TW201500269A - Cluster-batch type system for processing substrate - Google Patents

Abstract

A cluster-type batch-mode substrate processing system is disclosed. A cluster-type batch-mode substrate processing system according to the present invention comprises a substrate introduction unit into which substrates are introduced; a plurality of batch-mode substrate processing devices arranged horizontally along an arrangement path and arranged on one side or on both sides with reference to the arrangement path; and a substrate transfer robot for moving along the arrangement path from the substrate introduction unit and loading/unloading the substrates onto/from the batch-mode substrate processing devices.

Description

Cluster type batch substrate processing system Field of invention

The present invention relates to a cluster type batch substrate processing system. More specifically, it relates to a cluster type batch substrate processing system in which a plurality of batch type substrate processing apparatuses are horizontally arranged along an arrangement path to maximize the efficiency and productivity of substrate processing.

Background of the invention

In order to manufacture a semiconductor element, a step of vapor-depositing a desired film on a substrate such as a germanium wafer must be performed. The thin film evaporation process mainly employs sputtering, chemical vapor deposition (CVD: Chemical Vapor Deposition), and atomic layer deposition (ALD: Atomic Layer Deposition).

The sputtering method is a technique in which argon ions generated in a plasma state collide with a surface of a target to cause a target material to be detached from the surface of the target to be deposited on the substrate as a thin film. Although the sputtering method has an advantage of being able to form a high-purity film having good adhesion, it has a limit in forming a fine pattern having a high aspect ratio.

The chemical vapor deposition method is to inject various gases into the reaction chamber so that A technique in which a gas induced by a high energy such as heat, light, or plasma is chemically reacted with a reaction gas to evaporate a thin film on a substrate. Since the chemical vapor deposition method utilizes a chemical reaction that is rapidly initiated, it is extremely difficult to control the thermodynamic stability of the atom, and there is a problem that the physical, chemical, and electrical properties of the film are lowered.

The atomic layer vapor deposition method is a technique in which a source gas and a flushing gas as a reaction gas are alternately supplied, and a film of an atomic layer unit is vapor-deposited on a substrate. The atomic layer vapor deposition method utilizes a surface reaction in order to overcome the limit of step coverage, and is therefore suitable for forming a fine pattern having a high aspect ratio, and has an advantage that the electrical characteristics and physical properties of the film are good.

The atomic layer vapor deposition apparatus can be distinguished as follows: in the processing chamber, each of the substrates is loaded one by one to perform a monolithic process of the vapor deposition process; and a plurality of substrates are loaded in the processing chamber, and the batch of the vapor deposition process is collectively summarized. formula.

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a side cross-sectional view showing a conventional batch type atomic layer vapor deposition system.

2 is a perspective view showing a substrate processing apparatus 8 of a conventional batch type atomic layer vapor deposition system.

Referring to FIGS. 1 and 2, a conventional batch type atomic layer evaporation system is a wafer transfer cassette (FOUP, Front Opening Unified Pod) including a plurality of substrates 40 via a load port 2. 4 is carried inside and can be held in the wafer transfer box (FOUP stocker) 3. The wafer transfer cassette 4 placed and held on the wafer transfer cassette stacking station 3a of the wafer transfer cassette stowage portion 3 can be transferred by a wafer transfer cassette along the vertically extending wafer transfer cassette The wafer transfer cassette transfer robot 5 that moves the human track 5a is attached to the door portion 6 of the FIMS (Front-opening Interface Mechanical Standard). After being adhered to the FIMS door portion 6, the substrate transfer robot 4 is unloaded from the wafer transfer cassette 4', and the substrate transfer robot 7 is unloaded along the substrate transfer robot track 7b. 40 is laminated on the support rod 55 of the crucible 50.

The substrate processing apparatus 8 of the conventional batch type atomic layer evaporation system may include a process tube 10 that is loaded with a substrate 40 to form a processing chamber 11 for performing a vapor deposition process. Then, inside the process pipe 10, components such as the gas supply portion 20 and the gas discharge portion 30 required for the vapor deposition process may be provided. The crucible 50 on which the substrate 40 is laminated can be moved up and down. When the crucible 50 rises, the stage portion 51 is hermetically coupled to the process tube 10, and the protruding portion 53 can be inserted into the inside of the process tube 10.

As described above, the batch type atomic layer vapor deposition system requires only one substrate processing apparatus 8 to perform the substrate processing process, and therefore has a problem that the productivity of the substrate to be processed per unit time is low. Then, since the substrate loading unit 1 and the substrate transfer robot 7 transfer the substrate 40 to only one substrate processing apparatus 8, the operation efficiency is low, and when the substrate processing apparatus 8 has a problem and stops, the batch type atomic layer vapor deposition is interrupted. The problem of the overall operation of the system.

Further, the substrate processing apparatus 8 of the conventional batch type atomic layer vapor deposition system as described above can have a processing chamber 11 space capable of accommodating about 100 substrates 40 in height. Therefore, in order to carry out the vapor deposition process, a large amount of process gas that can be filled in the processing chamber 11 is supplied, so that the time consumption required for inducing the process gas supply and the excess consumption of the process gas are increased. After the vapor deposition process, it is present in the processing chamber 11 for discharge. The time cost of a large amount of internal process gas also increases.

Further, when about 100 substrates 40 stacked in the excessively spacious processing chamber 11 are completely subjected to atomic layer vapor deposition, it is difficult to control the source gas and the flushing gas, and as a result, it is caused only to be disposed at a specific position. The substrate 40 has a problem of completely performing atomic layer vapor deposition.

In order to solve such a problem, the substrate 40 is disposed at a specific position where the atomic layer vapor deposition can be completely performed, and the dummy substrate 41 is inserted at a position where the atomic layer vapor deposition is not completely performed, thereby taking a part (about 25 sheets). The substrate 40 is subjected to atomic layer vapor deposition. However, this method cannot solve the problem of excessive consumption of the process gas and an increase in the time required for discharging the process gas.

Further, in order to solve the above problem by reducing the space of the processing chamber 11, the height of the processing chamber 11 can be reduced to accommodate about 25 substrates 40, and the space of the substrate processing apparatus 9 cannot be utilized due to the height reducing portion. The problem of improving the productivity of batch-type atomic layer evaporation systems is not helpful.

In addition, referring to FIG. 2, the substrate processing apparatus 8 of the conventional batch type atomic layer evaporation system has a distance d1′ between the substrate 40 and the inner circumferential surface of the process tube 10 being greater than between the substrate 40 and the gas supply unit 20 . The distance d2' (d1'>d2'). That is, the conventional batch type atomic layer vapor deposition apparatus is provided with a gas supply unit 20, a gas discharge unit 30, and the like in the inside of the process tube 10 (or the processing chamber 11), so that the internal processing chamber 11 of the process tube 10 occurs. The volume of the volume increases unnecessarily.

Further, the conventional atomic layer vapor deposition apparatus generally uses an upright type process tube 10 in order to easily withstand the internal pressure of the processing chamber 11, but the upper processing space of the processing chamber 11 of the upright type is provided for the supply of process gas. When the supply and discharge are consumed for a long time, there is a problem that the process gas is excessively consumed.

Summary of invention

The present invention has been made to solve various problems of the above-described conventional techniques, and an object of the invention is to provide a cluster type batch substrate processing system in which a plurality of batch type substrate processing apparatuses are disposed to maximize the efficiency and productivity of substrate processing.

Moreover, an object of the present invention is to provide a cluster type batch substrate processing system which minimizes the internal space size of a batch type substrate processing apparatus for performing a substrate processing process, and saves the use amount of the substrate processing gas used in the substrate processing process, and The substrate processing gas is smoothly supplied and discharged, and the substrate processing time is revolutionarily reduced.

In order to achieve the above object, a cluster type batch substrate processing system according to an embodiment of the present invention includes a substrate loading unit that is carried into a substrate, and a plurality of batch type substrate processing apparatuses that are horizontally arranged along an arrangement path, and are configured as described above. The path is placed on one side or both sides as a reference, and the substrate transfer robot moves along the arrangement path from the substrate loading unit, and the substrate is loaded/unloaded by the batch type substrate processing apparatus.

According to the present invention thus constituted, a plurality of batch type substrate processing apparatuses are disposed, which has an effect of maximizing the efficiency and productivity of substrate processing. fruit.

Further, in the present invention, a plurality of batch type substrate processing apparatuses are disposed, and even if any one of the batch type substrate processing apparatuses has a problem, the substrate processing process by the remaining batch type substrate processing apparatus can be performed.

Further, in the present invention, since the internal space size of the batch type substrate processing apparatus for performing the substrate processing process is minimized, the amount of use of the substrate processing gas used in the substrate processing process is saved, and thus the effect of saving the substrate processing process cost is achieved.

Furthermore, the present invention minimizes the internal space of the batch type substrate processing apparatus for performing the substrate processing process, and smoothly supplies and discharges the substrate processing gas used in the substrate processing process, thereby revolutionarily reducing the substrate processing time, Therefore, it has the effect of improving the productivity of the substrate processing process.

1‧‧‧Substrate loading department

2‧‧‧Load port

3‧‧‧Fabric transfer box (FOUP stocker)

3a‧‧‧ wafer transfer box stowage station

4, 4', 4" ‧‧‧ wafer transfer box (FOUP)

5‧‧‧ wafer transfer box transfer robot

5a‧‧‧ wafer transfer box transfer robot track

6, 6'‧‧‧FIMS door

7‧‧‧Substrate transfer robot

7a‧‧‧Transfer fork

7b‧‧‧Substrate transfer robot track, vertical Straight substrate transfer robot track

7c‧‧‧Horizontal substrate transfer robot track

8‧‧‧Substrate processing unit

9, 9a, 9b, 9c, 9d‧‧‧ batch type substrate processing device

10‧‧‧Process Tube

11‧‧‧Processing room

20‧‧‧Gas Supply Department

30‧‧‧ gas discharge department

40‧‧‧Substrate

41‧‧‧Dummy substrate

50‧‧‧埠

51‧‧‧Department

53‧‧‧Protruding

55‧‧‧Support rod

100‧‧‧Substrate Processing Department

110‧‧‧Processing room space, processing room, internal space

120, 121, 122, 130, 131, 132‧‧‧ reinforcing ribs

150, 160, 430‧‧ heaters

200‧‧‧Gas Supply Department

210, 310‧‧‧ Space, interior space

250‧‧‧ gas supply flow path

251‧‧‧ gas supply pipe

252‧‧‧Spray hole

253‧‧‧ gas supply connecting pipe

300‧‧‧ gas discharge department

350‧‧‧ gas discharge flow path

351‧‧‧ gas discharge pipe

352‧‧‧Exhaust hole

353‧‧‧ gas discharge connecting pipe

400‧‧‧shell

410‧‧‧Unit

420‧‧‧ outermost profile

430‧‧‧heater

450‧‧‧Management

451‧‧‧ gas supply communication hole

455‧‧‧ gas discharge communication hole

500‧‧‧Substrate stowage department

510‧‧‧Main Department

520‧‧‧Auxiliary Department

530‧‧‧Substrate Support Department

CS1‧‧‧ Cooling Department

CS2‧‧‧ Cooling room

D1, d2, d1', d2’‧‧‧ distance

P‧‧‧Configuration path

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a side cross-sectional view showing a conventional batch type atomic layer vapor deposition system.

2 is a perspective view showing a substrate processing apparatus of a conventional batch type atomic layer vapor deposition system.

3 is a side cross-sectional view showing a cluster type batch substrate processing system according to an embodiment of the present invention.

Fig. 4 is a plan sectional view showing a cluster type batch substrate processing system according to an embodiment of the present invention.

Figure 5 is a diagram showing batch type substrate processing according to an embodiment of the present invention. A perspective view of the device.

Figure 6 is a partially exploded perspective view of Figure 5.

Fig. 7 is a plan sectional view showing a batch type substrate processing apparatus according to an embodiment of the present invention.

Fig. 8a is an enlarged perspective view of a gas supply unit according to an embodiment of the present invention.

Fig. 8b is an enlarged perspective view of a gas discharge portion according to an embodiment of the present invention.

Fig. 9a is a perspective view showing a batch type substrate processing apparatus in which a reinforcing rib is bonded to an upper surface of an embodiment of the present invention.

Fig. 9b is a perspective view showing a batch type substrate processing apparatus in which a reinforcing rib is bonded to an upper surface of an embodiment of the present invention.

Fig. 10a is a perspective view showing a batch type substrate processing apparatus in which a heater is provided on the outside according to an embodiment of the present invention.

Fig. 10b is a perspective view showing a batch type substrate processing apparatus in which a heater is provided on the outside according to an embodiment of the present invention.

11 is a side cross-sectional view showing a cluster type batch substrate processing system in which a batch type substrate processing apparatus is stacked in a double layer according to an embodiment of the present invention.

Form for implementing the invention

The detailed description of the invention, which is set forth below, is by way of example, and is in the The embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. More invention Although the implementations are different, they must be understood that there is no need for mutual exclusion. For example, the specific shapes, structures, and characteristics described herein are described in connection with an embodiment, and may be implemented in other embodiments without departing from the spirit and scope of the invention. Further, it is to be understood that the position and arrangement of the individual components of the embodiments disclosed herein may be modified without departing from the spirit and scope of the invention. Therefore, the following detailed description is not to be taken in a limiting sense, and the scope of the present invention is limited only by the scope of the claims and the scope of the claims. In the drawings, like reference characters indicate the same or similar functions in various aspects, and the length and the area, the thickness, etc., and the form thereof are exaggerated for convenience.

In the present specification, the substrate can be understood to include a semiconductor substrate, a substrate for a display device such as an LED or an LCD, a solar cell substrate, and the like.

Moreover, in the present description, the substrate processing process means that the vapor deposition process is more preferably an evaporation process using an atomic layer vapor deposition method, but is not limited thereto, and includes an evaporation process using a chemical vapor deposition method. The meaning of the heat treatment process and the like can be understood. Among them, the following is a description of the vapor deposition process using the atomic layer vapor deposition method.

Hereinafter, a batch type apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

3 is a side cross-sectional view showing a cluster type batch substrate processing system according to an embodiment of the present invention, and FIG. 4 is a plan sectional view showing a cluster type batch substrate processing system according to an embodiment of the present invention.

Referring to FIG. 3 and FIG. 4, a cluster type batch according to an embodiment of the present invention The substrate processing system includes: a substrate loading unit 1 (2, 3, 5, 6); a substrate transfer robot 7; and a batch type substrate processing device 9 (9a, 9b, 9c, 9d) arranged horizontally along the arrangement path P. . In the present specification, the configuration path P can be understood to mean a space in which a horizontal substrate transfer robot track 7c that allows the substrate transfer robot 7 to perform horizontal movement, a space formed by horizontal elongation, or a horizontal elongation formation, and each batch type substrate processing are disposed. A space in which one side of the devices 9a, 9b, 9c, 9d abuts. The configuration of the substrate loading unit 1 and the substrate transfer robot 7 is a technical field well known in the art. Therefore, the detailed description will be omitted below except for the main components.

The substrate loading unit 1 is generally configured to carry the substrate 40 to the substrate transfer robot 7 from the outside. The substrate loading unit 1 may include a load port 2, a wafer transfer case (FOUP stocker) 3, a wafer transfer cassette transfer robot 5, and an FIMS door unit 6.

In the loading cassette 2, a wafer transfer cassette (FOUP, Front Opening Unified Pod) 4 including a plurality of substrates 40 can be transferred and placed via an external wafer transfer cassette transport system (not shown).

The wafer transfer cassette stacking unit 3 can provide a place for the wafer transfer cassette 4 loaded through the loading cassette 2 to be placed on a plurality of wafer transfer cassette stacking stages 3a and stand by before the substrate processing process. As an example, 14 wafer transfer cassettes 4 may be stacked in the wafer transfer cassette stacking unit 3.

The wafer transfer cassette transfer robot 5 can transfer the wafer transfer cassette 4 placed on the loading cassette 2 to the wafer transfer cassette stowage portion 3, or the wafer transfer cassette 4 placed on the wafer transfer cassette stowage portion 3. , transferred to FIMS (Front-opening Interface Mechanical Standard) Interface mechanical standard specification)) door part 6. The wafer transfer cassette transfer robot 5 can transfer the robot track 5a along the vertically extending wafer transfer cassette to perform up-and-down motion or rotational motion.

The FIMS door portion 6 can provide a passage for transferring the substrate 40 inside the wafer transfer cassette 4 to the batch type substrate processing apparatus 9 in a clean state. The wafer transfer cassette transfer robot 5 moves from the wafer transfer cassette stacking unit 3 to the wafer transfer cassette 4 of the FIMS gate unit 6, and can be closely attached to the FIMS door unit 6 to be hermetically bonded. In this state, one side of the wafer transfer cassette 4' which is in close contact with the FIMS door portion 6 is opened, and the substrate 40 can be carried out by the substrate transfer robot 7 via the open side.

The substrate transfer robot 7 can load/unload the substrate 40 carried in through the substrate loading unit 1 (that is, the FIMS door unit 6) in the batch type substrate processing apparatus 9. The substrate transfer robot 7 can move the robot track 7b along the vertically extending vertical substrate to perform up-and-down motion or rotational motion, and can move the robot track 7c along the horizontally extending horizontal substrate along the arrangement path P to perform horizontal motion. Further, the substrate transfer robot 7 includes five transfer forks 7a, and the five substrates 40 can be mounted on the substrate stacking unit 500 of the batch type substrate processing apparatus 9 at a time, which has an advantage that the process time can be shortened.

The cluster type batch substrate processing system of the present invention is characterized in that it comprises a plurality of batch type substrate processing apparatuses 9 arranged horizontally along the arrangement path P. The batch type substrate processing apparatus 9 can be disposed on one side or both sides with the path P as a reference. In summary, based on the arrangement path P, the two batch substrate processing apparatuses 9 are symmetrically arranged (refer to 9a, 9c, 9b, and 9d of FIG. 4), or one batch type substrate processing apparatus 9 is disposed (that is, Asymmetric configuration) can be. In this specification, as shown in Figures 3 and 4 as a benchmark That is, the batch type substrate processing apparatus 9 is disposed on both sides with reference to the arrangement path P (that is, 9a and 9c, 9b and 9d are arranged symmetrically).

Each of the batch type substrate processing apparatuses 9a, 9b, 9c, and 9d may include the substrate processing unit 100, the gas supply unit 200, the gas discharge unit 300, the casing 400, and the substrate loader 500, as will be described later. Therefore, unlike the substrate processing apparatus 8 and the substrate transfer robot 7 of the prior art, the substrate processing process is different only for one substrate processing apparatus 8 [refer to FIG. 1], and the present invention has a horizontal arrangement along the arrangement path P. The number of batch type substrate processing apparatuses 9 has an advantage that the productivity is greatly increased in proportion.

Further, as shown in FIG. 4, since each of the batch type substrate processing apparatuses 9a, 9b, 9c, and 9d protrudes to both sides, when the batch type substrate processing apparatuses 9a, 9b, 9c, and 9d have problems, the user can perform the side surface. Doors (not shown) (M1, M2, M3, M4) are easy to repair, manage, etc. Therefore, the batch type substrate processing apparatuses 9a and 9d may be arranged in the same manner in all the components including the door (not shown), and the batch type substrate processing apparatuses 9b and 9c may include a door (not shown). All components are configured identically. In short, the batch type substrate processing apparatuses 9a and 9d are formed with gates (not shown) that can enter (M1, M4) from the left side, based on the direction in which the substrate 40 is loaded/unloaded, and the batch type substrate processing apparatus 9b, Since 9c is formed with a door (not shown) that can enter (M2, M3) from the right side, the batch type substrate processing apparatuses 9a and 9d and the batch type substrate processing apparatuses 9b and 9c can be mutually symmetrical.

Further, referring to FIG. 3, the substrate loading unit 1 of the cluster type batch substrate processing system of the present invention may further include a cooling portion CS1 that cools the substrate that is unloaded from the batch substrate processing device 9 and ends the substrate processing process. 40. In the present invention, the number of substrates 40 subjected to substrate processing by a plurality of batch type substrate processing apparatuses 9 is greatly increased, and a plurality of substrates 40 are cooled, and the object of the present invention can be achieved without affecting productivity and efficiency. Therefore, by further providing at least one or more FIMS gate portions 6' by the cooling portion CS1, the substrate 40 unloaded from the batch substrate processing device 9 can be housed in the FIMS gate portion via the substrate transfer robot 7 Cooling is performed by the 6' wafer transfer cassette 4". Fig. 3 shows that the wafer transfer cassette 4" is placed in the cooling unit CS1 to cool the substrate 40. However, in addition to the wafer transfer cassette 4", it is also possible to prepare A plate (not shown) accommodates the substrate 40. Further, a fan unit (not shown) for improving cooling efficiency, a vent pipe (not shown), and the like may be further provided in the cooling portion CS1.

Further, referring to FIG. 3 and FIG. 4, the cluster type batch substrate processing system of the present invention further includes a cooling chamber CS2 in addition to the cooling portion CS1, and can cool the substrate 40 which terminates the substrate processing process. The cooling chamber CS2 may be disposed at an end portion of the arrangement path P, or may be disposed at an end portion of the arrangement path P that is in contact with the substrate loading unit 1 . A carrier plate (not shown) is provided in the cooling chamber CS2, and the substrate 40 can be accommodated. Further, a fan unit (not shown) for improving cooling efficiency, a vent pipe (not shown), and the like can be further provided. By providing the cooling chamber CS2, a larger number of substrates 40 can be cooled, which has the advantage of further improving productivity and efficiency.

The configuration of the batch type substrate processing apparatus 9 will be described in detail below.

Fig. 5 is a perspective view showing a batch type substrate processing apparatus 9 according to an embodiment of the present invention; Fig. 6 is a partially exploded perspective view of Fig. 5; and Fig. 7 is a plan sectional view showing a batch type substrate processing apparatus according to an embodiment of the present invention; 8a And Fig. 8b is an enlarged perspective view of the gas supply unit 200 and the gas discharge unit 300 according to an embodiment of the present invention.

Referring to FIGS. 5 to 7, the batch type substrate processing apparatus 9 of the present embodiment includes a substrate processing unit 100 and a gas supply unit 200.

The function of the substrate processing unit 100 can be said to be a process tube. The substrate processing unit 100 provides a processing chamber space 110 (or an internal space 110) in which a substrate stacking portion 500 on which a plurality of substrates 40 are laminated is housed, and a substrate processing process such as a vapor deposition film forming process can be performed. The batch type substrate processing apparatus 9 of the present invention is used to prevent the waste of the process gas and to increase the yield of the product by minimizing the processing chamber space 110, and the conventional batch type substrate processing apparatus 8 (refer to FIGS. 1 and 2). ), its height can be less than half. Therefore, the processing chamber space 110 is of course also half the size of the processing chamber space 11 shown in FIGS. 1 and 2.

The material of the substrate processing unit 100 may be at least one of quartz (Quartz), stainless steel (SUS), aluminum (aluminium), graphite (Graphite), silicon carbide (Silicon carbide), or aluminum oxide (Aluminium oxide).

According to an embodiment of the present invention, the substrate 40 is preferably processed in the processing chamber space 110 of the substrate processing unit 100. However, four to 64 substrates 40 can be processed within the scope of the object of the invention. When the number of the substrates 40 having less than four sheets is accommodated in the substrate processing unit 100, the productivity and the efficiency are lowered. When the substrate processing unit 100 accommodates more than 64 substrates 40, the conventional batch type is used. Atomic layer evaporation systems, as well, still suffer from problems with the use of a spacious processing chamber 11. The user can also insert a predetermined dummy substrate 41 at the upper end, the lower end, or a specific position of the laminated substrate 40 to improve the yield.

The substrate processing apparatus 8 (refer to FIGS. 1 and 2) of the conventional batch type atomic layer vapor deposition system has a processing chamber 11 space for accommodating about 100 substrates 40. If the dummy substrate 41 is excluded, about 25 to 30 sheets can be processed. Substrate 40. As a result, in consideration of a preferred embodiment of the present invention for processing 25 substrates 40 by one substrate processing apparatus 9, a plurality of batch substrate processing apparatuses 9a, 9b, 9c, and 9d are subjected to a single substrate processing process. The 100-piece substrate 40 can be processed, and thus has the advantage of being more productive than the conventional batch-type atomic layer evaporation system.

Further, the amount of the process gas supplied to the space of the processing chamber 110 which is reduced by half or less is reduced, and the time for discharging the process gas existing in the processing chamber 110 after the vapor deposition process is reduced.

Further, since the source gas and the flushing gas for atomic layer vapor deposition are easily controlled in the processing chamber 110 which is reduced by half to the conventional level, there is an advantage that the substrate 40 having the substrate processing process has an improved yield or quality.

The gas supply unit 200 is provided with a space 210 in which at least one gas supply flow path 250 is accommodated, and is formed to protrude from the outer peripheral surface of one side of the substrate processing unit 100, and the substrate processing gas can be supplied to the internal space 110 of the substrate processing unit 100. Here, the gas supply flow path 250 is a passage that can receive the substrate processing gas from the outside and is supplied to the inside of the substrate processing unit 100, and may have a form such as a tube or a mesopores, and in particular, for the tight control of the supply amount of the substrate processing gas, it is preferable to The tube is formed. The following description assumes that the gas supply flow path 250 is constituted by three gas supply pipes 251.

In addition, the gas discharge portion 300 provides accommodation for at least one gas discharge flow. The space 310 of the path 350 is formed on the outer peripheral surface of the other side of the substrate processing unit 100 [also on the opposite side of the gas supply unit 200], and can discharge the substrate processing gas flowing into the internal space 110 of the substrate processing unit 100. . Here, the gas discharge flow path 350 is a passage through which the substrate processing gas in the substrate processing unit 100 can be discharged to the outside, and may have a form such as a tube or a mesopores, and in particular, for the smooth discharge of the substrate processing gas, it is preferable to use a diameter ratio gas supply tube. 251 large tubes are formed. Further, the gas discharge pipe 351 is not provided, and the gas discharge flow path 350 is formed in the form of a center hole, and the pump is connected to the gas discharge flow path 350, and the substrate process gas can be extracted and discharged. Hereinafter, a description will be given assuming that one gas discharge pipe 351 constitutes the gas discharge flow path 350.

The outer peripheral surface of the substrate processing unit 100 can be integrally connected to the outer peripheral surface of the gas supply unit 200. Moreover, the outer peripheral surface of the substrate processing unit 100 can be integrally connected to the outer peripheral surface of the gas discharge unit 300. In view of this point, the materials of the gas supply unit 200 and the gas discharge unit 300 are preferably the same as those of the substrate processing unit 100. After the substrate processing unit 100, the gas supply unit 200, and the gas discharge unit 300 are connected to each other, the substrate processing unit 100, the gas supply unit 200, and the gas discharge unit 300 can be separately manufactured, and then soldered or the like. The method of combining. Further, after the substrate processing unit 100 having a predetermined thickness is manufactured, one side and the other side of the outer peripheral surface of the substrate processing unit 100 are removed, and the remaining portion is subjected to a cutting process to form a gas integrally formed in the substrate processing unit 100. A method of supplying the unit 200 and the gas discharge unit 300.

The batch type substrate processing apparatus 9 of the present embodiment may further include a housing 400 and a substrate stacking unit 500. The casing 400 is opened below, in order to have a shape surrounding the substrate processing unit 100 and the gas supply unit 200. The state is formed in a cylindrical shape protruding from one side, and the upper side of the casing 400 can be supported on the upper surface of the batch type substrate processing apparatuses 9a and 9b. With reference to Fig. 7, the casing 400 functions to form a heat insulator that creates a thermal environment of the substrate processing unit 100 and the gas supply unit 200, and encloses the outer periphery of the substrate processing unit 100 and the gas supply unit 200, and one side and the other The bulk form protruding from one side may be composed of a unit body 410 having a circular ring shape protruding from the one side and the other side in the vertical direction, and the outermost surface 420 of the casing 400 may be SUS or aluminum. Waiting for completion. Further, on the inner side surface of the casing 400, a heater 430 which is formed by continuously connecting curved portions (for example, "∪" or "∩" shape) may be provided.

The substrate stacking unit 500 is configured to be lifted and lowered by a conventional elevator (not shown), and includes a main table portion 510, an auxiliary table portion 520, and a substrate supporting portion 530.

The main table portion 510 is formed substantially in a cylindrical shape, and can be placed on the bottom of the batch type substrate processing apparatuses 9a, 9b, 9c, and 9d, and the upper surface is hermetically coupled to a manifold (Manifold) 450 coupled to the lower end side of the casing 400.

The auxiliary table portion 520 is formed substantially in a cylindrical shape, is disposed on the upper surface of the main table portion 510, and has a diameter smaller than the inner diameter of the substrate processing portion 100, and is inserted into the internal space 110 of the substrate processing portion 100. In order to maintain the uniformity of the semiconductor manufacturing process, the auxiliary stage 520 may be rotated in conjunction with a motor (not shown) so that the substrate 40 can be rotated in the substrate processing step. Further, in order to ensure process reliability inside the auxiliary stage unit 520, an auxiliary heater (not shown) for applying heat from the lower side of the substrate 40 in the substrate processing step is provided. The substrate 40 held by the substrate stacking unit 500 can be preheated before the substrate processing step by the auxiliary heater.

The substrate supporting portion 530 is along the peripheral portion of the auxiliary table portion 520 On the side, a plurality of them are arranged at intervals. A plurality of support grooves are formed on the inner surface of the substrate supporting portion 530 on the center side of the auxiliary table portion 520 so as to correspond to each other. Supported by the inner edge portion of the support groove insertion substrate 40, the plurality of substrates 40 loaded and transferred by the substrate transfer robot 7 via the substrate carry-in unit 1 are stacked on top of each other, and are stacked and held on the substrate. The stowage unit 500.

The substrate stacking portion 500 is detachably coupled to the lower end surface of the manifold 450 while being lifted and lowered, and the upper end surface of the manifold 450 is coupled to the lower end surface of the substrate processing portion 100 and the lower end surface of the gas supply portion 200. The gas supply connection pipe 253 extending from the gas supply pipe 251 constituting the gas supply flow path 250 of the gas supply unit 200 is inserted into the gas supply communication hole 451 of the manifold 450 to communicate with the gas discharge flow path constituting the gas discharge unit 300. The gas discharge connecting pipe 353 extending from the gas discharge pipe 351 of 350 is inserted into the gas discharge communication hole 455 of the manifold 450. When the substrate stacking portion 500 is raised and the upper surface of the main table portion 510 of the substrate stacking portion 500 is joined to the lower end surface side of the manifold 450, the substrate 40 is unloaded in the internal space 110 of the substrate processing portion 100, and the substrate processing portion 100 can be Closed. For a stable seal, a sealing member (not shown) may be interposed between the manifold 450 and the main table portion 510 of the substrate stowage portion 500.

Referring to FIGS. 6 and 7 , the substrate processing unit 100 is disposed concentrically with the casing 400 and disposed inside the casing 400 . The casing 400 is a substrate processing unit 100 , a gas supply unit 200 , and a gas discharge unit 300 that are integrally connected to each other. The shape of the setting.

The gas supply flow path 250 can be accommodated in the internal space 210 of the gas supply unit 200. Referring to FIG. 7 and FIG. 8a, the gas supply flow path 250 includes: plural The gas supply pipe 251 is formed along the longitudinal direction of the gas supply unit 200, and a plurality of discharge holes 252 are formed on one side of the gas supply pipe 251 toward the substrate processing unit 100. A plurality of discharge holes 252 are formed in each of the gas supply pipes 251. Then, the gas supply connection pipe 253 that is connected from the gas supply pipe 251 is inserted into the gas supply communication hole 451 formed in the manifold 450 to communicate with each other.

The gas discharge flow path 350 can be accommodated in the internal space 310 of the gas discharge unit 300. Referring to FIGS. 7 and 8b, the gas discharge passage 350 includes a gas discharge pipe 351 which is formed along the longitudinal direction of the gas discharge portion 300, and a plurality of discharge holes 352 which are formed in the gas discharge pipe 351 toward the substrate processing portion 100. One side. The discharge holes 352 are formed in a plurality of gas discharge pipes 351. Then, the gas discharge connecting pipe 353 that is connected from the gas discharge pipe 351 is inserted into the gas discharge communication hole 455 formed in the manifold 450 to communicate.

When the substrate stacking unit 500 is coupled to the manifold 450 and the plurality of substrates 40 are housed in the substrate processing unit 100, the substrate processing gas can be uniformly supplied to the substrate 40, and the substrate processing gas can be easily taken in and discharged. Externally, it is preferable to be located between the substrate supporting portion 530 and the substrate 40 adjacent to each other and the substrate 40.

Since the gas supply unit 200 and the gas discharge unit 300 are formed to protrude from the outer peripheral surface of the substrate processing unit 100, the distance between the substrate 40 and the gas supply flow path 250 is larger than the distance d1 between the substrate 40 and the substrate processing unit 100. D2 can also be equal or larger. That is, unlike the conventional technique shown in FIG. 2, that is, the internal space 11 of the process tube 10 in which the substrate processing step is performed, the gas supply portion 20 or the gas discharge portion 30, the substrate 40 and the inner peripheral surface of the process tube 10 are disposed. The distance d1' has a value greater than the distance d2' between the substrate 40 and the gas supply portion 20 (d1'>d2'), and the present invention conforms to d1. In the condition of d2, since the gas supply unit 200 or the gas discharge unit 300 is disposed outside the substrate processing unit 100, the size of the internal space 110 of the substrate processing unit 100 can be reduced to the minimum size at which the substrate accumulation unit 500 can be accommodated [ Or the smallest size of the substrate 40 can be accommodated. Therefore, there is an advantage in that the amount of the substrate processing gas used is reduced by reducing the size of the internal space 110 of the substrate processing unit 100 for performing the substrate processing step, and the cost of the substrate processing step is saved, and the substrate processing gas is reduced. The supply time and discharge time, and the advantages of improving the productivity of the substrate processing step accompanying this.

Fig. 9a and Fig. 9b are perspective views showing a batch type substrate processing apparatus 9 in which reinforcing ribs 120 and 130 are bonded to the upper surface of an embodiment of the present invention.

The process tube 10 of the batch type substrate processing apparatus 8 of the prior art is of an upright type, and the substrate processing part 100 of the batch type substrate processing apparatus 9 of the present invention has a cylindrical shape and the upper surface may be flat. By forming the upper surface of the substrate processing unit 100 in a flat manner, the upper space 12 of the upright processing chamber 11 (see FIGS. 1 and 2) in which the substrate 40 cannot be accommodated is excluded, and the internal space 110 of the substrate processing unit 100 is further reduced. . In the above-described upright type processing chamber 11, the batch type substrate processing apparatus 9 of the present invention is characterized in that a plurality of substrates are processed on the upper surface of the substrate processing unit 100 in order to solve the problem of durability that may occur due to the inability to uniformly disperse the internal pressure. Reinforcing ribs 120, 130.

The material of the reinforcing ribs 120 and 130 may be the same material as the material of the substrate processing unit 100. However, the material is not limited thereto, and various materials may be used within the range of the purpose of supporting the substrate processing unit 100.

The reinforcing ribs 120 and 130 may be combined with the plurality of reinforcing ribs 121 and 122 in a crosswise arrangement on the upper surface of the substrate processing unit 100. Alternatively, as shown in FIG. 9b, the plurality of reinforcing ribs 131 and 132 may be horizontally arranged. It is bonded to the upper surface of the substrate processing unit 100. The reinforcing ribs 120 and 130 can be bonded to the upper surface of the substrate processing unit 100 by welding or the like.

Figs. 10a and 10b are perspective views showing a batch type substrate processing apparatus 9 in which heaters 150 and 160 according to an embodiment of the present invention are provided outside.

Referring to FIGS. 10a and 10b, as shown in FIG. 6, a heater 430 is disposed on the inner side surface of the casing 400, or a heater 430 is not provided on the inner side surface of the casing 400, and the upper and outer peripheral surfaces of the substrate processing portion 100 are provided. The heaters 150, 160 for heating the substrate 40 may be provided. Although not shown, a heater may be provided on the upper surface and the outer peripheral surface of the gas supply unit 200 and the gas discharge unit 300 as needed.

The heaters 150 and 160 are formed in a plate shape, and can efficiently transfer heat in the internal space 110 of the substrate processing unit 100, and can be formed of any one selected from graphite (Graphite) or carbon (Carbon) composite. Alternatively, the heaters 150, 160 may be formed of any one selected from the group consisting of silicon carbide or molybdenum, or may be formed from Kanthal.

FIG. 11 is a side cross-sectional view showing a cluster type batch substrate processing system in which a batch type substrate processing apparatus 9 is stacked in two layers according to an embodiment of the present invention. 11 is a stack of substrate processing apparatuses 9a' and 9b' stacked on top of the batch type substrate processing apparatuses 9a and 9b, and the remaining configurations are the same as those of the cluster type batch substrate processing systems of FIGS. 3 and 4. Therefore, the explanation about this is omitted.

Batch type substrate processing apparatuses 9a, 9a', 9b, 9b' and conventional ones In the substrate processing apparatus 8, since the processing chamber space 11 is reduced to a level of half or less, even if a double-layered laminated structure is formed, the substrate processing apparatus 8 is not significantly different in height from the conventional substrate processing apparatus 8. Therefore, in the upper part and the lower part, the batch type substrate processing apparatuses 9a, 9a', 9b, and 9b' having the same configuration are laminated in a double layer, and the productivity can be further improved.

As described above, the cluster type batch substrate processing system of the present invention can arrange the plurality of batch type substrate processing apparatuses 9 horizontally along the arrangement path P, thereby maximizing the productivity of the substrate processing, saving the use amount of the substrate processing gas, and saving. The process cost shortens the supply and discharge time of the substrate processing gas, and improves the efficiency of the process.

Moreover, the productivity and efficiency of the substrate processing can be further improved by preparing the cooling portion CS1 and the cooling chamber CS2, which are spaces for smooth cooling of the plurality of substrates 40 subjected to the substrate processing.

In other words, the gas supply unit 200 and the gas discharge unit 300 that house the gas supply flow path 250 and the gas discharge flow path 350 are separated from the substrate processing unit 100 that performs the substrate processing step, and the upper portion of the substrate processing unit 100 is provided. Forming flatly, the size of the internal space 110 of the substrate processing unit 100 can be minimized, and the productivity of the substrate processing and the efficiency of the process can be further improved.

Further, by minimizing the size of the internal space 110 of the batch type substrate processing apparatus 9, it is easy to control the source gas and the flushing gas for atomic layer vapor deposition, so that the product yield or quality can be improved.

Further, the substrate transfer robot 7 transfers the substrate 40 to a plurality of batch type substrate processing apparatuses 9a, 9b, 9c, and 9d, so that the operation efficiency is good. When any of the batch type substrate processing apparatuses 9a, 9b, 9c, and 9d has a problem, the other batch type substrate processing apparatuses 9a, 9b, 9c, and 9d are operated, and the entire system can be operated without interrupting the entire batch type. The side surfaces of the substrate processing apparatuses 9a, 9b, 9c, and 9d easily enter the (M1, M2, M3, and M4) via the door (not shown), and the advantages of equipment repair or management are easily performed.

The present invention has been shown and described with respect to the preferred embodiments of the present invention, and it is not limited to the above-described embodiments, and various modifications may be made without departing from the spirit and scope of the invention. change. Such modifications and variations are within the scope of the appended claims.

1‧‧‧Substrate loading department

2‧‧‧Loading

3‧‧‧Fabric Transfer Box Stowage Department

3a‧‧‧ wafer transfer box stowage station

4, 4', 4"‧‧‧ wafer transfer boxes

5‧‧‧ wafer transfer box transfer robot

5a‧‧‧ wafer transfer box transfer robot track

6, 6'‧‧‧FIMS door

7‧‧‧Substrate transfer robot

7a‧‧‧Transfer fork

7b‧‧‧Substrate transfer robot track

7c‧‧‧Horizontal substrate transfer robot track

9, 9a, 9b‧‧‧ batch type substrate processing device

40‧‧‧Substrate

100‧‧‧Substrate Processing Department

200‧‧‧Gas Supply Department

500‧‧‧Substrate stowage department

510‧‧‧Main Department

520‧‧‧Auxiliary Department

530‧‧‧Substrate Support Department

CS1‧‧‧ Cooling Department

CS2‧‧‧ Cooling room

P‧‧‧Configuration path

Claims (21)

A cluster type batch substrate processing system comprising: a substrate loading unit that is carried into a substrate; and a plurality of batch type substrate processing apparatuses arranged horizontally along an arrangement path, and disposed on one side with the arrangement path as a reference or And the substrate transfer robot moves from the substrate loading portion along the arrangement path, and the substrate is loaded/unloaded by the batch type substrate processing apparatus. The cluster type batch substrate processing system of claim 1, wherein the substrate loading unit includes: a load port; a wafer transfer case (FOUP stocker), and a wafer transfer cassette that is carried in via the loading cassette ( FOUP); the wafer transfer cassette transfer robot transfers the wafer transfer cassette from the loading cassette to the wafer transfer cassette stowage portion, or transfers from the wafer transfer cassette stowage portion to the FIMS gate portion; and the FIMS gate portion provides The substrate is carried out from the wafer transfer cassette to the path of the substrate transfer robot. The cluster type batch substrate processing system according to claim 2, wherein the substrate loading unit further includes a cooling unit that cools the substrate unloaded from the batch type substrate processing apparatus. The cluster type batch substrate processing system of claim 1, wherein the end of the arrangement path further comprises a cooling chamber that cools the substrate unloaded from the batch substrate processing apparatus. The batch substrate processing system of claim 1, wherein the substrate transfer robot comprises five transfer forks that can transfer five of the substrates. A cluster type batch substrate processing system according to claim 1, wherein a batch type substrate processing apparatus is laminated on both sides of the batch type substrate processing apparatus. The batch type substrate processing system according to claim 1, wherein the batch type substrate processing apparatus includes: a substrate processing unit that houses a plurality of substrates stacked on the substrate stacking portion; and a gas supply unit formed on one side of the substrate processing unit At least one gas supply flow path for accommodating the flow of the substrate processing gas, and the substrate processing gas is supplied to the substrate processing unit; the distance between the substrate and the inner peripheral surface of the substrate processing unit is d1, and the substrate and the gas supply flow are provided on the outer peripheral surface. When the distance between the roads is d2, d1 D2. The batch type substrate processing system of claim 7, further comprising a gas discharge portion formed on an outer peripheral surface of the other side of the substrate processing portion, accommodating at least one gas discharge flow path through which the substrate processing gas flows, and discharging the supply to The substrate processing gas of the substrate processing unit. The batch type substrate processing system of claim 8, wherein the outer peripheral surface of the substrate processing portion is integrally connected to the outer peripheral surface of the gas supply portion The outer peripheral surface of the substrate processing unit is integrally coupled to the outer peripheral surface of the gas discharge unit. The batch type substrate processing system according to claim 8, wherein the gas supply flow path includes: a plurality of gas supply tubes formed along a longitudinal direction of the gas supply unit; and a plurality of discharge holes formed toward the substrate processing unit One side of the aforementioned gas supply pipe. The batch type substrate processing system according to claim 10, wherein the gas discharge flow path includes a gas discharge pipe formed along a longitudinal direction of the gas discharge portion, and a plurality of discharge holes formed in the gas toward the substrate processing portion One side of the discharge pipe. The batch type substrate processing system of claim 7, wherein the substrate processing portion has a cylindrical shape and the upper surface is flat. The batch type substrate processing system of claim 12, wherein a plurality of reinforcing ribs are bonded to an upper surface of the substrate processing portion. The batch substrate processing system of claim 13, wherein the plurality of reinforcing ribs are arranged in a crosswise manner or are coupled in parallel to the upper surface of the substrate processing portion. The batch type substrate processing system of claim 7, wherein a heater is provided on a peripheral surface and an upper surface of the substrate processing portion. The batch type substrate processing system of claim 15, wherein the heater is formed in a plate shape. The batch substrate processing system of claim 7, wherein the underside of the substrate processing portion is open; A casing is provided to surround the substrate processing unit and the gas supply unit, and the lower surface is open. Further, the substrate stacking unit is further provided, and the plurality of substrates are mounted on the substrate processing unit and are provided to be movable up and down. The batch substrate processing system of claim 17, wherein the substrate stacking portion is detachably coupled to the lower end surface of the manifold while being lifted and lowered, and the upper end surface of the manifold is coupled to the lower end surface of the substrate processing portion and the foregoing a lower end surface of the gas supply unit; and when the substrate stacking portion is coupled to the lower end surface of the manifold, the substrate is mounted on the substrate processing unit. The batch type substrate processing system according to claim 11, wherein the discharge hole and the discharge hole are located in the substrate stacking portion when the substrate stacking portion on which the plurality of substrates are stacked is accommodated in the substrate processing portion Supporting the spacing between the substrate and the substrate adjacent to each other. The batch substrate processing system of claim 7, wherein the substrate processing portion comprises quartz (Quartz), stainless steel (SUS), aluminum (aluminium), graphite (Graphite), silicon carbide (Silicon carbide), or aluminum oxide (Aluminium oxide). At least one of them. The batch substrate processing system of claim 15, wherein the heater is at least one of graphite (Graphite), carbon (carbon) composite, silicon carbide, molybdenum, or Kanthal. Formed.