CN102586759B - Gas delivery system and semiconductor processing equipment applying same - Google Patents
Gas delivery system and semiconductor processing equipment applying same Download PDFInfo
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- CN102586759B CN102586759B CN201110004923.0A CN201110004923A CN102586759B CN 102586759 B CN102586759 B CN 102586759B CN 201110004923 A CN201110004923 A CN 201110004923A CN 102586759 B CN102586759 B CN 102586759B
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Abstract
The invention belongs to the technical field of semiconductor processing and particularly provides a gas delivery system which is used for delivering process gas to a process chamber of semiconductor processing equipment. The gas delivery system comprises a gas inlet and a plurality of gas outlets, wherein the gas inlet is used for introducing the process gas outside the process chamber into the gas delivery system; and the plurality of gas outlets are sequentially arranged along the length direction of the gas delivery system and are used for outputting the process gas in the gas delivery system into the process chamber and ensuring the process gas to reach each substrate born by trays. Moreover, the invention also provides the semiconductor processing equipment applying the gas delivery system. According to the gas delivery system and the semiconductor processing equipment applying the same, which are provided by the invention, the process gas can be rapidly and uniformly delivered to the substrate borne by each tray, so that the processing speed and the uniformity of the processed substrates are improved, and the production efficiency and the product yield are improved.
Description
Technical field
The invention belongs to semiconductor processing techniques field, be specifically related to a kind of gas delivery system and apply the semiconductor processing equipment of this gas delivery system.
Background technology
Along with the development of technology, chemical vapor-phase growing (Chemical Vapor Deposition, referred to as CVD) technology is more and more applied.Particularly Organometallic Chemistry vapor phase growth (Metal Organic Chemical Vapor Deposition wherein, referred to as MOCVD) technology, because having film coating composition, it easily controls, plated film even compact and sticking power is good etc. that advantage becomes the main coating technique of industry member gradually.So-called MOCVD technology refers to, utilize organometallics (Metal Organic, referred to as MO) as a kind of chemical vapor-phase growing technology of source material, its principle makes film growth for making organo-metallic unstripped gas, hydrogenated gas or halogenation gas carry out pyrolysis in gas phase.In actual process, the equipment that carries out above-mentioned CVD reaction is called to CVD equipment; The equipment that uses MO gas to carry out CVD reaction is called to MOCVD equipment.
At present, in order to increase the production capacity of MOCVD equipment, those skilled in the art have developed a kind of MOCVD equipment that can the multiple substrates of single treatment.Particularly, in the processing chamber of this MOCVD equipment, along laterally (being general horizontal direction) is stacked multiple pallets that carry processed substrate are set, in single process, process multiple substrates by means of described multiple pallets simultaneously, thereby increase the production capacity of MOCVD equipment.For example, Fig. 1 just illustrates so a kind of MOCVD equipment.
Refer to Fig. 1, the diagrammatic cross-section of its basic structure that is a kind of existing crystallized film growth device.As shown in Figure 1, this crystallized film growth device comprises: processing chamber 101, horizontal stacked multiple pallets 102 that carry processed substrate that arrange on this interior edge of processing chamber 101, and the position on the lower at these processing chamber 101 right side walls is provided with process gas inlet mouth 103, process gas enters in processing chamber 101 from chamber outside via this process gas inlet mouth 103, and is progressively diffused on the processed substrate that each pallet 102 carries.Meanwhile, be provided with air outlet 104 at the upper position place of processing chamber 101 right side walls, after reaction, gas is discharged processing chamber 101 via this air outlet 104.
Although crystallized film growth device shown in Fig. 1 can be realized higher production capacity, but in actual applications, inevitably there is following problems in it:
One, in above-mentioned crystallized film growth device, due to the gas delivery system that can be used to delivery technology gas in processing chamber not being set, but only by the process gas inlet mouth of offering on processing chamber sidewall, process gas is incorporated in processing chamber, and make the process gas that enters processing chamber at whole chamber internal diffusion, on the substrate that makes process gas progressively arrive each pallet by means of this diffusion to be carried, so just, make process gas arrive time of processed substrate longer, thereby affect the speed of growth of crystalline film, and cause production efficiency to reduce.
They are two years old, in above-mentioned crystallized film growth device, due to each pallet apart from the distance of inlet mouth not etc., thereby make process gas not be diffused into the required time of each pallet not etc., and the process gas scale of construction spreading and come is also different, particularly, the substrate carrying near the pallet of inlet mouth can obtain quickly process gas and the gas volume that obtains also more; And the substrate carrying away from the pallet of inlet mouth, its speed that obtains process gas is relatively slow, and the gas volume obtaining is also relatively less.So just, make the substrate on different pallets all there are differences at aspects such as the crystalline film speed of growth and crystalline film thickness, thereby reduced the homogeneity of crystalline film in single process, and then affected product yield.
For this reason, how in the semiconductor processes of such as crystalline film growth etc., to make process gas fast and to arrive equably each substrate just to become current problem demanding prompt solution.
Summary of the invention
For solving the problems of the technologies described above, the invention provides a kind of gas delivery system, it can make process gas arrive fast and equably the substrate that each pallet carries, thereby has improved processing speed and the homogeneity of processed substrate, and then enhances productivity and product yield.
In addition, the present invention also provides a kind of semiconductor processing equipment, in it, be provided with above-mentioned gas delivery system provided by the invention, thereby it can make process gas arrive fast and equably the substrate that each pallet carries equally, thereby improve processing speed and the homogeneity of processed substrate, and then enhanced productivity and product yield.
For solving the problems of the technologies described above, the invention provides a kind of gas delivery system, for the processing chamber delivery technology gas to semiconductor processing equipment, in described processing chamber, be provided with pallet apparatus, described pallet apparatus comprises the multiple pallets for carrying substrates along horizontal stacked setting.Wherein, described gas delivery system comprises: inlet mouth, and it is for being incorporated into described gas delivery system by the process gas outside processing chamber; And along the length direction of described gas delivery system and be disposed with and each described pallet air outlet one to one, it is for making process gas heart conveying wherein from described multiple pallets periphery of gas delivery system, or its peripheral conveying of mind-set in described multiple pallets, to improve the homogeneity that arrives each on-chip process gas that described multiple pallet was carried.
Preferably, described air outlet arranges corresponding to each pallet, so that process gas directly exports each pallet to.
Preferably, described gas delivery system also comprises the water cooling tube in order to cool process gas.
Preferably, described gas delivery system also comprises the gas compensation passage in order to auxiliary delivery technology gas.
Wherein, described gas delivery system comprises tubular gas delivery channels, and it can be by described pallet apparatus around in the inner and to the substrate delivery technology gas being placed on described pallet; Or described gas delivery system comprises multiple gas delivery channels, described pallet apparatus periphery all can be extended and be arranged on to each gas delivery channels along the length direction of this gas delivery system; Or, described gas delivery system comprises the tubular gas transfer passage that at least one extends along the length direction of described gas delivery system, and described at least one tubular gas transfer passage can run through described pallet apparatus along the stacked direction of described multiple pallets.
As another technical scheme, the present invention also provides a kind of semiconductor processing equipment, it comprises processing chamber, gas delivery system and exhaust system, in described processing chamber, be provided with the pallet apparatus for carrying substrates, described pallet apparatus comprises the multiple pallets along horizontal stacked setting, and between adjacent trays, tool is at regular intervals, wherein, described gas delivery system can adopt above-mentioned gas delivery system provided by the invention, and this gas delivery system stacked direction along described multiple pallets in processing chamber extends.
Wherein, described pallet structure in the form of a ring, described gas delivery system runs through the hollow space of the pallet of described stacked setting along the stacked direction of described multiple pallets, and described exhaust system is arranged on the periphery of described multiple pallets, and after reaction, gas is discharged processing chamber via this exhaust system.
Wherein, described gas delivery system arranges around described pallet apparatus, and by process gas export to by around each substrate that pallet apparatus carried, and described pallet structure in the form of a ring, described exhaust system runs through the hollow space of the pallet of described stacked setting along the stacked direction of described multiple pallets, after reaction, gas is discharged processing chamber via this exhaust system.
Wherein, described gas delivery system comprises tubular gas delivery channels, and it arranges around described pallet apparatus; Or described gas delivery system comprises multiple gas delivery channels, each gas delivery channels is all arranged on the peripheral of described pallet apparatus and extends along the length direction of this gas delivery system.
Wherein, described semiconductor processing equipment also comprises induction heater, and it is arranged on processing chamber outside, for the mode with induction heating, the inside of processing chamber is heated.
Wherein, described semiconductor processing equipment also comprises rotating mechanism, in order to drive described pallet apparatus with respect to described gas delivery system and/or induction heater rotation.
Wherein, described rotating mechanism connects described pallet apparatus and drives this pallet apparatus to be rotated around its turning axle, so that temperature and/or the air-flow at each pallet different positions place are even; And/or described rotating mechanism connects described gas delivery system and drive this gas delivery system to be rotated around its turning axle, so that temperature and/or the air-flow at each pallet different positions place are even; And/or described rotating mechanism connects described induction heater and drive this induction heater to be rotated around its turning axle, so that temperature and/or the air-flow at each pallet different positions place are even.
Wherein, described exhaust system also comprises extraction sector, in order to described processing chamber is carried out to negative pressure exhaust.
Wherein, described semiconductor processing equipment also comprises sweeping gas entrance, in order to processing chamber is cleaned by sweeping gas.
Wherein, described semiconductor processing equipment is crystallized film growth device.
The present invention has following beneficial effect:
One, gas delivery system provided by the invention is delivery technology gas rapidly.Particularly, because gas delivery system provided by the invention comprises multiple air outlets that process gas is introduced to the inlet mouth in it and set gradually along the length direction of this gas delivery system, like this, in the processing chamber that this gas delivery system is set to semiconductor processing equipment time, this gas delivery system can extend along the stacked direction of multiple pallets, and its development length can cover described multiple pallet, like this, first process gas enters into gas delivery system via inlet mouth, and diffusion rapidly therein under the constraint of this gas delivery system, and then diffuse to each air outlet, and arrive with it corresponding each pallet via these air outlets, instead of as background technology, make process gas directly also progressively arrive each pallet at whole chamber internal diffusion.Thereby gas delivery system provided by the invention can shorten the required time of substrate that process gas arrives each pallet and carries, and then can improve the processing speed of substrate and the production efficiency of technique.
Its two, gas delivery system provided by the invention is delivery technology gas equably.Particularly, because gas delivery system provided by the invention is disposed with the multiple process gass air outlet corresponding with pallet along its length, and as mentioned above, because process gas can spread rapidly in this gas delivery system, therefore, the process gas scale of construction of exporting via these process gas air outlets can be comparatively even, and process gas to be delivered to time of each process gas air outlet also roughly equal, so just, make process gas be diffused into the required time of each pallet all roughly equal with the quantity that arrives each pallet, thereby improve the homogeneity of substrate at aspects such as the crystalline film speed of growth and crystalline film thickness, and then the product yield improving.Similarly, owing to being provided with above-mentioned gas delivery system provided by the invention in semiconductor processing equipment provided by the invention, therefore, it can make process gas arrive fast and equably the each substrate on pallet apparatus equally, thereby improve processing speed and the homogeneity of substrate, and then enhanced productivity and product yield.
Brief description of the drawings
Fig. 1 is a kind of diagrammatic cross-section of basic structure of existing crystallized film growth device;
The diagrammatic cross-section of the basic structure of the crystallized film growth device that Fig. 2 provides for first embodiment of the invention; And
The diagrammatic cross-section of the basic structure of the crystallized film growth device that Fig. 3 provides for second embodiment of the invention.
Embodiment
For making those skilled in the art understand better technical scheme of the present invention, below in conjunction with the drawings and specific embodiments, gas delivery system provided by the invention and the semiconductor processing equipment of applying this gas delivery system are described in detail.In these accompanying drawings, for identical or suitable part, mark same numeral.
In technical scheme of the present invention, a kind of gas delivery system for semiconductor processing equipment is provided, it can be to the processing chamber delivery technology gas of semiconductor processing equipment.In the processing chamber of this semiconductor processing equipment, be provided with the pallet apparatus for carrying processed substrate, and this pallet apparatus comprises the multiple pallets along horizontal stacked setting, and between adjacent trays, tool is at regular intervals.Gas delivery system provided by the invention stacked direction along above-mentioned multiple pallets in processing chamber extends, and its development length can cover the length of described multiple pallet on stacked direction.This gas delivery system comprises: inlet mouth, and it is for being incorporated into described gas delivery system by the process gas outside processing chamber; And along the length direction of described gas delivery system and the multiple air outlets that set gradually, it is for making the process gas of gas delivery system output in processing chamber through this and arrive each substrate that described pallet carries.
In actual applications, this gas delivery system can specifically be set to such form:, when each pallet is in the form of a ring when structure, this gas delivery system is arranged to tubulose process gas transfer passage, and make its stacked direction along above-mentioned multiple pallets run through described multiple pallet hollow space, on this tubulose process gas transfer passage, be provided with process gas is introduced to the process gas inlet mouth in it, and multiple process gass air outlet, make process gas carry to its outer part office from pallet hollow bulb office by means of described multiple process gass air outlet.Or, this gas delivery system is set to can be around the tubular process gas transfer passage of pallet apparatus, and on it, there is process gas inlet mouth and multiple process gass air outlet, make process gas heart part conveying wherein from pallet periphery by means of described multiple process gass air outlet.Or, this gas delivery system is set to can be along the multiple tubulose process gas transfer passages that are circumferentially interrupted setting of pallet apparatus, and each tubulose process gas transfer passage is provided with process gas inlet mouth and multiple process gass air outlet, for example, the tubulose process gas transfer passage that 3 or 4 stacked directions along above-mentioned multiple pallets is set and extend in the periphery of pallet apparatus, and preferably make these process gas transfer passages centered by pallet apparatus and be symmetrical arranged, this mode can make process gas heart conveying wherein from pallet periphery equally.
In actual applications, process gas air outlet quantity in gas delivery system can be corresponding with the tray number in pallet apparatus, for example, can process gas air outlet be set corresponding to each pallet, so that process gas directly exports each pallet to by gas delivery system, so that the processed substrate that each pallet carries can obtain process gas fast and equably.
In a preferred embodiment of the invention, for fear of process gas decomposes in course of conveying, and the water cooling tube of being made up of materials such as stainless steels is set in this gas delivery system.Like this, cooling by means of making process gas obtain such as the cooling liqs of water etc. in this water cooling tube.And, for the isotropism of process gas between pallet is controlled, the process gas compensation channels in order to auxiliary delivery technology gas also can be set in this gas delivery system.
In another technical scheme of the present invention, a kind of semiconductor processing equipment of applying above-mentioned gas delivery system is provided, for convenience of description, below in conjunction with Fig. 2 and Fig. 3 and as an example of crystallized film growth device example, this is described in detail.
Refer to Fig. 2, the diagrammatic cross-section of the basic structure of its crystallized film growth device providing for first embodiment of the invention.As shown in Figure 2, the crystallized film growth device that the present embodiment provides comprises chamber wall 206, by chamber wall 206 around forming processing chamber 201, in processing chamber 201, be provided with the pallet apparatus for carrying substrates 203, be provided with chamber venting port 208 in substantial middle position, the left side of chamber wall 206, position on the lower at the chamber on right side wall 206 is provided with sweeping gas entrance 209, and approximate centre position in processing chamber 201 is provided with gas delivery system 204 along horizontal direction.
Wherein, the pallet apparatus being arranged in processing chamber 201 comprises 4 pallet S21～S24 along horizontal stacked setting.All ringwise, and its annular entity part is for carrying the workpiece to be machined such as substrate 203 etc. for 4 pallet S21～S24, and annular entity part is around forming hollow space.
Gas delivery system 204 adopts aforementioned gas delivery system provided by the invention.In the present embodiment, this gas delivery system 204 is a tubulose process gas transfer passage, and passes the hollow space of each pallet from right-to-left.The right-hand member of this gas delivery system 204 is provided with process gas inlet mouth 205, and corresponding to the gap between the gap between pallet S22 and pallet S23 and pallet S23 and pallet S24, process gas air outlet 207 is set, exports process gas in order to the substrate 203 carrying to pallet S22 and pallet S23.
In actual applications, can always control gas delivery system 204 and export to processing chamber 201 by adjusting the setting party of above-mentioned process gas air outlet 207 direction of process gas.For example, can be arranged to tilt to its peripheral portion from pallet hollow space in process gas air outlet 207 along process gas transmission direction, so that process gas tiltedly exports pallet apparatus to from gas delivery system 204 introversions; Or, process gas air outlet 207 can be arranged to substantially vertically with this gas delivery system 204, so that process gas generally perpendicularly blows to pallet apparatus in gas delivery system 204, namely roughly blow to pallet apparatus along the longitudinal direction in figure.
And, in order to prevent that the process gas in processing chamber 201 from directly arriving venting port 208 and discharging processing chamber 201 via the gap between pallet apparatus and gas delivery system 204, and closing cover 210 is set on the pallet S24 of the leftmost side to close the hollow space of leftmost side pallet S24.
There is the load coil 202 around this chamber wall 206 in the arranged outside of top and bottom chamber wall 206, in order to 4 pallet S21～S24 that are arranged in processing chamber 201 are heated by the mode of induction heating, so that processed substrate 203 is temperature required in technique.Conventionally, in this pallet apparatus, near the heat pallet S21 of the rightmost side and the pallet S24 of the leftmost side is easy to scatter and disappear, therefore, in order to ensure temperature field evenly, and the two ends of load coil 202 are arranged closelyer, thereby provide more heat to the pallet S21 of the rightmost side and the pallet S24 of the leftmost side.Certainly, in actual applications, the facilities of load coil 202 can need to set according to actual process, and need not be confined to the form described in the present embodiment.
In order further to ensure that processed substrate 203 can be in uniform temperature field and airflow field, in actual process process, can only on pallet S22 and pallet S23, place substrate 203, and stop the heat radiation of whole pallet apparatus by means of the pallet S21 of the rightmost side and the pallet S24 of the leftmost side, thereby mediate two pallet S22～S23 are incubated, with the residing uniform temperature fields of substrate 203 of guaranteeing pallet S22～S23 and carried.
In actual process process, first, sweeping gas enters in processing chamber 201 via sweeping gas entrance 209, chamber wall 206, pallet apparatus and the substrate 203 that carries thereof are purged clean after through discharged processing chamber 201 by venting port 208.Then, process gas enters into gas delivery system 204 via process gas inlet mouth 205, and enter into the gap between gap and pallet S23 and the pallet S24 between pallet S22 and pallet S23 by the process gas air outlet 207 on gas delivery system 204, carry out vapor phase growth and form crystalline film on the surface that is placed in the processed substrate 203 on pallet S22 and pallet S23.Subsequently, after reaction, gas arrives venting port 208 via the gap between pallet apparatus and chamber wall 206, and discharges processing chamber 201 through this.Wherein, in the present invention, after so-called reaction, gas comprises: the gas generating in technological process and unreacted process gas also in technological process.
Be understandable that, unreacted process gas is in the time of the pallet S24 of the pallet S21 through the rightmost side and the leftmost side, also can carry out vapor phase growth thereon and form crystalline film, thereby the unreacted process gas reducing in the rear gas of reaction adheres to and pollutes in the exhaust system that comprises venting port 208 parts such as grade, and then can reduce the cost of equipment maintenance and the maintenance time that cause because of this pollution.In fact, as long as when the tray number in pallet apparatus is four or more, pallet in the rightmost side and the leftmost side just can carrying substrates and is set to specially serve as a contrast or foil pallet, with so that unreacted process gas carry out vapor phase growth thereon and form crystalline film, to reduce the unreacted process gas that enters into exhaust system.
It should be noted that, as a variant embodiment of the present embodiment, also process gas inlet mouth can be arranged to the left side of processing chamber, like this, gas delivery system will run through the hollow space of pallet apparatus from left to right.And, correspondingly process gas air outlet is arranged to right side.As for other structures, can be similar with the present embodiment, do not repeat them here.
The diagrammatic cross-section of the basic structure of the crystallized film growth device that Fig. 3 provides for second embodiment of the invention.As shown in Figure 3, the crystallized film growth device that the present embodiment provides comprise chamber outer wall 321 for cutting off atmosphere, chamber inner wall 317 and by chamber inner wall 317 around the processing chamber 301 forming.In the present embodiment, chamber inner wall 317 is made up of graphite, and its surface is coated by SiC, and certainly in actual applications, chamber inner wall 317 also can be made up of quartz.
Outside processing chamber 301, be provided with load coil 304 around chamber outer wall 321, in order to the mode by induction heating, the pallet apparatus 330 in processing chamber 301 is heated, so that its processed substrate carrying is temperature required in technique.Be similar to the description of doing in conjunction with Fig. 2 above, in order to ensure pallet apparatus 330 and the substrate that carries thereof in uniform temperature field, in this load coil 304, the spacing of the coil of the part that mediates is arranged roughly equally, and the spacing of the coil in two ends is arranged to such an extent that be less than the coil-span of above-mentioned middle portion, thereby realize the isotropism of temperature.
Be provided with the pallet apparatus 330 for carrying processed substrate in processing chamber 301 inside, this pallet apparatus 330 comprises along 5 pallets that are horizontally arranged at interval, each pallet all ringwise, wherein annular entity part can be used for the workpiece to be machined of carrying such as substrate etc., and annular entity part is around forming hollow space.Each pallet is made by graphite, and surface is coated by SiC.
And, in processing chamber 301 inside, be provided with gas delivery system 310 along the stacked direction of above-mentioned 5 pallets.Gas delivery system 310 is made up of quartz material, and is provided with process gas inlet mouth 312 at its right-hand member, in order to the process gas of chamber outside is introduced to this gas delivery system 310.This gas delivery system 310 comprises a process gas main pipe 313 that runs through whole pallet apparatus 330 hollow spaces from right-to-left, be provided with process gas air outlet (not shown) corresponding to each pallet in pallet apparatus 330 thereon, in order to the process gas in gas delivery system 310 is incorporated into the surface of each pallet.
In the present embodiment, cavity between outer wall 321 and the inwall 317 of processing chamber 301 forms exhaust-duct 320, marginal position place at right side wall is provided with venting port 322 corresponding to this exhaust-duct 320, and on inwall 317, be provided with through hole (not shown), after reaction, gas enters 320 via this through hole, and discharges processing chamber 301 through this exhaust-duct 320.
In actual applications, because the length of process gas main pipe 313 is longer, thereby the air output that makes the process gas air outlet keeping left tends to be less than the air output of the process gas air outlet of keeping right, it is necessary to arrange a process gas offsetting pipe 314, in order to the transport capacity of compensate for process gas main pipe 313, so that the process gas scale of construction that each pallet is accepted is roughly equal.Like this, owing to being provided with process gas offsetting pipe 314, thereby can control the isotropism of process gas between pallet.Certainly, in actual applications, the quantity of process gas main pipe 313 and process gas offsetting pipe 314 can need not be confined to above-mentioned quantity, but can increase as required or reduce.
In addition, for fear of process gas decomposes in course of conveying, and the water cooling tube (not shown) of being made by stainless steel in the interior setting of gas delivery system 310, process gas main pipe 313 contacts with this water cooling tube with process gas offsetting pipe 314, and by means of in water cooling tube such as the cooling liqs of water etc. and that process gas is obtained is cooling.
It is to be noted, for pallet apparatus 330, also can only on the each pallet between between rightmost side pallet and the most left layer pallet, place substrate (not shown), and make to be positioned at the pallet of the rightmost side and the pallet of the leftmost side not carrying substrates only as setoff pallet, guarantee the even of temperature field to stop the heat radiation of whole pallet apparatus 330, and also can consume unreacted process gas, , make unreacted process gas carry out vapor phase growth on this setoff pallet and form crystalline film, thereby avoid unreacted process gas to form particle and bring pollution, also avoid too much in the exhaust system such as venting port 322, adhering to and polluting because reacting the unreacted process gas that rear gas comprises simultaneously, and then can reduce the maintenance of the equipment time and the maintenance cost that cause because of this pollution.
Basic structure and the second embodiment of the invention of the crystallized film growth device that third embodiment of the invention provides are similar, its equally also comprise chamber outer wall for cutting off atmosphere, chamber inner wall and by chamber inner wall around the processing chamber forming, and be also provided with the pallet apparatus for carrying processed substrate in processing chamber inside.The difference of the two is: the gas delivery system in the 3rd embodiment comprises tubular process gas transfer passage, and it arranges around pallet apparatus, for the heart part delivery technology gas wherein of the periphery from pallet apparatus.In actual applications, on tubular process gas transfer passage, be provided with process gas air outlet corresponding to each pallet in pallet apparatus, in order to the process gas in gas delivery system is guided into the surface of each pallet.Correspondingly, exhaust system comprises the exhaust-duct of running through pallet apparatus from right-to-left, discharges processing chamber for gas after reacting, and before its set-up mode and exhaust process are similar to, in conjunction with the explanation of doing in Fig. 3, does not repeat them here.
In addition, in the crystallized film growth device providing in the above embodiment of the present invention, all can be provided with rotating mechanism, rotate around gas delivery system in order to carry multiple layer tray stacked on top of each other, so that be heated evenly and to accept process gas even in the substrate at pallet apparatus different positions place, thereby improve the homogeneity of workpiece processing.In fact, also can make pallet apparatus static, and make rotating mechanism connect gas delivery system and drive this gas delivery system to be rotated around its turning axle, so that temperature and/or the air-flow at each pallet different positions place are even; And/or make rotating mechanism connect load coil and drive this load coil to be rotated around its turning axle, so that temperature and/or the air-flow at each pallet different positions place are even.
It is to be noted, in the time that venting port is connected with off-gas pump (not shown), off-gas pump not only can carry out negative pressure exhaust to processing chamber, and can make the gas flow rates in processing chamber speed, and make adjacent trays and on substrate between airflow field even.Now, not only can make rotating mechanism drive pallet apparatus rotation (or rotating mechanism is no longer set), and can reduce the surperficial stagnant layer thickness of processed substrate.
In actual applications, if the exhaust velocity in processing chamber is too small, the surperficial stagnant layer thickening of processed substrate and cause process gas to heat, and promote organo-metallic process gas to decompose in gas phase, thus easily in crystalline film, sneak into impurity; On the contrary, if make the exhaust velocity in processing chamber excessive, must configure more jumbo off-gas pump, thereby cause equipment cost and energy consumption to increase; The more important thing is, if further improve exhaust velocity, can make organo-metallic process gas just be discharged processing chamber by this off-gas pump before carrying out crystalline film growth, thereby cause the high process gas of price to be wasted.Therefore, exhaust velocity in processing chamber will arrange suitablely, its basic setup principle is exactly both can adopt the commercially available off-gas pump with rated specification and needn't increase equipment cost, can avoid again the less desirable active substance growth in gas phase, thereby obtain the crystalline film of high-quality, can also avoid expensive organo-metallic process gas before crystalline film growth, to be just discharged from carrying out simultaneously.
It is to be noted, although the tray number that the pallet apparatus in the crystallized film growth device that the above embodiment of the present invention provides comprises is 4 or 5, but the pallet of different quantities can be set in actual applications as required, for example 3 or 3 above pallets, and do not limit above-described embodiment.And although the above embodiment of the present invention is to describe as an example of crystallized film growth device example, but in actual applications, semiconductor processing equipment is not limited to this, but also can be other semiconductor processing equipment.
Be understandable that, above embodiment is only used to principle of the present invention is described and the illustrative embodiments that adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (14)
1. a gas delivery system, for the processing chamber delivery technology gas to semiconductor processing equipment, in described processing chamber, be provided with pallet apparatus, described pallet apparatus comprises the multiple pallets for carrying substrates along horizontal stacked setting, it is characterized in that, described gas delivery system comprises: inlet mouth, and it is for being incorporated into described gas delivery system by the process gas outside processing chamber; And along the length direction of described gas delivery system and be disposed with and each described pallet air outlet one to one, it is for making process gas heart conveying wherein from described multiple pallets periphery of gas delivery system, or its peripheral conveying of mind-set in described multiple pallets, to improve the homogeneity that arrives each on-chip process gas that described multiple pallet was carried.
2. gas delivery system according to claim 1, is characterized in that, described gas delivery system also comprises the water cooling tube in order to cool process gas.
3. gas delivery system according to claim 1, is characterized in that, described gas delivery system also comprises the gas compensation passage in order to auxiliary delivery technology gas.
4. gas delivery system according to claim 1, is characterized in that, described gas delivery system comprises tubular gas delivery channels, and it can be by described pallet apparatus around in the inner and to the substrate delivery technology gas being placed on described pallet; Or
Described gas delivery system comprises multiple gas delivery channels, and described pallet apparatus periphery all can be extended and be arranged on to each gas delivery channels along the length direction of this gas delivery system; Or
Described gas delivery system comprises the tubular gas transfer passage that at least one extends along the length direction of described gas delivery system, and described at least one tubular gas transfer passage can run through described pallet apparatus along the stacked direction of described multiple pallets.
5. a semiconductor processing equipment, comprise processing chamber, gas delivery system and exhaust system, in described processing chamber, be provided with the pallet apparatus for carrying substrates, described pallet apparatus comprises the multiple pallets along horizontal stacked setting, and between adjacent trays, tool is at regular intervals, it is characterized in that, described gas delivery system is the gas delivery system described in claim 1-4 any one, and its stacked direction along described multiple pallets in processing chamber extends.
6. semiconductor processing equipment according to claim 5, is characterized in that, described pallet structure in the form of a ring, and described gas delivery system runs through the hollow space of the pallet of described stacked setting along the stacked direction of described multiple pallets, and
Described exhaust system is arranged on the periphery of described multiple pallets, and after reaction, gas is discharged processing chamber via this exhaust system.
7. semiconductor processing equipment according to claim 5, is characterized in that, described gas delivery system arranges around described pallet apparatus, and by process gas export to by around each substrate that pallet apparatus carried, and
Described pallet structure in the form of a ring, described exhaust system runs through the hollow space of the pallet of described stacked setting along the stacked direction of described multiple pallets, and after reaction, gas is discharged processing chamber via this exhaust system.
8. semiconductor processing equipment according to claim 7, is characterized in that, described gas delivery system comprises tubular gas delivery channels, and it arranges around described pallet apparatus; Or described gas delivery system comprises multiple gas delivery channels, each gas delivery channels is all arranged on the peripheral of described pallet apparatus and extends along the length direction of this gas delivery system.
9. semiconductor processing equipment according to claim 5, characterized by further comprising induction heater, and it is arranged on processing chamber outside, for the mode with induction heating, the inside of processing chamber is heated.
10. semiconductor processing equipment according to claim 9, characterized by further comprising rotating mechanism, in order to drive described pallet apparatus with respect to described gas delivery system and/or induction heater rotation.
11. semiconductor processing equipments according to claim 10, is characterized in that, described rotating mechanism connects described pallet apparatus and drives this pallet apparatus to be rotated around its turning axle, so that temperature and/or the air-flow at each pallet different positions place are even; And/or
Described rotating mechanism connects described gas delivery system and drives this gas delivery system to be rotated around its turning axle, so that temperature and/or the air-flow at each pallet different positions place are even; And/or
Described rotating mechanism connects described induction heater and drives this induction heater to be rotated around its turning axle, so that temperature and/or the air-flow at each pallet different positions place are even.
12. semiconductor processing equipments according to claim 5, is characterized in that, described exhaust system also comprises extraction sector, in order to described processing chamber is carried out to negative pressure exhaust.
13. semiconductor processing equipments according to claim 5, characterized by further comprising sweeping gas entrance, in order to processing chamber is cleaned by sweeping gas.
14. semiconductor processing equipments according to claim 5, is characterized in that, described semiconductor processing equipment is crystallized film growth device.
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| TWI514526B (en) * | 2013-12-13 | 2015-12-21 | 矽品精密工業股份有限公司 | Carrier member and method for fixing electronic component by using the carrier member |
| CN107195567B (en) * | 2016-03-14 | 2020-11-10 | 北京北方华创微电子装备有限公司 | Cooling chamber and semiconductor processing equipment |
| CN106191990B (en) * | 2016-08-30 | 2018-10-16 | 上海华力微电子有限公司 | A kind of inlet duct of boiler tube |
| CN110218976A (en) * | 2019-07-17 | 2019-09-10 | 南通职业大学 | A kind of components automatic film coating device |
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Address after: 100015 No. 8, Wenchang Avenue, Beijing economic and Technological Development Zone, Beijing Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100015, M5 building, No. 1 Jiuxianqiao East Road, Beijing, Chaoyang District, two South Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |