CN117012602A - Plasma generating device, semiconductor device cleaning device and in-situ cleaning method - Google Patents
Plasma generating device, semiconductor device cleaning device and in-situ cleaning method Download PDFInfo
- Publication number
- CN117012602A CN117012602A CN202210460331.8A CN202210460331A CN117012602A CN 117012602 A CN117012602 A CN 117012602A CN 202210460331 A CN202210460331 A CN 202210460331A CN 117012602 A CN117012602 A CN 117012602A
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- Prior art keywords
- plasma
- generation chamber
- plasma generation
- fluorine
- chamber
- Prior art date
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Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 39
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 238000011065 in-situ storage Methods 0.000 title claims abstract description 10
- 239000007789 gas Substances 0.000 claims abstract description 59
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 34
- 239000011737 fluorine Substances 0.000 claims abstract description 34
- 230000008569 process Effects 0.000 claims abstract description 20
- 239000012495 reaction gas Substances 0.000 claims abstract description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 238000004891 communication Methods 0.000 claims description 3
- 239000004973 liquid crystal related substance Substances 0.000 claims description 2
- 239000002245 particle Substances 0.000 abstract description 16
- 238000011109 contamination Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 6
- 239000006185 dispersion Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920002430 Fibre-reinforced plastic Polymers 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011151 fibre-reinforced plastic Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0014—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by incorporation in a layer which is removed with the contaminants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32871—Means for trapping or directing unwanted particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Health & Medical Sciences (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The application provides a plasma generating device, a semiconductor device cleaning device and an in-situ cleaning method, which relate to the technical field of semiconductors and comprise the following steps: a plasma generation chamber; a microwave applying device mounted on the plasma generating chamber; a first pipeline communicated with the plasma generation chamber and used for introducing a reaction gas into the plasma generation chamber; and the second pipeline is communicated with the plasma generation chamber and is used for introducing fluorine-containing gas into the plasma generation chamber. In the above technical scheme, fluorine-containing gas is introduced into the plasma generation chamber to react and eliminate Si 3 N 4 After the film or the active gas, the plasma is generated at the momentThe plasma generated in the plasma generating chamber does not contain Si 3 N 4 The particles of the film or active gas can avoid Si in the prior art when the plasma generated at the moment is introduced into the subsequent process chamber to clean the wafer inside 3 N 4 Contamination of the wafer by particles of film or reactive gases.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a plasma generating device, a semiconductor device cleaning device and an in-situ cleaning method.
Background
Along with the continuous improvement of the integrated circuit integration level, the surface cleanliness of the wafer serving as the raw material of the integrated circuit is also continuously improved, so that a plasma cleaning machine is often adopted for cleaning the wafer.
The plasma cleaning mechanism mainly depends on the activation of active particles in the plasma to remove stains on the surface of an object. However, after the wafer is cleaned by the existing plasma cleaning machine, the wafer is still polluted, and the cleaning effect cannot meet the requirement.
Disclosure of Invention
The application aims to provide a plasma generating device, a semiconductor device cleaning device and an in-situ cleaning method, which are used for solving the technical problem that a wafer is easy to be polluted in the prior art.
The application provides a plasma generating device, comprising:
a plasma generation chamber;
a microwave applying device mounted on the plasma generating chamber;
a first line communicating with the plasma generation chamber for introducing a reaction gas into the plasma generation chamber;
and the second pipeline is communicated with the plasma generation chamber and is used for introducing fluorine-containing gas into the plasma generation chamber.
The application also provides a semiconductor device cleaning device, which comprises the plasma generating device and a process chamber, wherein the plasma generating chamber is communicated with the process chamber to provide plasma.
The application also provides an in-situ cleaning method of the plasma generating device, which comprises the following steps of:
introducing the reaction gas into the plasma generation chamber to generate plasma;
and introducing the fluorine-containing gas into the plasma generation chamber.
In the above technical scheme, fluorine-containing gas is introduced into the plasma generation chamber to react and eliminate Si 3 N 4 After the film or the active gas, the plasma generated in the plasma generating chamber will not exist Si 3 N 4 The particles of the film or active gas can avoid Si in the prior art when the plasma generated at the moment is introduced into the subsequent process chamber to clean the wafer inside 3 N 4 Contamination of the wafer by particles of film or reactive gases.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present application, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a block diagram of a plasma generator according to an embodiment of the present application;
FIG. 2 is a second block diagram of a plasma generator according to an embodiment of the present application;
FIG. 3 is a graph of particle dispersion trend provided by one embodiment of the present application;
FIG. 4 is a first schematic distribution diagram corresponding to the highest point of the particle count shown in FIG. 3;
FIG. 5 is a second schematic distribution diagram corresponding to the highest point of the particle count shown in FIG. 3;
fig. 6 is a third dispersion diagram corresponding to the highest point of the particle count shown in fig. 3.
Reference numerals:
1. a plasma generation chamber; 2. a microwave application device; 3. a first pipeline; 4. a second pipeline; 5. a process chamber; 51. A wafer loader; 52. a wafer loading chamber.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is only exemplary and is not intended to limit the scope of the present disclosure. In addition, in the following description, descriptions of well-known structures and techniques are omitted so as not to unnecessarily obscure the concepts of the present disclosure.
Various structural schematic diagrams according to embodiments of the present disclosure are shown in the drawings. The figures are not drawn to scale, wherein certain details are exaggerated for clarity of presentation and may have been omitted. The shapes of the various regions, layers and relative sizes, positional relationships between them shown in the drawings are merely exemplary, may in practice deviate due to manufacturing tolerances or technical limitations, and one skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions as actually required.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present therebetween. In addition, if one layer/element is located "on" another layer/element in one orientation, that layer/element may be located "under" the other layer/element when the orientation is turned.
In order to explore the phenomenon that the wafer is still polluted after being cleaned by the conventional plasma cleaning method, the structure and the cleaning process of the conventional plasma cleaning machine are studied.
It has been found that the inner wall of the plasma generating chamber of the existing plasma cleaning machine is generally made of quartz and can be matched with the inner wall of the plasma generating chamber made of N 2 Or NH 3 The formed active gas reacts to generate Si 3 N 4 And (3) a film layer. Therefore, not only Si 3 N 4 The film layer is also active gas, and is easily released from the plasma generation chamber in the form of particles during the subsequent process of cleaning the wafer by the plasma cleaning machine, so that the wafer is polluted, and besides, siO is generated in the plasma generation chamber 1 2 And (3) a film layer.
The reason why the pollution problem still exists after the wafer is cleaned by the existing plasma cleaning method is that the following technical scheme is provided for solving the technical problem of the pollution.
As shown in fig. 1, the plasma generating apparatus provided in this embodiment includes: a plasma generation chamber 1; a microwave applying device 2, the microwave applying device 2 being assembled on the plasma generating chamber 1; a first line 3, the first line 3 being in communication with the plasma generation chamber 1 for introducing a reaction gas into the plasma generation chamber 1; and a second line 4, the second line 4 being in communication with the plasma generation chamber 1 for introducing a fluorine-containing gas into the plasma generation chamber 1.
Meanwhile, as shown in fig. 2, after the reaction gas is introduced into the plasma generation chamber 1 from the first line 3, the reaction gas can be caused to generate plasma in the plasma generation chamber 1 in a state where microwaves are applied to the plasma generation chamber 1 by the microwave applicator 2. Wherein the reaction gas may be N 2 Can be N 2 And H 2 Can be NH 3 Or may be NH 3 And N 2 In addition, those skilled in the art can select an appropriate reaction gas according to the need, and the present application is not limited thereto.
In the process, i.e., before, simultaneously with or after the introduction of the reaction gas, a fluorine-containing gas, for example, a fluorine-containing gas including NF, is introduced into the plasma generation chamber 1 through the second line 4 3 、CF 4 、SF 6 Or F 2 . At this time, the fluorine-containing gas can be mixed with Si in the plasma generation chamber 1 3 N 4 Film layers or reactive gases (e.g. N 2 Or NH 3 ) Reaction is carried out to lead Si to 3 N 4 The film or reactive gas is eliminated by the reaction.
For example, when fluorine-containing gas is NF 3 And with Si 3 N 4 When the film layer reacts, the reaction formula is as follows: si (Si) 3 N 4 (s)+4NF 3 (g)→3SiF 4 (g)+2N 2 (g) A. The application relates to a method for producing a fibre-reinforced plastic composite At this time, si in the plasma generation chamber 1 can be reduced 3 N 4 The film reaction eliminates and avoids the Si 3 N 4 The film layer contaminates the wafer in the form of particles during the subsequent cleaning process to achieve the purpose of improving the cleaning effect of the wafer.
In addition, when other gases are used as fluorine-containing gases, and with Si 3 N 4 When the film layer or the active gas reacts, si can be correspondingly eliminated 3 N 4 Film or active gas, avoiding Si 3 N 4 The film or reactive gas contaminates the wafer in the form of particles during the subsequent cleaning process.
With continued reference to FIG. 2, when fluorine-containing gas is introduced into the plasma generation chamber 1 to react and eliminate Si 3 N 4 After the film or the active gas, the plasma generated in the plasma generating chamber 1 will not contain Si 3 N 4 Particles of film or reactive gas, when the plasma generated at this time is introduced into the subsequent process chamber 5to clean the wafer inside, can avoid Si in the prior art 3 N 4 Contamination of the wafer by particles of film or reactive gases.
Thus, as shown with continued reference to FIGS. 3-6, si, as the number or duration of cleaning increases 3 N 4 The generation of film layers or active gas dispersion particles will be effectively alleviated. Moreover, when in-situ cleaning is performed in the mode, the phenomenon of particle capture can not occur, so that the abnormal deposition phenomenon of the subsequent contact polysilicon can be effectively eliminated, and the contact resistance defect of the device is prevented.
The application also provides a semiconductor device cleaning device, which comprises a plasma generating device and a process chamber 5, wherein the plasma generating chamber 1 is communicated with the process chamber 5to provide plasma. The process chamber 5 contains at least a wafer loader 51 and a wafer loading chamber 52, and the plasma generation chamber 1 can communicate with the process chamber 5 through an adapted line structure to introduce plasma into the process chamber 5 for wafer cleaning. The semiconductor device cleaning apparatus is adapted to clean a semiconductor device including at least: semiconductor memory, flash memory, and liquid crystal display. Those skilled in the art may also select other structures, types of process chambers 5, or select appropriate equipment for cleaning, as desired, without limitation.
As shown in fig. 1 and 2, the present application further provides an in-situ cleaning method of a plasma generating apparatus, according to which the method comprises the following steps: introducing a reaction gas into the plasma generation chamber 1 to generate plasma; a fluorine-containing gas is introduced into the plasma generation chamber 1.
As described above, in a state where microwaves are applied to the plasma generation chamber 1, the reaction gas can be caused to generate plasma in the plasma generation chamber 1. Wherein the reaction gas may be N 2 Can be N 2 And H 2 Can be NH 3 Or may be NH 3 And N 2 In addition, those skilled in the art can select an appropriate reaction gas according to the need, and the present application is not limited thereto.
In the process, namely, in the reactionBefore, simultaneously with or after the gas is introduced, a fluorine-containing gas, for example, a fluorine-containing gas including NF, is introduced into the plasma generation chamber 1 through the second line 4 3 、CF 4 、SF 6 Or F 2 . At this time, the fluorine-containing gas can be mixed with Si in the plasma generation chamber 1 3 N 4 Film layers or reactive gases (e.g. N 2 Or NH 3 ) Reaction is carried out to lead Si to 3 N 4 The film or reactive gas is eliminated by the reaction.
Wherein, still include the following step: argon is introduced into the plasma generation chamber 1 before or after the introduction of the fluorine-containing gas. At this time, argon gas may be selectively introduced into the plasma generating chamber 1 through the second pipe 4, and after the argon gas is introduced, the plasma in the plasma generating chamber 1 can be ensured to be in a stable state.
In addition, when introducing the fluorine-containing gas into the plasma generation chamber 1, the introducing pressure of the fluorine-containing gas may be controlled to be 3.4Torr to 4Torr, and for example, the introducing pressure may be selected to be 3.4Torr, 3.5Torr, 3.6Torr, 3.7Torr, 3.8Torr, 3.9Torr, 4Torr, or the like. At the same time, the flow rate of the fluorine-containing gas may be controlled to be between 480sccm and 520sccm, and for example, the flow rate may be selected to be 480sccm, 485sccm, 490sccm, 495sccm, 500sccm, 505sccm, 510sccm, 515sccm, 520sccm, or the like. At the same time, the fluorine-containing gas may be introduced for 18s to 22s, and for example, the introduction time may be selected to be 18s, 19s, 20s, 21s, 22s, or the like. At the same time, the fluorine-containing gas may be supplied at a power of 1100W to 1300W, for example, 1100W, 1150W, 1200W, 1250W, 1300W, or the like may be selected.
Preferably, in one embodiment, a reaction gas may be introduced into the plasma generation chamber 1 to generate plasma; in cooperation with this, NF3 gas was introduced into the plasma generation chamber 1, and the introduction pressure of the fluorine-containing gas was controlled to be 3.7Torr, the introduction power of the fluorine-containing gas was controlled to be 1200W, the introduction flow rate of the fluorine-containing gas was controlled to be 500sccm, and the introduction time of the fluorine-containing gas was controlled to be 20s.
In the above description, technical details of patterning, etching, and the like of each layer are not described in detail. Those skilled in the art will appreciate that layers, regions, etc. of the desired shape may be formed by a variety of techniques. In addition, to form the same structure, those skilled in the art can also devise methods that are not exactly the same as those described above. In addition, although the embodiments are described above separately, this does not mean that the measures in the embodiments cannot be used advantageously in combination.
The embodiments of the present disclosure are described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. The scope of the disclosure is defined by the appended claims and equivalents thereof. Various alternatives and modifications can be made by those skilled in the art without departing from the scope of the disclosure, and such alternatives and modifications are intended to fall within the scope of the disclosure.
Claims (10)
1. A plasma generating apparatus, comprising:
a plasma generation chamber;
a microwave applying device mounted on the plasma generating chamber;
a first line communicating with the plasma generation chamber for introducing a reaction gas into the plasma generation chamber;
and the second pipeline is communicated with the plasma generation chamber and is used for introducing fluorine-containing gas into the plasma generation chamber.
2. The plasma generator according to claim 1, wherein the fluorine-containing gas comprises NF 3 、CF 4 、SF 6 Or F 2 。
3. A semiconductor device cleaning apparatus comprising the plasma generating apparatus of claim 1 or 2, further comprising a process chamber, the plasma generating chamber in communication with the process chamber to provide a plasma.
4. A semiconductor device cleaning apparatus according to claim 3, wherein the semiconductor device comprises at least: semiconductor memory, flash memory, and liquid crystal display.
5. A method of cleaning a plasma-generating device in situ, characterized in that the plasma-generating device according to claim 1 or 2 comprises the steps of:
introducing the reaction gas into the plasma generation chamber to generate plasma;
and introducing the fluorine-containing gas into the plasma generation chamber.
6. The clean-in-place method of claim 5, further comprising the steps of:
argon is introduced into the plasma generation chamber before or after the fluorine-containing gas is introduced.
7. The in-situ cleaning method of claim 5 or 6, wherein the fluorine-containing gas is introduced at a pressure between 3.4Torr and 4 Torr.
8. The cleaning-in-place method according to claim 5 or 6, wherein the fluorine-containing gas is introduced at a power of between 1100W and 1300W and/or at a flow rate of between 480sccm and 520 sccm.
9. The cleaning in place method of claim 5 or 6, wherein the fluorine-containing gas is introduced for a time period of between 18s and 22 s.
10. The cleaning-in-place method according to claim 5 or 6, wherein a reaction gas is introduced into the plasma generation chamber to generate plasma;
introducing NF3 gas into the plasma generation chamber; wherein the fluorine-containing gas has a pressure of 3.7Torr, a power of 1200W, a flow rate of 500sccm, and a time of 20s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210460331.8A CN117012602A (en) | 2022-04-28 | 2022-04-28 | Plasma generating device, semiconductor device cleaning device and in-situ cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210460331.8A CN117012602A (en) | 2022-04-28 | 2022-04-28 | Plasma generating device, semiconductor device cleaning device and in-situ cleaning method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117012602A true CN117012602A (en) | 2023-11-07 |
Family
ID=88573164
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210460331.8A Pending CN117012602A (en) | 2022-04-28 | 2022-04-28 | Plasma generating device, semiconductor device cleaning device and in-situ cleaning method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117012602A (en) |
-
2022
- 2022-04-28 CN CN202210460331.8A patent/CN117012602A/en active Pending
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