KR101385659B1 - Batch type apparatus - Google Patents

Abstract

A batch device is disclosed. In the batch apparatus according to the present invention, the gas supply unit and the gas discharge unit are integrally formed in the process tube, the housing is coupled in a form surrounding the outer surface of the process tube, and parts are installed between the housing and the process tube. Therefore, when an error occurs in the parts including the process tube, it is possible to repair the parts by separating the process tube with the housing, thereby simplifying maintenance. In addition, since the process tube itself including the housing can be replaced and used, there is a very convenient effect. In addition, since all components are installed outside the process tube, the gap between the inner surface of the process tube and the outer circumferential surface of the substrate can be minimized. Then, since the space of the chamber can be minimized, not only the amount of reaction gas used can be saved, but also the deposition process time is reduced, thereby improving productivity of the deposition process.

Description

Batch Device {BATCH TYPE APPARATUS}

The present invention relates to a batch type device which is easy to maintain and which can improve the productivity of the deposition process.

In order to manufacture a semiconductor device, a process of depositing a necessary thin film on a substrate such as a silicon wafer is essential. Sputtering, chemical vapor deposition (CVD), atomic layer deposition (ALD) and the like are mainly used in the thin film deposition process.

The sputtering technique is a technique of causing argon ions generated in a plasma state to collide with the surface of a target, and causing a target material, which is detached from the surface of the target, to be deposited as a thin film on the substrate. The sputtering method has an advantage that a high purity thin film having excellent adhesion can be formed, but there is a limit to form a fine pattern having a high aspect ratio.

Chemical vapor deposition is a technique of depositing a thin film on a substrate by injecting various gases into the reaction chamber and chemically reacting gases induced by high energy such as heat, light or plasma with the reaction gas. The chemical vapor deposition method has a problem in that the thermodynamic stability of the atoms is very difficult to control due to the rapid chemical reaction and the physical, chemical and electrical properties of the thin film are deteriorated.

The atomic layer deposition technique is a technique of alternately supplying a source gas and a purge gas, which are reactive gases, and depositing a thin film on an atomic layer basis on a substrate. Since atomic layer deposition utilizes surface reactions to overcome the limitations of step coverage, it is suitable for forming fine patterns having a high aspect ratio and has excellent electrical and physical properties of the thin film.

As an apparatus for performing the atomic layer deposition method, there is a single type apparatus for loading a substrate one by one in a chamber to perform a deposition process, and a batch apparatus for loading a plurality of substrates in a chamber and performing a deposition process in a batch.

Conventional batch apparatus for depositing an atomic layer includes a housing and a process tube installed inside the housing to form a chamber in which a substrate is loaded and a deposition process proceeds. In addition, a gas supply unit for supplying a reaction gas required for the deposition process and a gas discharge unit for discharging the introduced reaction gas to the outside are installed in the process tube.

In the conventional batch apparatus as described above, the process tube, the gas supply unit, and the gas discharge unit are separately installed. For this reason, in order to repair any one part, other parts have to be assembled and disassembled, so there is a disadvantage in that maintenance is inconvenient.

In addition, since the gas supply part and the gas discharge part are installed inside the process tube, the space of the chamber is relatively large. That is, since there is an unnecessary space in the deposition process in the chamber space, a large amount of reaction gas must be supplied. Accordingly, the deposition process takes a long time, and thus the productivity of the deposition process is deteriorated.

Prior art related to batch devices for depositing atomic layers is disclosed in Korean Patent Laid-Open No. 10-2011-0077262.

The present invention has been made to solve the problems of the prior art as described above, the object of the present invention is to form a gas inlet and a gas discharge unit integrally on the outer surface of the process tube, not only easy maintenance but also of the deposition process It is to provide a batch device that can improve the productivity.

The batch device according to the present invention for achieving the above object, the chamber is formed therein, one side of the outer peripheral surface of the gas supply unit for supplying the reaction gas to the chamber is formed integrally, the other side of the outer surface of the reaction introduced into the chamber It includes a process tube integrally formed with a gas discharge unit for discharging the gas to the outside.

In the batch apparatus according to the present invention, the gas supply unit and the gas discharge unit are integrally formed in the process tube, the housing is coupled in a form surrounding the outer surface of the process tube, and parts are installed between the housing and the process tube. Therefore, when an error occurs in the parts including the process tube, since the parts can be repaired by separating the process tube with the housing, there is a simple maintenance effect. In addition, since the process tube itself including the housing can be replaced and used, there is a very convenient effect.

In addition, since all components are installed outside the process tube, the gap between the inner surface of the process tube and the outer circumferential surface of the substrate can be minimized. Then, since the space of the chamber can be minimized, not only the amount of reaction gas used can be saved, but also the deposition process time is reduced. Therefore, there is an effect that the productivity of the deposition process is improved.

1 is a perspective view of a batch device according to an embodiment of the present invention.
FIG. 2 is a partially exploded perspective view of FIG. 1. FIG.
3 is a view showing the internal configuration of the housing shown in FIG.
4 is a perspective view of the process tube shown in FIG.
5 (a) and 5 (b) are enlarged perspective views of the gas supply unit and the gas discharge unit illustrated in FIG. 4.
6 is a plan sectional view of FIG.
7 is a perspective view of a process tube according to another embodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION The following detailed description of the invention refers to the accompanying drawings that show, by way of illustration, specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It should be understood that the various embodiments of the present invention are different, but need not be mutually exclusive. For example, certain features, structures, and characteristics described herein may be implemented in other embodiments without departing from the spirit and scope of the invention in connection with an embodiment. It is also to be understood that the position or arrangement of the individual components within each disclosed embodiment may be varied without departing from the spirit and scope of the invention. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is to be limited only by the appended claims, along with the full scope of equivalents to which such claims are entitled, if properly explained. In the drawings, like reference numerals refer to the same or similar functions throughout the several views, and length and area, thickness, and the like may be exaggerated for convenience.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a batch type apparatus according to embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a perspective view of a batch device according to an embodiment of the present invention, Figure 2 is a partially exploded perspective view of FIG.

As shown, the batch arrangement according to this embodiment for depositing an atomic layer includes a housing 110 and a boat 210 that are detachably coupled to each other.

The housing 110 is formed in a cylindrical shape with an open lower surface, and a process tube 120 (see FIGS. 3 to 6) in which the chamber 122 (see FIG. 6) is formed is installed inside the housing 110. The upper surface side of the housing 110 is supported by an upper surface of a process chamber (not shown) such as a clean room. An internal configuration of the housing 110 and the process tube 120 will be described later.

The boat 210 is installed to be elevated by a known elevator system (not shown), and includes a support 211, a protrusion 213, and a support bar 215.

The supporting part 211 is formed in a substantially cylindrical shape and placed on the bottom of the process chamber, and the upper surface is hermetically coupled to a manifold 180 coupled to the lower end side of the housing 110.

Protruding portion 213 is formed in a substantially cylindrical shape is installed on the upper surface of the support portion 211, is formed with a diameter smaller than the inner diameter of the process tube 120 to be described later is inserted into the process tube 120.

The protrusion 213 may be rotatably installed to allow the substrate 50 to rotate during the atomic layer deposition process to ensure uniformity of the semiconductor manufacturing process.

An auxiliary heater (not shown) may be installed in the protrusion 213 to apply heat from the lower side of the substrate 50 during the deposition process to ensure the reliability of the semiconductor manufacturing process. The substrate 50 loaded on the boat 210 may be preheated before the deposition process by the auxiliary heater.

The support bar 215 is provided in plural, with a mutual interval along the edge portion side of the protrusion 213. A plurality of support grooves 215a are formed on the inner surface of the support bar 215 toward the center of the protrusion 213, respectively. The edge part side of the board | substrate 50 is inserted and supported by the support groove 215a, and by this, the some board | substrate 50 is stacked and stored in the boat 210 in the form of the upper and lower stacked.

An internal configuration of the housing 110 will be described with reference to FIGS. 2 to 5. 3 is a view showing the internal configuration of the housing shown in Figure 2, Figure 4 is a perspective view of the process tube shown in Figure 3, Figure 5 (a) and (b) is a gas supply shown in Figure 4 and An enlarged perspective view of the gas discharge unit, and FIG. 6 is a plan sectional view of FIG.

As shown, the process tube 120 is disposed inside the housing 110 while being concentric with the housing 110 and having an open lower surface on which the chamber 122 is formed. That is, the housing 110 is installed in a form surrounding the outer surface of the process tube 120.

The boat 210 is raised so that the upper surface of the support portion 211 of the boat 210 on the open bottom surface side of the housing 110 and the open bottom surface side of the process tube 120. When combined, the substrate 50 is loaded into the chamber 122 and the chamber 122 is sealed.

On one side of the outer circumferential surface of the process tube 120, a gas supply unit 130 for supplying the reaction gas required for the deposition process to the chamber 122 is integrally formed, and on the other side of the outer circumferential surface, the gas supply unit 130 is formed to face the chamber 122 The gas discharge unit 140 for discharging the reaction gas introduced into the outside to the outside is formed integrally.

The gas supply unit 130 is a first protruding rail 131 integrally formed on one side of the outer circumferential surface of the process tube 120 along the longitudinal direction of the process tube 120, and a first protruding rail inside the first protruding rail 131. A plurality of first flow passages 133 are formed partitioned along the longitudinal direction of the 131, one side includes a plurality of discharge holes 135 in communication with the first flow path 133 and the other side communicate with the chamber 122. . A plurality of discharge holes 135 are formed in each of the first flow paths 133.

The gas discharge part 140 protrudes in the second protruding rail 141 and the second protruding rail 141 which are integrally formed on the other side of the outer circumferential surface of the process tube 120 along the longitudinal direction of the process tube 120. A plurality of second flow passage 143 formed to be mutually divided or communicate with each other along the longitudinal direction of the rail 141, one side is in communication with the chamber 122, the other side of the plurality of discharge holes (communication with the second flow path 143 ( 145). A plurality of discharge holes 145 are formed in each of the second flow paths 143.

When the boat 210 is coupled to the housing 110 and the process tube 120, the discharge hole 135 and the discharge hole 145 uniformly supply the reaction gas to the substrate 50 and easily supply the reaction gas. It is preferable to be located at the interval between the mutually adjacent substrate 50 and the substrate 50 supported by the support bar 215 so as to be sucked out and discharged to the outside.

After manufacturing a thick process tube 120, and then cutting the portion of the process tube 120, except for the gas supply unit 130 and the gas discharge unit 140, the process, the gas supply unit (120) 130 and the gas discharge unit 140 may be integrally formed. In addition, after the process tube 120, the gas supply unit 130 and the gas discharge unit 140 are manufactured separately, and combined by welding, the gas supply unit 130 and the gas discharge unit 140 to the process tube 120. ) May be integrally formed.

The process tube 120, the gas supply unit 130, and the gas discharge unit 140 formed integrally with each other may be used in a high temperature atmosphere of 800 ° C. to 1000 ° C., such as graphite, carbon composite, or silicon carbide ( Silicon carbide).

In addition, if the process tube 120, the gas supply unit 130, and the gas discharge unit 140 formed integrally with each other are used in a low temperature atmosphere of 500 ° C. or less, aluminum may be formed by anodizing. .

In addition, the process tube 120, the gas supply unit 130, and the gas discharge unit 140 formed integrally with each other may be formed of quartz.

A heater 150 for heating the substrate 50 is installed between the housing 110 and the process tube 120. The heater 150 preferably contacts the outer surface of the process tube 120. At this time, the cooling duct 160 is installed on the outer surface of the first protruding rail 131 for guiding the supply of the reaction gas. In addition, between the housing 110 and the process tube 120, when the boat 210 is coupled to the lower surface of the housing 110 and the process tube 120, a vacuum suction tube for maintaining the chamber 122 in a vacuum state (Not shown) may be installed and the heat insulating material 170 may be filled.

A manifold 180 (see FIGS. 1 and 2) is coupled to the bottom surface between the housing 110 and the process tube 120. The gas supply unit 130, the gas discharge unit 140, the cooling duct 160, and the vacuum suction pipe are respectively installed in the manifold 180. In addition, a connector (not shown) for supplying external power to the heater 150 may be installed in the manifold 180.

A sealing member (not shown) may be interposed between the manifold 180 and the support portion 211 of the boat 210 for stable sealing of the chamber 122.

Reference numeral 137 of FIG. 3 to FIG. 5, reference numeral 147 of FIG. 5, and reference numeral 163 of FIG. 3 are the first flow passage 133 of the gas supply unit 130 and the second flow passage of the gas discharge unit 140. 143 and the cooling duct 160, respectively. The connecting pipes 137, 147, and 163 are inserted into and communicate with the communication holes 181, 183, and 185 respectively formed in the manifold 180 illustrated in FIG. 2.

In the batch-type device according to the present embodiment, the gas supply unit 130 and the gas discharge unit 140 are integrally formed in the process tube 120, and the housing 110 is coupled to the outer surface of the process tube 120. The parts are installed between the housing 110 and the process tube 120. Therefore, when an error occurs in the parts including the process tube 120, the parts can be repaired by removing the process tube 120 together with the housing 110, maintenance is easy. In addition, since the process tube 120 itself including the housing 110 may be used by replacing, it is very convenient.

In addition, since all components are installed outside the process tube 120, the gap between the inner surface of the process tube 120 and the outer circumferential surface of the substrate 50 may be minimized. Then, since the space of the chamber 122 can be minimized, not only the amount of reaction gas used can be saved, but also the deposition process time can be reduced, so that the productivity of the deposition process can be improved.

Figure 7 is a perspective view of a process tube according to another embodiment of the present invention, only the difference from FIG. 4 will be described.

As shown, a plurality of gas supply part 330 and gas discharge part 340 are formed along the longitudinal direction of the process tube 320, respectively. In addition, one first flow path (not shown) that is the same as the first flow path 133 illustrated in FIG. 5 is formed in the first protruding rail 331 of each gas supply part 330, and each gas discharge part ( A second flow path (not shown) identical to the second flow path 143 shown in FIG. 5 is formed in the second protruding rail 341 of 340. Further, the same discharge hole (not shown) and discharge hole (not shown) are formed in the first flow path and the second flow path, respectively, as the discharge hole 135 and the discharge hole 145 shown in FIG. 5. In addition, the same cooling duct (not shown) as the cooling duct 160 shown in FIG. 3 is installed on the outer surface of the first protruding rail 331.

That is, the gas supply unit 130 and the gas outlet 140 illustrated in FIG. 5 may include a plurality of first flow paths 133 and a plurality of first protruding rails 131 and one second protruding rail 141. Each of the second flow paths 145 is formed, and the gas supply part 330 and the gas discharge port 340 illustrated in FIG. 7 are provided with a plurality of first protruding rails 331 and a plurality of second protruding rails 341. One first flow path is formed in each of the first protruding rails 331, and one second flow path is formed in each of the second protruding rails 341.

The above-described embodiments of the present invention have been described in detail with reference to the accompanying drawings, in which detailed contour lines are omitted. It should be noted that the above-described embodiments are not intended to limit the technical spirit of the present invention and are merely a reference for understanding the technical scope of the present invention.

110: Housing
120: process tube
130: gas supply unit
140: gas discharge unit

Claims (11)

delete A chamber is formed therein, and one side of the outer circumferential surface is integrally formed with a gas supply unit for supplying the reaction gas to the chamber, and the other side of the outer circumferential surface is formed with a gas tube integrally discharging the reaction gas introduced into the chamber. A batch device comprising:
The gas supply part may include a first protruding rail formed on an outer circumferential surface of the process tube along a longitudinal direction of the process tube, and a plurality of first flow paths partitioned along the longitudinal direction of the first protruding rail inside the first protruding rail. One side is in communication with the first flow path and the other side includes a plurality of discharge holes in communication with the chamber,
The gas discharge part may include a second protruding rail formed on an outer circumferential surface of the process tube along a longitudinal direction of the process tube, and a plurality of second flow paths formed along the longitudinal direction of the second protruding rail inside the second protruding rail. Is in communication with the chamber and the other side includes a plurality of discharge holes in communication with the second flow path. A chamber is formed therein, and one side of the outer circumferential surface is integrally formed with a gas supply unit for supplying the reaction gas to the chamber, and the other side of the outer circumferential surface is formed with a gas tube integrally discharging the reaction gas introduced into the chamber. A batch device comprising:
The gas supply unit may include a plurality of first protruding rails formed on an outer circumferential surface of the process tube along a longitudinal direction of the process tube, and a first formed in the longitudinal direction of the first protruding rails respectively in the plurality of first protruding rails. A flow path, one side of which communicates with the first flow path and the other side of which comprises a plurality of discharge holes in communication with the chamber,
The gas discharge part may include a plurality of second protruding rails formed on an outer circumferential surface of the process tube along a longitudinal direction of the process tube, and a second formed in the longitudinal direction of the second protruding rails in the plurality of second protruding rails, respectively. Flow path, one side is in communication with the chamber and the other side is a batch type device characterized in that it comprises a plurality of discharge holes in communication with the second flow path. The method according to claim 2 or 3,
Arrangement apparatus characterized in that the cooling duct is installed on the outer surface of the first protruding rail. 5. The method of claim 4,
The lower surface of the process tube is opened,
The open housing is coupled to the bottom surface in a form surrounding the outer surface of the process tube,
And a boat in which a plurality of substrates are stacked and spaced apart from each other, and installed in a liftable manner to load the substrates into the chamber. 6. The method of claim 5,
The boat is detachably coupled to the bottom surface of the housing and the bottom surface of the tube while being lifted.
And the substrate is loaded into the chamber when the boat is coupled to the bottom surface of the housing and the bottom surface of the tube. The method according to claim 6,
And a manifold connected to the first flow path, the second flow path, and the cooling duct on a bottom surface of the housing. 8. The method of claim 7,
And the discharge hole and the discharge hole are respectively located at a distance between the substrate and the substrate adjacent to each other supported by the boat when the boat is coupled to the housing. The method according to claim 2 or 3,
The process tube and the gas supply unit and the gas discharge unit formed integrally with each other, characterized in that formed in any one selected from graphite (Graphite), carbon (Carbon) composite or silicon carbide (Silicon carbide). The method according to claim 2 or 3,
The process tube and the gas supply unit and the gas discharge unit formed integrally with each other is formed of aluminum, characterized in that the anodizing (Anodizing) process. The method according to claim 2 or 3,
The process tube and the gas supply unit and the gas discharge unit formed integrally with each other, characterized in that formed of quartz (Quartz).

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