80, that is, connecting the substrate support portion 80a and the substrate support portion 80b are provided. These connection portions 80 c and 80 d are arranged so as to be positioned outside the substrate 54 when the substrate 54 is placed on the support plate 80. Moreover, the connection part 80c is arrange | positioned below the board | substrate support surface, and is comprised thicker than another part (board | substrate support part 80a, 80b).

  As shown in FIG. 5, the portion configured to be thicker than the other portion of the support plate 80, that is, the connection portion 80 c is a substrate transfer side that transfers the substrate 54 to the support tool 30. It is arrange | positioned in the part into which the plate 32 is inserted. The connection portion 80c is provided with a recess 80e corresponding to the substrate transport plate 32 (which can retract the substrate transport plate 32). The height of the concave portion 80e of the connection portion 80c, that is, the depth (d1 in FIG. 5B) is slightly larger than the thickness of the substrate transport plate 32 (d2 in FIG. 5B). Has been. The concave portion 80e of the connection portion 80c can prevent interference between the substrate transport plate 32 and the support plate 80 when the substrate 54 is transferred to the support plate 80. Further, the substrate 54 is placed on the support plate 80. Thereafter, the substrate transport plate 32 can be moved away by a small amount and retracted. That is, the connection portion 80c is configured so that the substrate transport plate 32 can be inserted and retracted.

  The substrate transport plate 32 supports the edge (periphery) portion of the substrate 54 with a taper surface (not shown) of the substrate transport plate 32 and transports the substrate 54 to prevent the back surface of the substrate 54 from being damaged. Yes. For this reason, the front end portion of the substrate transport plate 32 protrudes outward from the substrate 54. Therefore, the connection portion 80d of the support plate 80 disposed at a position opposite to the substrate insertion side (opposite side) is a front end portion of the substrate transfer plate 32 when the substrate transfer plate 32 is inserted into the support plate 80. Is configured so that it does not touch.

Next, a comparative example will be described.
FIG. 8 shows an example of the support plate 100 of the comparative example.
As shown in FIG. 8, the support plate 100 of the comparative example is provided with recesses 100 a and 100 a for inserting the substrate transport plate 32 at positions opposite to the substrate insertion side and the substrate insertion side on the upper surface of the support plate 100. ing. Accordingly, the thickness of the support plate 100 (d3 in FIG. 8) is formed to be thicker than the thickness of the substrate transport plate 32 (d2 in FIG. 5B described above).

Next, the support plate 80 of this example will be described in comparison with the support plate 100 of the comparative example.
FIG. 6 shows the support plate 80 of this example in comparison with the support plate 100 of the comparative example. As shown in FIG. 6A, the support plate 100 of the comparative example is placed on the support 30 (not shown) such that the distance (boat pitch) between the upper surfaces of the support plates 100 is, for example, L1. is set up. Similarly, as shown in FIG. 6B, the support plate 80 of the present example is mounted on the support 30 (not shown) so that the distance (boat pitch) between the upper surfaces of the support plates 80 is, for example, L2. (Installed). Here, the boat pitch of the support 30 on which the support plate 100 of the comparative example is placed (installed) and the boat pitch of the support 30 on which the support plate 80 of this example is placed (installed) are the same. That is, L1 = L2.

  For example, when the substrate 54 is warped at the time of entry / exit at a high temperature, as shown in FIG. 6, the substrate 54 placed on the support plate 100 of the comparative example comes into contact with the support plate 100. That is, the front surface of the substrate 54 collides with the back surface (lower surface) of the support plate 100 positioned above (FIG. 6A). As a result, the surface of the substrate 54 may be scratched and particles may be generated.

  On the other hand, the substrate 54 placed on the support plate 80 in this example does not contact the substrate 54 and the support plate 80 even when the substrate 54 is warped. That is, it does not hit the back surface (lower surface) of the support plate 80 located above the substrate 54 (FIG. 6B).

  As described above, the support plate 80 in this example is configured such that the portion of the support plate 80 where the substrate transport plate 32 is inserted (the connection portion 80c) is located outside the substrate 54 when the substrate 54 is placed on the support plate 80. By arranging so as to be located in the portion, it becomes possible to reduce the thickness of the portion other than the connection portion 80c of the support plate 80, and more space on the substrate 54 is secured as compared with the support plate 100 of the comparative example. It becomes possible to do. Accordingly, even if the furnace is moved at a high temperature, there is no contact (collision) between the substrate 54 and the back surface of the support plate 80 due to the warp (deformation) of the substrate 54. Generation | occurrence | production can be prevented and the contamination of the board | substrate 54 can be reduced. Thereby, the throughput can also be improved (by enabling a high temperature loading / unloading furnace). Furthermore, since the boat pitch (wafer pitch) can be narrowed, the number of substrates to be processed can be increased.

FIG. 7 shows a support plate 80 in the second embodiment.
Note that the same parts as those of the first embodiment are denoted by the same reference numerals in FIG.

  The support plate 80 in the second embodiment differs from the support plate 80 in the first embodiment in the shape of the connecting portion 80d. That is, the connection portion 80d of the support plate 80 in this example is disposed below the substrate support surface, similarly to the connection portion 80c, and is configured to be thicker than the other portions (substrate support portions 80a and 80b). Yes. The thicker portion of the support plate 80, that is, the connecting portion 80d is provided with a recess 80e corresponding to the substrate transport plate 32 (with which the substrate transport plate 32 can be retracted).

  As described above, the connection portion 80d having the above-described configuration can further prevent interference between the front end portion of the substrate transport plate 32 and the support plate 80. That is, the substrate transport plate 32 is inserted into the support plate 80 even when the front end portion of the substrate transport plate 32 that transports the substrate 54 protrudes greatly outside the substrate 54 placed on the substrate transport plate 32. When this is done, the tip of the substrate transport plate 32 does not come into contact with the support plate 80.

  In the description of the above embodiment, a batch-type substrate processing apparatus that heat-treats a plurality of substrates at a time is used. However, the present invention is not limited to this and is a single-wafer type. Also good.

The substrate processing apparatus of the present invention can also be applied to a substrate manufacturing process.
An example in which the substrate processing apparatus of the present invention is applied to one process of manufacturing a SIMOX (Separation by Implanted Oxygen) wafer, which is a kind of SOI (Silicon On Insulator) wafer, will be described.

First, oxygen ions are implanted into the single crystal silicon wafer by an ion implantation apparatus or the like. Thereafter, the wafer into which oxygen ions are implanted is annealed at a high temperature of 1300 ° C. to 1400 ° C., for example, 1350 ° C. or higher, for example, in an Ar, O ₂ atmosphere using the substrate processing apparatus of the above embodiment. By these processes, a SIMOX wafer in which the SiO ₂ layer is formed inside the wafer (the SiO ₂ layer is embedded) is manufactured.

  In addition to the SIMOX wafer, the substrate processing apparatus of the present invention can also be applied to one step of a manufacturing process of a hydrogen annealing wafer or an Ar annealing wafer. In this case, the wafer is annealed at a high temperature of about 1200 ° C. or higher in a hydrogen atmosphere or an Ar atmosphere using the substrate processing apparatus of the present invention. As a result, crystal defects in the wafer surface layer on which an IC (integrated circuit) is formed can be reduced, and crystal integrity can be improved. In addition, the substrate processing apparatus of the present invention can be applied to one step of the epitaxial wafer manufacturing process.

  The substrate processing apparatus of the present invention can be applied even when the high-temperature annealing process performed as one process of the substrate manufacturing process as described above is performed.

The substrate processing apparatus of the present invention can also be applied to a manufacturing process of a semiconductor device (device).
In particular, a heat treatment process performed at a relatively high temperature, for example, a thermal oxidation process such as wet oxidation, dry oxidation, hydrogen combustion oxidation (pyrogenic oxidation), HCl oxidation, boron (B), phosphorus (P), arsenic (As ), An antimony (Sb) or other impurity (dopant) is preferably applied to a thermal diffusion process for diffusing the semiconductor thin film.

  The substrate processing apparatus of the present invention can also be used when performing a heat treatment step as one step of such a semiconductor device manufacturing step.

  INDUSTRIAL APPLICABILITY The present invention can be used for a substrate processing apparatus for processing a semiconductor wafer, a glass substrate, or the like that needs to increase the number of processed substrates.

1 is a perspective view showing a substrate processing apparatus according to an embodiment of the present invention. It is a longitudinal cross-sectional view which shows the reaction furnace of the substrate processing apparatus which concerns on embodiment of this invention. The support of the substrate processing apparatus which concerns on embodiment of this invention is shown, (a) is a front view, (b) is the sectional view on the AA line of (a). The support plate in the 1st Example used for the substrate processing apparatus concerning the embodiment of the present invention is shown, (a) is a top view, (b) is a front view, (c) is a BB line of (a). Sectional drawing, (d) is a side view, (e) is a CC line longitudinal cross-sectional view. The state with which the board | substrate conveyance plate was inserted in the support plate in the 1st Example used for the substrate processing apparatus which concerns on embodiment of this invention is shown, (a) is a top view, (b) is D- of (a). It is D line sectional drawing. The support plate in the 1st Example used for the substrate processing apparatus concerning the embodiment of the present invention is compared with the support plate of a comparative example, and (a) is a GG line sectional view of Drawing 8 (a). 8A is a cross-sectional view taken along the line HH in FIG. 8A, and FIG. 8B is a cross-sectional view taken along the line BB in FIG. 4A and a vertical cross-sectional view taken along the line CC in FIG. The support plate in the 2nd Example used for the substrate processing apparatus concerning the embodiment of the present invention is shown, (a) is a top view, (b) is a front view, (c) is an EE line of (a). Sectional drawing, (d) is a side view, (e) is a FF line longitudinal sectional view. The support plate in a comparative example is shown, (a) is a top view, (b) is a front view, (c) is a sectional view taken along line GG of (a), (d) is a side view, and (e) is H- It is a H line longitudinal cross-sectional view.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Substrate processing apparatus 30 Support tool 32 Substrate conveyance plate 45 Processing chamber 46 Heater 54 Substrate 80 Support plate 80c Connection part 80e Recessed part

Claims (1)

A processing chamber for processing the substrate;
A heater for heating the processing chamber;
A support for supporting a plurality of substrates in a horizontal posture at intervals in the processing chamber;
A substrate transport plate for transporting the substrate to the support,
The support includes a plurality of ring-shaped support plates for supporting the substrates one by one, and at least a portion of the support plate into which the substrate transport plate is inserted is when the substrate is placed on the support plate. A substrate processing apparatus, wherein the substrate processing apparatus is disposed so as to be positioned on a portion outside the substrate.

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