JP2005086132A - Heat treating apparatus, manufacturing method of semiconductor device, manufacturing method of substrate, and treating method of substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a heat treating apparatus for preventing the slip dislocation defects of a substrate that occur during heat treating and flaws of the rear surface of the substrate from occurring and for producing a high quality semiconductor device or a substrate, and provide a manufacturing method of the semiconductor device, a manufacturing method of the substrate, and a treating method of the substrate. <P>SOLUTION: In the heat treating apparatus for treating a substrate 68 with the substrate being supported by a substrate support 30, the substrate support 30 includes a main body 56 and a support 58 provided to the main body 56 and contacting with the substrate 68, in which the support 58 is configured so as to contact with the substrate 68 only within a part of the rear surface corresponding to the region from the edge of the substrate 68 to the region for producing a device. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a heat treatment apparatus, a substrate processing method, a semiconductor device (device) manufacturing method, and a semiconductor wafer or glass substrate manufacturing method for heat-treating a semiconductor wafer or a glass substrate.

For example, when a substrate such as a plurality of silicon wafers is heat-treated using a vertical batch heat treatment furnace, a substrate support (boat) made of silicon carbide is used. The substrate support is provided with support grooves for supporting the substrate at, for example, three points (see Patent Document 1).
JP 2002-75979 A

  In this case, the contact area between the substrate and the substrate support is small, and load distribution with respect to the substrate's own weight is not appropriate, so a local load is generated and the substrate's own weight stress cannot be relaxed. When the heat treatment was carried out, a slip dislocation defect was generated in the substrate in the vicinity of the support groove, which resulted in a slip line. When a slip line occurs, the flatness of the substrate deteriorates. For these reasons, there is a problem in that it is difficult to manufacture an LSI having a desired pattern due to mask misalignment (focal misalignment or mask misalignment due to deformation) in a lithography process, which is one of important processes in the LSI manufacturing process. It has occurred. Also, if the acute angle portion of the substrate support is in local contact with the back surface of the substrate or the surface roughness of the contact portion of the substrate support with the substrate is rough, the substrate is deformed, extended and heated by heating the substrate. There was a problem that the back surface of the substrate was damaged by softening.

  SUMMARY OF THE INVENTION An object of the present invention is to suppress the occurrence of slip dislocation defects on a substrate and scratches on the back surface of a substrate that occur during heat treatment, and a heat treatment apparatus capable of manufacturing a high-quality semiconductor device (device) or substrate, and a method for manufacturing a semiconductor device An object of the present invention is to provide a substrate manufacturing method and a substrate processing method.

  According to a first aspect of the present invention, in the heat treatment apparatus for performing heat treatment in a state where the substrate is supported by the substrate support, the substrate support is provided in the body and the body is in contact with the substrate. A heat treatment apparatus, wherein the support part is configured to come into contact with the substrate only at a back surface portion corresponding to a region from the edge of the substrate to a device manufacturing region. .

  According to a second aspect of the present invention, in the heat treatment apparatus for performing heat treatment in a state where the substrate is supported by the substrate support, the substrate support is provided in the main body and the main body and is in contact with the substrate. And a support portion, and the support portion is configured to contact the substrate only in a region of 1.5 to 3 mm from the edge of the substrate.

  According to a third aspect of the present invention, in the heat treatment apparatus for performing heat treatment in a state where the substrate is supported by the substrate support, the substrate support is provided in the main body and the main body, and is in contact with the substrate. The support portion is formed of a ring-shaped member that is concentric with the substrate or a ring-shaped member that is partially cut out, and the inner diameter of the ring-shaped member or the ring-shaped member that is partially cut away. Is 294 mm or more and less than the substrate diameter.

  A fourth feature of the present invention resides in a heat treatment apparatus according to the first feature, wherein the support portion is formed of a ring-shaped member concentric with the substrate.

  According to a fifth feature of the present invention, in the fourth feature, the support portion is provided with a tapered surface, and when the substrate is supported, the substrate is supported by the tapered surface. In the device.

  A sixth feature of the present invention is that, in the fourth feature, the contact surface of the support portion with the substrate is subjected to mirror finishing with a surface roughness of 0.1 μm or less. Located in heat treatment equipment.

  A seventh feature of the present invention is that, in the fourth feature, the main body portion is provided with a placement portion for placing a support portion, and the support portion is fitted with the placement portion of the main body portion. In the heat treatment apparatus, a concave portion is provided.

  The eighth feature of the present invention is that, in the fourth feature, when the substrate is placed on the support portion, the support portion has a concave portion for avoiding interference with a substrate holding plate that transports the substrate. It is in the heat processing apparatus characterized by being provided.

  A ninth feature of the present invention is that, in the fourth feature, the main body portion is provided with a placement portion for placing a support portion, and the support portion on the side opposite to the substrate placement surface In order to avoid interference with the substrate holding plate that conveys the substrate when the substrate is placed on the support portion on the substrate placement surface side of the support portion, a recess is provided that fits with the placement portion of the main body portion. The heat treatment apparatus is provided with a recess.

  According to a tenth feature of the present invention, in the fourth feature, a part of the ring-shaped member is notched so as to avoid interference with a substrate holding plate that conveys a substrate. Located in heat treatment equipment.

  An eleventh feature of the present invention resides in a heat treatment apparatus according to the fourth feature, wherein the structure of the main body part and / or the support part is silicon carbide (SiC).

  A twelfth feature of the present invention is that, in the fourth feature, the substrate support is configured to support a plurality of substrates in a plurality of stages with a gap in a substantially horizontal state. It is in the heat treatment apparatus.

  A thirteenth feature of the present invention resides in a heat treatment apparatus according to the fourth feature, wherein the heat treatment is performed at a temperature of 1000 ° C. or higher.

  A fourteenth feature of the present invention resides in a heat treatment apparatus according to the fourth feature, wherein the heat treatment is performed at a temperature of 1350 ° C. or higher.

  According to a fifteenth feature of the present invention, the substrate is brought into contact with the substrate only at the back surface portion corresponding to the region from the edge of the substrate to the device fabrication region. A method of manufacturing a semiconductor device, comprising: a step of supporting a substrate by a support portion; a step of heat-treating the substrate while being supported by the support portion; and a step of unloading the substrate after the heat treatment from a processing chamber. It is in.

  The sixteenth feature of the present invention is that the substrate is supported by a step of bringing the substrate into the processing chamber and a support portion configured to come into contact with the substrate only in an area of 1.5 to 3 mm from the edge of the substrate. And a step of heat-treating the substrate supported by the support portion, and a step of unloading the heat-treated substrate from the processing chamber.

  According to a seventeenth feature of the present invention, there are a step of carrying a substrate into the processing chamber, a step of supporting the substrate by a ring-shaped member having an inner diameter of 294 mm or more and less than the substrate diameter, and the substrate by the ring-shaped member. The substrate processing method includes a step of performing a heat treatment in a supported state and a step of carrying out the substrate after the heat treatment from the processing chamber.

  According to the present invention, since the substrate is held outside the device manufacturing region of the substrate by the support portion made of a ring-shaped member, even if the substrate is rubbed due to its own weight and substrate deformation during heat treatment, The generation of scratches and slips on the substrate is suppressed, and even if it occurs, it does not relate to the quality of the device, so that the product yield can be improved. Further, by providing a recess in the support portion and fitting with the placement portion, the placement interval between the substrates can be narrowed, and the number of substrates processed per batch can be increased.

Next, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 shows a heat treatment apparatus 10 according to an embodiment of the present invention. The heat treatment apparatus 10 is, for example, a vertical type and includes a casing 12 in which a main part is arranged. A pod stage 14 is connected to the housing 12, and the pod 16 is conveyed to the pod stage 14. The pod 16 stores, for example, 25 substrates, and is set on the pod stage 14 with a lid (not shown) closed.

  In the housing 12, a pod transfer device 18 is disposed at a position facing the pod stage 14. Further, a pod shelf 20, a pod opener 22, and a substrate number detector 24 are arranged in the vicinity of the pod transfer device 18. The pod carrying device 18 carries the pod 16 among the pod stage 14, the pod shelf 20, and the pod opener 22. The pod opener 22 opens the lid of the pod 16, and the number of substrates in the pod 16 with the lid opened is detected by the substrate number detector 24.

  Further, a substrate transfer machine 26, a notch aligner 28, and a substrate support 30 (boat) are disposed in the housing 12. The substrate transfer machine 26 is provided with a substrate holding plate (tweezer) 32 for holding and transporting the substrate (five pieces in FIG. 1), and the substrate transfer machine 26 moves the pod opener 22 by moving the substrate holding plate 32. The substrate is transported between the pod, the notch aligner 28 and the substrate support 30 placed at the positions. The notch aligner 28 detects notches or orientation flats formed on the substrate and aligns the notches or orientation flats of the substrate at a certain position.

  In FIG. 2, a reactor 40 is shown. The reaction furnace 40 has a reaction tube 42, and the substrate support 30 is inserted into the reaction tube 42. The substrate support 30 is configured to support a plurality of substrates 68 in a plurality of stages with gaps (substrate pitch intervals) in a substantially horizontal state. The lower part of the reaction tube 42 is opened to insert the substrate support 30, and this open part is sealed with a seal cap 44. The periphery of the reaction tube 42 is covered with a soaking tube 46, and a heater 48 is disposed around the soaking tube 46. The thermocouple 50 is disposed between the reaction tube 42 and the soaking tube 46 so that the temperature in the reaction furnace 40 can be monitored. The reaction tube 42 is connected to an introduction tube 52 for introducing a processing gas and an exhaust tube 54 for exhausting the processing gas.

Next, the operation of the heat treatment apparatus 10 configured as described above will be described.
First, when the pod 16 containing a plurality of substrates 68 is set on the pod stage 14, the pod 16 is transferred from the pod stage 14 to the pod shelf 20 by the pod transfer device 18 and stocked on the pod shelf 20. Next, the pod 16 stocked on the pod shelf 20 is transported and set to the pod opener 22 by the pod transport device 18, the lid of the pod 16 is opened by the pod opener 22, and the pod 16 is detected by the substrate number detector 24. The number of substrates 68 accommodated in is detected.

  Next, the board | substrate transfer machine 26 takes out the board | substrate 68 from the pod 16 in the position of the pod opener 22, and transfers it to the notch aligner 28. FIG. In the notch aligner 28, the notch is detected while rotating the substrate 68, and the notches of the plurality of substrates 68 are aligned at the same position based on the detected information. Next, the substrate transfer machine 26 takes out the substrate 68 from the notch aligner 28 and transfers it to the substrate support 30.

  Thus, when one batch of the substrates 68 is transferred to the substrate support 30, the substrate support 30 in which a plurality of substrates 68 are loaded in the reaction furnace 40 set to a temperature of about 700 ° C., for example. The reaction tube 42 is sealed with a seal cap 44. Next, the furnace temperature is raised to the heat treatment temperature, and the processing gas is introduced from the introduction pipe 52. The processing gas includes nitrogen, argon, hydrogen, oxygen, and the like. When the substrate 68 is heat-treated, the substrate 68 is heated to a temperature of about 1000 ° C. or more, for example. Meanwhile, while the temperature in the reaction tube 42 is monitored by the thermocouple 50, the substrate 68 is heat-treated according to a preset temperature rise and heat treatment program.

  When the heat treatment of the substrate 68 is completed, for example, after the temperature in the furnace is lowered to a temperature of about 700 ° C., the substrate support 30 is unloaded from the reaction furnace 40, and all the substrates 68 supported by the substrate support 30 are The substrate support 30 is put on standby at a predetermined position until it cools. Even when the temperature in the furnace is lowered, the temperature is lowered according to a preset temperature drop program while monitoring the temperature in the reaction tube 42 by the thermocouple 50. Next, when the substrate 68 of the substrate support 30 that has been put on standby is cooled to a predetermined temperature, the substrate transfer device 26 takes out the substrate 68 from the substrate support 30, and an empty pod set in the pod opener 22. It is conveyed to 16 and accommodated. Next, the pod 16 containing the substrate 68 is transferred to the pod shelf 20 by the pod transfer device 18 and further transferred to the pod stage 14 to complete.

Next, the substrate support 30 in the first embodiment will be described in detail with reference to FIGS. FIG. 3 is a schematic longitudinal sectional view of the substrate support 30, and FIG. 4 is a schematic transverse sectional view of the substrate support 30. FIG. 5 is a schematic perspective view of the support portion 58.
The substrate support 30 includes a main body portion 56 and a support portion 58 provided on the main body portion 56 and in contact with the substrate 68. The support portion 58 is supported by the main body portion 56. The main body portion 56 is made of at least one material selected from the group consisting of quartz (SiO 2), silicon carbide (SiC), silicon (Si), and carbon (C), but is carbonized in a temperature range of 1000 to 1350 ° C. Silicon is preferable, and in this embodiment, silicon carbide is used. As shown in FIG. 3, the main body portion 56 includes an upper plate 60, a lower plate 62, and a plurality (four in this case) of columns 64 that connect the upper plate 60 and the lower plate 62. Further, as shown in FIGS. 3 and 4, a large number of mounting portions 66 extending in parallel to the center (substrate center) side of a circle passing from the support column 64 through the location of the support column 64 are formed in the main body portion 56. ing.

  The support portion 58 is made of at least one material selected from the group consisting of quartz (SiO 2), silicon carbide (SiC), silicon (Si), and carbon (C), similar to the main body portion 56. Silicon carbide is preferable in the temperature zone of 1350 ° C., and in this embodiment, silicon carbide is used. As shown in FIG. 5, the support portion 58 in the first embodiment is formed, for example, in a ring shape (annular shape) concentric with the substrate 68. The lower surface of the support portion 58 contacts the upper surface of the mounting portion 66 of the main body portion 56 so that the support portion 58 is mounted on the mounting portion 66 of the main body portion 56, and the upper surface of the support portion 58 (substrate mounting surface 77). The lower surface of the substrate 68 comes into contact with the substrate 68 to place and support the substrate 68. That is, the support portion 58 is continuously disposed on a plurality of placement portions 66 provided on the support column 64 of the main body portion 56, and a plurality of substrates 68 are disposed on the plurality of support portions 58 that are continuously disposed. Are arranged successively.

  When the substrate 68 and the placement portion 66 are directly contacted and supported, the placement portion 66 made of silicon carbide is harder than the silicon substrate 68, so that the substrate 68 is rubbed due to its own weight and substrate deformation during heat treatment, or the substrate transfer. A back surface scratch of about several μm may occur on the back surface of the substrate 68 due to friction between the substrate 68 and the mounting portion 66 generated when the substrate 68 is transferred by the mounting mechanism 26. In addition, there may be a case where the substrate 68 slips, such as when a local load is generated because the load distribution with respect to the weight of the substrate 68 is not appropriate. When the back surface scratches and slips are present in the device fabrication region, the device yield may be deteriorated. Therefore, the support portion 58 in the present invention is configured as a ring-shaped member to disperse the load applied to the substrate by supporting the substrate 68, thereby preventing a local load from being applied to the substrate 68. Slip is prevented from occurring. Further, by making the support portion 58 into a ring shape (Closed Ring shape), the rigidity of the support portion 58 itself is improved, and the flatness of the support portion 58 is ensured. Thereby, the generation of a local load on the substrate due to the deformation of the support portion 58 and the generation of a local load due to the shape of the contact portion of the support portion 58 with the substrate 68 are prevented.

  Further, the support portion 58 is a non-device manufactured 1.5 to 3.0 mm from the outer edge (edge) of the substrate so that the contact portion between the substrate placement surface 77 of the support portion 58 and the back surface of the substrate does not enter the device manufacturing region. It is configured to hold the substrate in the region. That is, the support portion 58 is configured to come into contact with the substrate 68 only at the back surface portion corresponding to the region from the edge of the substrate 68 to the device manufacturing region. It is configured to contact the substrate 68 only in the region of 1.5 to 3 mm from the edge of 68. As a result, even if a scratch occurs on the back surface of the substrate due to the contact between the support portion 58 and the substrate 68, only the scratch is generated in the non-device region, and no scratch is generated in the device manufacturing region. No problem.

  Further, in order to effectively suppress the substrate back surface scratch in the region of 1.5 to 3.0 mm from the outer edge portion of the substrate, the substrate mounting surface 77 of the support portion 58 has a length of 2 toward the ring center over the entire circumference. Processing is performed to form a tapered surface having a taper angle of -10 °, and the substrate 68 is supported by the tapered surface, so that the contact area between the support portion 58 and the substrate 68 is reduced. Further, since the slip can be suppressed by reducing the depth of the scratch on the back surface of the substrate, the surface roughness (Ra) of the substrate mounting surface 77 is 0 in order to reduce the frictional resistance of the substrate mounting surface 77 of the support portion 58. A mirror finish is applied so that it is 1 μm or less, preferably 0.03 μm or less. Here, Ra means arithmetic average roughness.

  Further, as shown in FIG. 5, when the substrate 68 is transferred from the substrate holding plate 32 to the support portion 58 on the substrate placement surface 77 side (the upper surface side of the support portion 58) of the support portion 58, the substrate holding plate A first recess (notch) 75 is provided so that 32 can pass without interfering with the support portion 58. That is, two portions of the support portion 58 on the substrate placement surface 77 side facing the substrate transfer machine 26 (front side) and the opposite side (back side) are cut so as to avoid interference with the substrate holding plate 32. It is missing.

  Further, on the side opposite to the substrate mounting surface 77 of the support portion 58 (the bottom surface side of the support portion 58), a second recess (notch portion) 74 is provided so as to correspond to the mounting portion 66 of the main body portion 56. It has been. That is, the four portions corresponding to the placement portion 66 on the bottom surface side of the support portion 58 are notched so as to match the claw shape of the placement portion 66. The support portion 58 is supported by the main body portion 56 so that the second concave portion 74 and the placement portion 66 are fitted. By doing so, the total thickness of the support portion 58 and the placement portion 66 can be reduced while ensuring a space through which the substrate holding plate 32 can pass without interfering with the support portion 58. Accordingly, the substrate pitch interval can be narrowed by the height of the second recess 74, and the number of substrates 68 to be processed at a time can be increased. For example, in order to increase the number of substrates processed per batch to 75 or more, the interval between the substrates 68 supported by the substrate holder 30 (substrate pitch interval) needs to be 7.5 to 12 mm. As in the embodiment, the second concave portion 74 is provided in the support portion 58 and is fitted to the placement portion 66 so that the total thickness of the support portion 58 and the placement portion 66 is reduced. Further, by fitting the mounting portion 66 in the second recess 74, the support portion 58 can be positioned with respect to the mounting portion 66, and the position of the support portion 58 can be stabilized. In this case, a slight gap may be formed between the second concave portion 74 and the placement portion 66 in consideration of thermal expansion. That is, by providing a concave portion (concave notch) 74 that fits with the placement portion 66 on the opposite side of the support portion 58 from the substrate placement surface 77, the substrate pitch interval can be minimized. The mounting part 66 and the support part 58 can be positioned.

  In addition, as for the support part 58 (ring-shaped member) in the present Example 1, it is preferable that an internal diameter is 294 mm or more and less than a substrate diameter, and an outer diameter is 303-305 mm. Moreover, it is preferable that the height (thickness) of the support portion 58 is 8 mm or more in manufacturing the ring-shaped member. Further, in order to minimize the difference in heat capacity at the contact portion between the substrate 68 and the support portion 58, the width of the substrate placement surface 77 of the support portion 58 is set to about 3 mm and the height of the support portion 58 is set to about 8 mm. Is preferred.

  Next, the substrate support 30 in the second embodiment will be described in detail. Since the configuration of the main body 56 is the same as that of the first embodiment, the description thereof is omitted here.

  FIG. 6 shows a support portion 58 in the second embodiment. FIG. 6 is a schematic perspective view of the support portion 58. As shown in FIG. 6, the support portion 58 is configured as a ring-shaped member (C-shaped Ring shape) having a substantially C-letter shape with a part cut away. That is, an opening 79 in which the front surface of the ring-shaped member is cut so that the substrate holding plate 32 can pass without interfering with the support portion 58, and a protrusion is provided on the back side of the ring-shaped member so as to escape the substrate holding plate 32. It has an open ring shape having a convex portion (protruding portion) 78. The support portion 58 in the first embodiment needs to be as high as the support portion 58 can pass through the substrate holding plate 32, whereas the support portion 58 in the second embodiment can pass through the substrate holding plate 32. Minute height can be omitted. Accordingly, since the support portion 58 in the second embodiment can be made lower in height than the support portion 58 in the first embodiment, the total thickness of the support portion 58 and the placement portion 66 is made thinner. And the substrate holding pitch interval can be further reduced. In the support portion 58 in the second embodiment described above, the substrate mounting surface 77 may be processed to have a tapered surface as in the case of the support portion 58 in the first embodiment. In addition, a concave portion 74 as in the first embodiment may be provided on the surface opposite to the substrate mounting surface 77 to stabilize the position of the support portion 58 relative to the mounting portion 66 and to increase the substrate holding pitch interval. It may be further narrowed.

  In addition, it is preferable that the support part 58 (C-type ring-shaped member) in the second embodiment has an inner diameter of 294 mm or more and less than the substrate diameter and an outer diameter of 303 to 305 mm. Moreover, it is preferable that the height (thickness) of the support portion 58 is 3 mm or more in the production of the C-shaped ring-shaped member. Further, in order to minimize the difference in heat capacity at the contact portion between the substrate 68 and the support portion 58, the width of the substrate placement surface 77 of the support portion 58 is about 3 mm, and the height of the support portion 58 is about 3-8 mm. It is preferable to do this.

  In the description of the above embodiment and examples, a batch-type apparatus for heat-treating a plurality of substrates was used as the heat treatment apparatus, but the present invention is not limited to this, and a single-wafer type is used. Also good.

  The heat treatment apparatus of the present invention can also be applied to a substrate manufacturing process.

  An example in which the heat treatment apparatus of the present invention is applied to one process of manufacturing a SIMOX (Separation by Implanted Oxygen) wafer, which is a kind of SOI (Silicon On Insulator) wafer, will be described.

  First, oxygen ions are implanted into the single crystal silicon wafer by an ion implantation apparatus or the like. Thereafter, the wafer into which oxygen ions are implanted is annealed at a high temperature of 1300 ° C. to 1400 ° C., for example, 1350 ° C. or more, for example, in an Ar, O 2 atmosphere using the heat treatment apparatus of the above embodiment. By these processes, a SIMOX wafer in which a SiO 2 layer is formed inside the wafer (an SiO 2 layer is embedded) is produced.

  In addition to the SIMOX wafer, it is also possible to apply the heat treatment apparatus of the present invention to one step of the manufacturing process of the hydrogen anneal wafer. In this case, the wafer is annealed at a high temperature of about 1200 ° C. or higher in a hydrogen atmosphere using the heat treatment apparatus of the present invention. As a result, crystal defects in the wafer surface layer on which an IC (integrated circuit) is formed can be reduced, and crystal integrity can be improved.

  In addition, the heat treatment apparatus of the present invention can be applied to one step of the epitaxial wafer manufacturing process.

  Even in the case of performing the high-temperature annealing process performed as one step of the substrate manufacturing process as described above, the occurrence of the substrate slip can be prevented by using the heat treatment apparatus of the present invention.

The heat treatment apparatus of the present invention can also be applied to a semiconductor device manufacturing process.
In particular, a heat treatment process performed at a relatively high temperature, for example, a thermal oxidation process such as wet oxidation, dry oxidation, hydrogen combustion oxidation (pyrogenic oxidation), HCl oxidation, boron (B), phosphorus (P), arsenic (As ), An antimony (Sb) or other impurity (dopant) is preferably applied to a thermal diffusion process for diffusing the semiconductor thin film.
Even in the case of performing a heat treatment step as one step of such a semiconductor device manufacturing step, the occurrence of slip can be prevented by using the heat treatment apparatus of the present invention.

The schematic perspective view which shows the heat processing apparatus which concerns on embodiment of this invention. Schematic sectional view showing a reactor used in a heat treatment apparatus according to an embodiment of the present invention Schematic longitudinal cross-sectional view which shows the board | substrate support body used for the heat processing apparatus which concerns on embodiment of this invention. Schematic cross-sectional view showing a substrate support used in a heat treatment apparatus according to an embodiment of the present invention Schematic perspective view of a support used in a heat treatment apparatus according to an embodiment of the present invention (first example) Schematic perspective view of a support part used in a heat treatment apparatus according to an embodiment of the present invention (second example)

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Heat processing apparatus 30 Substrate support body 56 Main body part 58 Support part 66 Placement part 68 Substrate 74 2nd recessed part 75 1st recessed part 77 Substrate mounting surface

Claims (17)

In a heat treatment apparatus for heat treatment in a state where the substrate is supported by the substrate support,
The substrate support includes a main body portion and a support portion provided on the main body portion and in contact with the substrate, and the support portion corresponds to a region from an edge of the substrate to a device manufacturing region. A heat treatment apparatus configured to be in contact with a substrate only at a back surface portion. In a heat treatment apparatus for heat treatment in a state where the substrate is supported by the substrate support,
The substrate support includes a main body portion and a support portion that is provided on the main body portion and comes into contact with the substrate, and the support portion is attached to the substrate only in an area of 1.5 to 3 mm from the edge of the substrate. A heat treatment apparatus configured to be in contact with each other. In a heat treatment apparatus for heat treatment in a state where the substrate is supported by the substrate support,
The substrate support body has a main body portion and a support portion provided on the main body portion and in contact with the substrate. The support portion has a ring-shaped member concentric with the substrate or a part of which is cut away. A heat treatment apparatus comprising: a ring-shaped member, wherein the inner diameter of the ring-shaped member or a ring-shaped member partially cut away is 294 mm or more and less than a substrate diameter. The heat treatment apparatus according to claim 1, wherein the support portion is formed of a ring-shaped member concentric with the substrate. 5. The heat treatment apparatus according to claim 4, wherein the support portion is provided with a tapered surface, and the substrate is supported by the tapered surface when the substrate is supported. 5. The heat treatment apparatus according to claim 4, wherein the contact surface of the support portion with the substrate is subjected to mirror finishing with a surface roughness of 0.1 [mu] m or less. 5. The heat treatment apparatus according to claim 4, wherein the body portion is provided with a placement portion for placing a support portion, and the support portion is provided with a recess for fitting with the placement portion of the body portion. Heat treatment equipment. 5. The heat treatment apparatus according to claim 4, wherein the support portion is provided with a recess for avoiding interference with a substrate holding plate for transporting the substrate when the substrate is placed on the support portion. . 5. The heat treatment apparatus according to claim 4, wherein the main body portion is provided with a mounting portion for mounting a support portion, and the mounting portion of the main body portion is fitted on the opposite side of the support portion from the substrate mounting surface. A concave portion for avoiding interference with a substrate holding plate that transports the substrate when the substrate is placed on the support portion on the substrate placement surface side of the support portion. Heat treatment equipment. 5. The heat treatment apparatus according to claim 4, wherein a part of the ring-shaped member is cut out so as to avoid interference with a substrate holding plate that conveys the substrate. 5. The heat treatment apparatus according to claim 4, wherein a component of the main body part and / or the support part is silicon carbide (SiC). 5. The heat treatment apparatus according to claim 4, wherein the substrate support is configured to support a plurality of substrates in a plurality of stages with a gap in a substantially horizontal state. The heat treatment apparatus according to claim 4, wherein the heat treatment is performed at a temperature of 1000 ° C or higher. The heat treatment apparatus according to claim 4, wherein the heat treatment is performed at a temperature of 1350 ° C. or higher. Carrying the substrate into the processing chamber;
A step of supporting the substrate by a support portion configured to come into contact with the substrate only at the back surface portion corresponding to the region from the edge of the substrate to the device manufacturing region;
Heat treatment in a state where the substrate is supported by the support portion;
A step of unloading the substrate after the heat treatment from the processing chamber;
A method for manufacturing a semiconductor device, comprising: Carrying the substrate into the processing chamber;
Supporting the substrate by a support portion configured to contact the substrate only in an area of 1.5 to 3 mm from the edge of the substrate;
Heat treatment in a state where the substrate is supported by the support portion;
A step of unloading the substrate after the heat treatment from the processing chamber;
A method for manufacturing a substrate, comprising: Carrying the substrate into the processing chamber;
A step of supporting the substrate by a ring-shaped member having an inner diameter of 294 mm or more and less than the substrate diameter;
Heat-treating the substrate while being supported by the ring-shaped member;
A step of unloading the substrate after the heat treatment from the processing chamber;
A substrate processing method comprising:

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