KR101625478B1 - Apparatus for depositing film with vertically stacked heaters and method for depositing film using it - Google Patents

Apparatus for depositing film with vertically stacked heaters and method for depositing film using it Download PDF

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Publication number
KR101625478B1
KR101625478B1 KR1020150053050A KR20150053050A KR101625478B1 KR 101625478 B1 KR101625478 B1 KR 101625478B1 KR 1020150053050 A KR1020150053050 A KR 1020150053050A KR 20150053050 A KR20150053050 A KR 20150053050A KR 101625478 B1 KR101625478 B1 KR 101625478B1
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South Korea
Prior art keywords
substrate
heater
thin film
reaction chamber
substrates
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KR1020150053050A
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Korean (ko)
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백용구
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백용구
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Abstract

The present invention relates to a thin film deposition device for depositing a thin film on a plurality of substrates stacked vertically by supplying a reaction gas and a thin film deposition method using the same. The thin film deposition device includes: a reaction chamber in which a plurality of substrates are treated; a substrate support unit which stacks and supports the substrates vertically in the reaction chamber; and a heating unit which includes a plurality of heaters each of which is placed under a corresponding substrate and heats the substrate and a heater support bar which stacks and supports the heaters vertically. By doing so, according to the thin film deposition device and the thin film deposition method using the same of the present invention, the present invention can increase productivity of a substrate per unit area by stacking a plurality of substrates vertically. Also, by placing a plurality of heaters each of which corresponds to each of the substrates, the present invention can increase the transfer efficiency of thermal energy and reduce generation of particles by suppressing the deposition reaction in the reaction chamber by heating substrates accommodated on a heater only. Also, the present invention can prevent deterioration of reaction gas by supplying reaction gas to a substrate from the outside, of which the temperature is low, of the reaction chamber. Furthermore, the present invention can prevent up-and-down flow of reaction gas in a heater by including a heater extension place which divides the inside of the reaction chamber horizontally and can improve supply of reaction gas to the substrate. Also, the present invention, by rotation a substrate, supply or discharge reaction to or from each divided section by the heaters through a gas supply nozzle or a gas discharge hole, thereby supplying thermal energy and reaction to a substrate uniformly.

Description

TECHNICAL FIELD [0001] The present invention relates to a thin film deposition apparatus having a vertical lamination heater and a thin film deposition method using the thin film deposition apparatus.

The present invention relates to a thin film deposition apparatus and a thin film deposition method using the same, and more particularly, to a thin film deposition apparatus for depositing a thin film by supplying a reactive gas to a plurality of vertically stacked substrates, and a thin film deposition method using the thin film deposition apparatus.

Methods for depositing a thin film by supplying a reactive gas to a substrate can be classified into an atomic layer deposition (ALD) method and a chemical vapor deposition (CVD) method. The atomic layer thin film deposition method is a method of adsorbing and depositing the substrate on the substrate by alternately supplying the reaction gas and purging the substrate, and the chemical vapor deposition method is a method of simultaneously spraying the reaction gas and depositing on the substrate.

 The single substrate reactor, which is a conventional thin film deposition apparatus, directly heated the substrate and uniformly supplied the reaction gas to the substrate at a lower temperature than the substrate. This is because only a single substrate is processed, but a high quality thin film can be obtained. However, the productivity is low in the thin film deposition method in which the deposition rate is slow as in the atomic layer thin film deposition method.

According to a conventional method for improving the productivity of a thin film deposition apparatus, a plurality of substrates are vertically stacked in a reaction furnace, thermal energy is provided from a heater provided outside the reaction furnace, A thin film deposition apparatus for depositing a gas is described.

The above-mentioned thin film deposition apparatus supplies the energy required for the reaction from the outside as a reaction in which the substrate is embedded, and energy transfer efficiency is low. In addition, an injector in which an injection port is formed at a height corresponding to a plurality of substrates is used in order to uniformly inject the reaction gas into a vertically stacked substrate in a reaction furnace. The reactant gas is deteriorated by heat energy supplied from the outside, There is a problem in obtaining a high-quality thin film such as a gas is deposited in the injector.

In order to solve the problems of the background art described above, the present invention provides a thin film deposition apparatus that increases energy transfer efficiency in providing thermal energy from a heater to a substrate.

It is another object of the present invention to provide a thin film deposition apparatus for uniformly depositing a thin film on a plurality of substrates and a thin film deposition method using the same.

Another object of the present invention is to provide a thin-film deposition apparatus and a thin-film deposition method using the thin-film deposition apparatus, which prevent the reaction gas from being deteriorated during the supply of the reactive gas and smoothly flow to increase the quality of the substrate on which the thin-film is deposited.

According to an aspect of the present invention, there is provided a thin film deposition apparatus having a vertical lamination heater, including: a reaction chamber for processing a plurality of substrates; A substrate support for vertically stacking and supporting the plurality of substrates in the reaction chamber; A heating unit arranged to correspond to a lower portion of each of the plurality of substrates and having a plurality of heaters for heating the substrates and a heater support vertically stacking and supporting the plurality of heaters; .

Preferably, the apparatus further comprises: an up-down driving unit for raising and lowering the substrate supporting unit and the heating unit to and from the reaction chamber; And a rotation driving unit for rotating the substrate supporting unit and the heating unit; .

Preferably, the substrate support comprises: a plurality of substrate supports vertically standing on the substrate outlets; And a lift pin coupled to the substrate support and supporting the substrate underneath; .

Preferably, the substrate driving part mounts or detaches the substrate supported on the lift pins by moving the substrate support up and down on the heater. .

Preferably, the substrate driving unit drives the substrate support to slide in the vertical direction along the heater support.

Preferably, the substrate driving unit includes: a substrate spacing plate coupled to a lower end of each of the plurality of substrate supports; An air cylinder for providing a driving force to the substrate separation plate; And a substrate spacing bellows for sealingly securing the substrate spacing plate and the air cylinder; .

Preferably, the heater is formed with a pin insertion groove in which the lift pin is lowered by the substrate driving part to be inserted into the upper surface of the heater.

Preferably, the depth of the pin insertion groove is formed to be equal to the thickness of the lift pin.

Preferably, the heater extension plate extends to the outer periphery of each of the plurality of heaters so as to divide the inside of the reaction chamber horizontally and is disposed close to the inner circumferential surface of the reaction chamber. .

Preferably, the heater extension plate is formed with a bent portion whose outer periphery is bent upward or downward so as to be close to the inner circumferential surface of the reaction chamber.

Preferably, the gas supply unit includes a gas supply nozzle at one side of the reaction chamber to supply a reaction gas for processing the substrate for each space partitioned by the plurality of heaters. And a gas exhaust unit having a gas exhaust port at a position facing the gas supply nozzle to exhaust a reaction gas for each of the partitioned spaces; .

According to another aspect of the present invention, there is provided a method of depositing a thin film using the above-described thin film deposition apparatus, comprising the steps of: sequentially supplying the plurality of substrates from the outside to the substrate supporter while raising the heating section stepwise A substrate carrying step; A substrate placing step of placing the substrate on the heater by lowering the substrate supporting part in a state where the heater is preheated; A gas supply step of supplying a reaction gas into the reaction chamber while rotating the mounted substrate inside the reaction chamber to process the substrate; A gas exhausting step of exhausting the reaction gas from the inside of the reaction chamber; A substrate lifting step of lifting the substrate supporting part to detach the substrate placed on the heater; And a substrate carrying-out step of taking out the plurality of substrates to the outside while gradually lowering the heating part; .

According to the thin film deposition apparatus having the vertical lamination heater of the present invention and the thin film deposition method using the same, it is possible to vertically stack a plurality of substrates to increase the productivity of the substrate per unit area.

In the present invention, a plurality of heaters are disposed so as to correspond to each of a plurality of substrates to increase thermal energy transfer efficiency. By heating only the substrate placed on the heater, deposition reaction inside the reaction chamber is suppressed, and generation of particles can be reduced.

In addition, the present invention can suppress the reaction of the reaction gas by supplying the reaction gas from the outside of the reaction chamber at a low temperature to the substrate.

Further, the present invention provides a heater extension plate horizontally dividing the inside of the reaction chamber, so that the reaction gas can be prevented from flowing up and down the heater, and the reaction gas supply to the substrate can be efficiently improved.

In addition, the present invention can uniformly supply thermal energy and reaction gas to the substrate by supplying and exhausting the reaction gas through the gas supply nozzle and the gas exhaust port provided for each space partitioned by the plurality of heaters while rotating the substrate.

BRIEF DESCRIPTION OF DRAWINGS FIG. 1 is a block diagram showing a configuration of a thin film deposition apparatus according to the present invention; FIG.
2 is a sectional view of a thin film deposition apparatus according to an embodiment of the present invention.
Fig. 3 is a view showing a state in which a lift pin constituting the present invention is spaced apart from a heater. Fig.
4 is a partial perspective view showing a state in which a lift pin constituting the present invention is spaced apart from a heater;
5 is a configuration diagram showing a state in which a substrate is placed on a heater;
6 is a perspective view showing a state where a substrate is placed on a heater.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. 1 and 2, a thin film deposition apparatus having a vertical lamination heater according to an embodiment of the present invention includes a reaction chamber 100, a substrate support 200, a heating unit 300, A gas exhaust unit 500, and a load lock chamber 600.

The reaction chamber 100 has an inner space to process a plurality of substrates, and the substrate support 200 and the heating unit 300 are accommodated in the inner space. The substrate is transported while keeping airtight so as to deposit a thin film on a plurality of substrates in the reaction chamber 100, and the substrate is processed by supplying and exhausting the reaction gas.

The substrate support 200 may vertically stack and support a plurality of substrates in the reaction chamber 100 to improve productivity as compared with a single substrate. The substrate support 200 may include a substrate support 210 And a lift pin 220.

A plurality of substrates are vertically erected on the periphery of the plurality of substrates so as to vertically stack and support the plurality of substrates. In order to stably support the substrates, three or more substrate supports 210 are preferably provided Do.

The lift pins 220 are spaced apart from each other in the inward direction of the substrate support 210 to support the lower portion of the substrate. This allows the substrate to be seated or detached from the heater 310.

The heating unit 300 includes a plurality of heaters 310 and a heater support 320.

The heater 310 heats the substrate to supply the substrate with thermal energy necessary for the thin film deposition process. The heaters 310 are stacked vertically so as to correspond to a lower portion of each of the plurality of vertically stacked substrates, and the substrate is seated thereon. Thus, since the temperature of the periphery of the substrate in the reaction chamber 100 is lower than the temperature of the substrate, deterioration reaction is suppressed during the supply of the reactive gas to obtain a substrate having a high quality thin film deposited thereon. Can be suppressed.

4, a pin insertion groove 311 is formed in the upper surface of the heater 310 so that the lift pin 220 is inserted into the heater 310 so that the upper portion of the heater 310 completely contacts the substrate. The depth of the pin insertion grooves 311 may be equal to the thickness of the lift pins 220 because the pin insertion grooves 311 may be formed on the lower surface of the substrate to generate a portion spaced apart from the heater 310, So that the entire substrate can be uniformly heated.

Further, the interval between the plurality of heaters 310 can be set to 5 mm or more and 30 mm or less. If the interval between the heaters 310 is too wide, the number of substrates that can be processed in the same space decreases. Conversely, if the interval between the heaters 310 is too narrow, And the heater 310 may be interfered with the substrate placed on the blade and the blade. Therefore, it is preferable to set the interval between the heaters 310 so that the substrate can be loaded as much as possible without causing interference between the heater 310 and the blade or the substrate.

A plurality of heater supports 320 are vertically formed on the outer periphery of the plurality of heaters to vertically stack and support the plurality of heaters. In order to stably support the heaters 320, three or more heater supports 320 are preferably provided Do. The heater support 320 may include a power supply connection line for supplying power to the heater 310 or a space through which the temperature compensation line for measuring the temperature in the reaction chamber 100 can pass. At this time, the substrate support 210 is inserted into the inner surface of the heater support 320, and the substrate support can be slid up and down along the heater support 320.

The heater support 320 may be formed so as to surround the outer surface of the substrate support 210 so that the substrate support 210 slides in the vertical direction along the heater support 320.

The substrate driving unit 230 drives the substrate support 210 and the heater support 320 to slide so that the substrate supported on the lift pins 220 is placed on or detached from the heater The substrate support table 210 is moved up and down. The substrate driving unit 230 includes a substrate spacing plate 231, an air cylinder 233, and a substrate spacing bellows 232.

The substrate spacing plate 231 is coupled to the lower ends of the plurality of substrate supports 210 so that the plurality of substrate supports 210 are simultaneously lifted and lowered.

The air cylinder 233 is provided inside the load lock chamber 600 and is coupled to the rotation intermediate plate 610 to transfer the driving force from the outside of the reaction chamber 100 to the substrate separation plate 231. This air cylinder 233 provides the driving air pressure to the air cylinder 233 using a rotary union 234 which is a known technique.

The substrate spacing bellows 232 airtightens the substrate spacing plate 231 and the air cylinder 233. The substrate support 210 can be slid up and down along the heater support 320 by interlocking the driving force from the outside of the reaction chamber 100 with the substrate separation plate 231 while keeping airtight.

The air cylinder 233 transmits the driving air pressure to the air cylinder 233 through the rotary union 234 and the air cylinder 233 transfers the ascending and descending driving force to the substrate separating plate 231, The substrate support 200 is lifted and lowered to be seated or detached.

Since the plurality of heater supports 320 support the outer periphery of the heater 310 on which the substrate is mounted, the spacing between the at least two heater supports 320 is larger than the diameter of the substrate, So that the support base 320 is not interfered.

A plurality of heater supports 320 are positioned at the outer periphery of the heater 310 with a gap therebetween, thereby generating a flow space between the inner circumferential surface of the reaction chamber 100 and the heater 310. Since the reaction gas flows above and below the heater 310 through the flow space to interfere with the smooth flow of the reaction gas, it is necessary to suppress the upward and downward flow of the reaction gas.

The heating unit 300 includes a heater extension plate 330 extending from the outer periphery of each of the plurality of heaters 310 to horizontally partition the inside of the reaction chamber 100 and disposed adjacent to the inner circumferential surface of the reaction chamber 100, May be additionally provided.

The distance between the heater extension plate 330 and the inner peripheral surface of the reaction chamber 100 is 3 mm or less and the height of the heater extension plate 330 is equal to or lower than the height of the heater 310, 0.0 > 320 < / RTI > Further, the heater extension plate 330 may form a bent portion 331 whose outer periphery is bent upward or downward. This allows the outer periphery of the bent portion 331 of the heater extension plate 330 to be close to the inner circumferential surface of the reaction chamber so that the weight of the heater extension plate 330 can be reduced while sufficiently suppressing the upward and downward flows of the reaction gas.

The gas supply unit 400 includes a gas supply nozzle 410 at one side of the reaction chamber 100 to supply a reaction gas for processing the substrate for each space partitioned by the plurality of heaters 310.

The gas supply nozzle 410 is vertically arranged on one side of the reaction chamber 100 to supply the reaction gas. That is, to vertically stack the plurality of heaters 310 and uniformly supply the reaction gas to the plurality of substrates, the reaction gas must be injected for each space between the heater and the heater. Therefore, the number of the gas supply nozzles 410, You need to install it.

For example, the gas supply nozzle 410 may have a plurality of holes in a direction parallel to the substrate corresponding to each of a plurality of vertically stacked substrates.

The gas exhaust unit 500 includes a gas exhaust port 510 on the other side of the reaction chamber 100 opposite to the gas supply nozzle 410 so as to exhaust the reactive gas for each space partitioned by the plurality of heaters 310.

The gas exhaust port 510 is vertically arranged on the other side of the reaction chamber 100 to exhaust the reaction gas. That is, in order to exhaust the reaction gas in which the plurality of heaters 310 are vertically stacked and processed the substrate inside the reaction chamber 100, the reaction gas must be exhausted for each space partitioned by the plurality of heaters 310, It is necessary to provide the gas exhaust holes 510 by the number of the plurality of substrates.

For example, the gas exhaust port 510 is formed in a slit shape on each of a plurality of vertically stacked substrates corresponding to the gas supply nozzle 410 described above. Further, even if the gas supply nozzle 410 is not provided on the upper or lower part of the reaction chamber 100, the gas exhaust port 510 can be additionally provided.

Although not shown in the drawing, the gas supply unit 400 may include a supply distribution plate for distributing the reaction gas uniformly to each of the gas supply nozzles 410 arranged vertically in the gas supply unit 400. The gas exhaust part 500 may also include an exhaust dividing plate so that the reaction gas is exhausted from each of the gas exhaust holes 510 vertically arranged inside thereof at a uniform pressure.

The load lock chamber 600 is generally located below the reaction chamber 100 and is used to drive the substrate support unit 200 and the heating unit 300 within the load lock chamber 600, May be disposed.

The load lock chamber 600 includes a substrate drive unit 230, a rotation plate 610, a power feed through 620, an outer cylinder 630, an inner cylinder 640, A chamber bellows 650, a substrate inlet port 660, and a slip ring 670. Each component will be described in detail below.

The rotation intermediate plate 610 is hermetically fixed to the substrate spacing bellows 233, the power feedthrough 620 and the inner cylinder 640 respectively and is fixed to the lower portion of the substrate supporting portion 200 and the heating portion 300 And transfers the up and down movement force and rotation driving force from the outside of the load lock chamber 600 to raise and lower both the substrate supporting portion 200 and the heating portion 300.

The power feedthrough 620 is hermetically fixed to the rotary plate 610 and includes a plurality of terminals for supplying power to the inside of the reaction chamber 100, Connect.

The outer cylinder 630 is connected to the lifting and lowering driving unit 631 to move up and down and move up and down the substrate supporting unit 200 and the heating unit 300 in cooperation with the inner cylinder 640. The up-and-down driving unit 631 moves up and down the substrate supporting unit 200 and the heating unit 300 so as to move them into and out of the reaction chamber 100. 2, the up-and-down driving unit 631 provides driving force to the up-and-down moving unit 632 to move up and down the up-and-down moving unit 632 coupled to the outer cylinder 630, To the outer cylinder (630).

The inner cylinder 640 is hermetically fixed to the rotation intermediate plate 610 and rotates in connection with the rotation driving unit 641. The inner cylinder 640 rotates in conjunction with the rotation intermediate plate 610 to rotate the substrate supporting unit 200 and the heating unit 300). The rotation driving unit 641 rotates the substrate supporting unit 200 and the heating unit 300. At this time, the outer cylinder of the inner cylinder 640 may be provided with a rotating portion 642 such as a gear to transmit the driving force from the rotation driving portion 641 to the inner cylinder 640.

A magnetic fluid is used between the inner and outer cylinders 640 and 630 so that the airtightness between the two cylinders 630 and 640 can be maintained even if the outer cylinder 630 is fixed and the inner cylinder 640 rotates.

The chamber bellows 650 can maintain the airtightness between the load lock chamber 600 and the outer cylinder 630 through compression and relaxation by the movement of the outer cylinder 630 up and down.

The substrate inlet port 660 is formed at one side of the load lock chamber 600 to bring the substrate into and out of the load lock chamber 600.

The slip ring 670 is connected to the power feedthrough 620 and is capable of operating the heater 310 in a state in which the heater 310 is rotated by transmitting power from the fixed external power source to the heater 310 rotating .

Hereinafter, a process of driving the substrate supporting unit 200 and the heating unit 300 up and down and rotating the substrate supporting unit 200 and the process of supplying power to the heater 310 will be described.

Describing in detail the process of raising and lowering the substrate supporting unit 200 and the heating unit 300, the raising and lowering driving unit 631 raises and lowers the outer cylinder 630, thereby moving the outer cylinder 630 The inner cylinder 640 and the rotation intermediate plate 610 are raised and lowered to move the substrate supporting unit 200 and the heating unit 300 up and down. Thus, the substrate supporting portion 200 and the heating portion 300 can be moved in and out of the reaction chamber 100.

The rotation driving unit 641 rotates the inner cylinder 640 and rotates the rotation intermediate plate 610 coupled to the inner cylinder 640 to rotate the substrate supporting unit 200 The heating unit 300 is rotated. Thereby, even if the reaction gas is supplied from one side of the reaction chamber 100 by rotating the substrate, the thin film can be uniformly deposited on the substrate.

Finally, a process of supplying power to the heater 310 will be described in more detail. The power source is a power source located outside the thin film deposition apparatus 610, which converts the fixed power source into the rotating power source through the slip ring 670, And the supplied power source reaches the heater 310 through the rotation intermediate plate 610 and the heater support 320. [

Hereinafter, a thin film deposition method in which a substrate is carried, processed, and transported in the thin film deposition apparatus of the present invention will be described in detail with reference to the drawings.

The thin film deposition method of the present invention comprises a substrate carrying step, a substrate carrying step, a gas supplying step, a gas discharging step, a substrate removing step, and a substrate carrying-out step.

In the substrate carry-in step, a plurality of substrates are sequentially supplied from the outside to the substrate support portion while raising the heating portion in a stepwise manner.

3 and 4, the lifting and lowering driving unit 631 moves the substrate supporting unit 200 and the heating unit 300 downward to be positioned inside the load lock chamber 600, The support table 210 is lifted from the heater support 320 so that the lift pins 230 are separated from the heater 310. In this state, the substrate supporting portion 200 and the heating portion 300 are stepped up and the substrate is placed on the lift pins 230 through the substrate inlet port 660.

In the substrate mounting step, the substrate supporting unit 200 is lowered in a state where the heater 310 is preheated, and the substrate is placed on the heater 300.

 5 and 6, the substrate driving unit 230 drives the substrate support 210 to descend along the heater support 320, and the lift pin 220 is inserted into the pin insertion groove 311 And the substrate is placed on the heater 320.

1, the elevating and lowering driving unit 631 moves the substrate supporting unit 200 and the heating unit 300 up and down and places the substrate supporting unit 200 and the heating unit 300 inside the reaction chamber 100 to process the substrate.

At this time, the process of the substrate lowering by the substrate driving unit 230 and the process of moving the substrate supporting unit 200 and the heating unit 300 up and down by the elevating and lowering driving unit 631 may be changed.

In the gas supply step, the substrate is processed by supplying the reaction gas into the reaction chamber 100 while rotating the substrate placed inside the reaction chamber 100.

The rotation driving unit 641 rotates the substrate and the reaction gas supplied by the gas supply unit 400 is injected into the space partitioned by the heater 310 through the gas supply nozzle 410 formed at one side of the reaction chamber 100, do. By supplying the reaction gas while rotating the substrate, the substrate can be processed by depositing a thin film more uniformly on a plurality of substrates.

In the gas evacuation step, the reaction gas is exhausted from the inside of the reaction chamber.

The reaction gas in the reaction chamber 100 can be exhausted through the gas exhaust port 510 formed at a position opposite to the gas supply nozzle 410 for each space partitioned by the heater 310 have.

In the substrate desorption step, the substrate supporting part 200 is lifted to detach the substrate placed on the heater 310.

The lifting and lowering driving unit 631 moves the substrate supporting unit 200 and the heating unit 300 downward and places them in the load lock chamber 600.

The substrate driving unit 230 drives the substrate support 210 to move up and down along the heater support 320 so that the lift pins 220 on which the substrate is mounted are spaced from the heater 310.

At this time, the process of lowering the substrate supporting unit 200 and the heating unit 300 by the raising and lowering driving unit 631 and the process of removing the substrate from the heater 320 by the substrate driving unit 230 may be changed.

In the substrate take-out step, the plurality of substrates are taken out to the outside while gradually lowering the heating unit 300.

The lifting and lowering driving unit 631 moves the substrate from the lift pin 230 through the substrate inlet opening 660 while the substrate supporting unit 200 and the heating unit 300 descend stepwise and is taken out of the load lock chamber 600 do.

Although not shown in the drawings, the substrate may have a temperature controlling heater that can control or maintain the temperature outside the reaction chamber 100 to smoothly deposit the thin film on the substrate, or may form a fluid flow path for temperature control.

While the invention has been shown and described with reference to certain embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

100: Reaction chamber
200: substrate support
210: substrate support
220: Lift pin
230:
300: heating part
310: heater
320: heater support
330: heater extension plate
400: gas supply unit
410: gas supply nozzle
500: gas exhaust part
510: gas exhaust
600: load lock chamber
610:
620: Power feedthrough
630: outer cylinder
640: inner cylinder
650: chamber bellows
660: Substrate inlet
670: slip ring

Claims (12)

A reaction chamber for processing a plurality of substrates;
A substrate support for vertically stacking and supporting the plurality of substrates in the reaction chamber; And
A heating unit arranged to correspond to a lower portion of each of the plurality of substrates and having a plurality of heaters for heating the substrates and a heater support vertically stacking and supporting the plurality of heaters; Lt; / RTI >
The substrate supporting unit may include: a plurality of substrate supports vertically standing on the outer sides of the plurality of substrates; A lift pin coupled to the substrate support and supporting the substrate underneath; And a substrate driving unit for mounting and lowering the substrate supporting table and holding the substrate supported on the lift pin on the heater,
Wherein the heater is formed with a fin insert groove into which the lift pin is lowered by the substrate driving unit and inserted into the upper surface of the heater. The method according to claim 1,
An up / down driving unit for raising / lowering the substrate supporting unit and the heating unit to / from the reaction chamber; And
A rotation driving unit for rotating the substrate supporting unit and the heating unit; Further comprising: a thin film deposition apparatus. delete delete The method according to claim 1,
Wherein the substrate driving unit drives the substrate support to slide in the vertical direction along the heater support. 6. The method of claim 5,
Wherein the substrate driving unit includes: a substrate separation plate coupled to a lower end of each of the plurality of substrate support rods;
An air cylinder for providing a driving force to the substrate separation plate; And
A substrate spacing bellows for sealingly securing the substrate spacing plate and the air cylinder; Wherein the thin film deposition apparatus comprises: delete The method according to claim 1,
Wherein a depth of the pin insertion groove is equal to a thickness of the lift pin. The method according to claim 1,
A heater extension plate extending from an outer periphery of each of the plurality of heaters so as to horizontally partition the inside of the reaction chamber and disposed adjacent to an inner peripheral surface of the reaction chamber; Further comprising: a thin film deposition apparatus. 10. The method of claim 9,
Wherein the heater extension plate is formed with a bent portion whose outer periphery is bent upward or downward so as to be close to the inner circumferential surface of the reaction chamber. The method according to claim 1,
A gas supply unit having a gas supply nozzle at one side of the reaction chamber to supply a reaction gas for processing the substrate for each space partitioned by the plurality of heaters; And
A gas exhaust unit having a gas exhaust port at a position facing the gas supply nozzle to exhaust a reaction gas for each of the divided spaces; Further comprising: a thin film deposition apparatus. The thin film deposition method using the thin film deposition apparatus of claim 2,
A substrate carrying step of sequentially supplying the plurality of substrates from the outside to the substrate supporting part while raising the heating part stepwise;
A substrate placing step of placing the substrate on the heater by lowering the substrate supporting part in a state where the heater is preheated;
A gas supply step of supplying a reaction gas into the reaction chamber while rotating the mounted substrate inside the reaction chamber to process the substrate;
A gas exhausting step of exhausting the reaction gas from the inside of the reaction chamber;
A substrate lifting step of lifting the substrate supporting part to detach the substrate placed on the heater; And
A substrate carrying-out step of taking out the plurality of substrates to the outside while gradually lowering the heating part; And depositing a thin film on the substrate.
KR1020150053050A 2015-04-15 2015-04-15 Apparatus for depositing film with vertically stacked heaters and method for depositing film using it KR101625478B1 (en)

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KR20200137050A (en) * 2018-05-02 2020-12-08 어플라이드 머티어리얼스, 인코포레이티드 Placement substrate support with a curved substrate function
KR20230103513A (en) 2021-12-31 2023-07-07 주식회사 한화 Layer deposition apparatus having multi-stage heaters and layer deposition method using the same
KR20230103521A (en) 2021-12-31 2023-07-07 주식회사 한화 Layer deposition apparatus having multi-stage heaters and layer deposition method using the same
KR20230144361A (en) 2022-04-07 2023-10-16 주식회사 한화 Gas injection apparatus and substrate processing equipment using the same

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KR101382375B1 (en) 2011-12-09 2014-04-08 도쿄엘렉트론가부시키가이샤 Vertical cvd apparatus

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200137050A (en) * 2018-05-02 2020-12-08 어플라이드 머티어리얼스, 인코포레이티드 Placement substrate support with a curved substrate function
KR102516087B1 (en) * 2018-05-02 2023-03-29 어플라이드 머티어리얼스, 인코포레이티드 Batch board support having a bent board function
US11784075B2 (en) 2018-05-02 2023-10-10 Applied Materials, Inc. Batch substrate support with warped substrate capability
KR20230103513A (en) 2021-12-31 2023-07-07 주식회사 한화 Layer deposition apparatus having multi-stage heaters and layer deposition method using the same
KR20230103521A (en) 2021-12-31 2023-07-07 주식회사 한화 Layer deposition apparatus having multi-stage heaters and layer deposition method using the same
KR20230144361A (en) 2022-04-07 2023-10-16 주식회사 한화 Gas injection apparatus and substrate processing equipment using the same

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