CN102953051A - Chamber device and substrate treating plant with same - Google Patents
Chamber device and substrate treating plant with same Download PDFInfo
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- CN102953051A CN102953051A CN2011102530403A CN201110253040A CN102953051A CN 102953051 A CN102953051 A CN 102953051A CN 2011102530403 A CN2011102530403 A CN 2011102530403A CN 201110253040 A CN201110253040 A CN 201110253040A CN 102953051 A CN102953051 A CN 102953051A
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Abstract
The invention discloses a chamber device which comprises a chamber body, a tray, an external heating source and an auxiliary heating source, wherein a chamber is defined in the chamber body; the tray is arranged in the chamber and used for carrying a substrate; the external heating source is arranged around the periphery of the chamber body; and the auxiliary heating source is arranged on the tray and used for heating the tray. The chamber device disclosed by the embodiment of the invention adopts the external heating source and the auxiliary heating source for common heating, and can compensate uneven temperature distribution on the tray to reduce the radial temperature difference on the tray, thereby ensuring the evenness of the temperature field; and thus, the invention has the advantages of even substrate heating and high treatment efficiency. The invention also discloses a substrate treating plant with the chamber device.
Description
Technical field
The present invention relates to microelectronics technology, the substrate processing equipment that especially relates to a kind of chamber device and have this chamber device.
Background technology
Metal organic chemical compound vapor deposition (MOCVD) is that the organometallics that utilizes that grows up the sixties in 20th century carries out a kind of compound semiconductor vapour phase epitaxy new technology that metal transports, this technology can accurately be controlled thickness and the component of epitaxial film on nanoscale, and be applicable to batch production, now become the main means of production of photoelectric device.
MOCVD equipment mainly is comprised of following subsystem: (1) reaction chamber subsystem; (2) gas transport subsystem; (3) vent gas treatment subsystem, as shown in Figure 2.Wherein the reaction chamber subsystem is the core component of MOCVD equipment, and its design has conclusive impact for epitaxial layer quality and equipment productive rate.Reaction chamber is comprised of outer wall, pallet, heating unit, diffuser and monitoring device on hardware.
Traditional MOCVD equipment is placed with one deck pallet in reaction chamber inside, and treatment substrate efficient is low.In addition, the heating of pallet is inhomogeneous, and namely the radial temperature difference of pallet is large, can not guarantee thus the homogeneity in the temperature field of pallet.
Summary of the invention
The present invention is intended to one of solve the problems of the technologies described above at least.
For this reason, one object of the present invention is to propose a kind of chamber device of dwindling the pallet radial temperature difference.
Another object of the present invention is to propose a kind of substrate processing equipment with above-mentioned chamber device.
Chamber device according to first aspect present invention embodiment comprises: chamber body is limited with chamber in the described chamber body; Pallet, described pallet are located at and are used for carrying substrates in the described chamber; The indirect heating source, described indirect heating source is around the periphery setting of described chamber body; With the boosting source, described boosting source is located at and is used for heating described pallet on the described pallet.
Chamber device according to the embodiment of the invention, by adopting the common heating in indirect heating source and boosting source, can temperature inhomogeneous on the pallet be compensated, dwindle the radial temperature difference on the pallet, guaranteed the homogeneity in temperature field, substrate heating is even thus, and processing efficiency is high, has also satisfied in addition the processing requirement of equipment.
In one embodiment of the invention, described pallet is that multilayer and described multiple layer tray interval arrange, and wherein said boosting source is organized and is located at correspondingly on the described multiple layer tray respectively for.Can further improve processing efficiency thus.
In one embodiment of the invention, described indirect heating source is ruhmkorff coil.
In one embodiment of the invention, described each group of organizing in the boosting source is included as a plurality of resistive heating source more.
Alternatively, the independent control of described a plurality of resistive heating source difference Heating temperature.
Thus, when non-uniform temperature that the footpath that is measured to pallet makes progress, can heat respectively according to the pallet temperature at each place, position, resistive heating source, so that pallet is carried out temperature compensation, thereby reach the homogeneity in temperature field.
In one embodiment of the invention, described every group of boosting source be located at respectively with its corresponding pallet with the carrying described substrate surperficial relative surface on.
In one embodiment of the invention, the power in the boosting source on every layer of pallet is less than the power in described indirect heating source.But the temperature of the substrate above the small-amount ground compensation pallet thus namely is used for compensating the temperature difference.
In one embodiment of the invention, described pallet is heated in described boosting source and described indirect heating source independently of one another.Can carry out homogeneous heating to pallet more accurately thus.
In one embodiment of the invention, described chamber device further comprises fixed support, and described fixed support is located in the described chamber to be used for supporting fixing described boosting source.
According to the chamber device of the embodiment of the invention, be ruhmkorff coil and inner two groups of heating source actings in conjunction in boosting source that are located on every layer of pallet by the indirect heating source, mutually compensate Heating temperature, dwindled the radial temperature difference between the pallet.
According to a kind of substrate processing equipment of second aspect present invention embodiment, comprise according to the chamber device described in the first aspect present invention embodiment.
Wherein, described substrate processing equipment is chemical vapor depsotition equipment.
Substrate processing equipment according to the embodiment of the invention, employing is according to the chamber device of first aspect present invention embodiment, be ruhmkorff coil and inner two groups of heating source actings in conjunction in boosting source that are located on the pallet by the indirect heating source, the compensation Heating temperature has been dwindled the radial temperature difference between the pallet mutually.Additional aspect of the present invention and advantage in the following description part provide, and part will become obviously from the following description, or recognize by practice of the present invention.
Description of drawings
Above-mentioned and/or additional aspect of the present invention and advantage are from obviously and easily understanding becoming the description of embodiment in conjunction with following accompanying drawing, wherein:
Fig. 1 is the schematic diagram according to the chamber device of the embodiment of the invention.
Embodiment
The below describes embodiments of the invention in detail, and the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or the element with identical or similar functions from start to finish.Be exemplary below by the embodiment that is described with reference to the drawings, only be used for explaining the present invention, and can not be interpreted as limitation of the present invention.
In description of the invention, it will be appreciated that, term " on ", orientation or the position relationship of the indications such as D score, 'fornt', 'back', " top ", " end ", " interior ", " outward " be based on orientation shown in the drawings or position relationship, only be for convenience of description the present invention and simplified characterization, rather than indication or the hint device of indication or element must have specific orientation, with specific orientation structure and operation, therefore can not be interpreted as limitation of the present invention.In addition, term " first ", " second " only are used for describing purpose, and can not be interpreted as indication or hint relative importance or the implicit quantity that indicates indicated technical characterictic.Thus, one or more these features can be expressed or impliedly be comprised to the feature that is limited with " first ", " second ".In description of the invention, except as otherwise noted, the implication of " a plurality of " is two or more.
In description of the invention, need to prove, unless clear and definite regulation and restriction are arranged in addition, term " installation ", " linking to each other ", " connection " should be done broad understanding, for example, can be to be fixedly connected with, and also can be to removably connect, or connect integratedly; Can be mechanical connection, also can be to be electrically connected; Can be directly to link to each other, also can indirectly link to each other by intermediary, can be the connection of two element internals.For the ordinary skill in the art, can particular case understand above-mentioned term concrete meaning in the present invention.
In addition, in description of the invention, except as otherwise noted, the implication of " a plurality of " is two or more.
Below with reference to a kind of chamber device of Fig. 1 description according to the embodiment of the invention.
Chamber device according to the embodiment of the invention comprises: chamber body 1, pallet 2, indirect heating source 3 and boosting source 4.As shown in Figure 1, be limited with chamber in the chamber body 1, pallet 2 is used for carrying substrates 5.Indirect heating source 3 centers on chamber body 1 periphery setting so that pallet 2 is heated.Boosting source 4 is located at and is used for heated tray 2 on the pallet 2, with the compensation non-uniform temperature that thermogenetic pallet 2 footpaths make progress owing to indirect heating source 3 adds.
Chemical reaction occurs and film former to chamber interior input process gas with the surface at substrate 5 by central air induction pipeline 6 in the central authorities in chamber body 1, and wherein the position of close every layer of pallet 2 of central air induction pipeline 6 has gas inlet 7.And on the perisporium of chamber body 1, also be formed with pneumatic outlet 8 to discharge the complete process gas of reaction.
Wherein, pallet 2 can adopt magnetic conduction and the heat-resisting materials such as graphite.
Chamber device according to the embodiment of the invention, by adopting the common heating in indirect heating source 3 and boosting source 4, boosting source 4 can compensate because indirect heating source 3 adds the non-uniform temperature that thermogenetic pallet 2 footpaths make progress, can dwindle thus the radial temperature difference on the pallet 2, guaranteed the homogeneity in temperature field, substrate heating is even thus, and processing efficiency is high.
In one embodiment of the invention, pallet 2 is that multilayer and interval arrange, and correspondingly, boosting source 3 is organized and is located at correspondingly on the multiple layer tray 2 respectively for.Can further improve the substrate processing efficiency thus.
As shown in Figure 1, indirect heating source 3 is ruhmkorff coil.In the present embodiment, in ruhmkorff coil 3, pass into medium frequency alternating current (1KHz-20KHz), inducing the alternation eddy current at pallet 2, thereby play the effect of heated tray 2.
In one embodiment of the invention, each group in many group boosting source 4 is included as a plurality of resistive heating source, heat its control by the medium frequency alternating current that passes into from central admission passage 6 in the resistive heating source, and the electrical connection that wherein passes into medium frequency alternating current can connect from the inside of central admission passage 6.Alternatively, the independent control of a plurality of resistive heating source difference Heating temperature.Thus, when non-uniform temperature that the footpath that detects pallet 2 makes progress, can heat respectively according to pallet 2 temperature at each place, position, resistive heating source, so that pallet 2 is carried out temperature compensation, thereby reach the homogeneity in temperature field.
Every group of boosting source 4 be located at respectively with its corresponding pallet 2 and surperficial relative surface carrying substrates 5 on.As shown in Figure 1, substrate 5 is carried on the upper surface of pallet 2, and boosting source 4 is located at the lower surface of pallet 2.
In some embodiments of the invention, the power in the boosting source 4 on every layer of pallet 2 is all less than the power in indirect heating source 3, thus can small-amount the temperature of substrate 5 above the ground compensation pallet 2, namely be used for compensation and be used for the 3 pairs of substrates 5 in indirect heating source and add the thermogenetic temperature difference.
Boosting source 4 and indirect heating source 3 be heated tray 2 independently of one another, and namely boosting source 4 acts on simultaneously with indirect heating source 3, but heating independent of one another can be carried out homogeneous heating to pallet 2 thus more accurately.
In further embodiment of the present invention, chamber device also comprises fixed support (scheming not shown), and this fixed support is located in the chamber of chamber body 1 to be used for supporting fixedly boosting source 4.Alternatively, fixed support can be drawn from the lateral periphery of central admission passage 6, for example, all draws a bracing frame (scheming not shown) to support the boosting source 4 corresponding with this layer pallet 2 below every layer of pallet 2.
In the chamber device of the embodiment of the invention, with ruhmkorff coil 3 as main heating source, to passing into high-power medium frequency alternating current in the ruhmkorff coil 3, promote the bulk temperature of pallet 2, namely be located at respectively many groups resistive heating source on the multiple layer tray 2 by boosting source 4 in addition, pass into the medium frequency alternating current of smaller power, be used for compensating the temperature difference.
Chamber device according to the embodiment of the invention, be ruhmkorff coil and inner 4 two heating source actings in conjunction in boosting source that are located on every layer of pallet 2 by indirect heating source 3, mutually compensate Heating temperature, dwindled the radial temperature difference of pallet 2, satisfied the processing requirement of equipment.
Substrate processing equipment according to the embodiment of the invention can comprise according to the described chamber device of above-described embodiment, and for example to can be chemical vapor depsotition equipment be MOCVD equipment to substrate processing equipment.
Other formations and operation according to the chemical vapor depsotition equipment of the embodiment of the invention all are known for those of ordinary skills, are not described in detail here.
In the description of this specification sheets, the description of reference term " embodiment ", " some embodiment ", " example ", " concrete example " or " some examples " etc. means to be contained at least one embodiment of the present invention or the example in conjunction with specific features, structure, material or the characteristics of this embodiment or example description.In this manual, the schematic statement of above-mentioned term not necessarily referred to identical embodiment or example.And the specific features of description, structure, material or characteristics can be with suitable mode combinations in any one or more embodiment or example.
Although illustrated and described embodiments of the invention, those having ordinary skill in the art will appreciate that: in the situation that do not break away from principle of the present invention and aim can be carried out multiple variation, modification, replacement and modification to these embodiment, scope of the present invention is limited by claim and equivalent thereof.
Claims (11)
1. a chamber device is characterized in that, comprising:
Chamber body is limited with chamber in the described chamber body;
Pallet, described pallet are located at and are used for carrying substrates in the described chamber;
The indirect heating source, described indirect heating source is around the periphery setting of described chamber body; With
Boosting source, described boosting source are located at and are used for heating described pallet on the described pallet.
2. chamber device according to claim 1 is characterized in that, described pallet is that multilayer and described multiple layer tray interval arrange, and wherein said boosting source is organized and is located at correspondingly on the described multiple layer tray respectively for.
3. chamber device according to claim 1 is characterized in that, described indirect heating source is ruhmkorff coil.
4. chamber device according to claim 2 is characterized in that, each group in described many group boosting source comprises a plurality of resistive heating source.
5. chamber device according to claim 4 is characterized in that, Heating temperature is controlled separately respectively in described a plurality of resistive heating source.
6. chamber device according to claim 2 is characterized in that, described every group of boosting source be located at respectively with its corresponding pallet with the carrying described substrate surperficial relative surface on.
7. chamber device according to claim 2 is characterized in that, the power in the boosting source on every layer of pallet is less than the power in described indirect heating source.
8. chamber device according to claim 1 is characterized in that, described pallet is heated in described boosting source and described indirect heating source independently of one another.
9. described chamber device is characterized in that according to claim 1-8, further comprises fixed support, and described fixed support is located in the described chamber to be used for supporting fixing described boosting source.
10. a substrate processing equipment is characterized in that, comprises such as each described chamber device among the claim 1-9.
11. substrate processing equipment according to claim 10 is characterized in that, described substrate processing equipment is chemical vapor depsotition equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102530403A CN102953051A (en) | 2011-08-31 | 2011-08-31 | Chamber device and substrate treating plant with same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102530403A CN102953051A (en) | 2011-08-31 | 2011-08-31 | Chamber device and substrate treating plant with same |
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| CN102953051A true CN102953051A (en) | 2013-03-06 |
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| CN2011102530403A Pending CN102953051A (en) | 2011-08-31 | 2011-08-31 | Chamber device and substrate treating plant with same |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104250849A (en) * | 2013-06-25 | 2014-12-31 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction cavity and epitaxial growth equipment |
| CN104975351A (en) * | 2015-07-09 | 2015-10-14 | 江苏德尔森传感器科技有限公司 | Sensor monocrystalline silicon etching apparatus capable of improving processing precision |
| CN108118287A (en) * | 2016-11-28 | 2018-06-05 | 北京北方华创微电子装备有限公司 | Chamber |
| CN110400763A (en) * | 2018-04-25 | 2019-11-01 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing equipment |
Citations (3)
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| CN1886829A (en) * | 2003-11-27 | 2006-12-27 | 株式会社日立国际电气 | Substrate treatment apparatus, substrate holding device, and semiconductor device manufacturing method |
| CN101906622A (en) * | 2010-08-20 | 2010-12-08 | 华晟光电设备(香港)有限公司 | Device and method for controlling temperature and uniformity of epitaxial wafers in MOCVD system |
| CN101962759A (en) * | 2009-07-21 | 2011-02-02 | 深圳市宇光高科新能源技术有限公司 | PECVD system with internal heater |
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2011
- 2011-08-31 CN CN2011102530403A patent/CN102953051A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1886829A (en) * | 2003-11-27 | 2006-12-27 | 株式会社日立国际电气 | Substrate treatment apparatus, substrate holding device, and semiconductor device manufacturing method |
| CN101962759A (en) * | 2009-07-21 | 2011-02-02 | 深圳市宇光高科新能源技术有限公司 | PECVD system with internal heater |
| CN101906622A (en) * | 2010-08-20 | 2010-12-08 | 华晟光电设备(香港)有限公司 | Device and method for controlling temperature and uniformity of epitaxial wafers in MOCVD system |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104250849A (en) * | 2013-06-25 | 2014-12-31 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction cavity and epitaxial growth equipment |
| CN104250849B (en) * | 2013-06-25 | 2017-03-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction cavity and epitaxial growth equipment |
| CN104975351A (en) * | 2015-07-09 | 2015-10-14 | 江苏德尔森传感器科技有限公司 | Sensor monocrystalline silicon etching apparatus capable of improving processing precision |
| CN104975351B (en) * | 2015-07-09 | 2018-01-02 | 江苏德尔科测控技术有限公司 | The sensor monocrystalline silicon etching device of machining accuracy can be improved |
| CN108118287A (en) * | 2016-11-28 | 2018-06-05 | 北京北方华创微电子装备有限公司 | Chamber |
| CN110400763A (en) * | 2018-04-25 | 2019-11-01 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing equipment |
| CN110400763B (en) * | 2018-04-25 | 2022-04-22 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing equipment |
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Application publication date: 20130306 |