CN104752136A - Plasma processing device and electrostatic chuck thereof - Google Patents
Plasma processing device and electrostatic chuck thereof Download PDFInfo
- Publication number
- CN104752136A CN104752136A CN201310745011.8A CN201310745011A CN104752136A CN 104752136 A CN104752136 A CN 104752136A CN 201310745011 A CN201310745011 A CN 201310745011A CN 104752136 A CN104752136 A CN 104752136A
- Authority
- CN
- China
- Prior art keywords
- heat
- thermal conductivity
- conductivity region
- conducting layer
- electrostatic chuck
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32807—Construction (includes replacing parts of the apparatus)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Abstract
The invention provides a plasma processing device and an electrostatic chuck thereof. The electrostatic chuck comprises an insulating layer and a heat-conducting layer arranged under the insulating layer; a heating device is arranged under the heat-conducting layer; the heat-conducting layer comprises a first heat-conducting region and a second heat-conducting region; the second heat-conducting region is arranged to surround the first heat-conducting region; the heat-conducting layer of the first heat-conducting region is different from the heat-conducting layer of the second heat-conducting region in thickness; due to the different thickness of the heat-conducting layer, the heat transfer speeds are different, so that partial region of the electrostatic chuck can be quickly heated or cooled, and the purpose of uniform temperature and certain temperature difference with other regions can be achieved; according to the scheme of sectionally controlling the temperatures of the electrostatic chuck, another regulation scheme apart from regulating the heating power source of the heating device is realized; the regulation scheme can be cooperatively matched with the heating power source of the heating device to realize temperature control on the electrostatic chuck.
Description
Technical field
The present invention relates to semiconducter process, more particularly, relate to a kind of electrostatic chuck technical field of heating.
Background technology
In the technical process such as plasma etching or chemical vapour deposition (CVD), often adopt electrostatic chuck (Electro Static Chuck is called for short ESC) to fix, support and transmit substrate (Wafer) and wait for workpiece.Electrostatic chuck is arranged in reaction chamber, and it adopts the mode of electrostatic attraction, and non-mechanical means fixes substrate, can reduce the mechanical loss possible to substrate, and electrostatic chuck is contacted completely with substrate, be conducive to heat transfer.
Existing electrostatic chuck generally includes insulating barrier and zone of heating, is provided with DC electrode in insulating barrier, applies electrostatic attraction after the energising of this DC electrode to substrate; For making electrostatic chuck have enough large programming rate, and then improving the uniformity of substrate etching, a zone of heating being set below insulating barrier, in zone of heating, being provided with heater, in order to pass through electrostatic chuck heated substrate; Arrange a pedestal below zone of heating, pedestal is provided with cooling liquid flowing channel, and it injects cooling fluid and cools electrostatic chuck.
In prior art, because the area of electrostatic chuck is larger, while electrostatic chuck is rapidly heated, be difficult to the homogeneity ensureing each regional temperature of electrostatic chuck, the temperature of zones of different has obvious difference and even forms cold-zone and hot-zone, cause the heating of electrostatic chuck to substrate uneven, the technological effect that plasma etches is brought bad impact by this.Prior art heats uneven technical problem to solve electrostatic chuck, by zone of heating zonal control, but in some plasma processing apparatus, only zone of heating zonal control can not be solved electrostatic chuck temperature problem pockety completely.
Summary of the invention
The object of the present invention is to provide a kind of electrostatic chuck, the insulating barrier comprising a built-in DC electrode and the heat-conducting layer be positioned at below insulating barrier, described heat-conducting layer comprises the first thermal conductivity region and the second thermal conductivity region, described second thermal conductivity region is arranged around described first thermal conductivity region, and described first thermal conductivity region is different with the heat-conducting layer thickness at described second thermal conductivity region place.
Preferably, below the first thermal conductivity region of described heat-conducting layer, first heater is set, below the second thermal conductivity region of described heat-conducting layer, secondary heating mechanism is set.
Preferably, described heat-conducting layer material is aluminum or aluminum alloy or aluminium nitride.
Preferably, the heat-conducting layer thickness at described first thermal conductivity region place is greater than the heat-conducting layer thickness at described second thermal conductivity region place.
Preferably, the heat-conducting layer thickness at described first thermal conductivity region place is less than the heat-conducting layer thickness at described second thermal conductivity region place.
Preferably, described heat-conducting layer also comprises the 3rd thermal conductivity region, and described 3rd thermal conductivity region is arranged around described second thermal conductivity region, arranges the 3rd heater below described 3rd thermal conductivity region.
Preferably, the thickness of described 3rd thermal conductivity region place heat-conducting layer is identical or not identical with described first thermal conductivity region and the second thermal conductivity region place heat-conducting layer thickness.
Preferably, described heater comprises the insulating barrier of heater strip and the described heater strip of parcel.
Further, the invention also discloses a kind of plasma processing apparatus, comprise a vacuum reaction chamber, the pedestal of one electrostatic chuck and the described electrostatic chuck of support is set below described vacuum reaction chamber, it is characterized in that: the insulating barrier that described electrostatic chuck comprises a built-in DC electrode and the heat-conducting layer be positioned at below insulating barrier, described heat-conducting layer comprises the first thermal conductivity region and the second thermal conductivity region, described second thermal conductivity region is arranged around described first thermal conductivity region, and described first thermal conductivity region is different with the heat-conducting layer thickness at described second thermal conductivity region place.
Preferably, the supporting layer of metal material or ceramic material formation is set between described heater and described pedestal.
Preferably, described plasma processing apparatus is capacitive coupling plasma processing apparatus or device for processing inductive coupling plasmas.
The invention has the advantages that: the invention provides a kind of plasma processing apparatus and electrostatic chuck thereof, described electrostatic chuck comprises insulating barrier and is arranged on the heat-conducting layer below insulating barrier, below described heat-conducting layer, heater is set, described heat-conducting layer comprises the first thermal conductivity region and the second thermal conductivity region, described second thermal conductivity region is arranged around described first thermal conductivity region, described first thermal conductivity region is different with the heat-conducting layer thickness at described second thermal conductivity region place, because heat-conducting layer thickness is different, the speed of its heat by conduction is different, realize being rapidly heated to electrostatic chuck subregion or lowering the temperature, with reach with other regional temperatures evenly or there is the object of uniform temperature difference, the invention provides a kind of scheme of zonal control electrostatic chuck temperature, achieve the another kind of regulation scheme except regulating the heating power supply of heater, can with the heating power supply coordinated regulating heater, the temperature realizing electrostatic chuck controls.
Accompanying drawing explanation
Fig. 1 illustrates plasma-reaction-chamber structural representation of the present invention;
Fig. 2 illustrates electrostatic chuck of the present invention and below base construction schematic diagram thereof;
Fig. 3 illustrates electrostatic chuck described in another embodiment of the present invention and below base construction schematic diagram thereof.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.
Technical solutions according to the invention are applicable to capacitive coupling plasma reative cell or inductance coupling high type plasma-reaction-chamber, and other use electrostatic chuck to heat the plasma-reaction-chamber of pending substrate temperature.Exemplary, Fig. 1 illustrates plasma-reaction-chamber structural representation of the present invention; Described plasma-reaction-chamber is capacitive coupling plasma reative cell, and the distortion that those skilled in the art are made without performing creative labour by the technical scheme that the present invention discloses all belongs to protection scope of the present invention.
Fig. 1 illustrates a kind of plasma-reaction-chamber structural representation, comprise one and be roughly columniform reaction chamber 100, top electrode 150 corresponding up and down and bottom electrode 110 are set in reaction chamber 100, top electrode 150 connects gas supply device 130, and top electrode 150 evenly enters the gas distribution grid of plasm reaction cavity simultaneously as reacting gas; Bottom electrode 110 connects radio frequency power source 170, and its upper support electrostatic chuck 120, electrostatic chuck 120 is for supporting substrate 140.The operation principle of plasma-reaction-chamber described in the present embodiment is, top electrode 150 and bottom electrode 110 dissociate to the gas of injected plasma reaction chamber 100 under the effect of radio-frequency power, generate plasma 160, plasma 160 pairs of substrates 140 carry out physical bombardment or chemical reaction, realize the processing process to substrate 140.Reacted accessory substance and unexhausted gas discharge plasm reaction cavity 100 by aspiration pump 180.
Fig. 2 illustrates the structural representation of electrostatic chuck of the present invention and below pedestal thereof.As shown in Figure 2, electrostatic chuck 120 is located at above pedestal 110, for carrying substrates 140.Be provided with cooling liquid flowing channel 115 in pedestal 110, it is generally used for injecting cooling fluid and cools electrostatic chuck.The heat-conducting layer 122 that electrostatic chuck 120 comprises insulating barrier 121 and is arranged at below insulating barrier 121, insulating barrier 121 inside buries DC electrode 124 underground, DC electrode connects a DC power supply (not shown), DC power supply acts on DC electrode 124 and produces electrostatic attraction, for fixed substrate 140 on electrostatic chuck 120 surface.Arrange heat-conducting layer 122 below insulating barrier 121, the material of heat-conducting layer 122 can be metal material or ceramic material, as aluminium or aluminium oxide, also can be the materials such as aluminium nitride.In the present embodiment, heat-conducting layer 122 comprises the first thermal conductivity region 1221 and the second thermal conductivity region 1222 around described first thermal conductivity region, below described heat-conducting layer 122, heater 125 is set, a supporting layer 123 is also comprised between described heater 125 and pedestal 110, the material of described supporting layer 123 can be metal material or ceramic material, it can be identical with heat-conducting layer material, also can not be identical.Vacuum reaction chamber 100 carrys out heated substrate 140 by electrostatic chuck 120, facilitates the plasma in substrate and reaction chamber to react, thus realizes the processing and manufacturing to substrate.Corresponding to the first thermal conductivity region 1221 and the second thermal conductivity region 1222, the heater 125 below it comprises at least first heater 1251 and secondary heating mechanism 1252.Along with the development of semi-conductor industry, the size of substrate is increasing, size for the electrostatic chuck 120 supporting fixed substrate 140 is also increasing, and along with the change of electrostatic chuck size is large, whether can the homogeneous temperature of electrostatic chuck have just become control etching technics carry out key factor smoothly.In the present embodiment, described heater is set to first heater 1251 and the secondary heating mechanism 1252 of independent control temperature, secondary heating mechanism 1252 is arranged around described first heater 1251.
As seen from Figure 2, first thermal conductivity region 1221 of heat-conducting layer 122 is not identical with the thickness of the heat-conducting layer at the second thermal conductivity region 1222 place, in the present embodiment, the zone of heating thickness of the first thermal conductivity region 1221 is greater than the zone of heating thickness of the second thermal conductivity region 1222, the distance that corresponding secondary heating mechanism arrives the insulating barrier 121 of electrostatic chuck is in vertical direction less than the distance of first heater 1251 to electrostatic chuck insulating barrier 121, because the thickness of heat-conducting layer 122 is different, the speed that its conduction produces heat by heater 125 is different, and due to the temperature of first heater 1251 and secondary heating mechanism 1252 can regulating and controlling separately, in etching technics, in order to accurately regulate the temperature homogeneity of electrostatic chuck 120, except can being regulated by the temperature arranging first heater 1251 and secondary heating mechanism 1252 respectively, can also be regulated by the different-thickness arranging the first thermal conductivity region 1221 heat-conducting layer and the second thermal conductivity region 1222 heat-conducting layer.By carrying out synergic adjustment to the thickness of the heating power of first heater 1251 and secondary heating mechanism 1252 heat-conducting layer corresponding with above it, effectively have adjusted the temperature homogeneity of electrostatic chuck 120, particularly for the electrostatic chuck that some diameter dimensions are larger, have a significant effect.
For the ease of fixing processing, one deck gluing layer is set between insulating barrier 121 and heat-conducting layer 122, because gluing layer thickness is very little, is shown in accompanying drawing 2 of the present invention.Because heat-conducting layer 122 needs to cohere fixing with insulating barrier 121, keep that the upper surface of heat-conducting layer 122 is smooth can be realized and the cohering of insulating barrier 121 better.When the variable thickness of heat-conducting layer 122 corresponding above the different heating device of electrostatic chuck 120 causes, keep upper surface smooth, upper surface is made to cohere fixing by which better gluing layer and insulating barrier, because heat-conducting layer 122 lower surface is connected with the heater of subregion, heater usually by heat-conducting layer 122 and supporting layer 123 clamping in centre, processing and fabricating can be carried out easily.Heater 125 comprises heater strip and is wrapped in the insulating material outside heater strip, and individual in certain embodiments, heater 125 first can be fitted in heat-conducting layer 122 lower surface, and then is connected and fixed with supporting layer 123.
Except the embodiment shown in Fig. 2, technical solutions according to the invention also comprise other execution modes.Fig. 3 illustrates the electrostatic chuck structural representation of another embodiment of the present invention.In the embodiment shown in fig. 3, heat-conducting layer 222 comprises the first thermal conductivity region 2221, second thermal conductivity region 2222 and the 3rd thermal conductivity region 2223, second thermal conductivity region 2222 is arranged around the first thermal conductivity region 2221,3rd thermal conductivity region 2223 is arranged around the second thermal conductivity region 2222, corresponding, heater 225 below heat-conducting layer comprises first heater 2251, secondary heating mechanism 2252 and the 3rd heater 2253, arrange heat-conducting layer 222 between above-mentioned three heaters to insulating barrier 221, the thickness of the heat-conducting layer above different heating device is different.Three heater temperature can independently control.In the present embodiment, the heat-conducting layer thickness above first heater 2251 is greater than the heat-conducting layer thickness above secondary heating mechanism 2252, and the heat-conducting layer thickness above secondary heating mechanism 2252 is greater than the heat-conducting layer thickness above the 3rd thermal treatment zone.Because the treatment process carried out in plasm reaction cavity is different, in the Temperature Distribution subject plasma reaction chamber on electrostatic chuck, the impact of other parameters is not quite similar, and therefore the arranging of heat-conducting layer 222 thickness of electrostatic chuck can be different from above-described embodiment.In certain embodiments, the thickness of the heat-conducting layer above the heater that can arrange central area is less than the heat-conducting layer thickness of fringe region.Concrete condition is specifically arranged according to the situation in plasm reaction cavity, can not be confined to above-described embodiment, and the miscellaneous part of the present embodiment indicates same above-described embodiment, for being different from above-described embodiment, 1xx is denoted as 2xx, and specific works principle is the same, does not repeat them here.
Heat-conducting layer of the present invention can be aluminium or aluminium alloy, also can be the good conductor material of other heat, or be the materials such as aluminium nitride.Utilize the thickness of heat-conducting layer different, heat transfer rate is different, and the homogeneous temperature realizing electrostatic chuck regulates, for the temperature of electrostatic chuck regulates the new approach added except regulating the heating power supply of heater.Can the temperature of cooperation to electrostatic chuck regulate.In order to the homogeneous temperature realizing electrostatic chuck regulates, one temperature element (not shown) is set near each heater, described some temperature elements connect a temperature control system (not shown), carry out regulable control by temperature control system is unified, realize regulating the uniform object of electrostatic chuck temperature.
According to the plasma processing apparatus that the above embodiment of the present invention provides, while making electrostatic chuck be rapidly heated, effectively ensure the homogeneity of its each regional temperature, thus make each regional temperature of substrate homogeneous, be conducive to the carrying out of plasma-treating technology, improve the passing rate of processing of substrate.
Above-describedly be only the preferred embodiments of the present invention; described embodiment is also not used to limit scope of patent protection of the present invention; therefore the equivalent structure that every utilization specification of the present invention and accompanying drawing content are done changes, and in like manner all should be included in protection scope of the present invention.
Claims (11)
1. an electrostatic chuck, it is characterized in that: the insulating barrier that described electrostatic chuck comprises a built-in DC electrode and the heat-conducting layer be positioned at below insulating barrier, described heat-conducting layer comprises the first thermal conductivity region and the second thermal conductivity region, described second thermal conductivity region is arranged around described first thermal conductivity region, and described first thermal conductivity region is different with the heat-conducting layer thickness at described second thermal conductivity region place.
2. electrostatic chuck according to claim 1, is characterized in that: arrange first heater below the first thermal conductivity region of described heat-conducting layer, arranges secondary heating mechanism below the second thermal conductivity region of described heat-conducting layer.
3. electrostatic chuck according to claim 1, is characterized in that: described heat-conducting layer material is aluminum or aluminum alloy or aluminium nitride.
4. electrostatic chuck according to claim 1, is characterized in that: the heat-conducting layer thickness at described first thermal conductivity region place is greater than the heat-conducting layer thickness at described second thermal conductivity region place.
5. electrostatic chuck according to claim 1, is characterized in that: the heat-conducting layer thickness at described first thermal conductivity region place is less than the heat-conducting layer thickness at described second thermal conductivity region place.
6. electrostatic chuck according to claim 1, is characterized in that: described heat-conducting layer also comprises the 3rd thermal conductivity region, and described 3rd thermal conductivity region is arranged around described second thermal conductivity region, arranges the 3rd heater below described 3rd thermal conductivity region.
7. electrostatic chuck according to claim 1, is characterized in that: the thickness of described 3rd thermal conductivity region place heat-conducting layer is identical or not identical with described first thermal conductivity region and the second thermal conductivity region place heat-conducting layer thickness.
8. electrostatic chuck according to claim 1, is characterized in that: described heater comprises the insulating barrier of heater strip and the described heater strip of parcel.
9. a plasma processing apparatus, it is characterized in that: comprise a reaction chamber, the pedestal of one electrostatic chuck and the described electrostatic chuck of support is set below described reaction chamber, it is characterized in that: the insulating barrier that described electrostatic chuck comprises a built-in DC electrode and the heat-conducting layer be positioned at below insulating barrier, described heat-conducting layer comprises the first thermal conductivity region and the second thermal conductivity region, described second thermal conductivity region is arranged around described first thermal conductivity region, and described first thermal conductivity region is different with the heat-conducting layer thickness at described second thermal conductivity region place.
10. plasma processing apparatus according to claim 9, is characterized in that: the supporting layer arranging metal material or ceramic material formation between described heater and described pedestal.
11. plasma processing apparatus according to claim 9, is characterized in that: described plasma processing apparatus is capacitive coupling plasma processing apparatus or device for processing inductive coupling plasmas.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310745011.8A CN104752136B (en) | 2013-12-30 | 2013-12-30 | A kind of plasma processing apparatus and its electrostatic chuck |
| TW103142797A TW201541536A (en) | 2013-12-30 | 2014-12-09 | Plasma processing apparatus and electrostatic chuck thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310745011.8A CN104752136B (en) | 2013-12-30 | 2013-12-30 | A kind of plasma processing apparatus and its electrostatic chuck |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104752136A true CN104752136A (en) | 2015-07-01 |
| CN104752136B CN104752136B (en) | 2017-06-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310745011.8A Active CN104752136B (en) | 2013-12-30 | 2013-12-30 | A kind of plasma processing apparatus and its electrostatic chuck |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN104752136B (en) |
| TW (1) | TW201541536A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017101738A1 (en) * | 2015-12-17 | 2017-06-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Electrostatic chuck mechanism and semiconductor processing device |
| CN108054087A (en) * | 2017-12-07 | 2018-05-18 | 德淮半导体有限公司 | Annealing device and method for annealing in wafer bonding |
| CN109285923A (en) * | 2018-10-22 | 2019-01-29 | 天马微电子股份有限公司 | Microdevice roller mould and microdevice transfer method |
| CN111383885A (en) * | 2018-12-27 | 2020-07-07 | 中微半导体设备(上海)股份有限公司 | Substrate mounting table capable of improving temperature control precision and plasma processing equipment |
| CN111383882A (en) * | 2018-12-27 | 2020-07-07 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and substrate holder for the same |
| CN113110644A (en) * | 2021-04-26 | 2021-07-13 | 北京北方华创微电子装备有限公司 | Temperature control method and temperature control system for electrostatic chuck |
| CN114496692A (en) * | 2020-11-11 | 2022-05-13 | 中微半导体设备(上海)股份有限公司 | Heating assembly, substrate bearing assembly and plasma processing device thereof |
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| JPH08316298A (en) * | 1995-05-11 | 1996-11-29 | Souzou Kagaku:Kk | Electrostatic chuck |
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| CN101471277A (en) * | 2007-12-27 | 2009-07-01 | 周星工程股份有限公司 | Electrostatic chuck and apparatus for treating substrate including the same |
| CN101728297A (en) * | 2008-10-28 | 2010-06-09 | 周星工程股份有限公司 | Electrostatic chucking apparatus and method for manufacturing the same |
| CN101924017A (en) * | 2009-06-11 | 2010-12-22 | 细美事有限公司 | Substrate heating unit and substrate treating apparatus including the same |
| CN202332816U (en) * | 2011-11-23 | 2012-07-11 | 中微半导体设备(上海)有限公司 | Electrostatic chuck forming subareas by different materials |
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| JPH08316298A (en) * | 1995-05-11 | 1996-11-29 | Souzou Kagaku:Kk | Electrostatic chuck |
| CN101278368A (en) * | 2005-09-30 | 2008-10-01 | 朗姆研究公司 | Electrostatic chuck assembly with dielectric material and/or cavity having varying thickness, profile and/or shape, method of use and apparatus incorporating same |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017101738A1 (en) * | 2015-12-17 | 2017-06-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Electrostatic chuck mechanism and semiconductor processing device |
| US10985045B2 (en) | 2015-12-17 | 2021-04-20 | Beijing Naura Microelectronics Equipment Co., Ltd. | Electrostatic chuck mechanism and semiconductor processing device having the same |
| CN108054087A (en) * | 2017-12-07 | 2018-05-18 | 德淮半导体有限公司 | Annealing device and method for annealing in wafer bonding |
| CN108054087B (en) * | 2017-12-07 | 2020-05-29 | 德淮半导体有限公司 | Annealing device and annealing method in wafer bonding |
| CN109285923A (en) * | 2018-10-22 | 2019-01-29 | 天马微电子股份有限公司 | Microdevice roller mould and microdevice transfer method |
| CN111383885A (en) * | 2018-12-27 | 2020-07-07 | 中微半导体设备(上海)股份有限公司 | Substrate mounting table capable of improving temperature control precision and plasma processing equipment |
| CN111383882A (en) * | 2018-12-27 | 2020-07-07 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and substrate holder for the same |
| CN111383882B (en) * | 2018-12-27 | 2023-03-10 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and substrate holder for the same |
| CN114496692A (en) * | 2020-11-11 | 2022-05-13 | 中微半导体设备(上海)股份有限公司 | Heating assembly, substrate bearing assembly and plasma processing device thereof |
| CN114496692B (en) * | 2020-11-11 | 2024-03-12 | 中微半导体设备(上海)股份有限公司 | Heating assembly, substrate bearing assembly and plasma processing device thereof |
| CN113110644A (en) * | 2021-04-26 | 2021-07-13 | 北京北方华创微电子装备有限公司 | Temperature control method and temperature control system for electrostatic chuck |
| CN113110644B (en) * | 2021-04-26 | 2022-09-16 | 北京北方华创微电子装备有限公司 | Temperature control method and temperature control system for electrostatic chuck |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201541536A (en) | 2015-11-01 |
| CN104752136B (en) | 2017-06-27 |
| TWI575636B (en) | 2017-03-21 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |