CN110184652A - A kind of chemical vapor deposition unit and method improving silicon warp degree - Google Patents
A kind of chemical vapor deposition unit and method improving silicon warp degree Download PDFInfo
- Publication number
- CN110184652A CN110184652A CN201910432382.8A CN201910432382A CN110184652A CN 110184652 A CN110184652 A CN 110184652A CN 201910432382 A CN201910432382 A CN 201910432382A CN 110184652 A CN110184652 A CN 110184652A
- Authority
- CN
- China
- Prior art keywords
- gas
- admission line
- vapor deposition
- chemical vapor
- reaction chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
- C30B28/14—Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a kind of chemical vapor deposition units and method for improving silicon warp degree, original individual inlet charge mode is changed to the air inlet pipe while intake method by 5 different heights, the polycrystal layer uniformity between product can be controlled well, the problem of rear angularity significantly increases largely is improved again, substantially increases production capacity and yield.
Description
Technical field
The present invention relates to a kind of device and method of growth structure layer polysilicon, and in particular to a kind of improvement silicon warp degree
Chemical vapor deposition unit and method.
Background technique
The method of growth structure layer polysilicon is mainly low-pressure chemical vapor deposition at present, and stand-type polycrystalline furnace is wide
General one of CVD (chemical vapor deposition) equipment for deposit polycrystalline silicon.Chemical vapor deposition is a kind of Chemical Engineering Technology, the technology
Mainly using one or more of gas phase compounds or simple substance containing film element, carry out chemical reaction life on the surface of a substrate
At the method for film.
As shown in Figure 1, the working principle of existing stand-type polycrystalline furnace is to lead to certain reaction using individual air inlet
Gas, pyrolytic is at polysilicon.The reaction chamber of single reaction gas air inlet needs to control to guarantee the uniformity between piece
Make suitable temperature gradient.But after having grown structure sheaf polysilicon, the angularity of product can deteriorate；By temperature ladder when reaction
The influence of degree, after product has grown polycrystalline, angularity incrementss are also that gradient phenomenon is presented: since reaction chamber top slowly
Toward bottom, angularity incrementss are changed from small to big.
It in the prior art, can be uniform by controlling the polycrystal layer that suitable temperature gradient can be controlled very well between product
The problem of property, but after cannot controlling well and having grown polycrystalline, product angularity can obviously become larger.
The undesirable product of angularity is directly to make waste treatment, in order to guarantee that yield, every BATCH (furnace) product put into number,
The 17% of the full BATCH maximum input amount of deficiency, production capacity critical constraints, reaction gas dosage also increases.
Summary of the invention
In view of the problems of the existing technology, the present invention provides a kind of chemical vapor deposition unit for improving silicon warp degree
And method, original individual inlet charge mode is changed to the air inlet pipe while intake method by 5 different heights, it can
Polycrystal layer uniformity between control product well, but largely improve that rear angularity significantly increases asks
Topic, substantially increases production capacity and yield.
The technical scheme is that a kind of chemical vapor deposition unit for improving silicon warp degree, the chemical gaseous phase
Precipitation equipment is stand-type polycrystalline furnace, and the stand-type polycrystalline furnace includes the gas reaction chamber on the inside of outer barrel and outer barrel；
The stand-type polycrystalline furnace further includes more admission lines, and the air inlet of the admission line is located at outside outer barrel
Side, admission line pass through outer barrel and the gas outlet of admission line are extended in gas reaction chamber；And the more air inlets
The gas outlet of pipeline extends respectively at the indoor different height of gas reaction chamber；
The stand-type polycrystalline furnace further includes an outlet pipe, is opened up below described outlet pipe one end and outer barrel
Outlet connection, one end extends to outside.
Further, the admission line has 5, the height difference settings such as gas outlet of 5 admission lines, highest air inlet
The gas outlet of pipeline extends in the middle part of gas reaction chamber, and the gas outlet of minimum admission line extends to gas reaction chamber
At a quarter height.
Further, more admission lines are inserted into from outer barrel sidewall bottom so that the gas outlet of admission line extends to
In gas reaction chamber.
The present invention also provides stuck up according to a kind of improvement silicon wafer that the chemical vapor deposition unit for improving silicon warp degree is realized
The chemical vapor deposition method of curvature, the specific steps are as follows:
Step 1: silicon wafer is entered gas reaction chamber；
Step 2: being passed through silane, total gas flow rate 0.59/0.665SLM/min, gas simultaneously from more admission lines
Reaction chamber room temperature is 664 ± 9 DEG C, and the reaction time is 41min~82min；
Step 3: in step 2 after the reaction was completed, by silicon chip extracting gas reaction chamber.
Further, be put into step 1 gas reaction chamber silicon wafer investment number be expire furnace maximum input amount 34%~
100%.
Further, there are 5 admission lines in step 2, the gas flow of the highest admission line in gas outlet is 0.140/
0SLM/min, the gas flow of the high admission line in gas outlet second are 0.09/0.130SLM/min, gas outlet third it is high into
The gas flow of feed channel is 0.125/0.130SLM/min, and the gas flow of the high admission line in gas outlet the 4th is 0.120/
0.140SLM/min, the gas flow of the minimum admission line in gas outlet are 0.190/0.190SLM/min.
The beneficial effects of the present invention are: a kind of chemical vapor deposition unit and method for improving silicon warp degree is provided, it will
Individual inlet charge mode originally is changed to air inlet pipe while intake method by 5 different heights, can control well
Polycrystal layer uniformity between silicon wafer processed, and the problem of rear angularity significantly increases largely is improved, it mentions significantly
High production capacity and yield.
Former every BATCH (furnace) silicon wafer investment number, the 17% of the full BATCH maximum input amount of deficiency, production capacity critical constraints use
The method of the present invention growth structure layer polysilicon, every BATCH silicon wafer investment number are the > 34% of full BATCH maximum input amount, greatly
Improve production capacity, and in the case where the same output value, used using method growth structure layer polysilicon reaction gas of the invention
Amount greatly reduces.
Detailed description of the invention
Fig. 1 is the structural schematic diagram that stand-type polycrystalline furnace utilizes individual inlet charge in the prior art；
Fig. 2 is that the present invention is changed to by the stand-type polycrystalline furnace structural schematic diagram of the air inlet pipe air inlet simultaneously of 5 different heights；
Fig. 3 is that the air inlet pipe bottom air inlet of 5 different heights is located at the schematic diagram in same level；
Fig. 4 is 5 air inlet pipe high-level schematics；In figure, corresponding first admission line of air inlet 1, air inlet 2 corresponding second
Admission line, the corresponding third admission line of air inlet 3, corresponding 4th admission line of air inlet 4, corresponding 5th air inlet of air inlet 5
Pipeline,
Fig. 5 is the comparison diagram before improving with product angularity incrementss after improvement；
Fig. 6 is to improve polycrystalline the thickness uniformity comparison diagram after preceding and improvement.
In figure: 1 is outer barrel, and 3 be gas reaction chamber, and 4 be single admission line, and 5 be outlet pipe, and 6 be the first air inlet
Pipeline, 7 be the second admission line, and 8 be third admission line, and 9 be the 4th admission line, and 10 be the 5th admission line.
Specific embodiment
Following further describes the present invention with reference to the drawings.
As shown in Fig. 2, a kind of chemical vapor deposition unit for improving silicon warp degree, chemical vapor deposition unit is to stand
Formula polycrystalline furnace, stand-type polycrystalline furnace include the gas reaction chamber 3 of 1 inside of outer barrel 1 and outer barrel.Stand-type polycrystalline furnace also wraps
More admission lines are included, the air inlet of admission line is located at 1 outside of outer barrel, and admission line passes through outer barrel 1 and makes air inlet pipe
The gas outlet in road extends in gas reaction chamber 3.And the gas outlet of more admission lines extends respectively to gas reaction chamber 3
At interior different height.Stand-type polycrystalline furnace further includes an outlet pipe 5, is opened up below 5 one end of outlet pipe and outer barrel 1
Outlet connection, one end extends to outside.
As shown in Figure 3,4, prolong the gas outlet of the height difference settings such as gas outlet of 5 admission lines, highest admission line 6
3 middle part of gas reaction chamber is extended to, a quarter that the gas outlet of minimum admission line 10 extends to gas reaction chamber 3 is high
At degree.Difference in height in the present embodiment, between the gas outlet of highest admission line 6 and the gas outlet of minimum admission line 10
For 748.8mm, the difference in height of the gas outlet of two neighboring admission line 6 is 187.2mm, i.e., about sets one every 30 pieces of products
Air inlet.
Improve the chemical vapor deposition method of silicon warp degree, the specific steps are as follows:
Step 1: entering gas reaction chamber for silicon wafer is produced；The silicon wafer investment number for being put into gas reaction chamber is that full furnace is maximum
The 34%~100% of input amount.
Step 2: being passed through silane simultaneously from 5 admission lines, the gas flow of the highest admission line in gas outlet is
0.140/0SLM/min, the gas flow of the high admission line in gas outlet second are 0.09/0.130SLM/min, gas outlet third
The gas flow of high admission line is 0.125/0.130SLM/min, and the gas flow of the high admission line in gas outlet the 4th is
0.120/0.140SLM/min, the gas flow of the minimum admission line in gas outlet is 0.190/0.190SLM/min.Control gas
Precursor reactant chamber room temperature is 664 ± 9 DEG C, and the reaction time is 41min~82min.
Step 3: in step 2 after the reaction was completed, by silicon chip extracting gas reaction chamber.It is periodically clear to admission line
Reason.
It is illustrated in figure 5 the comparison diagram before improving with silicon warp degree incrementss after improvement, angularity incrementss obtain
Control well；Fig. 6 is shown before improvement and polycrystalline the thickness uniformity comparison diagram, the control of polycrystalline layer thickness homogeneity after improving
It is preceding quite with transformation.
Original individual inlet charge mode is changed to air inlet pipe while air inlet side by 5 different heights by the present invention
Formula, can control the polycrystal layer uniformity between silicon wafer well and improve rear angularity and obviously increase
Big problem, substantially increases production capacity and yield.
The above is only the preferred embodiment of the present invention, it is noted that those skilled in the art are come
It says, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (6)
1. a kind of chemical vapor deposition unit for improving silicon warp degree, it is characterised in that: the chemical vapor deposition unit is
Stand-type polycrystalline furnace, the stand-type polycrystalline furnace include the gas reaction chamber (3) on the inside of outer barrel (1) and outer barrel (1)；
The stand-type polycrystalline furnace further includes more admission lines, and the air inlet of the admission line is located on the outside of outer barrel (1),
Admission line passes through outer barrel (1) and the gas outlet of admission line is extended in gas reaction chamber (3)；And described more into
The gas outlet of feed channel extends respectively at the different height in gas reaction chamber (3)；
The stand-type polycrystalline furnace further includes an outlet pipe (5), described outlet pipe (5) one end and outer barrel (1) lower section
The outlet connection opened up, one end extends to outside.
2. a kind of chemical vapor deposition unit for improving silicon warp degree according to claim 1, it is characterised in that: described
Admission line has 5, and the gas outlet of the height difference settings such as gas outlet of 5 admission lines, highest admission line (6) extends to
In the middle part of gas reaction chamber (3), the gas outlet of minimum admission line (10) extends to a quarter of gas reaction chamber (3)
At height.
3. a kind of chemical vapor deposition unit for improving silicon warp degree according to claim 1 or 2, it is characterised in that:
More admission lines are inserted into from outer barrel (1) sidewall bottom so that the gas outlet of admission line extends to gas reaction chamber
(3) in.
4. the improvement that a kind of chemical vapor deposition unit for improving silicon warp degree according to claim 1 to 3 is realized
The chemical vapor deposition method of silicon warp degree, it is characterised in that: specific step is as follows:
Step 1: silicon wafer is entered gas reaction chamber；
Step 2: being passed through silane, total gas flow rate 0.59/0.665SLM/min, gas reaction simultaneously from more admission lines
Chamber room temperature is 664 ± 9 DEG C, and the reaction time is 41min~82min；
Step 3: in step 2 after the reaction was completed, by silicon chip extracting gas reaction chamber.
5. a kind of chemical vapor deposition method for improving silicon warp degree according to claim 4, it is characterised in that: step
The silicon wafer investment number that gas reaction chamber is put into one is the 34%~100% of full furnace maximum input amount.
6. a kind of chemical vapor deposition method for improving silicon warp degree according to claim 4, it is characterised in that: step
There are 5 admission lines in two, the gas flow of the highest admission line in gas outlet is 0.140/0 SLM/min, gas outlet second
The gas flow of high admission line is 0.09/0.130 SLM/min, and the gas flow of the high admission line of gas outlet third is
0.125/0.130 SLM/min, the gas flow of the high admission line in gas outlet the 4th are 0.120/0.140 SLM/min, out
The gas flow of the minimum admission line of port is 0.190/0.190 SLM/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910432382.8A CN110184652A (en) | 2019-05-23 | 2019-05-23 | A kind of chemical vapor deposition unit and method improving silicon warp degree |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910432382.8A CN110184652A (en) | 2019-05-23 | 2019-05-23 | A kind of chemical vapor deposition unit and method improving silicon warp degree |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110184652A true CN110184652A (en) | 2019-08-30 |
Family
ID=67717497
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910432382.8A Pending CN110184652A (en) | 2019-05-23 | 2019-05-23 | A kind of chemical vapor deposition unit and method improving silicon warp degree |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110184652A (en) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW392212B (en) * | 1998-09-21 | 2000-06-01 | Mosel Vitelic Inc | Low pressure silicon nitrides deposition method that can reduce particle production |
| CN101956183A (en) * | 2010-10-12 | 2011-01-26 | 上海宏力半导体制造有限公司 | Chemical vapor deposition furnace |
| CN103060774A (en) * | 2011-10-24 | 2013-04-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Chamber device and substrate processing equipment with same |
| CN103165497A (en) * | 2013-02-20 | 2013-06-19 | 上海华力微电子有限公司 | Oxidation reacting furnace and method utilizing the same to conduct oxidizing reaction |
| CN103663457A (en) * | 2013-11-29 | 2014-03-26 | 上海华力微电子有限公司 | Polycrystalline silicon reaction furnace |
| CN203871351U (en) * | 2014-05-16 | 2014-10-08 | 中国东方电气集团有限公司 | Structure capable of diffusing reaction gas of boron diffusion furnace uniformly |
| CN104233221A (en) * | 2014-09-17 | 2014-12-24 | 湖南顶立科技有限公司 | Chemical vapor deposition equipment and method for silicon carbide |
| CN105543955A (en) * | 2016-02-26 | 2016-05-04 | 上海华力微电子有限公司 | Vertical furnace pipe prepared from polysilicon and preparation method thereof |
| CN109244010A (en) * | 2018-09-03 | 2019-01-18 | 武汉新芯集成电路制造有限公司 | A kind of high-temperature thermal oxidation bench structure |
| CN109300777A (en) * | 2018-09-25 | 2019-02-01 | 上海申和热磁电子有限公司 | A kind of chemical vapor deposition method improving silicon wafer polysilicon membrane warpage |
-
2019
- 2019-05-23 CN CN201910432382.8A patent/CN110184652A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW392212B (en) * | 1998-09-21 | 2000-06-01 | Mosel Vitelic Inc | Low pressure silicon nitrides deposition method that can reduce particle production |
| CN101956183A (en) * | 2010-10-12 | 2011-01-26 | 上海宏力半导体制造有限公司 | Chemical vapor deposition furnace |
| CN103060774A (en) * | 2011-10-24 | 2013-04-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Chamber device and substrate processing equipment with same |
| CN103165497A (en) * | 2013-02-20 | 2013-06-19 | 上海华力微电子有限公司 | Oxidation reacting furnace and method utilizing the same to conduct oxidizing reaction |
| CN103663457A (en) * | 2013-11-29 | 2014-03-26 | 上海华力微电子有限公司 | Polycrystalline silicon reaction furnace |
| CN203871351U (en) * | 2014-05-16 | 2014-10-08 | 中国东方电气集团有限公司 | Structure capable of diffusing reaction gas of boron diffusion furnace uniformly |
| CN104233221A (en) * | 2014-09-17 | 2014-12-24 | 湖南顶立科技有限公司 | Chemical vapor deposition equipment and method for silicon carbide |
| CN105543955A (en) * | 2016-02-26 | 2016-05-04 | 上海华力微电子有限公司 | Vertical furnace pipe prepared from polysilicon and preparation method thereof |
| CN109244010A (en) * | 2018-09-03 | 2019-01-18 | 武汉新芯集成电路制造有限公司 | A kind of high-temperature thermal oxidation bench structure |
| CN109300777A (en) * | 2018-09-25 | 2019-02-01 | 上海申和热磁电子有限公司 | A kind of chemical vapor deposition method improving silicon wafer polysilicon membrane warpage |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8652258B2 (en) | Substrate treatment device | |
| CN100537836C (en) | The cleaning method of CVD (Chemical Vapor Deposition) chamber | |
| JP5719282B2 (en) | Method for producing polycrystalline silicon | |
| CN102597307B (en) | CVD method and CVD reactor | |
| CN102203910A (en) | Reaction chamber | |
| JP2867306B2 (en) | Method and apparatus for producing semiconductor grade polycrystalline silicon | |
| CN101812724B (en) | Silicon film formation apparatus and method for using same | |
| CN104681467B (en) | Support structure and processing unit | |
| JPS62271418A (en) | Manufacture of amorphous silicon semiconductor element | |
| US20140106577A1 (en) | Method and apparatus of forming silicon nitride film | |
| CN110335901A (en) | Photovoltaic cell surface passivation system and passivating method | |
| CN100387525C (en) | Equipment and technique for fabricating large size CVD ZnS material in high evenness | |
| CN103165497B (en) | One kinds of oxidation reaction stove and utilize this reacting furnace to carry out the method for oxidation reaction | |
| JP2017098534A (en) | Substrate processing apparatus and substrate processing method using the same | |
| CN115094521B (en) | Boron diffusion reaction system and process method thereof | |
| CN111286724A (en) | Intrinsic silicon horizontal coating process method based on LPCVD technology | |
| CN200988773Y (en) | Device for preparing high optic uniformity CVDZnS ball cover | |
| CN205556772U (en) | Chemical vapor deposition is graphite deposition apparatus for stove | |
| CN110184652A (en) | A kind of chemical vapor deposition unit and method improving silicon warp degree | |
| WO2024077865A1 (en) | Film forming method for alleviating warping | |
| CN102051601B (en) | Thin film deposition method | |
| CN105420686A (en) | Graphite depositing device for chemical vapor deposition furnace | |
| JP3345929B2 (en) | Semiconductor grade polycrystalline silicon production reactor | |
| CN108179468A (en) | A kind of device and method for the deposit of silicon substrate polysilicon membrane | |
| CN104152869A (en) | Plasma thin film deposition device and deposition method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20210208 Address after: 200444 Building 1, 181 Shanlian Road, Baoshan District, Shanghai Applicant after: Shanghai Zhongxin wafer semiconductor technology Co.,Ltd. Address before: 200444, No. 181, Lian Lian Road, Baoshan City Industrial Park, Shanghai, Baoshan District Applicant before: SHANGHAI SHENHE THERMO-MAGNETICS ELECTRONICS Co.,Ltd. |
|
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190830 |