CN107574422A - Semiconductor production equipment and its cleaning method - Google Patents
Semiconductor production equipment and its cleaning method Download PDFInfo
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- CN107574422A CN107574422A CN201710795658.XA CN201710795658A CN107574422A CN 107574422 A CN107574422 A CN 107574422A CN 201710795658 A CN201710795658 A CN 201710795658A CN 107574422 A CN107574422 A CN 107574422A
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Abstract
The present invention provides a kind of semiconductor production equipment and its cleaning method, the cleaning method of semiconductor production equipment and comprised the following steps：Temperature in reaction chamber is cracked into peeling with the film for be deposited on reaction chamber side wall with default rate of temperature fall fast cooling to the second preset temperature from the first preset temperature in the presence of thermal stress；Pressure adjustment in reaction chamber is shaken as default pressure with periodical and changed, and reaction chamber is cleaned using purge gas under above-mentioned pressure conditions, will be discharged in the film particles autoreaction chamber of peeling.The film that the present invention can be deposited on reaction chamber side wall by the periodically concussion of the pressure in fast cooling and chamber cracks peeling in the presence of thermal stress, the film of peeling is discharged into reaction chamber in follow-up cleaning process, the generation of micronic dust powder can be effectively reduced, so as to improve the yield of product, board maintenance period can be reduced simultaneously, reduce production cost.
Description
Technical field
The invention belongs to technical field of manufacturing semiconductors, more particularly to a kind of semiconductor production equipment and its cleaning side
Method.
Background technology
In the manufacturing process of existing semiconductor, micronic dust powder (particle) turns into influences product yield
Key factor.In existing manufacturing process (for example nitride process), with the increase of processing batch so that reaction chamber
The film thickness of room deposited on sidewalls can increase therewith；Again in manufacturing process, due to be related to heating several times and
Temperature-fall period, in the presence of thermal stress, the film being deposited in the reaction chamber side wall can crack stripping and cause micronic dust
The generation of powder, if these micronic dust powders drop on the surface of chip, defect can be formed on the surface of chip, so as to influence product
Yield；By taking LPCVD (low-pressure chemical vapor deposition) silicon nitride reaction chamber as an example, the film for being deposited on reaction chamber side wall splits
If micronic dust powder caused by solution stripping drops on the surface of chip, it can cause subsequent etching processing procedure that failure occurs and causes element short
Road.For example, in DRAM (dynamic random access memory) nitride process equipment, if the silicon nitride positioned at the surface of substrate 11
The upper surface of layer 12 is dropped and has the micronic dust powder, and the micronic dust powder can form particle on the surface of the silicon nitride layer 12 and lack
13 (as shown in Figure 1) are fallen into, and now, if forming graphical photoresist layer 14 in the upper surface of the silicon nitride layer 12 to carry out cloth
During line, understand run-off the straight positioned at the photoresist of the grain defect 13 or collapse (as shown in Figure 2), this necessarily causes follow-up
There is problem in the etching technics for forming groove 15, the region etch that photoresist occurs tilting or collapsed will be blocked, can not be right
The region etch answered forms the groove 15 (as shown in Figure 3), so that follow-up wiring has problem, and then causes device to lose
Effect.
Existing way is that the film of reaction chamber side wall deposition is periodically removed by periodicmaintenance, but the maintenance of normality
Cleaning can cause cost increase and productivity ratio to decline.
The content of the invention
In view of the above the shortcomings that prior art, it is an object of the invention to provide a kind of semiconductor production equipment and its
Cleaning method, for solving present in prior art with the increase of processing batch, the film meeting of reaction chamber side wall deposition
Increase therewith, the film being deposited in the reaction chamber side wall can crack stripping and cause the generation of micronic dust powder, so as to shadow
The problem of ringing the yield of product, and reaction chamber is carried out in order to avoid producing micronic dust powder in reaction chamber in the prior art
The problems such as cost increase and productivity ratio decline caused by periodic maintenance.
To achieve the above object and other related purposes, the present invention provide a kind of cleaning method of semiconductor production equipment,
The semiconductor production equipment includes reaction chamber, and the cleaning method of the semiconductor production equipment comprises the following steps：
By the temperature in the reaction chamber from the first preset temperature with default rate of temperature fall fast cooling to second pre-
If temperature, to cause the film for being deposited on the reaction chamber side wall to crack peeling in the presence of thermal stress；And
While fast cooling, the pressure adjustment in the reaction chamber is shaken as default pressure with periodical and become
Change, and the reaction chamber is cleaned using purge gas under above-mentioned pressure conditions, by the film particles of peeling certainly
Discharged in the reaction chamber.
As a preferred embodiment of the present invention, the default rate of temperature fall is more than 10 DEG C/min.
As a preferred embodiment of the present invention, second preset temperature is 320 DEG C~480 DEG C, and described first is default
Temperature is 720 DEG C~880 DEG C.
As a preferred embodiment of the present invention, the default pressure is less than or equal to 10 millitorrs, and the reaction chamber is in pre-
During if pressure is with periodical concussion change, the periodicity of the pressure concussion change in the reaction chamber is 2~32
The individual cycle；Time needed for each period of change is 40 seconds~110 seconds.
As a preferred embodiment of the present invention, the purge gas is nitrogen.
The present invention also provides a kind of semiconductor technology method, and the semiconductor technology method comprises the following steps：
1) a batch products making technology is carried out, and after the batch products making technology is completed, by the reaction
Temperature in chamber is down to standby temperature by reaction temperature, and the pressure in the reaction chamber is recovered to standard atmospheric pressure；
2) using the cleaning method as described in above-mentioned scheme to being cleaned inside the reaction chamber；
3) after cleaning, the temperature in the reaction chamber is risen into standby temperature, and by the reaction chamber
Pressure recovers to standard atmospheric pressure；And
4) temperature in the reaction chamber is risen into reaction temperature, and after vacuum will be evacuated in the reaction chamber, entered
The another batch products making technology of row.
As a preferred embodiment of the present invention, after step 4) also including repeat step 1)~step 4) is at least once
Step.
The present invention also provides a kind of semiconductor production equipment, and the semiconductor production equipment includes：
Reaction chamber；
Heater, positioned at the side wall perimeter of the reaction chamber, for being internally heated to the reaction chamber；
Purging system, with being connected inside the reaction chamber, for being cleaned inside the reaction chamber；
Cooling system, for during being cleaned to the reaction chamber to the reaction chamber internal cooling,
So that the reaction chamber is cooled with default rate of temperature fall；
Gas extraction system, with being connected inside the reaction chamber, for the gas in the reaction chamber to be discharged；With
And
Control system, it is connected with the purging system and the gas extraction system, for described in the control in cleaning process
Pressure in reaction chamber maintains the periodicity concussion change below default pressure.
As a preferred embodiment of the present invention, the purging system includes：
Purge gas source；And
Purge gas pipeline, one end are connected with the purge gas source, the inside phase of the other end and the reaction chamber
Connection；Also, the gas extraction system includes：
First exhaust pipeline, one end of the first exhaust pipeline inside the reaction chamber with being connected；And
First vavuum pump, it is connected with the downtake pipe great distance from one end of the reaction chamber.
As a preferred embodiment of the present invention, the semiconductor production equipment also includes body of heater, and the body of heater is located at institute
The periphery of heater and the reaction chamber is stated, and there is spacing with the heater and the reaction chamber；The body of heater
Side wall is provided with the air inlet being connected with inside it, and the top of the body of heater is provided with the exhaust outlet being connected with inside it；
The cooling system includes cooling gas source；Cooling gas pipeline, described cooling gas pipeline one end with it is described cold
But gas source is connected individual, and the other end is connected via the air inlet with the furnace interior；Second exhaust pipeline, described
Two gas exhaust piping one end are connected via the vent ports with the furnace interior；Second vavuum pump, with the second exhaust
The one end of pipeline away from the body of heater is connected；
The semiconductor production equipment also includes air door, and the air door includes：
Door leaf, positioned at the top of the body of heater, and positioned at the periphery of the exhaust outlet；And
Drive device, it is connected with the door leaf, for driving the door leaf by the row when the heater works
Gas port covers, and drives the door leaf to be moved to the row when the heater is stopped and the cooling system works
At the top of the body of heater of gas port periphery, to ensure the exhaust ports in open mode.
As described above, semiconductor production equipment provided by the invention and its cleaning method, have the advantages that：This hair
The cleaning method of bright semiconductor production equipment can be deposited on the film of the reaction chamber side wall by fast cooling
Crack and peel off in the presence of thermal stress, the pressure adjustment in reaction chamber is shaken as default pressure with periodical, rear
The film of peeling is discharged into the reaction chamber in continuous cleaning process, the generation of micronic dust powder can be effectively reduced, so as to
The yield of product is improved, while board maintenance period can be reduced, reduces production cost；In default pressure while fast cooling
The reaction chamber is cleaned below, the suction force in cleaning process can be increased, effectively improve cleaning efficiency.
Brief description of the drawings
Fig. 1 to Fig. 3 is shown as having micronic dust powder to drop in silicon nitride layer table in existing DRAM nitride process equipment
Face forms grain defect so that understands run-off the straight positioned at the photoresist of the grain defect or collapses, so as to cause device to lose
The structural representation of effect.
Fig. 4 is shown as in the reaction chamber in the cleaning method of the semiconductor production equipment provided in the embodiment of the present invention one
Temperature time history plot.
Fig. 5 is shown as in the reaction chamber in the cleaning method of the semiconductor production equipment provided in the embodiment of the present invention one
Pressure time history plot.
Fig. 6 to Fig. 7 is shown as the reaction in the cleaning method of the semiconductor production equipment provided in the embodiment of the present invention one
The film of chamber sidewall deposition cracks the schematic diagram being removed in cleaning process.
Fig. 8 is shown as the cleaning method of the semiconductor production equipment provided in embodiments of the invention one applied to DRAM's
The semiconductor structure schematic diagram obtained after nitride process equipment.
Fig. 9 is shown as the flow chart of the semiconductor technology method provided in the embodiment of the present invention two.
Figure 10 be shown as temperature in the reaction chamber in the semiconductor technology method that is provided in the embodiment of the present invention two with
The curve map of time change.
Figure 11 be shown as pressure in the reaction chamber in the semiconductor technology method that is provided in the embodiment of the present invention two with
The curve map of time change.
Figure 12 is shown as the structural representation of the semiconductor equipment provided in the embodiment of the present invention three.
Reference numerals explanation
11 substrates
12 silicon nitride layers
13 grain defects
14 graphical photoresist layers
15 grooves
21 films
At 211 film cracking
212 film particles peeled off
22 substrates
23 silicon nitride layers
24 graphical photoresist layers
25 grooves
26 reaction chambers
261 reaction chamber side walls
262 first quartz ampoules
263 second quartz ampoules
27 heaters
28 purge gas pipelines
29 cooling systems
291 cooling gas pipelines
292 second exhaust pipelines
293 second vavuum pumps
30 gas extraction system
301 first exhaust pipelines
302 valves
31 bodies of heater
311 air inlets
312 exhaust outlets
32 door leafs
Embodiment
Illustrate embodiments of the present invention below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands the further advantage and effect of the present invention easily.The present invention can also pass through specific realities different in addition
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Fig. 4 is referred to Figure 12.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, though only showing the component relevant with the present invention in diagram rather than according to package count during actual implement
Mesh, shape and size are drawn, and form, quantity and the ratio of each component can be a kind of random change during its actual implementation, and its
Assembly layout form may also be increasingly complex.
Embodiment one
Fig. 4 to Fig. 7 is referred to, the present invention provides a kind of cleaning method of semiconductor production equipment, the semiconductor production
Equipment includes reaction chamber, and the cleaning method of the semiconductor production equipment comprises the following steps：
By the temperature in the reaction chamber from the first preset temperature with default rate of temperature fall fast cooling to second pre-
If temperature, peeling, such as Fig. 6 are cracked in the presence of thermal stress with the film 21 for be deposited on the reaction chamber side wall 261
Shown, the film 21 peels off from 211 cracking at film cracking；And
While fast cooling, the pressure adjustment in the reaction chamber is shaken as default pressure with periodical and become
Change, and the reaction chamber is cleaned using purge gas under above-mentioned pressure conditions, by the film particles of peeling certainly
Discharged in the reaction chamber, as shown in Figure 7；Wherein, the solid arrow in Fig. 7 is the direction of purge gas, the dotted line in Fig. 7
Arrow is the direction of motion for the film particles 212 peeled off.
As an example, the cleaning method of the semiconductor production equipment can be after a batch products making technology be completed
Carry out, now, the initial temperature of the reaction chamber is the standby temperature of the semiconductor production equipment.By the reaction chamber
Indoor temperature from first preset temperature with default rate of temperature fall fast cooling to the second preset temperature before, Ke Yixian
Temperature in the reaction chamber is increased to by first preset temperature from standby temperature by heating step.First will be described anti-
Answer the temperature in chamber to be warming up to first preset temperature from the standby temperature again to be cooled, cooling extent can be increased
Section, under same rate of temperature fall, the time of fast cooling can be increased, so that being deposited on inside the reaction chamber
Film there is longer time cracking to peel off so that the film cracking being deposited in the reaction chamber is peeled off more thorough.
As an example, first preset temperature can be set according to being actually needed, it is preferable that described first is default
Temperature can be but be not limited only to the reaction temperature when semiconductor production equipment performs making technology, it is further preferable that originally
In embodiment, first preset temperature is 720 DEG C~880 DEG C.
As an example, the default rate of temperature fall can be set according to being actually needed, but it should be recognized that institute
Stating default rate of temperature fall can not be too small, can not be too big；If the default rate of temperature fall is too small, produced in temperature-fall period
Thermal stress can be not big enough, crack and peel off insufficient for the film for being deposited on the reaction chamber side wall, it is clear so as to influence
The effect washed；If the default rate of temperature fall is too big, requirement that can be to cooling system is excessively harsh, so as to cause the increasing of cost
Add, meanwhile, if rate of temperature fall is too big, also easily the semiconductor production equipment is caused damage.Preferably, the default drop
Warm speed be more than 5 DEG C/min, for example, 6 DEG C/min, 7 DEG C/min, 8 DEG C/min, 9 DEG C/min, 10 DEG C/min etc.,
It is further preferable that the default rate of temperature fall is more than 10 DEG C/min, it is highly preferred that in the present embodiment, the default drop
Warm speed is 10 DEG C/min~13 DEG C/min, is specifically as follows 10 DEG C/min, 11 DEG C/min, 12 DEG C/min or 13 DEG C/minute
Clock.The default rate of temperature fall is set greater than 5 DEG C/min, the rate of temperature fall is significantly greater than existing semiconductor production
The rate of temperature fall (generally 2 DEG C/min~5 DEG C/min) of equipment, this will cause the thermal stress that is subject to inside the reaction chamber
Larger, under larger thermal stress effect, peeling can be cracked by being deposited on the film of the reaction chamber side wall, and from the reaction
Fallen down in chamber sidewall, so as to be beneficial to be pulled away removing in follow-up cleaning process.In the present embodiment, by the default drop
Warm speed is arranged to 10 DEG C/min~13 DEG C/min, under the rate of temperature fall, the film that is deposited on inside the reaction chamber
The more thorough of peeling can be cracked in the presence of thermal stress.
As an example, second preset temperature can be set according to being actually needed, but it should be recognized that described
Second preset temperature can not be too high, can not be too low；If second preset temperature is too high, whole fast cooling process can be caused
Terminate quickly, i.e., the process of fast cooling can be very short, and the film for being deposited on the reaction chamber side wall also has not enough time to cracking stripping
Fall, so as to not reach expected effect；Because cleaning is typically carried out between adjacent two batch products making technology, if described the
Two preset temperatures are too low, and the time risen to again from second preset temperature needed for reaction temperature can be longer, can cause to produce
The increase of cost and production efficiency it is low.Preferably, in the present embodiment, second preset temperature can be but be not limited only to
320 DEG C~480 DEG C.
As an example, the default pressure can be set according to being actually needed, it is preferable that described in the present embodiment
Default pressure can be less than or equal to 10 millitorrs.Under conditions of less than 10 millitorrs purge gas is passed through into the reaction chamber
When being cleaned to the reaction chamber, because the pressure in the reaction chamber is very low, taking out in cleaning process can be increased
Suction, effectively improve cleaning efficiency.Certainly, in other examples, the default pressure can also be other numerical value, for example 20 milli
Support, 50 millitorrs, 100 millitorrs etc., are not specifically limited herein.
In one example, while fast cooling, the pressure in the reaction chamber is adjusted below as default pressure
Periodically concussion change specific method can be the reaction chamber is performed under conditions of less than the default pressure to
A few cleaning frequency, a cleaning frequency comprise the following steps：
Purge gas is passed through into the reaction chamber, now, corresponding to the pressure being located in Fig. 5 below the default pressure
Increased curve from low to high by force；Vacuum will be evacuated in the reaction chamber, now, be preset corresponding in Fig. 5 positioned at described
The curve of pressure from high to low below pressure.That is the pressure change curve in Fig. 5 below the default pressure is by as little as
Height, then a period of change from high to low is a cleaning frequency.It should be noted that into the reaction chamber
During being passed through purge gas, the pressure in the reaction chamber will ensure to be less than the default pressure, in the process of exhaust
In, the reaction chamber can not also be evacuated to vacuum.
As an example, the reaction chamber in default pressure with periodical concussion change during, the reaction chamber
The periodicity of indoor pressure concussion change is 2~32 cycles；Time needed for each period of change is 40 seconds~110 seconds；
I.e. in this example, under conditions of less than the default pressure is performed to the reaction chamber 2~32 cleaning frequencies, that is, existed
During whole fast cooling, the number of the cleaning frequency is 2~32 times.It is corresponding, in this implementation, each cleaning
Time needed for cycle can be but be not limited only to 40 seconds~110 seconds.During fast cooling, above-mentioned cleaning week is performed repeatedly
Phase, it on the one hand can prevent from causing during being passed through purged with purge gas the pressure in the reaction chamber to become big, by described in
Pressure in reaction chamber is maintained below default pressure；On the other hand, cleaning frequency number is more, it is meant that the number of cleaning
It is more, cleaning performance can be effectively increased；Another further aspect, the pressure in the reaction chamber can cause in periodically concussion change
Air-flow in the reaction chamber is unstable, the turbulization in the reaction chamber so that the micronic dust in the reaction chamber
Powder is kicked up, and the reaction chamber is taken out of so as to be easier the cleaned gas in the presence of the suction force of vavuum pump, so as to
So that cleaning is more thorough.
As an example, in each cleaning frequency, the time that purge gas is passed through into the reaction chamber can be with
It is identical that time needed for vacuum will be evacuated in the reaction chamber.Certainly, in other examples, it is passed through into the reaction chamber
The time of purge gas can also be different from will be evacuated to time needed for vacuum in the reaction chamber.
In another example, can also continue to be passed through purge gas into the reaction chamber, but to the reaction chamber
While interior is passed through the purge gas, the flow of the purge gas by maintaining to be passed through is constant, adjusts vavuum pump
Suction force so that the suction force of the vavuum pump is in cyclically-varying, to cause the pressure in the reaction chamber in default pressure
Shaken by force and changed with periodical.
In another example, it can also continue to be passed through purge gas into the reaction chamber, to the reaction chamber
While being inside passed through the purge gas, by maintaining the suction force of the vavuum pump constant, the stream of the purge gas is adjusted
Amount so that the flow of the purge gas is in cyclically-varying, with cause the pressure in the reaction chamber in default pressure with
Periodical concussion change.
In another example, it can also continue to be passed through purge gas into the reaction chamber, to the reaction chamber
While being inside passed through the purge gas, by adjusting the flow of the purge gas and the suction force of the vavuum pump so that
The suction force of the flow of the purge gas and the vavuum pump is in cyclically-varying, to cause the pressure in the reaction chamber
It is better than default pressure and change is shaken with periodical.
As an example, the purge gas can be nitrogen；Certainly, in other examples, it is described cleaning other can also
For dry air or inert gas etc..
Referring to Fig. 8, the cleaning method in the present embodiment is applied into the nitridation in DRAM (dynamic random access memory)
When in silicon technology equipment, because the micronic dust powder to be dropped from the reaction chamber side wall 261 can be completely removed, positioned at
The upper surface of the silicon nitride layer 23 on the surface of substrate 22 will not form grain defect, now, if in the upper table of the silicon nitride layer 23
When face forms graphical photoresist layer 24 to be connected up, can be formed in the nitride layer 23 needed for groove 25, from
And ensure the performance of device being subsequently formed.
Embodiment two
Referring to Fig. 9, the present invention also provides a kind of semiconductor technology method, the semiconductor technology method includes following step
Suddenly：
1) a batch products making technology is carried out, and after the batch products making technology is completed, by the reaction
Temperature in chamber is down to standby temperature by reaction temperature, and the pressure in the reaction chamber is recovered to standard atmospheric pressure；
2) using the cleaning method as described in embodiment one to being cleaned inside the reaction chamber；
3) after cleaning, the temperature in the reaction chamber is risen into standby temperature, and by the reaction chamber
Pressure recovers to standard atmospheric pressure；And
4) temperature in the reaction chamber is risen into reaction temperature, and after vacuum will be evacuated in the reaction chamber, entered
The another batch products making technology of row.
The S1 steps and Figure 10 to Figure 11 in Fig. 9 are referred to, carries out a batch products making technology, and in described batch of completion
After secondary product making technology, the temperature in the reaction chamber is down to standby temperature by reaction temperature, and by the reaction
Pressure in chamber recovers to standard atmospheric pressure.
As an example, the making technology can be any one thin film deposition processes, for example, using LPCVD technique systems
Technique of standby silicon nitride layer etc..
As an example, the temperature versus time curve described in the step in reaction chamber is as shown in Figure 10, entering
Before the batch products making technology of row one, the temperature in the reaction chamber is in standby temperature；Performing the batch products
During making technology, the temperature in the reaction chamber rises to reaction temperature；After completing the batch products making technology,
Temperature in the reaction chamber is down to standby temperature by reaction temperature.
As an example, the pressure versus time curve described in the step in reaction chamber is as shown in figure 11, entering
Before the batch products making technology of row one, the pressure in the reaction chamber is in standard atmospheric pressure；Perform the batch products
During making technology, the pressure in institute's reaction chamber is 0, i.e., described batch products making technology is carried out under vacuum condition；
After completing the batch products making technology, the pressure in the reaction chamber recovers to standard atmospheric pressure.
In step 2), the S2 steps in Fig. 9 are referred to, using the cleaning method as described in embodiment one to described anti-
Chamber interior is answered to be cleaned.
Method to being cleaned inside the reaction chamber is not repeated herein referring specifically to embodiment one.
In step 3), S3 steps and Figure 10 to Figure 11 in Fig. 9 are referred to, after cleaning, by the reaction chamber
Interior temperature rises to standby temperature, and the pressure in the reaction chamber is recovered to standard atmospheric pressure.
As an example, the temperature in the reaction chamber risen into standby temperature, and by the pressure in the reaction chamber
It is known to those skilled in the art to recover to standard atmospheric pressure, is not repeated herein.
In step 4), S4 steps and Figure 10 to Figure 11 in Fig. 9 are referred to, the temperature in the reaction chamber is risen to
Reaction temperature, and after vacuum will be evacuated in the reaction chamber, carry out another batch products making technology.
As an example, the step is roughly the same with the step of step 1), referring specifically to the description of step 1), herein no longer
It is tired to state.
As an example, step 4) after also include repeat step 1)~step 4) at least once the step of.Repeat step 1)
The number of~step 4) can be set as needed, can be once, twice or repeatedly.
Embodiment three
Figure 12 is referred to, the present invention also provides a kind of semiconductor production equipment, and the semiconductor production equipment is used to perform
Semiconductor technology method described in embodiment two, the semiconductor production equipment include：Reaction chamber 26；Heater 27, institute
The side wall perimeter that heater 27 is located at the reaction chamber 26 is stated, for being internally heated to the reaction chamber 26；Cleaning
System, the purging system inside the reaction chamber 26 with being connected, for being cleaned inside the reaction chamber 26；
Cooling system 29, the cooling system 29 are incorporated into the reaction chamber 26, for being cleaned to the reaction chamber 26
During to the internal cooling of reaction chamber 26 so that the reaction chamber 26 is cooled with default rate of temperature fall；
Gas extraction system 30, the gas extraction system 30 inside the reaction chamber 26 with being connected, for by the reaction chamber 26
Gas is discharged；And control system (not shown), the control system are connected with the purging system and the gas extraction system 30
It is logical, become for controlling the periodicity that the pressure in the reaction chamber 26 is maintained below default pressure to shake in cleaning process
Change.
As an example, being provided with the first quartz ampoule 2312 in the reaction chamber 26 and positioned at first quartz ampoule 2312
Top and the second quartz ampoule 263 of periphery.
As an example, the purging system includes：Purge gas source (not shown), the purge gas source can be but not
It is only limitted to source nitrogen；And purge gas pipeline 28, described one end of purge gas pipeline 28 are connected with the purge gas source
Logical, the other end is connected with the inside of the reaction chamber 26.
As an example, the gas extraction system 30 includes：First exhaust pipeline 301, one end of the first exhaust pipeline 301
It is connected with inside the reaction chamber 26；First vavuum pump (not shown), first vavuum pump and the downtake pipe
The one end of road 301 away from the reaction chamber 26 is connected, for during making technology by the reaction chamber 26
Portion's vacuum pumping, and extract the purge gas in the reaction chamber 26 out in cleaning process.
As an example, the gas extraction system 30 also includes a valve 302, the valve 302 is arranged at the first exhaust
On pipeline 301, for controlling the switch of the first exhaust pipeline 301.
As an example, the semiconductor production equipment also includes body of heater 31, the body of heater 31 be located at the heater 27 and
The periphery of the reaction chamber 26, and there is spacing with the heater 27 and the reaction chamber 26；The side of the body of heater 31
Wall is provided with the air inlet 311 being connected with inside it, and the top of the body of heater 31 is provided with the exhaust outlet being connected with inside it
312；The cooling system 29 includes cooling gas source (not shown)；Cooling gas pipeline 291, the cooling gas pipeline 291
One end is connected with the cooling gas source, and the other end is via the air inlet 311 with being connected inside the body of heater 31；The
Two gas exhaust pipings 292, described one end of second exhaust pipeline 292 are connected via the vent ports 312 with the inside of body of heater 31
It is logical；Second vavuum pump 293, second vavuum pump 293 and one end phase of the second exhaust pipeline 292 away from the body of heater 31
Connection.
As an example, the semiconductor production equipment also includes air door, the air door includes：Door leaf 32, the door leaf 32
Positioned at the top of the body of heater 31, and positioned at the periphery of the exhaust outlet 312；The door leaf 32 can be platy structure, described
Door leaf 32 can be made up of two parts symmetrical structure, for example, two panels semicircular plate, two panels rectangular slab etc.；Drive device (is not shown
Go out), the drive device is connected with the door leaf 32, for driving the door leaf 32 by institute when the heater 27 works
State exhaust outlet 312 to cover, and the door leaf is driven when the heater 27 is stopped and the cooling system 29 works
32 are moved at the top of the body of heater of the periphery of exhaust outlet 312, to ensure that the exhaust outlet 312 is in open mode so that
Cooling gas can discharge via the exhaust outlet 312.
In summary, the present invention provides a kind of semiconductor production equipment and its cleaning method, the semiconductor production equipment
Including reaction chamber, the cleaning method of the semiconductor production equipment comprises the following steps：By the temperature in the reaction chamber
From the first preset temperature with default rate of temperature fall fast cooling to the second preset temperature, to be deposited on the reaction chamber
The film of side wall cracks peeling in the presence of thermal stress；While fast cooling, the pressure in the reaction chamber is adjusted
Shaken and changed with periodical as default pressure, and the reaction chamber is entered using purge gas under above-mentioned pressure conditions
Row cleaning, the film particles of peeling are discharged from the reaction chamber.The cleaning side of the semiconductor production equipment of the present invention
The film that method can be deposited on the reaction chamber side wall by fast cooling cracks peeling in the presence of thermal stress, will
Soviet Union search reaction chamber you pressure adjustment shaken as default pressure with periodical, by peeling in follow-up cleaning process
Film discharges the reaction chamber, can be effectively reduced the generation of micronic dust powder, so as to improve the yield of product, while can be with
Board maintenance period is reduced, reduces production cost；The reaction chamber is carried out below default pressure while fast cooling
Cleaning, can increase the suction force in cleaning process, effectively improve cleaning efficiency.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (10)
1. a kind of cleaning method of semiconductor production equipment, the semiconductor production equipment includes reaction chamber, it is characterised in that
The cleaning method of the semiconductor production equipment comprises the following steps：
By the temperature in the reaction chamber from the first preset temperature with default rate of temperature fall fast cooling to the second default temperature
Degree, to cause the film for being deposited on the reaction chamber side wall to crack peeling in the presence of thermal stress；And
While fast cooling, the pressure adjustment in the reaction chamber is shaken as default pressure with periodical and changed,
And the reaction chamber is cleaned using purge gas under above-mentioned pressure conditions, by the film particles of peeling described in
Discharged in reaction chamber.
2. the cleaning method of semiconductor production equipment according to claim 1, it is characterised in that the default cooling speed
Rate is more than 10 DEG C/min.
3. the cleaning method of semiconductor production equipment according to claim 1, it is characterised in that second preset temperature
For 320 DEG C~480 DEG C, first preset temperature is 720 DEG C~880 DEG C.
4. the cleaning method of semiconductor production equipment according to claim 1, it is characterised in that the default pressure is small
In equal to 10 millitorrs, the reaction chamber is during default pressure is with periodical concussion change, in the reaction chamber
Pressure concussion change periodicity be 2~32 cycles；Time needed for each period of change is 40 seconds~110 seconds.
5. the cleaning method of the semiconductor production equipment according to any one of Claims 1-4, it is characterised in that described clear
Gas washing body is nitrogen.
6. a kind of semiconductor technology method, is characterised by, the semiconductor technology method comprises the following steps：
1) a batch products making technology is carried out, and after the batch products making technology is completed, by the reaction chamber
Interior temperature is down to standby temperature by reaction temperature, and the pressure in the reaction chamber is recovered to standard atmospheric pressure；
2) using cleaning method as claimed in claim 1 to being cleaned inside the reaction chamber；
3) after cleaning, the temperature in the reaction chamber is risen into standby temperature, and by the pressure in the reaction chamber
Recover to standard atmospheric pressure；And
4) temperature in the reaction chamber is risen into reaction temperature, and after vacuum will be evacuated in the reaction chamber, carried out again
One batch products making technology.
7. semiconductor technology method according to claim 6, it is characterised in that also include repeat step 1 after step 4))
~step 4) at least once the step of.
8. a kind of semiconductor production equipment, it is characterised in that the semiconductor production equipment includes：
Reaction chamber；
Heater, positioned at the side wall perimeter of the reaction chamber, for being internally heated to the reaction chamber；
Purging system, with being connected inside the reaction chamber, for being cleaned inside the reaction chamber；
Cooling system, be incorporated into the reaction chamber, for during being cleaned to the reaction chamber to described anti-
Chamber interior is answered to cool down so that the reaction chamber is cooled with default rate of temperature fall；
Gas extraction system, with being connected inside the reaction chamber, for the gas in the reaction chamber to be discharged；And
Control system, it is connected with the purging system and the gas extraction system, for controlling the reaction in cleaning process
Pressure in chamber maintains the periodicity concussion change below default pressure.
9. semiconductor production equipment according to claim 8, it is characterised in that the purging system includes：
Purge gas source；And
Purge gas pipeline, one end are connected with the purge gas source, and the other end is connected with the inside of the reaction chamber；
Also, the gas extraction system includes：
First exhaust pipeline, one end of the first exhaust pipeline inside the reaction chamber with being connected；And
First vavuum pump, it is connected with the downtake pipe great distance from one end of the reaction chamber.
10. semiconductor production equipment according to claim 8 or claim 9, it is characterised in that
The semiconductor production equipment also includes body of heater, and the body of heater is located at the periphery of the heater and the reaction chamber,
And there is spacing with the heater and the reaction chamber；The side wall of the body of heater is provided with the air inlet being connected with inside it
Mouthful, the top of the body of heater is provided with the exhaust outlet being connected with inside it；
The cooling system includes cooling gas source；Cooling gas pipeline, described cooling gas pipeline one end and the cooling gas
Body source is connected, and the other end is connected via the air inlet with the furnace interior；Second exhaust pipeline, the second row
Air pipe one end is connected via the vent ports with the furnace interior；Second vavuum pump, with the second exhaust pipeline
One end away from the body of heater is connected；
The semiconductor production equipment also includes air door, and the air door includes：
Door leaf, positioned at the top of the body of heater, and positioned at the periphery of the exhaust outlet；And
Drive device, it is connected with the door leaf, for driving the door leaf by the exhaust outlet when the heater works
Cover, and drive the door leaf to be moved to the exhaust outlet when the heater is stopped and the cooling system works
At the top of the body of heater of periphery, to ensure the exhaust ports in open mode.
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| CN110323115A (en) * | 2018-03-30 | 2019-10-11 | 长鑫存储技术有限公司 | Semiconductor production equipment method for self-cleaning and grid word line structure preparation method |
| CN111809165A (en) * | 2020-07-16 | 2020-10-23 | 上海华力微电子有限公司 | Cleaning method of deposition equipment |
| CN112309815A (en) * | 2019-07-26 | 2021-02-02 | 山东浪潮华光光电子股份有限公司 | Recovery method for MOCVD system for producing LED epitaxial wafer after maintenance |
| CN113838733A (en) * | 2020-06-23 | 2021-12-24 | 拓荆科技股份有限公司 | Method for improving environment in clean chamber |
| CN114121645A (en) * | 2021-11-03 | 2022-03-01 | 上海华力集成电路制造有限公司 | Epitaxial process method |
| CN115612999A (en) * | 2022-10-19 | 2023-01-17 | 长鑫存储技术有限公司 | Semiconductor production equipment and control method and device thereof |
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| CN110323115A (en) * | 2018-03-30 | 2019-10-11 | 长鑫存储技术有限公司 | Semiconductor production equipment method for self-cleaning and grid word line structure preparation method |
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| CN112309815A (en) * | 2019-07-26 | 2021-02-02 | 山东浪潮华光光电子股份有限公司 | Recovery method for MOCVD system for producing LED epitaxial wafer after maintenance |
| CN112309815B (en) * | 2019-07-26 | 2023-07-28 | 山东浪潮华光光电子股份有限公司 | Recovery method after maintenance of MOCVD (metal organic chemical vapor deposition) system for producing LED (light-emitting diode) epitaxial wafer |
| CN113838733A (en) * | 2020-06-23 | 2021-12-24 | 拓荆科技股份有限公司 | Method for improving environment in clean chamber |
| CN113838733B (en) * | 2020-06-23 | 2024-07-16 | 拓荆科技股份有限公司 | Method for improving clean chamber interior environment |
| CN111809165A (en) * | 2020-07-16 | 2020-10-23 | 上海华力微电子有限公司 | Cleaning method of deposition equipment |
| CN114121645A (en) * | 2021-11-03 | 2022-03-01 | 上海华力集成电路制造有限公司 | Epitaxial process method |
| CN115612999A (en) * | 2022-10-19 | 2023-01-17 | 长鑫存储技术有限公司 | Semiconductor production equipment and control method and device thereof |
| CN117238743A (en) * | 2023-11-10 | 2023-12-15 | 合肥晶合集成电路股份有限公司 | Method for improving annular defect of wafer edge |
| CN117238743B (en) * | 2023-11-10 | 2024-02-09 | 合肥晶合集成电路股份有限公司 | Method for improving annular defect of wafer edge |
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