CN208368468U - Chemical gaseous phase etching apparatus - Google Patents
Chemical gaseous phase etching apparatus Download PDFInfo
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- CN208368468U CN208368468U CN201820433992.0U CN201820433992U CN208368468U CN 208368468 U CN208368468 U CN 208368468U CN 201820433992 U CN201820433992 U CN 201820433992U CN 208368468 U CN208368468 U CN 208368468U
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- phase etching
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- etching cavity
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Abstract
The utility model provides a kind of chemical gaseous phase etching apparatus, comprising: the first chemical gaseous phase etching cavity and the second chemical gaseous phase etching cavity, the first chemical gaseous phase etching cavity include: the first chemical gaseous phase etching cavity main body；First chuck is located in the first chemical gaseous phase etching cavity main body；First air inlet pipeline is connected with the first chemical gaseous phase etching cavity body interior；Second air inlet pipeline is connected with the first chemical gaseous phase etching cavity body interior；First exhaust pipeline is connected with the first chemical gaseous phase etching cavity body interior；Second chemical gaseous phase etching cavity includes: the second chemical gaseous phase etching cavity main body；Second chuck is located in the second chemical gaseous phase etching cavity main body；Heating device is located in the second chuck；Second exhaust pipeline is connected with the second chemical gaseous phase etching cavity body interior.When the utility model removes the heat oxide film and deposited oxide film in semiconductor substrate, cavity blemish will not be formed in the intersection of the two.
Description
Technical field
The utility model belongs to semiconductor process technique field, more particularly to a kind of chemical gaseous phase etching apparatus.
Background technique
Silicon oxide layer is among the preparation process that semiconductor field is widely used in semiconductor devices, and in actual process
In, according to device architecture and the needs of technique, it is sometimes necessary to remove the silicon oxide layer for being located at some regions in semiconductor substrate
It removes.Existing silicon oxide layer minimizing technology generally uses wet process removal technique；However, in semiconductor processing, silicon oxide layer
Formation process include many kinds.And for the silicon oxide layer of different process formation since it is with different consistency and spy
Property, when being removed using wet process removal technique to silicon oxide layer, can have to the silicon oxide layer that different process is formed different
Removal rate, this will form cavity blemish in the intersection of two kinds of different process, and will form and extend to below barrier layer
It pulls back defect.For example, heat oxide film 11 is being formed with 10 surface of semiconductor substrate as shown in Figure 1 and is being covered in the part heat
The barrier layer 14 on 11 surface of oxidation film, when being removed to the exposed heat oxide film 11, since the semiconductor serves as a contrast
Other than being formed with the heat oxide film 11 in addition to being located at 10 surface of semiconductor substrate in bottom 10, it is also formed with deposited oxide
Film 12 is used as fleet plough groove isolation structure (STI), and different works are respectively adopted from the heat oxide film 11 in the deposited oxide film 12
Skill is formed, and when removing the exposed heat oxide film 11 using wet process, can also be gone simultaneously to the deposited oxide film 12
It removes, and since wet etching solution has different removal rates to the heat oxide film 11 and the deposited oxide film 12, it is special
It is not when removal rate of the wet etching solution to the deposited oxide film 12 is greater than the removal rate to the heat oxide film 11
When, as shown in Fig. 2, after the exposed heat oxide film 11 is removed, it can be in the deposited oxide film 12 and original hot oxygen
The intersection for changing film 11 forms cavity blemish 13, and is formed and extended to one below the barrier layer 14 below the barrier layer 14
The defect 15 of pulling back of depthkeeping degree.Described hole defect 13 and the presence for pulling back defect 15 may result in device and generate electric leakage
The problems such as stream, to influence the performance of device.
Utility model content
In view of the foregoing deficiencies of prior art, the purpose of this utility model is to provide a kind of chemical gaseous phase etchings to set
It is standby, for solve it is in the prior art using wet process removal technique removal silicon oxide layer when it is existing can be in two kinds of different process
Intersection forms cavity blemish, and will form the defect of pulling back extended to below barrier layer, generates leakage current so as to cause device
Deng, and then the problem of the performance of influence device.
In order to achieve the above objects and other related objects, the utility model provides a kind of while removing heat oxide film and removal
The method of deposited oxide film, method that is described while removing heat oxide film and remove deposited oxide film include the following steps:
1) semi-conductive substrate is provided, the semiconductor substrate has isolated groove, forms heat in the semiconductor substrate
Oxidation film forms deposited oxide film in the isolated groove；
2) heat oxide film on the semiconductor substrate and described heavy is removed simultaneously with chemical gaseous phase etching mode
Product oxidation film, wherein step 2) includes: offer chemical gas phase reaction gas, the chemical gaseous phase in the semiconductor substrate
Reaction gas generates chemical reaction to the heat oxide film and the deposited oxide film, to be formed on the semiconductor substrate
The second podzolic horizon on the first podzolic horizon and the isolated groove in the semiconductor substrate；And by the semiconductor
Substrate carries out ashing heating so that first podzolic horizon and second podzolic horizon by solid compounds be decomposed into gas and
It is removed, and retains the deposited oxide film in the isolation trench.
Preferably, the deposited oxide film has the lug boss for protruding from the heat oxide film.
Preferably, first podzolic horizon includes the entirety of the heat oxide film, and second podzolic horizon includes described heavy
A part of product oxidation film.
Preferably, the chemical gas phase reaction gas provided in step 2) includes hydrogen fluoride gas and ammonia.
Preferably, in step 2), the ratio between gas flow of the ammonia and the hydrogen fluoride gas is between 0.9:1~1.1:
1。
Preferably, in step 2), the gas flow of the ammonia between 20 standard milliliters/minute~100 standard milliliters/point
Clock, the gas flow of the hydrogen fluoride gas is between 20 standard milliliters/minute~100 standard milliliters/minute；To the semiconductor
Substrate surface provides the time of the chemical gas phase reaction gas between 5 seconds~60 seconds simultaneously；The temperature of the semiconductor substrate
Between 30 DEG C~35 DEG C.
Preferably, in step 2), the purity of the ammonia is greater than 99.999%, and the purity of the hydrogen fluoride gas is not less than
99.999%.
Preferably, in step 2), the chemical reaction is implemented in the first chemical gaseous phase etching cavity.
Preferably, be passed through in the chemical reaction into the first chemical gaseous phase etching cavity the hydrogen fluoride gas and
While the ammonia, inert gas also is passed through into the first chemical gaseous phase etching cavity.
Preferably, in step 2), the purity of the inert gas is not less than 99%.
Preferably, further include before the chemical gas phase reaction gas is passed through into the first chemical gaseous phase etching cavity
Following steps:
It is passed through nitrogen and inert gas into the first chemical gaseous phase etching cavity, first chemical gaseous phase is carved
The erosion indoor pressure of chamber is stable at first pressure；
Under the conditions of the first pressure, the nitrogen and lazy is continually fed into the first chemical gaseous phase etching cavity
While property gas, ammonia is passed through into the first chemical gaseous phase etching cavity；
Stop being passed through nitrogen into the first chemical gaseous phase etching cavity, it will be in the first chemical gaseous phase etching cavity
Pressure be adjusted to second pressure；
Further include following steps between the chemical reaction and ashing heating:
Stop being passed through the hydrogen fluoride gas into the first chemical gaseous phase etching cavity, continue to first chemistry
Ammonia and inert gas are passed through in gas phase etching cavity.
Preferably, first podzolic horizon and second podzolic horizon include ammonium fluosilicate.
Preferably, during the semiconductor substrate being carried out ashing heating, what the semiconductor substrate was heated to
Temperature is between 140 DEG C~200 DEG C.
Preferably, in step 2), while the semiconductor substrate is carried out ashing heating, to the semiconductor substrate table
Face is provided nitrogen and is purged with the surface to the semiconductor substrate.
Preferably, the semiconductor substrate ashing heating is carried out to include the following steps:
By the semiconductor substrate that surface is formed with first podzolic horizon and second podzolic horizon carry out ashing plus
While hot, first time purging is carried out to the semiconductor substrate surface with first gas flow using the nitrogen；
The flow of the nitrogen is adjusted to second gas flow, second of purging is carried out to the semiconductor substrate surface,
Wherein, the second gas flow is less than the first gas flow.
Preferably, the first gas flow is between 1500 standard milliliters/minute~2500 standard milliliters/minute, and first
The purging pressure of secondary purging is between 1500 millitorrs~2500 millitorrs；The second gas flow between 200 standard milliliters/minute~
400 standard milliliters/minute, the purging pressure of second of purging is between 200 millitorrs~400 millitorrs.
Preferably, using the nitrogen with the first gas flow to the semiconductor substrate surface purged when
Between between 90 seconds~110 seconds, the semiconductor substrate surface is purged with the second gas flow using the nitrogen
Time between 10 seconds~30 seconds.
Preferably, in step 2), the semiconductor substrate is subjected to ashing heating and is implemented in the second chemical gaseous phase etch chamber
Interior, ashing heating while be passed through into the second chemical gaseous phase etching cavity nitrogen to the semiconductor substrate surface into
Row purging.
It preferably, further include to the second chemical gaseous phase etch chamber before the semiconductor substrate being carried out ashing heating
Interior is passed through the step of nitrogen, and the indoor pressure of the second chemical gaseous phase etch chamber is stable at preset pressure.
The utility model also provides a kind of chemical gaseous phase etching apparatus, and the chemical gaseous phase etching apparatus is partly led for removing
Heat oxide film and deposited oxide film in body substrate, the chemical gaseous phase etching apparatus include:
First chemical gaseous phase etching cavity, the first chemical gaseous phase etching cavity include:
First chemical gaseous phase etching cavity main body；
First chuck is located in the first chemical gaseous phase etching cavity main body, for adsorbing the semiconductor substrate；
First air inlet pipeline is connected with the first chemical gaseous phase etching cavity body interior；
Second air inlet pipeline is connected with the first chemical gaseous phase etching cavity body interior, first air inlet pipe
Road and second air inlet pipeline are used to be passed through chemical gas phase reaction gas to the first chemical gaseous phase etching cavity body interior
Body；The chemical gas phase reaction gas generates chemical reaction to the heat oxide film and the deposited oxide film, described half
The second podzolic horizon on the first podzolic horizon and the isolated groove on the semiconductor substrate is formed on conductor substrate；
First exhaust pipeline is connected with the first chemical gaseous phase etching cavity body interior, is used for described first
The residual gas of chemical gaseous phase etching cavity body interior is discharged；
Second chemical gaseous phase etching cavity, the second chemical gaseous phase etching cavity include:
Second chemical gaseous phase etching cavity main body；
Second chuck is located in the second chemical gaseous phase etching cavity main body, is formed with described for absorption surface
The semiconductor substrate of one podzolic horizon and second podzolic horizon；
Heating device is located in second chuck, for being formed with first podzolic horizon and described second to surface
The semiconductor substrate of podzolic horizon carries out ashing heating, so that first podzolic horizon and second podzolic horizon are by solid-state
Compound is decomposed into gas and is removed；And
Second exhaust pipeline is connected with the second chemical gaseous phase etching cavity body interior.
Preferably, the chemical reaction gas includes hydrogen fluoride gas and ammonia, and first air inlet pipeline is used for institute
It states the first chemical gaseous phase etching cavity body interior and is passed through hydrogen fluoride gas, second air inlet pipeline is used to change to described first
It learns gas phase etching cavity body interior and is passed through ammonia；First podzolic horizon and second podzolic horizon include ammonium fluosilicate.
Preferably, the chemical gaseous phase etching apparatus further includes third air inlet pipeline (214), the third air inlet pipeline with
The second chemical gaseous phase etching cavity body interior is connected, for leading into the second chemical gaseous phase etching cavity main body
Enter purge gas, first podzolic horizon of evaporation and second podzolic horizon blown off from the semiconductor substrate surface,
And the second chemical gaseous phase etching cavity main body is discharged via the second exhaust pipeline.
Preferably, the third air inlet pipeline is via the second chemical gaseous phase etching cavity body top and described second
Chemical gaseous phase etching cavity body interior is connected.
Preferably, first air inlet pipeline is via the first chemical gaseous phase etching cavity body top and described first
Chemical gaseous phase etching cavity body interior is connected, and second air inlet pipeline is via the first chemical gaseous phase etching cavity master
It is connected at the top of body with the first chemical gaseous phase etching cavity body interior.
Preferably, the chemical gaseous phase etching apparatus further includes cooling device, and the cooling device is located at first card
In disk, for being cooled down to the semiconductor substrate being located on first chuck.
Preferably, the chemical gaseous phase etching apparatus further includes the 4th air inlet pipeline and the 5th air inlet pipeline；Wherein, described
4th air inlet pipeline is connected with the first chemical gaseous phase etching cavity body interior, for carving to first chemical gaseous phase
Nitrogen is passed through in erosion chamber body；5th air inlet pipeline is connected with the first chemical gaseous phase etching cavity body interior
It is logical, for being passed through inert gas into the first chemical gaseous phase etching cavity main body.
Preferably, the chemical gaseous phase etching apparatus further includes Mixed Zone, and the Mixed Zone is located at described first and changes
Learn gas phase etching cavity body top, and with the first chemical gaseous phase etching cavity body interior, first air inlet pipeline
And second air inlet pipeline is connected, the chemical gas for providing first air inlet pipeline and second air inlet pipeline
Phase reaction gas is provided in the first chemical gaseous phase etching cavity main body after being mixed.
Preferably, the chemical gaseous phase etching apparatus further include:
Surge chamber is connected with the first chemical gaseous phase etching cavity and the second chemical gaseous phase etching cavity；
Mechanical arm is located in the surge chamber, for transmitting the semiconductor substrate.
As described above, the chemical gaseous phase etching apparatus of the utility model, has the advantages that the change of the utility model
It is anti-that gas phase etching apparatus can be passed through chemical gaseous phase to the semiconductor substrate surface for being formed with heat oxide film and deposited oxide film
Gas is answered, chemical reaction gas can generate the first podzolic horizon and the second ashing with the heat oxide film and deposited oxide film reaction
Layer then removes first podzolic horizon and second podzolic horizon using ashing heating again；The utility model is to heat oxide film
And it is generally in identical removal rate that deposited oxide film, which has, and it is in each to same to the removal of heat oxide film and deposited oxide layer
Property, cavity blemish will not be formed in the intersection of heat oxide film and deposited oxide film, also can only generate ruler in the lower section on barrier layer
The small defect of pulling back of very little very little will not even generate defect of pulling back in the lower section on barrier layer, so as to effectively avoid device
The generation of leakage current, and then ensure the performance of device.
Detailed description of the invention
Fig. 1 is shown as being formed with deposited oxide film inside semiconductor substrate in the prior art, surface is formed with heat oxide film
Cross section structure schematic diagram.
Fig. 2 is shown with existing wet process removal technique for the structure obtained after heat oxide film removal exposed in Fig. 1
Cross section structure schematic diagram.
Removal heat oxide film and removal deposited oxide film while Fig. 3 is shown as providing in the utility model embodiment one
The flow chart of method.
Removal heat oxide film and removal deposition oxygen while fig. 4 to fig. 6 is shown as providing in the utility model embodiment one
Change the structural schematic diagram that step 1) is presented in the method for film.
Removal heat oxide film and removal deposition oxygen while Fig. 7 to Fig. 9 is shown as providing in the utility model embodiment one
Change the first podzolic horizon and the isolated groove formed on a semiconductor substrate in the step 2) of the method for film on a semiconductor substrate
On the second podzolic horizon after structural schematic diagram.
Removal heat oxide film and removal deposition while Figure 10 to Figure 12 is shown as providing in the utility model embodiment one
Semiconductor substrate is subjected to ashing heating so that the first podzolic horizon and the second podzolic horizon are by solid in the step 2) of the method for oxidation film
State compound be decomposed into gas and be removed after structural schematic diagram.
Figure 13 is shown as the first chemical gaseous phase in the chemical gaseous phase etching apparatus provided in the utility model embodiment two
The structural schematic diagram of etching cavity.
Figure 14 is shown as the second chemical gaseous phase in the chemical gaseous phase etching apparatus provided in the utility model embodiment two
The structural schematic diagram of etching cavity.
Figure 15 is shown as the structural schematic diagram of the chemical gaseous phase etching apparatus provided in the utility model embodiment three.
Reference numerals explanation
10 semiconductor substrates
11 heat oxide films
12 deposited oxide films
13 cavity blemish
14 barrier layers
15 pull back defect
2 chemical gaseous phase etching apparatus
20 first chemical gaseous phase etching cavities
200 first chemical gaseous phase etching cavity main bodys
201 first chucks
202 first air inlet pipelines
203 second air inlet pipelines
204 first exhaust pipelines
205 cooling devices
206 the 4th air inlet pipelines
207 the 5th air inlet pipelines
208 Mixed Zones
21 second chemical gaseous phase etching cavities
210 second chemical gaseous phase etching cavity main bodys
211 second chucks
212 heating devices
213 second exhaust pipelines
214 third air inlet pipelines
22 surge chambers
23 mechanical arms
30 semiconductor substrates
31 heat oxide films
311 first podzolic horizons
32 deposited oxide films
321 lug bosses
322 second podzolic horizons
33 barrier layers
34 small defects of pulling back
Specific embodiment
Illustrate the embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this theory
Content disclosed by bright book understands other advantages and effect of the utility model easily.The utility model can also be by addition
Different specific embodiments are embodied or practiced, and the various details in this specification can also be based on different viewpoints and answer
With carrying out various modifications or alterations under the spirit without departing from the utility model.
Please refer to Fig. 3~Figure 15.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of utility model, though it is only shown with related component in the utility model rather than when according to actual implementation in diagram
Component count, shape and size are drawn, when actual implementation form, quantity and the ratio of each component can arbitrarily change for one kind
Become, and its assembly layout form may also be increasingly complex.
Embodiment one
Referring to Fig. 3, the utility model also provides method that is a kind of while removing heat oxide film and remove deposited oxide film,
The method includes the following steps:
1) semi-conductive substrate 30 is provided, the semiconductor substrate 30 has isolated groove, in the semiconductor substrate 30
Heat oxide film 31 is formed, forms deposited oxide film 32 in the isolated groove；
2) heat oxide film on the semiconductor substrate and described heavy is removed simultaneously with chemical gaseous phase etching mode
Product oxidation film, wherein step 2) includes: offer chemical gas phase reaction gas, the chemical gaseous phase in the semiconductor substrate
Reaction gas generates chemical reaction to the heat oxide film and the deposited oxide film, to be formed on the semiconductor substrate
The second podzolic horizon on the first podzolic horizon and the isolated groove in the semiconductor substrate；And by the semiconductor
Substrate carries out ashing heating so that first podzolic horizon and second podzolic horizon by solid compounds be decomposed into gas and
It is removed, and retains the deposited oxide film in the isolation trench.
In step 1), S1 step and the fig. 4 to fig. 6 in Fig. 3 are please referred to, semi-conductive substrate 30 is provided, it is described partly to lead
Body substrate 30 has isolated groove, forms heat oxide film 31 in the semiconductor substrate 30, forms deposition in the isolated groove
Oxidation film 32.
As an example, deposited oxide film 32 can for using high density plasma CVD technique (HDP) or
Spin-on oxide medium layer process (SOD) formation.
In one example, as shown in figure 4, the deposited oxide layer 32 has the protrusion knot for protruding from the heat oxide film 31
Structure 321, the upper surface of the lug boss 321 are higher than the upper surface of the heat oxide film 31；Certainly, due to different processing procedure knots
Structure, in another example, as shown in figure 5, the upper surface of the deposited oxide film 32 can also be upper with the heat oxide film 31
Surface flush；In another example, as shown in fig. 6, the upper surface of the deposited oxide film 32 may also be below the hot oxygen
Change the upper surface of film 31.
In step 2), the S2 step and Fig. 7 to Figure 12 in Fig. 3 are please referred to, is removed simultaneously with chemical gaseous phase etching mode
The heat oxide film 31 and the deposited oxide film 32 in the semiconductor substrate 30, wherein step 2) includes: to described
Chemical gas phase reaction gas is provided in semiconductor substrate 30, the chemical gas phase reaction gas is to the heat oxide film 31 and described
Deposited oxide film 32 generates chemical reaction, to be formed in first in the semiconductor substrate 30 in the semiconductor substrate 30
The second podzolic horizon 322 on podzolic horizon 311 and the isolated groove；And the semiconductor substrate 30 is subjected to ashing and is added
Heat, so that first podzolic horizon 311 and second podzolic horizon 322 are decomposed into gas by solid compounds and are removed,
And the deposited oxide film 32 of reservation in the isolation trench.
As an example, first podzolic horizon 311 includes the entirety of the heat oxide film 31, i.e. the thermal oxide of exposure
31 total overall reaction of film is at first podzolic horizon 311；Second podzolic horizon 322 includes one of the deposited oxide film 32
Point, i.e., some reaction of the described deposited oxide film 32 is at second podzolic horizon 322.
As an example, as shown in fig. 7, protruding from the heat oxide film when the deposited oxide film 32 has as shown in Figure 4
When 31 lug boss 321, the lug boss 321 of the deposited oxide film 32 is reacted into second podzolic horizon 322；When
The upper surface of the deposited oxide film 32 as shown in Figure 5 with the upper surface flush or the deposited oxide of the heat oxide film 31
When the upper surface of film 32 is lower than the upper surface of the heat oxide film 31 as shown in Figure 6, a part of the deposited oxide film 32 is anti-
It should be at second podzolic horizon 322 (as can be seen from figures 8 and 9).
As an example, the thickness of first podzolic horizon 311 and second podzolic horizon 322 is generally in identical, the i.e. step
The thickness of the deposited oxide film 32 of the heat oxide film 31 and removal of middle consumption removal is generally in identical.
As an example, the chemical gas phase reaction gas provided in the semiconductor substrate 30 includes hydrogen fluoride gas
And ammonia, first podzolic horizon 311 and second podzolic horizon 322 include ammonium fluosilicate；The hydrogen fluoride and the ammonia
Gas and the heat oxide film and the oxidation pasc reaction of the deposited oxide film surface are in silicon oxide layer surface formation fluosilicic acid
The reaction formula of ammonium is as follows:
SiO2+4HF+4NH3→SiF4+2H2O+4NH3
SiF4+2HF+2NH3→(NH4)2SiF6
As an example, the ratio between the ammonia and the gas flow of the hydrogen fluoride gas can be set according to actual needs
It is fixed, it is preferable that the ratio between gas flow of the ammonia and the hydrogen fluoride gas between 0.9:1~1.1:1, it is further preferable that
In the present embodiment, the ratio between gas flow of the ammonia and the hydrogen fluoride gas is 1:1.
Specifically, the gas flow of the ammonia is between 20 standard milliliters/minute~100 standard milliliters/minute, the fluorine
Change the gas flow of hydrogen between 20 standard milliliters/minute~100 standard milliliters/minute；To the semiconductor substrate surface
The time of the hydrogen fluoride gas and the ammonia is provided between 5 seconds~60 seconds simultaneously, it is preferable that the semiconductor substrate table
Face provides the time of the hydrogen fluoride gas and the ammonia between 5 seconds~20 seconds simultaneously；The temperature of the semiconductor substrate is situated between
In 30 DEG C~35 DEG C.
As an example, the semiconductor substrate 30 can be placed in one first chemical gaseous phase etching cavity, to described
The hydrogen fluoride gas and the ammonia are passed through in one chemical gaseous phase etching cavity simultaneously.
As an example, the purity of the ammonia is greater than 99.999%, the purity of the hydrogen fluoride gas is not less than
99.999%.
As an example, being passed through the same of the hydrogen fluoride gas and the ammonia into the first chemical gaseous phase etching cavity
When, also inert gas is passed through into the first chemical gaseous phase etching cavity.Preferably, the purity of the inert gas is not less than
99%, the inert gas may include but be not limited only to Ar.
As an example, may be used also before being passed through the chemical gas phase reaction gas into the first chemical gaseous phase etching cavity
To include the following steps:
It is passed through nitrogen and inert gas into the first chemical gaseous phase etching cavity, first chemical gaseous phase is carved
The erosion indoor pressure of chamber is stable at first pressure, the first pressure can be but be not limited only to 1500mT (millitorr)~
2500mT；
Under the conditions of the first pressure, the nitrogen and lazy is continually fed into the first chemical gaseous phase etching cavity
While property gas, ammonia is passed through into the first chemical gaseous phase etching cavity；It is carved at the same time to first chemical gaseous phase
Ammonia, Ke Yi first are passed through into the first chemical gaseous phase etching cavity before being passed through ammonia and hydrogen fluoride gas in erosion chamber
Before being passed through hydrogen fluoride gas into the first chemical gaseous phase etching cavity the first chemical gaseous phase etching cavity is filled
Full ammonia, to prevent the internal-response of the hydrogen fluoride gas and the first chemical gaseous phase etching cavity to damage described first
Chemical gaseous phase etching cavity；
Stop being passed through nitrogen into the first chemical gaseous phase etching cavity, it will be in the first chemical gaseous phase etching cavity
Pressure be adjusted to second pressure, the second pressure can be but be not limited only to 20mT (millitorr)~100mT；
As an example, the chemical reaction can also include the following steps: with ashing heating
Stop being passed through the hydrogen fluoride gas into the first chemical gaseous phase etching cavity, continue to first chemistry
Ammonia and inert gas are passed through in gas phase etching cavity, it can be by residual in the first chemical gaseous phase etching cavity in the step
The hydrogen fluoride gas exclude completely.
It should be noted that by the first chemical gaseous phase etch chamber after above-mentioned steps and by the semiconductor substrate 30
Before indoor taking-up, any gas can also be passed through into the first chemical gaseous phase etching cavity including stopping, and will be described
The step of first indoor residual gas of chemical gaseous phase etch chamber is completely exhausted out.
As an example, the ammonium fluosilicate is by solid compounds point carrying out ashing heating to the semiconductor substrate 30
Solution is that the reaction equation of gas is as follows:
(NH4)2SiF6→SiF4+2HF+2NH3
As an example, surface to be formed with to the semiconductor substrate 30 of first podzolic horizon and second podzolic horizon
While carrying out ashing heating, nitrogen also is provided with the surface to the semiconductor substrate 30 to 30 surface of semiconductor substrate
It is purged.Specifically, surface to be formed with to the semiconductor substrate 30 of first podzolic horizon and second podzolic horizon
It is placed in the second chemical gaseous phase etching cavity and carries out ashing heating, and be passed through simultaneously into the second chemical gaseous phase etching cavity
Nitrogen purges 30 surface of semiconductor substrate.
As an example, surface to be formed with to the semiconductor substrate 30 of first podzolic horizon and second podzolic horizon
Ashing heating is carried out, so that first podzolic horizon and second podzolic horizon on 30 surface of the semiconductor substrate are by solid-state
Compound is decomposed into gas and is removed and includes the following steps:
By surface be formed with the semiconductor substrate 30 of first podzolic horizon 311 and second podzolic horizon 322 into
While row ashing heating, 30 surface of semiconductor substrate blow for the first time with first gas flow using the nitrogen
It sweeps；
The flow of the nitrogen is adjusted to second gas flow to blow 30 surface of semiconductor substrate for the second time
It sweeps, wherein the second gas flow is less than the first gas flow.
As an example, the first gas flow is between 1500 standard milliliters/minute~2500 standard milliliters/minute, institute
The purging pressure of purging for the first time is stated between 1500 millitorrs~2500 millitorrs；The second gas flow between 200 standard milliliters/
Minute~400 standard milliliters/minute, the purging pressure of second of purging is between 200 millitorrs~400 millitorrs.
As an example, being purged with the first gas flow to 30 surface of semiconductor substrate using the nitrogen
Time between 90 seconds~110 seconds, it is preferable that using the nitrogen with the first gas flow to the semiconductor substrate 30
The time that surface is purged was between 100 seconds；Using the nitrogen with the second gas flow to the semiconductor substrate 30
The time that surface is purged was between 10 seconds~30 seconds.The semiconductor is served as a contrast using different gas flows in the different stages
The surface at bottom 30 is purged, and the gas flow of follow-up phase and purging pressure respectively less than in the gas flow of last stage and are blown
Sweep pressure, it can be ensured that make reaction product be gone out under lower pressure more thorough.
As an example, the semiconductor substrate 30 is heated during the semiconductor substrate is carried out ashing heating
Temperature extremely is between 140 DEG C~200 DEG C.
As an example, can also include to the described second chemical gas before the semiconductor substrate 30 is carried out ashing heating
The indoor pressure of second chemical gaseous phase etch chamber is stable at default pressure by the step of being passed through nitrogen in phase etching cavity
Power.As an example, the preset pressure can be between 1500 millitorrs~2500 millitorrs.The semiconductor substrate 30 is ashed
The time that nitrogen is passed through in second chemical gaseous phase etching cavity described in the forward direction of heating can be set according to actual needs, excellent
Selection of land carries out the semiconductor substrate 30 to be passed through nitrogen in second chemical gaseous phase etching cavity described in the forward direction of ashing heating
Time can be between 5 seconds~15 seconds, it is further preferable that the semiconductor substrate 30 is carried out ashing heating in the present embodiment
The time that nitrogen is passed through in second chemical gaseous phase etching cavity 210 described in forward direction is 10 seconds.
It should be noted that being in due to having generally in the above method to the heat oxide film 31 and the deposited oxide film 32
Identical removal rate, when the upper surface for executing step 2) foregoing description lug boss 321 is as shown in Figure 4 higher than the hot oxygen
When changing the upper surface of film 31, the structure obtained after step 2) is as shown in Figure 10, i.e., when the described heat oxide film 31 is completely removed,
The lug boss 321 be only removed with the comparable a part of 31 thickness of oxidation film, still there is the part lug boss 321 to deposit
, that is, the upper surface of the deposited oxide film 32 retained is higher than the upper surface of the semiconductor substrate 30；When execution step
2) upper surface of foregoing description deposited oxide film 32 is the upper surface flush with the heat oxide film 31 as shown in Figure 5, step
2) obtained structure is as shown in figure 11 after, the upper surface of the deposited oxide film 32 of reservation still with the semiconductor substrate 30
Upper surface flush；When the upper surface for executing step 2) foregoing description deposited oxide film 32 is as shown in Figure 6 lower than described half
When the upper surface of conductor substrate 30, the structure obtained after step 2) is as shown in figure 12, the deposited oxide film 32 of reservation it is upper
Surface is still below the upper surface of the semiconductor substrate 30.
The utility model can be to the semiconductor substrate 30 for being formed with the heat oxide film 31 and the deposited oxide film 32
Surface is passed through chemical gas phase reaction gas, and chemical reaction gas can react generation with the heat oxide film 31 and deposited oxide film 32
First podzolic horizon 311 and the second podzolic horizon 322 then remove first podzolic horizon 311 and described the using ashing heating again
Two podzolic horizons 322；The utility model has generally in identical removal speed the heat oxide film 31 and the deposited oxide film 32
Rate, and it is in isotropism to the removal of the heat oxide film 31 and the deposited oxide layer 32, it will not be in the heat oxide film
31 and the deposited oxide film 32 intersection formed cavity blemish, the barrier layer 33 lower section also only can generate size very
It is small it is small pull back defect 34 (as shown in Figure 10 to Figure 12), will not even the lower section on the barrier layer 33 generate pull back it is scarce
It falls into, so as to effectively avoid the generation of device creepage, and then ensures the performance of device.
Embodiment two
Figure 13 and Figure 14 is please referred to, the present embodiment provides a kind of chemical gaseous phase etching apparatus is provided, the chemical gaseous phase is carved
Erosion equipment is for executing the method as described in embodiment one, i.e., for removing heat oxide film and deposition oxygen in semiconductor substrate
Change film, the chemical gaseous phase etching apparatus includes: the first chemical gaseous phase etching cavity 20, the first chemical gaseous phase etching cavity
20 include: the first chemical gaseous phase etching cavity main body 200；First chuck 201, first chuck 201 are located at described first and change
It learns in gas phase etching cavity 200, for adsorbing the semiconductor substrate 30；First air inlet pipeline 202, first air inlet pipeline
202 be connected inside the first chemical gaseous phase etching cavity main body 200；Second air inlet pipeline 203, second air inlet pipe
Be connected inside road 203 and the first chemical gaseous phase etching cavity 200, first air inlet pipeline 202 with described second into
Air pipe 203 is used to be passed through chemical gas phase reaction gas to the inside of the first chemical gaseous phase etching cavity main body 200；Describedization
It learns gas phase reaction gas and chemical reaction is generated to the heat oxide film and the deposited oxide film, on the semiconductor substrate
Form the second podzolic horizon on the first podzolic horizon and the isolated groove on the semiconductor substrate；First exhaust pipeline
204, it is connected inside the first exhaust pipeline 204 and the first chemical gaseous phase etching cavity 200, for by described first
Residual gas discharge inside chemical gaseous phase etching cavity 200；Second chemical gaseous phase etching cavity 21, second chemical gaseous phase
Etching cavity 21 includes: the second chemical gaseous phase etching cavity main body 210；Second chuck 211, second chuck 211 are located at institute
It states in the second chemical gaseous phase etching cavity 210, is formed with first podzolic horizon and second podzolic horizon for absorption surface
The semiconductor substrate 30；Heating device 212, the heating device 212 are located in second chuck 211, for table
Face is formed with first podzolic horizon and the semiconductor substrate 30 of second podzolic horizon carries out ashing heating, so that institute
It states the first podzolic horizon and second podzolic horizon is decomposed into gas by solid compounds and is removed；And second exhaust pipeline 213,
It is connected inside the second exhaust pipeline 213 and the second chemical gaseous phase etching cavity 210.
The chemical reaction gas includes hydrogen fluoride gas and ammonia, and first air inlet pipeline 202 is used for described the
Hydrogen fluoride gas is passed through inside one chemical gaseous phase etching cavity main body 200, second air inlet pipeline 203 is used for described first
Ammonia is passed through inside chemical gaseous phase etching cavity main body 210；First podzolic horizon and second podzolic horizon include fluorine silicon
Sour ammonium.
As an example, first chuck 201 and second chuck 211 all can be electrostatic chuck or vacuum chucks.
As an example, the chemical gaseous phase etching apparatus can also include third air inlet pipeline 214, the third air inlet pipe
It is connected inside road 214 and the second chemical gaseous phase etching cavity 210, is used for the second chemical gaseous phase etching cavity
Purge gas is passed through in 210, first podzolic horizon and second podzolic horizon that will be evaporated are from the semiconductor substrate 30
Surface is blown off, and the second chemical gaseous phase etching cavity 210 is discharged via the second exhaust pipeline 213.
As an example, the third air inlet pipeline 214 can be but be not limited only to nitrogen pipeline, the third air inlet pipeline
214 can be passed through nitrogen into the second chemical gaseous phase etching cavity 210 purges 30 surface of semiconductor substrate.
Certainly, in other examples, the third air inlet pipeline 214 can also be other inert gas pipings, can be to described second
Inert gas is passed through in chemical gaseous phase etching cavity 210 to purge with the surface to the semiconductor substrate 30.
As an example, 214 tunnel of third air inlet pipe via 210 top of the second chemical gaseous phase etching cavity with it is described
It is connected inside second chemical gaseous phase etching cavity 210；Specifically, described in the gas outlet face of the third air inlet pipeline 214
The surface of semiconductor substrate 30 can make purge gas have maximum purging to 30 surface of semiconductor substrate in this way
Power.
As an example, first air inlet pipeline 202 via 200 top of the first chemical gaseous phase etching cavity with it is described
It is connected inside first chemical gaseous phase etching cavity 200, second air inlet pipeline 203 is etched via first chemical gaseous phase
The top of chamber 200 be connected inside the first chemical gaseous phase etching cavity 200.
As an example, the chemical gaseous phase etching apparatus can also include cooling device 205, the cooling device 205
In in first chuck 201, drop is cooled down for carrying out to the semiconductor substrate 30 being located on first chuck 201
Temperature；The cooling device 205 controls the temperature of first chuck 201 between 30 DEG C~35 DEG C.
As an example, the chemical gaseous phase etching apparatus can also include the 4th air inlet pipeline 206 and the 5th air inlet pipeline
207；Wherein, it is connected inside the 4th air inlet pipeline 206 and the first chemical gaseous phase etching cavity 200, is used for institute
It states in the first chemical gaseous phase etching cavity 200 and is passed through nitrogen；5th air inlet pipeline 207 is etched with first chemical gaseous phase
It is connected inside chamber 200, for being passed through inert gas into the first chemical gaseous phase etching cavity 200.Described 4th into
Air pipe 206 is used to be passed through the first change described in the forward direction of hydrogen fluoride gas into the first chemical gaseous phase etching cavity 200
It learns in gas phase etching cavity 200 and is passed through nitrogen, with to carrying out pressure stabilizing in the first chemical gaseous phase etching cavity 200；Described
Five air inlet pipelines 207 are used in the first chemical gaseous phase etching cavity 20 work to the first chemical gaseous phase etching cavity
Inert gas is continually fed into 200 using as protective gas；The inert gas can be but be not limited only to argon gas.
As an example, the chemical gaseous phase etching apparatus can also include Mixed Zone 208, the Mixed Zone 208
In 200 top of the first chemical gaseous phase etching cavity, and with the first chemical gaseous phase etching cavity 200 internal, described the
One air inlet pipeline 202 and second air inlet pipeline 203 are connected, the fluorination for providing first air inlet pipeline 202
Hydrogen is provided to the first chemical gaseous phase etching cavity after being mixed with the ammonia that second air inlet pipeline 203 provides
In 200.Specifically, the Mixed Zone 208 can be one and the cavity being connected inside first reaction chamber 20.
Embodiment three
Figure 15 is please referred to, the present embodiment also provides a kind of chemical gaseous phase etching apparatus 2, chemical gas described in the present embodiment
Phase etching apparatus 2 is additionally arranged surge chamber 22 and mechanical arm 23 compared to chemical gaseous phase etching apparatus 2 described in embodiment two；
Wherein, the surge chamber 22 is connected with the first chemical gaseous phase etching cavity 20 and the second chemical gaseous phase etching cavity 21；
The mechanical arm 23 is located in the surge chamber 22, for transmitting the semiconductor substrate 30.Specifically, the mechanical arm
23 for the semiconductor substrate 30 to be processed to be sent in the first chemical gaseous phase etching cavity 200, described the
In one chemical gaseous phase etching cavity 200 to the semiconductor substrate 30 processing after, the semiconductor substrate 30 is passed to described the
It is handled in two chemical gaseous phase etching cavities 210, and is changed the semiconductor substrate 30 by described second after being disposed
Learn outflow in gas phase etching cavity 210.
As an example, the first chemical gaseous phase etching cavity 20 described in the present embodiment and second chemical gaseous phase etching
Chamber 21 and the first chemical gaseous phase etching cavity 20 described in embodiment one and the second chemical gaseous phase etching cavity 21 are complete
It is exactly the same, referring specifically to embodiment one, it is not repeated herein.
In conclusion the chemical gaseous phase etching apparatus of the utility model, described method includes following steps: 1) providing half
Conductor substrate, the semiconductor substrate have isolated groove, form heat oxide film, the isolated groove in the semiconductor substrate
Middle formation deposited oxide film, the deposited oxide film have the lug boss for protruding from the semiconductor substrate；2) with chemical gaseous phase
Etching mode removes the lug boss of the heat oxide film and the deposited oxide film on the semiconductor substrate simultaneously,
Wherein, step 2) includes: offer chemical gas phase reaction gas, the chemical gas phase reaction gas pair in the semiconductor substrate
The lug boss of the heat oxide film and the deposited oxide film generates chemical reaction, to be formed on the semiconductor substrate
The second podzolic horizon on the first podzolic horizon and the isolated groove on the semiconductor substrate；And it is partly led described
Body substrate carries out ashing heating, so that first podzolic horizon and second podzolic horizon are decomposed into gas by solid compounds
And it is removed, and retain the deposited oxide film in the isolation trench.The utility model can be to being formed with thermal oxide
The semiconductor substrate surface of film and deposited oxide film is passed through chemical gas phase reaction gas, and chemical reaction gas can be with the thermal oxide
Film and deposited oxide film reaction generate the first podzolic horizon and the second podzolic horizon, then again using ashing heating removal first ash
Change layer and second podzolic horizon；It is generally in identical removal rate that the utility model, which has heat oxide film and deposited oxide film,
And it is in isotropism to the removal of heat oxide film and deposited oxide layer, it will not be in the intersection of heat oxide film and deposited oxide film
Cavity blemish is formed, also only can generate small-sized small defect of pulling back in the lower section on barrier layer, it will not even be on barrier layer
Lower section generate and pull back defect, so as to effectively avoid the generation of device creepage, and then ensure the performance of device.
The above embodiments are only illustrative of the principle and efficacy of the utility model, and not for limitation, this is practical new
Type.Any person skilled in the art can all carry out above-described embodiment under the spirit and scope without prejudice to the utility model
Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the revealed essence of the utility model
All equivalent modifications or change completed under mind and technical idea, should be covered by the claim of the utility model.
Claims (9)
1. a kind of chemical gaseous phase etching apparatus, which is characterized in that the equipment is used to remove the heat oxide film in semiconductor substrate
With deposited oxide film, the equipment includes:
First chemical gaseous phase etching cavity, the first chemical gaseous phase etching cavity include:
First chemical gaseous phase etching cavity main body；
First chuck is located in the first chemical gaseous phase etching cavity main body, for adsorbing the semiconductor substrate；
First air inlet pipeline is connected with the first chemical gaseous phase etching cavity body interior；
Second air inlet pipeline is connected with the first chemical gaseous phase etching cavity body interior, first air inlet pipeline with
Second air inlet pipeline is used to be passed through chemical gas phase reaction gas to the first chemical gaseous phase etching cavity body interior；Institute
It states chemical gas phase reaction gas and chemical reaction is generated to the heat oxide film and the deposited oxide film, to be served as a contrast in the semiconductor
The second podzolic horizon on the first podzolic horizon and isolated groove on the semiconductor substrate is formed on bottom；And
First exhaust pipeline is connected with the first chemical gaseous phase etching cavity body interior, for chemical by described first
The residual gas of gas phase etching cavity body interior is discharged；
Second chemical gaseous phase etching cavity, the second chemical gaseous phase etching cavity include: the second chemical gaseous phase etching cavity master
Body；
Second chuck is located in the second chemical gaseous phase etching cavity main body, is formed with first ash for absorption surface
Change the semiconductor substrate of layer and second podzolic horizon；
Heating device is located in second chuck, for being formed with first podzolic horizon and second ashing to surface
The semiconductor substrate of layer carries out ashing heating, so that first podzolic horizon and second podzolic horizon are by solid-state chemical combination
Object is decomposed into gas and is removed；And
Second exhaust pipeline is connected with the second chemical gaseous phase etching cavity body interior.
2. equipment according to claim 1, it is characterised in that: the chemical reaction gas includes hydrogen fluoride gas and ammonia
Gas, first air inlet pipeline is used to be passed through hydrogen fluoride gas to the first chemical gaseous phase etching cavity body interior, described
Second air inlet pipeline is used to be passed through ammonia to the first chemical gaseous phase etching cavity body interior；First podzolic horizon and institute
Stating the second podzolic horizon includes ammonium fluosilicate.
3. equipment according to claim 1, it is characterised in that: the equipment further includes third air inlet pipeline, the third
Air inlet pipeline is connected with the second chemical gaseous phase etching cavity body interior, is used for the second chemical gaseous phase etch chamber
It is passed through purge gas in the main body of room, first podzolic horizon and second podzolic horizon that will be evaporated are from the semiconductor substrate
Surface is blown off, and the second chemical gaseous phase etching cavity main body is discharged via the second exhaust pipeline.
4. equipment according to claim 3, it is characterised in that: the third air inlet pipeline is via second chemical gaseous phase
Etching cavity body top is connected with the second chemical gaseous phase etching cavity body interior.
5. equipment according to claim 1, it is characterised in that: first air inlet pipeline is via first chemical gaseous phase
Etching cavity body top is connected with the first chemical gaseous phase etching cavity body interior, second air inlet pipeline via
The first chemical gaseous phase etching cavity body top is connected with the first chemical gaseous phase etching cavity body interior.
6. equipment according to claim 1, it is characterised in that: the equipment further includes cooling device, the cooling device
In first chuck, for being cooled down to the semiconductor substrate being located on first chuck.
7. equipment according to claim 1, it is characterised in that: the equipment further includes the 4th air inlet pipeline and the 5th air inlet
Pipeline；Wherein, the 4th air inlet pipeline is connected with the first chemical gaseous phase etching cavity body interior, is used for described
Nitrogen is passed through in first chemical gaseous phase etching cavity main body；5th air inlet pipeline and the first chemical gaseous phase etching cavity
Body interior is connected, for being passed through inert gas into the first chemical gaseous phase etching cavity main body.
8. equipment according to claim 1, it is characterised in that: the equipment further includes Mixed Zone, the Mixed Zone
Positioned at the first chemical gaseous phase etching cavity body top, and with the first chemical gaseous phase etching cavity body interior, institute
It states the first air inlet pipeline and second air inlet pipeline is connected, be used for first air inlet pipeline and second air inlet pipe
The chemical gas phase reaction gas that road provides is provided in the first chemical gaseous phase etching cavity main body after being mixed.
9. equipment according to any one of claim 1 to 8, it is characterised in that: the equipment further include:
Surge chamber is connected with the first chemical gaseous phase etching cavity and the second chemical gaseous phase etching cavity；
Mechanical arm is located in the surge chamber, for transmitting the semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820433992.0U CN208368468U (en) | 2018-03-29 | 2018-03-29 | Chemical gaseous phase etching apparatus |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820433992.0U CN208368468U (en) | 2018-03-29 | 2018-03-29 | Chemical gaseous phase etching apparatus |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108447774A (en) * | 2018-03-29 | 2018-08-24 | 睿力集成电路有限公司 | Heat oxide film is removed simultaneously and removes the method and apparatus of deposited oxide film |
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2018
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108447774A (en) * | 2018-03-29 | 2018-08-24 | 睿力集成电路有限公司 | Heat oxide film is removed simultaneously and removes the method and apparatus of deposited oxide film |
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