CN115612999A - Semiconductor production equipment and control method and device thereof - Google Patents
Semiconductor production equipment and control method and device thereof Download PDFInfo
- Publication number
- CN115612999A CN115612999A CN202211280013.XA CN202211280013A CN115612999A CN 115612999 A CN115612999 A CN 115612999A CN 202211280013 A CN202211280013 A CN 202211280013A CN 115612999 A CN115612999 A CN 115612999A
- Authority
- CN
- China
- Prior art keywords
- gas
- reaction chamber
- input
- controlling
- output device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 92
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title abstract description 45
- 238000006243 chemical reaction Methods 0.000 claims abstract description 190
- 238000007599 discharging Methods 0.000 claims abstract description 5
- 238000010438 heat treatment Methods 0.000 claims description 64
- 239000010453 quartz Substances 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 238000000195 production control method Methods 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 abstract description 16
- 230000000694 effects Effects 0.000 abstract description 6
- 239000007789 gas Substances 0.000 description 175
- 230000008569 process Effects 0.000 description 22
- 235000012431 wafers Nutrition 0.000 description 22
- 239000011248 coating agent Substances 0.000 description 19
- 238000000576 coating method Methods 0.000 description 19
- 150000002500 ions Chemical class 0.000 description 18
- 238000003860 storage Methods 0.000 description 17
- 238000004590 computer program Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 14
- 230000006870 function Effects 0.000 description 8
- 230000007547 defect Effects 0.000 description 6
- 239000011343 solid material Substances 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- 238000005086 pumping Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000002309 gasification Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000001272 nitrous oxide Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
The application discloses semiconductor production equipment and a control method and device thereof, which are used for cleaning a reaction chamber at high temperature through large-flow gas, so that the effect of cleaning the surface of a device in the reaction chamber is achieved, and the yield of semiconductor products is improved. The application provides a semiconductor production device, including reaction chamber, the device still includes: the gas input device is connected with the reaction chamber, and the gas output device is connected with the reaction chamber; wherein the gas input device is used for inputting gas to the reaction chamber; the gas output device is used for discharging gas in the reaction chamber; and the semiconductor production control device is used for controlling the reaction chamber to reach a preset temperature and last for a preset time at the processing gaps of a plurality of semiconductor products, then controlling the gas input device to input gas into the reaction chamber, and controlling the gas output device to discharge the gas in the reaction chamber.
Description
Technical Field
The present disclosure relates to the field of semiconductor technologies, and in particular, to a semiconductor manufacturing apparatus and a control method and device thereof.
Background
Ion implantation refers to a phenomenon in which when an ion beam is emitted toward a solid material in a vacuum, the ion beam ejects atoms or molecules of the solid material from the surface of the solid material, and after the ion beam is emitted toward the solid material, the ion beam is resisted by the solid material to be slowly reduced in speed and finally stays in the solid material, which is called ion implantation.
The ion implantation method is that impurity ions are accelerated (for Si, the voltage is more than or equal to 105V) in vacuum at low temperature, and the impurity ions with great kinetic energy can directly enter a semiconductor; some lattice defects are also generated in the semiconductor, and thus annealing or laser annealing at a low temperature is required to remove the defects after ion implantation. That is, a rapid thermal processing apparatus is often used in the wafer manufacturing process to anneal (anneal) the ions doped in the previous process (also referred to as the previous process) to activate the doped ions and repair the lattice damage caused by the ion implantation.
Depending on the type and depth of the dopant ions, different return times and temperatures (alternative time and temperature) may be used for rapid thermal processing. At present, a wafer (wafer) carried on a hollow ring (edge ring) is subjected to heat treatment by adopting a bulb heating mode, and the actual temperature of the wafer is mainly reflected by a reflecting plate (reflecting plate) protected by a quartz cover (quartz cover) below the wafer. The precursor dopant ions are more likely to diffuse out of the wafer interior in a gaseous (gas) form at high temperatures, coating (coating) the surfaces of the devices inside the chamber, especially the edge ring and/or quartz cover, resulting in uneven wafer heating. Empirically, these wafers with non-uniform heating are more likely to result in electrical tests (WAT) or poor yield (yield work).
Disclosure of Invention
The embodiment of the application provides semiconductor production equipment and a control method and device thereof, which are used for cleaning a reaction chamber at high temperature through large-flow gas, so that the effect of cleaning the surface of a device in the reaction chamber is achieved, and the yield of semiconductor products is improved.
The semiconductor production equipment provided by the embodiment of the application comprises a reaction chamber, and further comprises: the gas input device is connected with the reaction chamber, and the gas output device is connected with the reaction chamber; wherein the gas input device is used for inputting gas to the reaction chamber; the gas output device is used for discharging gas in the reaction chamber;
the apparatus further comprises:
the semiconductor production control device is used for controlling the gas input device to input gas into the reaction chamber and controlling the gas output device to discharge the gas in the reaction chamber in the processing gaps of a plurality of semiconductor products;
wherein a heating device is arranged in the reaction chamber;
the semiconductor production control device controls the heating device to start heating before controlling the gas input device to input gas into the reaction chamber and controlling the gas output device to discharge the gas in the reaction chamber;
when the reaction chamber reaches a preset temperature and lasts for a preset duration, the semiconductor production control device controls the gas input device to input gas into the reaction chamber and controls the gas output device to discharge the gas in the reaction chamber.
The semiconductor production equipment provided by the embodiment of the application can realize the cleaning of the flowing gas at the high temperature at the processing gaps of a plurality of semiconductor products by the gas input device connected with the reaction chamber and the gas output device connected with the reaction chamber and the control of the semiconductor production control device, thereby achieving the effect of cleaning the surface of the device in the reaction chamber, further avoiding or reducing the problems of uneven heating and the like of the semiconductor products under the condition of exhaust coating and improving the yield of the semiconductor products.
In some embodiments, the semiconductor production control device controls the heating device to start heating when the reaction chamber is in an idle state, and controls the gas input device to input gas into the reaction chamber and controls the gas output device to exhaust gas in the reaction chamber when the reaction chamber reaches a preset temperature and lasts for a preset time length.
In some embodiments, the semiconductor production control device controls the gas input device to input gas into the reaction chamber according to a preset gas flow rate.
In some embodiments, the gas input device comprises: the gas inlet pipeline is connected with the reaction chamber;
the gas output device includes: the air outlet pipeline is connected with the reaction chamber, and the air suction pump is connected with the air outlet pipeline.
In some embodiments, the reaction chamber comprises a heating device, a hollow ring for carrying a semiconductor product, a quartz cover and a reflecting plate protected by the quartz cover;
the gas inlet pipeline is arranged on the same side of the heating device, the circular ring, the quartz cover and the reflecting plate, and the gas outlet pipeline is arranged on the other side opposite to the heating device, the circular ring, the quartz cover and the reflecting plate.
In some embodiments, the cross-section of the gas inlet duct is honeycomb-shaped; a honeycomb air hole structure connected with the gas inlet pipeline is arranged in the reaction chamber;
and/or the cross section of the air outlet pipeline is in a honeycomb shape; and a honeycomb pore structure connected with the air outlet pipeline is arranged in the reaction chamber.
In some embodiments, the suction pump is a suction pump having a power greater than a preset value.
In some embodiments, the gas comprises a gas having an oxidizing effect.
The production control method of the semiconductor production equipment provided by the embodiment of the application comprises the following steps:
controlling the gas input device in the semiconductor production equipment to input gas into the reaction chamber and controlling the gas output device in the semiconductor production equipment to exhaust the gas in the reaction chamber at the processing gaps of a plurality of semiconductor products;
before controlling the gas input device to input gas into the reaction chamber and controlling the gas output device to discharge the gas in the reaction chamber, controlling the heating device to start heating; and when the reaction chamber reaches a preset temperature and lasts for a preset duration, controlling the gas input device to input gas into the reaction chamber and controlling the gas output device to discharge the gas in the reaction chamber.
In some embodiments, when the reaction chamber is determined to be in an idle state, the heating device is controlled to start heating, and when the reaction chamber reaches a preset temperature and lasts for a preset time length, the gas input device is controlled to input gas into the reaction chamber, and the gas output device is controlled to exhaust the gas in the reaction chamber.
In some embodiments, the gas input device is controlled to input gas into the reaction chamber according to a preset gas flow rate.
The embodiment of the application provides a semiconductor production control device, includes:
a memory for storing program instructions;
a processor for calling the program instructions stored in the memory, executing according to the obtained program:
and controlling the gas input device in the semiconductor production equipment to input gas into the reaction chamber and controlling the gas output device in the semiconductor production equipment to exhaust the gas in the reaction chamber in the processing gaps of a plurality of semiconductor products.
In some embodiments, the processor is specifically configured to:
before controlling the gas input device to input gas into the reaction chamber and controlling the gas output device to discharge the gas in the reaction chamber, controlling a heating device in the reaction chamber to start heating;
and when the reaction chamber reaches a preset temperature and lasts for a preset duration, controlling the gas input device to input gas into the reaction chamber and controlling the gas output device to discharge the gas in the reaction chamber.
In some embodiments, the processor controls the heating device to start heating when the reaction chamber is in an idle state, and controls the gas input device to input gas into the reaction chamber and controls the gas output device to exhaust gas in the reaction chamber when the reaction chamber reaches a preset temperature and lasts for a preset time length.
In some embodiments, the processor controls the gas input device to input gas into the reaction chamber according to a preset gas flow rate.
Furthermore, according to an embodiment, for example, a computer program product for a computer is provided, which comprises software code portions for performing the steps of the method as defined above, when said product is run on a computer. The computer program product may include a computer-readable medium having software code portions stored thereon. Further, the computer program product may be directly loaded into an internal memory of the computer and/or transmitted via a network through at least one of an upload process, a download process, and a push process.
Another embodiment of the present application provides a computer-readable storage medium having stored thereon computer-executable instructions for causing a computer to perform any one of the methods described above.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic diagram of an overall architecture of a semiconductor manufacturing apparatus according to an embodiment of the present disclosure;
fig. 2 is a schematic diagram of an overall architecture of another semiconductor manufacturing apparatus according to an embodiment of the present disclosure;
fig. 3 is a schematic structural diagram of a semiconductor manufacturing apparatus according to an embodiment of the present disclosure;
FIG. 4 is a schematic flow chart of chamber cleaning according to an embodiment of the present application;
FIG. 5 is a schematic view of a coating formed on the interior of a chamber prior to chamber cleaning as provided by an embodiment of the present application;
FIG. 6 is a schematic diagram of a chamber cleaning process according to an embodiment of the present application;
fig. 7 is a schematic structural diagram of a semiconductor production control apparatus according to an embodiment of the present disclosure;
fig. 8 is a schematic general flowchart of a semiconductor manufacturing control method according to an embodiment of the present disclosure;
fig. 9 is a schematic flowchart illustrating a semiconductor manufacturing control method according to an embodiment of the present disclosure;
fig. 10 is a schematic structural diagram of another semiconductor production control apparatus according to an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The embodiment of the application provides semiconductor production equipment and a control method and device thereof, which are used for cleaning a reaction chamber at high temperature through large-flow gas, so that the effect of cleaning the surface of a device in the reaction chamber is achieved, the yield of semiconductor products is improved, and the problem that the semiconductor products are heated unevenly under the condition of exhaust coating (exhaust coating) can be avoided or alleviated.
The method and the device are based on the same application concept, and because the principles of solving the problems of the method and the device are similar, the implementation of the device and the method can be mutually referred, and repeated parts are not described again.
The terms "first," "second," and the like in the description and in the claims of the embodiments of the application and in the drawings described above, if any, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It will be appreciated that the data so used may be interchanged under appropriate circumstances such that the embodiments described herein may be implemented in other sequences than those illustrated or described herein. Moreover, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
The following examples and embodiments are to be understood as merely illustrative examples. Although this specification may refer to "an", "one", or "some" example or embodiment(s) in several places, this does not imply that each such reference relates to the same example or embodiment, nor that the feature only applies to a single example or embodiment. Individual features of different embodiments may also be combined to provide other embodiments. Furthermore, terms such as "comprising" and "comprises" should be understood as not limiting the described embodiments to consist of only those features that have been mentioned; such examples and embodiments may also include features, structures, elements, modules, etc. not specifically mentioned.
Various embodiments of the present application will be described in detail below with reference to the accompanying drawings. It should be noted that the display sequence in the embodiments of the present application only represents the sequence of the embodiments, and does not represent the advantages and disadvantages of the technical solutions provided by the embodiments.
Referring to fig. 1, a semiconductor production apparatus provided in an embodiment of the present application includes a reaction chamber, and the apparatus further includes: the gas input device is connected with the reaction chamber, and the gas output device is connected with the reaction chamber; wherein the gas input device is used for inputting gas to the reaction chamber; the gas output device is used for discharging gas in the reaction chamber.
The specific structure of the gas input device in the embodiment of the present application may be determined according to actual needs, for example, the specific structure may include a gas supply device and a corresponding pipeline, and the specific structure in the embodiment of the present application is not limited.
Similarly, the specific structure of the gas input device in the embodiment of the present application may also be determined according to actual needs, for example, the gas input device may include a gas extraction device (a vacuum pumping device) and a corresponding pipeline, and the specific embodiment of the present application is not limited in this application.
Similarly, the internal structure of the reaction chamber according to the embodiment of the present invention may also be determined according to actual needs, and the reaction chamber may be a chamber for implementing any function, for example, for a reaction chamber for performing annealing (anneal), the internal structure may include a heating device, a hollow ring for carrying a semiconductor product, a quartz cover, and a reflection plate protected by the quartz cover. For the reaction chamber for deposition, the interior thereof may include other structures, which are not limited in the embodiments of the present application. That is to say, the technical solution provided in the embodiments of the present application can be applied to all the machines with the requirement of cleaning the surfaces of the devices inside the reaction chamber.
The semiconductor production equipment provided by the embodiment of the application can realize that the reaction chamber is cleaned by utilizing the flow of gas (the specific flow, gas, temperature, time and the like can be controlled according to actual needs) through the gas input device connected with the reaction chamber and the gas output device connected with the reaction chamber, thereby achieving the effect of cleaning the surface of a device in the reaction chamber, further avoiding or reducing the problem that a semiconductor product under the condition of exhaust coating is heated unevenly, and improving the yield of the semiconductor product.
In some embodiments, referring to fig. 2, the apparatus further comprises:
and a semiconductor production control device for controlling the gas input device to input gas into the reaction chamber and the gas output device to exhaust gas from the reaction chamber in a processing gap of a plurality of semiconductor products, for example, a processing gap of two wafers (of course, cleaning may be performed every other wafer).
In some embodiments, a heating device (for example, a device capable of adopting a bulb heating mode) is arranged in the reaction chamber;
the semiconductor production control device controls the heating device to start heating before controlling the gas input device to input gas into the reaction chamber and controlling the gas output device to discharge the gas in the reaction chamber, namely, the reaction chamber is preheated to reach a certain temperature, so that ions on the surface of a device in the reaction chamber are gasified, and the ions on the surface of the device in the reaction chamber are generated in the previous process flow and are attached to the surface of the device in the reaction chamber;
when the reaction chamber reaches a predetermined temperature (for example, more than one thousand degrees, specifically, for example, 1100 ℃) for a predetermined period of time (for example, more than half minute, specifically, for example, 2 to 3 minutes, or, for example, 1 minute, or the like), the semiconductor production control apparatus controls the gas input apparatus to input the gas into the reaction chamber, and controls the gas output apparatus to discharge the gas from the reaction chamber.
In some embodiments, the semiconductor production control device controls the heating device to start heating when the reaction chamber is in an idle state, and controls the gas input device to input gas into the reaction chamber and controls the gas output device to exhaust gas in the reaction chamber when the reaction chamber reaches a preset temperature and lasts for a preset time length.
The reaction chamber is in an idle state, i.e., when no semiconductor product processing is performed, for example, when the previous process for the previous wafer is finished and the previous process for the next wafer is not started yet.
In some embodiments, the semiconductor manufacturing control device controls the gas input device to input gas into the reaction chamber according to a preset gas flow rate (e.g., 5 to 20 seconds per milliliter).
In some embodiments, the gas input device comprises: a gas inlet pipe connected with the reaction chamber;
the gas output device includes: the air outlet pipeline is connected with the reaction chamber, and the air suction pump is connected with the air outlet pipeline.
The specific position of the air pump can be determined according to actual needs, for example, the air pump is arranged at one end of the air outlet pipeline, which is far away from the chamber.
In some embodiments, referring to fig. 3, the reaction chamber includes a heating device, a hollow ring for carrying a semiconductor product, a quartz cover, and a reflective plate protected by the quartz cover;
the gas inlet pipeline is arranged on the same side of the heating device, the circular ring, the quartz cover and the reflecting plate, and the gas outlet pipeline is arranged on the other side, opposite to the reflecting plate, of the heating device, the circular ring, the quartz cover and the reflecting plate.
In some embodiments, the cross-section of the inlet duct is honeycomb-shaped (thereby ensuring uniformity of the gas flow); a honeycomb air hole structure connected with the gas inlet pipeline is arranged in the reaction chamber;
and/or the cross section of the air outlet pipeline is in a honeycomb shape; and a honeycomb air hole structure connected with the air outlet pipeline is arranged in the reaction chamber.
In some embodiments, the suction pump is a suction pump having a power greater than a preset value. For example, the power range of the suction pump is: 0.5-2 KW.
In some embodiments, the gas comprises a gas having an oxidizing effect, such as N 2 O。
In some embodiments, N 2 The pipelines of O (including the gas inlet pipeline and/or the gas outlet pipeline) are independently controlled, i.e. the semiconductor production control device independently controls N 2 Pipeline of OThe reaction chamber is ventilated, and the effects of cleaning, oxidation and the like are achieved, namely N 2 The conduit for O is provided separately from the existing gas conduits within the reaction chamber.
The following description is given by taking the example of using high temperature action to gasify and degas (output), using large flow rate oxidizing gas cleaning (purge) and providing high power pump (pump) to pump and clean the device surface inside the annealing (annealing) reaction chamber, avoiding or reducing defects (defects) and poor yield (yield work) caused by wafer uneven heating in the case of exhaust coating (output coating).
Based on the internal structure of the current chamber and the unavoidable nature of degassing (output), in the embodiment of the present application, it is proposed to provide a pump (pump) inside or outside the chamber, see fig. 4, when the chamber is determined to be idle (while chamber idle), first preheat the chamber to over one thousand degrees celsius (for example, 1100 ℃) for a preset time period (for example, over half a minute, for example, 2 to 3 minutes, or for example, 1 min), distribute the output gasification of the chamber in the past, and simultaneously perform pumping with a preset flow rate (for example, 5 to 20 seconds per milliliter) of gas (for example, various gases such as nitrous oxide (N2O), nitrogen, helium, etc.), open the strong pumping pump to evacuate the gas, and discharge the gas out of the chamber, thereby avoiding the degassing/yield caused by the uneven heating of the wafer due to the coating, and further improving the process capacity (cap a).
In the embodiment of the present application, during wafer processing (wafer process), referring to fig. 5, ions injected in the previous process may escape, and as the chamber cools, these outmissing may slowly cool on each device inside the chamber, including edge ring and quartz cover, and the next wafer enters the chamber and is carried on the edge ring, because of the existence of the covering, the wafer is not uniformly heated, and in addition, because of the existence of the covering on the quartz cover, the refolect temperature reading is not accurate, and an erroneous judgment and instruction may be made on power tuning (power tune).
Therefore, it is important to alleviate the outmissing coating, see FIG. 6, when the chamber temperature is raised to 1100 ℃ before the next wafer enters the chamber, the coating is performed at high temperatureCan be gasified and distributed in the whole space, and N with large flow rate is controlled and input at the moment 2 And (3) pumping is carried out by O flow (flow), and meanwhile, a large-flow pump is opened to pump, so that not only can full gasification of cooling be ensured, but also the outgassing after gasification can be completely removed, and the influence of defect/yield loss and the like caused by uneven heating of the wafer is reduced.
By comparing fig. 5 and fig. 6, in the foregoing process, coating ions such as phosphorus (P) ions and boron (B) ions (or simply coating) are coated on the quartz cover and the Edge ring, and according to the technical solution provided by the embodiment of the present application, N can be introduced into the coating 2 O removes these coating ions, i.e. reacts with them by gas passing into the chamber, e.g. 4P +5O 2 Conversion to 2P 2 O 5 ，4B+3O 2 Conversion to 2B 2 O 3 Thereby 2P will be formed 2 O 5 And 2B 2 O 3 And discharging the chamber to clean the phosphorus (P) ions and boron (B) ions coated on the surface of the internal device of the chamber. The coating ions such as phosphorus (P) ions and boron (B) ions are from the source and drain in the wafer production process, and the detailed description of the processing process of the source and drain is omitted.
In summary, the embodiment of the present application proposes that heating the chamber vaporizes the coating when the chamber is idle, and N is used to vaporize the coating 2 O gas performs purge to the interior of chamber, and uses strong power to extract outtransmission and N 2 And O, thereby solving the problem of defect word or yield loss caused by uneven wafer heating.
The following describes an apparatus provided in an embodiment of the present application, where technical features the same as or corresponding to those described in the above-mentioned devices are explained or illustrated, and are not further described later.
Referring to fig. 7, an embodiment of the present application provides a semiconductor production control apparatus, including:
the processor 600 is used for reading the program in the memory 620 and executing the following processes:
and controlling the gas input device in the semiconductor production equipment to input gas into the reaction chamber and controlling the gas output device in the semiconductor production equipment to exhaust the gas in the reaction chamber in the processing gaps of a plurality of semiconductor products.
In some embodiments, the processor 600 is specifically configured to:
before controlling the gas input device to input gas into the reaction chamber and controlling the gas output device to discharge the gas in the reaction chamber, controlling a heating device in the reaction chamber to start heating;
and when the reaction chamber reaches a preset temperature and lasts for a preset time length, controlling the gas input device to input gas into the reaction chamber and controlling the gas output device to discharge the gas in the reaction chamber.
In some embodiments, the processor 600 controls the heating device to start heating when the reaction chamber is in an idle state, and controls the gas input device to input gas into the reaction chamber and controls the gas output device to exhaust gas from the reaction chamber when the reaction chamber reaches a preset temperature and lasts for a preset time length.
In some embodiments, the processor 600 controls the gas input device to input gas into the reaction chamber according to a preset gas flow rate.
In some embodiments, the semiconductor production control further comprises a transceiver 610 for receiving and transmitting data under the control of the processor 600.
Where in fig. 7 the bus architecture may include any number of interconnected buses and bridges, with various circuits being linked together, particularly one or more processors represented by processor 600 and memory represented by memory 620. The bus architecture may also link together various other circuits such as peripherals, voltage regulators, power management circuits, and the like, which are well known in the art, and therefore, will not be described any further herein. The bus interface provides an interface. The transceiver 610 may be a number of elements including a transmitter and a receiver that provide a means for communicating with various other apparatus over a transmission medium.
In some embodiments, the semiconductor manufacturing control system further comprises a user interface 630, wherein the user interface 630 may be an interface capable of interfacing with a desired device, such as but not limited to a keypad, a display, a speaker, a microphone, a joystick, etc.
The processor 600 is responsible for managing the bus architecture and general processing, and the memory 620 may store data used by the processor 600 in performing operations.
In some embodiments, the processor 600 may be a CPU (central processing unit), an ASIC (Application Specific Integrated Circuit), an FPGA (Field Programmable Gate Array), or a CPLD (Complex Programmable Logic Device).
Accordingly, referring to fig. 8, a semiconductor production control method provided in an embodiment of the present application includes:
s101, controlling a heating device in a reaction chamber to start heating in the processing gaps of a plurality of semiconductor products;
s102, when the reaction chamber reaches a preset temperature and lasts for a preset time, controlling the gas input device in the semiconductor production equipment to input gas into the reaction chamber; and controlling the gas output device in the semiconductor production equipment to discharge the gas in the reaction chamber.
Wherein the step of controlling the gas input device in the semiconductor manufacturing apparatus to input the gas into the reaction chamber and the step of controlling the gas output device in the semiconductor manufacturing apparatus to discharge the gas in the reaction chamber may be performed simultaneously or separately.
In some embodiments, the heating device is controlled to start heating when the reaction chamber is in an idle state, and the gas input device is controlled to input gas into the reaction chamber and the gas output device is controlled to exhaust gas in the reaction chamber when the reaction chamber reaches a preset temperature and lasts for a preset time length.
In some embodiments, the gas input device is controlled to input gas into the reaction chamber according to a preset gas flow rate.
Then, a specific semiconductor manufacturing control flow provided by the embodiment of the present application is shown in fig. 9, and includes:
s201, controlling a heating device in the reaction chamber to start heating when the reaction chamber is in an idle state;
s202, when the reaction chamber reaches a preset temperature (for example 1100 ℃) for a preset time (for example 1 minute), controlling a preset gas (for example N) according to a preset gas flow rate 2 O) an input device inputs gas to the reaction chamber;
and S203, controlling a gas output device to discharge the gas in the reaction chamber.
Accordingly, referring to fig. 10, an embodiment of the present application provides a specific semiconductor production control apparatus, including:
the first unit 11 is used for controlling a heating device in the reaction chamber to start heating when the reaction chamber is in an idle state;
a second unit 12 for controlling a preset gas (e.g., N) at a preset gas flow rate when the reaction chamber reaches a preset temperature (e.g., 1100 ℃) for a preset time (e.g., 1 minute) 2 O) an input device inputs gas to the reaction chamber;
and a third unit 13 for controlling the gas output device to discharge the gas in the reaction chamber.
It should be noted that the division of the unit in the embodiment of the present application is schematic, and is only a logic function division, and there may be another division manner in actual implementation. In addition, functional units in the embodiments of the present application may be integrated into one processing unit, or each unit may exist alone physically, or two or more units are integrated into one unit. The integrated unit may be implemented in the form of hardware, or may also be implemented in the form of a software functional unit.
The integrated unit, if implemented in the form of a software functional unit and sold or used as a stand-alone product, may be stored in a computer readable storage medium. Based on such understanding, the technical solutions of the present application, which are essential or contributing to the prior art, or all or part of the technical solutions may be embodied in the form of a software product, which is stored in a storage medium and includes several instructions for causing a computer device (which may be a personal computer, a server, a network device, or the like) or a processor (processor) to execute all or part of the steps of the methods described in the embodiments of the present application. And the aforementioned storage medium includes: various media capable of storing program codes, such as a usb disk, a removable hard disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a magnetic disk, or an optical disk.
The embodiment of the present application provides a computing device, which may specifically be a desktop computer, a portable computer, a smart phone, a tablet computer, a Personal Digital Assistant (PDA), and the like. The computing device may include a Central Processing Unit (CPU), memory, input/output devices, etc., the input devices may include a keyboard, mouse, touch screen, etc., and the output devices may include a Display device, such as a Liquid Crystal Display (LCD), a Cathode Ray Tube (CRT), etc.
The memory may include Read Only Memory (ROM) and Random Access Memory (RAM), and provides the processor with program instructions and data stored in the memory. In the embodiments of the present application, the memory may be used for storing a program of any one of the methods provided by the embodiments of the present application.
The processor is used for executing any method provided by the embodiment of the application according to the obtained program instructions by calling the program instructions stored in the memory.
Embodiments of the present application also provide a computer program product or computer program comprising computer instructions stored in a computer-readable storage medium. The processor of the computer device reads the computer instructions from the computer-readable storage medium, and the processor executes the computer instructions to cause the computer device to perform the method of any of the above embodiments. The program product may employ any combination of one or more readable media. The readable medium may be a readable signal medium or a readable storage medium. A readable storage medium may be, for example, but not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any combination of the foregoing. More specific examples (a non-exhaustive list) of the readable storage medium include: an electrical connection having one or more wires, a portable diskette, a hard disk, a Random Access Memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.
Embodiments of the present application provide a computer-readable storage medium for storing computer program instructions for an apparatus provided in the embodiments of the present application, which includes a program for executing any one of the methods provided in the embodiments of the present application. The computer-readable storage medium may be a non-transitory computer-readable medium.
The computer-readable storage medium can be any available media or data storage device that can be accessed by a computer, including but not limited to magnetic memory (e.g., floppy disks, hard disks, magnetic tape, magneto-optical disks (MOs), etc.), optical memory (e.g., CDs, DVDs, BDs, HVDs, etc.), and semiconductor memory (e.g., ROMs, EPROMs, EEPROMs, non-volatile memory (NAND FLASH), solid State Disks (SSDs)), etc.
It should be understood that:
embodiments suitable for implementation as software code or as part thereof and for operation using a processor or processing functionality are software code independent and may be specified using any known or future developed programming language, such as a high level programming language, such as objective-C, C + +, C #, java, python, javascript, other scripting language, etc., or a low level programming language, such as a machine language or an assembler.
The implementation of the embodiments is hardware independent and may be implemented using any known or future developed hardware technology or any mixture thereof, such as a microprocessor or CPU (central processing unit), MOS (metal oxide semiconductor), CMOS (complementary MOS), biMOS (bipolar MOS), biCMOS (bipolar CMOS), ECL (emitter coupled logic) and/or TTL (transistor-transistor logic).
Embodiments may be implemented as separate devices, apparatus, units, components or functions, or in a distributed fashion where, for example, one or more processors or processing functions may be used or shared in a process, or one or more processing segments or processing portions may be used and shared in a process, where one physical processor or more than one physical processor may be used to implement one or more processing portions dedicated to a particular process as described.
The apparatus may be implemented by a semiconductor chip, a chipset, or a (hardware) module comprising such a chip or chipset.
Embodiments may also be implemented as any combination of hardware and software, such as an ASIC (application specific IC (integrated circuit)) component, FPGA (field programmable gate array) or CPLD (complex programmable logic device) component, or DSP (digital signal processor) component.
Embodiments may also be implemented as a computer program product, comprising a computer usable medium having a computer readable program code embodied therein, the computer readable program code adapted to perform a process as described in the embodiments, wherein the computer usable medium may be a non-transitory medium.
As will be appreciated by one skilled in the art, embodiments of the present application may be provided as a method, system, or computer program product. Accordingly, the present application may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present application may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, optical storage, and the like) having computer-usable program code embodied therein.
The present application is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the application. It will be understood that each flow and/or block of the flow diagrams and/or block diagrams, and combinations of flows and/or blocks in the flow diagrams and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present application without departing from the spirit and scope of the application. Thus, if such modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is intended to include such modifications and variations as well.
Claims (15)
1. A semiconductor manufacturing apparatus comprising a reaction chamber, characterized in that the apparatus further comprises: the gas input device is connected with the reaction chamber, and the gas output device is connected with the reaction chamber; wherein the gas input device is used for inputting gas to the reaction chamber; the gas output device is used for discharging gas in the reaction chamber;
the apparatus further comprises:
the semiconductor production control device is used for controlling the gas input device to input gas into the reaction chamber and controlling the gas output device to discharge the gas in the reaction chamber in the processing gaps of a plurality of semiconductor products;
wherein a heating device is arranged in the reaction chamber;
the semiconductor production control device controls the heating device to start heating before controlling the gas input device to input gas into the reaction chamber and controlling the gas output device to exhaust the gas in the reaction chamber;
when the reaction chamber reaches a preset temperature and lasts for a preset time length, the semiconductor production control device controls the gas input device to input gas into the reaction chamber and controls the gas output device to discharge the gas in the reaction chamber.
2. The apparatus of claim 1, wherein the semiconductor production control device controls the heating device to start heating when the reaction chamber is in an idle state, and controls the gas input device to input gas into the reaction chamber and controls the gas output device to exhaust gas from the reaction chamber when the reaction chamber reaches a preset temperature for a preset time.
3. The apparatus of claim 1, wherein the semiconductor production control device controls the gas input device to input the gas into the reaction chamber according to a preset gas flow rate.
4. The apparatus of claim 1, wherein the gas input device comprises: the gas inlet pipeline is connected with the reaction chamber;
the gas output device includes: the reaction chamber is provided with an air outlet pipeline connected with the reaction chamber and an air pump connected with the air outlet pipeline.
5. The apparatus of claim 4, wherein the reaction chamber comprises a heating device, a hollow ring for carrying a semiconductor product, a quartz cover, and a reflective plate protected by the quartz cover;
the gas inlet pipeline is arranged on the same side of the heating device, the circular ring, the quartz cover and the reflecting plate, and the gas outlet pipeline is arranged on the other side opposite to the heating device, the circular ring, the quartz cover and the reflecting plate.
6. The apparatus of claim 4, wherein the gas inlet duct is honeycomb-shaped in cross-section; a honeycomb air hole structure connected with the gas inlet pipeline is arranged in the reaction chamber;
and/or the cross section of the air outlet pipeline is in a honeycomb shape; and a honeycomb air hole structure connected with the air outlet pipeline is arranged in the reaction chamber.
7. The apparatus according to claim 4, characterized in that said suction pump is a suction pump with a power greater than a preset value.
8. The apparatus of claim 1, wherein the gas comprises a gas having an oxidizing effect.
9. A production control method of the semiconductor production apparatus according to any one of claims 1 to 8, characterized by comprising:
controlling the gas input device in the semiconductor production equipment to input gas into the reaction chamber and controlling the gas output device in the semiconductor production equipment to exhaust the gas in the reaction chamber in the processing gaps of a plurality of semiconductor products;
before controlling the gas input device to input gas into the reaction chamber and controlling the gas output device to exhaust the gas in the reaction chamber, controlling the heating device to start heating; and when the reaction chamber reaches a preset temperature and lasts for a preset time length, controlling the gas input device to input gas into the reaction chamber and controlling the gas output device to discharge the gas in the reaction chamber.
10. The production control method according to claim 9, wherein the heating device is controlled to start heating when it is determined that the reaction chamber is in an idle state, and the gas input device is controlled to input gas into the reaction chamber and the gas output device is controlled to exhaust gas from the reaction chamber when the reaction chamber reaches a preset temperature for a preset time.
11. The production control method according to claim 9, wherein the gas input means is controlled to input the gas into the reaction chamber at a preset gas flow rate.
12. A semiconductor production control apparatus, characterized in that the apparatus comprises:
a memory for storing program instructions;
a processor for calling the program instructions stored in the memory and executing according to the obtained program:
controlling the gas input device in the semiconductor production equipment of claim 1 to input gas into the reaction chamber and controlling the gas output device in the semiconductor production equipment of any one of claims 1 to 8 to exhaust gas from the reaction chamber at a processing gap of a plurality of semiconductor products.
13. The control device of claim 12, wherein the processor is specifically configured to:
before controlling the gas input device to input gas into the reaction chamber and controlling the gas output device to discharge the gas in the reaction chamber, controlling a heating device in the reaction chamber to start heating;
and when the reaction chamber reaches a preset temperature and lasts for a preset time length, controlling the gas input device to input gas into the reaction chamber and controlling the gas output device to discharge the gas in the reaction chamber.
14. The control device of claim 13, wherein the processor controls the heating device to start heating when the reaction chamber is in an idle state, and controls the gas input device to input gas into the reaction chamber and controls the gas output device to exhaust gas in the reaction chamber when the reaction chamber reaches a preset temperature and lasts for a preset time.
15. The control device of claim 12, wherein the processor controls the gas input device to input gas into the reaction chamber according to a preset gas flow rate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211280013.XA CN115612999A (en) | 2022-10-19 | 2022-10-19 | Semiconductor production equipment and control method and device thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211280013.XA CN115612999A (en) | 2022-10-19 | 2022-10-19 | Semiconductor production equipment and control method and device thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115612999A true CN115612999A (en) | 2023-01-17 |
Family
ID=84864967
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211280013.XA Pending CN115612999A (en) | 2022-10-19 | 2022-10-19 | Semiconductor production equipment and control method and device thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115612999A (en) |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001089860A (en) * | 1999-06-11 | 2001-04-03 | Tokyo Electron Ltd | Device and method for dry-cleaning of treating chamber |
| KR20050068492A (en) * | 2003-12-30 | 2005-07-05 | 동부아남반도체 주식회사 | Processing method of semiconductor process chamber through inert gas |
| KR100699681B1 (en) * | 2005-12-28 | 2007-03-23 | 동부일렉트로닉스 주식회사 | Apparatus for manufacturing semiconductor |
| KR100772256B1 (en) * | 2006-09-07 | 2007-11-01 | 동부일렉트로닉스 주식회사 | A cleaning method for chamber of rapid thermal process |
| KR20090001030A (en) * | 2007-06-29 | 2009-01-08 | 삼성전자주식회사 | Equipment for manufacturing semiconductor device |
| JP2011151118A (en) * | 2010-01-20 | 2011-08-04 | Nuflare Technology Inc | Apparatus and method for manufacturing semiconductor |
| US20110312187A1 (en) * | 2010-06-22 | 2011-12-22 | Kunihiko Suzuki | Manufacturing apparatus and method for semiconductor device and cleaning method of manufacturing apparatus for semiconductor |
| CN107574422A (en) * | 2017-09-06 | 2018-01-12 | 睿力集成电路有限公司 | Semiconductor production equipment and its cleaning method |
| CN109473330A (en) * | 2017-09-07 | 2019-03-15 | 长鑫存储技术有限公司 | Semiconductor equipment cleaning method and semiconductor process method thereof |
| CN111199897A (en) * | 2018-11-19 | 2020-05-26 | 长鑫存储技术有限公司 | Semiconductor device and semiconductor processing method |
| CN111211065A (en) * | 2018-11-22 | 2020-05-29 | 长鑫存储技术有限公司 | Cleaning method of semiconductor production equipment and semiconductor process method |
| CN111370284A (en) * | 2020-03-13 | 2020-07-03 | 北京北方华创微电子装备有限公司 | Cleaning method for semiconductor heat treatment equipment |
| CN112885745A (en) * | 2021-01-19 | 2021-06-01 | 长鑫存储技术有限公司 | Processing equipment and processing method |
| CN115020303A (en) * | 2022-08-09 | 2022-09-06 | 北京屹唐半导体科技股份有限公司 | Heat treatment device for wafer |
-
2022
- 2022-10-19 CN CN202211280013.XA patent/CN115612999A/en active Pending
Patent Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001089860A (en) * | 1999-06-11 | 2001-04-03 | Tokyo Electron Ltd | Device and method for dry-cleaning of treating chamber |
| KR20050068492A (en) * | 2003-12-30 | 2005-07-05 | 동부아남반도체 주식회사 | Processing method of semiconductor process chamber through inert gas |
| KR100699681B1 (en) * | 2005-12-28 | 2007-03-23 | 동부일렉트로닉스 주식회사 | Apparatus for manufacturing semiconductor |
| KR100772256B1 (en) * | 2006-09-07 | 2007-11-01 | 동부일렉트로닉스 주식회사 | A cleaning method for chamber of rapid thermal process |
| KR20090001030A (en) * | 2007-06-29 | 2009-01-08 | 삼성전자주식회사 | Equipment for manufacturing semiconductor device |
| JP2011151118A (en) * | 2010-01-20 | 2011-08-04 | Nuflare Technology Inc | Apparatus and method for manufacturing semiconductor |
| US20110312187A1 (en) * | 2010-06-22 | 2011-12-22 | Kunihiko Suzuki | Manufacturing apparatus and method for semiconductor device and cleaning method of manufacturing apparatus for semiconductor |
| JP2012028737A (en) * | 2010-06-22 | 2012-02-09 | Nuflare Technology Inc | Semiconductor manufacturing equipment, semiconductor manufacturing method and cleaning method of the semiconductor manufacturing equipment |
| CN107574422A (en) * | 2017-09-06 | 2018-01-12 | 睿力集成电路有限公司 | Semiconductor production equipment and its cleaning method |
| CN109473330A (en) * | 2017-09-07 | 2019-03-15 | 长鑫存储技术有限公司 | Semiconductor equipment cleaning method and semiconductor process method thereof |
| CN111199897A (en) * | 2018-11-19 | 2020-05-26 | 长鑫存储技术有限公司 | Semiconductor device and semiconductor processing method |
| CN111211065A (en) * | 2018-11-22 | 2020-05-29 | 长鑫存储技术有限公司 | Cleaning method of semiconductor production equipment and semiconductor process method |
| CN111370284A (en) * | 2020-03-13 | 2020-07-03 | 北京北方华创微电子装备有限公司 | Cleaning method for semiconductor heat treatment equipment |
| CN112885745A (en) * | 2021-01-19 | 2021-06-01 | 长鑫存储技术有限公司 | Processing equipment and processing method |
| CN115020303A (en) * | 2022-08-09 | 2022-09-06 | 北京屹唐半导体科技股份有限公司 | Heat treatment device for wafer |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8956704B2 (en) | Methods for modulating step coverage during conformal film deposition | |
| KR102549682B1 (en) | Systems and methods for reducing effluent build-up in a pumping exhaust system | |
| WO2018222614A1 (en) | Quality improvement of films deposited on a substrate | |
| TW201936971A (en) | Method of forming silicon nitride films using microwave plasma | |
| US11894217B2 (en) | Plasma ignition optimization in semiconductor processing chambers | |
| CN115612999A (en) | Semiconductor production equipment and control method and device thereof | |
| KR20140034106A (en) | Methods and apparatus for cleaning deposition chambers | |
| KR20150126295A (en) | Plasma dry strip pretreatment to enhance ion implanted resist removal | |
| TWI839568B (en) | Substrate processing device, semiconductor device manufacturing method and program | |
| TW201705271A (en) | Systems and methods for reducing copper contamination due to substrate processing chambers with components made of alloys including copper | |
| JP2008199015A (en) | Method for heat treating psz film, and method for forming element isolation film of semiconductor element to which its method is applied | |
| CN111524796A (en) | Silicon carbide epitaxial wafer in preparation of silicon carbide power device and processing method thereof | |
| TW202300678A (en) | Enhanced oxidation with hydrogen radical pretreatment | |
| JP2014159612A (en) | Film deposition method | |
| KR20050116247A (en) | Furnace apparatus and heat treatment method using the apparatus | |
| TWI737993B (en) | Prediction method of converter gas output | |
| TW201802957A (en) | Method of manufacturing semiconductor device substrate processing apparatus | |
| KR20200106846A (en) | Method of manufacturing semiconductor device, substrate processing apparatus, and program | |
| US11487304B2 (en) | Process fluid path switching in recipe operations | |
| KR100722935B1 (en) | Apparatus for treating substrates | |
| KR20200084055A (en) | Method for improving deposition-induced CD imbalance using spatially selective ashing of carbon-based films | |
| CN106548957B (en) | Processing chamber and substrate processing system | |
| US20210125820A1 (en) | RF Power Source Operation In Plasma Enhanced Processes | |
| CN115985765A (en) | Thin film processing method, device and system | |
| CN106548958B (en) | Integrated multifunctional cavity and substrate processing system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |