JP2012023073A - Substrate processing device and method for manufacturing substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing device capable of preventing adherence of a product material made by thermal decomposition or gas reaction to the periphery of a processing chamber.SOLUTION: A substrate processing device 202 includes: a plurality of susceptors (members subjected to induction heating) 218; a plurality of wafers 200 placed on the susceptors; a processing chamber 201 formed of an inner tube 230 that performs heat treatment on the wafers 200 by radiation heat from the susceptors 218; an outer tube 205 provided outside the inner tube 230 that surrounds the inner tube 230 with a space SP; a gas supply nozzle 2321 provided in the space SP; and an induction heating unit provided outside the outer tube 205 that performs induction heating on the susceptors 218. On the inner tuber 230, an opening FH is provided on a peripheral side of the wafers 200 placed in the processing chamber 201. In addition, an outlet that flows gas toward the opening FH and the wafers 200 is provided on the gas supply nozzle 2321.

Description

  The present invention relates to a substrate processing apparatus and a processing technique thereof, and more particularly to a substrate processing apparatus that supplies a gas into a processing chamber and forms a film on a substrate, and a technique that is effective when applied to the processing technique.

In Japanese Patent Laid-Open No. 3-255619 (Patent Document 1), a high frequency current is passed through an RF (Radio Frequency) coil to raise the temperature of a susceptor mounted with a wafer disposed in the center of the processing chamber to heat the wafer. It is described. Further, a supply nozzle having a distribution plate for making the flow of the reaction gas uniform is provided around the susceptor, and a plurality of blow holes are provided at the same horizontal position of the supply nozzle, and H ₂ gas and reaction gas are provided from the blow holes. For example, blowing out SiH ₄ gas is described.

  Japanese Patent Application Laid-Open No. 10-50613 (Patent Document 2) describes that a resistance heater is built in a wafer mounting portion of a susceptor provided in a reaction furnace. Further, it is described that an inner tube is provided in the reaction furnace, and a reaction gas supply port is formed on the side wall on the reaction gas supply chamber side and an exhaust port is formed on the side wall on the exhaust chamber side among the pair of opposed side walls of the inner tube. ing. In addition, it is described that the reaction gas supply port and the exhaust port are formed in multiple stages and in the shape of a slit parallel to the wafer mounting surface corresponding to the wafer mounting portion of each stage of the susceptor.

Japanese Examined Patent Publication No. 6-16495 (Patent Document 3) describes a double-tube reaction tube composed of an outer tube and an inner tube. Further, it is described that the substrate disposed in the inner tube is heated in a resistance heating furnace. Also, a silane-based gas (SiH ₄ , SiH ₂ Cl ₂ , SiHCl ₃ , SiCl ₄ ) and HCl gas or Cl are provided as reaction gases from a nozzle provided in the inner tube and having a plurality of pores opening toward the substrate. It is described that the mixed gas and the hydrogen gas are separately supplied by introducing a mixed gas of _two gases and introducing a hydrogen gas from a plurality of pores formed in the inner pipe.

JP-A-3-255619 Japanese Patent Laid-Open No. 10-50613 Japanese Patent Publication No. 6-16495

  In a substrate processing process, a substrate processing apparatus that performs a film forming process on a substrate is widely used. In this substrate processing apparatus, for example, a substrate disposed in a processing chamber of the substrate processing apparatus is heated, and a material gas is introduced into the processing chamber, thereby forming a film on the substrate.

  However, when the raw material gas reaches a high temperature before reaching the substrate in the processing chamber, there arises a problem that substances generated by thermal decomposition or gas reaction adhere to the periphery of the processing chamber.

  If the generated substance adheres to the periphery of the processing chamber, it becomes impossible to stably form a film on the substrate. In addition, due to the generated material adhering to the periphery of the processing chamber, the members around the processing chamber may be destroyed. In addition, the generated substance attached to the periphery of the processing chamber peels off, reaches the processing chamber or the substrate in the processing chamber, and becomes a foreign substance (particle).

  This invention is made | formed in view of the said subject, The objective is to provide the technique which suppresses that the production | generation substance by thermal decomposition and reaction of gas adheres to a processing chamber periphery.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  Of the inventions disclosed in the present application, the outline of typical ones will be briefly described as follows.

  That is, the substrate processing apparatus according to the present invention includes an induction heating body, heats the substrate by radiant heat from the induction heating body, processes the processing chamber, an inner tube forming the processing chamber, An outer tube provided outside the inner tube and surrounding the inner tube in a gap, a gas supply nozzle disposed in the gap and an outer side of the outer tube, and induction heating the induction heating body An induction heating device. The inner tube is provided with a circulation port on a peripheral side of a substrate disposed in the processing chamber. Further, the gas supply nozzle is provided with a blowout port for blowing gas toward the flow port and the substrate.

  The effects obtained by typical ones of the inventions disclosed in the present application will be briefly described as follows.

  That is, it is possible to suppress the product generated by thermal decomposition or gas reaction from adhering to the periphery of the processing chamber.

It is a figure which shows schematic structure of the substrate processing apparatus in Embodiment 1 of this invention. It is a top view which shows the state which has loaded the wafer in the susceptor. It is sectional drawing cut | disconnected by the AA line of FIG. It is sectional drawing which shows a mode that a wafer is isolate | separated from a susceptor. It is a side view which shows the whole structure of a boat. It is a top view which shows a mode that the susceptor with which the wafer was mounted in the boat is loaded. It is an expanded sectional view along the BB line of FIG. 2 is a schematic configuration diagram of a processing furnace of the substrate processing apparatus in the first embodiment and a periphery of the processing furnace. FIG. It is a schematic block diagram which shows the cross section of the horizontal direction of the processing furnace shown in FIG. FIG. 3 is an explanatory diagram showing a sequence of substrate processing steps in the first embodiment. It is principal part sectional drawing which shows typically the principal part of the processing furnace shown in FIG. It is an expanded sectional view which shows the cross-sectional structure around the 1st area | region of the gas supply nozzle shown in FIG. It is an expanded sectional view which shows the cross-sectional structure of the 2nd area | region periphery of the gas supply nozzle shown in FIG. It is principal part sectional drawing which shows typically the principal part of the processing furnace in Embodiment 2 of this invention which is a modification of the processing furnace processing furnace shown in FIG. It is explanatory drawing which shows the sequence of the process process of the board | substrate in Embodiment 2 which is a modification of the process process of the board | substrate shown in FIG. FIG. 10 is a cross-sectional view showing a schematic configuration of a processing furnace in a third embodiment of the present invention which is a modification of the processing furnace shown in FIG. 9. It is a cross-sectional view which shows schematic structure of the modification of FIG. It is an expanded sectional view which shows the modification of the board | substrate holding structure shown in FIG.

  In the following embodiments, when it is necessary for the sake of convenience, the description will be divided into a plurality of sections or embodiments. However, unless otherwise specified, they are not irrelevant to each other. There are some or all of the modifications, details, supplementary explanations, and the like.

  Further, in the following embodiments, when referring to the number of elements (including the number, numerical value, quantity, range, etc.), especially when clearly indicated and when clearly limited to a specific number in principle, etc. Except, it is not limited to the specific number, and may be more or less than the specific number.

  Further, in the following embodiments, the constituent elements (including element steps and the like) are not necessarily indispensable unless otherwise specified and apparently essential in principle. Needless to say.

  Similarly, in the following embodiments, when referring to the shape, positional relationship, etc., of components, etc., unless otherwise specified, and in principle, it is considered that this is not clearly the case, it is substantially the same. Including those that are approximate or similar to the shape. The same applies to the above numerical values and ranges.

  In all the drawings for explaining the embodiments, the same members are denoted by the same reference symbols in principle, and the repeated explanation thereof is omitted. In order to make the drawings easy to understand, even a plan view may be hatched.

(Embodiment 1)
In an embodiment for carrying out the present invention, a substrate processing apparatus is configured as a semiconductor manufacturing apparatus that performs various processing steps included in a manufacturing method of a semiconductor device (IC or the like) as an example. In the following description, the present invention is applied to a vertical substrate processing apparatus that performs film formation processing by an epitaxial growth method, film formation processing by a CVD (Chemical Vapor Deposition) method, or oxidation processing or diffusion processing on a semiconductor substrate (semiconductor wafer). The case where the technical idea of is applied will be described. In particular, in this embodiment, a batch-type substrate processing apparatus that processes a plurality of substrates at once will be described.

<Configuration of substrate processing apparatus>
First, the substrate processing apparatus in the first embodiment will be described with reference to the drawings. FIG. 1 is a diagram showing a schematic configuration of the substrate processing apparatus according to the first embodiment. As shown in FIG. 1, the substrate processing apparatus 101 according to the first embodiment is configured to use a cassette 110 as a wafer carrier containing a plurality of wafers (semiconductor substrates) 200 made of silicon or the like. A housing 111 is provided. The casing 111 has, for example, a substantially rectangular parallelepiped shape. Hereinafter, although each member which comprises a substrate processing apparatus is demonstrated, the side surface in which the carrying in / out port of the cassette 110 is arrange | positioned among the side surfaces of the housing | casing 111 is demonstrated as a front. The position of each member in the housing 111 will be described with the direction toward the front as the front and the direction away from the front as the rear. A front maintenance port 103 serving as an opening provided for maintenance is opened below the front wall 111 a of the housing 111, and a front maintenance door 104 that opens and closes the front maintenance port 103 is a front wall of the housing 111. 111a.

  A cassette loading / unloading port (substrate container loading / unloading port) 112 is opened at the front maintenance door 104 so as to communicate between the inside and the outside of the casing 111. The cassette loading / unloading port 112 has a front shutter (substrate container loading / unloading port). It is opened and closed by an exit opening / closing mechanism 113. A cassette stage (substrate container delivery table) 114 is installed inside the casing 111 of the cassette loading / unloading port 112. The cassette 110 is loaded onto the cassette stage 114 by an in-process transfer device (not shown) and unloaded from the cassette stage 114. The cassette stage 114 is configured so that the wafer 200 in the cassette 110 is placed in a vertical posture and the wafer loading / unloading port of the cassette 110 faces upward by the in-process transfer device.

  A cassette shelf (substrate container mounting shelf) 105 is installed at a substantially central lower portion in the front-rear direction in the housing 111, and the cassette shelf 105 stores a plurality of cassettes 110 in a plurality of rows and a plurality of rows. It arrange | positions so that the wafer 200 in the cassette 110 can be taken in and out. The cassette shelf 105 is installed on a slide stage (horizontal movement mechanism) 106 so that it can traverse. Further, a buffer shelf (substrate container storage shelf) 107 is installed above the cassette shelf 105, and the cassette 110 is also stored in the buffer shelf 107.

  A cassette carrying device (substrate container carrying device) 118 is installed between the cassette stage 114 and the cassette shelf 105. The cassette transport device 118 includes a cassette elevator (substrate container lifting mechanism) 118a that can be moved up and down while holding the cassette 110, and a cassette transport mechanism (substrate container transport mechanism) 118b as a transport mechanism. The cassette 110 can be transported between the cassette stage 114, the cassette shelf 105, and the buffer shelf 107 by the continuous operation of the cassette elevator 118a and the cassette transport mechanism 118b.

  A wafer transfer mechanism (substrate transfer mechanism) 125 is installed behind the cassette shelf 105. The wafer transfer mechanism 125 includes a wafer transfer device (substrate transfer device) 125a capable of rotating or linearly moving the wafer 200 in the horizontal direction and a wafer transfer device elevator (substrate transfer device) for raising and lowering the wafer transfer device 125a. Mounting device lifting mechanism) 125b. As schematically shown in FIG. 1, the wafer transfer device elevator 125 b is installed at the left end of the housing 111. Due to the continuous operation of the wafer transfer device elevator 125b and the wafer transfer device 125a, a tweezer (substrate holding body) 125c in the wafer transfer device 125a is a susceptor that functions as a mounting portion for the wafer 200, and The wafer 200 is loaded (charged) and unloaded (discharged) from a susceptor in a susceptor holding mechanism (not shown).

  Hereinafter, in the susceptor holding mechanism, a state in which the wafer 200 is loaded on the susceptor and a state in which the wafer 200 is detached are shown. 2 is a top view showing a state in which the wafer 200 is loaded on the susceptor 218, and FIG. 3 is a cross-sectional view taken along the line AA of FIG. First, as shown in FIG. 2, the susceptor 218 has a disc shape, and has a concentric peripheral portion 218 a and a circular central portion 218 b. The disc-shaped wafer 200 is mounted on the central portion 218b of the susceptor 218. That is, the susceptor 218 has a larger disk shape than the wafer 200, and the wafer 200 is included in the central portion 218 b of the susceptor 218. Further, as shown in FIG. 3, the peripheral portion 218a of the susceptor 218 is higher than the central portion 218b of the susceptor 218, and the susceptor 218 has a boundary region between the peripheral portion 218a and the central portion 218b. A stepped portion 218c is formed. That is, the susceptor 218 has a shape in which the central portion 218b is recessed from the peripheral edge portion 218a, and the wafer 200 is mounted in the recessed central portion 218b. In other words, it can be said that the thickness of the central portion 218b of the susceptor 218 is smaller than the thickness of the peripheral portion 218a of the susceptor 218. As shown in FIGS. 2 and 3, a central portion 218 b of the susceptor 218 is provided with a plurality of pin holes PH, and a member MT is embedded in the pin holes PH. The susceptor 218 configured as described above is made of a conductive material (carbon or carbon graphite) whose surface is coated with silicon carbide (SiC). Preferably, the susceptor 218 may coat the surface of the conductive material with a coating material such as silicon carbide (SiC). Thereby, it can suppress that an impurity discharge | releases from an electroconductive material.

  The susceptor 218 is preferably formed in a disk shape because it is easy to uniformly heat the wafer 200 in the circumferential direction, but the susceptor 218 may be formed in a plate shape in which the main surface of the susceptor 218 is formed in an ellipse. The main surface may be formed in a polygonal shape. It can be seen that the wafer 200 is loaded on the susceptor 218 as described above.

  Next, an example in which the wafer 200 is detached from the susceptor 218 in the susceptor holding mechanism will be described. FIG. 4 is a cross-sectional view showing a state where the wafer 200 is separated from the susceptor 218. As shown in FIG. 4, the susceptor holding mechanism is provided with a push-up pin PN for pushing up the wafer 200 and a push-up pin elevating mechanism UDU for raising and lowering the push-up pin PN. First, after positioning the push-up pin PN so as to contact the member MT embedded in the pin hole PH formed in the susceptor 218 by the susceptor holding mechanism, the push-up pin PN is moved by the push-up pin lifting mechanism UDU. Raise. Then, as shown in FIG. 4, the wafer 200 is separated from the susceptor 218 together with the member MT embedded in the pin hole PH. In this way, it can be seen that the wafer 200 is detached from the susceptor 218. From this, it can be seen that the wafer 200 can be loaded and unloaded between the tweezer (substrate holder) 125c in the wafer transfer device 125a and the susceptor 218. From the viewpoint of reducing damage to the wafer 200 when the wafer 200 is pushed up, the member MT that is brought into contact with the tip of the push-up pin PN is formed in a flange shape as shown in FIGS. It is desirable that Further, from the viewpoint of suppressing heat dissipation from the pin hole PH, it is desirable to form the member MT in a flange shape and embed it in the pin hole PH.

  In addition to the susceptor holding mechanism, the substrate processing apparatus 101 according to the first embodiment also includes a susceptor moving mechanism (not shown). The susceptor moving mechanism is configured to load (charge) and unload (discharge) the susceptor 218 between the susceptor holding mechanism and the boat 217 (substrate holder).

  Next, as shown in FIG. 1, behind the buffer shelf 107, a clean unit 134 a composed of a supply fan and a dustproof filter is provided to supply clean air, which is a cleaned atmosphere, into the substrate processing apparatus 101. The clean unit 134 a is configured to circulate clean air inside the casing 111. In addition, a clean unit (not shown) including a supply fan and a dustproof filter is installed at the right end, which is opposite to the wafer transfer device elevator 125b, so as to supply clean air. The clean air blown out from the clean unit flows through the wafer transfer device 125a and is then sucked into an exhaust device (not shown) and exhausted to the outside of the casing 111.

  On the rear side of the wafer transfer device (substrate transfer device) 125a, a pressure-resistant casing 140 having a confidential performance capable of maintaining a pressure lower than atmospheric pressure (hereinafter referred to as negative pressure) is installed. . The pressure-resistant housing 140 forms a load lock chamber (transfer chamber) 141 that is a load lock type standby chamber having a capacity capable of accommodating the boat 217.

  A wafer loading / unloading port (substrate loading / unloading port) 142 is opened on the front wall 140a of the pressure-resistant housing 140, and the wafer loading / unloading port 142 is opened and closed by a gate valve (substrate loading / unloading port opening / closing mechanism) 143. It has become. A gas supply pipe 144 for supplying an inert gas such as nitrogen gas to the load lock chamber 141 and a gas exhaust pipe (for exhausting the load lock chamber 141 to a negative pressure) on a pair of side walls of the pressure-resistant housing 140 (Not shown) are connected to each other.

  A processing furnace (reaction furnace) 202 is provided above the load lock chamber 141. The lower end of the processing furnace 202 is configured to be opened and closed by a furnace port shutter (furnace port gate valve) (furnace port opening / closing mechanism) 147.

  As schematically shown in FIG. 1, a boat elevator (supporting body lifting mechanism) 115 for lifting and lowering the boat 217 is installed in the load lock chamber 141. A seal cap 219 as a lid is horizontally installed on an arm (not shown) as a connecting tool connected to the boat elevator 115, and the seal cap 219 supports the boat 217 vertically. It is comprised so that a lower end part can be obstruct | occluded.

  The boat 217 includes a plurality of support columns (holding members), and a plurality of (for example, about 50 to 100) susceptors 218 are horizontally held in a state where their centers are aligned in the vertical direction. It is configured to be able to. Each unit configuring the substrate processing apparatus 101 is electrically connected to the controller 240, and the controller 240 is configured to control the operation of each unit configuring the substrate processing apparatus 101.

<Operation of substrate processing apparatus>
The substrate processing apparatus 101 according to the first embodiment is schematically configured as described above, and the operation thereof will be described below. In the following description, the operation of each unit constituting the substrate processing apparatus 101 is controlled by the controller 240.

  As shown in FIG. 1, the cassette loading / unloading port 112 is opened by the front shutter 113 before the cassette 110 is supplied to the cassette stage 114. Thereafter, the cassette 110 is loaded from the cassette loading / unloading port 112 and placed on the cassette stage 114. At this time, the wafer 200 placed on the cassette stage 114 is in a vertical posture, and is placed so that the wafer loading / unloading port of the cassette 110 faces upward.

  Next, the cassette 110 is picked up from the cassette stage 114 by the cassette carrying device 118, the wafer 200 in the cassette 110 is in a horizontal posture, and the wafer loading / unloading port of the cassette 110 faces the rear of the housing 111. Then, it is rotated 90 ° clockwise around the rear of the casing 111. Subsequently, the cassette 110 is automatically transported to the designated position on the cassette shelf 105 or the buffer shelf 107 by the cassette transport device 118 and delivered. That is, after the cassette 110 is temporarily stored in the buffer shelf 107, it is transferred to the cassette shelf 105 by the cassette conveying device 118 or directly conveyed to the cassette shelf 105.

  Thereafter, the slide stage 106 moves the cassette shelf 105 horizontally and positions the cassette 110 to be transferred so as to face the wafer transfer device 125a. The wafer 200 is picked up from the cassette 110 through the wafer loading / unloading port by the tweezer 125c of the wafer transfer device 125a. At this time, in the susceptor holding mechanism, the push-up pin PN (see FIG. 4) is raised by the push-up pin lifting mechanism UDU (see FIG. 4). Subsequently, the wafer 200 is placed on the push-up pins PN (see FIG. 4) by the wafer transfer device 125a. Then, the push-up pins PN (see FIG. 4) on which the wafer 200 is placed are lowered by the push-up pin lifting mechanism UDU (see FIG. 4), so that the wafer 200 is mounted on the susceptor 218 as shown in FIG. The Thereafter, the wafer transfer device 125a returns to the cassette 110, and loads the next wafer 200 into the susceptor holding mechanism.

  Next, when the wafer loading / unloading port 142 of the load lock chamber 141 whose interior is previously set to the atmospheric pressure state is opened by the operation of the gate valve 143, the wafer 200 is placed from the susceptor holding mechanism by the susceptor moving mechanism. The susceptor 218 (see FIG. 3) is removed. The detached susceptor 218 (see FIG. 3) is loaded into the load lock chamber 141 through the wafer loading / unloading port 142 by the susceptor moving mechanism, and the susceptor 218 is loaded into the boat 217.

  Here, a configuration in which the susceptor 218 having the wafer 200 mounted on the boat 217 is loaded will be described. FIG. 5 is a side view showing the overall structure of the boat 217. FIG. 6 is a plan view showing a state in which the susceptor 218 on which the wafer 200 is mounted is loaded on the boat 217.

  First, as shown in FIG. 5, the boat 217 functions as a holding body that holds the susceptor 218. The boat 217 includes a disc-shaped bottom plate 217a, a disc-shaped top plate 217b, a bottom plate 217a, and a top plate 217b. It consists of three or four struts PR made of connected quartz. As shown in FIG. 6, each of the plurality of pillars PR is formed with a holding portion HU1 that holds a susceptor 218 as a support on which the wafer 200 is mounted. The holding portion HU1 is formed so as to protrude from each of the columns PR toward the central axis of the boat 217.

  Next, a configuration of the susceptor 218 on which the wafer 200 is mounted as viewed from the side surface in which the boat 217 is loaded will be described. FIG. 7 is an enlarged cross-sectional view taken along line BB in FIG. As shown in FIG. 7, the boat 217 has a plurality of columns PR extending in the extending direction of the boat 217 (vertical direction in FIG. 7), and the plurality of columns PR are equally spaced in the extending direction. Has a plurality of holding portions HU1. And this holding | maintenance part HU1 is provided in the mutually same height by the some support | pillar PR, and hold | maintains the three edge parts of the susceptor 218 by the three holding | maintenance part HU1 provided in the mutually same height, for example. Yes. Therefore, the susceptor 218 held by the three holding units HU1 is arranged to maintain a horizontal state. Specifically, as shown in FIG. 7, a susceptor 218 is mounted on each of the holding portions HU <b> 1 arranged at a predetermined interval in the extending direction on the boat 217. Therefore, a plurality of susceptors 218 are stacked on the boat 217 at predetermined intervals in the extending direction of the boat 217. As described above, the susceptor 218 is provided independently of the support column PR, and is configured so that the susceptor 218 can be loaded into the boat 217 and can be detached from the boat 217.

  After filling the boat 217 with the susceptor 218, the susceptor moving mechanism returns to the susceptor holding mechanism, and loads the susceptor 218 (see FIG. 3) on which the next wafer 200 is placed on the boat 217.

  When a predetermined number of susceptors 218 (see FIG. 3) are loaded into the boat 217, the wafer loading / unloading port 142 is closed by the gate valve 143. Thereafter, the lower end portion of the processing furnace 202 is opened by the furnace port shutter (furnace port gate valve 147). Subsequently, the seal cap 219 is raised by the boat elevator 115, and the boat 217 supported by the seal cap 219 is loaded into the processing furnace 202.

  After loading, arbitrary processing is performed on the wafer 200 in the processing furnace 202. After the wafer 200 is processed, the boat 217 is pulled out by the boat elevator 115. Further, the gate valve 143 is opened. After that, the processed wafer 200 and the cassette 110 are paid out to the outside of the housing 111 by an operation generally reverse to the operation described above. As described above, the substrate processing apparatus 101 according to the first embodiment operates.

<Processing furnace configuration>
Next, the processing furnace 202 of the substrate processing apparatus 101 according to the first embodiment will be described with reference to the drawings. FIG. 8 is a schematic configuration diagram of the processing furnace 202 and the periphery of the processing furnace 202 of the substrate processing apparatus 101 according to the first embodiment, and is shown as a longitudinal sectional view. FIG. 9 is a schematic configuration diagram of the processing furnace shown in FIG. 8 and is shown as a cross-sectional view.

  As shown in FIG. 8, the processing furnace 202 has an induction heating device 206 for heating by applying a high-frequency current. The induction heating device 206 is formed in a cylindrical shape, and includes an RF coil 2061 as an induction heating unit, a wall body 2062, and a cooling wall 2063. The RF coil 2061 is connected to a high frequency power source (not shown), and a high frequency current flows through the RF coil 2061 by the high frequency power source.

  The wall body 2062 is made of a metal such as a stainless material. The wall body 2062 has a cylindrical shape, and an RF coil 2061 is provided on the inner wall side. The RF coil 2061 is supported by a coil support portion (not shown). The coil support portion is supported by the wall body 2062 with a predetermined gap in the radial direction between the RF coil 2061 and the wall body 2062.

  On the outer wall side of the wall body 2062, a cooling wall 2063 is provided concentrically with the wall body 2062. An opening 2066 is formed at the center of the upper end of the wall body 2062. A duct is connected to the downstream side of the opening 2066, and a radiator 2064 as a cooling device and a blower 2065 as an exhaust device are connected to the downstream side of the duct.

  In the cooling wall 2063, for example, a cooling medium flow path is formed in almost the entire area of the cooling wall 2063 so that, for example, cooling water can flow as a cooling medium. The cooling wall 2063 is connected to a cooling medium supply unit that supplies a cooling medium (not shown) and a cooling medium discharge unit that discharges the cooling medium. By supplying the cooling medium from the cooling medium supply unit to the cooling medium flow path and discharging from the cooling medium discharge unit, the cooling wall 2063 is cooled, and the walls 2062 and 2062 are cooled by heat conduction. .

Inside the RF coil 2061, an outer tube 205 is provided as a reaction tube constituting a reaction vessel concentrically with the induction heating device 206. The outer tube 205 is made of quartz (SiO ₂ ) material as a heat-resistant material, and has a cylindrical shape with the upper end closed and the lower end opened.

A manifold 209 is disposed below the outer tube 205 concentrically with the outer tube 205. The manifold 209 is made of, for example, quartz (SiO ₂ ) or stainless steel and has a cylindrical shape with an upper end and a lower end opened. The manifold 209 is provided to support the outer tube 205. An O-ring 309 as a seal member is provided between the manifold 209 and the outer tube 205. The manifold 209 is supported by a holding body (not shown), so that the outer tube 205 is installed vertically. In this way, a reaction vessel is formed by the outer tube 205 and the manifold 209. Here, the manifold 209 is not particularly limited to the case where the manifold 209 is provided separately from the outer tube 205, and the manifold 209 may not be provided individually as an integral part of the outer tube 205.

As shown in FIG. 9, an inner tube 230 is provided inside the outer tube 205 so as to form a gap SP with the outer tube 205. In other words, the outer tube 205 is provided outside the inner tube 230 so as to surround the inner tube 230 via the gap SP. For example, the inner tube 230 is formed concentrically with the outer tube 205. The inner tube 230 forms the processing chamber 201. That is, the processing chamber 201 is formed inside the inner tube 230. The gap SP between the inner tube 230 and the outer tube 205 is an annular hollow space surrounding the side wall 230a of the inner tube 230 and the lid portion on the upper end side. The inner tube 230 is made of quartz (SiO ₂ ) material as a heat resistant material, and has a cylindrical shape with the upper end closed and the lower end opened.

  In addition, an opening FH that connects the processing chamber 201 in the inner tube 230 and the gap SP outside the inner tube 230 is formed in the side wall 230 a of the inner tube 230. The opening FH is a distribution port through which a processing gas such as a source gas flows from the gap SP side into the processing chamber 201 in the substrate processing step described later. Further, as shown in FIG. 8, the lower end of the inner tube 230 is in close contact with the inner wall of the outer tube 205. For example, as shown in FIG. 8, it is joined to the inner wall of the outer tube 205 above the gas exhaust port 2311. For this reason, between the gap SP and the processing chamber 201, the region other than the opening FH that is a flow port is sealed.

  In the processing chamber 201, wafers 200 as semiconductor substrates are accommodated in a state of being arranged in multiple stages along the longitudinal direction of the inner tube in a vertical position in a horizontal posture by a boat 217 and a susceptor 218 as a derivative.

In the gap SP between the outer tube 205 and the inner tube 230, a gas formed of quartz (SiO ₂ ) material is used to supply gas from the side to each wafer 200 disposed in the processing chamber 201. A supply nozzle 2321 is arranged. Further, below the outer tube 205, a gas exhaust port as an exhaust unit formed of a quartz (SiO ₂ ) material that exhausts the gas that has passed through each wafer 200 disposed in the processing chamber 201 from the side. 2311 is formed.

  The gas supply nozzle 2321 has an upper end closed, and a gas supply port 2322 serving as a blow-out port for blowing gas toward the wafer 200 through the opening FH is provided on the side wall. The gas supply port 2322 is formed toward the center of the wafer 200 disposed in the processing chamber 201. In the present embodiment, as shown in FIG. 8, a plurality of stages of wafers 200 are placed on the boat 217. Therefore, a plurality of gas supply ports 2322 are formed in the gas supply nozzle 2321 so that the gas can be uniformly supplied to each of the plurality of wafers 200. The plurality of gas supply ports 2322 are preferably arranged at height positions between the wafers 200 at each stage.

  A gas exhaust pipe 231 serving as an exhaust part communicating with the gas exhaust port 2311 and a gas supply pipe 232 communicating with the gas supply nozzle 2321 are provided outside the side wall below the outer tube 205. The gas supply pipe 232 is a gas supply unit that supplies gas to the gas supply nozzle 2321. Note that the gas exhaust port 2311 and the gas exhaust pipe 231 may be provided not on the side wall below the outer tube 205 but on the side wall of the manifold 209, for example. However, from the viewpoint of avoiding that hot exhaust gas circulates in the vicinity of the driving unit such as the rotation mechanism 254, it is preferable to provide the exhaust gas on the side wall below the outer tube 205 as in the present embodiment. Further, the communication portion between the gas supply nozzle 2321 and the gas supply pipe 232 may be provided on the side wall of the manifold 209 instead of the side wall below the outer tube 205.

  The gas supply pipe 232 is divided into, for example, three on the upstream side, and a first gas supply is provided via valves 177, 178, 179 and MFCs (Mass Flow Controllers) 183, 184, 185 as gas flow control devices. The power source 180, the second gas supply source 181, and the third gas supply source 182 are connected to each other. A gas flow rate control unit 235 is electrically connected to the MFCs 183, 184, 185 and valves 177, 178, 179, and the gas flow rate control unit 235 allows the flow rate of the supplied gas to be a desired flow rate. It is controlled at the timing. The gas supply pipe 232 is further branched on the upstream side, and is connected to an inert gas supply source (not shown) via a valve (not shown) and an MFC as an inert gas flow control device.

  A vacuum exhaust device 246 such as a vacuum pump is connected to the downstream side of the gas exhaust pipe 231 via a pressure sensor (not shown) as a pressure detector and an APC (Automatic Pressure Control) valve 242 as a pressure regulator. ing. A pressure control unit 236 is electrically connected to the pressure sensor and the APC valve 242, and the pressure control unit 236 adjusts the opening degree of the APC valve 242 based on the pressure detected by the pressure sensor. Control is performed at a desired timing so that the pressure in the processing chamber 201 becomes a desired pressure.

  A seal cap 219 is provided below the manifold 209 as a furnace port lid for hermetically closing the lower end opening of the manifold 209. The seal cap 219 is made of, for example, a metal such as stainless steel and is formed in a disk shape. On the upper surface of the seal cap 219, an O-ring 301 is provided as a seal member that contacts the lower end of the manifold 209.

  The seal cap 219 is provided with a rotation mechanism 254. A rotation shaft 255 of the rotation mechanism 254 passes through the seal cap 219 and is connected to the boat 217, and is configured to rotate the wafer 200 by rotating the boat 217.

  The seal cap 219 is configured to be moved up and down in the vertical direction by an elevating motor 248 as an elevating mechanism provided outside the processing furnace 202, so that the boat 217 can be carried into and out of the processing chamber 201. It is possible.

A cylindrical heat insulating cylinder 216 made of, for example, quartz (SiO ₂ ) as a heat resistant material is disposed at the lower part of the boat 217, and is generated by induction heating by the induction heating device 206 by the heat insulating cylinder 216. Therefore, the heat is not easily transmitted to the manifold 209 side. The heat insulating cylinder 216 may be provided integrally with the boat 217 without being provided separately from the boat 217. Further, instead of the heat insulating cylinder 216 or in addition to the heat insulating cylinder 216, a plurality of heat insulating plates may be provided in the lower part of the boat 217 or the lower part of the heat insulating cylinder 216.

  The boat 217 is preferably made of a high-purity material that does not emit contaminants in order to suppress the entry of impurities into the film during the film forming process on the wafer 200 in the processing chamber 201. Further, when a material having a high thermal conductivity is used as the material of the boat 217, the heat insulating cylinder 216 made of quartz at the lower portion of the boat 217 is thermally deteriorated. Therefore, the material having a low thermal conductivity is desirable. . In addition, since it is better to suppress the thermal influence from the boat 217 on the wafers 200 placed on the susceptor 218, it is desirable that the material is not induction heated by the induction heating device 206. Quartz material is used as the material of the boat 217 so as to satisfy these conditions.

  A drive control unit 237 is electrically connected to the rotation mechanism 254 and the lifting motor 248, and the drive control unit 237 is controlled at a desired timing so that the rotation mechanism 254 and the lifting motor 248 perform a desired operation. It is supposed to be.

  The induction heating device 206 is provided with a spirally formed RF coil 2061 divided into a plurality of upper and lower regions (zones). For example, as shown in FIG. 8, the lower zone is divided into five zones such as an RF coil L, an RF coil CL, an RF coil C, an RF coil CU, and an RF coil U. The RF coils divided into these five zones are controlled independently.

  In the vicinity of the induction heating device 206, radiation thermometers 263 as temperature detectors for detecting the temperature in the processing chamber 201 are installed, for example, at four locations. At least one radiation thermometer 263 may be installed, but temperature controllability can be improved by installing a plurality of radiation thermometers 263.

  A temperature control unit 238 is electrically connected to the induction heating device 206 and the radiation thermometer 263, and an energization state to the induction heating device 206 is adjusted based on temperature information detected by the radiation thermometer 263. Be able to. Then, the temperature control unit 238 controls the temperature in the processing chamber 201 at a desired timing so as to obtain a desired temperature distribution.

  The blower 2065 is electrically connected to the temperature control unit 238. The temperature control unit 238 is configured to control the operation of the blower 2065 in accordance with a preset operation recipe. By operating the blower 2065, the atmosphere in the gap between the wall body 2062 and the outer tube 205 is discharged from the opening 2066. After the atmosphere is discharged from the opening 2066, it is cooled through the radiator 2064 and discharged to the equipment downstream of the blower 2065. That is, the induction heating device 206 and the outer tube 205 can be cooled by operating the blower 2065 based on the control by the temperature control unit 238.

  The cooling medium supply unit and the cooling medium exhaust unit connected to the cooling wall 2063 are controlled by the controller 240 at a predetermined timing so that the flow rate of the cooling medium to the cooling wall 2063 becomes a desired cooling condition. It is configured. Note that it is more desirable to provide the cooling wall 2063 because it is easier to suppress heat radiation to the outside of the processing furnace 202 and the outer tube 205 is more easily cooled. However, the cooling condition by cooling the blower 2065 is desired. The cooling wall 2063 may not be provided as long as the cooling state can be controlled.

  In addition to the opening 2066, an explosion discharge opening and an explosion discharge opening opening / closing device 2067 that opens and closes the explosion discharge opening are provided at the upper end of the wall body 2062. When hydrogen gas and oxygen gas are mixed in the wall body 2062 and an explosion occurs, a predetermined large pressure is applied to the wall body 2062. For this reason, a part with comparatively weak intensity | strength, for example, the volt | bolt, screw, panel, etc. which form the wall body 2062, will be destroyed or scattered, and damage will increase. In order to minimize this damage, the explosion vent opening / closing device 2067 is configured to open the explosion vent and release the internal pressure above a predetermined pressure when an explosion occurs in the wall body 2062. Yes.

<Configuration around the processing furnace>
Next, the configuration around the processing furnace 202 in the first embodiment will be described with reference to FIG. A lower substrate 245 is provided on the outer surface of the load lock chamber 141 as a spare chamber. The lower substrate 245 is provided with a guide shaft 264 that fits with the lifting platform 249 and a ball screw 244 that screws with the lifting platform 249. An upper substrate 247 is provided on the upper ends of the guide shaft 264 and the ball screw 244 erected on the lower substrate 245. The ball screw 244 is rotated by an elevating motor 248 provided on the upper substrate 247. The lifting platform 249 is configured to move up and down as the ball screw 244 rotates.

  A hollow elevating shaft 250 is installed on the elevating table 249 in the vertical direction, and the connection between the elevating table 249 and the elevating shaft 250 is airtight. The elevating shaft 250 moves up and down together with the elevating table 249. The elevating shaft 250 passes through the top plate 251 of the load lock chamber 141. The through hole of the top plate 251 through which the elevating shaft 250 passes has a sufficient margin so as not to contact the elevating shaft 250. Between the load lock chamber 141 and the lifting platform 249, a bellows 265 as a stretchable hollow elastic body is provided so as to cover the periphery of the lifting shaft 250 in order to keep the load lock chamber 141 airtight. The bellows 265 has a sufficient amount of expansion and contraction that can accommodate the amount of elevation of the lifting platform 249, and the inner diameter of the bellows 265 is sufficiently larger than the outer shape of the lifting shaft 250, so that it does not come into contact with the expansion and contraction of the bellows 265. ing.

  A lifting substrate 252 is fixed horizontally to the lower end of the lifting shaft 250. A drive unit cover 253 is attached to the lower surface of the elevating substrate 252 through a seal member such as an O-ring in an airtight state. The elevating board 252 and the drive unit cover 253 constitute a drive unit storage case 256. With this configuration, the inside of the drive unit storage case 256 is isolated from the atmosphere in the load lock chamber 141.

  In addition, a rotation mechanism 254 of the boat 217 is provided inside the drive unit storage case 256, and the periphery of the rotation mechanism 254 is cooled by the cooling mechanism 257. The power supply cable 258 is led from the upper end of the lifting shaft 250 through the hollow portion of the lifting shaft 250 to the rotating mechanism 254 and connected thereto. A cooling channel 259 is formed in the cooling mechanism 257 and the seal cap 219, and a cooling water pipe 260 for supplying cooling water is connected to the cooling channel 259. It passes through the hollow part.

  By driving the elevating motor 248 and rotating the ball screw 244, the drive unit storage case 256 is raised and lowered via the elevating platform 249 and the elevating shaft 250.

  As the drive unit storage case 256 rises, the seal cap 219 provided in an airtight manner on the elevating substrate 252 closes the furnace port 161, which is an opening of the process furnace 202, so that wafer processing is possible. When the drive unit storage case 256 is lowered, the boat 217 is lowered together with the seal cap 219, and the wafer 200 can be carried out to the outside.

  The gas flow rate control unit 235, the pressure control unit 236, the drive control unit 237, and the temperature control unit 238 constitute an operation unit and an input / output unit, and are electrically connected to the main control unit 239 that controls the entire substrate processing apparatus 101. It is connected. These gas flow rate control unit 235, pressure control unit 236, drive control unit 237, temperature control unit 238, and main control unit 239 are configured as a controller 240. As described above, the processing furnace 202 of the substrate processing apparatus 101 in the first embodiment and the structure around the processing furnace 202 are configured.

<Substrate processing process>
Next, substrate processing steps in the substrate manufacturing method using the substrate processing apparatus in the first embodiment will be described with reference to FIGS. In the first embodiment, as a process of the substrate, a method (semiconductor device manufacturing method) of forming a semiconductor film such as silicon (Si) on a substrate such as the wafer 200 using an epitaxial growth method is used. explain. In the first embodiment, a semiconductor device manufacturing method will be described as an example. However, the substrate manufacturing method disclosed in the first embodiment is not limited to the semiconductor device manufacturing method. . For example, silicon using a second conductivity type (for example, n-type) epitaxial growth method opposite to the first conductivity type on a substrate such as the wafer 200 which is a semiconductor substrate of the first conductivity type (for example, p-type). It can also be applied to a method for manufacturing a solar cell in which a semiconductor film such as (Si) is formed to form a pn junction.

  FIG. 10 is an explanatory diagram showing a sequence of substrate processing steps. The broken line in FIG. 10 indicates the temperature in the processing chamber 201, and the solid line in FIG. 10 indicates the pressure in the processing chamber 201. In the following description, the operation of each part constituting the substrate processing apparatus 101 according to the first embodiment is controlled by the controller 240.

  First, before the boat 217 is carried into the processing chamber 201 shown in FIG. 8, the processing chamber 201 is in a standby state (standby process in FIG. 10). The standby state refers to a state in which the boat 217 is disposed in the load lock chamber 141 directly below the processing chamber 201 and a plurality of susceptors 218 on which the wafers 200 are mounted are loaded on the boat 217. .

  When the plurality of susceptors 218 on which the wafers 200 are placed are loaded into the boat 217, as shown in FIG. 8, the boat 217 holding the plurality of susceptors 218 is moved up and down by an elevator 249 by an elevator motor 248. The processing chamber 201 is loaded (boat loading) by the lifting and lowering operation of the lifting shaft 250 (boat loading step in FIG. 10). In this state, the seal cap 219 seals the lower end of the manifold 209 via the O-ring. At this time, the pressure inside the processing chamber 201 is, for example, 760 Torr (= 760 × 133.3 Pa).

Subsequently, for example, N ₂ gas is supplied into the processing chamber 201 as an inert gas, and the inside of the processing furnace 202 including the processing chamber 201 is replaced with the inert gas (N ₂ purge 1 step in FIG. 10). Note that the inert gas is supplied from an inert gas supply source (not shown) connected to the gas supply pipe 232 through the plurality of gas supply ports 2322 of the gas supply nozzle 2321.

  Subsequently, the processing chamber 201 is evacuated by the evacuation device 246 so that the inside of the processing chamber 201 has a desired pressure, and the processing chamber 201 is depressurized (step 1 of evacuation in FIG. 10).

Subsequently, the pressure in the processing chamber 201 is measured by a pressure sensor, and the APC valve (pressure regulator) 242 is feedback-controlled based on the measured pressure (pressure control step in FIG. 10). At this time, as an inert gas, for example, N ₂ gas is supplied from an inert gas supply source (not shown) connected to the gas supply pipe 232 through a plurality of gas supply ports 2322 of the gas supply nozzle 2321. The By this pressure control step, the pressure inside the processing chamber 201 is adjusted to a constant pressure among the processing pressures selected from 16000 Pa to 93310 Pa. For example, 200 Torr to 700 Torr (200 × 133.3 Pa to 700 × 133.3 Pa). Note that the pressure in the processing chamber 201 is controlled so as to maintain a constant pressure from the pressure control step to the vacuum evacuation step 2 shown in FIG.

  Then, the blower 2065 is operated so that gas or air flows between the induction heating device 206 and the outer tube 205, and the side wall of the outer tube 205, the gas supply nozzle 2321, the gas supply port 2322, and the gas exhaust port 2311 To be cooled. Cooling water as a cooling medium flows through the radiator 2064 and the cooling wall 2063, and the inside of the induction heating device 206 is cooled through the wall body 2062. Further, a high frequency current is applied to the induction heating device 206 so that the wafer 200 has a desired temperature, and an induced current (eddy current) is generated in the susceptor 218.

  Specifically, the induction heating device 206 induction-heats at least a plurality of susceptors 218 held in the boat 217 in the processing furnace 202 to heat the wafers 200 accommodated in the susceptor 218 (temperature raising step in FIG. 10). ). That is, when a high-frequency current is passed through the induction heating device 206, a high-frequency electromagnetic field is generated inside the processing furnace 202, and an eddy current is generated in the susceptor 218 that is a derivative by the high-frequency electromagnetic field. In the susceptor 218, induction heating occurs due to eddy current, and the susceptor 218 is heated. Specifically, the eddy current is generated at the peripheral portion of the susceptor 218 that is a derivative, and the peripheral portion of the susceptor 218 is mainly heated by induction heating by the induction heating device 206. In the susceptor 218 whose peripheral portion is heated, radiant heat is generated, and the wafer 200 mounted on the susceptor 218 is heated by the radiant heat. Further, in the susceptor 218 whose peripheral portion is heated, heat flows from the peripheral portion of the susceptor 218 to the central portion of the susceptor 218 by heat conduction, and the entire susceptor 218 (peripheral portion and central portion) is heated. For this reason, when the susceptor 218 is heated, heat is transferred to the wafer 200 mounted on the susceptor 218 by heat conduction, and the wafer 200 is heated.

  As described above, the substrate processing apparatus 101 according to the first embodiment employs a method of heating the wafer 200 by the induction heating method. At this time, the amount of heating is often insufficient even if the wafer 200 is directly induction-heated by the high-frequency electromagnetic field generated by flowing a high-frequency current through the induction heating device 206. Therefore, in this induction heating method, the susceptor 218 which is a derivative is used so that it can be efficiently heated by induction heating. That is, the induction heating type substrate processing apparatus 101 uses the susceptor 218 so as to be efficiently heated by induction heating. Then, after the susceptor 218 is efficiently heat-treated by induction heating, the wafer 200 on the heated susceptor 218 is heated by heat conduction from the susceptor 218. From this, the susceptor 218 has a function of mounting the wafer 200 and, as an important function thereof, has a function as a heating source that is induction-heated by a high-frequency electromagnetic field and heats the wafer 200. .

At this time, the state of energization to the induction heating device 206 is feedback-controlled based on the temperature information detected by the radiation thermometer 263 so that the inside of the processing chamber 201 has a desired temperature distribution. At this time, the blower 2065 is controlled by a preset control amount so that the temperature of the outer wall of the outer tube 205 is cooled to, for example, 600 ° C. or lower, which is much lower than the temperature at which the film is grown on the wafer 200. The wafer 200 is heated at a constant temperature among processing temperatures selected within a range of 700 ° C. to 1200 ° C. For example, the wafer 200 is heated to 1100 to 1200 ° C. Further, for example, when SiHCl ₃ (trichlorosilane) is used as the source gas and hydrogen (H ₂ ) is used as the carrier gas, the susceptor 218 is induction-heated to 1150 ° C. or higher.

  In addition, the wafer 200 is heated at a constant temperature among the processing temperatures selected in the range of 700 ° C. to 1200 ° C. At that time, the blower 2065 has the outer wall of the outer tube 205 at any processing temperature. The temperature is controlled by a preset control amount so that the temperature is much lower than the temperature at which the film is grown on the wafer 200, for example, 600 ° C. or lower.

  Subsequently, when the boat 217 is rotated by the rotation mechanism 254, the susceptor 218 and the wafer 200 placed on the susceptor 218 are rotated.

Next, the first gas supply source 180, the second gas supply source 181, and the third gas supply source 182 include SiH ₂ Cl as Si-based and SiGe (silicon germanium) -based source gases (processing gases). ₂ (dichlorosilane), SiHCl ₃ (trichlorosilane), etc., and doping gas (treatment gas), such as B ₂ H ₆ (diborane), BCl ₃ (boron trichloride), PH ₃ (phosphine), etc., carrier gas Hydrogen (H ₂ ) is enclosed as a (treatment gas). When the temperature of the wafer 200 is stabilized, the respective processing gases are supplied from the first gas supply source 180, the second gas supply source 181, and the third gas supply source 182. Then, after the openings of the MFCs 183, 184, and 185 are adjusted so as to obtain a desired flow rate, the valves 177, 178, and 179 are opened. Accordingly, each processing gas flows through the gas supply pipe 232 and flows into the gas supply nozzle 2321. The flow rate flowing through the gas supply nozzle 2321 varies depending on the number of substrates processed in one substrate processing step, but is, for example, 26.25 slm to 262.5 slm. In addition, although [slm] is used as a unit of flow rate, this [slm] represents the flow rate per minute in the standard state (atmospheric pressure: 101325 Pa, 0 ° C.) in liters. Therefore, 1 slm can be expressed as 1.67 × 10 ⁻⁶ m ³ / sec in terms of standard state gas. Hereinafter, the gas flow rate will be described using [slm].

  Since the cross-sectional area of the flow path of the gas supply nozzle 2321 is sufficiently larger than the opening area of the plurality of gas supply ports 2322, the pressure is higher than the processing chamber 201, and the gas ejected from each gas supply port 2322 is uniform. It is supplied to the processing chamber 201 at a flow rate and a flow rate. For example, in this embodiment, the gas supply port 2322 has an opening diameter of φ1.5 mm, whereas the main flow path of the gas supply nozzle 2321 (the flow path connected to each gas supply port 2322) is φ35 mm or more. Yes. Thus, by sufficiently increasing the cross-sectional area of the main flow path, the pressure loss in the gas supply nozzle 2321 can be reduced even if the flow rate of the processing gas flowing through the gas supply nozzle 2321 is increased to, for example, 100 slm or more. The flow rate of the processing gas blown from the plurality of gas supply ports 2322 can be made uniform. The gas supplied to the processing chamber 201 passes through the processing chamber 201, is discharged to the gas exhaust port 2311, and is then exhausted from the gas exhaust port 2311 to the gas exhaust pipe 231. When the processing gas passes through the gap between the susceptors 218, the processing gas is heated from each of the susceptors 218 that are vertically adjacent to each other, contacts the heated wafer 200, and is epitaxially grown on the surface of the wafer 200 by silicon (Si). A semiconductor film such as is formed (deposition step in FIG. 10).

When a preset time elapses, the temperature of the processing chamber 201 is decreased (temperature decrease in FIG. 10). Then, the inside of the processing chamber 201 is evacuated by the vacuum exhaust device 246 so as to have a desired pressure, and the inside of the processing chamber 201 is depressurized (step 2 of vacuum exhausting in FIG. 10). Subsequently, for example, N ₂ gas is supplied as an inert gas from an inert gas supply source (not shown), the inside of the processing chamber 201 is replaced with the inert gas, and the pressure in the processing chamber 201 is increased. Is returned to normal pressure (N ₂ purge 2 step in FIG. 10).

  Thereafter, the seal cap 219 is lowered by the elevating motor 248, the lower end of the manifold 209 is opened, and the processed wafer 200 is carried out from the lower end of the manifold 209 to the outside of the outer tube 205 while being held by the boat 217. (Boat unloading) is performed (boat unloading step in FIG. 10). Thereafter, the processed wafer 200 is taken out from the boat 217 (wafer discharge). As described above, a semiconductor film can be formed on the wafer 200.

<Details of film formation process>
Here, in the film forming step shown in FIG. 10, when the temperature of the gas flowing through the gas supply nozzle 2321 is heated to a high temperature, a product generated by thermal decomposition or gas reaction is processed before reaching the wafer 200. Attaches around the room.

For example, when a compound having a chlorine atom in the chemical formula is used as a raw material gas to form a film on a substrate, the raw material gas is thermally decomposed and polymerized (polymerized). A product is produced. Further, for example, when SiHCl ₃ (trichlorosilane) is used as the source gas and hydrogen (H ₂ ) is used as the carrier gas and these mixed gases are supplied from the gas supply nozzle 2321, the temperature of the mixed gas becomes 900 ° C. or more. A product produced by the reaction of the gas is formed and formed on a member other than the wafer 200 in the processing furnace 202. That is, the generated substance adheres to members around the processing chamber.

  For example, when such a generated substance adheres to a plurality of gas supply ports 2322 formed in the gas supply nozzle 2321, the opening area of the gas supply port 2322 becomes narrow, so that the amount of gas supplied from the gas supply port 2322 is reduced. Not stable. For this reason, the film quality and the film thickness of the wafers 200 arranged in each stage become a cause of variation. In addition, when the generated material is deposited thickly in the gas supply port 2322, the gas supply port 2322 may be blocked. In this case, the pressure in the gas supply nozzle 2321 is overpressurized, causing the gas supply nozzle 2321 to break down. In addition, when the above-described substrate processing step is repeatedly performed in a state where the product substance is formed in the gas supply port 2322, the formed product substance is destroyed due to the stress caused by the temperature cycle. The gas supply port 2322 may break down. Further, even if the gas supply port 2322 is not broken, the attached generated material is peeled off and reaches the wafer 200 which is the substrate in the processing chamber 201 or the processing chamber 201 and becomes a foreign substance (particle).

  In addition, for example, if a product is formed on the upstream side of the gas supply port 2322 of the gas supply nozzle 2321, the flow path of the gas supply nozzle 2321 is narrowed. In this case as well, the gas from the gas supply port 2322 The supply amount is not stable. For this reason, the film quality and the film thickness of the wafers 200 arranged in each stage become a cause of variation. Similarly to the case where the generated substance adheres to the gas supply port 2322 described above, if the upstream side of the gas supply nozzle 2321 is blocked, the gas supply nozzle 2321 may be broken. Further, when a product material is formed on the inner wall of the gas supply nozzle 2321, the formed product material is destroyed due to stress caused by the temperature cycle, and the gas supply nozzle 2321 is destroyed or foreign matter is contained in the processing chamber 201. Will occur.

  Therefore, the inventor of the present application has studied a technique for suppressing the product generated by thermal decomposition or gas reaction from adhering to the periphery of the processing chamber, and found the configuration of the first embodiment. FIG. 11 is a main part sectional view schematically showing the main part of the processing furnace 202 shown in FIG. FIG. 12 is an enlarged cross-sectional view showing a cross-sectional structure around the first region 2321a of the gas supply nozzle 2321 shown in FIG. FIG. 13 is an enlarged cross-sectional view showing a cross-sectional structure around the second region 2321b of the gas supply nozzle 2321 shown in FIG.

  First, in the first embodiment, the wafer 200 that is the substrate to be processed is heated by induction heating the susceptor 218 that is the induction heating body using the induction heating method as described above. The substrate heating method includes a resistance heating method in addition to the induction heating method as in the first embodiment. In a resistance heating type substrate processing apparatus, for example, a resistance wire is laid in a coil shape along the outer periphery of a cylindrical processing furnace, and the entire processing furnace is heated by Joule heat generated by passing a current through the laid resistance wire. Is configured to do. In the resistance heating type substrate processing apparatus configured as described above, not only the substrate disposed inside the processing furnace but also the reaction furnace itself is heated. For this reason, in the resistance heating method, the gas supply path in the processing furnace is also at a high temperature, and the above-described generated substances are likely to adhere to members constituting the gas supply path and the like. On the other hand, in the first embodiment, since the induction heating method is used, even if the susceptor 218 and the wafer 200 arranged in the processing chamber 201 are induction-heated, the inner tube 230 and the gas supply that form the processing chamber 201 are used. The nozzle 2321 and the outer tube 205 are not induction-heated or are difficult to be induction-heated. For this reason, the temperature rise of the processing gas flowing in the gas supply nozzle 2321 can be suppressed. That is, it is possible to suppress the formation of the product generated by the above-described thermal decomposition or gas reaction in the gas supply nozzle 2321.

  However, even when the induction heating method is applied, radiant heat is generated from the susceptor 218 if the susceptor 218 as the induction heating body is induction heated to a high temperature exceeding 1000 ° C., for example. When the radiant heat reaches the gas supply nozzle 2321, the temperature of the gas supply nozzle 2321 increases. As a result, a product produced by the above-described thermal decomposition or gas reaction is formed in the gas supply nozzle 2321.

  Therefore, in the first embodiment, as shown in FIG. 11, the inside of the processing chamber 201 is covered with the inner tube 230, and the gas supply nozzle 2321 is disposed outside the inner tube 230. Specifically, the gas supply nozzle 2321 is disposed in the gap SP between the inner tube 230 and the outer tube 205. In other words, the inner tube 230 is disposed between the gas supply nozzle 2321 and the processing chamber 201. For this reason, the radiant heat which generate | occur | produces from the susceptor 218 heated by induction can be attenuate | damped by the side wall 230a of the inner tube 230 which consists of quartz materials, for example. That is, in the first embodiment, the side wall 230a of the inner tube 230 functions as a radiation suppression unit that suppresses radiation heat from the susceptor 218 that is an induction heating body from being radiated to the gas supply nozzle 2321. Further, since the side wall 230a of the inner tube 230 and the gas supply nozzle 2321 are arranged apart from each other, the amount of heat transmitted from the heated inner tube 230 can be reduced by absorbing radiant heat. For this reason, the temperature rise of the gas supply nozzle 2321 due to the radiant heat generated in the susceptor 218 can be suppressed.

  By the way, as described above, the gas supply nozzle 2321 supplies, for example, a processing gas that is a mixed gas of a source gas, a doping gas, and a carrier gas to the wafer 200 that is a substrate disposed in the processing chamber 201. Is arranged. For this reason, an opening FH as a flow port through which the processing gas blown from the gas supply nozzle 2321 flows to the processing chamber 201 is formed in the side wall 230a of the inner tube 230. In the first embodiment, since the processing gas is supplied from the peripheral side of the wafer 200, the opening FH is provided on the peripheral side of the wafer 200 disposed in the processing chamber 201. Further, since the plurality of gas supply ports 2322 and the opening FH, which are process gas blowout ports, are arranged so as to face each other, the process gas blown out from the gas supply port 2322 is opened as a circulation port. It passes through the FH and reaches the wafer 200 disposed in the processing chamber 201.

  Here, as shown in FIG. 11, the gas supply nozzle 2321 includes a first region 2321a in which a plurality of gas supply ports 2322 are formed, and a second region 2321b located on the upstream side of the gas in the first region 2321a. Have. In the region facing the first region 2321a of the inner tube 230, an opening FH is formed as shown in FIG. 12, but in the region facing the second region 2321b, as shown in FIG. No opening is formed in the inner tube 230. In other words, the side wall 230a of the inner tube 230 facing the second region 2321b suppresses the radiation heat from the susceptor 218 that is the induction heating body from being radiated to the second region 2321b of the gas supply nozzle 2321. It functions as a part. Therefore, in the second region 2321b, the radiant heat generated in the susceptor 218 is absorbed by the side wall 230a of the inner tube 230, and the amount of heat reaching the gap SP provided between the side wall 205a of the outer tube 205 is reduced to half or less. Can do. For example, when the thickness of the side wall 230a of the inner tube 230 made of quartz material is about 5 mm, about 60% of radiant heat can be blocked. In detail, although the transmittance | permeability of the radiant heat with respect to the inner tube 230 changes with wavelength bands of radiant heat, about 60% of radiant heat can be interrupted as an average of all the wavelength bands.

  Thus, by arranging the side wall 230a of the inner tube 230 between the gap SP and the processing chamber 201 in the second region 2321b, the temperature increase of the second region 2321b of the gas supply nozzle 2321 can be suppressed. For example, even when the susceptor 218 is induction-heated to 1150 ° C. or higher, the temperature of the second region 2321b of the gas supply nozzle 2321 can be made lower than 900 ° C. For this reason, it is possible to prevent or suppress the formation of the above-described product substance in the second region 2321b.

  In addition, by suppressing the temperature rise in the second region 2321b, the initial temperature of the processing gas sent to the first region 2321a located downstream of the second region 2321b can be reduced. For this reason, the temperature rise of the process gas in the 1st area | region 2321a can be suppressed. Thus, by suppressing the temperature rise of the processing gas in the first region 2321a, it is possible to suppress the formation of the above-described product substance in the first region 2321a. That is, it is possible to suppress the generated substance from adhering to the plurality of gas supply ports 2322 formed in the first region 2321a.

  Further, from the viewpoint of suppressing the temperature rise of the gas supply nozzle 2321 in the first region 2321a, as shown in FIG. 12, the opening width W1 of the opening FH as the flow port formed in the inner tube 230 is the gas supply. The nozzle 2321 is preferably narrower than the nozzle width W2 in the first region 2321a. For example, in the present embodiment, the nozzle width W2 of the gas supply nozzle 2321 in the first region 2321a is about 35 to 45 mm, whereas the opening width W1 of the opening FH is about 1.5 mm. That is, the opening FH is preferably formed with a width smaller than that of the gas supply nozzle 2321. Thus, the radiant heat generated by the susceptor 218 shown in FIG. 11 is easily attenuated by the side wall 230a of the inner tube 230 before reaching the first region 2321a of the gas supply nozzle 2321. That is, it becomes difficult for radiant heat to reach the first region 2321 a of the gas supply nozzle 2321. As a result, the temperature rise of the processing gas due to radiant heat in the first region 2321a of the gas supply nozzle 2321 can be suppressed. Further, by suppressing the temperature rise of the processing gas in the first region 2321a, it is possible to suppress the above-described generated substances from adhering to the inner wall of the first region 2321a of the gas supply nozzle 2321 and the gas supply port 2322. .

  Further, from the viewpoint of suppressing the temperature increase of the gas supply nozzle 2321 in the first region 2321a, the opening width W1 of the opening FH as a flow port is larger than the plate thickness of the side wall 230a of the inner tube 230 as shown in FIG. It is preferable to form it small. For example, in the first embodiment, the plate thickness T1 of the side wall 230a of the inner tube 230 is about 5 mm. Thereby, the radiant heat generated by the susceptor 218 shown in FIG. 11 and directed to the gas supply nozzle 2321 is easily attenuated by the side wall 230 a of the inner tube 230.

  Further, if the opening width W1 of the opening FH is equal to or smaller than the opening width W3 of the gas supply port 2322 of the gas supply nozzle 2321, a temperature rise around the gas supply port 2322 can be suppressed.

  However, when the opening width W1 of the opening FH is narrowed, the processing gas blown from the gas supply port 2322 is difficult to pass through the opening FH. Therefore, in the first embodiment, as shown in FIG. 11, the opening shape of the opening FH as the circulation port is formed in a slit shape that is long along the extending direction of the gas supply nozzle 2321. In other words, the opening shape of the opening FH as a circulation port is formed in a slit shape so that the opening height L1 in the height direction intersecting the width direction is longer than the opening width W1 (see FIG. 12). ing. In the first embodiment, a plurality of gas supply ports 2322 are arranged in the gas supply nozzle 2321, but by increasing the opening height L <b> 1 of the opening FH, the opening FH is connected to the plurality of gas supply ports 2322. It arrange | positions so that it may oppose. As described above, since the opening height L1 of the opening FH is formed in a slit shape, even if the opening FH is formed with a width smaller than the gas supply port 2322, the gas supply port The processing gas blown from 2322 can be efficiently supplied into the processing chamber 201 to reach the wafer 200.

  Further, from the viewpoint of efficiently supplying the processing gas blown from the gas supply port 2322 into the processing chamber 201 and reaching the wafer 200, the pressure distribution in the processing furnace 202 in the film forming process shown in FIG. It is preferable that the pressure in the SP is higher than the pressure in the processing chamber 201. If the pressure in the processing chamber 201 is lower than the pressure in the gap SP, for example, even if the opening FH is formed with a width smaller than the gas supply port 2322, it is easy to pass the processing gas. is there.

  In the first embodiment, the outer tube 205 and the inner tube 230 are each formed in a dome shape, and are formed so that the inside of the outer tube 205 can be maintained under reduced pressure. More specifically, as shown in FIG. 11, a lid 205b that hermetically seals the side wall 205a is formed at the upper end of the outer tube 205. In addition, a lid 230b that hermetically seals the side wall 230a is formed at the upper end of the inner tube 230. Further, a gas exhaust port 2311 as an exhaust part is formed below the outer tube 205, and is connected to a gas exhaust pipe 231 (see FIG. 8) as an exhaust part. The gas exhaust port 2311 and the gas exhaust pipe 231 (see FIG. 8) communicate with the processing chamber 201 in the inner tube 230. For this reason, when the gas in the processing chamber 201 is exhausted from the gas exhaust port 2311, the inside of the processing chamber 201 is decompressed. When the pressure difference between the gap SP and the processing chamber 201 increases, the gas in the gap SP flows into the processing chamber 201 through the opening FH, and the gap SP is depressurized.

  Further, as shown in FIG. 8, on the downstream side of the gas exhaust pipe 231, a vacuum exhaust device 246 such as a vacuum pump is provided via a pressure sensor (not shown) as a pressure detector and an APC valve 242 as a pressure regulator. Is connected. A pressure control unit 236 is electrically connected to the pressure sensor and the APC valve 242, and the pressure control unit 236 adjusts the opening degree of the APC valve 242 based on the pressure detected by the pressure sensor. Control is performed at a desired timing so that the pressure in the processing chamber 201 becomes a desired pressure.

  Further, as shown in FIG. 8, the gas supply pipe 232 connected to the gas supply nozzle 2321 is divided into, for example, three on the upstream side, and valves 177, 178, 179 and an MFC 183 as a gas flow rate control device, The first gas supply source 180, the second gas supply source 181 and the third gas supply source 182 are connected to the first gas supply source 180 and the third gas supply source 182, respectively. A gas flow rate control unit 235 is electrically connected to the MFCs 183, 184, 185 and the valves 177, 178, 179. The gas flow rate control unit 235 allows the flow rate of the gas supplied to the gas supply nozzle 2321 to be desired. The flow rate is controlled at a desired timing.

  In this manner, the processing furnace 202 is formed so that the inside of the gap SP inside the outer tube 205 and the inside of the processing chamber 201 can be controlled in a reduced pressure state. For this reason, it is possible to easily control the gas flow between the gap SP and the processing chamber 201.

<Typical effects of the first embodiment>
As described above, according to the technical idea described in the first embodiment, at least one of the plurality of effects described below is achieved.

  (1) According to the first embodiment, from the gas supply port 2322 as the blowout port of the gas supply nozzle 2321 toward the opening FH as the distribution port and the wafer 200 as the substrate that is the object to be processed. Process gas can be blown out. In addition, since the wafer 200 can be heated by radiant heat from the susceptor 218 serving as an induction heating body, it is possible to process a good substrate.

  (2) Further, according to the first embodiment, since the susceptor 218 serving as an induction heating body is used as a substrate heating source, even if the susceptor 218 disposed in the processing chamber 201 is induction-heated, The inner tube 230, the gas supply nozzle 2321, and the outer tube 205 forming the processing chamber 201 are not induction-heated or difficult to be induction-heated. For this reason, the temperature rise of the processing gas flowing in the gas supply nozzle 2321 can be suppressed.

  (3) According to the first embodiment, more specifically, the gas supply nozzle 2321 is disposed in the gap SP between the inner tube 230 and the outer tube 205. For this reason, the radiant heat which generate | occur | produces from the susceptor 218 heated by induction can be attenuate | damped by the side wall 230a of the inner tube 230 which consists of quartz materials, for example. For this reason, the temperature rise of the gas supply nozzle 2321 due to the radiant heat generated in the susceptor 218 can be suppressed.

  (4) In particular, in the first embodiment, the gas supply nozzle 2321 includes a first region 2321a in which a plurality of gas supply ports 2322 are formed, and a second region 2321b located on the upstream side of the gas in the first region 2321a. And have. And although the opening part FH is formed in the area | region facing the 1st area | region 2321a of the inner tube 230, the opening part is not formed in the inner tube 230 in the area | region facing the 2nd area | region 2321b. In other words, the side wall 230a of the inner tube 230 facing the second region 2321b suppresses the radiation heat from the susceptor 218 that is the induction heating body from being radiated to the second region 2321b of the gas supply nozzle 2321. It functions as a part. For this reason, in the second region 2321b, the radiant heat generated by the susceptor 218 can be absorbed by the side wall 230a of the inner tube 230, and the radiant heat reaching the gap SP can be reduced.

  (5) Further, in the second region 2321b of the gas supply nozzle 2321, since the temperature rise of the processing gas flowing in the gas supply nozzle 2321 can be suppressed, the thermal decomposition or gas reaction occurs in the second region 2321b. , The formation of the product can be suppressed.

  (6) Further, by suppressing the formation of the product substance in the second region 2321b, it is possible to prevent the processing gas flow path from being blocked in the second region 2321b of the gas supply nozzle 2321. it can.

  (7) Further, the product substance passes through the gas supply port 2322 and the opening FH from the second region 2321b of the gas supply nozzle 2321 and is disposed in the process chamber 201 or the process chamber 201. It can be suppressed that the particles reach the wafer 200 as a substrate and become particles.

  (8) Further, according to the first embodiment, the opening width W1 of the opening FH as the flow port formed in the inner tube 230 is narrower than the nozzle width W2 in the first region 2321a of the gas supply nozzle 2321. It has become. For this reason, the radiant heat generated by the susceptor 218 serving as a dielectric heating body hardly reaches the first region 2321a of the gas supply nozzle 2321. As a result, the temperature rise of the processing gas due to radiant heat in the first region 2321a of the gas supply nozzle 2321 can be suppressed.

  (9) The opening width W1 of the opening FH as a circulation port is formed smaller than the plate thickness T1 of the side wall 230a of the inner tube 230. Thereby, the radiant heat generated by the susceptor 218 shown in FIG. 11 and directed to the gas supply nozzle 2321 is easily attenuated by the side wall 230 a of the inner tube 230. As a result, the temperature rise of the processing gas due to radiant heat in the first region 2321a of the gas supply nozzle 2321 can be suppressed.

  (10) In this way, in the first region 2321a of the gas supply nozzle 2321, the temperature rise of the processing gas flowing in the gas supply nozzle 2321 can be suppressed, and therefore, in the first region 2321a, pyrolysis and gas By the reaction, formation of a product substance can be suppressed.

  (11) Further, by suppressing the formation of the product substance in the first region 2321a, it is possible to prevent the processing gas flow path from being blocked in the first region 2321a of the gas supply nozzle 2321. it can.

  (12) Further, the product substance passes through the opening FH from the first region 2321a of the gas supply nozzle 2321, and the wafer as a substrate which is a processing target disposed in the processing chamber 201 or the processing chamber 201. Reaching 200 and becoming particles.

  (13) Further, according to the first embodiment, the opening shape of the opening FH as the circulation port is such that the opening height L1 in the height direction intersecting the width direction is longer than the opening width W1. It is formed in a slit shape. As described above, since the opening height L1 of the opening FH is formed in a slit shape, even if the opening FH is formed with a width smaller than the gas supply port 2322, the gas supply port The processing gas blown from 2322 can be efficiently supplied into the processing chamber 201 to reach the wafer 200.

  (14) Further, according to the first embodiment, the outer tube 205 and the inner tube 230 are each formed in the shape of a ceiling, and are formed so that the inside of the outer tube 205 can be maintained under reduced pressure. For this reason, it is possible to easily control the gas flow between the gap SP and the processing chamber 201.

  (15) Further, by using the substrate processing apparatus 101 described in the first embodiment in the substrate processing step in the substrate manufacturing method, in the substrate manufacturing method, one or more of the plurality of effects described above can be used. There is an effect.

  (16) Further, by using the substrate processing apparatus 101 described in the first embodiment in the substrate processing step in the semiconductor device manufacturing method, one of the above-described effects can be obtained in the semiconductor device manufacturing method. There are the above effects.

  (17) Further, by using the substrate processing apparatus 101 described in the first embodiment in the substrate processing step in the solar cell manufacturing method, one of the plurality of effects described above in the solar cell manufacturing method. There are the above effects.

(Embodiment 2)
In the second embodiment, a purge gas supply unit is arranged in the gap SP described in the first embodiment in addition to the gas supply nozzle 2321 so that the pressure in the gap SP and in the processing chamber 201 can be easily controlled. An aspect is demonstrated.

  FIG. 14 is a main part cross-sectional view schematically showing a main part of the processing furnace in the second embodiment which is a modification of the processing furnace processing furnace shown in FIG. 11. FIG. 15 is an explanatory diagram showing a sequence of substrate processing steps in the second embodiment which is a modification of the substrate processing steps shown in FIG.

  In the first embodiment, the gas supply nozzle 2321 is disposed in the gap SP between the outer tube 205 and the inner tube 230, and the wafer 200 disposed in the processing chamber 201 from the gas supply port 2322 of the gas supply nozzle 2321. The configuration for blowing out the processing gas has been described. Further, it has been described that the blown processing gas passes through the opening FH, which is a circulation port formed in the inner tube 230, and reaches the wafer 200 disposed in the processing chamber 201.

  Here, when a part of the processing gas blown out from the gas supply port 2322 does not pass through the opening FH of the inner tube 230, it may stay in the gap SP. Since the side wall 230a of the inner tube 230 is arranged inside the gap SP, the product produced by thermal decomposition or gas reaction described in the first embodiment is hardly formed in the gap SP. However, since the inner tube 230 is heated by the radiant heat of the susceptor 218 as the induction heating body, if the processing gas is retained, the inner tube 230 is gradually decomposed or decomposed on the outside of the side wall 230a of the inner tube 230 or the bottom surface of the gap SP. The product resulting from the reaction is formed and adheres.

  Then, when the substrate processing step described in the first embodiment is repeatedly performed in a state where the generated material is formed on the outside of the side wall 230a of the inner tube 230 or the bottom surface of the gap SP, the temperature cycle is performed. Due to the stress caused by the film, the formed product may be destroyed, and the inner tube 230 may be destroyed accordingly.

  Further, since the processing gas staying in the gap SP does not contribute to the film forming process on the wafer 200, the processing gas staying in the gap SP can be reduced from the viewpoint of improving the use efficiency of the processing gas. preferable.

  Therefore, the inventor of the present application has studied a technique for suppressing a part of the processing gas blown from the gas supply port 2322 from staying in the gap SP, and found the configuration of the second embodiment. The difference between the technique described in the first embodiment and the technique of the second embodiment is the point described below, and the other points are the same as in the first embodiment. Therefore, in the second embodiment, differences from the first embodiment will be described, and a duplicate description will be omitted.

  The difference between the substrate processing apparatus 101a shown in FIG. 14 and the substrate processing apparatus 101 shown in FIG. 11 is that a purge gas supply unit for supplying a purge gas is further provided in the gap SP. Further, the difference between the substrate processing step shown in FIG. 15 and the substrate processing step shown in FIG. 10 is that a step of supplying a purge gas into the gap SP is added before and after the film forming step.

14 and FIG. 15, the film forming process (see FIG. 15) is performed in the substrate processing process of the substrate manufacturing method (semiconductor device manufacturing method, solar cell manufacturing method) of the second embodiment. ) Has a step of supplying purge gas into the gap SP from a purge gas supply nozzle 2331 as a purge gas supply unit arranged in the gap SP (H ₂ purge 1 step in FIG. 15). Specifically, as shown in FIG. 15, the purge gas is supplied before the temperature raising step. In this way, by supplying the purge gas into the gap SP before the temperature raising step, for example, even if the processing gas remains in the gap SP in the most recent substrate processing step, this is purged with the purge gas. Can be replaced. For this reason, the processing gas remaining in the gap SP can be removed before the temperature rises, and the formation of a product substance due to the above-described thermal decomposition or gas reaction can be suppressed.

  Here, the following configuration is preferable from the viewpoint of efficiently replacing the gas in the gap SP with the purge gas.

  First, from the viewpoint of replacing the purge gas over the entire area of the gap SP, as shown in FIG. 14, the purge gas supply nozzle 2331 as the purge gas supply unit is opposite to the position where the opening FH of the inner tube 230 is formed. It is preferable to form. In other words, the gas supply nozzle 2321 and the purge gas supply nozzle 2331 are preferably provided on the opposite sides via the inner tube 230. Since gas is blown out from the gas supply nozzle 2321 in the gap SP around the opening FH of the inner tube 230, gas convection is likely to occur. On the other hand, gas tends to stay in the gap SP on the opposite side of the opening FH. Therefore, by providing the purge gas supply nozzle 2331 on the opposite side of the position where the opening FH is formed, it is possible to suppress gas retention and to bring the purge gas over the entire area in the gap SP. As a result, the gas in the gap SP can be efficiently replaced with the purge gas.

In the present embodiment, H ₂ gas having a specific gravity lower than that of the source gas described in the first embodiment (for example, SiHCl ₃ (trichlorosilane)) is used as the purge gas. As described above, when a gas having a specific gravity lower than that of the source gas is used as the purge gas, the gas in the gap SP is efficiently replaced with the purge gas when the purge gas is supplied to a position where the gap SP is low. Therefore, as shown in FIG. 14, in the second embodiment, the height of the purge gas supply nozzle 2331 is lower than the height of the gas supply nozzle 2321. The purge gas supply port 2332 formed in the purge gas supply nozzle 2331 is formed at a position lower than the gas supply port 2322 of the gas supply nozzle 2321. Accordingly, the gas staying below the gap SP with the H ₂ gas as the purge gas blown from the purge gas supply nozzle 2331 can be efficiently conveyed upward. The gas carried upward flows into the processing chamber 201 from the opening FH. Thereby, the gas in the gap SP can be efficiently replaced with the purge gas. In the second embodiment, the configuration in which the purge gas supply nozzle 2331 is disposed has been described as an example. However, the configuration is not limited to this configuration. For example, the purge gas supply unit 233 which is not provided with the purge gas supply nozzle 2331 and is formed at a position lower than the gas supply port 2322 of the gas supply nozzle 2321 on the side wall 205a of the outer tube 205 facing the gap SP and connected to the gap SP. Therefore, the purge gas can be supplied into the gap SP.

At this time, H ₂ gas as the purge gas can also be supplied from the gas supply pipe 232 connected to the gas supply nozzle 2321. In this case, since the purge gas is supplied from a plurality of positions in the gap SP, the gas in the gap SP can be more reliably replaced with the purge gas.

  Further, according to the second embodiment, by providing the purge gas supply unit that supplies the purge gas in the gap SP, the pressure in the gap SP and the pressure in the processing chamber 201 are higher than those in the first embodiment. It can be controlled with accuracy. Specifically, the purge gas supply nozzle 2331 is connected to a purge gas supply unit 233 formed on the side wall 205a of the outer tube 205 facing the gap SP.

  The purge gas supply unit 233 is connected to a purge gas supply source 188 via a valve 186 and an MFC (Mass Flow Controller) 187 as a gas flow rate control device on the upstream side. A purge gas flow rate control unit 235a is electrically connected to the MFC 187 and the valve 186, and the purge gas flow rate control unit 235a is controlled at a desired timing so that the flow rate of the purge gas to be supplied becomes a desired flow rate. It has become. The purge gas supply unit 233 is branched upstream, and is connected to an inert gas supply source (not shown) via a valve (not shown) and an MFC as an inert gas flow control device.

  That is, the substrate processing apparatus 101a according to the second embodiment includes a gas supply pipe 232 as a gas supply section that supplies a processing gas to the gas supply nozzle 2321 and a gas exhaust pipe 231 as an exhaust section that exhausts the inside of the processing chamber 201. have. The gas flow control unit 235 controls the gas flow rate of the gas supply unit, the pressure control unit 236 controls the pressure of the exhaust unit, and the purge gas flow rate control unit 235a controls the gas flow rate of the purge gas supply unit 233. ing. For this reason, it can be easily controlled so that the pressure in the gap SP is higher than the pressure in the processing chamber 201. As a result, the gas carried by the purge gas above the gap SP can efficiently flow into the processing chamber 201.

Subsequent to the H ₂ purge 1 step shown in FIG. 15, the temperature raising step is performed as described in the first embodiment. In the temperature raising step and the subsequent film formation step, H ₂ gas as the purge gas is continuously supplied from the purge gas supply unit 233 shown in FIG. The purge gas flow rate control unit 235a and the pressure control unit 236 control the purge gas flow rate and the exhaust unit pressure, respectively, so that the pressure in the gap SP is maintained higher than the pressure in the processing chamber 201. In this state, as the film forming process shown in FIG. 15, the processing gas described in the above embodiment is supplied from the gas supply pipe 232 as a gas supply unit. That is, before the film forming process, the purge gas is supplied in advance into the gap SP, and the processing gas is supplied from the gas supply unit in a state where the pressure in the gap SP is higher than the pressure in the processing chamber 201. Further, the pressure in the gap SP is maintained higher than the pressure in the processing chamber 201 even during the film forming process.

  Thus, when the processing gas is blown out from the gas supply port 2322 of the gas supply nozzle 2321, the pressure in the gap SP is higher than the pressure in the processing chamber 201. Leaking into the inside can be suppressed. The flow rate of the purge gas to be supplied varies depending on the number of substrates processed in one substrate processing step, but is supplied at a flow rate of about 2 slm to 10 slm, for example. If the flow rate of the purge gas is 4 slm or more, it is possible to substantially prevent the generated substance from adhering in the gap SP during one substrate processing step.

After the film formation step shown in FIG. 15 is completed and the semiconductor film is formed on the wafer 200, at least the supply of the source gas and the doping gas among the processing gases supplied from the gas supply pipe 232 as the gas supply unit. To stop. On the other hand, the purge gas supply unit 233 continues to supply H ₂ gas as the purge gas into the gap SP. As a result, the source gas and the doping gas remaining in the gap SP can be replaced with the purge gas, so that the formation of a product substance in the gap SP is suppressed in the subsequent temperature lowering step (see FIG. 15). Can do.

At this time, H ₂ gas as the purge gas can also be supplied from the gas supply pipe 232 connected to the gas supply nozzle 2321. The supply source of the H ₂ gas as the purge gas can also be used as the third gas supply source 182 that is the supply source of the carrier gas shown in FIG. 8, for example. In this case, since the purge gas is supplied from a plurality of positions in the gap SP, the gas in the gap SP can be more reliably replaced with the purge gas.

Subsequent steps are the same as those in the first embodiment, and a duplicate description is omitted. In the second embodiment, since the purge gas supply unit 233 is provided in addition to the gas supply pipe 232, in the N ₂ purge 1 process and the N ₂ purge 2 process shown in FIG. N ₂ gas as an inert gas is supplied from the supply unit 233 into the processing furnace 202.

<Typical effects of the second embodiment>
As described above, according to the technical idea described in the second embodiment, in addition to the effects described in the first embodiment, at least one of the plurality of effects described below is produced.

  (1) According to the second embodiment, by connecting the purge gas supply unit that supplies the purge gas into the gap SP, the gas in the gap SP can be efficiently replaced with the purge gas.

  (2) In particular, by replacing the raw material gas remaining in the gap SP with the purge gas, a product generated by thermal decomposition or gas reaction is formed in the gap SP, and the side wall 230a of the inner tube 230 constituting the gap SP. It is possible to prevent or suppress adhesion to the bottom surface of the gap SP.

  (3) Further, by preventing or suppressing the generation material from adhering to the side wall 230a of the inner tube 230 or the bottom surface of the gap SP, the formed material is destroyed due to stress caused by the temperature cycle. As a result, the inner tube 230 and the like can be prevented from being destroyed.

  (4) In addition, maintenance that cleans or replaces the inner tube 230 or the outer tube 205 by preventing or suppressing the generated material from adhering to the side wall 230a of the inner tube 230 or the bottom surface of the gap SP. The cycle can be extended or maintenance free.

  (5) Further, according to the second embodiment, the purge gas supply unit that supplies the purge gas into the gap SP is connected to control the pressure in the gap SP higher than the pressure in the processing chamber 201. It becomes easy.

  (6) Therefore, it is possible to suppress the gas blown from the gas supply port 2322 of the gas supply nozzle 2321 from flowing into the gap SP. Further, since the gas blown out from the gas supply port 2322 of the gas supply nozzle 2321 can be efficiently reached the wafer 200 in the processing chamber 201, for example, even when processing a plurality of wafers 200 at one time, The uniformity of processing of the wafer 200 can be improved.

  (7) Further, the purge gas supply nozzle 2331 as the purge gas supply unit is formed on the opposite side of the position where the opening FH of the inner tube 230 is formed, thereby efficiently replacing the gas in the gap SP with the purge gas. be able to.

  (8) In addition, a gas having a lighter specific gravity than the source gas is used as the purge gas, and the purge gas supply unit 233 is connected to a position lower than the gas supply port 2322 of the gas supply nozzle 2321 so that the gas in the gap SP can be efficiently used. Thus, it can be replaced with a purge gas.

  (9) Further, by using the substrate processing apparatus 101a described in the second embodiment in the substrate processing step in the substrate manufacturing method, in the substrate manufacturing method, one or more of the plurality of effects described above can be used. There is an effect.

  (10) Further, by using the substrate processing apparatus 101a described in the second embodiment in the substrate processing step in the semiconductor device manufacturing method, one of the above-described effects can be obtained in the semiconductor device manufacturing method. There are the above effects.

  (11) Further, by using the substrate processing apparatus 101a described in the second embodiment in the substrate processing step in the solar cell manufacturing method, one of the plurality of effects described above in the solar cell manufacturing method. There are the above effects.

(Embodiment 3)
In the third embodiment, a description will be given of an embodiment in which a plurality of gas supply nozzles for supplying the processing gas described in the first embodiment are arranged in the gap SP to make the film thickness formed on the substrate uniform. To do.

  FIG. 16 is a cross-sectional view showing a schematic configuration of the processing furnace in the third embodiment which is a modification of the processing furnace shown in FIG. FIG. 17 is a cross-sectional view showing a schematic configuration of a modification of FIG.

  In the first embodiment, the gas supply nozzle 2321 is disposed in the gap SP between the outer tube 205 and the inner tube 230, and the wafer 200 disposed in the processing chamber 201 from the gas supply port 2322 of the gas supply nozzle 2321. The configuration for blowing out the processing gas has been described. Further, it has been described that the blown processing gas passes through the opening FH, which is a circulation port formed in the inner tube 230, and reaches the wafer 200 disposed in the processing chamber 201.

Here, when the side wall 230 a of the inner tube 230 is interposed between the gas supply port 2322 and the wafer 200, the distance between the wafer 200 and the gas supply port 2322 is increased. For example, in the aspect described in the first embodiment, the length is about 50 mm to 60 mm. As described above, when the distance between the wafer 200 and the gas supply port 2322 is increased, depending on the flow rate of the processing gas blown out from the gas supply port 2322, the gas is rapidly decelerated between the gas supply port 2322 and the wafer 200. The amount of processing gas entering between the arranged wafers 200 is reduced. When the film formation process is performed while rotating the wafer 200 in the state where the amount of the processing gas is reduced, as described in the first embodiment, the film thickness of the peripheral portion of the wafer 200 is thicker than that of the peripheral portion. The film thickness of the inner central part is thinner than the peripheral part. That is, a concave film in which the central portion of the wafer 200 is recessed with respect to the peripheral portion is formed on the wafer 200. On the other hand, by adjusting the flow rate of the processing gas supplied to the gas supply port 2322 and the opening area of the gas supply port, the flow rate of the processing gas blown from the gas supply port 2322 can be improved. For example, as described in the first embodiment, 5 slm of H ₂ gas as a carrier gas and SiHCl ₃ (trichlorosilane) gas as a source gas are respectively supplied to the gas supply ports 2322 having an opening diameter of φ1.5 mm. is supplied at a flow rate of 0.25Slm, in terms of Mach number, it is possible to blow out 0.5 approximately, 1000 in terms of _{H 2} gas under the conditions of ° C. 1500 m / sec approximately at a flow rate of the process gas. In this case, the central portion of the wafer 200 can be set to several tens of m / sec. As described in the first embodiment, when the film forming process is performed while rotating the wafer 200, the central portion of the wafer 200 is obtained. The film thickness of the peripheral part outside the center part is thinner than the center part. That is, a convex film in which the peripheral edge of the wafer 200 is recessed with respect to the center is formed on the wafer 200. As described above, when the processing gas is supplied from one gas supply nozzle, a concave or convex film is easily formed. In order to make the film thickness formed on the wafer 200 uniform, the film thickness is extremely high. Flow control is required.

  Therefore, the inventor of the present application has studied a technique for easily equalizing the thickness of the film formed on the wafer 200 and found the configuration of the third embodiment. The difference between the technique described in the first embodiment and the technique of the third embodiment is as described below, and the other points are the same as in the first embodiment. Therefore, in the third embodiment, differences from the second embodiment will be described, and a duplicate description will be omitted. Further, the technique described in the third embodiment can be applied in combination with the technique described in the second embodiment. In this case, one or more effects are achieved among the plurality of effects described in the second embodiment. However, in order to avoid repeated description, an embodiment applied as a modification of the technique described in the first embodiment will be described as an example.

  A difference between the substrate processing apparatus 101b shown in FIG. 16 and the substrate processing apparatus 101 shown in FIG. 11 is that a plurality of gas supply nozzles 2321 are provided in the gap SP. In other words, the substrate processing apparatus 101b according to the third embodiment has a gas supply nozzle 2321c as a first gas supply nozzle and a second gas supply nozzle in the gap SP between the inner tube 230 and the outer tube 205. A gas supply nozzle 2321d is arranged.

  The gas supply nozzle 2321c is the same as the gas supply nozzle 2321 described in the first embodiment, and for example, the center of the wafer 200 in which the gas supply port 2322 having an opening diameter of φ1.5 mm is disposed in the processing chamber 201. It is formed toward. On the other hand, the gas supply nozzle 2321 d has a gas supply port 2322 formed in a region other than the center of the wafer 200 disposed in the processing chamber 201, for example, toward the peripheral edge of the wafer 200. Other configurations of the gas supply nozzle 2321d are the same as those of the gas supply nozzle 2321 described in the first embodiment.

  In addition, on the side wall 230a of the inner tube 230, the gas blown from the gas supply port 2322 is applied to the wafer 200 in the processing chamber 201 in a region facing the gas supply ports 2322 respectively formed in the plurality of gas supply nozzles 2321. Openings FH, which are circulation ports for supplying the liquid, are formed. Specifically, an opening FHa as a first circulation port is formed in a region of the side wall 230a of the inner tube 230 facing the gas supply nozzle 2321c. Further, an opening FHb as a second circulation port is formed in a region of the side wall 230a of the inner tube 230 facing the gas supply nozzle 2321d. The opening FHa is formed toward the center of the wafer 200 disposed in the processing chamber 201. On the other hand, the opening FHb is formed toward a region other than the center of the wafer 200 disposed in the processing chamber 201, for example, toward the peripheral edge of the wafer 200. Other configurations of the openings FHa and FHb are the same as those of the opening FH described in the first embodiment.

Then, the processing gas having the same flow rate is supplied to each of the gas supply nozzles 2321c and 2321d. For example, H ₂ gas as a carrier gas is supplied to each gas supply port 2322 at a flow rate of 5 slm and SiHCl ₃ (trichlorosilane) gas as a source gas is supplied at a flow rate of 0.25 slm. In this state, as described in the first embodiment, when the film formation process is performed while rotating the wafer 200, the processing gas blown from the gas supply port 2322 of the gas supply nozzle 2321c is transferred to the central portion of the wafer 200. A film is formed thick. On the other hand, the processing gas blown from the gas supply port 2322 of the gas supply nozzle 2321d forms a thick film on the peripheral edge of the wafer 200. As a result, the thickness of the entire film formed on the wafer 200 is made substantially uniform. As described above, according to the example of the third embodiment shown in FIG. 16, a plurality of gas supply nozzles 2321 are arranged, and the film thickness of the film formed on the wafer 200 is adjusted by adjusting the direction of the gas supply ports 2322. Can be easily made uniform.

  Note that it is also possible to increase the opening width by integrating the openings FHa and FHb shown in FIG. However, as described in the first embodiment, from the viewpoint of attenuating the radiant heat generated in the susceptor 218, it is preferable to form the openings FHa and FHb independently as shown in FIG.

  Next, a configuration shown in FIG. 17 will be described as a modification of the embodiment shown in FIG. The difference between the substrate processing apparatus 101c shown in FIG. 17 and the substrate processing apparatus 101 shown in FIG. 11 is that a plurality of gas supply nozzles 2321 are provided in the gap SP. In other words, the substrate processing apparatus 101c according to the third embodiment has a gas supply nozzle 2321c as a first gas supply nozzle and a second gas supply nozzle in the gap SP between the inner tube 230 and the outer tube 205. A gas supply nozzle 2321e is arranged.

  The gas supply nozzle 2321c is the same as the gas supply nozzle 2321c shown in FIG. 16, for example, a gas supply port 2322a having an opening diameter of φ1.5 mm is formed toward the center of the wafer 200 arranged in the processing chamber 201. Has been. On the other hand, in the gas supply nozzle 2321e, the gas supply port 2322b is formed toward the center of the wafer 200 disposed in the processing chamber 201, but the opening diameter (opening width) is wider than the gas supply port 2322a. ing. Other configurations of the gas supply nozzle 2321e are the same as those of the gas supply nozzle 2321 described in the first embodiment.

  In addition, on the side wall 230a of the inner tube 230, gas blown from the gas supply port 2322 is applied to the wafer 200 in the processing chamber 201 in a region facing the gas supply ports 2322 formed in the plurality of gas supply nozzles 2321, respectively. Openings FH, which are circulation ports for supplying the liquid, are formed.

Then, each gas supply nozzle 2321c, 2321e is supplied with a processing gas having the same flow rate. For example, H ₂ gas as a carrier gas is supplied to each gas supply port 2322 at a flow rate of 5 slm and SiHCl ₃ (trichlorosilane) gas as a source gas is supplied at a flow rate of 0.25 slm. In this state, as described in the first embodiment, when the film formation process is performed while rotating the wafer 200, the processing gas blown from the gas supply port 2322a of the gas supply nozzle 2321c is in the central portion of the wafer 200. A film is formed thick. On the other hand, the processing gas blown from the gas supply port 2322b of the gas supply nozzle 2321e does not reach the center portion of the wafer 200 due to the wide opening diameter of the gas supply port 2322b, and the film on the peripheral portion of the wafer 200 is formed thick. To do. As a result, the thickness of the entire film formed on the wafer 200 is made substantially uniform. As described above, according to another example of the third embodiment shown in FIG. 17, a plurality of gas supply nozzles 2321 are arranged, and gas supply ports 2322a and 2322b having different opening diameters (opening areas) are respectively formed. Thus, the film thickness of the film formed on the wafer 200 can be easily made uniform.

<Typical effects of the third embodiment>
As described above, according to the technical idea described in the third embodiment, in addition to the effects described in the first embodiment, at least one of the plurality of effects described below is achieved.

  (1) According to the third embodiment, by disposing a plurality of gas supply nozzles 2321 in the gap SP, the film formed on the wafer 200 can be formed even if the distance between the gas supply port 2322 and the wafer 200 is increased. The film thickness can be made uniform easily.

  (2) For this reason, since the distance between the gas supply port 2322 and the wafer 200 can be increased, the radiant heat generated by the susceptor 218 can be attenuated, so that an increase in the temperature of the gas supply port 2322 can be suppressed.

  (3) Even if the processing gas having the same flow rate is supplied to the plurality of gas supply nozzles 2321 by adjusting the direction or opening diameter of the gas supply ports formed in the gas supply nozzles, they are formed on the wafer 200. It is possible to easily make the film thickness uniform.

  (4) Further, by using the substrate processing apparatuses 101b and 101c described in the third embodiment in the substrate processing step in the substrate manufacturing method, one of the above-described effects can be obtained in the substrate manufacturing method. There are the above effects.

  (5) Further, by using the substrate processing apparatuses 101b and 101c described in the third embodiment in the substrate processing step in the semiconductor device manufacturing method, among the above-described effects, Has one or more effects.

  (6) Moreover, by using the substrate processing apparatuses 101b and 101c described in the third embodiment in the substrate processing step in the solar cell manufacturing method, in the solar cell manufacturing method, among the plurality of effects described above, Has one or more effects.

  (7) Further, by applying the substrate processing apparatuses 101b and 101c described in the third embodiment in combination with the technique described in the second embodiment, the plurality of effects described in the second embodiment can be achieved. Among them, one or more effects are further exhibited.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiment. However, the present invention is not limited to the embodiment, and various modifications can be made without departing from the scope of the invention. Needless to say.

  For example, although the epitaxial apparatus has been described as an example in the above embodiment, the technical idea of the present invention is applied to other substrate processing apparatuses such as a CVD apparatus, an ALD apparatus, an oxidation apparatus, a diffusion apparatus, or an annealing apparatus. be able to.

Further, for example, in the second embodiment, the aspect in which the H ₂ gas as the purge gas is supplied from the gas supply pipe 232 that is the gas supply unit has been described, but this can also be applied to the first embodiment. . In this case, in the aspect described in the first embodiment, since the substrate processing step can be performed in the sequence shown in FIG. 15 described in the second embodiment, before the temperature raising step and the film forming step, The pressure in the gap SP can be reliably made higher than the pressure in the processing chamber 201 and maintained.

  In addition, for example, the following modifications can be applied to the embodiments described in the first to third embodiments.

<Modification>
18 is an enlarged cross-sectional view showing a first modification of the substrate holding structure shown in FIG. In the first embodiment, the configuration has been described in which the holding unit HU1 that holds the susceptor 218 protrudes from the column PR and the wafer 200 disposed on the susceptor 218 is held together with the susceptor 218. However, the substrate holding structure is not limited to this. For example, as shown in FIG. 18, the susceptor 218 may be held by forming a groove DIT in each of the columns PR. That is, a plurality of grooves DIT are formed so as to be arranged at equal intervals in the extending direction of the support pillars PR. The grooves DIT are provided at the same height by the plurality of support columns PR, and can be configured such that, for example, three grooves DIT provided at the same height hold both ends of the susceptor 218. In this case, the susceptor 218 held by the three grooves DIT is arranged so as to maintain a horizontal state. Specifically, as shown in FIG. 7, a susceptor 218 is mounted on the boat 217 in each of the grooves DIT arranged at predetermined intervals in the extending direction. Therefore, even when the groove DIT is formed in the support column PR, the boat 217 can be configured such that the plurality of susceptors 218 are stacked and arranged at a predetermined interval in the extending direction of the boat 217.

  As another modified example, the wafer 200 is not held by the susceptor 218 but is directly arranged in a plurality of stages (multiple stages) on a boat (not shown) as a substrate holder so as to be an induction heating body. The induction heating body may be provided in the inner tube 230 in another form without providing the susceptor 218.

  The present invention includes at least the following embodiments.

[Appendix 1]
A processing chamber having an induction heating body, heating the substrate by radiant heat from the induction heating body, and processing the substrate;
An inner tube forming the processing chamber, wherein an inner tube is provided with a circulation port on a peripheral side of the substrate disposed in the processing chamber;
An outer tube provided outside the inner tube and surrounding the inner tube with a gap;
A gas supply nozzle disposed in the gap, which is located on the upstream side of the gas in the first region provided with a blow-out port that blows out gas toward the flow port and the substrate. A gas supply nozzle having a second region;
An induction heating device that is provided outside the outer tube and induction-heats the induction heating body;
A substrate processing apparatus comprising:

[Appendix 2]
The substrate processing apparatus according to appendix 1, further comprising a purge gas supply unit that supplies a purge gas to the gap.

[Appendix 3]
A gas supply unit for supplying gas to the gas supply nozzle;
An exhaust section for exhausting the inner tube;
A control unit for controlling the gas supply unit, the purge gas supply unit, and the exhaust unit;
The substrate processing apparatus according to appendix 2, wherein the control unit controls the gas supply unit, the purge gas supply unit, and the exhaust unit so that the pressure in the gap is higher than the pressure in the inner tube.

[Appendix 4]
The substrate processing apparatus according to claim 2, wherein the purge gas supply unit supplies the purge gas to the gap on a side opposite to the position where the flow port is provided.

[Appendix 5]
In an induction heating device provided outside the outer tube, the induction heating body provided in the processing chamber formed by the inner tube is induction heated to heat the substrate,
A gas supply nozzle provided in a gap between the outer tube and the inner tube, wherein the first region is provided with a blowout port for blowing gas toward the substrate in the inner tube; A gas is blown out from the outlet provided in the first region of the gas supply nozzle having a second region located on the upstream side of the gas from one region;
A method of manufacturing a substrate, wherein the gas reaches the substrate via a flow port provided on a peripheral side of the substrate disposed in the processing chamber of the inner tube, and processes the substrate.

[Appendix 6]
In an induction heating device provided outside the outer tube, the induction heating body provided in the processing chamber formed by the inner tube is induction heated to heat the substrate,
A gas supply nozzle provided in a gap between the outer tube and the inner tube,
The gas supply nozzle having a first region provided with a blow-out port for blowing gas toward the substrate in the inner tube, and a second region located upstream of the gas from the first region. Gas is blown out from the outlet provided in the first region,
A method of manufacturing a semiconductor device, wherein the gas reaches the substrate via a flow port provided on a peripheral side of the substrate disposed in the processing chamber of the inner tube and processes the substrate.

[Appendix 7]
In an induction heating device provided outside the outer tube, the induction heating body provided in the processing chamber formed by the inner tube is induction heated to heat the substrate,
A gas supply nozzle provided in a gap between the outer tube and the inner tube,
The gas supply nozzle having a first region provided with a blow-out port for blowing gas toward the substrate in the inner tube, and a second region located upstream of the gas from the first region. Gas is blown out from the outlet provided in the first region,
A method of manufacturing a solar cell, wherein the gas reaches the substrate through a flow port provided on a peripheral side of the substrate disposed in the processing chamber of the inner tube and processes the substrate.

[Appendix 8]
The substrate processing apparatus according to appendix 1, wherein the outer tube and the inner tube are formed in a cylindrical shape, and the outer tube is formed so that the inside can be maintained under reduced pressure.

[Appendix 9]
The substrate according to claim 1, wherein a side wall of the inner tube facing the second region of the gas supply nozzle is a radiation suppressing unit that suppresses radiation heat from the induction heating body from being radiated to the second region. Processing equipment.

[Appendix 10]
The substrate processing according to appendix 1, wherein the flow port is formed in a slit shape that is long in the extending direction of the gas supply nozzle, and is formed with a width smaller than the nozzle width in the first region of the gas supply nozzle. apparatus.

[Appendix 11]
An outer tube formed in a cylindrical shape capable of maintaining a reduced pressure inside,
An inner tube provided concentrically within the outer tube via a gap with the outer tube;
An induction heating body provided inside the inner tube;
Inside the inner tube, a plurality of stages in the longitudinal direction, a substrate holder for holding the substrate,
An induction heating device that is provided outside the outer tube and induction-heats at least the induction heating body;
A gas supply nozzle that extends from below the gap to a position facing at least the substrate held by the substrate holder and has a blowout port capable of blowing gas toward the substrate;
The inner tube is located at a position facing the outlet of the first gas supply nozzle and on the peripheral side of the plurality of substrates held by the substrate holder, from the outlet to the substrate. The substrate processing apparatus in which the distribution port which distribute | circulates the gas supplied toward is formed.

[Appendix 12]
The substrate processing apparatus according to claim 1, wherein the gas supply nozzle is configured to supply a mixed gas of trichlorosilane (SiHCl ₃ ) gas and hydrogen (H ₂ ) gas as the gas.

[Appendix 13]
The substrate processing apparatus according to appendix 2, wherein the purge gas is hydrogen (H ₂ ) gas.

[Appendix 14]
An induction heating device provided outside the outer tube is used to heat the substrate by induction heating the induction heating body provided in the processing chamber formed by the inner tube to 1150 ° C. or higher,
A gas supply nozzle provided in a gap between the outer tube and the inner tube, wherein the first region is provided with a blowout port for blowing gas toward the substrate in the inner tube; Trichlorosilane (SiHCl ₃ ) gas and hydrogen (H ₂ ) gas are blown out from the outlet provided in the first region of the gas supply nozzle having a second region located on the upstream side of the gas from one region,
The gas reaches the substrate through a circulation port provided on a peripheral side of the substrate disposed in the processing chamber of the inner tube, and radiant heat from the induction heating body is transferred to a side wall of the inner tube. The substrate manufacturing method of processing a substrate by setting the second region of the gas supply nozzle to less than 900 ° C.

[Appendix 15]
A processing chamber having an induction heating body, heating the substrate by radiant heat from the induction heating body, and processing the substrate;
An inner tube forming the processing chamber, wherein an inner tube is provided with a circulation port on a peripheral side of the substrate disposed in the processing chamber;
An outer tube provided outside the inner tube and surrounding the inner tube with a gap;
First and second gas supply nozzles disposed in the gap;
An induction heating device that is provided outside the outer tube and induction-heats the induction heating body;
With
The first and second gas supply nozzles respectively have a first region provided with a blow-out port for blowing gas toward the flow port and the substrate, and upstream of the gas in the first region. A substrate processing apparatus having a second region located.

[Appendix 16]
The first gas supply nozzle is formed with the outlet port toward the center of the substrate disposed in the processing chamber,
The substrate processing apparatus according to supplementary note 15, wherein the second gas supply nozzle has the blowing port formed toward a region other than the center of the substrate disposed in the processing chamber.

[Appendix 17]
Of the outlets,
The first gas supply nozzle is formed with a first outlet having a first opening diameter,
The substrate processing apparatus according to appendix 15, wherein the second gas supply nozzle is formed with a second outlet having a second opening diameter larger than the first opening diameter.

  The present invention can be widely used in manufacturing industries for manufacturing semiconductor devices and solar cells.

101, 101a, 101b, 101c Substrate processing apparatus 103 Front maintenance port 104 Front maintenance door 105 Cassette shelf 106 Slide stage 107 Buffer shelf 110 Cassette 111 Housing 111a Front wall 112 Cassette loading / unloading port 113 Front shutter 114 Cassette stage 115 Boat elevator 118 Cassette transfer device 118a Cassette elevator 118b Cassette transfer mechanism 125 Wafer transfer mechanism 125a Wafer transfer device 125b Wafer transfer device elevator 125c Tweezer 134a Clean unit 140 Pressure-resistant housing 140a Front wall 141 Load lock chamber 142 Wafer loading / unloading port 143 Gate valve 144 Gas supply pipe 147 Furnace port gate valve 161 Furnace port 177, 178, 179, 186 Valve 180 First Gas supply source 181 Second gas supply source 182 Third gas supply source 183, 184, 185, 187 MFC (Mass Flow Controller)
188 Purge gas supply source 200 Wafer 201 Processing chamber 202 Processing furnace 205 Outer tube 205a Side wall 205b Lid 206 Induction heating device 209 Manifold 216 Heat insulation cylinder 217 Boat 217a Bottom plate 217b Top plate 218 Susceptor 218a Peripheral portion 218b Central portion 218c Stepped portion 219 Seal cap 230 Inner tube 230a Side wall 230b Lid 231 Gas exhaust pipe 232 Gas supply pipe 233 Purge gas supply part 235 Gas flow rate control part 235a Purge gas flow rate control part 236 Pressure control part 237 Drive control part 238 Temperature control part 239 Main control part 240 Controller 242 APC Valve 244 Ball screw 245 Lower substrate 246 Vacuum exhaust device 247 Upper substrate 248 Lifting motor 249 Lifting platform 250 Lifting shaft 251 Top plate 252 Lifting substrate 53 Drive unit cover 254 Rotation mechanism 255 Rotating shaft 256 Drive unit storage case 257 Cooling mechanism 258 Power supply cable 259 Cooling flow path 260 Cooling water pipe 263 Radiation thermometer 264 Guide shaft 265 Bellows 301, 309 O-ring 2061 RF coil 2062 Wall body 2063 Cooling wall 2064 Radiator 2065 Blower 2066 Opening 2067 Explosion vent opening / closing device 2311 Gas exhaust 2323, 2321c, 2321d, 2321e Gas supply nozzle 2321a First region 2321b Second region 2322, 2322a, 2322b Gas supply port 2331 Purge gas supply nozzle 2332 Purge gas supply port C, CL, CU, L, U RF coil DIT Groove FH, FHa, FHb Opening HU1 Holding part MT Member PF Purge gas supply part PH Pin hole PN Thrust pin PR Column SP Gap T1 Thickness UDU Thrust pin lift mechanism W1, W2, W3 Opening width

Claims (5)

A processing chamber having an induction heating body, heating the substrate by radiant heat from the induction heating body, and processing the substrate;
An inner tube forming the processing chamber, wherein an inner tube is provided with a circulation port on a peripheral side of the substrate disposed in the processing chamber;
An outer tube provided outside the inner tube and surrounding the inner tube with a gap;
A gas supply nozzle disposed in the gap, which is located on the upstream side of the gas in the first region provided with a blow-out port that blows out gas toward the flow port and the substrate. A gas supply nozzle having a second region;
An induction heating device that is provided outside the outer tube and induction-heats the induction heating body;
A substrate processing apparatus comprising:   The substrate processing apparatus according to claim 1, further comprising a purge gas supply unit that supplies a purge gas to the gap. A gas supply unit for supplying gas to the gas supply nozzle;
An exhaust section for exhausting the inner tube;
A control unit for controlling the gas supply unit, the purge gas supply unit, and the exhaust unit;
The substrate processing apparatus according to claim 2, wherein the control unit controls the gas supply unit, the purge gas supply unit, and the exhaust unit so that a pressure in the gap is higher than a pressure in the inner tube.   The substrate processing apparatus according to claim 2, wherein the purge gas supply unit supplies the purge gas to the gap on the opposite side of the position where the flow port is provided with the inner tube interposed therebetween. In an induction heating device provided outside the outer tube, the induction heating body provided in the processing chamber formed by the inner tube is induction heated to heat the substrate,
A gas supply nozzle provided in a gap between the outer tube and the inner tube, wherein the first region is provided with a blowout port for blowing gas toward the substrate in the inner tube; A gas is blown out from the outlet provided in the first region of the gas supply nozzle having a second region located on the upstream side of the gas from one region;
A method for manufacturing a substrate, wherein the gas reaches the substrate through a flow port provided on a peripheral side of the substrate disposed in the processing chamber of the inner tube and processes the substrate.

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