CN103060774A - Chamber device and substrate processing equipment with same - Google Patents
Chamber device and substrate processing equipment with same Download PDFInfo
- Publication number
- CN103060774A CN103060774A CN2011103276876A CN201110327687A CN103060774A CN 103060774 A CN103060774 A CN 103060774A CN 2011103276876 A CN2011103276876 A CN 2011103276876A CN 201110327687 A CN201110327687 A CN 201110327687A CN 103060774 A CN103060774 A CN 103060774A
- Authority
- CN
- China
- Prior art keywords
- chamber device
- chamber
- multiple layer
- layer tray
- pallet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
The invention provides a chamber device which comprises a chamber body, a plurality of tray layers and a fan-shaped air inlet pipeline, wherein chambers are defined in the chamber body; the plurality of tray layers are arranged inside the chambers at intervals along the vertical direction; the plurality of tray layers are fixedly connected through vertically arranged support pieces and the support pieces can be driven to rotate; the trays are respectively used for holding substrates; and the fan-shaped air inlet pipeline is arranged inside the chambers and is used for ejecting process gas to at least one part of the substrates held on the tray layers. According to the substrate processing equipment provided by the invention, radial temperature difference of the trays is effectively reduced, and the uniformity of a temperature field is ensured, so that the substrates are uniformly heated, and the processing efficiency is high. The invention further provides the substrate processing equipment with the chamber device.
Description
Technical field
The present invention relates to the micro-electronic device technical field, the substrate processing equipment that especially relates to a kind of improved chamber device and have this chamber device.
Background technology
Metal organic chemical compound vapor deposition (MOCVD) is that the organometallics that utilizes that grows up the sixties in 20th century carries out a kind of compound semiconductor vapour phase epitaxy new technology that metal transports, this technology can accurately be controlled thickness and the component of epitaxial film on nanoscale, and be applicable to batch production, now become the main means of production of photoelectric device.
In MOCVD equipment, reaction chamber is its most crucial parts, also is most active field in the MOCVD equipment design.In order to grow the epitaxial wafer of high-quality, each equipment vendors and research worker have launched a large amount of research in the design of reaction chamber structure, also design the reaction chamber of a variety of different structures simultaneously.Mainly comprise at present horizontal reaction chamber and rectilinear reaction chamber.
Majority is placed with one deck pallet in reaction chamber inside in traditional MOCVD equipment, treatment substrate efficient is low, even part placement of multiple layers pallet in reaction chamber is arranged, but the heating to multiple layer tray is difficult to control, cause the tray surface non-uniform temperature, the radial temperature difference that is pallet is large, can not guarantee thus the homogeneity in the temperature field of pallet.
Summary of the invention
The present invention is intended to one of solve the problems of the technologies described above at least.
For this reason, one object of the present invention is to provide chamber device, can reduce the calorific loss of pallet and the temperature field of tray surface and distribute more even in described chamber device.
Another object of the present invention is to propose a kind of substrate processing equipment with above-mentioned chamber device.
For achieving the above object, the chamber device of embodiment according to a first aspect of the invention comprises: chamber body is limited with chamber in the described chamber body; Multiple layer tray, described multiple layer tray is located in the described chamber along the vertical direction compartment of terrain, described multiple layer tray is fixedly connected with and rotates by driving the described pallet of described strut member rotation drive by the strut member of vertical setting, and described multiple layer tray is respectively applied to carrying substrates; And admission passage, described admission passage is positioned at chamber and is arranged on a side of described multiple layer tray, is used at least a portion spray technology gas to the substrate that is carried on described multiple layer tray.
Chamber device according to the embodiment of the invention, by adopting admission passage from a side air inlet of chamber, the opposite side mode of giving vent to anger correspondingly, can avoid the temperature leak problem that is used for air inlet or gives vent to anger and bring at pallet middle portion borehole, and then dwindle radial temperature difference on the pallet, guaranteed the homogeneity in temperature field.Thus, the substrate heating that is arranged on the pallet is even, and processing efficiency is high, has satisfied thus the processing requirement that substrate is made.
In addition, chamber device according to the above embodiment of the present invention can also have following additional technical characterictic:
In one embodiment of the invention, described chamber device further comprises: the indirect heating source, described indirect heating source arranges around described chamber body periphery.Thus, can heat multiple layer tray.
In one embodiment of the invention, described indirect heating source is ruhmkorff coil.
In one embodiment of the invention, described chamber device further comprises: drive-motor, described drive-motor is used for driving the uniform rotation of described strut member uniaxially.
In one embodiment of the invention, described admission passage is made by quartz.
In one embodiment of the invention, described admission passage is fan-shaped and becomes towards the even spray technology gas in substrate level ground that is carried on the described multiple layer tray.
According to one embodiment of present invention, the fan-shaped curvature of described admission passage identical with the curvature of described multiple layer tray and with described multiple layer tray interval predetermined distance, described fan-shaped chord length is arranged so that the process gas of described admission passage horizontal-jet covers the substrate that is arranged on described each pallet.
Thus, the identical admission passage that guaranteed of curvature can be contained between pallet and the chamber more adaptedly.Fan-shaped chord length is arranged to cover each substrate simultaneously, has guaranteed that gas is more even on each substrate, and then improves the film-formation result of substrate.Thus, guarantee that the airflow field on the pallet is more even, further improve the temperature homogeneity of pallet.
In one embodiment of the invention, described chamber device further comprises: exhaust channel, and described exhaust channel and described admission passage are oppositely arranged, and are used for getting rid of process gas; And vacuum pump, described vacuum pump is connected to described exhaust channel.
Thus, the mobile distance of gas between admission passage and exhaust channel is maximum, thereby has prolonged the duration of contact of gas and substrate, and has effectively improved gas effciency.
In one embodiment of the invention, described pallet is formed by graphite or alloy.
In one embodiment of the invention, the main part of described pallet is formed by quartz, and the part that contacts with substrate is formed by graphite or alloy.
According to second aspect present invention, a kind of substrate processing equipment is provided, this substrate processing equipment comprises according to the chamber device described in the first aspect present invention embodiment.
In one embodiment of the invention, described substrate processing equipment is chemical vapor depsotition equipment.
Additional aspect of the present invention and advantage in the following description part provide, and part will become obviously from the following description, or recognize by practice of the present invention.
Description of drawings
Above-mentioned and/or additional aspect of the present invention and advantage are from obviously and easily understanding becoming the description of embodiment in conjunction with following accompanying drawing, wherein:
Fig. 1 is the structural representation of chamber device according to an embodiment of the invention; And
Fig. 2 is that the chamber device shown in Fig. 1 is along the sectional view of A-A direction.
Embodiment
The below describes embodiments of the invention in detail, and the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or the element with identical or similar functions from start to finish.Be exemplary below by the embodiment that is described with reference to the drawings, only be used for explaining the present invention, and can not be interpreted as limitation of the present invention.
In description of the invention, it will be appreciated that, term " " center "; " vertically "; " laterally "; " on "; D score; " front ", " afterwards ", " left side ", " right side ", " vertically ", " level ", " top ", " end ", " interior ", orientation or the position relationship of indications such as " outward " are based on orientation shown in the drawings or position relationship, only be for convenience of description the present invention and simplified characterization, rather than device or the element of indication or hint indication must have specific orientation, with specific orientation structure and operation, therefore can not be interpreted as limitation of the present invention.
In addition, term " first ", " second " only are used for describing purpose, and can not be interpreted as indication or hint relative importance.
In description of the invention, need to prove, unless clear and definite regulation and restriction are arranged in addition, term " installation ", " linking to each other ", " connection " should be done broad understanding, for example, can be to be fixedly connected with, connect integratedly, also can be to removably connect; Can be mechanical connection or electrical connection, also can be the connection of two element internals; Can be directly to link to each other, also can indirectly link to each other by intermediary, for the ordinary skill in the art, can understand as the case may be the concrete meaning of above-mentioned term.
Below in conjunction with Fig. 1-2 chamber device according to the embodiment of the invention is described at first.
As shown in Figure 1, the chamber device according to the embodiment of the invention comprises chamber body 100, multiple layer tray 120 and admission passage 150.Be limited with chamber 110 in the chamber body 100.Multiple layer tray 120 is located in the described chamber 110 along the vertical direction compartment of terrain, described multiple layer tray 120 is fixedly connected with and rotates by driving the described pallet of described strut member 130 rotation drives by the strut member 130 of vertical setting, and described multiple layer tray 120 is respectively applied to carrying substrates 140.Admission passage 150 is arranged in the chamber 110 and is arranged on a side of multiple layer tray 120, be used at least a portion spray technology gas (such as gases such as NH3, PH3 and AsH3) to the substrate 140 that is carried on described multiple layer tray 120, offer breather line and cause the temperature of pallet to become inhomogeneous at the pallet middle portion avoiding.
As shown in Figure 1, the admission passage 150 that arranges by the left side in the chamber 110 of chamber body 100 is to chamber 110 interior input process gass, and process gas flows to the right side of pallet along the surface of pallet 120.Then, process gas and reacted byproduct of reaction gas etc. are discharged from from the bottom righthand side of chamber.
As shown in Figure 1, chamber device also comprises indirect heating source 160, and indirect heating source 160 arranges around described chamber body 100 peripheries 111.Can heat multiple layer tray thus.Advantageously, described indirect heating source 160 is ruhmkorff coil.In ruhmkorff coil 160, pass into medium frequency alternating current, between 1KHz-20KHz, inducing the alternation eddy current at pallet 120, thereby play the effect of heated tray 120 such as frequency.
In one embodiment of the invention, in conjunction with Fig. 1, chamber device also comprises the drive-motor (not shown), and drive-motor is used for driving described strut member 130 uniaxially uniform rotation.Guarantee that thus the airflow field on the pallet 120 is more even, further improve the temperature homogeneity of pallet 120, improve the technological effect of equipment.
As shown in Figure 2, admission passage 150 is fan-shaped and towards the substrate 140 even spray technology gas flatly that is carried on the described multiple layer tray 120.More even when process gas is flowed through substrate 140 thus, the quality of forming film of raising substrate 140.
Further, in conjunction with Fig. 2, the fan-shaped curvature of admission passage 150 identical with the curvature of described multiple layer tray 120 and with described multiple layer tray 120 interval predetermined distances, above-mentioned predetermined distance can be adjusted according to arts demand, neither have influence on the rotation of pallet 120, can guarantee that again the top of process gas level input pallet 120 gets final product.Advantageously, fan-shaped chord length is arranged so that the process gas of described admission passage 150 horizontal-jets covers the substrate 140 that is arranged on described each pallet 120.Chord length d shown in dotted line fan-shaped among Fig. 2, apparently, the process gas of admission passage 150 along continuous straight runs (shown in the horizontal arrow) input on the whole length of chord length d can cover each substrate 140 on the pallet 120.Thus, guarantee that the airflow field on the pallet 120 is more even, further improve the temperature homogeneity of pallet 120.
In addition, the identical admission passage 150 that guaranteed of curvature can be contained between pallet 120 and the chamber 110 more adaptedly.Fan-shaped chord length d is arranged to cover the length of each substrate 140 simultaneously, has guaranteed that gas is more even on each substrate 140, further improves the film-formation result of substrate 140.
In further embodiment of the present invention, as shown in Figure 1, chamber device also comprises the vacuum pump 180 for exhaust.
Wherein, exhaust channel 170 is oppositely arranged with admission passage 150, is used for getting rid of process gas and byproduct of reaction gas etc.Thus, gas flows apart from the longest between admission passage 150 and exhaust channel 170, thereby has prolonged the duration of contact of gas and substrate 140, and has effectively improved gas effciency.
As shown in fig. 1, vacuum pump 180 is connected to described exhaust channel 170 to accelerate the eliminating chambers 110 such as process gas and reacted byproduct gas.
Chamber device according to the embodiment of the invention, exhaust channel 170 is from the mode of opposite side exhaust by adopting admission passage 150 from a side air inlet of chamber 110, replacement is in temperature loss (around the borehole portion temperature are lower than in the middle of the pallet 120) that air inlet or the exhaust of pallet 120 middle portion boreholes brings, dwindle the radial temperature difference on the pallet 120, guaranteed the homogeneity in temperature field, substrate 140 homogeneous heating thus, processing efficiency is high, has also satisfied in addition the processing requirement of equipment.
In addition, the present invention further provides a kind of substrate processing equipment, this substrate processing equipment can comprise aforesaid chamber device.According to one embodiment of present invention, this substrate processing equipment can comprise MOCVD equipment for chemical vapor depsotition equipment.
Other structures and operation according to the chemical vapor depsotition equipment of the embodiment of the invention all are known for those of ordinary skills, no longer give unnecessary details here.
In the description of this specification sheets, the description of reference term " embodiment ", " some embodiment ", " example ", " concrete example " or " some examples " etc. means to be contained at least one embodiment of the present invention or the example in conjunction with specific features, structure, material or the characteristics of this embodiment or example description.In this manual, the schematic statement of above-mentioned term not necessarily referred to identical embodiment or example.And the specific features of description, structure, material or characteristics can be with suitable mode combinations in any one or more embodiment or example.
Although illustrated and described embodiments of the invention, those having ordinary skill in the art will appreciate that: in the situation that do not break away from principle of the present invention and aim can be carried out multiple variation, modification, replacement and modification to these embodiment, scope of the present invention is limited by claim and equivalent thereof.
Claims (12)
1. a chamber device is characterized in that, comprising:
Chamber body is limited with chamber in the described chamber body;
Multiple layer tray, described multiple layer tray is located in the described chamber along the vertical direction compartment of terrain, described multiple layer tray is fixedly connected with and rotates by driving the described pallet of described strut member rotation drive by the strut member of vertical setting, and described multiple layer tray is respectively applied to carrying substrates; And
Admission passage, described admission passage are positioned at chamber and are arranged on a side of described multiple layer tray, are used at least a portion spray technology gas to the substrate that is carried on described multiple layer tray.
2. chamber device according to claim 1 is characterized in that, described chamber device further comprises:
The indirect heating source, described indirect heating source arranges around described chamber body periphery.
3. chamber device according to claim 1 is characterized in that, described indirect heating source is ruhmkorff coil.
4. chamber device according to claim 1 is characterized in that, described chamber device further comprises:
Drive-motor, described drive-motor is used for driving the uniform rotation of described strut member uniaxially.
5. chamber device according to claim 1 is characterized in that, described admission passage is made by quartz.
6. chamber device according to claim 1 is characterized in that, described admission passage is fan-shaped and towards the even spray technology gas in substrate level ground that is carried on the described multiple layer tray.
7. chamber device according to claim 6, it is characterized in that, the fan-shaped curvature of described admission passage identical with the curvature of described multiple layer tray and with described multiple layer tray interval predetermined distance, described fan-shaped chord length is arranged so that the process gas of described admission passage horizontal-jet covers the substrate that is arranged on described each pallet.
8. chamber device according to claim 1 is characterized in that, described chamber device further comprises:
Exhaust channel, described exhaust channel and described fan-shaped gas inlet pipeline are oppositely arranged, and are used for getting rid of process gas; And
Vacuum pump, described vacuum pump is connected to described exhaust channel.
9. chamber device according to claim 1 is characterized in that, described pallet is formed by graphite or alloy.
10. chamber device according to claim 1 is characterized in that, the main part of described pallet is formed by quartz, and the part that contacts with substrate is formed by graphite or alloy.
11. a substrate processing equipment is characterized in that, comprises such as each described chamber device among the claim 1-10.
12. substrate processing equipment according to claim 11 is characterized in that, described substrate processing equipment is chemical vapor depsotition equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103276876A CN103060774A (en) | 2011-10-24 | 2011-10-24 | Chamber device and substrate processing equipment with same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103276876A CN103060774A (en) | 2011-10-24 | 2011-10-24 | Chamber device and substrate processing equipment with same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103060774A true CN103060774A (en) | 2013-04-24 |
Family
ID=48103661
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011103276876A Pending CN103060774A (en) | 2011-10-24 | 2011-10-24 | Chamber device and substrate processing equipment with same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103060774A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104046959A (en) * | 2013-06-08 | 2014-09-17 | 唐治 | Chemical vapor deposition device for epitaxial growth of silicon carbide |
| CN105714245A (en) * | 2014-12-01 | 2016-06-29 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber |
| CN106128930A (en) * | 2016-07-22 | 2016-11-16 | 无锡宏纳科技有限公司 | Plasma etching stove |
| CN106191990A (en) * | 2016-08-30 | 2016-12-07 | 上海华力微电子有限公司 | A kind of air intake installation of boiler tube |
| CN106467980A (en) * | 2015-08-21 | 2017-03-01 | 东莞市中镓半导体科技有限公司 | A kind of assembling auxiliary device of large-scale rectilinear hvpe reactor room |
| CN110055517A (en) * | 2019-04-28 | 2019-07-26 | 云谷（固安）科技有限公司 | Plasma cavity and its substrate bearing device |
| CN110184652A (en) * | 2019-05-23 | 2019-08-30 | 上海申和热磁电子有限公司 | A kind of chemical vapor deposition unit and method improving silicon warp degree |
| CN110218976A (en) * | 2019-07-17 | 2019-09-10 | 南通职业大学 | A kind of components automatic film coating device |
| CN110629200A (en) * | 2019-09-20 | 2019-12-31 | 理想晶延半导体设备（上海）有限公司 | Semiconductor processing equipment |
| CN111088526A (en) * | 2019-12-27 | 2020-05-01 | 季华实验室 | Multi-piece loaded silicon carbide epitaxial growth equipment |
| CN111910271A (en) * | 2020-06-19 | 2020-11-10 | 中国纺织科学研究院有限公司 | Spinning equipment and slow cooling device thereof |
| CN113832442A (en) * | 2021-09-23 | 2021-12-24 | 哈尔滨工业大学 | Plasma source ion implanter with preparation chamber for linear or cross transfer of workpieces |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1183854A (en) * | 1995-05-05 | 1998-06-03 | 圣戈本-诺顿工业搪瓷有限公司 | Slip free vertical rack design |
| WO1999036588A1 (en) * | 1998-01-15 | 1999-07-22 | Torrex Equipment Corporation | Method and apparatus for improved chemical vapor deposition processes using tunable temperature controlled gas injectors |
| US6533534B2 (en) * | 1993-05-03 | 2003-03-18 | Unaxis Balzers Aktiengesellschaft | Method for improving the rate of a plasma enhanced vacuum treatment |
| KR20070059512A (en) * | 2005-12-06 | 2007-06-12 | 주식회사 탑테크이십일 | An ion plating jig ass'y |
-
2011
- 2011-10-24 CN CN2011103276876A patent/CN103060774A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6533534B2 (en) * | 1993-05-03 | 2003-03-18 | Unaxis Balzers Aktiengesellschaft | Method for improving the rate of a plasma enhanced vacuum treatment |
| CN1183854A (en) * | 1995-05-05 | 1998-06-03 | 圣戈本-诺顿工业搪瓷有限公司 | Slip free vertical rack design |
| WO1999036588A1 (en) * | 1998-01-15 | 1999-07-22 | Torrex Equipment Corporation | Method and apparatus for improved chemical vapor deposition processes using tunable temperature controlled gas injectors |
| KR20070059512A (en) * | 2005-12-06 | 2007-06-12 | 주식회사 탑테크이십일 | An ion plating jig ass'y |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104046959B (en) * | 2013-06-08 | 2016-04-27 | 唐治 | A kind of chemical vapor deposition unit for silicon carbide epitaxial growth |
| CN104046959A (en) * | 2013-06-08 | 2014-09-17 | 唐治 | Chemical vapor deposition device for epitaxial growth of silicon carbide |
| CN105714245B (en) * | 2014-12-01 | 2019-08-23 | 北京北方华创微电子装备有限公司 | Reaction chamber |
| CN105714245A (en) * | 2014-12-01 | 2016-06-29 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber |
| CN106467980A (en) * | 2015-08-21 | 2017-03-01 | 东莞市中镓半导体科技有限公司 | A kind of assembling auxiliary device of large-scale rectilinear hvpe reactor room |
| CN106467980B (en) * | 2015-08-21 | 2019-01-29 | 东莞市中镓半导体科技有限公司 | A kind of assembly auxiliary device of the rectilinear hvpe reactor room of large size |
| CN106128930A (en) * | 2016-07-22 | 2016-11-16 | 无锡宏纳科技有限公司 | Plasma etching stove |
| CN106191990A (en) * | 2016-08-30 | 2016-12-07 | 上海华力微电子有限公司 | A kind of air intake installation of boiler tube |
| CN110055517A (en) * | 2019-04-28 | 2019-07-26 | 云谷（固安）科技有限公司 | Plasma cavity and its substrate bearing device |
| CN110184652A (en) * | 2019-05-23 | 2019-08-30 | 上海申和热磁电子有限公司 | A kind of chemical vapor deposition unit and method improving silicon warp degree |
| CN110218976A (en) * | 2019-07-17 | 2019-09-10 | 南通职业大学 | A kind of components automatic film coating device |
| CN110629200A (en) * | 2019-09-20 | 2019-12-31 | 理想晶延半导体设备（上海）有限公司 | Semiconductor processing equipment |
| CN111088526A (en) * | 2019-12-27 | 2020-05-01 | 季华实验室 | Multi-piece loaded silicon carbide epitaxial growth equipment |
| CN111088526B (en) * | 2019-12-27 | 2021-05-11 | 季华实验室 | Multi-piece loaded silicon carbide epitaxial growth equipment |
| CN111910271A (en) * | 2020-06-19 | 2020-11-10 | 中国纺织科学研究院有限公司 | Spinning equipment and slow cooling device thereof |
| CN111910271B (en) * | 2020-06-19 | 2021-12-17 | 中国纺织科学研究院有限公司 | Spinning equipment and slow cooling device thereof |
| CN113832442A (en) * | 2021-09-23 | 2021-12-24 | 哈尔滨工业大学 | Plasma source ion implanter with preparation chamber for linear or cross transfer of workpieces |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103060774A (en) | Chamber device and substrate processing equipment with same | |
| CN101194040B (en) | Rotating substrate support and methods of use | |
| JP6231167B2 (en) | Substrate processing equipment | |
| CN102560431B (en) | Metal organic chemical vapor deposition device and chamber assembly thereof | |
| US10793949B2 (en) | Substrate processing apparatus and substrate processing method using the same | |
| CN111052308A (en) | Vapor phase growth apparatus and vapor phase growth method | |
| KR20130014488A (en) | Semiconductor thin-film manufacturing method, semiconductor thin-film manufacturing apparatus, susceptor, and susceptor holding tool | |
| US20130255578A1 (en) | Chemical vapor deposition apparatus having susceptor | |
| EP2476778A1 (en) | Susceptor. | |
| US20180138031A1 (en) | Process chamber having separate process gas and purge gas regions | |
| CN103031540A (en) | Reaction cavity device and substrate processing equipment with same | |
| CN103726103A (en) | Reaction chamber | |
| KR101625478B1 (en) | Apparatus for depositing film with vertically stacked heaters and method for depositing film using it | |
| WO2017059114A1 (en) | Cvd apparatus | |
| WO2019044392A1 (en) | Vapor-phase deposition method | |
| CN108411362B (en) | Chamber and epitaxial growth equipment | |
| CN102953051A (en) | Chamber device and substrate treating plant with same | |
| CN101930891B (en) | Reaction chamber and lining device | |
| US20190144996A1 (en) | Wafer carrier and metal organic chemical vapor deposition apparatus | |
| KR20210013335A (en) | Gas diffuser support structure to reduce particle generation | |
| CN103628040B (en) | MOCVD device and MOCVD heating means | |
| CN102796992B (en) | Reaction chamber device and substrate processing equipment with same | |
| US20170370020A1 (en) | Method for preparing restart of reactor for epitaxial growth on wafer | |
| KR20140003856U (en) | Apparatus for depositing including susceptor conducting uniform heat to wafers | |
| CN102766850A (en) | Film deposition device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20130424 |