CN115613007A - Film forming method for improving warping - Google Patents
Film forming method for improving warping Download PDFInfo
- Publication number
- CN115613007A CN115613007A CN202211251913.1A CN202211251913A CN115613007A CN 115613007 A CN115613007 A CN 115613007A CN 202211251913 A CN202211251913 A CN 202211251913A CN 115613007 A CN115613007 A CN 115613007A
- Authority
- CN
- China
- Prior art keywords
- temperature
- film forming
- furnace
- inlet pipe
- silicon wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 39
- 239000010703 silicon Substances 0.000 claims abstract description 39
- 239000007789 gas Substances 0.000 claims abstract description 22
- 230000008569 process Effects 0.000 claims abstract description 21
- 239000012495 reaction gas Substances 0.000 claims abstract description 18
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims abstract description 12
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 27
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 230000035484 reaction time Effects 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 230000007423 decrease Effects 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 33
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
Abstract
The invention relates to the technical field of semiconductors. A film forming method for improving warping is characterized in that when a film forming process is carried out through a low-pressure chemical vapor deposition furnace, air is fed from the bottom of a furnace chamber through an air inlet pipe, and the warping rate of a silicon wafer after the film forming process is adjusted by adjusting the length of the air inlet pipe extending into the furnace chamber of the low-pressure chemical vapor deposition furnace. The concentration of the reaction gas at the bottom is higher, and the reaction gas gradually decreases to the top. This application extends the intake pipe toward the stove, has realized that middle part concentration can be on the high side, to the cascaded decline in both ends, and the difference between each warm area diminishes, and the warpage variable quantity also can diminish. The concentration of the reaction gas in each temperature zone in the furnace is changed by changing the position of the gas inlet pipe, so that the temperature of each temperature zone in the furnace is influenced, and the warping of partial positions is further improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a film forming method.
Background
The vertical low-pressure chemical vapor deposition technology is the main deposition means of the polysilicon back seal at present. Due to the vertical furnace body, the difference of the warping changes caused by all parts in the furnace is large, and the warping of the silicon wafer is large easily at the part of the furnace, so that the yield loss is caused.
The vertical low-pressure chemical vapor deposition furnace is internally provided with four temperature zones with different temperatures from top to bottom, and the vertical low-pressure chemical vapor deposition furnace is internally provided with an M7 layer, an M6 layer, an M5 layer, an M4 layer, an M3 layer, an M2 layer and an M1 layer which are used for placing silicon wafers from bottom to top in sequence.
Through tests, the warpage change of the M7 position is obviously larger than that of the M1 position, and the main reasons for causing the undesirable change of the warpage of each part in the furnace are as follows: the reaction cavity is a vertical single-tube bottom air inlet structure; the requirements of customers on the film thickness and the uniformity in the product sheet can be met, but the gradient between 4 temperature areas is larger: the lower the temperature toward the BOTTOM (BOTTOM end), the more the warpage (warp) increases significantly after single-side polishing (single-side polishing) (the increase in warpage is also in a gradient increasing mode, the greater the increase in warpage toward the BOTTOM end).
At present, a film forming method capable of realizing the control of warping of a vertical low-pressure chemical vapor deposition furnace is lacked.
Disclosure of Invention
The present invention provides a film forming method for improving warpage, so as to solve at least one of the above technical problems.
In order to achieve the purpose, the invention provides a film forming method for improving warpage, which is characterized in that when a film forming process is carried out by a low-pressure chemical vapor deposition furnace, air is fed from the bottom of a furnace chamber by an air inlet pipe, and the warpage rate of a silicon wafer after the film forming process is adjusted by adjusting the length of the air inlet pipe extending into the furnace chamber of the low-pressure chemical vapor deposition furnace.
Preferably, seven silicon wafer placing layers are arranged in the furnace chamber from top to bottom;
the top of the air inlet pipe is positioned between the third layer silicon wafer placing layer and the seventh layer silicon wafer placing layer from top to bottom.
Further preferably, the air inlet pipe is a telescopic pipe. The length can be conveniently adjusted according to the requirement.
Further preferably, the air inlet pipe comprises a vertical part which is vertically arranged and is positioned in the furnace cavity;
the lateral wall of vertical portion has seted up the venthole, the aperture of venthole increases progressively from last to bottom.
Further preferably, the gas inlet pipe is a quartz pipe.
More preferably, when the deposition thickness of the film forming step is 300 to 1000nm, the film forming step includes the steps of:
step one, cleaning a monocrystalline silicon wafer;
step two, putting the cleaned monocrystalline silicon wafer on a silicon boat made of SiC material for hot processing, wherein the principle is that SiH is introduced 4 The pure monocrystalline silicon is deposited on the back of the silicon wafer, and the mode of carrying out heat treatment on the monocrystalline silicon wafer is as follows: before the temperature is raised, the cleaned monocrystalline silicon piece is placed on a silicon boat, high-purity nitrogen is introduced into the furnace and kept for 15-25 minutes for gas removal, then the silicon boat is slowly heated to 500-700 ℃ and kept for 20-60 minutes, then the temperature is slowly lowered, the monocrystalline silicon piece is taken out, and at the moment, a layer of polycrystalline silicon film is formed on the surface of the monocrystalline silicon piece.
In the second step, in the thermal decomposition process, silane is used as reaction gas, a chemical vapor deposition method is adopted to deposit a polycrystalline silicon film on the monocrystalline silicon wafer after thermal oxidation treatment, and the process parameters of depositing the polycrystalline silicon film on the monocrystalline silicon wafer after thermal oxidation treatment are as follows: radio frequency power of 100-150W, radio frequency of 13.56MHz, substrate temperature of 500-700 deg.C, cavity pressure of 20-35Pa, and purity of 99.999% SiH 4 Gas 0.8-1.2slm, deposition time 20-60 minutes.
More preferably, in the film forming process, when the air inlet flow of the air inlet pipe is controlled to be 0.8-1.2slm, siH is input 4 The gas time is controlled to be 20-60 minutes, and the temperature in the furnace cavity is controlled to be four temperature areas with the temperature of 640 +/-50 ℃ from top to bottom.
The furnace cavity is sequentially provided with four temperature areas from top to bottom, wherein the four temperature areas are a first temperature area, a second temperature area, a third temperature area and a fourth temperature area respectively;
when the input height of the gas inlet pipe is 15cm away from the furnace mouth, siH as a reaction gas is input 4 The temperatures of the first temperature area, the second temperature area, the third temperature area and the fourth temperature area are 650 ℃, 646 ℃, 640 ℃ and 638 ℃ respectively, and the reaction time is 20-60min;
when the input height of the gas inlet pipe is 35cm away from the furnace mouth, siH as a reaction gas is input 4 A first temperature region, a second temperature region, a third temperature region and a fourth temperature regionThe temperature of the reaction is 650 ℃, 646 ℃, 645 ℃ and 647 ℃ respectively, and the reaction time is 20-60min;
when the input height of the gas inlet pipe is 57cm away from the furnace mouth, siH of reaction gas is input 4 The temperatures of the first temperature zone, the second temperature zone, the third temperature zone and the fourth temperature zone are respectively 640 ℃, 642 ℃, 648 ℃ and 651 ℃, and the reaction time is 20-60min.
The concentration of different positions in the furnace cavity tends to be consistent by changing different heights of the air inlet pipe in the furnace cavity. Thereby reducing the temperature difference at different positions in the furnace chamber to reduce the warpage change.
More preferably, the rate of change in warpage of the silicon wafer after film formation is controlled to WARPBF not more than 15.
Has the advantages that:
the reaction gas concentration at the bottom is higher, and the reaction gas concentration at the bottom is reduced in a step manner to the top. This application extends the intake pipe toward the stove, has realized that middle part concentration can be on the high side, to the cascaded decline in both ends, and the difference between each warm area diminishes, and the warpage variable quantity also can diminish.
The concentration of the reaction gas in each temperature zone in the furnace is changed by changing the position of the gas inlet pipe, so that the temperature of each temperature zone in the furnace is influenced, and the warping of partial positions is further improved.
Drawings
Fig. 1 is a schematic structural diagram of embodiment 1 of the present invention.
Wherein: 1 is an air inlet pipe.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
Referring to fig. 1, embodiment 1 shows a film forming method for improving warpage, which is characterized in that when a film forming process is performed in a low pressure chemical vapor deposition furnace, an air inlet pipe is used for introducing air from the bottom of a furnace chamber, and the warpage rate after a silicon wafer film forming process is adjusted by adjusting the length of the air inlet pipe extending into the furnace chamber of the low pressure chemical vapor deposition furnace.
Seven silicon chip placing layers are arranged in the furnace chamber from top to bottom; the top of the air inlet pipe is positioned between the third silicon wafer placing layer and the seventh silicon wafer placing layer from top to bottom. The seven silicon wafer placing layers are sequentially a first silicon wafer placing layer, a second silicon wafer placing layer, a third silicon wafer placing layer, a fourth silicon wafer placing layer, a fifth silicon wafer placing layer, a sixth silicon wafer placing layer and a seventh silicon wafer placing layer which are arranged from top to bottom.
The air inlet pipe 1 is a telescopic pipe. The length can be conveniently adjusted according to the requirement.
The air inlet pipe 1 comprises a vertical part which is vertically arranged and is positioned in the furnace cavity; the lateral wall of vertical portion has seted up the venthole, and the aperture of venthole increases progressively from last to bottom.
The air inlet pipe is a quartz pipeline.
When the deposition thickness of the film forming process is 300-1000nm, the film forming process comprises the following steps:
step one, cleaning a monocrystalline silicon wafer;
step two, putting the cleaned monocrystalline silicon wafer on a silicon boat made of SiC material for hot processing, wherein the principle is that SiH is introduced 4 The pure monocrystalline silicon is deposited on the back of the silicon wafer, and the mode of carrying out heat treatment on the monocrystalline silicon wafer is as follows: before the temperature is raised, the cleaned monocrystalline silicon piece is placed on a silicon boat, high-purity nitrogen is introduced into the furnace and kept for 15-25 minutes for gas removal, then the silicon boat is slowly heated to 500-700 ℃ and kept for 20-60 minutes, then the temperature is slowly reduced, the monocrystalline silicon piece is taken out, and at the moment, a layer of polycrystalline silicon film is formed on the surface of the monocrystalline silicon piece.
In the second step, in the thermal decomposition process, a polysilicon film is deposited on the monocrystalline silicon wafer after thermal oxidation treatment by using silane as a reaction gas and adopting a chemical vapor deposition method, and the process parameters of the polysilicon film deposited on the monocrystalline silicon wafer after thermal oxidation treatment are as follows: RF power of 100-150W, RF frequency of 13.56MHz, substrate temperature of 500-700 deg.C, cavity pressure of 20-35Pa, and purity of 99.999 vol% SiH 4 Gas 0.8-1.2slm, deposition time 20-60 minutes.
In specific embodiment 2, based on specific embodiment 1, siH is supplied when the flow rate of the intake air in the intake pipe is controlled to 0.8 to 1.2slm during the film formation process 4 Gas for 20-60min in the furnace chamberThe temperature of (A) is controlled in four temperature areas with 640 +/-50 ℃ from top to bottom.
The furnace cavity is sequentially provided with four temperature areas from top to bottom, wherein the four temperature areas are a first temperature area, a second temperature area, a third temperature area and a fourth temperature area respectively;
when the input height of the gas inlet pipe is 15cm away from the furnace mouth, siH as a reaction gas is input 4 The temperatures of the first temperature region, the second temperature region, the third temperature region and the fourth temperature region are 650 ℃, 646 ℃, 640 ℃ and 638 ℃ respectively, and the reaction time is 20-60min. And at the moment, the top pipe orifice of the air inlet pipe is arranged on the seventh silicon wafer placing layer.
When the input height of the gas inlet pipe is 35cm away from the furnace mouth, siH as a reaction gas is input 4 The temperatures of the first temperature region, the second temperature region, the third temperature region and the fourth temperature region are 650 ℃, 646 ℃, 645 ℃ and 647 ℃ respectively, and the reaction time is 20-60min. And the top pipe orifice of the air inlet pipe is arranged on the fifth silicon wafer placing layer.
When the input height of the gas inlet pipe is 57cm away from the furnace mouth, siH as a reaction gas is input 4 The temperatures of the first temperature region, the second temperature region, the third temperature region and the fourth temperature region are respectively 640 ℃, 642 ℃, 648 ℃ and 651 ℃, and the reaction time is 20-60min. And at the moment, the top pipe opening of the air inlet pipe is arranged on the third silicon wafer placing layer.
The concentration of different positions in the furnace cavity tends to be consistent by changing different heights of the air inlet pipe in the furnace cavity. Thereby reducing the temperature difference at different positions in the furnace chamber to reduce the warpage change.
The position of the furnace exit opening is the bottom of the vertical part.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that it is obvious to those skilled in the art that various modifications and improvements can be made without departing from the principle of the present invention, and these modifications and improvements should also be considered as the protection scope of the present invention.
Claims (10)
1. A film forming method for improving warping is characterized in that when a film forming process is carried out through a low-pressure chemical vapor deposition furnace, air is fed from the bottom of a furnace chamber through an air inlet pipe, and the warping rate of a silicon wafer after the film forming process is adjusted by adjusting the length of the air inlet pipe extending into the furnace chamber of the low-pressure chemical vapor deposition furnace.
2. The film forming method for improving warpage as claimed in claim 1, wherein: seven silicon chip placing layers are arranged in the furnace chamber from top to bottom;
the top of the air inlet pipe is positioned between the third layer silicon wafer placing layer and the seventh layer silicon wafer placing layer from top to bottom.
3. The film forming method for improving warpage according to claim 1, wherein: the air inlet pipe is a telescopic pipe.
4. The film forming method for improving warpage as claimed in claim 1, wherein: the gas inlet pipe comprises a vertical part which is vertically arranged and is positioned in the furnace cavity;
the lateral wall of vertical portion has seted up the venthole, the aperture of venthole increases progressively from last to down.
5. The film forming method for improving warpage according to claim 1, wherein: the air inlet pipe is a pipeline made of quartz materials.
6. The film forming method for improving warpage according to claim 1, wherein: when the deposition thickness of the film forming process is 300-1000nm, the film forming process comprises the following steps:
step one, cleaning a monocrystalline silicon wafer;
step two, putting the cleaned monocrystalline silicon wafer on a silicon boat made of SiC material for hot processing, wherein the principle is that SiH is introduced 4 Thermal decomposition of (2) to deposit pure single crystal silicon on the back of the waferThe mode of carrying out heat treatment on the monocrystalline silicon wafer is as follows: before the temperature is raised, the cleaned monocrystalline silicon piece is placed on a silicon boat, nitrogen is introduced into the furnace and kept for 15-25 minutes for gas removal, then the silicon boat is slowly heated to 500-700 ℃ and kept for 20-60 minutes, then the temperature is slowly lowered, the monocrystalline silicon piece is taken out, and at the moment, a layer of polycrystalline silicon film is formed on the surface of the monocrystalline silicon piece.
7. The film forming method for improving warpage according to claim 1, wherein: in the second step, in the thermal decomposition process, a polysilicon film is deposited on the monocrystalline silicon wafer after thermal oxidation treatment by using silane as a reaction gas and adopting a chemical vapor deposition method, and the process parameters of the polysilicon film deposited on the monocrystalline silicon wafer after thermal oxidation treatment are as follows: radio frequency power of 100-150W, radio frequency of 13.56MHz, substrate temperature of 500-700 deg.C, cavity pressure of 20-35Pa, and purity of 99.999% SiH 4 The gas flow is 0.8-1.2slm, and the deposition time is 20-60 minutes.
8. The film forming method for improving warpage according to claim 1, wherein: during the film forming process, when the air inlet flow of the air inlet pipe is controlled to be 0.8-1.2slm, siH is input 4 The gas time is controlled to be 20-60 minutes, and the temperature in the furnace cavity is controlled to be four temperature areas with the temperature of 640 +/-50 ℃ from top to bottom.
9. The film forming method for improving warpage according to claim 1, wherein: the furnace cavity is sequentially provided with four temperature areas from top to bottom, wherein the four temperature areas are a first temperature area, a second temperature area, a third temperature area and a fourth temperature area respectively;
when the input height of the gas inlet pipe is 15cm away from the furnace mouth, siH as a reaction gas is input 4 The temperatures of the first temperature area, the second temperature area, the third temperature area and the fourth temperature area are 650 ℃, 646 ℃, 640 ℃ and 638 ℃ respectively, and the reaction time is 20-60min;
when the input height of the gas inlet pipe is 35cm away from the furnace mouth, siH as a reaction gas is input 4 First, aThe temperature of the temperature area, the temperature of the second temperature area, the temperature of the third temperature area and the temperature of the fourth temperature area are respectively 650 ℃, 646 ℃, 645 ℃ and 647 ℃, and the reaction time is 20-60min;
when the input height of the gas inlet pipe is 57cm away from the furnace mouth, siH as a reaction gas is input 4 The temperatures of the first temperature zone, the second temperature zone, the third temperature zone and the fourth temperature zone are respectively 640 ℃, 642 ℃, 648 ℃ and 651 ℃, and the reaction time is 20-60min.
10. The film forming method for improving warpage as claimed in claim 1, wherein: after film formation, the warpage change rate of the silicon wafer is controlled to be equal to or less than 15.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211251913.1A CN115613007A (en) | 2022-10-13 | 2022-10-13 | Film forming method for improving warping |
| PCT/CN2023/081612 WO2024077865A1 (en) | 2022-10-13 | 2023-03-15 | Film forming method for alleviating warping |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211251913.1A CN115613007A (en) | 2022-10-13 | 2022-10-13 | Film forming method for improving warping |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115613007A true CN115613007A (en) | 2023-01-17 |
Family
ID=84861705
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211251913.1A Pending CN115613007A (en) | 2022-10-13 | 2022-10-13 | Film forming method for improving warping |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN115613007A (en) |
| WO (1) | WO2024077865A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024077865A1 (en) * | 2022-10-13 | 2024-04-18 | 上海中欣晶圆半导体科技有限公司 | Film forming method for alleviating warping |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3900597A (en) * | 1973-12-19 | 1975-08-19 | Motorola Inc | System and process for deposition of polycrystalline silicon with silane in vacuum |
| US4742020A (en) * | 1985-02-01 | 1988-05-03 | American Telephone And Telegraph Company, At&T Bell Laboratories | Multilayering process for stress accommodation in deposited polysilicon |
| KR940010183A (en) * | 1992-10-24 | 1994-05-24 | 황철주 | Plasma low pressure chemical vapor deposition method and apparatus therefor |
| JPH06289239A (en) * | 1993-03-31 | 1994-10-18 | Sumitomo Cement Co Ltd | Optical waveguide type optical element chip which has warpage deformation and is subjected to light phase adjustment |
| JP2001102386A (en) * | 1999-10-01 | 2001-04-13 | Toshiba Ceramics Co Ltd | Munufacturing method of semiconductor wafer |
| JP2006249495A (en) * | 2005-03-10 | 2006-09-21 | Jfe Steel Kk | Method for producing grain-oriented silicon steel sheet strip with ceramics film in excellent in steel sheet shape |
| US20140061867A1 (en) * | 2011-04-04 | 2014-03-06 | Okmetic Oyj | Method for depositing one or more polycrystalline silicon layers on substrate |
| WO2017042862A1 (en) * | 2015-09-07 | 2017-03-16 | 三菱電機株式会社 | Solar cell manufacturing method and solar cell |
| CN206887226U (en) * | 2017-06-29 | 2018-01-16 | 苏州工业园区纳米产业技术研究院有限公司 | Reacting furnace |
| CN109300777A (en) * | 2018-09-25 | 2019-02-01 | 上海申和热磁电子有限公司 | A kind of chemical vapor deposition method improving silicon wafer polysilicon membrane warpage |
| CN110257908A (en) * | 2019-05-28 | 2019-09-20 | 天津中环领先材料技术有限公司 | A kind of polysilicon membrane preparation process |
| CN111270220A (en) * | 2020-03-27 | 2020-06-12 | 上海华力微电子有限公司 | Chemical vapor deposition apparatus and method of adjusting the same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103663457B (en) * | 2013-11-29 | 2016-01-27 | 上海华力微电子有限公司 | Reactor for polycrystalline silicon |
| CN111223761B (en) * | 2020-01-14 | 2022-11-25 | 北京大学 | Method for improving quality of deposited polycrystalline silicon surface particles |
| CN111834257B (en) * | 2020-06-11 | 2021-06-04 | 长江存储科技有限责任公司 | Air inlet device of furnace tube and furnace tube structure thereof |
| CN115613007A (en) * | 2022-10-13 | 2023-01-17 | 上海中欣晶圆半导体科技有限公司 | Film forming method for improving warping |
-
2022
- 2022-10-13 CN CN202211251913.1A patent/CN115613007A/en active Pending
-
2023
- 2023-03-15 WO PCT/CN2023/081612 patent/WO2024077865A1/en unknown
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3900597A (en) * | 1973-12-19 | 1975-08-19 | Motorola Inc | System and process for deposition of polycrystalline silicon with silane in vacuum |
| US4742020A (en) * | 1985-02-01 | 1988-05-03 | American Telephone And Telegraph Company, At&T Bell Laboratories | Multilayering process for stress accommodation in deposited polysilicon |
| KR940010183A (en) * | 1992-10-24 | 1994-05-24 | 황철주 | Plasma low pressure chemical vapor deposition method and apparatus therefor |
| JPH06289239A (en) * | 1993-03-31 | 1994-10-18 | Sumitomo Cement Co Ltd | Optical waveguide type optical element chip which has warpage deformation and is subjected to light phase adjustment |
| JP2001102386A (en) * | 1999-10-01 | 2001-04-13 | Toshiba Ceramics Co Ltd | Munufacturing method of semiconductor wafer |
| JP2006249495A (en) * | 2005-03-10 | 2006-09-21 | Jfe Steel Kk | Method for producing grain-oriented silicon steel sheet strip with ceramics film in excellent in steel sheet shape |
| US20140061867A1 (en) * | 2011-04-04 | 2014-03-06 | Okmetic Oyj | Method for depositing one or more polycrystalline silicon layers on substrate |
| WO2017042862A1 (en) * | 2015-09-07 | 2017-03-16 | 三菱電機株式会社 | Solar cell manufacturing method and solar cell |
| CN206887226U (en) * | 2017-06-29 | 2018-01-16 | 苏州工业园区纳米产业技术研究院有限公司 | Reacting furnace |
| CN109300777A (en) * | 2018-09-25 | 2019-02-01 | 上海申和热磁电子有限公司 | A kind of chemical vapor deposition method improving silicon wafer polysilicon membrane warpage |
| CN110257908A (en) * | 2019-05-28 | 2019-09-20 | 天津中环领先材料技术有限公司 | A kind of polysilicon membrane preparation process |
| CN111270220A (en) * | 2020-03-27 | 2020-06-12 | 上海华力微电子有限公司 | Chemical vapor deposition apparatus and method of adjusting the same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024077865A1 (en) * | 2022-10-13 | 2024-04-18 | 上海中欣晶圆半导体科技有限公司 | Film forming method for alleviating warping |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024077865A1 (en) | 2024-04-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8652258B2 (en) | Substrate treatment device | |
| JP5848832B2 (en) | Substrate processing apparatus including a heat shield plate | |
| JP2014534644A (en) | Substrate processing apparatus including auxiliary gas supply port | |
| KR100996689B1 (en) | Manufacturing method of semiconductor apparatus, film forming method and substrate processing apparatus | |
| JPH01301589A (en) | Epitaxial growth of silicon | |
| CN115613007A (en) | Film forming method for improving warping | |
| JP2014533442A (en) | Substrate processing apparatus including a plurality of exhaust ports and method thereof | |
| CN107574422A (en) | Semiconductor production equipment and its cleaning method | |
| KR100561120B1 (en) | Heating system and method for heating an atmospheric reactor | |
| WO2022116481A1 (en) | Furnace tube-based deposition method for thin film and semiconductor device | |
| JP2001156063A (en) | Method and apparatus for manufacturing semiconductor device | |
| JP2003045811A (en) | Method for manufacturing semiconductor device and wafer processing system | |
| JPS6228569B2 (en) | ||
| JPS62214614A (en) | Reduced pressure cvd device | |
| JPH01157519A (en) | Vapor growth apparatus | |
| JPS6010621A (en) | Depressurized epitaxial growing equipment | |
| JP3100702B2 (en) | Reduced pressure chemical reaction method and apparatus | |
| WO2024139073A1 (en) | Epitaxial wafer fabrication device, and epitaxial wafer fabrication method and apparatus | |
| JPH1050613A (en) | Epitaxial growth device | |
| JP2003183837A (en) | Semiconductor device manufacturing process and substrate treating device | |
| JP2004095940A (en) | Method of manufacturing semiconductor device | |
| JPH06302566A (en) | Method and apparatus for manufacturing semiconductor device | |
| CN110184652A (en) | A kind of chemical vapor deposition unit and method improving silicon warp degree | |
| TWI275134B (en) | Atmospheric pressure chemical vapor deposition reactor | |
| CN116815310A (en) | Method for improving thickness of SiC epitaxial layer and uniformity of carrier concentration |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |