JPH09246192A - Thin film gas phase growing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent an adhesion of a product to a reactor wall face upward of a film formation substrate and to prevent particle contamination. SOLUTION: A plurality of leaves of film formation substrates 2 are disposed on a susceptor 1. A coaxial nozzle 4 is vertically provided on a wall face of a reactor 3 positioned upward of the susceptor 1, and the same nozzle has an inner valve 5 and an outer valve 6 for supplying material gases A, B of two systems and additionally a supply valve 8 of a barrier gas C outside the outer valve 6. The material gases A, B from the inner valve 5 and the outer valve 6 flow radially and in a radius direction on an upper face of the susceptor 1 and mixed immediately before a film formation substrate, so that a film is grown on the substrate by a thermal chemical reaction. The barrier gas C from a barrier gas supply valve 8 flows along the reactor wall face between the reactor wall face and the material gas, so that the adhesion of a product due to material gas to the reactor wall face is prevented.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film vapor deposition apparatus for batch processing a plurality of film formation substrates, and more particularly to an apparatus for preventing particle contamination of the film formation substrates.

[0002]

2. Description of the Related Art FIG. 2 shows a thin film vapor deposition apparatus for performing batch processing, in which a plurality of substrates to be deposited are arranged on a susceptor through which a source gas flows in a radial direction, particularly metal organic chemical vapor deposition (MOC).
It is a longitudinal cross-sectional view of a VD) device.

A plurality of film-forming substrates 2 are arranged at equal intervals on the upper surface of a circular susceptor 1, and the upper wall surface of the reactor 3 is located above the susceptor in parallel with the susceptor.
A raw material gas introduction nozzle 4 is vertically provided on the wall surface of the reactor 3 above the center of the susceptor 1, and the nozzle has a double pipe structure including an inner pipe 5 and an outer pipe 6 arranged coaxially. Thus, the open end of the inner pipe for supplying the raw material gas A, that is, the gas outlet and the outlet for the outer pipe supplying the raw material gas B are located above the center of the susceptor. A collar-shaped partition plate 7 is provided around the outlet of the inner pipe 5 to prevent both raw material gases A and B from the inner pipe 5 and the outer pipe 6 from mixing at the outlet. The flow of the source gas B from the outer tube is radially guided in the radial direction of the susceptor 1.

When a group III-V group compound semiconductor is grown on the film formation substrate 2, a group V source gas A is supplied from the inner tube 5 and a group III source gas B is supplied from the outer tube 6. Inner tube 5
Source gas A from the opening end and the outlet of B, and source gas B supplied from the outer tube 6 and changed in direction by the partition plate 7.
Flow radially in a horizontal direction on the upper surface of the susceptor. The source gases A and B are mixed immediately before the film formation substrate 2 due to the presence of the partition plate 7, flow in a laminar flow state, and are exhausted in the horizontal direction as they are. The film formation substrate 2 is heated via the susceptor 1, and the mixed source gas undergoes a thermochemical reaction, and by rotating the susceptor, a film is uniformly grown on the film formation substrate.

[0005]

The raw material gases A and B supplied onto the film-forming substrate 2 placed on the susceptor 1 are partially film-formed on the substrate by a thermochemical reaction. It adheres to the wall surfaces of the susceptor 1 being heated and the reactor 3 being heated by radiation heat from the susceptor. The product attached to the reactor wall is accumulated as the number of film forming processes is increased. If the particles of the adhesion product fall on the film formation substrate 2, the quality of the film formation is impaired. In order to prevent particle contamination of the film formation substrate, maintenance such as cleaning of the reactor wall must be frequently performed.

It is an object of the present invention to provide a thin film vapor phase growth apparatus which prevents the deposition of products on the wall surface of a reactor.

[0007]

According to the present invention, two lines of raw material gas are arranged on a susceptor from a coaxial nozzle having an inner pipe and an outer pipe which are vertically provided on a reactor wall above the susceptor. In a thin film vapor phase growth apparatus for horizontally supplying to the upper surface of a film formation substrate, a barrier gas supply pipe is coaxially provided outside the outer pipe of the coaxial nozzle, and the barrier gas supply pipe extends along the reactor wall surface. It is characterized in that the barrier gas is made to flow.

[0008]

BEST MODE FOR CARRYING OUT THE INVENTION A coaxial nozzle is vertically provided on a wall surface of a reactor located above a susceptor. The nozzle is formed in a coaxial triple pipe structure having an inner pipe and an outer pipe for supplying raw material gas of two systems, and a barrier gas supply pipe outside the outer pipe. The open ends of the inner pipe, outer pipe, and barrier gas supply pipe, that is, the gas outlets are located above the center of the susceptor, and from the susceptor side, the inner pipe outlet, the outer pipe outlet, and the barrier gas supply pipe outlet. The mouth is located. The two source gases from the inner tube and the outer tube radially and radially flow on the upper surface of the susceptor, and are mixed immediately before a plurality of film-forming substrates arranged on the susceptor, and are thermochemically reacted on the substrate. Grow the film on.

The barrier gas from the outlet of the barrier gas supply pipe farthest from the susceptor flows along the reactor wall surface between the reactor wall surface and the source gas. Therefore, it is possible to prevent the raw material gas of the two systems and the mixed gas thereof from coming into contact with the wall surface of the reactor, prevent the product from adhering, and prevent particle contamination of the film formation substrate.

[0010]

Embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a longitudinal sectional view of the embodiment, and the same reference numerals as those in FIG. 2 indicate the same or equivalent portions. A plurality of film formation substrates 2 are arranged at equal intervals on the upper surface of a circular susceptor 1,
On the wall surface of the reactor 3 located above the susceptor 1, a coaxial raw material gas introduction nozzle 4 having a triple tube structure is vertically provided. The nozzle has an inner pipe 5 and an outer pipe 6 for supplying the raw material gases A and B of two systems, and a barrier gas supply pipe 8 for further supplying a barrier gas C outside the outer pipe.

The inner pipe 5, the outer pipe 6, and the opening ends of the barrier gas supply pipe 8 and the gas outlet are located above the center of the susceptor in order from the susceptor side, and are the inner pipe outlet, the outer pipe outlet, and the barrier gas. The outlet of the supply pipe is located.
And, around the outer periphery of the outlets of the inner pipe 5 and the outer pipe 6,
Collar-shaped partition plates 7 and 9 are provided respectively, and these partition plates prevent mixing of the gases, and the source gas B and the barrier gas C from the outer pipe and the barrier gas supply pipe are radially radiated from the center of the susceptor, in the radial direction. Induce to.

The raw material gases A and B supplied from the inner pipe 5 and the outer pipe 6 of the raw material gas introduction nozzle 4 are mixed immediately before the film-forming substrate 2 heated via the rotating susceptor 1 to generate heat. A film is uniformly grown on the surface of the substrate by a chemical reaction. The barrier gas such as hydrogen gas supplied from the open end of the barrier gas supply pipe 8 is guided along the wall surface of the reactor 3 by the partition plate 9 attached around the gas outlet of the outer pipe 6, and the inner pipe 5 And the raw material gases A and B supplied from the outer tube 6 and the mixed gas thereof flow between the raw material gas and the reactor wall surface to prevent the raw material gas from contacting the wall surface of the reactor 3, and the product adheres to the reactor wall surface. Prevent from doing.

[0013]

Since the present invention is configured as described above, the barrier gas flows between the raw material gas flowing over the surfaces of the plurality of deposition target substrates to be batch processed and the reactor wall surface. Can be prevented from coming into contact with the wall surface of the reactor 3, and the adhesion of products to the wall surface can be prevented, so that particle contamination of the film formation substrate can be reduced and prevented, and
The frequency of maintenance such as reactor cleaning can be reduced.

[Brief description of drawings]

FIG. 1 is a longitudinal sectional view of an embodiment of the present invention.

FIG. 2 is a vertical cross-sectional view of a conventional example of a metal-organic vapor phase epitaxy apparatus that performs batch processing.

[Explanation of symbols]

 1 Susceptor 2 Substrates for film formation 3 Reactor 4 Raw material gas introduction nozzle 5 Inner tube 6 Outer tube 7 Partition plate 8 Barrier gas supply pipe 9 Partition plate

Claims (1)

[Claims] 1. An upper surface of a plurality of film formation substrates arranged on a susceptor, wherein two lines of source gas are supplied from a coaxial nozzle having an inner pipe and an outer pipe which are vertically provided on a reactor wall above the susceptor. In the thin film vapor phase epitaxy system that supplies the
A thin film vapor phase growth apparatus, characterized in that a barrier gas supply pipe is coaxially provided outside the outer pipe of the coaxial nozzle, and a barrier gas is caused to flow from the barrier gas supply pipe along the reactor wall surface.