KR20150018910A - Cluster-batch type system for processing substrate - Google Patents

Cluster-batch type system for processing substrate Download PDF

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Publication number
KR20150018910A
KR20150018910A KR20130044284A KR20130044284A KR20150018910A KR 20150018910 A KR20150018910 A KR 20150018910A KR 20130044284 A KR20130044284 A KR 20130044284A KR 20130044284 A KR20130044284 A KR 20130044284A KR 20150018910 A KR20150018910 A KR 20150018910A
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South Korea
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substrate processing
substrate
unit
gas
batch type
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KR20130044284A
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Korean (ko)
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이병일
이태완
유한길
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주식회사 테라세미콘
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Priority to KR20130044284A priority Critical patent/KR20150018910A/en
Priority to PCT/KR2014/002837 priority patent/WO2014175573A1/en
Priority to TW103112832A priority patent/TW201500269A/en
Publication of KR20150018910A publication Critical patent/KR20150018910A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67766—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67769—Storage means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • H01L21/67781—Batch transfer of wafers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/137—Associated with semiconductor wafer handling including means for charging or discharging wafer cassette

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Robotics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

A clustered batch substrate processing system is disclosed. The clustered batch type substrate processing system according to the present invention comprises a substrate carry-in part (1) into which a substrate (40) is loaded; A plurality of batch type substrate processing apparatuses (9: 9a, 9b, 9c, 9d) arranged horizontally in accordance with the batch path (P) and disposed on one side or both sides of the batch path (P); A substrate transfer robot 7 which moves along the arrangement path P from the substrate loading section 1 and performs loading / unloading of the substrate 40 to the batch type substrate processing apparatuses 9 (9a, 9b, 9c, 9d) ). ≪ / RTI >

Description

[0001] CLUSTER-BATCH TYPE SYSTEM FOR PROCESSING SUBSTRATE [0002]

The present invention relates to a clustered batch substrate processing system. More particularly, the present invention relates to a clustered batch type substrate processing system in which a plurality of batch type substrate processing apparatuses are disposed horizontally along a placement path to maximize substrate processing efficiency and productivity.

In order to manufacture a semiconductor device, a process of depositing a necessary thin film on a substrate such as a silicon wafer is essential. Sputtering, chemical vapor deposition (CVD), and atomic layer deposition (ALD) are mainly used for the thin film deposition process.

The sputtering technique is a technique of causing argon ions generated in a plasma state to collide with the surface of a target, and causing a target material, which is detached from the surface of the target, to be deposited as a thin film on the substrate. The sputtering method has an advantage that a high purity thin film having excellent adhesion can be formed, but there is a limit to form a fine pattern having a high aspect ratio.

Chemical vapor deposition is a technique of depositing a thin film on a substrate by injecting various gases into the reaction chamber and chemically reacting gases induced by high energy such as heat, light or plasma with the reaction gas. The chemical vapor deposition method has a problem in that the thermodynamic stability of the atoms is very difficult to control due to the rapid chemical reaction and the physical, chemical and electrical properties of the thin film are deteriorated.

The atomic layer deposition technique is a technique of alternately supplying a source gas and a purge gas, which are reactive gases, and depositing a thin film on an atomic layer basis on a substrate. Since atomic layer deposition utilizes surface reactions to overcome the limitations of step coverage, it is suitable for forming fine patterns having a high aspect ratio and has excellent electrical and physical properties of the thin film.

The atomic layer deposition apparatus can be classified into a batch type in which a substrate is loaded one by one in a chamber and a batch type in which a plurality of substrates are loaded in a chamber and a deposition process is collectively performed.

1 is a side cross-sectional view showing a conventional batch atomic layer deposition system.

2 is a perspective view showing a substrate processing apparatus 8 of a conventional batch atomic layer deposition system.

Referring to FIGS. 1 and 2, a conventional batch atomic layer deposition system includes a FOUP (Front Opening Unified Pod) 4 including a plurality of substrates 40 through a load port 2, And can be stored in the FOUP stocker (3). The FOPS 4 mounted on the loose mounting bracket 3a of the loose mounting portion 3 are held by the FOPS 5 moving along the vertically extending FOUP transfer robot rail 5a, Interface Mechanical Standard) door unit 6. As shown in Fig. The substrate transfer robot 7 unloads the substrate 40 using the transfer fork 7a in the FOUP 4 'having one side opened after being brought into close contact with the FIMS door unit 6 and transfers the substrate transfer robot rail 7b The substrate transfer robot 7 can be moved downward to stack the substrate 40 on the support bar 55 of the boat 50. [

The substrate processing apparatus 8 of the conventional batch atomic layer deposition system may include a process tube 10 that forms the chamber 11 in which the substrate 40 is loaded and the deposition process proceeds. In the process tube 10, components such as a gas supply unit 20, a gas discharge unit 30, and the like necessary for a deposition process may be installed. The boat 50 in which the substrate 40 is laminated can move up and down and the receiving portion 51 is hermetically coupled to the process tube 10 when the boat 50 is lifted, (53) can be inserted.

In the conventional batch atomic layer deposition system, only one substrate processing apparatus 8 is provided to perform the substrate processing process, so that the productivity of the substrate processed per unit time is low. Since the substrate transferring unit 1 and the substrate transfer robot 7 transfer the substrate 40 only to one substrate processing apparatus 8, the operation efficiency is low and a problem occurs in the substrate processing apparatus 8, There is a problem that the entire batch atomic layer deposition system must be shut down.

In addition, the substrate processing apparatus 8 of the conventional batch atomic layer deposition system as described above may have a chamber 11 space of a height at which about 100 substrates 40 can be accommodated. Accordingly, since a large amount of process gas must be supplied to fill the chamber 11 in order to perform the deposition process, the time consumed for supplying the process gas and the waste of the process gas are increased, and after the deposition process, There is a problem that the time consumed to discharge a large amount of the process gas is increased.

Further, there is a problem in that it is difficult to control the source gas and the purge gas in order to perform atomic layer deposition on all the about 100 substrates 40 laminated in the unnecessarily large chamber 11, There is a problem in that the atomic layer deposition is performed only on the substrate 40.

In order to solve the above problem, the substrate 40 is disposed only at a specific position where the atomic layer deposition can be performed completely, and a part (about 25 The substrate 40 is subjected to atomic layer deposition. However, this method has not solved the problem of waste of the process gas and time-consuming process for discharging the process gas.

If the height of the chamber 11 is reduced so that about 25 substrates 40 can be accommodated in order to reduce the space of the chamber 11 by reducing the space of the chamber 11, And thus it is not helpful to improve the productivity of the batch type atomic layer deposition system.

2, the substrate processing apparatus 8 of the conventional batch atomic layer deposition system is arranged such that the distance d1 'between the substrate 40 and the inner circumferential surface of the process tube 10 is smaller than the distance d1' (D1 '> d2') which is larger than the distance d2 'between the supply portions 20. That is, in the conventional batch type atomic layer deposition apparatus, components such as the gas supply unit 20 and the gas discharge unit 30 are provided in the interior (or the chamber 11) of the process tube 10, The volume of the inner chamber 11 becomes unnecessarily large.

In addition, a conventional atomic layer deposition apparatus generally uses a vertically-shaped process tube 10 as an ideal form for easily holding the pressure inside the chamber 11, and the upper space 12 of the vertically- It takes a lot of time to supply and discharge the process gas and waste of the process gas.

SUMMARY OF THE INVENTION The present invention has been made in order to solve all the problems of the prior art as described above, and it is an object of the present invention to provide a cluster type batch type substrate processing system in which a plurality of batch type substrate processing apparatuses are arranged to maximize substrate processing efficiency and productivity do.

In addition, the present invention minimizes the size of the internal space of the batch type substrate processing apparatus in which the substrate processing process is performed, thereby reducing the amount of substrate processing gas used in the substrate processing process, And to provide a clustered batch type substrate processing system in which the substrate processing time is drastically reduced.

According to an aspect of the present invention, there is provided a clustered batch type substrate processing system including: a substrate carrying portion into which a substrate is loaded; A plurality of batch type substrate processing apparatuses disposed horizontally along a placement path and disposed on one side or both sides of the placement path; And a substrate transfer robot moving along the arrangement path from the substrate loading section and performing loading / unloading of the substrate in the batch type substrate processing apparatus.

According to the present invention configured as described above, a plurality of batch type substrate processing apparatuses are arranged, thereby maximizing the efficiency of substrate processing and productivity.

Further, the present invention is effective in that a plurality of batch type substrate processing apparatuses are arranged, and a substrate processing process can be performed through the remaining batch type substrate processing apparatus even if a problem occurs in any one batch type substrate processing apparatus.

Further, the present invention minimizes the size of the internal space of the batch type substrate processing apparatus in which the substrate processing process is performed, thereby reducing the amount of substrate processing gas used in the substrate processing process, thereby reducing the cost of the substrate processing process .

Further, the present invention minimizes the size of the internal space of the batch type substrate processing apparatus in which the substrate processing process is performed, thereby smoothly supplying and discharging the substrate processing gas used in the substrate processing process, The productivity of the substrate processing process can be improved.

1 is a side cross-sectional view showing a conventional batch atomic layer deposition system.
2 is a perspective view showing a substrate processing apparatus of a conventional batch atomic layer deposition system.
3 is a side cross-sectional view illustrating a clustered batch substrate processing system in accordance with one embodiment of the present invention.
4 is a top section view showing a clustered batch substrate processing system according to one embodiment of the present invention.
5 is a perspective view showing a batch type substrate processing apparatus according to an embodiment of the present invention.
6 is a partially exploded perspective view of Fig.
7 is a top cross-sectional view of a batch type substrate processing apparatus according to an embodiment of the present invention.
8 is an enlarged perspective view of a gas supply unit and a gas discharge unit according to an embodiment of the present invention.
9 is a perspective view illustrating a batch type substrate processing apparatus in which a reinforcing rib is coupled to an upper surface according to an embodiment of the present invention.
10 is a perspective view showing a batch type substrate processing apparatus provided with a heater on an outer surface according to an embodiment of the present invention.
11 is a side cross-sectional view illustrating a clustered batch substrate processing system in which a batch substrate processing apparatus according to an embodiment of the present invention is doubly stacked.

The following detailed description of the invention refers to the accompanying drawings, which illustrate, by way of illustration, specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It should be understood that the various embodiments of the present invention are different, but need not be mutually exclusive. For example, certain features, structures, and characteristics described herein may be implemented in other embodiments without departing from the spirit and scope of the invention in connection with an embodiment. It is also to be understood that the position or arrangement of the individual components within each disclosed embodiment may be varied without departing from the spirit and scope of the invention. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is to be limited only by the appended claims, along with the full scope of equivalents to which such claims are entitled, if properly explained. In the drawings, like reference numerals refer to the same or similar functions throughout the several views, and length and area, thickness, and the like may be exaggerated for convenience.

In this specification, the substrate may be understood as including a substrate used for a semiconductor substrate, an LED, a display device such as an LCD, a solar cell substrate, and the like.

In the present specification, the substrate processing step means a deposition step, preferably a deposition step using an atomic layer deposition method, but the present invention is not limited thereto, and includes a deposition process using a chemical vapor deposition process, a heat treatment process, and the like . However, the following description assumes a deposition process using an atomic layer deposition method.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a batch type apparatus according to embodiments of the present invention will be described in detail with reference to the accompanying drawings.

3 is a side cross-sectional view illustrating a clustered batch substrate processing system according to one embodiment of the present invention, and FIG. 4 is a top cross-sectional view illustrating a clustered batch substrate processing system according to one embodiment of the present invention.

3 and 4, a clustered batch type substrate processing system according to an embodiment of the present invention includes a substrate carry section 1, 2, 3, 5, 6, a substrate transfer robot 7, and a placement path P (9: 9a, 9b, 9c, 9d) arranged horizontally in accordance with the substrate processing apparatus (9). In the present specification, the placement path P is a horizontally elongated space in which the horizontal substrate transfer robot rails 7c for horizontally moving the substrate transfer robot 7 are disposed, or horizontally long, Can be understood as meaning a space in contact with one side of the food processing apparatuses 9a, 9b, 9c, 9d. Since the configurations of the substrate carry-in unit 1 and the substrate transfer robot 7 belong to the well-known technical category of the related art, the detailed description of the features other than the main configuration will be omitted below.

The substrate carry-in unit 1 collectively refers to a configuration in which the substrate 40 is transferred from the outside to the substrate transfer robot 7. The substrate carrying portion 1 may include a load port 2, a FOUP stocker 3, a FOUP transfer robot 5 and a FIMS door portion 6.

A FOUP (Front Opening Unified Pod) 4 including a plurality of substrates 40 may be transferred to the load port 2 through an external foil conveyor system (not shown) to be seated.

The looper loading part 3 can provide a place to wait for the FOUP 4 loaded through the load port 2 to be placed on the plurality of loose loading bobs 3a before the substrate processing process. As an example, fourteen FOUPs 4 may be loaded in the loose holding portion 3. [

The FOUP transfer robot 5 transfers the FOUP 4 mounted on the load port 2 to the loose loading unit 3 or the FOPS loaded on the looper loading unit 3 by FIMS Mechanical Standard) door unit 6 as shown in FIG. The FOUP transfer robot 5 can move up or down or rotate along the vertically extended FOUP transfer robot rail 5a.

The FIMS door portion 6 can provide a passage for transferring the substrate 40 inside the FOUP 4 from the clean state to the batch type substrate processing apparatus 9. [ The FOUP door 4 can be hermetically coupled to the FIMS door unit 6 by the FOX transfer robot 5 transferred to the FIMS door unit 6 from the Foil loading unit 3. In this state, one side of the FOUP door 4 'that is in close contact with the FIMS door 6 is opened, and the substrate 40 can be taken out by the substrate transfer robot 7 through the open side.

The substrate transfer robot 7 can perform loading / unloading of the loaded substrate 40 into the batch type substrate processing apparatus 9 through the substrate loading section 1 (i.e., the FIMS door section 6) . The substrate transfer robot 7 can move vertically or vertically along the vertically extending vertical substrate transfer robot rail 7b and can transfer the horizontal substrate transfer robot rail 7c horizontally extending along the arrangement path P, The horizontal motion can be performed. The substrate transfer robot 7 can also include five transfer forks 7a to load five substrates 40 at a time into the boat 500 of the batch type substrate processing apparatus 9 to shorten the processing time There is an advantage to be able to.

The clustered batch substrate processing system of the present invention is characterized by comprising a plurality of batch type substrate processing apparatuses (9) arranged horizontally in accordance with the batch path (P). The batch type substrate processing apparatus 9 may be disposed on one side or both sides with respect to the placement path P. [ In other words, two batch type substrate processing apparatuses 9 are arranged symmetrically (refer to 9a and 9c, 9b and 9d in FIG. 4) or one batch type substrate processing apparatus 9 may be arranged (i.e., asymmetrically arranged). 3 and 4, the batch type substrate processing apparatuses 9 are arranged on both sides with respect to the placement path P (that is, 9a and 9c, 9b and 9d are symmetrically arranged) .

Each of the batch type substrate processing apparatuses 9a, 9b, 9c and 9d includes a substrate processing unit 100, a gas supply unit 200, a gas discharge unit 300, a housing 400, (500). Unlike the conventional technique in which the substrate carrying unit 1 and the substrate transfer robot 7 performed the substrate processing process corresponding to only one substrate processing apparatus 8, There is an advantage that the productivity is greatly increased in proportion to the number of the batch type substrate processing apparatuses 9 arranged in a row.

4, each of the batch type substrate processing apparatuses 9a, 9b, 9c, and 9d protrudes to both sides, so that the problem can be solved by the batch type substrate processing apparatuses 9a, 9b, 9c, and 9d The user enters the doors M1, M2, M3, and M4 on the side doors (not shown) to easily perform repair, management, and the like. Thus, the batch type substrate processing apparatuses 9a, 9d can be arranged such that all the components including the door (not shown) can be equally arranged, and the batch type substrate processing apparatuses 9b, The components can be arranged identically. In other words, with respect to the direction in which the substrate 40 is loaded / unloaded, a door (not shown) is formed so that the batch type substrate processing apparatuses 9a and 9d can enter from the left side (M1 and M4) The substrate processing apparatuses 9b and 9c are provided with doors (not shown) so that they can enter from the right side (M2 and M3). Therefore, the batch type substrate processing apparatuses 9a and 9d and the batch type substrate processing apparatuses 9b, 9c may have a symmetrical shape with respect to each other.

Referring again to Figures 3 and 4, the substrate loading portion 1 of the clustered batch substrate processing system of the present invention is configured to cool the unloaded substrate 40 after the substrate processing process in the batch substrate processing apparatus 9 And a cooling unit CS1 for cooling the exhaust gas. The present invention is capable of cooling a large amount of the substrate 40 as much as the number of the substrates 40 to be processed in the plurality of batch type substrate processing apparatuses 9 is increased so much that the present invention Of the present invention. Therefore, the cooling unit CS1 is further provided with at least one FIMS door unit 6 ', whereby the substrate 40 unloaded from the batch type substrate processing apparatus 9 can be transferred to the FIMS door 6 through the substrate transfer robot 7. [ 3 and 4, the FOUP 4 "is disposed in the cooling section CS1 to cool the substrate 40. The FOUP 4 " (Not shown) other than the FOUP 4 "to house the substrate 40. The cooling unit CS1 also includes a fan unit (not shown) for increasing the cooling efficiency (Not shown), and the like.

The clustered batch substrate processing system of the present invention may further include a cooling chamber CS2 in addition to the cooling portion CS1 to cool the substrate 40 after the substrate processing process. The cooling chamber CS2 may be disposed at the end of the placement path P, that is, at the opposite end of the placement path P abutting the substrate carry-in part 1. [ The cooling chamber CS2 may further include a fan unit (not shown) and a ventilation pipe (not shown) for accommodating the substrate 40 by providing a boat (not shown) to improve the cooling efficiency. By providing the cooling chamber CS2, it is possible to cool a larger amount of the substrate 40, which is advantageous in further improving productivity and efficiency.

Hereinafter, the configuration of the batch type substrate processing apparatus 9 will be described in detail.

Fig. 5 is a perspective view showing a batch type substrate processing apparatus 9 according to an embodiment of the present invention, Fig. 6 is a partially exploded perspective view of Fig. 5, Fig. 7 is a perspective view of a batch type substrate processing apparatus 8 is an enlarged perspective view of a gas supply unit 200 and a gas discharge unit 300 according to an embodiment of the present invention.

Referring to Figs. 5 to 7, the batch type substrate processing apparatus 9 according to the present embodiment includes a substrate processing section 100 and a gas supply section 200.

The function of the substrate processing unit 100 may be referred to as a process tube. The substrate processing unit 100 accommodates the substrate stacking unit 500 in which a plurality of substrates 40 are stacked and provides a chamber space 110 capable of performing a substrate processing process such as a deposition film forming process. The batch substrate processing apparatus 9 of the present invention can be less than half the height of the conventional batch substrate processing apparatus 8 in order to minimize the chamber space 110 to prevent waste of the process gas and to increase the yield of the product have. Therefore, it is needless to say that the chamber space 110 is less than half the size of the chamber space 11 shown in Figs.

The substrate processing unit 100 may be made of at least one of quartz, stainless steel, aluminum, graphite, silicon carbide, or aluminum oxide.

According to one embodiment of the present invention, it is most preferable that 25 substrates 40 be processed in the chamber space 110 of the substrate processing unit 100, but within the range where the object of the present invention can be achieved, To 64 substrates 40 may be processed. If the number of the substrates 40 is less than four, the productivity and efficiency of the substrate 40 are lowered. If the number of the substrates 40 is greater than 64, Such as a batch-type atomic layer deposition system of the present invention. The user may improve the yield by inserting a predetermined dummy substrate 41 at the top, bottom, or specific position of the stacked substrate 40.

The substrate processing apparatus 8 of the conventional batch type atomic layer deposition system has a chamber 11 space in which about 100 substrates 40 can be accommodated but about 25 to 30 substrates 40 may be processed. Considering the preferred embodiment of the present invention, in which 25 substrates 40 are processed in one substrate processing apparatus 9, a plurality of batch type substrate processing apparatuses 9a, 9b, 9c, Since 100 substrates 40 can be processed in the process, there is an advantage that the productivity is significantly improved as compared with the conventional batch atomic layer deposition system.

In addition, the amount of the process gas supplied to the chamber 110, which is reduced to less than half of the conventional one, is reduced, and the time for discharging the process gas existing in the chamber 110 after the deposition process is also reduced.

Further, since it is easy to control the source gas and the purge gas for performing the atomic layer deposition in the chamber 110 which is reduced to about half of the conventional one, there is an advantage that the yield and quality of the substrate 40 on which the substrate processing process is completed are improved.

The gas supply unit 200 provides a space 210 in which at least one gas supply channel 250 is accommodated and is formed to protrude from the outer circumferential surface of one side of the substrate processing unit 100, The substrate processing gas can be supplied. Here, the gas supply passage 250 is a passage through which the substrate processing gas is supplied from the outside and can be supplied to the inside of the substrate processing section 100, and may have a shape such as a tube, a hollow It is preferable that it is composed of a tube for precise control of the supply amount of the substrate processing gas. Hereinafter, it is assumed that the three gas supply pipes 251 constitute the gas supply flow channel 250.

The gas processing unit 100 is provided with a space 310 in which at least one gas discharge path 350 is accommodated and is formed to protrude from the outer circumferential surface of the other side of the substrate processing unit 100 The substrate processing gas introduced into the inner space 110 of the substrate processing apparatus 100 can be discharged. Here, the gas discharge passage 350 is a passage through which the substrate processing gas in the substrate processing unit 100 can be discharged to the outside, and can have a shape such as a tube, a hollow hole, It is preferable that it is constituted of a tube having a larger diameter than the gas supply pipe 251 for smooth discharge of gas. Meanwhile, the gas discharge passage 350 may be formed in a hollow shape without the gas discharge pipe 351, and the pump may be connected to the gas discharge passage 350 to pump the substrate processing gas and discharge the substrate. In the following description, it is assumed that one gas discharge pipe 351 constitutes the gas discharge passage 350. FIG.

The outer circumferential surface of the substrate processing unit 100 may be integrally connected to the outer circumferential surface of the gas supply unit 200. The outer circumferential surface of the substrate processing unit 100 may be integrally connected to the outer circumferential surface of the gas discharging unit 300. The gas supply unit 200 and the gas discharge unit 300 are preferably made of the same material as the substrate processing unit 100. The substrate processing unit 100, the gas supply unit 200 and the gas discharge unit 300 are separately manufactured by separately manufacturing the substrate processing unit 100, the gas supply unit 200, and the gas discharge unit 300, A welding method, or the like. After the substrate processing unit 100 having a predetermined thickness is first formed, the substrate processing unit 100 is cut off from the substrate processing unit 100 except for the protruding portions on one side and the other side of the substrate processing unit 100, 200 and the gas discharging unit 300 may be integrally formed.

The batch type substrate processing apparatus 9 according to the present embodiment may further include a housing 400 and a substrate loading unit 500. The housing 400 is formed in a cylindrical shape with one side protruded so as to cover the substrate processing unit 100 and the gas supply unit 200 and the upper surface side of the housing 400 is provided with a disposable substrate processing apparatus 9a And 9b, respectively. Referring to FIG. 7, the housing 400 includes an outer periphery of the substrate processing unit 100 and a gas supply unit 200 to serve as an insulator for creating a thermal environment of the substrate processing unit 100 and the gas supply unit 200 The unitary body 410 may have a bulk shape in which one side and the other side are protruded so as to surround the other side and a circular ring-shaped unit body 410 in which one side and the other side are protruded in the vertical direction. The outermost side 420 of the housing 400 may be made of SUS, Aluminum or the like. In addition, a heater 430 formed by continuously connecting bent portions (e.g., "?" Or "?" Shapes) may be provided on the inner side surface of the housing 400.

The substrate loading unit 500 is installed to be elevated by a known elevator system (not shown) and includes a main receiving unit 510, an auxiliary receiving unit 520, and a substrate supporting unit 530.

The main receiving portion 510 is formed in a substantially cylindrical shape and can be seated on the bottom of the batch type substrate processing apparatuses 9a, 9b, 9c and 9d, and the upper surface of the main receiving portion 510 is connected to the lower end side of the housing 400 (Not shown).

The auxiliary receiving portion 520 is formed in a substantially cylindrical shape and is formed on the upper surface of the main receiving portion 510 and has a smaller diameter than the inner diameter of the substrate processing portion 100, and inserted into the internal space 110 of the substrate processing portion 100 do. The auxiliary support unit 520 may be rotatably installed in association with a motor (not shown) so that the substrate 40 may be rotated during a substrate processing process to ensure uniformity of the semiconductor manufacturing process. An auxiliary heater (not shown) may be installed in the auxiliary support unit 520 to apply heat from the lower side of the substrate 40 during the substrate processing process to ensure process reliability. The substrate 40 stored in the boat 500 may be preheated by the auxiliary heater before the substrate processing process.

A plurality of the substrate supporting portions 530 are provided along the edge portion of the auxiliary supporting portion 520 with an interval therebetween. A plurality of support grooves are formed on the inner surface of the substrate supporter 530 facing the center of the auxiliary supporter 520 so as to correspond to each other. The edge of the substrate 40 is inserted into and supported by the support groove so that the plurality of substrates 40 carried by the substrate transfer robot 7 through the substrate loading unit 1 are stacked vertically And stored in the boat 500.

The substrate stacking part 500 is detachably coupled to the lower end surface of the manifold 450 to which the upper end surface is coupled to the lower end surface of the substrate processing part 100 and the lower end surface of the gas supply part 200 . The gas supply connection pipe 253 extending from the gas supply pipe 251 constituting the gas supply channel 250 of the gas supply unit 200 is inserted into and communicated with the gas supply communication hole 451 of the manifold 450, The gas discharge connection pipe 353 extending from the gas discharge pipe 351 constituting the gas discharge passage 350 of the gas discharge unit 300 is inserted into and communicated with the gas discharge communication hole 455 of the manifold 450 . When the upper surface of the main receiving part 510 of the substrate loading part 500 is coupled to the lower end surface side of the manifold 450 by the substrate mounting part 500, Is loaded into the inner space 110, and the substrate processing unit 100 can be hermetically sealed. A sealing member (not shown) may be interposed between the manifold 450 and the main receiving portion 510 of the substrate mounting portion 500 for stable sealing.

6 and 7, the substrate processing unit 100 is disposed concentrically with the housing 400 and disposed inside the housing 400. The housing 400 includes the substrate processing unit 100, the gas supply unit 200 And the gas discharging unit 300, as shown in FIG.

The gas supply passage 250 may be accommodated in the inner space 210 of the gas supply unit 200. 7 and 8A, the gas supply passage 250 includes a plurality of gas supply pipes 251 formed along the longitudinal direction of the gas supply unit 200 and a gas supply pipe 251 And a plurality of discharge holes 252 formed at one side of the discharge hole 252. A plurality of discharge holes 252 are formed in each gas supply pipe 251. The gas supply connection pipe 253 communicated with the gas supply pipe 251 is inserted into and connected to the gas supply communication hole 451 formed in the manifold 450.

The gas discharge passage 350 may be accommodated in the inner space 310 of the gas discharge portion 300. 7 and 8B, the gas discharge passage 350 includes a gas discharge tube 351 formed along the longitudinal direction of the gas discharge portion 300 and a gas discharge tube 351 toward the substrate processing portion 100. [ And a plurality of discharge holes 352 formed at one side of the discharge port 352. A plurality of discharge holes 352 are formed in the gas discharge pipe 351. The gas discharge connection pipe 353 communicated with the gas discharge pipe 351 is inserted into and communicated with the gas discharge communication hole 455 formed in the manifold 450.

The discharge hole 252 and the discharge hole 352 are formed in the substrate processing part 100 when the substrate mounting part 500 is coupled to the manifold 450 so that when a plurality of substrates 40 are accommodated in the substrate processing part 100, The substrate 40 is uniformly supplied to the substrate 40 and the substrate 40 is placed in the gap between the adjacent substrate 40 and the substrate 40 supported on the substrate supporter 530 so that the substrate processing gas can be easily sucked and discharged to the outside. .

The gas supply unit 200 and the gas discharge unit 300 are formed so as to protrude from the outer circumferential surface of the substrate processing unit 100 so that the distance between the substrate 40 and the inner circumferential surface of the substrate processing unit 100, And the distance d2 between the gas supply passage 250 may be equal or larger. That is, the gas supply unit 20 or the gas discharge unit 30 is disposed in the internal space 11 of the process tube 10 in which the substrate processing process is performed, Unlike the prior art in which the distance d1 'between the inner circumferential surfaces has a value d1'> d2 'larger than the distance d2' between the substrate 40 and the gas supply part 20, The gas supply unit 200 or the gas discharge unit 300 is disposed outside the substrate processing unit 100 so that the size of the internal space 110 of the substrate processing unit 100 can be reduced 500) can be accommodated (or the minimum size at which the substrate 40 can be accommodated). Therefore, not only is there an advantage of reducing the amount of substrate processing gas used due to the reduction of the size of the internal space 110 of the substrate processing part 100 where the substrate processing step is performed, and consequently the cost of the substrate processing process, And the reduction of the discharge time and the productivity of the substrate processing process are improved.

9 is a perspective view showing a batch type substrate processing apparatus 9 in which reinforcing ribs 120 and 130 are coupled to an upper surface according to an embodiment of the present invention.

The substrate processing unit 100 of the batch type substrate processing apparatus 9 of the present invention has a columnar shape and the top surface can be flat have. The upper surface of the substrate processing section 100 is made flat so that the upper space 12 (see FIGS. 1 and 2) of the vertical chamber 11 in which the substrate 40 can not be accommodated is eliminated, There is an advantage that the size of the space 110 is further reduced. However, in order to solve the problem of durability that can occur due to the inability to evenly distribute the internal pressure as compared with the conventional vertical chamber 11, the batch type substrate processing apparatus 9 of the present invention is provided with the substrate processing unit 100 And a plurality of reinforcing ribs (120, 130) are coupled on the upper surface.

The material of the reinforcing ribs 120 and 130 may be the same as the material of the substrate processing unit 100. However, the material of the reinforcing ribs 120 and 130 is not limited to the material of the substrate processing unit 100, You can do it.

The reinforcing ribs 120 and 130 may be disposed on the upper surface of the substrate processing unit 100 so as to cross the plurality of reinforcing ribs 121 and 122 as shown in FIG. A plurality of reinforcing ribs 131 and 132 may be arranged in parallel to be coupled to the upper surface of the substrate processing unit 100. [ The reinforcing ribs 120 and 130 can be coupled to the upper surface of the substrate processing unit 100 using a welding method or the like.

10 is a perspective view showing a batch type substrate processing apparatus 9 provided with heaters 150 and 160 on the outer surface thereof according to an embodiment of the present invention.

5, the heater 430 may be installed on the inner side of the housing 400, or may be provided on the inner side of the housing 400, without the heater 430 being installed on the inner side of the housing 400, Heaters 150 and 160 for heating the substrate 40 may be installed on the upper and outer circumferential surfaces of the substrate 40. Although not shown, a heater may be provided on the upper and outer circumferential surfaces of the gas supply unit 200 and the gas discharge unit 300 as needed.

The heaters 150 and 160 may be formed in a plate shape to efficiently transfer heat to the inner space 110 of the substrate processing unit 100 and may be formed of any one selected from a graphite or a carbon composite have. Alternatively, the heaters 150 and 160 may be formed of any one selected from the group consisting of silicon carbide and molybdenum, or may be formed of Kanthal.

11 is a side cross-sectional view showing a clustered batch substrate processing system in which a batch substrate processing apparatus 9 according to an embodiment of the present invention is stacked in a double layer. Fig. 11 is a sectional view of the clustered batch substrate of Figs. 3 and 4, except that the batch type substrate processing apparatuses 9a 'and 9b' are stacked on top of the batch type substrate processing apparatuses 9a and 9b, The description thereof will be omitted.

Since the chamber space 11 of the batch type substrate processing apparatuses 9a, 9a ', 9b and 9b' is smaller than the half of the chamber space 11 compared with the conventional substrate processing apparatus 8, There is no significant difference in height from the substrate processing apparatus 8. [ Therefore, the batch type substrate processing apparatuses 9a, 9a ', 9b, 9b' having the same configuration on the upper part and the lower part can be stacked in a double manner to further improve the productivity.

As described above, the clustered batch type substrate processing system of the present invention can maximize the productivity of the substrate processing by arranging a plurality of batch type substrate processing apparatuses 9 horizontally according to the arrangement path P, The process cost can be saved and the supply and discharge time of the substrate processing gas can be shortened and the efficiency of the process can be improved.

Further, by providing the cooling unit CS1 and the cooling chamber CS2, which are spaces in which a large amount of substrates 40 to be subjected to substrate processing can be smoothly cooled, productivity and process efficiency of the substrate processing can be further improved.

The gas supply unit 200 and the gas discharge unit 300 that accommodate the gas supply channel 250 and the gas discharge channel 350 are disposed separately from the substrate processing unit 100 on which the substrate processing process is performed, By forming the upper part of the processing part 100 flat, the size of the internal space 110 of the substrate processing part 100 can be minimized, thereby improving productivity and process efficiency of the substrate processing.

By minimizing the size of the internal space 110 of the batch type substrate processing apparatus 9, it becomes easy to control the source gas and the purge gas for performing the atomic layer deposition, so that the yield and quality of the product can be improved.

The substrate transfer robot 7 transfers the substrate 40 to the plurality of batch type substrate processing apparatuses 9a, 9b, 9c and 9d so that the operation efficiency is good and any one of the batch type substrate processing apparatuses 9a and 9b 9b, 9c, and 9d to stop the operation of the entire system when the apparatus is stopped, and each batch type substrate processing apparatus 9a (9a, 9c, 9d) M1, M2, M3, and M4 through the door (not shown) on the sides of the first, second, third, and fourth sides 9a, 9b, 9c, and 9d.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken in conjunction with the present invention. Variations and changes are possible. Such variations and modifications are to be considered as falling within the scope of the invention and the appended claims.

1: substrate carrying portion
2: load port
3: FOUP stocker
4, 4 ', 4 ": FOUP (FOUP)
5: Transfer robot
6, 6 ': FIMS door part
7: Substrate transfer robot
8, 9: batch type substrate processing apparatus
40: substrate
100: substrate processing section
110: space inside the substrate processing section
120, 130: reinforcing rib
150, 160: heater
200: gas supply part
250: gas supply line
251: gas supply pipe
252: Discharge ball
300: gas discharge portion
350: gas discharge passage
351: gas discharge pipe
352: Exhaust hole
400: housing
450: manifold
500: substrate loading section
d1: distance between the substrate and the inner peripheral surface of the substrate processing section
d2: distance between the substrate and the gas supply passage
P: Batch path
CS1: Cooling section
CS2: Cooling chamber

Claims (21)

A substrate carrying portion into which a substrate is carried;
A plurality of batch type substrate processing apparatuses disposed horizontally along a placement path and disposed on one side or both sides of the placement path;
A substrate transfer robot that moves along the arrangement path from the substrate loading portion and performs loading / unloading of the substrate in the batch type substrate processing apparatus,
The substrate processing system further comprising: The method according to claim 1,
Wherein the substrate-
A load port;
A FOUP stocker for storing a FOUP carried through the load port;
A FOUP transfer robot for transferring the FOUP from the load port to the FOUP loading part or for transferring FOUP from the FOUN loading part to the FIMS door part; And
And a FIMS door part for providing a path for taking out the substrate from the FOUP to the substrate transfer robot,
The substrate processing system further comprising: 3. The method of claim 2,
Wherein the substrate-
Further comprising a cooling unit for cooling the unloaded substrate in the batch type substrate processing apparatus. The method according to claim 1,
Further comprising a cooling chamber at the end of the placement path for cooling the substrate unloaded from the batch substrate processing apparatus. The method according to claim 1,
Wherein the substrate transfer robot includes five transfer forks capable of transferring the five substrates. The method according to claim 1,
Wherein the batch type substrate processing apparatus is double stacked on top of the batch type substrate processing apparatus. The method according to claim 1,
The batch type substrate processing apparatus includes:
A substrate processing unit for receiving and processing a plurality of substrates stacked on the substrate mounting unit; And
And a gas supply unit that is formed on an outer circumferential surface of one side of the substrate processing unit and accommodates at least one gas supply channel through which the substrate processing gas flows, and supplies a substrate processing gas to the substrate processing unit,
Wherein the distance d1 between the substrate and the inner peripheral surface of the substrate processing section is d1? D2 when the distance between the substrate and the gas supply passage is d2. 8. The method of claim 7,
Further comprising a gas discharge portion formed on an outer circumferential surface of the other side of the substrate processing portion and accommodating at least one gas discharge flow passage through which the substrate processing gas flows and discharging the substrate processing gas supplied to the substrate processing portion Processing system. 9. The method of claim 8,
The outer circumferential surface of the substrate processing unit is integrally connected to the outer circumferential surface of the gas supply unit,
Wherein the outer circumferential surface of the substrate processing section is integrally connected to the outer circumferential surface of the gas discharge section. 9. The method of claim 8,
Wherein the gas supply channel includes a plurality of gas supply pipes formed along the longitudinal direction of the gas supply part and a plurality of discharge holes formed at one side of the gas supply pipe toward the substrate processing part. The method of claim 10, wherein
Wherein the gas discharge channel includes a gas discharge pipe formed along a longitudinal direction of the gas discharge unit and a plurality of discharge holes formed at a side of the gas discharge pipe toward the substrate processing unit. The method of claim 7, wherein
Wherein the substrate processing unit has a columnar shape and the top surface is flat. 13. The method of claim 12,
And a plurality of reinforcing ribs are coupled to the upper surface of the substrate processing unit. 14. The method of claim 13,
Wherein the plurality of reinforcing ribs are arranged so as to intersect with each other or parallel to each other and are coupled to the upper surface of the substrate processing unit. 8. The method of claim 7,
Wherein a heater is provided on an outer circumferential surface and an upper surface of the substrate processing section. 16. The method of claim 15,
Wherein the heater is formed in a plate shape. 8. The method of claim 7,
The lower surface of the substrate processing section is opened,
A housing having a lower surface opened to surround the substrate processing unit and the gas supply unit,
Further comprising: the substrate loading unit installed so as to be able to load the plurality of substrates onto the substrate processing unit. 18. The method of claim 17,
The substrate mounting part is detachably coupled to a lower end surface of a manifold to which a top end surface is coupled to a lower end surface of the substrate processing part and a lower end surface of the gas supply part while lifting up and down,
Wherein when the substrate stack is coupled to the lower end surface of the manifold, the substrate is loaded into the substrate processing unit. 12. The method of claim 11,
Wherein the discharge hole and the discharge hole are located at a distance between mutually adjacent substrates supported by the substrate stacking portion and the substrate when the substrate stacking portion in which the plurality of substrates are stacked is accommodated in the substrate processing portion The substrate processing system comprising: 8. The method of claim 7,
Wherein the substrate processing unit comprises at least one of quartz, stainless steel (SUS), aluminum, graphite, silicon carbide, or aluminum oxide. ≪ / RTI > 16. The method of claim 15,
Wherein the heater is formed of at least one of graphite, carbon composite, silicon carbide, molybdenum, or Kanthal.
KR20130044284A 2013-04-22 2013-04-22 Cluster-batch type system for processing substrate KR20150018910A (en)

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PCT/KR2014/002837 WO2014175573A1 (en) 2013-04-22 2014-04-02 Cluster-type batch-mode substrate processing system
TW103112832A TW201500269A (en) 2013-04-22 2014-04-08 Cluster-batch type system for processing substrate

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KR102180091B1 (en) * 2020-06-12 2020-11-17 박영규 Vertical diffusion furnace

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KR100444753B1 (en) * 2001-11-14 2004-08-21 국제엘렉트릭코리아 주식회사 Deposition apparatus for manufacturing semiconductor devices
KR100719519B1 (en) * 2005-11-24 2007-05-17 뉴영엠테크 주식회사 Semiconductor manufacturing apparatus for use of hot process
WO2009078351A1 (en) * 2007-12-14 2009-06-25 Ulvac, Inc. Chamber and film-forming apparatus
KR101157192B1 (en) * 2010-08-31 2012-06-20 주식회사 테라세미콘 Batch type appartus for processing a substrate

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