CN108447774A - Heat oxide film is removed simultaneously and removes the method and apparatus of deposited oxide film - Google Patents
Heat oxide film is removed simultaneously and removes the method and apparatus of deposited oxide film Download PDFInfo
- Publication number
- CN108447774A CN108447774A CN201810268947.9A CN201810268947A CN108447774A CN 108447774 A CN108447774 A CN 108447774A CN 201810268947 A CN201810268947 A CN 201810268947A CN 108447774 A CN108447774 A CN 108447774A
- Authority
- CN
- China
- Prior art keywords
- gaseous phase
- chemical gaseous
- gas
- phase etching
- etching cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
Abstract
The present invention provides a kind of while removing heat oxide film and removing the method and apparatus of deposited oxide film, includes the following steps：1）Semi-conductive substrate is provided, semiconductor substrate has isolated groove, forms heat oxide film in semiconductor substrate, deposited oxide film is formed in isolated groove；2）Chemical gas phase reaction gas is provided in semiconductor substrate, chemical gas phase reaction gas generates chemical reaction to heat oxide film and deposited oxide film, to form the second podzolic horizon on the first podzolic horizon and isolated groove on a semiconductor substrate on a semiconductor substrate；Semiconductor substrate is subjected to ashing heating, so that the first podzolic horizon and the second podzolic horizon are decomposed into gas by solid compounds and are removed.The present invention will not form cavity blemish in the intersection of heat oxide film and deposited oxide film, it is possible to prevente effectively from the generation of device creepage, and then ensure the performance of device.
Description
Technical field
The invention belongs to semiconductor process technique fields, and heat oxide film and removal deposition are removed simultaneously more particularly to a kind of
The method and apparatus of oxidation film.
Background technology
Silicon oxide layer is among semiconductor applications are widely used in the preparation process of semiconductor devices, and in actual process
In, according to device architecture and the needs of technique, it is sometimes necessary to by semiconductor substrate the silicon oxide layer of some regions go
It removes.Existing silicon oxide layer minimizing technology generally uses wet method removal technique；However, in semiconductor processing, silicon oxide layer
Formation process include many kinds.And for the silicon oxide layer of different process formation since it is with different consistency and spy
Property, when being removed to silicon oxide layer using wet method removal technique, can have to the silicon oxide layer that different process is formed different
Removal rate, this will form cavity blemish in the intersection of two kinds of different process, and can be formed and be extended to below barrier layer
It pulls back defect.For example, heat oxide film 11 is being formed with to 10 surface of semiconductor substrate as shown in Figure 1 and is being covered in the part heat
The barrier layer 14 on 11 surface of oxidation film, when being removed to the exposed heat oxide film 11, since the semiconductor serves as a contrast
It is formed in bottom 10 other than the heat oxide film 11 positioned at 10 surface of the semiconductor substrate, is also formed with deposited oxide
Different works are respectively adopted from the heat oxide film 11 as fleet plough groove isolation structure (STI), the deposited oxide film 12 in film 12
Skill is formed, and when removing the exposed heat oxide film 11 using wet method, can be also carried out at the same time to the deposited oxide film 12
It removes, and since wet etching solution has different removal rates to the heat oxide film 11 and the deposited oxide film 12, it is special
It is not the removal rate being more than to the removal rate of the deposited oxide film 12 when wet etching solution to the heat oxide film 11
When, as shown in Fig. 2, after the exposed heat oxide film 11 is removed, it can be in the deposited oxide film 12 and original hot oxygen
The intersection for changing film 11 forms cavity blemish 13, and is formed and extended to one below the barrier layer 14 below the barrier layer 14
The defect 15 of pulling back of depthkeeping degree.Described hole defect 13 and the presence for pulling back defect 15 may result in device and generate electric leakage
The problems such as stream, to influence the performance of device.
Invention content
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide it is a kind of remove simultaneously heat oxide film and
The method and apparatus for removing deposited oxide film, when for solving the removal technique removal silicon oxide layer in the prior art using wet method
It is existing to form cavity blemish in the intersection of two kinds of different process, and can be formed extend to below barrier layer pull back it is scarce
The problem of falling into, generating leakage current etc. so as to cause device, and then influence the performance of device.
In order to achieve the above objects and other related objects, the present invention provides one kind while removing heat oxide film and removing and deposits
The method of oxidation film, method that is described while removing heat oxide film and remove deposited oxide film include the following steps：
1) semi-conductive substrate is provided, the semiconductor substrate has isolated groove, heat is formed in the semiconductor substrate
Oxidation film forms deposited oxide film in the isolated groove；
2) heat oxide film on the semiconductor substrate and described heavy is removed simultaneously with chemical gaseous phase etching mode
Product oxidation film, wherein step 2) includes：Chemical gas phase reaction gas, the chemical gaseous phase are provided in the semiconductor substrate
Reaction gas generates chemical reaction to the heat oxide film and the deposited oxide film, to be formed on the semiconductor substrate
The second podzolic horizon on the first podzolic horizon and the isolated groove in the semiconductor substrate；And by the semiconductor
Substrate carries out ashing heating so that first podzolic horizon and second podzolic horizon by solid compounds be decomposed into gas and
It is removed, and retains the deposited oxide film in the isolation trench.
Preferably, the deposited oxide film has the lug boss for protruding from the heat oxide film.
Preferably, first podzolic horizon includes the entirety of the heat oxide film, and second podzolic horizon includes described heavy
A part for product oxidation film.
Preferably, the chemical gas phase reaction gas provided in step 2) includes hydrogen fluoride gas and ammonia.
Preferably, in step 2), the ratio between the ammonia and the gas flow of the hydrogen fluoride gas are between 0.9:1~1.1:
1。
Preferably, in step 2), the gas flow of the ammonia between the standard milliliters of 20 standard milliliters/minute~100/point
Clock, the gas flow of the hydrogen fluoride gas is between 20 standard milliliters/minute~100 standard milliliters/minute；To the semiconductor
Substrate surface provides the time of the chemical gas phase reaction gas between 5 seconds~60 seconds simultaneously；The temperature of the semiconductor substrate
Between 30 DEG C~35 DEG C.
Preferably, in step 2), the purity of the ammonia is more than 99.999%, and the purity of the hydrogen fluoride gas is not less than
99.999%.
Preferably, in step 2), the chemical reaction is implemented in the first chemical gaseous phase etching cavity.
Preferably, be passed through into the first chemical gaseous phase etching cavity in the chemical reaction hydrogen fluoride gas and
While the ammonia, also inert gas is passed through into the first chemical gaseous phase etching cavity.
Preferably, in step 2), the purity of the inert gas is not less than 99%.
Preferably, further include before the chemical gas phase reaction gas is passed through into the first chemical gaseous phase etching cavity
Following steps：
It is passed through nitrogen and inert gas into the first chemical gaseous phase etching cavity, first chemical gaseous phase is carved
The indoor pressure stability of chamber is lost in first pressure；
Under the conditions of the first pressure, the nitrogen and lazy is continually fed into the first chemical gaseous phase etching cavity
While property gas, ammonia is passed through into the first chemical gaseous phase etching cavity；
Stop being passed through nitrogen into the first chemical gaseous phase etching cavity, it will be in the first chemical gaseous phase etching cavity
Pressure be adjusted to second pressure；
Further include following steps between the chemical reaction and ashing heating：
Stop being passed through the hydrogen fluoride gas into the first chemical gaseous phase etching cavity, continue to first chemistry
Ammonia and inert gas are passed through in gas phase etching cavity.
Preferably, first podzolic horizon and second podzolic horizon include ammonium fluosilicate.
Preferably, during the semiconductor substrate being carried out ashing heating, what the semiconductor substrate was heated to
Temperature is between 140 DEG C~200 DEG C.
Preferably, in step 2), while the semiconductor substrate is carried out ashing heating, to the semiconductor substrate table
Face is provided nitrogen and is purged with the surface to the semiconductor substrate.
Preferably, the semiconductor substrate ashing heating is carried out to include the following steps：
Surface is formed with first podzolic horizon and second podzolic horizon the semiconductor substrate carry out ashing plus
While hot, first time purging is carried out to the semiconductor substrate surface with first gas flow using the nitrogen；
The flow of the nitrogen is adjusted to second gas flow, second of purging is carried out to the semiconductor substrate surface,
Wherein, the second gas flow is less than the first gas flow.
Preferably, the first gas flow is between 1500 standard milliliters/minute~2500 standard milliliters/minute, and first
The purging pressure of secondary purging is between the millitorr of 1500 millitorrs~2500；The second gas flow between 200 standard milliliters/minute~
400 standard milliliters/minute, the purging pressure of second purging is between the millitorr of 200 millitorrs~400.
Preferably, using the nitrogen with the first gas flow to the semiconductor substrate surface purged when
Between between 90 seconds~110 seconds, the semiconductor substrate surface is purged with the second gas flow using the nitrogen
Time between 10 seconds~30 seconds.
Preferably, in step 2), the semiconductor substrate is subjected to ashing heating and is implemented in the second chemical gaseous phase etch chamber
Interior, ashing heating while be passed through into the second chemical gaseous phase etching cavity nitrogen to the semiconductor substrate surface into
Row purging.
Preferably, further include to the second chemical gaseous phase etch chamber before the semiconductor substrate being carried out ashing heating
Interior is passed through the step of nitrogen, by the indoor pressure stability of the second chemical gaseous phase etch chamber in preset pressure.
The present invention also provides a kind of chemical gaseous phase etching apparatus, the chemical gaseous phase etching apparatus is for removing semiconductor lining
Heat oxide film on bottom and deposited oxide film, the chemical gaseous phase etching apparatus include：
First chemical gaseous phase etching cavity, the first chemical gaseous phase etching cavity include：
First chemical gaseous phase etching cavity main body；
First chuck is located in the first chemical gaseous phase etching cavity main body, for adsorbing the semiconductor substrate；
First air inlet pipeline is connected with the first chemical gaseous phase etching cavity body interior；
Second air inlet pipeline is connected with the first chemical gaseous phase etching cavity body interior, first air inlet pipe
Road is used to be passed through chemical gas phase reaction gas to the first chemical gaseous phase etching cavity body interior with second air inlet pipeline
Body；The chemical gas phase reaction gas generates chemical reaction to the heat oxide film and the deposited oxide film, with described half
The second podzolic horizon on the first podzolic horizon and the isolated groove on the semiconductor substrate is formed on conductor substrate；
First exhaust pipeline is connected with the first chemical gaseous phase etching cavity body interior, is used for described first
The residual gas of chemical gaseous phase etching cavity body interior is discharged；
Second chemical gaseous phase etching cavity, the second chemical gaseous phase etching cavity include：
Second chemical gaseous phase etching cavity main body；
Second chuck is located in the second chemical gaseous phase etching cavity main body, and described the is formed with for absorption surface
The semiconductor substrate of one podzolic horizon and second podzolic horizon；
Heating device is located in second chuck, for being formed with first podzolic horizon and described second to surface
The semiconductor substrate of podzolic horizon carries out ashing heating, so that first podzolic horizon and second podzolic horizon are by solid-state
Compound is decomposed into gas and is removed；And
Second exhaust pipeline is connected with the second chemical gaseous phase etching cavity body interior.
Preferably, the chemical reaction gas includes hydrogen fluoride gas and ammonia, and first air inlet pipeline is used for institute
It states the first chemical gaseous phase etching cavity body interior and is passed through hydrogen fluoride gas, second air inlet pipeline is used to change to described first
It learns gas phase etching cavity body interior and is passed through ammonia；First podzolic horizon and second podzolic horizon include ammonium fluosilicate.
Preferably, the chemical gaseous phase etching apparatus further includes third air inlet pipeline (214), the third air inlet pipeline with
The second chemical gaseous phase etching cavity body interior is connected, for leading into the second chemical gaseous phase etching cavity main body
Enter purge gas, first podzolic horizon of evaporation and second podzolic horizon blown off from the semiconductor substrate surface,
And the second chemical gaseous phase etching cavity main body is discharged via the second exhaust pipeline.
Preferably, the third air inlet pipeline is via the second chemical gaseous phase etching cavity body top and described second
Chemical gaseous phase etching cavity body interior is connected.
Preferably, first air inlet pipeline is via the first chemical gaseous phase etching cavity body top and described first
Chemical gaseous phase etching cavity body interior is connected, and second air inlet pipeline is via the first chemical gaseous phase etching cavity master
It is connected with the first chemical gaseous phase etching cavity body interior at the top of body.
Preferably, the chemical gaseous phase etching apparatus further includes cooling device, and the cooling device is located at described first and blocks
In disk, for being cooled down to the semiconductor substrate on first chuck.
Preferably, the chemical gaseous phase etching apparatus further includes the 4th air inlet pipeline and the 5th air inlet pipeline；Wherein, described
4th air inlet pipeline is connected with the first chemical gaseous phase etching cavity body interior, for being carved to first chemical gaseous phase
It is passed through nitrogen in erosion chamber body；5th air inlet pipeline is connected with the first chemical gaseous phase etching cavity body interior
It is logical, for being passed through inert gas into the first chemical gaseous phase etching cavity main body.
Preferably, the chemical gaseous phase etching apparatus further includes Mixed Zone, and the Mixed Zone is located at described first and changes
Learn gas phase etching cavity body top, and with the first chemical gaseous phase etching cavity body interior, first air inlet pipeline
And second air inlet pipeline is connected, the chemical gas for providing first air inlet pipeline and second air inlet pipeline
Phase reaction gas is provided to after being mixed in the first chemical gaseous phase etching cavity main body.
Preferably, the chemical gaseous phase etching apparatus further includes：
Surge chamber is connected with the first chemical gaseous phase etching cavity and the second chemical gaseous phase etching cavity；
Mechanical arm is located in the surge chamber, for transmitting the semiconductor substrate.
As described above, the present invention while removal heat oxide film and remove deposited oxide film method and apparatus, have with
Lower advantageous effect：The present invention can be passed through chemical gaseous phase to the semiconductor substrate surface for being formed with heat oxide film and deposited oxide film
Reaction gas, chemical reaction gas can generate the first podzolic horizon and the second ashing with the heat oxide film and deposited oxide film reaction
Layer then removes first podzolic horizon and second podzolic horizon using ashing heating again；The present invention is to heat oxide film and sinks
It is in generally identical removal rate that product oxidation film, which has, and it is in isotropism to the removal of heat oxide film and deposited oxide layer, no
Cavity blemish can be formed in the intersection of heat oxide film and deposited oxide film, also only will produce in the lower section on barrier layer small-sized
Small defect of pulling back, will not even generate and pull back defect in the lower section on barrier layer, so as to effectively avoid device creepage
Generation, and then ensure the performance of device.
Description of the drawings
Fig. 1 is shown as being formed with deposited oxide film inside semiconductor substrate in the prior art, surface is formed with heat oxide film
Cross section structure schematic diagram.
Fig. 2 is shown with existing wet method removal technique by the structure obtained after heat oxide film removal exposed in Fig. 1
Cross section structure schematic diagram.
Removal heat oxide film and the method for removing deposited oxide film while Fig. 3 is shown as providing in the embodiment of the present invention one
Flow chart.
Removal heat oxide film and removal deposited oxide film while fig. 4 to fig. 6 is shown as providing in the embodiment of the present invention one
Method in the structural schematic diagram that is presented of step 1).
Removal heat oxide film and removal deposited oxide film while Fig. 7 to Fig. 9 is shown as providing in the embodiment of the present invention one
Method step 2) in formed on a semiconductor substrate on the first podzolic horizon and isolated groove on a semiconductor substrate
Structural schematic diagram after second podzolic horizon.
Removal heat oxide film and removal deposited oxide while Figure 10 to Figure 12 is shown as providing in the embodiment of the present invention one
Semiconductor substrate is subjected to ashing heating so that the first podzolic horizon and the second podzolic horizon are by solid state in the step 2) of the method for film
It closes object and is decomposed into gas and the structural schematic diagram after being removed.
Figure 13 is shown as the etching of the first chemical gaseous phase in the chemical gaseous phase etching apparatus provided in the embodiment of the present invention two
The structural schematic diagram of chamber.
Figure 14 is shown as the etching of the second chemical gaseous phase in the chemical gaseous phase etching apparatus provided in the embodiment of the present invention two
The structural schematic diagram of chamber.
Figure 15 is shown as the structural schematic diagram of the chemical gaseous phase etching apparatus provided in the embodiment of the present invention three.
Reference numerals explanation
10 semiconductor substrates
11 heat oxide films
12 deposited oxide films
13 cavity blemish
14 barrier layers
15 pull back defect
2 chemical gaseous phase etching apparatus
20 first chemical gaseous phase etching cavities
200 first chemical gaseous phase etching cavity main bodys
201 first chucks
202 first air inlet pipelines
203 second air inlet pipelines
204 first exhaust pipelines
205 cooling devices
206 the 4th air inlet pipelines
207 the 5th air inlet pipelines
208 Mixed Zones
21 second chemical gaseous phase etching cavities
210 second chemical gaseous phase etching cavity main bodys
211 second chucks
212 heating devices
213 second exhaust pipelines
214 third air inlet pipelines
22 surge chambers
23 mechanical arms
30 semiconductor substrates
31 heat oxide films
311 first podzolic horizons
32 deposited oxide films
321 lug bosses
322 second podzolic horizons
33 barrier layers
34 small defects of pulling back
Specific implementation mode
Illustrate that embodiments of the present invention, those skilled in the art can be by this specification below by way of specific specific example
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Please refer to Fig. 3~Figure 15.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, though package count when only display is with related component in the present invention rather than according to actual implementation in diagram
Mesh, shape and size are drawn, when actual implementation form, quantity and the ratio of each component can be a kind of random change, and its
Assembly layout form may also be increasingly complex.
Embodiment one
Referring to Fig. 3, the present invention also provides method that is a kind of while removing heat oxide film and remove deposited oxide film, it is described
Method include the following steps：
1) semi-conductive substrate 30 is provided, the semiconductor substrate 30 has isolated groove, in the semiconductor substrate 30
Heat oxide film 31 is formed, deposited oxide film 32 is formed in the isolated groove；
2) heat oxide film on the semiconductor substrate and described heavy is removed simultaneously with chemical gaseous phase etching mode
Product oxidation film, wherein step 2) includes：Chemical gas phase reaction gas, the chemical gaseous phase are provided in the semiconductor substrate
Reaction gas generates chemical reaction to the heat oxide film and the deposited oxide film, to be formed on the semiconductor substrate
The second podzolic horizon on the first podzolic horizon and the isolated groove in the semiconductor substrate；And by the semiconductor
Substrate carries out ashing heating so that first podzolic horizon and second podzolic horizon by solid compounds be decomposed into gas and
It is removed, and retains the deposited oxide film in the isolation trench.
In step 1), S1 steps and the fig. 4 to fig. 6 in Fig. 3 are please referred to, semi-conductive substrate 30 is provided, it is described partly to lead
Body substrate 30 has isolated groove, forms heat oxide film 31 in the semiconductor substrate 30, deposition is formed in the isolated groove
Oxidation film 32.
As an example, deposited oxide film 32 can be using high density plasma CVD technique (HDP) or
Spin-on oxide medium layer process (SOD) formation.
In one example, as shown in figure 4, the deposited oxide layer 32 has the protrusion knot for protruding from the heat oxide film 31
Structure 321, the upper surface of the lug boss 321 are higher than the upper surface of the heat oxide film 31；Certainly, due to different processing procedure knots
Structure, in another example, as shown in figure 5, the upper surface of the deposited oxide film 32 can also be upper with the heat oxide film 31
Surface flush；In another example, as shown in fig. 6, the upper surface of the deposited oxide film 32 may also be below the hot oxygen
Change the upper surface of film 31.
In step 2), the S2 steps and Fig. 7 to Figure 12 in Fig. 3 are please referred to, is removed simultaneously with chemical gaseous phase etching mode
The heat oxide film 31 in the semiconductor substrate 30 and the deposited oxide film 32, wherein step 2) includes：To described
Chemical gas phase reaction gas is provided in semiconductor substrate 30, the chemical gas phase reaction gas is to the heat oxide film 31 and described
Deposited oxide film 32 generates chemical reaction, to be formed in first in the semiconductor substrate 30 in the semiconductor substrate 30
The second podzolic horizon 322 on podzolic horizon 311 and the isolated groove；And the semiconductor substrate 30 is subjected to ashing and is added
Heat, so that first podzolic horizon 311 and second podzolic horizon 322 are decomposed into gas by solid compounds and are removed,
And the deposited oxide film 32 of reservation in the isolation trench.
As an example, first podzolic horizon 311 includes the entirety of the heat oxide film 31, the i.e. thermal oxide of exposure
31 total overall reaction of film is at first podzolic horizon 311；Second podzolic horizon 322 includes one of the deposited oxide film 32
Point, i.e., some reaction of the described deposited oxide film 32 is at second podzolic horizon 322.
As an example, as shown in fig. 7, protruding from the heat oxide film when the deposited oxide film 32 has as shown in Figure 4
When 31 lug boss 321, the lug boss 321 of the deposited oxide film 32 is reacted into second podzolic horizon 322；When
The upper surface of the deposited oxide film 32 as shown in Figure 5 with the upper surface flush of the heat oxide film 31 or the deposited oxide
When the upper surface of film 32 is less than the upper surface of the heat oxide film 31 as shown in Figure 6, a part for the deposited oxide film 32 is anti-
It should be at second podzolic horizon 322 (as can be seen from figures 8 and 9).
As an example, the thickness of first podzolic horizon 311 and second podzolic horizon 322 is in generally identical, the i.e. step
The thickness of the heat oxide film 31 of middle consumption removal and the deposited oxide film 32 of removal is in generally identical.
As an example, the chemical gas phase reaction gas provided in the semiconductor substrate 30 includes hydrogen fluoride gas
And ammonia, first podzolic horizon 311 and second podzolic horizon 322 include ammonium fluosilicate；The hydrogen fluoride and the ammonia
Gas forms fluosilicic acid with the heat oxide film and the oxidation pasc reaction of the deposited oxide film surface on the silicon oxide layer surface
The reaction formula of ammonium is as follows：
SiO2+4HF+4NH3→SiF4+2H2O+4NH3
SiF4+2HF+2NH3→(NH4)2SiF6
As an example, the ratio between the ammonia and the gas flow of the hydrogen fluoride gas can be set according to actual needs
It is fixed, it is preferable that the ratio between the ammonia and the gas flow of the hydrogen fluoride gas are between 0.9:1~1.1:1, it is further preferable that
In the present embodiment, the ratio between the ammonia and the gas flow of the hydrogen fluoride gas are 1:1.
Specifically, the gas flow of the ammonia is between 20 standard milliliters/minute~100 standard milliliters/minute, the fluorine
Change the gas flow of hydrogen between 20 standard milliliters/minute~100 standard milliliters/minute；To the semiconductor substrate surface
The time of the hydrogen fluoride gas and the ammonia is provided between 5 seconds~60 seconds simultaneously, it is preferable that the semiconductor substrate table
Face provides the time of the hydrogen fluoride gas and the ammonia between 5 seconds~20 seconds simultaneously；The temperature of the semiconductor substrate is situated between
In 30 DEG C~35 DEG C.
As an example, the semiconductor substrate 30 can be placed in one first chemical gaseous phase etching cavity, to described
It is passed through the hydrogen fluoride gas and the ammonia simultaneously in one chemical gaseous phase etching cavity.
As an example, the purity of the ammonia is more than 99.999%, the purity of the hydrogen fluoride gas is not less than
99.999%.
As an example, being passed through the same of the hydrogen fluoride gas and the ammonia into the first chemical gaseous phase etching cavity
When, also inert gas is passed through into the first chemical gaseous phase etching cavity.Preferably, the purity of the inert gas is not less than
99%, the inert gas may include but be not limited only to Ar.
As an example, may be used also before being passed through the chemical gas phase reaction gas into the first chemical gaseous phase etching cavity
To include the following steps：
It is passed through nitrogen and inert gas into the first chemical gaseous phase etching cavity, first chemical gaseous phase is carved
Lose the indoor pressure stability of chamber in first pressure, the first pressure can be but be not limited only to 1500mT (millitorr)~
2500mT；
Under the conditions of the first pressure, the nitrogen and lazy is continually fed into the first chemical gaseous phase etching cavity
While property gas, ammonia is passed through into the first chemical gaseous phase etching cavity；It is carved at the same time to first chemical gaseous phase
Before being passed through ammonia and hydrogen fluoride gas in erosion chamber first ammonia, Ke Yi are passed through into the first chemical gaseous phase etching cavity
It is passed through into the first chemical gaseous phase etching cavity before hydrogen fluoride gas so that the first chemical gaseous phase etching cavity fills
Full ammonia, to prevent the internal-response of the hydrogen fluoride gas and the first chemical gaseous phase etching cavity to damage described first
Chemical gaseous phase etching cavity；
Stop being passed through nitrogen into the first chemical gaseous phase etching cavity, it will be in the first chemical gaseous phase etching cavity
Pressure be adjusted to second pressure, the second pressure can be but be not limited only to 20mT (millitorr)~100mT；
As an example, the chemical reaction can also include the following steps with ashing heating：
Stop being passed through the hydrogen fluoride gas into the first chemical gaseous phase etching cavity, continue to first chemistry
Ammonia and inert gas are passed through in gas phase etching cavity, it can be by residual in the first chemical gaseous phase etching cavity in the step
The hydrogen fluoride gas exclude completely.
It should be noted that by the first chemical gaseous phase etch chamber after above-mentioned steps and by the semiconductor substrate 30
Before indoor taking-up, any gas can also be passed through into the first chemical gaseous phase etching cavity including stopping, and will be described
The step of first indoor residual gas of chemical gaseous phase etch chamber is completely exhausted out.
As an example, carrying out ashing heating to the semiconductor substrate 30, the ammonium fluosilicate is by solid compounds point
Solution is that the reaction equation of gas is as follows：
(NH4)2SiF6→SiF4+2HF+2NH3
As an example, surface to be formed with to the semiconductor substrate 30 of first podzolic horizon and second podzolic horizon
While carrying out ashing heating, nitrogen also is provided with the surface to the semiconductor substrate 30 to 30 surface of the semiconductor substrate
It is purged.Specifically, surface to be formed with to the semiconductor substrate 30 of first podzolic horizon and second podzolic horizon
It is placed in the second chemical gaseous phase etching cavity and carries out ashing heating, and be passed through simultaneously into the second chemical gaseous phase etching cavity
Nitrogen purges 30 surface of the semiconductor substrate.
As an example, surface to be formed with to the semiconductor substrate 30 of first podzolic horizon and second podzolic horizon
Ashing heating is carried out, so that first podzolic horizon and second podzolic horizon on 30 surface of the semiconductor substrate are by solid-state
Compound is decomposed into gas and is removed and includes the following steps：
By surface be formed with the semiconductor substrate 30 of first podzolic horizon 311 and second podzolic horizon 322 into
While row ashing heating, 30 surface of the semiconductor substrate blow for the first time with first gas flow using the nitrogen
It sweeps；
The flow of the nitrogen is adjusted to second gas flow to blow 30 surface of the semiconductor substrate for the second time
It sweeps, wherein the second gas flow is less than the first gas flow.
As an example, the first gas flow is between 1500 standard milliliters/minute~2500 standard milliliters/minute, institute
The purging pressure of purging for the first time is stated between the millitorr of 1500 millitorrs~2500；The second gas flow between 200 standard milliliters/
Minute~400 standard milliliters/minute, the purging pressure of second purging is between the millitorr of 200 millitorrs~400.
As an example, being purged to 30 surface of the semiconductor substrate with the first gas flow using the nitrogen
Time between 90 seconds~110 seconds, it is preferable that using the nitrogen with the first gas flow to the semiconductor substrate 30
The time that surface is purged was between 100 seconds；Using the nitrogen with the second gas flow to the semiconductor substrate 30
The time that surface is purged was between 10 seconds~30 seconds.The semiconductor is served as a contrast using different gas flows in the different stages
The surface at bottom 30 is purged, and the gas flow of follow-up phase and purging pressure respectively less than in the gas flow of last stage and are blown
Sweep pressure, it can be ensured that reaction product is made to be gone out more thorough under lower pressure.
As an example, during the semiconductor substrate is carried out ashing heating, the semiconductor substrate 30 is heated
Temperature extremely is between 140 DEG C~200 DEG C.
As an example, can also include to the described second chemical gas before the semiconductor substrate 30 is carried out ashing heating
The step of nitrogen being passed through in phase etching cavity, by the indoor pressure stability of the second chemical gaseous phase etch chamber in default pressure
Power.As an example, the preset pressure can be between the millitorr of 1500 millitorrs~2500.The semiconductor substrate 30 is ashed
The time of nitrogen is passed through in second chemical gaseous phase etching cavity described in the forward direction of heating to be set according to actual needs, excellent
Selection of land carries out the semiconductor substrate 30 to be passed through nitrogen in second chemical gaseous phase etching cavity described in the forward direction of ashing heating
The semiconductor substrate 30, it is further preferable that in the present embodiment, can be carried out ashing heating by the time between 5 seconds~15 seconds
The time that nitrogen is passed through in second chemical gaseous phase etching cavity 210 described in forward direction is 10 seconds.
It should be noted that being in due to having generally to the heat oxide film 31 and the deposited oxide film 32 in the above method
Identical removal rate, when the upper surface for executing step 2) foregoing description lug boss 321 is as shown in Figure 4 higher than the hot oxygen
The structure obtained when changing the upper surface of film 31, after step 2) is as shown in Figure 10, i.e., when the heat oxide film 31 is completely removed,
The lug boss 321 be only removed with the comparable part of 31 thickness of the oxidation film, still there is the part lug boss 321 to deposit
, that is, the upper surface of the deposited oxide film 32 retained is higher than the upper surface of the semiconductor substrate 30；When execution step
2) upper surface of foregoing description deposited oxide film 32 be as shown in Figure 5 with the upper surface flush of the heat oxide film 31, step
2) obtained structure is as shown in figure 11 after, the upper surface of the deposited oxide film 32 of reservation still with the semiconductor substrate 30
Upper surface flush；When the upper surface for executing step 2) foregoing description deposited oxide film 32 is to be less than described half as shown in Figure 6
When the upper surface of conductor substrate 30, the structure obtained after step 2) is as shown in figure 12, the deposited oxide film 32 of reservation it is upper
Surface is still below the upper surface of the semiconductor substrate 30.
The present invention can be to 30 surface of semiconductor substrate for being formed with the heat oxide film 31 and the deposited oxide film 32
It is passed through chemical gas phase reaction gas, chemical reaction gas can react generation first with the heat oxide film 31 and deposited oxide film 32
Podzolic horizon 311 and the second podzolic horizon 322 then remove first podzolic horizon 311 and second ash using ashing heating again
Change layer 322；It is in identical removal rate that the present invention, which has generally the heat oxide film 31 and the deposited oxide film 32, and its is right
The removal of the heat oxide film 31 and the deposited oxide layer 32 is in isotropism, will not be in the heat oxide film 31 and described heavy
The intersection of product oxidation film 32 forms cavity blemish, also only will produce small-sized small time in the lower section on the barrier layer 33
Defect 34 (as shown in Figure 10 to Figure 12) is drawn, defect of pulling back will not even be generated in the lower section on the barrier layer 33, so as to
The generation of device creepage effectively is avoided, and then ensures the performance of device.
Embodiment two
3 and Figure 14 is please referred to Fig.1, the present embodiment provides a kind of chemical gaseous phase etching apparatus is provided, the chemical gaseous phase is carved
Erosion equipment is used to execute the method as described in embodiment one, that is, the heat oxide film and deposition oxygen for being used to remove in semiconductor substrate
Change film, the chemical gaseous phase etching apparatus includes：First chemical gaseous phase etching cavity 20, the first chemical gaseous phase etching cavity
20 include：First chemical gaseous phase etching cavity main body 200；First chuck 201, first chuck 201 are located at described first and change
It learns in gas phase etching cavity 200, for adsorbing the semiconductor substrate 30；First air inlet pipeline 202, first air inlet pipeline
202 be connected inside the first chemical gaseous phase etching cavity main body 200；Second air inlet pipeline 203, second air inlet pipe
Be connected inside road 203 and the first chemical gaseous phase etching cavity 200, first air inlet pipeline 202 with described second into
Air pipe 203 is used to be passed through chemical gas phase reaction gas to the inside of the first chemical gaseous phase etching cavity main body 200；Describedization
It learns gas phase reaction gas and chemical reaction is generated to the heat oxide film and the deposited oxide film, on the semiconductor substrate
Form the second podzolic horizon on the first podzolic horizon and the isolated groove on the semiconductor substrate；First exhaust pipeline
204, it is connected inside the first exhaust pipeline 204 and the first chemical gaseous phase etching cavity 200, for by described first
Residual gas discharge inside chemical gaseous phase etching cavity 200；Second chemical gaseous phase etching cavity 21, second chemical gaseous phase
Etching cavity 21 includes：Second chemical gaseous phase etching cavity main body 210；Second chuck 211, second chuck 211 are located at institute
It states in the second chemical gaseous phase etching cavity 210, first podzolic horizon and second podzolic horizon is formed with for absorption surface
The semiconductor substrate 30；Heating device 212, the heating device 212 are located in second chuck 211, for table
Face is formed with first podzolic horizon and the semiconductor substrate 30 of second podzolic horizon carries out ashing heating, so that institute
It states the first podzolic horizon and second podzolic horizon is decomposed into gas by solid compounds and is removed；And second exhaust pipeline 213,
It is connected inside the second exhaust pipeline 213 and the second chemical gaseous phase etching cavity 210.
The chemical reaction gas includes hydrogen fluoride gas and ammonia, and first air inlet pipeline 202 is used for described the
Hydrogen fluoride gas is passed through inside one chemical gaseous phase etching cavity main body 200, second air inlet pipeline 203 is used for described first
It is passed through ammonia inside chemical gaseous phase etching cavity main body 210；First podzolic horizon and second podzolic horizon include fluorine silicon
Sour ammonium.
As an example, first chuck 201 and second chuck 211 all can be electrostatic chuck or vacuum cups.
As an example, the chemical gaseous phase etching apparatus can also include third air inlet pipeline 214, the third air inlet pipe
It is connected inside road 214 and the second chemical gaseous phase etching cavity 210, is used for the second chemical gaseous phase etching cavity
Purge gas is passed through in 210, first podzolic horizon and second podzolic horizon that will be evaporated are from the semiconductor substrate 30
Surface is blown off, and the second chemical gaseous phase etching cavity 210 is discharged via the second exhaust pipeline 213.
As an example, the third air inlet pipeline 214 can be but be not limited only to nitrogen pipeline, the third air inlet pipeline
214 can be passed through nitrogen into the second chemical gaseous phase etching cavity 210 purges 30 surface of the semiconductor substrate.
Certainly, in other examples, the third air inlet pipeline 214 can also be other inert gas pipings, can be to described second
Inert gas is passed through in chemical gaseous phase etching cavity 210 to purge with the surface to the semiconductor substrate 30.
As an example, 214 tunnel of third air inlet pipe via the top of the second chemical gaseous phase etching cavity 210 with it is described
It is connected inside second chemical gaseous phase etching cavity 210；Specifically, described in the gas outlet face of the third air inlet pipeline 214
The surface of semiconductor substrate 30 can make purge gas have maximum purging to 30 surface of the semiconductor substrate in this way
Power.
As an example, first air inlet pipeline 202 via the top of the first chemical gaseous phase etching cavity 200 with it is described
It is connected inside first chemical gaseous phase etching cavity 200, second air inlet pipeline 203 is etched via first chemical gaseous phase
The top of chamber 200 be connected inside the first chemical gaseous phase etching cavity 200.
As an example, the chemical gaseous phase etching apparatus can also include cooling device 205, the cooling device 205
In in first chuck 201, drop is cooled down for being carried out to the semiconductor substrate 30 on first chuck 201
Temperature；The cooling device 205 controls the temperature of first chuck 201 between 30 DEG C~35 DEG C.
As an example, the chemical gaseous phase etching apparatus can also include the 4th air inlet pipeline 206 and the 5th air inlet pipeline
207；Wherein, it is connected inside the 4th air inlet pipeline 206 and the first chemical gaseous phase etching cavity 200, is used for institute
It states in the first chemical gaseous phase etching cavity 200 and is passed through nitrogen；5th air inlet pipeline 207 is etched with first chemical gaseous phase
It is connected inside chamber 200, for being passed through inert gas into the first chemical gaseous phase etching cavity 200.Described 4th into
Air pipe 206 is used to be passed through the first change described in the forward direction of hydrogen fluoride gas into the first chemical gaseous phase etching cavity 200
It learns in gas phase etching cavity 200 and is passed through nitrogen, with to carrying out voltage stabilizing in the first chemical gaseous phase etching cavity 200；Described
Five air inlet pipelines 207 are used for when the first chemical gaseous phase etching cavity 20 works to the first chemical gaseous phase etching cavity
Inert gas is continually fed into 200 using as protective gas；The inert gas can be but be not limited only to argon gas.
As an example, the chemical gaseous phase etching apparatus can also include Mixed Zone 208, the Mixed Zone 208
In the top of the first chemical gaseous phase etching cavity 200, and with the first chemical gaseous phase etching cavity 200 internal, described the
One air inlet pipeline 202 and second air inlet pipeline 203 are connected, the fluorination for providing first air inlet pipeline 202
Hydrogen is provided to the first chemical gaseous phase etching cavity after being mixed with the ammonia that second air inlet pipeline 203 provides
In 200.Specifically, the Mixed Zone 208 can be one and the cavity being connected inside first reaction chamber 20.
Embodiment three
5 are please referred to Fig.1, the present embodiment also provides a kind of chemical gaseous phase etching apparatus 2, the chemical gas described in the present embodiment
Phase etching apparatus 2 is additionally arranged surge chamber 22 and mechanical arm 23 compared to the chemical gaseous phase etching apparatus 2 described in embodiment two；
Wherein, the surge chamber 22 is connected with the first chemical gaseous phase etching cavity 20 and the second chemical gaseous phase etching cavity 21；
The mechanical arm 23 is located in the surge chamber 22, for transmitting the semiconductor substrate 30.Specifically, the mechanical arm
23 for the pending semiconductor substrate 30 to be sent in the first chemical gaseous phase etching cavity 200, described the
In one chemical gaseous phase etching cavity 200 to the processing of the semiconductor substrate 30 after, the semiconductor substrate 30 is passed to described the
It is handled in two chemical gaseous phase etching cavities 210, and is changed the semiconductor substrate 30 by described second after being disposed
Learn outflow in gas phase etching cavity 210.
As an example, the first chemical gaseous phase etching cavity 20 described in the present embodiment and second chemical gaseous phase etching
Chamber 21 with described in embodiment one the first chemical gaseous phase etching cavity 20 and the second chemical gaseous phase etching cavity 21 it is complete
It is exactly the same, referring specifically to embodiment one, it is not repeated herein.
In conclusion removal heat oxide film and the method and apparatus for removing deposited oxide film, the side while present invention
Method includes the following steps：1) semi-conductive substrate is provided, the semiconductor substrate has isolated groove, in the semiconductor substrate
Heat oxide film is formed, forms deposited oxide film in the isolated groove, the deposited oxide film, which has, protrudes from the semiconductor
The lug boss of substrate；2) heat oxide film and institute on the semiconductor substrate is removed simultaneously with chemical gaseous phase etching mode
State the lug boss of deposited oxide film, wherein step 2) includes：Chemical gas phase reaction gas is provided in the semiconductor substrate
Body, it is anti-that the chemical gas phase reaction gas generates chemistry to the lug boss of the heat oxide film and the deposited oxide film
It answers, to be formed on the semiconductor substrate on the first podzolic horizon and the isolated groove on the semiconductor substrate
Second podzolic horizon；And the semiconductor substrate is subjected to ashing heating, so that first podzolic horizon and second ash
Change layer to be decomposed into gas by solid compounds and be removed, and retains the deposited oxide film in the isolation trench.This
Invention can be passed through chemical gas phase reaction gas to the semiconductor substrate surface for being formed with heat oxide film and deposited oxide film, chemistry
Reaction gas can generate the first podzolic horizon and the second podzolic horizon with the heat oxide film and deposited oxide film reaction, then use again
Ashing heating removes first podzolic horizon and second podzolic horizon；The present invention has heat oxide film and deposited oxide film general
In identical removal rate, and it is in isotropism to the removal of heat oxide film and deposited oxide layer, will not in heat oxide film and
The intersection of deposited oxide film forms cavity blemish, the lower section on barrier layer also only will produce it is small-sized it is small pull back it is scarce
It falls into, defect of pulling back will not even be generated in the lower section on barrier layer, so as to effectively avoid the generation of device creepage, and then really
Protect the performance of device.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology can all carry out modifications and changes to above-described embodiment without violating the spirit and scope of the present invention.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should by the present invention claim be covered.
Claims (28)
1. method that is a kind of while removing heat oxide film and remove deposited oxide film, which is characterized in that the method includes as follows
Step：
1) semi-conductive substrate is provided, the semiconductor substrate has isolated groove, thermal oxide is formed in the semiconductor substrate
Film forms deposited oxide film in the isolated groove；
2) heat oxide film and the deposition oxygen on the semiconductor substrate is removed simultaneously with chemical gaseous phase etching mode
Change film, wherein step 2) includes：Chemical gas phase reaction gas, the chemical gas phase reaction are provided in the semiconductor substrate
Gas generates chemical reaction to the heat oxide film and the deposited oxide film, described to be formed on the semiconductor substrate
The second podzolic horizon on the first podzolic horizon and the isolated groove in semiconductor substrate；And by the semiconductor substrate
Ashing heating is carried out, so that first podzolic horizon and second podzolic horizon are decomposed into gas by solid compounds and are gone
It removes, and retains the deposited oxide film in the isolation trench.
2. according to the method described in claim 1, it is characterized in that：The deposited oxide film, which has, protrudes from the heat oxide film
Lug boss.
3. according to the method described in claim 1, it is characterized in that：First podzolic horizon includes the whole of the heat oxide film
Body, second podzolic horizon include a part for the deposited oxide film.
4. according to the method described in claim 1, it is characterized in that：The chemical gas phase reaction gas packet provided in step 2)
Include hydrogen fluoride gas and ammonia.
5. according to the method described in claim 4, it is characterized in that：In step 2), the ammonia and the hydrogen fluoride gas
The ratio between gas flow is between 0.9:1~1.1:1.
6. according to the method described in claim 4, it is characterized in that：In step 2), the gas flow of the ammonia is between 20 marks
Quasi- ml/min~100 standard milliliters/minute, the gas flow of the hydrogen fluoride gas between 20 standard milliliters/minute~
100 standard milliliters/minute；The time of the chemical gas phase reaction gas is provided between 5 simultaneously to the semiconductor substrate surface
Second~60 seconds；The temperature of the semiconductor substrate is between 30 DEG C~35 DEG C.
7. according to the method described in claim 4, it is characterized in that：In step 2), the purity of the ammonia is more than 99.999%,
The purity of the hydrogen fluoride gas is not less than 99.999%.
8. according to the method described in claim 4, it is characterized in that：In step 2), the chemical reaction is implemented in the first chemistry
In gas phase etching cavity.
9. according to the method described in claim 8, it is characterized in that：It is etched to first chemical gaseous phase in the chemical reaction
While being passed through the hydrogen fluoride gas and the ammonia in chamber, also it is passed through into the first chemical gaseous phase etching cavity lazy
Property gas.
10. according to the method described in claim 9, it is characterized in that：In step 2), the purity of the inert gas is not less than
99%.
11. according to the method described in claim 9, it is characterized in that：It is passed through institute into the first chemical gaseous phase etching cavity
It further includes before following steps to state chemical gas phase reaction gas：
It is passed through nitrogen and inert gas into the first chemical gaseous phase etching cavity, by the first chemical gaseous phase etch chamber
Indoor pressure stability is in first pressure；
Under the conditions of the first pressure, the nitrogen and indifferent gas are continually fed into the first chemical gaseous phase etching cavity
While body, ammonia is passed through into the first chemical gaseous phase etching cavity；
Stop being passed through nitrogen into the first chemical gaseous phase etching cavity, by the indoor pressure of the first chemical gaseous phase etch chamber
Power is adjusted to second pressure；
Further include following steps between the chemical reaction and ashing heating,
Stop being passed through the hydrogen fluoride gas into the first chemical gaseous phase etching cavity, continue to first chemical gaseous phase
Ammonia and inert gas are passed through in etching cavity.
12. according to the method described in claim 1, it is characterized in that：First podzolic horizon and second podzolic horizon wrap
Include ammonium fluosilicate.
13. according to the method described in claim 1, it is characterized in that：The semiconductor substrate is carried out to the process of ashing heating
In, the temperature that the semiconductor substrate is heated to is between 140 DEG C~200 DEG C.
14. method according to any one of claim 1 to 13, it is characterised in that：In step 2), the semiconductor is served as a contrast
While bottom carries out ashing heating, nitrogen is provided to be carried out to the surface of the semiconductor substrate to the semiconductor substrate surface
Purging.
15. according to the method for claim 14, it is characterised in that：It includes such as that the semiconductor substrate, which is carried out ashing heating,
Lower step：
The semiconductor substrate that surface is formed with to first podzolic horizon and second podzolic horizon carries out ashing heating
Meanwhile first time purging is carried out to the semiconductor substrate surface with first gas flow using the nitrogen；
The flow of the nitrogen is adjusted to second gas flow, second of purging is carried out to the semiconductor substrate surface,
In, the second gas flow is less than the first gas flow.
16. according to the method for claim 15, it is characterised in that：The first gas flow between 1500 standard milliliters/
Minute~2500 standard milliliters/minute, the purging pressure of purging is between the millitorr of 1500 millitorrs~2500 for the first time；Second gas
Body flow is between 200 standard milliliters/minute~400 standard milliliters/minute, and the purging pressure of second of purging is between 200 millitorrs
~400 millitorrs.
17. according to the method for claim 15, it is characterised in that：Using the nitrogen with the first gas flow to institute
Time that semiconductor substrate surface is purged is stated between 90 seconds~110 seconds, using the nitrogen with the second gas flow
The time purged to the semiconductor substrate surface was between 10 seconds~30 seconds.
18. according to the method for claim 14, it is characterised in that：In step 2), the semiconductor substrate is ashed
Heating is implemented in the second chemical gaseous phase etching cavity, leads into the second chemical gaseous phase etching cavity while ashing is heated
Enter nitrogen to purge the semiconductor substrate surface.
19. according to the method for claim 18, it is characterised in that：The semiconductor substrate gone back before ashing heating
Include the steps that being passed through nitrogen into the second chemical gaseous phase etching cavity, it will be in the second chemical gaseous phase etching cavity
Pressure stability in preset pressure.
20. a kind of chemical gaseous phase etching apparatus, which is characterized in that the equipment is used to remove the heat oxide film in semiconductor substrate
With deposited oxide film, the equipment includes：
First chemical gaseous phase etching cavity, the first chemical gaseous phase etching cavity include：
First chemical gaseous phase etching cavity main body；
First chuck is located in the first chemical gaseous phase etching cavity main body, for adsorbing the semiconductor substrate；
First air inlet pipeline is connected with the first chemical gaseous phase etching cavity body interior；
Second air inlet pipeline is connected with the first chemical gaseous phase etching cavity body interior, first air inlet pipeline with
Second air inlet pipeline is used to be passed through chemical gas phase reaction gas to the first chemical gaseous phase etching cavity body interior；Institute
It states chemical gas phase reaction gas and chemical reaction is generated to the heat oxide film and the deposited oxide film, to be served as a contrast in the semiconductor
The second podzolic horizon on the first podzolic horizon and the isolated groove on the semiconductor substrate is formed on bottom；
And
First exhaust pipeline is connected with the first chemical gaseous phase etching cavity body interior, for chemical by described first
The residual gas of gas phase etching cavity body interior is discharged；
Second chemical gaseous phase etching cavity, the second chemical gaseous phase etching cavity include：Second chemical gaseous phase etching cavity master
Body；
Second chuck is located in the second chemical gaseous phase etching cavity main body, and first ash is formed with for absorption surface
Change the semiconductor substrate of layer and second podzolic horizon；
Heating device is located in second chuck, for being formed with first podzolic horizon and second ashing to surface
The semiconductor substrate of layer carries out ashing heating, so that first podzolic horizon and second podzolic horizon are by solid-state chemical combination
Object is decomposed into gas and is removed；And
Second exhaust pipeline is connected with the second chemical gaseous phase etching cavity body interior.
21. equipment according to claim 20, it is characterised in that：The chemical reaction gas includes hydrogen fluoride gas and ammonia
Gas, first air inlet pipeline is used to be passed through hydrogen fluoride gas to the first chemical gaseous phase etching cavity body interior, described
Second air inlet pipeline is used to be passed through ammonia to the first chemical gaseous phase etching cavity body interior；First podzolic horizon and institute
It includes ammonium fluosilicate to state the second podzolic horizon.
22. equipment according to claim 20, it is characterised in that：The equipment further includes third air inlet pipeline, and described
Three air inlet pipelines are connected with the second chemical gaseous phase etching cavity body interior, for being etched to second chemical gaseous phase
Purge gas is passed through in chamber body, first podzolic horizon and second podzolic horizon that will be evaporated are served as a contrast from the semiconductor
Bottom surface blows off, and the second chemical gaseous phase etching cavity main body is discharged via the second exhaust pipeline.
23. equipment according to claim 22, it is characterised in that：The third air inlet pipeline is via the described second chemical gas
Phase etching cavity body top is connected with the second chemical gaseous phase etching cavity body interior.
24. equipment according to claim 20, it is characterised in that：First air inlet pipeline is via the described first chemical gas
Phase etching cavity body top is connected with the first chemical gaseous phase etching cavity body interior, the second air inlet pipeline warp
It is connected with the first chemical gaseous phase etching cavity body interior by the first chemical gaseous phase etching cavity body top.
25. equipment according to claim 20, it is characterised in that：The equipment further includes cooling device, the cooling dress
Setting in first chuck, for being cooled down to the semiconductor substrate on first chuck.
26. equipment according to claim 20, it is characterised in that：The equipment further include the 4th air inlet pipeline and the 5th into
Air pipe；Wherein, the 4th air inlet pipeline is connected with the first chemical gaseous phase etching cavity body interior, is used for institute
It states in the first chemical gaseous phase etching cavity main body and is passed through nitrogen；5th air inlet pipeline and the first chemical gaseous phase etch chamber
Room body interior is connected, for being passed through inert gas into the first chemical gaseous phase etching cavity main body.
27. equipment according to claim 20, it is characterised in that：The equipment further includes Mixed Zone, the mixed zone
Domain is located at the first chemical gaseous phase etching cavity body top, and with the first chemical gaseous phase etching cavity body interior,
First air inlet pipeline and second air inlet pipeline are connected, and are used for first air inlet pipeline and second air inlet
The chemical gas phase reaction gas that pipeline provides is provided to after being mixed in the first chemical gaseous phase etching cavity main body.
28. the equipment according to any one of claim 20 to 27, it is characterised in that：The equipment further includes：
Surge chamber is connected with the first chemical gaseous phase etching cavity and the second chemical gaseous phase etching cavity；
Mechanical arm is located in the surge chamber, for transmitting the semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810268947.9A CN108447774B (en) | 2018-03-29 | 2018-03-29 | Method and apparatus for simultaneously removing thermal oxide film and removing deposited oxide film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810268947.9A CN108447774B (en) | 2018-03-29 | 2018-03-29 | Method and apparatus for simultaneously removing thermal oxide film and removing deposited oxide film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108447774A true CN108447774A (en) | 2018-08-24 |
| CN108447774B CN108447774B (en) | 2023-05-26 |
Family
ID=63197424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810268947.9A Active CN108447774B (en) | 2018-03-29 | 2018-03-29 | Method and apparatus for simultaneously removing thermal oxide film and removing deposited oxide film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108447774B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030143854A1 (en) * | 2002-01-28 | 2003-07-31 | Nanya Technology Corporation | Method of forming a shallow trench isolation in a semiconductor substrate |
| CN1741263A (en) * | 2004-08-27 | 2006-03-01 | 株式会社东芝 | Method of manufacturing a semiconductor device, and a semiconductor substrate |
| TW200723391A (en) * | 2005-02-23 | 2007-06-16 | Tokyo Electron Ltd | Surface treatment method for substrate, cleaning method for substrate and program |
| US20090221137A1 (en) * | 2008-02-29 | 2009-09-03 | Elpida Memory, Inc. | Semiconductor device and manufacturing method therefor |
| US20160020115A1 (en) * | 2014-07-18 | 2016-01-21 | Tokyo Electron Limited | Etching Method and Storage Medium |
| CN208368468U (en) * | 2018-03-29 | 2019-01-11 | 长鑫存储技术有限公司 | Chemical gaseous phase etching apparatus |
-
2018
- 2018-03-29 CN CN201810268947.9A patent/CN108447774B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030143854A1 (en) * | 2002-01-28 | 2003-07-31 | Nanya Technology Corporation | Method of forming a shallow trench isolation in a semiconductor substrate |
| CN1741263A (en) * | 2004-08-27 | 2006-03-01 | 株式会社东芝 | Method of manufacturing a semiconductor device, and a semiconductor substrate |
| TW200723391A (en) * | 2005-02-23 | 2007-06-16 | Tokyo Electron Ltd | Surface treatment method for substrate, cleaning method for substrate and program |
| US20090221137A1 (en) * | 2008-02-29 | 2009-09-03 | Elpida Memory, Inc. | Semiconductor device and manufacturing method therefor |
| US20160020115A1 (en) * | 2014-07-18 | 2016-01-21 | Tokyo Electron Limited | Etching Method and Storage Medium |
| CN208368468U (en) * | 2018-03-29 | 2019-01-11 | 长鑫存储技术有限公司 | Chemical gaseous phase etching apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108447774B (en) | 2023-05-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW202104632A (en) | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface | |
| US6013575A (en) | Method of selectively depositing a metal film | |
| TWI396253B (en) | Gapfill improvement with low etch rate dielectric liners | |
| US20170229314A1 (en) | Atomic layer etching 3d structures: si and sige and ge smoothness on horizontal and vertical surfaces | |
| US20180025900A1 (en) | Alkali metal and alkali earth metal reduction | |
| CN109417048A (en) | Flowable amorphous silicon film for gap filling application | |
| TWI555086B (en) | Deposit removal method | |
| JP2004508709A (en) | Oxide selective etching method | |
| JP2003077839A (en) | Purging method of semiconductor-manufacturing apparatus and manufacturing method of semiconductor device | |
| TW201729283A (en) | Self-aligned shielding of silicon oxide | |
| CN105448634B (en) | A kind of control method of cavity environment | |
| KR101321424B1 (en) | Method of surface treatment and thin film growth, and equipment for surface treatment and thin film growth | |
| US11107699B2 (en) | Semiconductor manufacturing process | |
| CN208368468U (en) | Chemical gaseous phase etching apparatus | |
| JP5888674B2 (en) | Etching apparatus, etching method and cleaning apparatus | |
| JP3961247B2 (en) | Plasma processing method, plasma processing apparatus, and semiconductor device manufacturing method | |
| CN108447774A (en) | Heat oxide film is removed simultaneously and removes the method and apparatus of deposited oxide film | |
| JP3094470B2 (en) | Dry etching method | |
| TW202035775A (en) | Method for cleaning process chamber | |
| US8541307B2 (en) | Treatment method for reducing particles in dual damascene silicon nitride process | |
| CN103413778B (en) | The forming method of isolation structure | |
| CN105839069B (en) | A kind of cleaning process for chemical vapor deposition | |
| US20130095665A1 (en) | Systems and methods for processing substrates | |
| TW202101574A (en) | Etching method and apparatus | |
| CN110246761A (en) | A method of removal backside of wafer silicon nitride film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20181009 Address after: 230601 room 630, Hai Heng mansion 6, Cui Wei Road, Hefei economic and Technological Development Zone, Anhui Applicant after: CHANGXIN MEMORY TECHNOLOGIES, Inc. Address before: 230000 room 526, Hai Heng mansion 6, Cui Wei Road, Hefei economic and Technological Development Zone, Anhui Applicant before: INNOTRON MEMORY CO.,Ltd. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |