CN103074599A - Reaction chamber - Google Patents
Reaction chamber Download PDFInfo
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- CN103074599A CN103074599A CN2012105928313A CN201210592831A CN103074599A CN 103074599 A CN103074599 A CN 103074599A CN 2012105928313 A CN2012105928313 A CN 2012105928313A CN 201210592831 A CN201210592831 A CN 201210592831A CN 103074599 A CN103074599 A CN 103074599A
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- pallet
- insulation construction
- reaction chamber
- spray header
- tray
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Abstract
The invention discloses a reaction chamber which comprises a chamber body, a spray header at the top of the chamber body, and a tray which is arranged at the bottom of the chamber body and opposite to the spray header, wherein a heater is arranged under the tray; and the reaction chamber further comprises heat-insulating structures encircled around the tray. According to the invention, the heat-insulating structures are arranged at the edge of the tray to reduce the heat loss of the edge of the tray, so as to allow uniform temperature at the edge and the middle part of the tray, which is conducive to heating substrates on the tray; and during the process of chemical vapor deposition, better deposition effect can be obtained, the problem of different deposition rate caused by temperature difference at different areas is avoided, so that the deposition is uniform and films with high quality can be obtained.
Description
Technical field
The present invention relates to semiconductor devices, particularly relate to a kind of reaction chamber of chemical vapor deposition processes.
Background technology
Existing chemical vapor deposition method normally is positioned over substrate on the reaction chamber, and described reaction chamber top arranges diffuser, and for example the source gas that provides deposition reaction to use to substrate is provided spray header.Concrete, please refer to Fig. 1, it is the synoptic diagram of reaction chamber of the prior art.Described reaction chamber comprises cavity 1, is arranged on the spray header 2 at described cavity 1 top and the pallet 3 that is arranged on described cavity 1 bottom and is oppositely arranged with described spray header 2.Described pallet 3 is used for carrier substrate 5a, 5b, 5c.Described reaction chamber also comprises the well heater 4 that is positioned at described pallet 3 belows, is used for pallet 3 is heated so that substrate reaches the needed temperature of deposition reaction.Remaining gas is sent to tail gas unit along pallet 3 surfaces to pallet 3 edge flowings via associated conduit after unreacted source gas and the reaction.
Along with the increase of substrate dimension and increasing of substrate number, the size of pallet 3 increases, and the problem of the non-uniform temperature of the edge of the middle part of pallet 3 and pallet 3 just highlights day by day.This is because the peripherad heat radiation in edge section of pallet 3 is more serious than the heat radiation of the middle portion of pallet 3, thereby can cause the temperature of edge section of pallet 3 on the low side; In addition, remaining gas flows from pallet 3 edges to pallet 3 belows (as shown by the arrows in Figure 1) after a large amount of unreacted gas and the reaction, can take away a large amount of heats, also can cause the temperature of edge section of pallet 3 more on the low side than pallet 3 middle portions.The non-uniform temperature of the edge of the middle part of pallet 3 and pallet 3 will affect chemical vapor deposition processes greatly, cause the different zones deposition effect of the substrate of different zones or same substrate inconsistent, and even do not meet design requirements, such as, the temperature of substrate 5b in the middle of being positioned at will be higher than the substrate 5a that is positioned at the edge, the temperature of 5c, this is just so that the parameter of the rete that forms at substrate is different, might be not up to standard or be unfavorable for subsequent operations.
Therefore, be necessary existing installation is improved, can keep the homogeneity of pallet temperature, avoid chemical vapor deposition method is caused detrimentally affect.
Summary of the invention
The object of the present invention is to provide a kind of reaction chamber, to solve the inconsistent problem of pallet temperature in the prior art.
For solving the problems of the technologies described above, the invention provides a kind of reaction chamber, comprise cavity, be arranged on the spray header at described cavity top and the pallet that is arranged on described cavity bottom and is oppositely arranged with described spray header, described pallet can rotate by relatively described spray header, and described pallet below has well heater; Described reaction chamber also comprises insulation construction, and described insulation construction is looped around around the described pallet.
Reaction chamber provided by the invention, be provided with insulation construction at tray edge, this can reduce the heat loss of tray edge part, so that the temperature of tray edge part and middle portion is consistent substantially, is conducive to uniformly heating and is positioned at substrate on the pallet, in chemical vapor deposition processes, can obtain better deposition effect, avoided different zones owing to the different different problems of deposition that cause of temperature, thereby so that deposition evenly, obtain high-quality rete.
Description of drawings
Fig. 1 is the structural representation of the reaction chamber of prior art;
Fig. 2 is the structural representation of the reaction chamber of first embodiment of the invention;
Fig. 3 is the vertical view of locating from A-A ' of the reaction chamber among Fig. 2;
Fig. 4 is the structural representation of the reaction chamber of second embodiment of the invention;
Fig. 5 is the structural representation of the reaction chamber of third embodiment of the invention.
Embodiment
By the content of putting down in writing in the background technology as can be known, there is the inconsistent problem of temperature distribution of pallet in the reaction chamber of prior art.Core concept of the present invention is, by introducing insulation construction, so that heat radiation and the thermal convection of tray edge part suffer restraints, thereby avoided the heat of edge section to run off.
Please refer to Fig. 2, the invention provides a kind of reaction chamber, comprise cavity 101, be arranged on the spray header 102 at described cavity 101 tops and the pallet 103 that is arranged on described cavity 101 bottoms and is oppositely arranged with described spray header 102, described pallet 103 is used for carrying at least one substrate 106a, 106b, 106c, carry out reactive deposition to receive from the source gas that spray header 102 provides, described pallet 103 can rotate by relatively described spray header 101, described pallet 103 belows have well heater 104, have the gap between described pallet 103 and the well heater 104.Described reaction chamber also comprises insulation construction 105, and described insulation construction 105 is looped around around the described pallet 103, and described insulation construction 105 is preferably and keeps fixing, namely is not rotated with pallet 103.
Please refer to Fig. 2 and Fig. 3, in the present embodiment, the cavity 101 of employing is hollow cylinder, and described pallet 103 and described well heater 104 are all disc, and described insulation construction 105 is preferably the ring type structure around described pallet 103.In other feasible embodiments, also can be other shapes, such as rectangle etc.
For the temperature of assurance pallet 103 that can be better consistent, the heat-conduction coefficient of the material of described insulation construction 105 can be the heat-conduction coefficient less than the material of described pallet 103, thereby reduces the heat exchange between the lower cavity 101 of described pallet 103 edges and temperature.In addition, can also so that described insulation construction 105 towards the reflectivity on the surface of pallet 103 1 sides greater than the reflectivity of described pallet 103 towards the surface of described insulation construction 105 1 sides, so that the energy reflection of described tray edge radiation is got back to the edge of described pallet, reduce the loss of heat.The heat-conduction coefficient of the material of preferred described insulation construction 105 can be the heat-conduction coefficient less than the material of described pallet 103, and described insulation construction 105 towards the reflectivity on the surface of pallet 103 1 sides greater than the reflectivity of described pallet 103 towards the surface of described insulation construction 105 1 sides, in order to better to prevent the heat loss of pallet 103 edge sections.
In the present embodiment, the material of described insulation construction 105 is preferably quartz, also can adopt pottery; For reach described insulation construction 105 towards the reflectivity on the surface of pallet 103 1 sides greater than the reflectivity of described pallet 103 towards the surface of described insulation construction 105 1 sides, perhaps further optimize the reflectivity of described insulation construction 105, a kind of feasible method is that described insulation construction 105 is made as minute surface towards the surface of pallet 103 1 sides, this can obtain higher reflectivity, and this compares the convenient and saving of the change that relies on material fully.
In the present embodiment, described insulation construction 105 at least part of peripheries around described well heater 104, preferably, the height of described insulation construction 105 is greater than the thickness of described pallet 103, thereby so that described pallet 103 all be arranged in 105 of described insulation constructions around the zone, and well heater also at least part of be arranged in 105 on described temperature structure around the zone, this can be so that described well heater 104 can the described insulation construction 105 of direct heating, improve the temperature of described insulation construction 105, thereby play better heat insulation effect.Consist of exhaust-duct 107 between described insulation construction 105 and the described pallet 103, be convenient to the circulation of gas, and reduced to a certain extent gas flow space, also can reduce the heat of taking away owing to gas flow.
Described insulation construction 105 preferably and between cavity 101 sidewalls has the gap, this is because the temperature of cavity 101 sidewalls is compared low, insulation construction 105 does not directly contact with described cavity 101 sidewalls and can reduce insulation construction 105 heat leakages so, avoid the heat in the chamber is passed, keep the temperature of described insulation construction 105.
Please refer to Fig. 4, it is the structural representation of second embodiment of the invention, the difference of present embodiment and the first embodiment is, described exhaust-duct 107 is formed between described insulation construction 105 and described cavity 101 sidewalls, so that the gas between described spray header 102 and the described pallet 103 is discharged.Preferably, the surface of described insulation construction 105 towards the surface of described spray header 102 and described pallet 103 towards described spray header 102 is positioned at same plane, preferably can be further so that the height of described insulation construction 105 equals the thickness of described pallet 103, this can be so that the airflow field around described pallet 103 edge sections be more steady, can either guarantee that temperature is relatively stable, also can avoid the situation of speed of reaction poor controllability to occur.Gap width between described insulation construction 105 and the described pallet 103 is 0.5 ~ 2mm, rotation for the ease of pallet 103, prevent that described insulation construction 105 coarse surface and described pallets 103 from touching, being preferably described gap is 1 ~ 2mm, this is the distance of less, therefore the airflow field around described pallet 103 edge sections still can held stationary, and reacted gas passes through the exhaust-duct 107 between described insulation construction 105 and described cavity 101 sidewalls.In the present embodiment, because described insulation construction 105 is near described pallet 103, therefore obtained stably airflow field, thereby reduced greatly because the heat that gas flow is taken away, simultaneously for so that described insulation construction 105 has identical with described pallet 103 or near the temperature of (normally being slightly larger than), be preferably so that the diameter of described well heater 104 greater than the diameter of described pallet 103, thereby so that described well heater 104 can be at least the part of described insulation construction 105 is heated, improve the temperature of described insulation construction 105, thereby play better heat insulation effect.
Please refer to Fig. 5, it is the structural representation of third embodiment of the invention, the difference of present embodiment and the second embodiment is, between described insulation construction 105 and described cavity 101 sidewalls, and all consists of exhaust-duct 107 between described insulation construction 105 and the described pallet 103.Present embodiment is provided with two exhaust-ducts 107, so that pass through from the exhaust-duct 107 between described insulation construction 105 and described cavity 101 sidewalls near the relatively low gas of cavity 101 side-walls temperature, the gas of pallet 103 tops is then from exhaust-duct 107 processes between described insulation construction 105 and the described pallet 103, can effectively reduce the convection current near the gas of middle portion in the gas of cavity 101 side-walls and the chamber, avoid too much heat exchange.Owing to consist of exhaust-duct 107 between described insulation construction 105 and the described pallet 103, so the diameter of described well heater 104 is less than or equal to the diameter of described pallet 103, so that gas communication.
In the reaction chamber that above-mentioned embodiment provides, be provided with insulation construction 105 at pallet 103 edges, this can reduce the heat loss of pallet 103 edge sections, so that the temperature of pallet 103 edge sections and middle portion is consistent substantially, can obtain needed temperature so that be positioned at substrate 106a and the 106c of pallet 103 marginal positions, identical or basic identical with the temperature of the substrate 106b that is positioned at pallet 103 mid-ways, namely can heat uniformly the substrate that is positioned on the described pallet 103, so in chemical vapor deposition processes, can obtain better deposition effect, avoided different zones owing to temperature cause different such as deposition, deposition quality is poor or form the problem such as impurity, thereby so that deposition evenly obtains high-quality rete.
Obviously, those skilled in the art can carry out various changes and modification to invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these revise and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these change and modification.
Claims (10)
1. a reaction chamber comprises cavity, is arranged on the spray header at described cavity top and the pallet that is arranged on described cavity bottom and is oppositely arranged with described spray header, and described pallet below has well heater; It is characterized in that described reaction chamber also comprises insulation construction, described insulation construction is looped around around the described pallet.
2. reaction chamber as claimed in claim 1 is characterized in that, described insulation construction is the ring type structure around described pallet.
3. reaction chamber as claimed in claim 2 is characterized in that, the heat-conduction coefficient of the material of described insulation construction is less than the heat-conduction coefficient of the material of described pallet.
4. reaction chamber as claimed in claim 2 is characterized in that, described insulation construction towards the reflectivity on the surface of pallet one side greater than the reflectivity of described pallet towards the surface of described insulation construction one side.
5. reaction chamber as claimed in claim 2 is characterized in that, the material of described insulation construction is quartzy or ceramic.
6. reaction chamber as claimed in claim 2 is characterized in that, at least part of periphery around described well heater of described insulation construction.
7. reaction chamber as claimed in claim 6 is characterized in that, the height of described insulation construction is greater than the thickness of described pallet.
8. reaction chamber as claimed in claim 2 is characterized in that, the gas between described spray header and the described pallet is discharged by the exhaust-duct that forms between described insulation construction and the described cavity wall.
9. reaction chamber as claimed in claim 8 is characterized in that, the surface of described insulation construction towards the surface of described spray header and described pallet towards described spray header is positioned at same plane.
10. reaction chamber as claimed in claim 9 is characterized in that, described pallet can rotate by relatively described spray header, and the gap between described insulation construction and the described pallet is 0.5 ~ 2mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012105928313A CN103074599A (en) | 2012-12-29 | 2012-12-29 | Reaction chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012105928313A CN103074599A (en) | 2012-12-29 | 2012-12-29 | Reaction chamber |
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| Publication Number | Publication Date |
|---|---|
| CN103074599A true CN103074599A (en) | 2013-05-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012105928313A Pending CN103074599A (en) | 2012-12-29 | 2012-12-29 | Reaction chamber |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109750279A (en) * | 2017-11-07 | 2019-05-14 | 中微半导体设备(上海)股份有限公司 | A kind of substrate tray and reactor for thermal chemical vapor deposition |
| CN116024555A (en) * | 2023-03-27 | 2023-04-28 | 长鑫存储技术有限公司 | Substrate processing apparatus and method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101465284A (en) * | 2007-12-21 | 2009-06-24 | 东京毅力科创株式会社 | Substrate processing appratus |
| CN102121098A (en) * | 2010-01-08 | 2011-07-13 | 复旦大学 | Reaction chamber with external heating mode for metal organic chemical vapor deposition system |
| CN102668033A (en) * | 2010-03-15 | 2012-09-12 | 住友电气工业株式会社 | Semiconductor thin-film manufacturing method, seminconductor thin-film manufacturing apparatus, susceptor, and susceptor holding tool |
| CN102732853A (en) * | 2011-04-08 | 2012-10-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Chamber device and substrate-processing device therewith |
-
2012
- 2012-12-29 CN CN2012105928313A patent/CN103074599A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101465284A (en) * | 2007-12-21 | 2009-06-24 | 东京毅力科创株式会社 | Substrate processing appratus |
| CN102121098A (en) * | 2010-01-08 | 2011-07-13 | 复旦大学 | Reaction chamber with external heating mode for metal organic chemical vapor deposition system |
| CN102668033A (en) * | 2010-03-15 | 2012-09-12 | 住友电气工业株式会社 | Semiconductor thin-film manufacturing method, seminconductor thin-film manufacturing apparatus, susceptor, and susceptor holding tool |
| CN102732853A (en) * | 2011-04-08 | 2012-10-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Chamber device and substrate-processing device therewith |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109750279A (en) * | 2017-11-07 | 2019-05-14 | 中微半导体设备(上海)股份有限公司 | A kind of substrate tray and reactor for thermal chemical vapor deposition |
| CN116024555A (en) * | 2023-03-27 | 2023-04-28 | 长鑫存储技术有限公司 | Substrate processing apparatus and method |
| CN116024555B (en) * | 2023-03-27 | 2023-07-11 | 长鑫存储技术有限公司 | Substrate processing apparatus and method |
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Application publication date: 20130501 |