JPH03287770A - Single wafer processing atmospheric cvd device - Google Patents
Single wafer processing atmospheric cvd deviceInfo
- Publication number
- JPH03287770A JPH03287770A JP9059690A JP9059690A JPH03287770A JP H03287770 A JPH03287770 A JP H03287770A JP 9059690 A JP9059690 A JP 9059690A JP 9059690 A JP9059690 A JP 9059690A JP H03287770 A JPH03287770 A JP H03287770A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- wafer
- upper chamber
- susceptor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007789 gas Substances 0.000 claims abstract description 21
- 238000006243 chemical reaction Methods 0.000 claims abstract description 13
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 claims description 8
- 239000012495 reaction gas Substances 0.000 claims description 7
- 239000010408 film Substances 0.000 abstract description 25
- 239000010409 thin film Substances 0.000 abstract description 10
- 239000000758 substrate Substances 0.000 abstract description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000376 reactant Substances 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000012159 carrier gas Substances 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 21
- 238000005229 chemical vapour deposition Methods 0.000 description 14
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000011437 continuous method Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野コ
本発明はCVD薄膜形成装置に関する。更に詳細には、
本発明は膜厚の均一性を向上させることのできる枚葉式
常圧CVD装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a CVD thin film forming apparatus. More specifically,
The present invention relates to a single-wafer atmospheric pressure CVD apparatus that can improve the uniformity of film thickness.
[従来技術]
薄膜の形成方法として半導体工業において一般に広く用
いられているものの一つに化学的気相成長法(CVD:
Chemical VapourDepos i t
1on)がある。CVDとは、ガス状物質を化学反応
で固体物質にし、基板上に堆積することをいう。[Prior Art] One of the methods widely used in the semiconductor industry for forming thin films is chemical vapor deposition (CVD).
Chemical Vapor Depos it
1on). CVD refers to turning a gaseous substance into a solid substance through a chemical reaction and depositing it on a substrate.
CVDの特徴は、成長しようとする薄膜の融点よりかな
り低い堆積温度で種々の薄膜が得られること、および、
成長した薄膜の純度が高(、SiやSi上の熱酸化膜上
に成長した場合も電気的特性が安定であることで、広く
半導体表面のパッシベーション膜として利用されている
。Characteristics of CVD are that various thin films can be obtained at deposition temperatures considerably lower than the melting point of the thin film to be grown;
Because the grown thin film has high purity (and its electrical characteristics are stable even when grown on Si or a thermal oxide film on Si), it is widely used as a passivation film on semiconductor surfaces.
CVDによる薄膜形成は、例えば約400℃−500℃
程度に加熱したウェハに反応ガス(例えば、SiH++
02.またはSiH4+PH3+02)を供給して行わ
れる。上記の反応ガスは反応炉(ベルジャ)内のウェハ
に吹きつけられ、該ウェハの表面に5i02あるいはフ
ォスフオシリケードガラス(PSG)またはポロシリケ
ートガラス(BSG)の薄膜を形成する。また、5i0
2とPSGまたはBSGとの2層成膜が行われることも
ある。更に、モリブデン、タングステンあるいはタング
ステンシリサイド等の金属薄膜の形成にも使用できる。Thin film formation by CVD is performed at a temperature of approximately 400°C to 500°C, for example.
A reactive gas (for example, SiH++
02. Or SiH4+PH3+02) is supplied. The above reaction gas is blown onto the wafer in a reactor (belljar) to form a thin film of 5i02 or phosphorus silicate glass (PSG) or porosilicate glass (BSG) on the surface of the wafer. Also, 5i0
In some cases, two-layer film formation of 2 and PSG or BSG is performed. Furthermore, it can also be used to form metal thin films such as molybdenum, tungsten or tungsten silicide.
CVDの成膜処理操作には、ウェハー枚毎に成膜する枚
葉式と、十数枚のウェハを一度に成膜するバッチ式およ
びウェハを連続的に搬送しながら成膜する連続式とがあ
る。枚葉式は大口径ウエノ\に均一なCVD膜を形成す
るのに適している。There are three types of CVD film-forming processing operations: single-wafer method that deposits film on each wafer, batch method that deposits film on more than ten wafers at once, and continuous method that deposits film while continuously transporting wafers. be. The single-wafer type is suitable for forming a uniform CVD film on a large-diameter Ueno film.
従来の枚葉式常圧CVD装置は第2図に示されるように
、上側チャンバ10と下側チャンバ12とからなる反応
室の内部に、回転および昇降可能なサセプタ14が配置
されており、上側チャンバの上面に反応ガス供給手段1
6が配設されている。As shown in FIG. 2, in a conventional single-wafer atmospheric pressure CVD apparatus, a susceptor 14 that can rotate and move up and down is arranged inside a reaction chamber consisting of an upper chamber 10 and a lower chamber 12. Reaction gas supply means 1 on the top surface of the chamber
6 are arranged.
このガス供給手段はSiH+と02を別々のパイプから
供給できるように構成されている。上側チャンバ10と
下側チャンバ12とはヒンジ部材20により接続され、
上側チャンバ10が開閉可能に構成されている。このよ
うな構成により反応室内を定期的に清掃することができ
る。This gas supply means is configured so that SiH+ and 02 can be supplied from separate pipes. The upper chamber 10 and the lower chamber 12 are connected by a hinge member 20,
The upper chamber 10 is configured to be openable and closable. With such a configuration, the inside of the reaction chamber can be cleaned regularly.
[発明が解決しようとする課題]
しかし、第2図のような装置では、反応ガスがウェハ1
8の真上から流下してくるので、ウェハ18の中央部の
膜厚が厚くなり、周辺部が薄くなる傾向があった。[Problem to be solved by the invention] However, in the apparatus shown in FIG.
Since the film flows down from directly above the wafer 18, the film thickness tends to be thicker at the center of the wafer 18 and thinner at the periphery.
従って、本発明の目的は膜厚均一性を向上させることの
できる枚葉式常圧CVD装置を提供することである。Therefore, an object of the present invention is to provide a single-wafer atmospheric pressure CVD apparatus that can improve film thickness uniformity.
[課題を解決するための手段]
前記問題点を解決し、あわせて本発明の目的を達成する
ための手段として、この発明は、上側チャンバと下側チ
ャンバとからなる反応室内に、回転および昇降可能なサ
セプタが配置されている枚葉式常圧CVD装置において
、前記上側チャンバの上面には反応ガス供給手段が配設
されており、かつ、該上側チャンバの内側には、供給さ
れた反応ガスの流れを均一化するための多数の貫通スリ
ットを有する整流板が該上側チャンバに固着されており
、前記貫通スリットの下端寄りガス吹き出し口がガスの
流れ方向に向かって20〜45@傾斜していることを特
徴とする枚葉式常圧CVD装置を提供する。[Means for Solving the Problems] As a means for solving the above-mentioned problems and also achieving the object of the present invention, the present invention provides a system for rotating and raising/lowering a reaction chamber consisting of an upper chamber and a lower chamber. In a single-wafer atmospheric pressure CVD apparatus in which a susceptor is disposed, a reactant gas supply means is disposed on the upper surface of the upper chamber, and the supplied reactant gas is disposed inside the upper chamber. A rectifying plate having a large number of through slits for making the flow uniform is fixed to the upper chamber, and the gas outlet near the lower end of the through slit is inclined by 20 to 45 degrees toward the gas flow direction. Provided is a single-wafer atmospheric pressure CVD apparatus characterized by:
[作用]
前記のように、本発明のCVD装置は貫通スリットのガ
ス吹出口がガスの流れ方向に向かって所定の角度で傾斜
されているので、ウェハ全面で均一な流れができ、膜厚
の均一性が向上される。[Function] As described above, in the CVD apparatus of the present invention, the gas outlet of the through-slit is inclined at a predetermined angle toward the gas flow direction, so that a uniform flow can be achieved over the entire surface of the wafer, and the film thickness can be reduced. Uniformity is improved.
[実施例]
以下、図面を参照しながら本発明の一実施例について更
に詳細に説明する。[Example] Hereinafter, an example of the present invention will be described in more detail with reference to the drawings.
第1図は本発明の枚葉式常圧CVD装置の一実施例の概
念図である。FIG. 1 is a conceptual diagram of an embodiment of a single-wafer atmospheric pressure CVD apparatus of the present invention.
第1図に示される装置において第2図の従来の装置と同
一の部材については第2図で使用された符号と同じ符号
を使用する。Components in the apparatus shown in FIG. 1 that are the same as those in the conventional apparatus shown in FIG. 2 are designated by the same reference numerals as used in FIG.
第1図における本発明の枚葉式CVD装置も従来の装置
と同様に上側チャンバ10と下側チャンバ12とからな
る。上側チャンバ10と下側チャンバ12とはヒンジ部
材20により接続され、上側チャンバ10が開閉可能に
構成されている。図示されていないが、装置稼働中は、
上側チャンバ10と下側チャンバ12とは適当なりラン
プ機構などにより圧締めされている。The single-wafer CVD apparatus of the present invention shown in FIG. 1 also consists of an upper chamber 10 and a lower chamber 12, similar to the conventional apparatus. The upper chamber 10 and the lower chamber 12 are connected by a hinge member 20, and the upper chamber 10 is configured to be openable and closable. Although not shown, while the device is in operation,
The upper chamber 10 and the lower chamber 12 are clamped together by a suitable ramp mechanism or the like.
上側チャンバ10の内部には整流板30が配設されてい
る。整流板30の上面側にガス拡散空間32が形成され
ている。A current plate 30 is disposed inside the upper chamber 10. A gas diffusion space 32 is formed on the upper surface side of the current plate 30.
整流板30のウェハ対同部分には、前記ガス拡散空間3
2から反応空間38に抜ける多数の貫通孔40が設けら
れている。また、整流板30の下端の適当な一箇所に排
気口42を設ける。この排気口42は装置の排気ダクト
44に隣接して設けることが好ましい。整流板の排気口
は装置の排気ダクトに連結し、一体化してはならない。The gas diffusion space 3 is located in the same portion of the rectifying plate 30 as the wafer.
A large number of through holes 40 extending from the reaction space 2 to the reaction space 38 are provided. Further, an exhaust port 42 is provided at a suitable location on the lower end of the current plate 30. This exhaust port 42 is preferably located adjacent to the exhaust duct 44 of the device. The air outlet of the baffle plate shall be connected to the equipment exhaust duct and shall not be integrated with it.
また、前記貫通孔40を排気口42の方向に向けて20
〜45′の角度で傾斜させる。傾斜角度が20゜未満で
はガスが水平に流れ、ウェハ表面に接触しない恐れがあ
る。また、傾斜角度が45°超では垂直吹付けのように
なり膜厚均一性の改善効果が期待できない。貫通孔の吹
き出し角度を20〜45@の範囲内にすると、ウェハ全
面で均一なガス流れが形成され、異物発生が抑制される
ばかりか、デポレートも増大させることができる。Further, the through hole 40 is oriented 20 mm toward the exhaust port 42.
Tilt at an angle of ~45'. If the inclination angle is less than 20 degrees, the gas will flow horizontally and may not come into contact with the wafer surface. Further, if the inclination angle exceeds 45°, the spraying becomes like vertical spraying, and no improvement in film thickness uniformity can be expected. When the blowing angle of the through hole is within the range of 20 to 45@, a uniform gas flow is formed over the entire surface of the wafer, and not only the generation of foreign matter is suppressed, but also the deposition rate can be increased.
反応空間38内をガスが排気口42に向かってスムーズ
に流れるようにするため、サセプタ14を囲む包囲板4
6および48を設けることが好ましい。包囲板46とサ
セプタ14との間には極く僅かな隙間があり、サセプタ
14の昇降には支障がない。In order to allow gas to smoothly flow inside the reaction space 38 toward the exhaust port 42, a surrounding plate 4 surrounding the susceptor 14 is provided.
6 and 48 are preferably provided. There is a very small gap between the surrounding plate 46 and the susceptor 14, and there is no problem in raising and lowering the susceptor 14.
サセプタ14はエアシリンダ50などの常用の昇降機構
により昇降可能に構成されている。エアシリンダ50は
例えば、支柱60の下面に配設することが好ましい。成
膜反応を実施する場合にはサセプタを上昇させ、成膜反
応終了後は下降させる。サセプタの上面がゲート部(図
示されていない)の所に達したら下降を停止させる。The susceptor 14 is configured to be able to be raised and lowered by a commonly used raising and lowering mechanism such as an air cylinder 50. For example, the air cylinder 50 is preferably disposed on the lower surface of the support column 60. When carrying out a film forming reaction, the susceptor is raised, and after the film forming reaction is completed, it is lowered. When the upper surface of the susceptor reaches a gate portion (not shown), the lowering is stopped.
サセプタ14は回転可能に構成されている。例えば、サ
セプタ14を脚62により回転板64に固着し、この回
転板64と支柱60の間に自転ベアリング66を挿入す
る。図示されていない適当な駆動源により回転板64を
回転させるとサセプタ14が回転される。サセプタ14
は成膜反応処理中だけ回転される。The susceptor 14 is configured to be rotatable. For example, the susceptor 14 is fixed to a rotary plate 64 by legs 62, and a rotation bearing 66 is inserted between the rotary plate 64 and the column 60. The susceptor 14 is rotated when the rotating plate 64 is rotated by an appropriate driving source (not shown). Susceptor 14
is rotated only during the film forming reaction process.
本発明の装置によりCVD膜を成膜する場合、前記のよ
うにサセプタ14が上昇され、整流板30の包囲板46
の高さ位置で停止される。反応ガス送入手段16から反
応ガス拡散空間32にガスが送られ、貫通孔40からサ
セプタ上面に載置されたウェハ18に流下する。ウェハ
18はサセプタ14のヒータ68により所定温度にまで
加熱されており、加熱ウェハ表面で成膜反応が行われる
。When forming a CVD film using the apparatus of the present invention, the susceptor 14 is raised as described above, and the surrounding plate 46 of the rectifying plate 30 is
It will be stopped at a height of . Gas is sent from the reaction gas supply means 16 to the reaction gas diffusion space 32 and flows down from the through hole 40 to the wafer 18 placed on the upper surface of the susceptor. The wafer 18 is heated to a predetermined temperature by the heater 68 of the susceptor 14, and a film forming reaction is performed on the heated wafer surface.
成膜処理中、ウェハはサセプタと共に回転している。During the film deposition process, the wafer is rotating together with the susceptor.
[発明の効果]
以上説明したように、本発明のCVD!tIiFは貫通
スリットのガス吹出口がガスの流れ方向に向かって所定
の角度で傾斜されているので、ウェハ全面で均一な流れ
ができ、膜厚の均一性が向上される。[Effects of the Invention] As explained above, the CVD! of the present invention! In tIiF, the gas outlet of the through-slit is inclined at a predetermined angle toward the gas flow direction, so that a uniform flow can be achieved over the entire surface of the wafer, improving the uniformity of the film thickness.
本発明の装置で成膜すると、ウェハ全面に縦方向に薄膜
が堆積される成膜状態となるために膜質が改善される。When a film is formed using the apparatus of the present invention, the film quality is improved because a thin film is vertically deposited over the entire surface of the wafer.
また、ウェハ全面で均一な層流ができ、乱流や渦流は出
来ないので、異物の発生が抑制されるばかりか、デポレ
ートを増大させることができる。Further, since a uniform laminar flow is generated over the entire surface of the wafer and no turbulent flow or eddy flow is generated, not only the generation of foreign matter is suppressed, but also the deposition rate can be increased.
第1図は本発明の枚葉式常圧CVD装置の一実施例の概
念図であり、第2図は従来の枚葉式常圧CVD装置の一
例の概念図である。
10・・・上側チャンバ、12・・・下側チャンバ。
14・・・サセプタ、16・・・反応ガス送入手段。
18・・・ウェハ、30・・・整流板、40・・・貫通
孔。
42・・・排気口、46および48・・・包囲板6
第2図FIG. 1 is a conceptual diagram of an embodiment of a single wafer type normal pressure CVD apparatus of the present invention, and FIG. 2 is a conceptual diagram of an example of a conventional single wafer type normal pressure CVD apparatus. 10... Upper chamber, 12... Lower chamber. 14... Susceptor, 16... Reaction gas feeding means. 18... Wafer, 30... Rectifying plate, 40... Through hole. 42...Exhaust port, 46 and 48...Surrounding plate 6 Fig. 2
Claims (1)
に、回転および昇降可能なサセプタが配置されている枚
葉式常圧CVD装置において、前記上側チャンバの上面
には反応ガス供給手段が配設されており、かつ、該上側
チャンバの内側には、供給された反応ガスの流れを均一
化するための多数の貫通スリットを有する整流板が該上
側チャンバに固着されており、前記貫通スリットの下端
寄りガス吹き出し口がガスの流れ方向に向かって20〜
45゜傾斜していることを特徴とする枚葉式常圧CVD
装置。(1) In a single-wafer atmospheric pressure CVD apparatus in which a rotatable and movable susceptor is disposed in a reaction chamber consisting of an upper chamber and a lower chamber, a reaction gas supply means is disposed on the upper surface of the upper chamber. and a baffle plate having a large number of through slits for uniformizing the flow of the supplied reaction gas is fixed to the inside of the upper chamber, and the lower end of the through slit is fixed to the upper chamber. The side gas outlet is 20~ towards the direction of gas flow.
Single-wafer atmospheric pressure CVD characterized by a 45° inclination
Device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9059690A JPH03287770A (en) | 1990-04-05 | 1990-04-05 | Single wafer processing atmospheric cvd device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9059690A JPH03287770A (en) | 1990-04-05 | 1990-04-05 | Single wafer processing atmospheric cvd device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03287770A true JPH03287770A (en) | 1991-12-18 |
Family
ID=14002852
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9059690A Pending JPH03287770A (en) | 1990-04-05 | 1990-04-05 | Single wafer processing atmospheric cvd device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03287770A (en) |
Cited By (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5712001A (en) * | 1995-03-20 | 1998-01-27 | Matsushita Electric Industrial Co., Ltd. | Chemical vapor deposition process for producing oxide thin films |
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