KR100960019B1 - Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device and Heating Apparatus - Google Patents

Abstract

Improve the efficiency of substrate processing. The substrate processing apparatus includes a reaction tube for processing a substrate therein and a heating device provided to surround an outer circumference of the reaction tube, and at least a gas introduction tube is disposed on a side surface in an area for processing the substrate in the reaction tube. The heating apparatus includes: an insulator surrounding the reaction tube, an introduction port formed in the heat insulator so as to avoid the gas introduction tube from a lower end of the heating apparatus, the insulator and the reaction tube; The heating element provided between the is provided.

Insulator, gas introduction pipe, gas exhaust pipe

Description

Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device and Heating Apparatus

TECHNICAL FIELD This invention relates to a substrate processing apparatus, the manufacturing method of a semiconductor device, and a heating apparatus. Specifically, It is related with the gas flow form suitable for side flow.

8, the schematic of the process furnace 30 using the conventional reaction tube 10 and the heater 20 which comprise a substrate processing apparatus is shown.

The reaction tube 10 and the heater 20 have a cylindrical shape with a lid on the top. In the reaction tube 10, a boat 16 for holding the wafer W in multiple stages in the vertical direction is provided. In addition, in the reaction tube 10, there is a gas nozzle 11 which is raised from the lower end supplying the processing gas, and an exhaust pipe 12 for discharging the gas in the reaction tube 10 is provided in the reaction tube 10. It is installed at the bottom.

On the other hand, 17 is a manifold for supporting the reaction tube 10, 13 is a seal cap that blocks the opening of the manifold 17, 21 is a heater wire, 22 is a temperature sensor for controlling the heater, 23 The duct for exhausting the space between the heater 20 and the reaction tube 10, 24 is a valve installed in the duct 23, 25 is a radiator, 26 is a blower (blower).

In the above-described conventional processing furnace, most of the processing gas supplied from the gas nozzle 11 is exhausted not through the wafers W but through the periphery of the wafer W having a small conductance, so that the efficiency of wafer processing is improved. There is a problem of being bad.

Therefore, when the gas nozzle 11 is comprised by the multi system nozzle and the film-forming process is performed, it is proposed to improve the flow of a process gas by supplying a process gas from a multi system nozzle to a reaction tube (patent document 1). Japanese Patent Laid-Open No. 2000-68214).

However, even if the gas introduction pipe is constituted by a multi-system gas introduction pipe, there is a problem that the efficiency of substrate processing is poor because there is no change in the gas introduction pipe raised from the lower end.

An object of the present invention is to provide a substrate processing apparatus, a manufacturing method of a semiconductor device, and a heating apparatus that can solve the problems of the prior art described above and improve the efficiency of substrate processing.

According to a first aspect of the present invention, there is provided a reaction tube for processing a substrate therein and a heating device provided to surround an outer circumference of the reaction tube, and at least on a side surface in an area for processing the substrate in the reaction tube. A gas inlet tube is provided, and the heating device includes an insulator surrounding the reaction tube, an inlet formed in the heat insulator so as to avoid the gas inlet tube from a lower end of the heating device, and the insulator. And the substrate processing apparatus provided with the heat generating body provided between the said reaction tube and this is provided.

According to the present invention, the efficiency of substrate processing can be improved.

According to the first aspect of the present invention, there is provided a reaction tube for processing a substrate therein and a heating device provided to surround an outer circumference of the reaction tube, and at least gas is provided on the side surface in the region for processing the substrate in the reaction tube. An introduction tube is provided, and the heating apparatus includes an insulator surrounding the reaction tube, an inlet formed in a spherical shape so as to avoid the gas introduction tube from a lower end of the heating apparatus, and the insulator; The substrate processing apparatus provided with the heat generating body provided between the said reaction tubes and the said reaction tube is provided.

Since a heating element is provided between the heat insulator and the reaction tube of the heating device, the substrate is effectively heated via the reaction tube. When a gas introduction tube is provided on the side surface in the region where the substrate is processed inside the reaction tube, the gas flow supplied from the gas introduction tube into the reaction tube becomes a side flow, and the substrate processing is performed when passing over the heated substrate. Therefore, the efficiency of substrate processing can be improved.

If a gas inlet tube is provided on the side of the reaction tube, the gas inlet tube interferes with the heating device surrounding the outer circumference of the reaction tube. Since it is formed, such a thing disappears. In addition, when the inlet is formed in a spherical shape from the lower end of the heating device, the installation and removal of the reaction tube to the heating device can be facilitated, and heat dissipation from the inside of the heating device to the outside can be suppressed.

According to the second aspect of the present invention, there is provided a cylindrical reaction tube for processing a substrate therein, and a cylindrical heating device provided to surround an outer circumference of the reaction tube, for processing the substrate in the reaction tube. At least a gas introduction tube is provided on a side surface in the region, and the heating device includes a cylindrical heat insulator, an introduction port formed in the heat insulator so as to avoid the gas introduction pipe from a lower end of the heating device, The substrate processing apparatus provided with the heat generating body provided between the said heat insulation body and the said reaction tube is provided.

According to this second aspect, since both the reaction tube and the heating apparatus are cylindrical, in addition to the effect of the first aspect, uniform heating is possible and the efficiency of substrate processing can be further improved.

It is preferable that the said introduction opening is formed in the whole side region located in the said substrate processing area | region. In addition, it is preferable to make the said substrate processing area into a product substrate processing area. In addition, it is preferable that a second heater or a heating heater separate from the heating element is provided on the lower side of the lower end side than the region in which the gas introduction pipe is installed.

If the inlet is formed in the whole lateral side located in the substrate processing region, the substrate processing region can be covered by the side flow. If the substrate processing region is a product substrate processing region, the product substrate processing region can be covered with a side flow. Therefore, the efficiency of substrate processing can be further improved. Moreover, if the 2nd heat insulating material separate from a heat insulating material is provided in the lower end side of a heating apparatus rather than the area | region in which a gas introduction pipe is provided, it can prevent effectively that heat escapes from an introduction port. Moreover, if the heating heater different from the said heat generating body is provided in the lower end side of a heating apparatus rather than the area | region where a gas introduction tube is provided, the gas introduce | transduced from a gas introduction tube can be preheated. Therefore, the efficiency of substrate processing can be further improved.

According to a third aspect of the present invention, there is provided a reaction tube for processing a substrate therein and a heating device provided to surround an outer circumference of the reaction tube, and at least on a side surface of the region for processing the substrate in the reaction tube. A gas inlet tube is provided, and the heating device includes an insulator surrounding the reaction tube, an inlet formed in the heat insulator so as to avoid the gas inlet tube from a lower end of the heating device, and the insulator. And a first heating element provided between the reaction tube and the reaction tube, and a second heating element provided between the introduction port and the gas introduction tube.

Since the first heating element is provided between the heat insulator of the heating device and the reaction tube, the substrate is heated through the reaction tube. When gas is introduced into the reaction tube from the gas introduction tube provided on the side in the region where the substrate is processed inside the reaction tube, the gas flow becomes a side flow, and the substrate treatment is performed when passing over the heated substrate. Therefore, the efficiency of substrate processing can be improved.

In addition, when the inlet is formed of the heat insulator of the heating apparatus, when the substrate treatment is performed, there is a tendency that the heat escapes from the inlet and causes a cold spot, but the second heating element is formed between the inlet and the gas inlet tube. Since is provided, the amount of heat dissipated to the outside from the inlet can be compensated, and the occurrence of a cold spot at the inlet can be suppressed. In addition, the gas introduced from the gas introduction tube can be supplied into the reaction tube after heating at the introduction port. Therefore, the efficiency of substrate processing can be improved.

In addition, when a gas introduction tube is provided on the side of the reaction tube, a problem occurs that the gas introduction tube interferes with the heating device covering the outer circumference of the reaction tube, but the gas introduction tube is introduced to avoid the gas introduction tube in the heat insulator constituting the heating device. Since a sphere is formed, such a thing disappears. In addition, since the inlet is formed in a spherical shape from the lower end of the heating device, the installation and removal of the reaction tube can be facilitated with respect to the heating device, and the amount of heat dissipated from the inlet can be suppressed.

According to the 4th aspect of this invention, it has a cylindrical reaction tube which processes a board | substrate internally, and the cylindrical heating apparatus provided so that the outer periphery of the said reaction tube can be provided, and it processes a board | substrate in the said reaction tube. At least a gas inlet tube is provided at a side surface in the region, and the heating apparatus includes a cylindrical heat insulator, an inlet formed in the heat insulator so as to avoid the gas inlet tube from a lower end of the heating apparatus; There is provided a substrate processing apparatus having a first heating element provided between the heat insulator and the reaction tube, and a second heating element provided between the inlet port and the gas introduction tube.

According to this fourth aspect, the reaction tube and the heating apparatus are cylindrical, and in addition to the effect of the third aspect, uniform heating is possible and the efficiency of substrate processing can be further improved.

Moreover, in the manufacturing method of the semiconductor device processed using the substrate processing apparatus as described in the 1st aspect of this invention, the process of carrying in a board | substrate in the said reaction tube, and introducing gas into a reaction tube from the said gas introduction tube. There is provided a method of manufacturing a semiconductor device having a step of processing a substrate by heating the inside of the reaction tube with the heating element and a step of carrying out the substrate from the inside of the reaction tube. According to this, the substrate heating efficiency can be improved.

Moreover, the manufacturing method of the semiconductor device processed using the substrate processing apparatus as described in the 2nd aspect of this invention WHEREIN: The process of carrying in a board | substrate to the said product board | substrate area | region in the said reaction tube, and gas reacts from the said gas introduction tube. A method of manufacturing a semiconductor device having a step of heating the inside of the reaction tube with the heating element and processing a substrate while introducing into the tube and carrying out the substrate from the inside of the reaction tube is provided. According to this, the substrate heating efficiency can be improved.

Preferably, the first heating element and the second heating element may each be connected to a separate heating source. If the 1st heating element and the said 2nd heating element are respectively connected to the separate heating source, each can be controlled independently. Therefore, control corresponding to the flow of gas in the gas introduction tube and the reaction tube is possible. In addition, the processing gas can be sufficiently preheated to a temperature at which the reaction gas can be reacted, and the substrate processing can be efficiently performed.

Moreover, Preferably, the said 2nd heat generating body should just be provided in plural in parallel in the gas downstream from the gas upstream of the said gas introduction pipe. Thereby, it is possible to heat a gas more densely.

Preferably, a gas exhaust pipe is provided on a side surface of the region in which the substrate is processed in the reaction tube, and the heating device includes a discharge port provided so as to avoid the gas exhaust pipe in a heat insulator, and the discharge port and the gas. The third heating element may be further provided between the exhaust pipe and the exhaust gas.

When the gas in the reaction tube is exhausted from the gas exhaust pipe provided on the side of the reaction tube, not only the gas introduction but also the exhaust flow is a side flow, so that the efficiency of substrate processing can be further improved.

In addition, if the outlet port formed to avoid the gas exhaust pipe is formed in the heat insulator of the heating apparatus, it is easy to cause a problem that the heat escapes from the outlet port and causes a cold spot when the substrate treatment is performed. Since the 3rd heating element is provided in between, the heat dissipation which dissipates to the outside from a discharge port can be compensated, and it can suppress that a cold spot generate | occur | produces in a discharge port. In addition, since the gas exhaust pipe is heated at the outlet, adhesion of by-products in the gas exhaust pipe can be prevented.

Moreover, Preferably, the 3rd heat generating body should just be provided in multiple numbers in parallel from the gas upstream of the said gas exhaust pipe to the gas downstream. As a result, the gas exhaust pipe can be heated more densely.

Preferably, the first heating element and the third heating element may be connected to different heating sources, respectively. If the 1st heating body and the said 3rd heating body are respectively connected to the separate heating source, it can control independently. Therefore, it can control according to the gas flow conditions in a gas exhaust pipe and a reaction tube. In addition, adhesion of by-products in the gas exhaust pipe can be effectively prevented.

Further, preferably, the second heating element may have a faster heat generation rate than the first heating element. When the second heating element is made faster than the heat generation rate of the first heating element, the processing gas can be preheated quickly to a temperature at which it can react, and thus the substrate processing can be performed more efficiently.

Preferably, the second heating element is a lamp heating body, and the first heating element is a resistance heating body. If the second heating element is a lamp heating element and the first heating element is a resistance heating element, the second heating element can be made faster than the heating rate of the first heating element.

In the manufacturing method of the semiconductor device processed using the substrate processing apparatus as described in the 3rd aspect of this invention, The process of carrying in a board | substrate in the said reaction tube, The gas is introduce | transduced into a reaction tube from the said gas introduction tube, A semiconductor device having a step of heating a gas in a gas introduction tube by the second heating element, heating the inside of the reaction tube by the first heating element, and processing a substrate; and a step of carrying out a substrate from the reaction tube. A manufacturing method is provided. According to this, the efficiency of substrate processing can be improved.

In the manufacturing method of the semiconductor device processed using the substrate processing apparatus as described in the 4th aspect of this invention, The process of carrying in a board | substrate in the said reaction tube, The gas is introduce | transduced into a reaction tube from the said gas introduction tube, Processing a substrate while heating a gas in a gas introduction tube by the second heating element, heating the inside of the reaction tube by the first heating element, and heating a gas in the gas exhaust pipe by the third heating element; A manufacturing method of a semiconductor device having a step of carrying out a substrate from the reaction tube is provided. According to this, the efficiency of substrate processing can be improved.

According to a fifth aspect of the present invention, in a heating apparatus used in a semiconductor manufacturing apparatus, at least the side surface of the cylindrical heat insulating member, the heating element provided along the inner wall of the ordinary part of the insulating member, and the region of the heating element. A heating device having an inlet formed in a spherical shape so as to avoid a gas introduction pipe from a lower end of the heating device, and a heating element provided along the cylindrical inner wall of the heat insulator.

By using such a heating apparatus, not only can a reaction tube be easily installed or removed in this heating apparatus, but the quantity of heat of dissipation from an inlet can be controlled, and a reaction tube can be heated easily. Therefore, the efficiency of substrate processing can be improved.

The present invention relates to a substrate processing apparatus, for example, a semiconductor integrated circuit device (semiconductor device), which is related to a semiconductor manufacturing technique, in particular, a heat treatment technique in which a substrate is accommodated in a reaction tube and processed in a state heated by a heating apparatus. It is used for substrate processing equipment used for oxidation treatment, diffusion treatment, and reflow for activating or planarizing carrier after ion implantation, and film formation by annealing and thermal CVD reaction. It is effective to. Moreover, this invention is effective for a heating apparatus in the substrate processing apparatus using the reaction tube (side flow type reaction tube) which enables side flow among the above-mentioned substrate processing apparatuses.

EMBODIMENT OF THE INVENTION Hereinafter, one Embodiment of this invention is described using drawing.

<Configuration of reaction tube of side flow type>

The schematic diagram of the reaction tube 203 of a side flow type is shown in FIG. In FIG. 2, (a) is a top view, (b) is a front view, (c) is a side view common to right and left.

The reaction tube 203 is made of, for example, a heat resistant glass material such as quartz (SiO ₂ ) or silicon carbide (SiC), and a gas introduction tube for introducing gas into the body 205 and the body 205. 230 and a gas exhaust pipe 231 exhausting the inside of the body 205. The body 205 is a vertical shape and has a cylindrical shape in which the upper end is closed and the lower end is opened.

The gas introduction pipe 230 and the gas exhaust pipe 231 can be arbitrarily formed in cross-sectional shape, but have, for example, a flat rectangular parallelepiped shape inside. The gas introduction pipe 230 and the gas exhaust pipe 231 are provided symmetrically on the side surface of the body 205 which is erected vertically so as to face a flat surface in the horizontal direction. The side position of the body 205 in which the gas introduction pipe 230 and the gas exhaust pipe 231 are provided is the center position of the side surface of the body 205, and is an intermediate position in the height direction, and is processed inside the body 205. It is a position which opposes all or a part of one or several wafer 200 to become. The gas introduction pipe 230 and the gas exhaust pipe 231 are horizontally connected to the body 205. The gas introduction pipe 230 and the gas exhaust pipe 231 are welded and connected to the body 205 so that both pipe shafts may be aligned in a straight line.

In addition, the area | region where the wafer inside the fuselage 205 of the reaction tube 203 is processed is called a substrate processing area | region.

Gas flow in the reaction vessel

3, the schematic block diagram of the reaction container 204 using the side flow type reaction tube 203, and the boat 217 accommodated in the reaction container 204 is shown. In Fig. 3, (a) is a plan sectional view, and (b) is a forward sectional view.

The reaction vessel 204 is composed of a reaction tube 203 and a manifold 209. The manifold 209 is formed in the cylindrical shape which opened the upper end and the lower end. The manifold 209 is engaged at the lower end of the reaction tube 203 and is provided to support the reaction tube 203. The process chamber 201 for processing the wafer 200 is formed inside the reaction vessel 204.

In the processing chamber 201, a boat 217 as a substrate holding tool for holding the wafer 200 in multiple stages in the vertical direction is inserted. The bottom opening of the manifold 209 is hermetically closed by the seal cap 219 holding the boat 217 inserted into the processing chamber 201.

By exhausting the processing gas introduced from the gas introduction pipe 230 of the reaction tube 203 from the gas exhaust pipe 231, the flow of the gas in the processing chamber 201 is a side flow as indicated by the arrow. Thereby, the processing gas can be supplied to the wafer 200 from the horizontal direction and exhausted from the horizontal direction, so that the processing gas can be smoothly supplied to the wafer 200.

<Configuration of heater>

4, the schematic block diagram of the heater 206 as a heating apparatus which heats the wafer 200 in the reaction tube 203 is shown. In FIG. 4, (a) is a top view, (b) is a front view, (c) is a side view common to right and left.

The heater 206 is a cylindrical heat insulator 260 whose upper part is closed and the lower part is opened, and an inlet 261 formed in the heat insulator 260 to avoid interference or contact with the gas inlet pipe 230. ) And a discharge port 262 formed to avoid the gas exhaust pipe 231 on the heat insulator 260 on the side opposite to the inlet port 261. The inlet 261 and the outlet 262 formed in the insulator 260 so as to avoid the gas inlet tube 230 and the gas exhaust pipe 231 are all over the side of the insulator 260 positioned in the substrate processing region. It is formed in the whole. In this case, the substrate processing region may be a substrate processing region in which both the side dummy substrate and the product substrate placed on the upper and lower ends of the boat 217 are processed, or in the case of the product substrate processing region in which only the product substrate is processed. have.

Specifically, the inlet 261 formed in the heat insulator 260 to avoid the gas inlet tube 230 is slightly smaller than the center from the lower end of the heat insulator 260 of the gas inlet tube 230, for example. It is formed as a spherical-shaped gas inlet pipe section 261a which has a straight line to the upper side and has a width wider than the thickness of the flat rectangular parallelepiped of the gas inlet pipe 230. In addition, the outlet 262 formed in the heat insulator 260 to avoid the gas exhaust pipe 231 is, for example, from the lower end of the heat insulator 260 to a slightly above the center as in the inlet 261. It is formed as a spherical gas exhaust pipe cutout portion 262a which faces in a straight line and has a width wider than the thickness of the flat rectangular parallelepiped of the gas exhaust pipe 231. Accordingly, when the heater 206 is covered with the reaction tube 203 from above the reaction tube 203, for example, the interference between the gas inlet tube 230 and the gas exhaust pipe 231 having a flat rectangular parallelepiped shape is prevented. 206 may be covered on the outer circumference of the reaction tube 203.

On the other hand, the width of the gas inlet pipe cutout 261a is preferably smaller than the diameter of the reaction tube, and more preferably, the width of the gas introduction tube may be smaller than the diameter of the wafer 200 processed in the reaction tube. .

Further, the width of the gas introduction pipe 230 is preferably such that when the width in the horizontal direction with respect to the substrate processing surface is 1/2 or less with respect to the diameter of the substrate, the gas flowing out of the gas introduction pipe 230 This is good because it can flow to the center of the substrate without reducing the flow rate. More preferably, when the width in the horizontal direction with respect to the substrate processing surface is 1/3 or less with respect to the diameter of the substrate, the gas flowing from the gas introduction pipe 230 can flow to the substrate center without reducing the flow rate. It can be good. More preferably, when the width in the horizontal direction with respect to the substrate processing surface is 1/15 or less with respect to the diameter of the substrate in the reaction tube, the gas flowing out of the gas introduction tube 230 reduces the flow velocity more reliably. It is good because it can flow to the center of the substrate without. What is necessary is just to determine the width | variety of the notch part 261a for gas introduction pipes in accordance with the width | variety of these gas introduction pipes 230. Preferably, even if there is thermal radiation from between the gas inlet 261a for gas inlet tube and the gas inlet tube 230, what is necessary is just a width | variety which does not adversely affect a heat externally.

On the other hand, the width of the gas exhaust pipe cutout portion 262a is preferably smaller than the diameter of the reaction tube, and more preferably smaller than the diameter of the wafer 200 to be processed in the reaction tube. .

Further, the width of the gas exhaust pipe 231 is preferably such that when the width in the horizontal direction with respect to the substrate processing surface is 1/2 or less with respect to the diameter of the substrate, the gas flowing out of the gas introduction pipe 230 flows. Since it can flow to the exhaust pipe 231 through the center of a board | substrate without reducing, it is good. More preferably, when the width in the horizontal direction with respect to the substrate processing surface is 1/3 or less with respect to the diameter of the substrate, the gas flowing out of the gas introduction tube 230 passes through the substrate center without reducing the flow velocity. It can flow to the exhaust pipe 231 to be good. More preferably, when the width in the horizontal direction with respect to the substrate processing surface is 1/15 or less with respect to the diameter of the substrate in the reaction tube, the gas flowing out of the gas introduction tube 230 reduces the flow velocity more reliably. Without passing through the center of the substrate can flow to the exhaust pipe 231 is good. What is necessary is just to determine the width | variety of the gas exhaust pipe notch 262a according to the width | variety of these gas exhaust pipes 231. FIG. Preferably, even if there is heat radiation from between the gas exhaust pipe cutout 262a and the gas exhaust pipe 231, the width may be such that no thermal adverse effects are caused to the outside.

<Internal structure of heater>

5 and 6 show sectional views of the heater 206. 5 is a cross-sectional view taken along the line A-A in FIG. 4 (a), and FIG. 6 is a cross-sectional view taken along the line B-B in FIG. 4 (c).

The heat insulator 260 of the heater 206 is composed of a cylindrical side wall insulator 264 and a circular ceiling insulator 265 that closes the upper portion of the side wall insulator 264.

The heat generating element 263 is provided in this heat insulator 260. The heating element 263 includes a first heating element 266 for heating the reaction tube 203, a second heating element 267 for heating the gas introduction pipe 230, and a third heating element 268 for heating the gas exhaust pipe 231. It consists of.

The heater element wire 266a as the first heating element 266 is provided between the side wall heat insulating material 264 and the reaction tube 203. The heater element wire 266a is formed in a zigzag shape in the vertical direction, and is annularly formed along the inner wall of the side wall heat insulating material 264 of each zone that is divided into zones (four divisions in the illustrated example) in the vertical direction as in the prior art. Is installed.

The side wall heater 267a for gas introduction pipes as the second heat generating element 267 is provided between the gas inlet pipe cutout 261a and the gas introduction pipe 230. The side wall heater 267a for gas introduction pipe is provided along the inner wall of the notch 261a for gas introduction pipe.

The gas exhaust pipe side wall heater 268a as the third heating element 268 is provided between the gas exhaust pipe cutout portion 262a and the gas exhaust pipe 231. The side wall heater 268a for the gas exhaust pipe is installed along the inner wall of the cutout portion 262a for the gas exhaust pipe.

The side wall heating body 267a for gas introduction pipe and the side wall heating body 268a for gas exhaust pipe are densely provided in the inner wall of the notch part near the gas introduction pipe 230 or the gas exhaust pipe 231 at least. It is preferable not only to be provided in the side wall of one side of the gas introduction pipe notch 261a or the gas exhaust pipe notch 262a, but to install in the opposing inner side wall, and the gas introduction pipe notch 261a or the gas exhaust. It is more preferable to provide also in the inner upper wall of the normal notch 262a. By providing in this way, the side wall heating body 267a for gas introduction pipes, and the side wall heating body 268a for gas exhaust pipes are provided over the zone | zone division of the zone of the heater element wire 266a. The power supply 253 for supplying power to the gas inlet pipe side wall heater 267a and the gas exhaust pipe side wall heater 268a through the power control circuit 239a is a power source for supplying power to the heater element wire 266a ( A power supply separate from 252) is used. 238 is a temperature control unit described later.

Moreover, the width | variety of the gas exhaust pipe notch 262a becomes like this. Preferably, the width | variety of the range which the gas inlet pipe side wall heating body 269a can heat the gas inlet pipe 230 is preferable. More preferably, even if the gas inlet pipe sidewall heating element 267a is provided between the gas inlet pipe notch 261a and the gas inlet pipe 230, the gas inlet pipe sidewall heating element 267a and the gas inlet pipe are provided. What is necessary is just to make it the width which does not physically contact with 230.

Moreover, the width | variety of the gas exhaust pipe notch 262a becomes like this. Preferably, the width | variety of the range which the gas exhaust pipe side heating element 268a can heat the gas exhaust pipe 231 substantially may be sufficient. More preferably, the gas exhaust pipe side wall heater 268a and the gas exhaust pipe 231 are provided even if the gas exhaust pipe side heating element 268a is provided between the gas exhaust pipe cutout 262a and the gas exhaust pipe 231. ) May be a width that does not physically contact.

In addition, the side wall heater 267a for gas introduction pipe and the side wall heater 268a for gas exhaust pipe, Preferably, it is preferable to install below the lowest end of the gas introduction pipe 230. Thereby, it is possible to supply more heat wires in the lowermost part which is easy to cool compared with the intermediate part of the gas supply pipe 230 compared with the intermediate part of the gas introduction pipe 230. Preferably, the gas inlet pipe sidewall heating element 267a and / or the gas exhaust pipe sidewall heating element 268a is preferably provided above the upper end of the gas inlet pipe 230. Thereby, many hot wires can be supplied to the uppermost end which is easy to cool compared with the intermediate part of the gas supply line 230. As shown in FIG.

In addition, the side wall heater 267a for gas introduction pipe and the side wall heater 268a for gas exhaust pipe are preferably more dense when zone is divided into the same shape as the zone division of the heater element wire 266a. Temperature can be controlled.

More preferably, the zone division may be performed at the same height as the zone division of the heater element wire 266a. Thereby, it becomes possible to suppress that it becomes difficult to mutual control by heat interference between the side wall heating body 267a for gas introduction pipes, or the side wall heating body 268a for gas exhaust pipes, and the heater element wire 266a. .

<Configuration of Processing>

7 shows a processing furnace 202 formed by inserting a side flow type reaction tube 203 into the heater 206 described above. (a) is a cross-sectional view, (b) is a longitudinal cross-sectional view. The side wall heater 267a for the gas introduction pipe and the side wall heater 268a for the gas exhaust pipe are respectively disposed in the vicinity of the gas introduction pipe 230 and the gas exhaust pipe 231, and the side wall heater 267a for the gas introduction pipe and Since the side wall heating element 268a for the gas exhaust pipe is controlled by a separate power source from the heater element 266a, the amount of heat dissipated to the outside from the gas inlet pipe notch 261a and the gas exhaust pipe notch 262a. The amount of heat equivalent to that can be supplied to the gas introduction pipe 230 and the gas exhaust pipe 231.

<Method for Manufacturing Semiconductor Device Using Substrate Processing Apparatus>

As described above, the substrate processing apparatus of one embodiment of the present invention includes a cylindrical reaction tube 203 for processing a substrate therein and a cylindrical heater 206 provided to surround the outer circumference of the reaction tube 203. In the region in which the wafer 200 is processed inside the reaction tube 203, the gas introduction pipe 230 and the gas exhaust pipe 231 are provided on both sides thereof, and the heater 206 has a cylindrical shape. An insulator 260, an inlet 261 formed in a spherical shape so as to avoid the gas inlet tube 230 from the lower end of the heater 206, and the insulator 260 and the reaction tube in the insulator 260. The first heating element 266 provided between the 203 and the second heating element 267 provided between the inlet 261 and the gas inlet tube 230, the outlet port 262, and the gas. And a third heating element 268 provided between the exhaust pipe 231 and the exhaust pipe 231.

In manufacturing the semiconductor device using the substrate processing apparatus, the gas exhaust pipe (while the wafer 200 is introduced into the reaction tube 203 and gas is introduced into the reaction tube 203 from the gas introduction tube 230). 231). At this time, the gas in the gas introduction pipe 230 is heated by the second heating element 267, and the gas exhaust pipe 231 is heated by the third heating element 268. The inside of the reaction tube 203 is heated by the first heating element 266 to process the wafer 200, and after the treatment, the wafer 200 is carried out from the reaction tube 203.

<Effect of embodiment>

As described above, according to the present embodiment, there are one or more effects as follows.

(1) By providing the gas introduction pipe 230 and the gas exhaust pipe 231 on both sides of the reaction pipe 203, the gas introduction pipe 230 is introduced from the gas exhaust pipe 231 while introducing gas into the reaction pipe 203. When the gas is exhausted, the gas flow becomes a side flow, so that the efficiency of substrate processing can be improved.

(2) When the gas introduction pipe cutout portion 261a formed to avoid the gas introduction pipe 230 is formed in the heat insulator 260 of the heater 206, when the substrate treatment is performed, the gas feed pipe cutout portion ( It is easy to cause a problem that the heat escapes from 261a and a cold spot occurs, but the gas inlet pipe side wall heater 267a is provided between the gas inlet pipe 261a and the gas inlet pipe 230. Even if the heater 206 has a notch 261a for the gas introduction pipe 230, the amount of heat dissipated to the outside from the notch 261a for the gas introduction pipe can be compensated for, and the notch 261a for the gas introduction pipe 261a is provided. The occurrence of cold spots can be suppressed. In addition, when the gas exhaust pipe cutout 262a formed to avoid the gas exhaust pipe 231 is formed in the heat insulator 260 of the heater 206, when the substrate is processed, the gas exhaust pipe cutout 262a is formed. It is easy to cause a problem that a cold spot occurs due to heat dissipation. However, since the gas exhaust pipe side wall heater 268a is provided between the gas exhaust pipe cutout portion 262a and the gas exhaust pipe 231, the heater ( Even if the cutout portion 262a for the gas exhaust pipe 231 is provided in the 206, the amount of heat dissipated to the outside from the cutout portion 262a for the gas exhaust pipe can be compensated for, and the cold spot on the cutout portion 262a for the gas exhaust pipe can be compensated for. Can be suppressed from occurring. Therefore, the efficiency of substrate processing can be improved.

(3) By providing the gas inlet pipe side wall heater 267a, the gas inlet pipe side wall heater 267a heats the gas inlet pipe 230, so that the process gas can be sufficiently preheated to a temperature at which it can react. The wafer process can be performed efficiently. Moreover, when using a liquid raw material and the raw material which is easy to liquefy at normal temperature and normal pressure as a gas raw material, liquefaction in the gas introduction pipe 230 can be prevented.

(4) By providing the side wall heater 268a for the gas exhaust pipe, the side wall heater 268a for the gas exhaust pipe heats the gas exhaust pipe 231, so that adhesion of the by-products in the gas exhaust pipe 231 can be prevented. There is a number.

<Other embodiments>

As mentioned above, although one Embodiment of this invention was described in detail, this invention is not limited to one Embodiment mentioned above.

For example, when gas is supplied into the reaction tube by operating a gas nozzle or the like from the lower end inside the heater, the gas is heated in the gas nozzle, and a plurality of layers stacked on the height of the gas nozzle or the substrate processing region in the reaction tube. Depending on the position of the wafer, the problem that the temperature of the gas varies is likely to occur. However, in the present embodiment, a cutout portion is formed over the entire lateral side of the heater located in the substrate processing region in the reaction tube, and the tube axes of the gas introduction pipe and the gas exhaust pipe inserted into the cutout portion are provided horizontally with respect to the wafer. have. Therefore, the temperature of the processing gas can be made uniform among the plurality of wafer surfaces to be processed at one time. In addition, in this embodiment, since the gas introduction pipe and the gas exhaust pipe of a reaction tube are horizontally connected to the side surface of a vertical type | mold body, and are long to the side like a wing spread, the gas flow becomes laminar flow, The flow can be in one direction. In addition, since the amount of gas introduced between the wafers becomes uniform, a gas having a uniform gas concentration and a gas velocity can be sent to each wafer, thereby improving the uniformity between the wafer surfaces and the in-plane film thickness. .

Moreover, in one embodiment mentioned above, although the example of the side flow type reaction tube 203 in which the gas introduction pipe 230 and the gas exhaust pipe 231 are provided in the fuselage 205 was demonstrated, this invention is It is not limited, but it is applicable also to the reaction tube of the side flow type in which either the gas introduction pipe and the gas exhaust pipe are provided. In this case, when only the gas inlet tube is provided in the reaction tube 203, the gas exhaust pipe may be provided in the manifold 209 supporting the reaction tube 203 (see, for example, FIG. 8). In addition, when only the gas exhaust pipe 231 is provided in the reaction tube 203, the gas introduction pipe may be provided in the manifold 209 supporting the reaction tube 203 (for example, see FIG. 8). .

In addition, in one embodiment mentioned above, although the kind of the heating element 263 is not mentioned, electric power is supplied to the heater element wire 266a, the side wall heating body 267a for gas introduction pipes, and the side wall heating body 268a for gas exhaust pipes. If the power supplies 252 and 253 to be supplied are separate power supplies, a heating body similar to the heater element wire 266a, the gas inlet pipe side wall heater 267a, and the gas exhaust pipe side wall heater 268a may be used. In this case, it is preferable to make a heating body into a resistance heating body, a lamp heating body, or an induction heating coil, for example. Moreover, a separate kind of heating body may be sufficient. In particular, in the heating body, for example, the heater element wire 266a is made of a resistance heating body, for example, made of molybdenum silicide (MoSi ₂ ), which can be heated at a high temperature at a high speed, and the side wall heating body 267a for gas inlet pipe is formed. And the side wall heater 268a for gas exhaust pipe are easily dissipated due to heat influence from the outside, and therefore, it is preferable to use a lamp heater, for example, an infrared lamp, capable of increasing the temperature-lowering temperature at a higher speed.

In addition, in this embodiment, although the power supply which supplies electric power to the heater element wire 266a, the side wall heating body 267a for gas inlet pipes, and the side wall heating body 268a for gas exhaust pipes was made into a separate power supply, it used as a separate power supply, for example. If not, the power control circuit 239a may be a separate circuit. More preferably, the second heating element and the third heating element may be separately provided with power suppression circuits so that the second heating element and the third heating element can be controlled independently.

The heating source of the present invention is constituted by the above-described power control circuit and power source.

In addition, for example, in one embodiment of the above-mentioned reaction furnace, there are two notches on the opposite side of the heater, the gas introduction pipe and the gas exhaust pipe of the reaction tube are inserted in the notches, and the inserted gas The case where nothing was provided below the inlet pipe and the gas exhaust pipe, and the flaw was left open was described. However, according to another embodiment of the present invention, a second heat insulator separate from the heat insulator, or a second heat insulator and the first heat generating body, on the lower end side of the heater than the region where the inserted gas inlet pipe or the gas exhaust pipe is inserted. May be provided with a separate heating element (hereinafter referred to as a separate heat insulator). In this case, the separate heat insulating material or the like can be detached from the gas introduction pipe or the gas exhaust pipe so as not to interfere with the insertion into the cutout portion.

Another embodiment of the reactor including the above-described separate heat insulating material and the like in the heater will be described with reference to FIGS. 9 to 12.

Fig. 9 is a longitudinal sectional view of a reaction furnace in which a side flow type reaction tube is placed in a heater and a separate heat insulating material or the like is installed in the heater. Is to install only the second insulating material.

As shown in FIG. 9A, the gas introduction pipe 230 and the gas exhaust pipe 231 are provided in the gas introduction pipe cutout 261a and the gas exhaust pipe cutout 262a on the opposite side of the heater 206. The second heat insulating material 270 which is separate from the heat insulating body 260 is provided in the lower end side of the heater 206 rather than the area | region into which it inserts. The second heat insulator 270 is a heat insulating material 272 for an exhaust side notch that blocks the lower end of the gas inlet pipe notch 261a and a lower end of the gas exhaust pipe notch 262a. It consists of Moreover, the 4th heat generating body 273 and the 5th heat generating body 274 separate from the 1st heat generating body 266 are respectively provided in the heat insulation material 271 for introduction side notches, and the heat insulation material 272 for exhaust side notches. The heater element wire 273a for the introduction side heat insulating material as the fourth heating element 273 is provided along the inner wall facing the reaction tube 203 of the heat insulation material for the introduction side cutout 271. The heater element wire 274a for the exhaust side heat insulating material as the fifth heating element 274 is provided along the inner wall facing the reaction tube 203 of the heat insulation material 272 for the exhaust side notch. Here, the heat insulation material for inlet side notches 271a having the heater element wires 273a for the inlet insulation material and the heat insulation material 272 for the exhaust side notches having the heater element wires 274a for the exhaust side insulation material are referred to as a heat insulation material with heater 270a. do.

Installing such a heat insulating material 270a with a heater includes attaching the reaction tube 203 to the heater 206 and attaching the gas introduction pipe to the gas inlet pipe notch 261a and the gas exhaust pipe notch 262a. After inserting the 230 and the gas exhaust pipe 231, the heater is attached to the gas inlet pipe notch 261a and the gas exhaust pipe notch 262a below the gas inlet pipe 230 and the gas exhaust pipe 270, respectively. Insulation material 270a is provided. The heat insulating material 270a with a heater can employ | adopt the method of being inserted as if one side was made into iron parts, and the other side was made into recesses so that installation and removal are possible.

The reaction furnace shown in FIG. 9 (b) differs from the reaction furnace shown in FIG. 9 (a) by the heater element wire for the introduction side heat insulating material in the heat insulating material 271 for the inlet side cutout and the heat insulating material 272 for the exhaust side cutout. 273a) and the heater element wire 274a for the exhaust side heat insulating material are not provided. The heat insulating material which does not have these heater wires is called the heat insulating material 270b without a heater with respect to the heat insulating material 270a with a heater.

FIG. 10 is a separate heat insulating material or the like provided in the schematic configuration diagram of the heater. As for the heater 206 shown in FIG. 10, the schematic block diagram and basic structure of the heater of FIG. 4 demonstrated previously are the same. The difference between the heater shown in FIG. 10 and the heater of FIG. 4 is that the second heat insulator 270 is newly installed, the arrow cross section of the DD line is added, the arrow cross section of the BB line is changed to the EE line arrow cross section, It is the point which the AA line arrow cross section code replaced with the CC line arrow cross section code.

FIG. 11: is sectional drawing of an arrow shown in FIG. 10, and shows the heater which provided the 2nd heat insulating material and another heat generating body. FIG. FIG. 11A is a cross-sectional view taken along arrow C-C of FIG. 10, FIG. 11B is a cross-sectional view taken along arrow D-D of FIG. 10, and FIG. 11 (c) is a cross-sectional view taken along arrow E-E of FIG. As can be seen from these, an introduction side notch for preventing the gas inlet pipe notch 261a and the gas exhaust pipe notch 262a formed on the sidewall heat insulating material 264 of the first heat insulator 260 to prevent their downwards. The auxiliary insulation material 271 and the heat insulation material 272 for exhaust side notches are provided, respectively. For introduction side insulation which is the 4th heating element 273 to the insulator for insulation side 271 and the insulation for insulation side 272 which blocked the gas inlet tube notch 261a, the gas exhaust pipe notch 262a, respectively. The heater element wires 274a for the exhaust side heat insulating material, which are the heater element wires 273a and the fifth heating element 274, are provided. As a result, a heater element wire 266a which is the first heating element 266 is provided between the side wall heat insulating material 264 and the reaction tube 203, and in addition to the first heating element 266, a heater that is a separate heating element. Element wires 273a and 274a are provided between the second heat insulating material 270 and the reaction tube 203.

FIG. 12: is a sectional drawing of the arrow shown in FIG. 10, and shows the heater provided with the heat insulating material 270b without a heater. The difference between the heater shown in FIG. 12 and the heater shown in FIG. 11 is that the heater element wires 273a for the inlet-side insulation material and the exhaust-side insulation material are applied to the insulator 271 for the inlet side cutout and the insulator 272 for the exhaust side. The heater element wire 274a is not provided.

As described above, in another embodiment, a heat insulating material with a heater or a heat insulating material without a heater is provided in the lower portion of the gas introduction pipe and the gas exhaust pipe, and the advantages thereof are as follows. In other words, a clearance is required between the upper and lower ends of the heater notch and the reaction tube for desorption, and heat escapes from the gap. However, in another embodiment, when the gas introduction pipe and the gas exhaust pipe are inserted, the gas introduction pipe and the gas exhaust pipe are biased above the cutout portion, and a heater-free heat insulating material is provided in the cutout portion below the gas introduction pipe and the gas exhaust pipe. The upper and lower portions of the notched portion of the heater can be prevented, and heat can escape effectively from the lower and upper portions of the heater notched portion. Moreover, if it changes into the heat insulating material without a heater, and it is set as the heat insulating material with a heater, heat dissipation content can be caught by the heating from heater element wires 273a and 274a. On the other hand, in another embodiment described above, a heat insulating material with a heater or a heat insulating material without a heater is placed below the gas introduction pipe and the gas exhaust pipe, but any one of the gas introduction pipe or the gas exhaust pipe may be disposed below.

Preferably, as shown in FIG. 13, the gas introduction pipe side wall heater 267a may be provided in a plurality of parallel arrangements on the gas downstream side over the gas upstream side of the gas introduction pipe 230. More preferably, the plurality of gas inlet pipe side wall heaters 267a are controlled independently of each other, so that more precise control is possible.

More preferably, the gas inlet pipe side wall heating element 267a is divided into a plurality of zones from the gas upstream side to the gas downstream side of the gas inlet tube 230 so as to be controlled independently of each other.

In particular, the side wall heater 267a for the gas introduction pipe is effective by being sufficiently heated in advance before going to and reaching the wafer 200 when the heating temperature is the same as that of the reaction chamber, but the reaction chamber of the gas introduction pipe 230 is effective. At the connection portion with 203, a sealing member having a low heat resistance temperature is provided. For this reason, it is preferable to make the temperature of the said gas introduction line 232 side lower than the temperature of the said reaction tube 203 side in the several side wall heating body 267a for gas introduction tubes. Thereby, the gas of the gas introduction pipe 230 can be preheated effectively, without degrading a sealing member.

On the other hand, preferably, as shown in FIG. 13, the gas exhaust pipe side wall heating body 268a may be provided in multiple arrangement in parallel over the gas downstream side rather than the gas upstream side of the gas exhaust pipe 231. FIG. More preferably, the plurality of gas exhaust pipe side wall heating bodies 268a are controlled independently, whereby more precise control is possible. More preferably, the gas exhaust pipe side wall heating element 268a is divided into a plurality of zones from the gas upstream side to the gas downstream side of the gas introduction pipe 230 so as to be controlled independently of each other. have. In particular, the side wall heating element 268a for the gas exhaust pipe needs to set the heating temperature of the gas exhaust pipe 231 lower than that of the reaction tube. However, a sudden decrease in temperature adversely affects the temperature control of the reaction chamber. In this regard, a sealing member having a low heat resistance temperature is provided at the connection portion of the gas exhaust pipe 231 with the gas exhaust line 231a on the downstream side opposite to the connection side with the reaction tube 203. For this reason, what is necessary is just to make the temperature of the said gas exhaust line 231a side lower than the temperature of the said reaction tube 203 side in a plurality of gas exhaust pipe side wall heating body 268a. As a result, it is possible to effectively heat the gas flowing in the gas exhaust pipe 231 and the gas exhaust pipe 231 without deteriorating the sealing member.

<Description of Example of Substrate Processing Apparatus to which the Processing Furnace of the Present Embodiment is Applied>

FIG. 1 is a schematic configuration diagram of a substrate processing apparatus processing furnace 202, which is suitably used in one embodiment of the present invention, and is shown as a longitudinal sectional view.

As shown in FIG. 1, the treatment furnace 202 has a heater 206 as a heating device. The heater 206 has a cylindrical shape and is vertically supported by the heater base 251 as the retaining plate. The heater 206 has a cylindrical heat insulator 260.

On the side surface of the heat insulator 260 of the heater 206, a gas inlet pipe notch 261a serving as an introduction port is formed so as to avoid the gas inlet pipe 230. In addition, the gas exhaust pipe cutout portion 262a is formed as a discharge port to avoid the gas exhaust pipe 231.

In addition, a heater element wire 266a serving as a first heating element is provided between the heater 206 and the reaction tube 203. A gas introduction tube side wall heating element 267a, which is a second heating element, is provided between the gas introduction tube notch 261a and the gas introduction tube 230. Further, a gas exhaust pipe side wall heater 268a serving as a third heating element is provided between the gas exhaust pipe cutout portion 262a and the gas exhaust pipe 231.

Inside the heater 206, a reaction tube 203 is disposed concentrically with the heater 206. The reaction tube 203 is made of a heat resistant material such as quartz (SiO ₂ ) or silicon carbide (SiC), for example, and is formed in a cylindrical shape in which the upper end is closed and the lower end is opened. The processing chamber 201 is formed in the cylindrical hollow part of the reaction tube 203, and it is comprised so that the wafer 200 as a board | substrate can be accommodated by the boat 217 mentioned later in the state aligned vertically by multistage. have.

Below the reaction tube 203, the manifold 209 is disposed concentrically with the reaction tube 203. The manifold 209 is made of, for example, stainless steel, and is formed in a cylindrical shape with an upper end and a lower end opened. The manifold 209 is engaged with the reaction tube 203 and is provided to support this. On the other hand, an O-ring 220a as a seal member is provided between the manifold 209 and the reaction tube 203. By the manifold 209 being supported by the heater base 251, the reaction tube 203 is in the state installed vertically. The reaction vessel is formed by the reaction tube 203 and the manifold 209.

The gas introduction tube 230 is connected to the side surface of the reaction tube 203 so as to communicate with the processing chamber 201. The gas introduction line 232 is connected to the upstream side of the gas introduction pipe 230 opposite to the connection side with the reaction tube 203 via the connection part which has a sealing member. The gas introduction line 232 is connected to a processing gas supply source or an inert gas supply source (not shown) via an MFC (mass flow controller) 241 serving as a gas flow rate controller. The gas flow rate control unit 235 is electrically connected to the MFC 241, and is configured to be controlled at a predetermined timing so that the flow rate of the gas to be supplied is a predetermined amount.

The gas exhaust pipe 231 which exhausts the atmosphere in the process chamber 201 is provided in the side opposite to the connection side of the gas introduction pipe 230 of the side surface of the reaction tube 203. The gas exhaust line 231a is connected to the downstream side of the gas exhaust pipe 231 opposite to the connection side with the reaction tube 203 via the connection part which has a sealing member. A vacuum exhaust device 246 such as a vacuum pump is connected to the gas exhaust line 231a via a pressure sensor 245 as a pressure detector and a pressure adjusting device 242, and a pressure in the process chamber 201 is predetermined. It is configured to evacuate to a pressure (vacuum degree). The pressure control unit 236 is electrically connected to the pressure adjusting device 242 and the pressure sensor 245, and the pressure control unit 236 is based on the pressure detected by the pressure sensor 245. It is configured to control at a predetermined timing so that the pressure in the processing chamber 201 becomes a predetermined pressure.

The gas introduction pipe 230 and the gas exhaust pipe 231 provided in the reaction tube 203 are made of a heat resistant material such as quartz (SiO ₂ ) or silicon carbide (SiC), for example, similarly to the reaction tube 203. .

Below the manifold 209, a seal cap 219 is provided as a furnace tool individual that can close the lower end opening of the manifold 209 in an airtight manner. The seal cap 219 is abutted on the lower end of the manifold 209 from the lower side in the vertical direction. The seal cap 219 is made of metal such as stainless steel, for example, and is formed in a disk shape. On the upper surface of the seal cap 219, an O-ring 220b as a seal member that abuts against the lower end of the manifold 209 is provided. On the side opposite to the processing chamber 201 of the seal cap 219, a rotation mechanism 254 for rotating the boat is provided. The rotating shaft 255 of the rotating mechanism 254 penetrates the seal cap 219 and is connected to the boat 217 described later, and is configured to rotate the wafer 200 by rotating the boat 217. The seal cap 219 is configured to be lifted in the vertical direction by a boat elevator 115 serving as a lift mechanism vertically installed outside the reaction tube 203, thereby moving the boat 217 to the process chamber 201. It is supposed to be able to bring in and out. The drive control part 237 is electrically connected to the rotating mechanism 254 and the boat elevator 115, and is comprised so that it may control by predetermined timing so that predetermined | prescribed operation | movement may be performed.

The boat 217 as the substrate holding tool is made of, for example, a heat resistant material such as quartz or silicon carbide, and is configured to hold the plurality of wafers 200 in a horizontal posture and in a state centered with each other to hold them in multiple stages. have. On the other hand, in the lower part of the boat 217, the heat insulation board 216 as a heat insulation member made into the disk shape which consists of heat-resistant materials, such as quartz and silicon carbide, for example, is arrange | positioned in multiple numbers by multiple stages in a horizontal attitude | position, and the heater 206 The heat from the structure is configured to be less likely to be transmitted to the manifold 209 side.

In the reaction tube 203, the temperature sensors 207a and 207b as the temperature detectors each have a wafer perpendicular to the flow of the gas ejected from the gas introduction tube 230 to the gas exhaust pipe 231. It is provided in the position which opposes 200. The temperature control part 238 is electrically connected to the heater 206 and the temperature sensor 207, and adjusts the energization state with respect to the 1st heating element based on the temperature information detected by the temperature sensor 207 (processing chamber ( It is configured to control at a predetermined timing so that the temperature in 201) becomes a predetermined temperature distribution.

In the reaction tube 203, a temperature sensor B as a temperature detector is provided between the jet port O of the gas introduction tube 230 and the wafer 200. The temperature control part 238 is electrically connected to the side wall heating body 267a for gas inlet pipes, and the temperature sensor B, and based on the temperature information detected by the temperature sensor B, the side wall heating body for gas inlet pipes ( By adjusting the energization state with respect to 267a, it is comprised so that the temperature in the gas introduction pipe 230 may be controlled by predetermined timing so that it may become predetermined temperature.

In the reaction tube 203, a temperature sensor B 'serving as a temperature detector is provided between the discharge port P of the gas exhaust pipe 231 and the wafer 200. The temperature control part 238 is electrically connected to the side wall heating body 268a for gas exhaust pipes, and the temperature sensor B ', and the side wall heating for gas exhaust pipes is based on the temperature information detected by the temperature sensor B'. By adjusting the energization state with respect to the sieve 268a, it is comprised so that it may control by predetermined timing so that the temperature in the gas exhaust pipe 231 may become predetermined temperature.

The temperature control part 238 is comprised so that the above-mentioned heater element wire 266a, the side wall heating body 267a for gas introduction pipes, and the side wall heating body 268a for gas exhaust pipes may be controlled by separate systems, respectively.

On the other hand, as long as the temperature in the gas introduction pipe 230 and the gas exhaust pipe 231 can be controlled, the temperature sensors B and B 'may or may not be provided. Preferably, the position shown in FIG. 7A, between the wafer 200 and the jet port O of the gas introduction pipe 230, and between the wafer 200 and the discharge port P of the gas exhaust pipe 231. Install it. As a result, the wafer (from the jet port O is formed as an extension line of the center line between the two gas inlet pipe side wall heaters 267a at a position easily separated from the first to third heating elements and becoming a cold spot). The cold spot can be eliminated by controlling the temperature at the position at the side of the wafer 200 or at the position at the side of the wafer 200 rather than the discharge port P as an extension line of the center line between the two gas exhaust pipe side wall heaters 268a. On the gas inlet pipe 230 side, the amount of in-plane deviation can be reduced by sufficient preheating, and on the gas exhaust pipe 231 side, the exhaust wall inner wall temperature can be increased, and the effect of preventing byproduct adhesion can be obtained. have.

The gas flow rate control unit 235, the pressure control unit 236, the drive control unit 237, and the temperature control unit 238 constitute an operation unit and an input / output unit, and are electrically connected to a main control unit 239 that controls the entire substrate processing apparatus. have. These gas flow rate control part 235, the pressure control part 236, the drive control part 237, the temperature control part 238, and the main control part 239 are comprised as the controller 240. The power control circuit 239a for controlling the above-described heating element 263 is provided inside the main controller 239.

On the other hand, in the embodiment of FIG. 1, the reaction tube 203 is supported by the manifold 209, but the temperature sensor 207 is taken out of the seal cap 219 without taking out the temperature sensor 207 from the manifold 209. In this case, the manifold 209 may be omitted. In this case, the reaction tube 203 is supported by the heater base 251. In addition, the lower end opening of the reaction tube 203 is hermetically closed by the seal cap 219 supporting the boat 217.

<Method of Forming Thin Film Using Process Furnace>

Next, a method of forming a thin film on the wafer 200 by the CVD method will be described as one step of the manufacturing process of the semiconductor device using the processing furnace 202 according to the above configuration. In the following description, the operation of each part constituting the substrate processing apparatus is controlled by the controller 240.

<Process to bring in board>

When the plurality of wafers 200 are charged to the boat 217, as shown in FIG. 1, the boat 217 holding the plurality of wafers 200 is transferred to the boat elevator 115. It is lifted up by the boat and is loaded into the process chamber 201. In this state, the seal cap 219 seals the lower end of the manifold 209 via the O-ring 220b.

<Vacuum exhaust process>

The evacuation apparatus 246 evacuates so that the process chamber 201 may have a predetermined pressure (vacuum degree). At this time, the pressure in the processing chamber 201 is measured by the pressure sensor 245, and the pressure adjusting device 242 is feedback controlled based on the measured pressure. In addition, the first heating element 266 is heated based on the temperature information detected by the temperature sensors 207a and 207b so that the processing chamber 201 is at a predetermined temperature. The gas introduction pipe 230 is heated by the gas introduction pipe side wall heater 267a based on the temperature information detected by the temperature sensor B so that the gas introduction pipe 230 reaches a predetermined temperature. At the same time, the gas exhaust pipe 231 is heated by the gas exhaust pipe side wall heater 268a based on the temperature information detected by the temperature sensor B 'so that the gas exhaust pipe 231 is at a predetermined temperature. At this time, the energization state with respect to the heater 206 is feedback-controlled based on the temperature information detected by the temperature sensor 207 so that the process chamber 201 may become predetermined temperature distribution. Subsequently, the boat 217 is rotated and the wafer 200 is rotated by the rotating mechanism 254.

<Step of introducing gas into reaction tube, process of treating substrate>

Subsequently, the gas supplied from the processing gas supply source and controlled to be a predetermined flow rate in the MFC 241 is introduced into the processing chamber 201 from the gas introduction pipe 230. The introduced gas passes through the process chamber 201 and is exhausted from the gas exhaust pipe 231. The gas is in contact with the surface of the wafer 200 as it passes through the process chamber 201, and a thin film is deposited on the surface of the wafer 200 by thermal CVD reaction.

<Atmospheric pressure return process>

When the preset processing time elapses, the inert gas is supplied from the inert gas supply source, the process chamber 201 is replaced with the inert gas, and the pressure in the process chamber 201 is returned to the normal pressure.

<Boat Unload, Wafer Discharge>

Thereafter, the seal cap 219 is lowered by the boat elevator 115, the lower end of the manifold 209 is opened, and the manifold is held in the state in which the processed wafer 200 is held by the boat 217. The boat is unloaded to the outside of the reaction tube 203 from the bottom of 209. Thereafter, the processed wafer 200 is discharged from the boat 217.

<Example of processing condition>

On the other hand, as an example, as processing conditions when processing a wafer in the processing furnace of this embodiment, in the formation of a silicon nitride (Si ₃ N ₄ ) film, the processing pressure is 10-100 Pa, and the gas seed is _{DCS (dichloro silane, SiH 2 Cl} 2) gas, ammonia gas (NH _3), the gas supply flow rate, DCS 100-300 sccm, NH _{3 is} illustrated a 300-1000 sccm. Moreover, the process temperature in the reaction tube 203 heated by the heater element wire 266a is 500-780, and the temperature in the gas introduction tube 230 heated by the side wall heating body 267a for gas inlet pipes is 150 from a process temperature. Phosphorus 550-780 and the temperature of the gas exhaust pipe 231 heated by the side wall heating element 268a for the gas exhaust pipe are 550-780 to 150 which are processing temperatures.

Wafer processing is achieved by keeping each processing condition constant at a value within each range.

<Effect of Example>

When the wafer in the side flow type reaction tube is heated using the heater 206 having the above-described structure, the gas introduction tube 230 and the gas introduction tube cutout portion 261a for the gas exhaust pipe 231 are provided in the heater 206. ), Even if there are the gas exhaust pipe cutouts 262a, it is possible to suppress the occurrence of cold spots in the cutouts. Therefore, the efficiency of wafer processing can be improved.

1 is a schematic configuration diagram of a processing furnace of a substrate processing apparatus in an embodiment of the present invention.

2 is a schematic configuration diagram of a reaction tube of a side flow type according to one embodiment of the present invention.

3 is a schematic configuration diagram of a reaction vessel using a side flow type reaction tube according to one embodiment of the present invention.

4 is a schematic configuration diagram of a heater that heats a wafer in a side flow type reaction tube in one embodiment of the present invention.

Fig. 5 is a cross-sectional view in the A-A direction of the heater shown in Fig. 4 in one embodiment of the present invention.

6 is a B-B direction cross-sectional view of the heater shown in FIG. 4 in one embodiment of the present invention.

7 is a cross-sectional view of a reactor in which a side flow type reaction tube is assembled in a heater according to one embodiment of the present invention.

8 is a schematic configuration diagram of a treatment furnace using a reaction tube and a heater of a conventional example.

9 is a cross-sectional view of a reactor according to still another embodiment of the present invention, after the side flow type reaction tube is assembled in the heater, and a separate heat insulating material is installed in the heater.

FIG. 10 is a view in which a separate heat insulating material or the like is provided in a schematic configuration diagram of a heater according to still another embodiment of the present invention. FIG.

FIG. 11 is a view showing a heater provided with a second heat insulating material and a separate heating element in the arrow direction cross-sectional view shown in FIG. 10. FIG.

FIG. 12 is a view showing a heater in which a heat insulating material without a heater is provided in an arrow sectional view shown in FIG. 10. FIG.

Fig. 13 is a cross-sectional view of a reactor in which a side flow type reaction tube is assembled in a heater according to another embodiment of the present invention.

<Code description>

200: wafer (substrate) 203: reaction tube

206: heater (heating device) 230: gas introduction pipe

261: inlet 261a: cutout for the gas inlet pipe

262: outlet 262a: cutout for gas exhaust pipe

263: heating element 264: side wall insulation

265 ceiling insulation 266 first heating element

266a: heater element 267: second heating element

267a: side wall heating element for gas introduction pipe 268: third heating element

268a: side wall heater for gas exhaust pipe 270: second heat insulating material

270a: Insulation material with heater 270b: Insulation material without heater

271: insulation for inlet side notch 272: insulation for exhaust side notch

273: 4th heating element 273a: heater element wire for insulated insulation

274: Fifth heating element 274a: Heater element for exhaust-side insulation

Claims (18)

A reaction tube for processing the substrate therein; And a heating device provided to surround the outer circumference of the reaction tube, In the area | region which processes a board | substrate in the said reaction tube, the gas introduction tube which introduces gas into the said reaction tube is provided in the reaction tube side surface, The heating device, An insulator surrounding the reaction tube, an inlet formed in a spherical shape so as to avoid the gas inlet tube from the lower end of the heating apparatus, and provided between the insulator and the reaction tube. A substrate processing apparatus comprising a heating element. The substrate processing apparatus according to claim 1, wherein the introduction port is formed in a lateral entire region located in the substrate processing region. delete 2. A heating heater separate from the second insulator or the heating element, which is separate from the insulator, is provided on the lower end side of the region in which the gas introduction pipe is installed. Substrate processing apparatus. A reaction tube for processing the substrate therein; And a heating device provided to surround the outer circumference of the reaction tube, In the region for processing the substrate inside the reaction tube, a gas introduction tube is provided on the side surface, The heating device, An insulator surrounding the reaction tube, an inlet formed in a spherical shape so as to avoid the gas inlet tube from the lower end of the heating apparatus, and provided between the insulator and the reaction tube. And a second heating element provided between the first heating element and the inlet and the gas inlet tube. Bringing a substrate into a reaction tube provided to surround the outer circumference by a heating device; In the heating apparatus, an inlet formed in a spherical shape from a lower end of the heating apparatus to a heat insulator surrounding the reaction tube, and on the side surface of the reaction tube in a region in which the substrate is processed inside the reaction tube. The gas is introduced into the reaction tube from the gas introduction tube in the state where the gas introduction tube is installed, and the inside of the reaction tube is heated by the heating element provided between the heat insulator and the reaction tube to process the substrate. Fair, Process of carrying out a board | substrate from the said reaction tube Method for manufacturing a semiconductor device comprising a. delete 6. The substrate processing apparatus of claim 5, wherein the first heating element and the second heating element are respectively connected to a heating source separately. The substrate processing apparatus according to claim 5, wherein a plurality of the second heating elements are provided in parallel from the gas upstream side to the gas downstream side of the gas introduction pipe. The gas exhaust pipe is provided in the side surface in the area | region which processes a board | substrate in the said reaction tube, The said heating apparatus is a discharge port provided so that the said gas exhaust pipe may be avoided in the said heat insulation body, And a third heating element provided between the gas exhaust pipes. The substrate processing apparatus according to claim 10, wherein the first heating element and the third heating element are connected to separate heating sources, respectively. The substrate processing apparatus of claim 5, wherein the second heating element has a faster heat generation rate than the first heating element. 6. The substrate processing apparatus of claim 5, wherein the second heating element is a lamp heating element, and the first heating element is a resistance heating element. The substrate processing apparatus of claim 10, wherein a plurality of the third heating elements are provided in parallel from the gas upstream side to the gas downstream side of the gas exhaust pipe. Bringing a substrate into a reaction tube provided to surround the outer circumference by a heating device; In the heating apparatus, an inlet formed in a spherical shape from a lower end of the heating apparatus to a heat insulator surrounding the reaction tube, and on the side surface of the reaction tube in a region in which the substrate is processed inside the reaction tube. In the state where the installed gas introduction tube is inserted, gas is introduced into the reaction tube from the gas introduction tube, and the inside of the reaction tube is heated by the first heating element provided between the heat insulator and the reaction tube. And a step of heating a gas in the gas introduction tube with a second heating element provided between the introduction port and the gas introduction tube, introducing a gas from the gas introduction tube into the reaction tube, and treating the substrate; Process of carrying out a board | substrate from the said reaction tube Method for manufacturing a semiconductor device comprising a. Bringing a substrate into a reaction tube provided to surround the outer circumference by a heating device; In the heating apparatus, an inlet formed in a spherical shape from a lower end of the heating apparatus to a heat insulator surrounding the reaction tube, and on the side surface of the reaction tube in a region in which the substrate is processed inside the reaction tube. In the state in which the installed gas introduction tube is inserted, the inside of the reaction tube is heated by the first heating element provided between the heat insulator and the reaction tube, and the gas in the gas introduction tube is transferred to the introduction port and the gas introduction tube. Heated by a second heating element provided between the gas and the gas into the reaction tube from the gas introduction tube, A third provided between the outlet port and the gas exhaust pipe in a state in which a gas exhaust pipe provided on the side of the reaction pipe is inserted in an outlet provided in the heat insulator in a region in which the substrate is processed inside the reaction pipe; The heating element heats the gas in the gas exhaust pipe, Processing the substrate; Process of carrying out a board | substrate from the said reaction tube Method for manufacturing a semiconductor device comprising a. A heating apparatus for use in a substrate processing apparatus having a gas introduction tube for introducing a gas into the reaction tube on a side of the reaction tube in a region in which a substrate is processed inside the reaction tube. An insulator surrounding the reaction tube, an inlet formed in a spherical shape so as to avoid the gas introduction tube from the lower end of the heating apparatus, and a heating element provided between the insulator and the reaction tube. Heating device comprising a. As a heating apparatus used for a substrate processing apparatus, A cylindrical insulator, A first heating element provided along an inner wall of the tubular portion of the insulator, An inlet formed in a spherical shape from a lower end of the heating device in a side surface of the heat insulator in the region where the heating element is present; Second heating element installed in the inlet Heating device comprising a.

Images