JPS63150912A - Formation of thin film and apparatus therefor - Google Patents

Abstract

PURPOSE:To make the title method to cope with the increase of the number of substrates treated and the augmentation of aperture ratio while equalizing film thickness at every substrate and film thickness by vertically laminating and arranging a substrate group to a columnar shape onto a peripheral space separated at a regular interval in the radial direction from the central section of an active space and flowing a reaction gas toward a central section from the peripheral section of the space or toward the opposite direction in the thin- film formation through a CVD method and an oxidation diffusion method. CONSTITUTION:A reaction gas introduced to an upper position in a reaction chamber 1A from a gas introducing port 13 positioned at the nose of a gas introducing pipe 4 flows to a curtain shape toward a vertical lower section along the inner wall of an inner vessel 2 at the position of the terminal of a guide plate 9 while being dispersed and laminarized to the peripheral side of the reaction chamber 1A along the guide plate 9. The reaction gas flows into reaction regions on the surface of each wafer 20 in succession from water laminating space-positions 22 oppositely faced to the peripheral section of the vessel, and laminarized, and vapor phase growth is conducted by a raw gas not reacted, and the reaction gas passing in the reaction regions on the surfaces of single wafers 20 is discharged to the outside of the vessel through an exhaust port 6 from a central space without passing in the reaction regions on the surfaces of other wafers 20.

Description

DETAILED DESCRIPTION OF THE INVENTION "Industrial Application Field" The present invention is applicable to the formation of oxide films, insulating films, or substrates on semiconductor wafers or other substrates, for example, by chemical reactions between reactive gases or chemical reactions between reactive gases and substrates. A vapor phase growth apparatus that produces a single crystal film (epitaxial) etc. having the same crystal orientation as
Regarding oxidation diffusion furnaces and other thin film growth methods and equipment,
In particular, the present invention relates to a method and apparatus for producing a thin film that can produce a uniform coating on a large number of substrates.

rPrior art" Conventionally, a disc-shaped susceptor plate is rotatably arranged in a bell jar-type reaction vessel surrounded by a high-frequency induction heating element, and the induction heating element heats the susceptor together with the susceptor plate. The substrate placed in close contact with each other is placed in a high temperature range (1100~120
A device (hereinafter referred to as the first prior art) that performs a specified vapor phase growth by flowing a reaction gas over the substrate surface while maintaining heating at 0°C), and a cylindrical reaction device surrounded by a high-frequency induction heating element. A polygonal frustum-shaped susceptor is rotatably arranged in the tube along the axis, and a plurality of substrates are attached to the side surfaces of the susceptor facing the heating element, respectively, and a reactive gas is caused to flow over the surfaces of the substrates. There exists an apparatus (hereinafter referred to as the second prior art) that performs predetermined vapor phase growth.

However, in the first conventional technology, the number of substrates processed is necessarily small because the substrates are arranged on a single plane perpendicular to the axis of the reaction vessel, and as the diameter of the substrate becomes larger, the susceptor can be used more effectively. There also arises the problem that the area is reduced.

Also, in the second prior art, since the substrate is attached to each face of a truncated polygonal pyramid, the larger the diameter of the substrate, the lower the effective area and the more complicated the substrate arrangement. This makes automatic handling operations difficult.

In addition, in all of the above-mentioned conventional techniques, since the substrate is placed in close contact with the susceptor, which is the heating element, it is necessary to bring some kind of conveying member into contact with the surface of the substrate when mounting/demounting the substrate. This tends to cause contamination of the substrate and reduction in yield.

For this purpose, for example, as shown in FIG. 6, a substrate support jig 103 having an axis that coincides with the axis of the vessel 102 is provided in a cylindrical reaction vessel 102 having a resistance heating element or other heat source 101 arranged on the outer periphery. , a container 102 is placed inside the support jig 103.
The substrates 104 are stacked and arranged in parallel in a multi-tiered manner, almost perpendicular to the axis, and a reaction gas is flowed onto the substrate 104 from a nozzle 105 attached to the upper end of the container 102 toward a gas exhaust port 106 at the lower end of the container 102. An apparatus for performing predetermined vapor phase growth has been proposed. (Unexamined Japanese Patent Publication No. 8
No. 0-152875 et al., hereinafter referred to as the third prior art) According to this device, the substrates 104 are stacked and arranged in a multi-tiered manner substantially orthogonal to the axis of the cylindrical container 102, so compared to the above two prior art techniques, It is possible to provide a vertical thin film generating apparatus that can handle an increase in the number of sheets to be processed and a larger diameter.

``Problems to be Solved by the Invention'' However, according to the prior art, since the substrates are stacked and arranged coaxially with the reaction vessel, the more substrates are stored, the more the reaction vessel and its surroundings are The surrounding heating sources must be arranged vertically, making it difficult to control the temperature inside the reaction vessel.As a result, the temperature of the reaction gas between the substrates placed above and below becomes uneven, and the temperature between the substrates increases. A problem arises in that it becomes difficult to form a uniform film thickness between the layers.

Furthermore, in the prior art, the gas introduced from the upper end of the reaction vessel is discharged from the outlet at the lower end of the reaction vessel while flowing in a direction perpendicular to the substrate mounting surface (in the axial direction).
The gas flow in which the raw material gas is consumed by vapor phase growth on the upper end substrate sequentially moves to the lower substrate surface.In other words, the lower the gas flow moves, the thinner the raw material gas concentration becomes, and the film between the substrates becomes thinner. Variations in thickness are likely to occur.

Furthermore, inversely proportional to the reduction in the raw material gas concentration, the concentration of by-products produced by vapor phase growth increases, and the gas temperature also increases, resulting in a difference in impurity concentration in the gas flow direction, in other words, variations in resistivity. is also likely to occur.

In view of the drawbacks of the prior art, an object of the present invention is to provide a method and apparatus for producing a vertical thin film, which can significantly increase the number of substrates to be processed and can accommodate larger diameters.

Another object of the present invention is to provide a method and apparatus for producing a thin film that can make the film thickness and quality uniform between substrates and for each substrate, achieve the above-mentioned characteristics, and eliminate variations in resistivity. It is about providing.

Furthermore, another object of the present invention is to provide a method and apparatus for producing a thin film that facilitates handling operations during attachment/detachment and that does not cause contamination of the substrate or decrease in yield during the attachment/detachment. It is about providing.

"Means for Solving the Problem" The first invention utilizes a chemical reaction between reactive gases or a chemical reaction between a reactive gas and a substrate in an activated space to achieve the technical problem. For example, in a thin film production method in which a thin film is produced on a semiconductor wafer or other substrate based on the CVD (chemical vapor deposition) method or the ore oxide method, A group of substrates stacked vertically and vertically is placed in the space, and a reaction gas is caused to flow from the periphery of the space to the center or in the opposite direction, preferably at least on a single substrate. We propose a thin film production method in which the essential component is that the reaction gas that has passed through the reaction zone on the surface is discharged outside the active space without passing through the reaction zone on the surface of another substrate.

In this case, the active space includes both a dome-shaped closed space and a tubular open space, and the activation means include heating means under pressurized, normal pressure or reduced pressure, plasma, light, P.
This includes both hoto and the like.

Furthermore, in order to arrange the substrates in a stacked manner, it is also possible to arrange them in a stacked manner using a substrate support jig made into a cassette as shown in the example below, or by using branch-like supports extending radially from the central axis in the reactor. A member may be provided and the substrates may be stacked and arranged on the support member.

Note that the reaction gas does not refer only to the raw material gas or doping gas, but refers to a carrier gas mixed with these gases.

In addition, in the second invention, a preferred configuration for embodying this generation method is shown, and its essential components are as follows:
For example, thermal CVD, plasma CVD, photo-CVD, Photo-CVD, MOC under pressure, normal pressure or reduced pressure.
In a thin film production device with a so-called vertical structure, which is applied to VD, oxidation diffusion furnaces, etc. that form oxide films on substrates, ■Multiple sets of substrates stacked vertically in vertical rows are placed in the space inside the container around the axis of the container. Note that the reaction vessel includes not only a dome-shaped reaction vessel but also a tubular reaction vessel.

■A reactive gas discharge means is provided at least on the center side of the container and/or on the peripheral side of the container.■When the reactive gas dispersed in the container from the introduction pipe passes through the reaction zone on the surface of the laminated substrate. In other words, the flow direction of the reactant gas is directed from the center of the container to the periphery, or from the periphery to the center of the container. We propose a thin film generation device as an essential component.

In a preferred embodiment of the present invention, the dispersion means and discharge means for the reaction gas are arranged at appropriate positions on the center side of the container and/or on the side of the container periphery, and the reaction gas is distributed over a single substrate. After passing through the reaction zone on the surface, it is preferable to configure the substrate so that it can be discharged to the outside of the container without passing through the reaction zone on the surface of another substrate.

The third invention uses the main parts of the second invention as main components, and aims to obtain even more uniform film distribution and resistance distribution, and the main components are: ■ Vertical stacking The arranged substrate group is located in a surrounding space spaced apart from the center of the reaction vessel by a predetermined ratio in the radial direction; The point is that it is configured to be able to rotate.

Further, the fourth invention uses the main parts of the second invention as the main components, and, like the third invention, aims to obtain even more uniform film distribution and resistance distribution, and the main components thereof are as follows. , (2) a group of substrates arranged vertically in a layer a is located in a surrounding space spaced apart from the center of the reaction vessel by a predetermined ratio in the radial direction; The point is in the composition.

"Effects of the Invention" According to the first invention, the vertically stacked substrate group is not arranged coaxially with the reaction vessel, but is placed in the surrounding space at a predetermined distance from the center of the active space in the radial direction. In order to position the group of substrates in the 3rd prior art, even if the number of substrates to be stored is increased, the length of the reaction vessel (tube) forming the active space is 172~172 mm.
174, which makes it easier to control the temperature in the active space, and as a result, uniformity of reaction gas temperature between substrates is achieved, making it easier to form a uniform film thickness between substrates. Become.

Further, according to the above technical means, since the substrates are positioned parallel to the spatial axis direction between the central part and the peripheral part of the active space, the substrates are directed from the peripheral part of the active space to the central part or in the opposite direction. By flowing the reactive gas, the reactive gas that has passed through the reaction zone on at least one substrate surface is discharged outside the active space without passing through the reaction zone on the other substrate surface.
In other words, since only raw gas can pass through the reaction zone on the substrate surface, vapor phase growth is possible with a uniform raw gas concentration, so there is a risk of variations in film thickness between substrates. Moreover, by-products generated by vapor phase growth are discharged to the outside without coming into contact with other substrates, making temperature control easier. There is no variation in resistivity, and it is easy to produce a homogeneous thin film with good uniformity and no defects in the resistivity distribution and curtain pressure distribution for each substrate, and as a result, it is possible to cope with larger diameter substrates. , it becomes easier to produce an epitaxial film, which is even more difficult to produce. Furthermore, this effect can be applied not only to the formation of epitaxial films but also to the formation of single-crystal or non-single-crystal thin films by chemical reactions between substrate components and gas-phase reactive gases, when surface reactions are not rate-determining or are not rate-determining. Even if there is, a similar effect will be noticeable if by-products are produced.

In addition, since the board groups are arranged in the same arrangement direction around the central part, the board arrangement is simplified, and since each board is arranged in parallel at a predetermined interval, mounting/detachment operations are easy. As a result, automatic handling becomes easier, and the reaction gas can be passed through the reaction zone on the substrate surface in a laminar flow state, further improving the uniformity of the film quality for each substrate.

Furthermore, in the second invention, in addition to the effects of the first invention described above, by using a cassette-shaped board support jig, the board can be replaced for each support jig, and mounting/detachment can be carried out more efficiently. In addition, as shown in the example below, by mounting the board on the support member via a flat support plate, there is no need to contact some kind of transport member with the board surface when mounting/demounting the board. There is no possibility of contaminating the substrate or reducing yield.

Furthermore, in a preferred embodiment of the present invention, when the substrates laminated on the support member are arranged with a slight inclination toward the outside of the container, a stopper is provided on the support member to ensure that the sea urchin/\ is kept constant during the reaction. held in position.

In addition, if the Uni/X is stationary or revolving (not including rotation) in the reaction space, the wafer can be tilted up to 20".
It is possible to make the flow of the reaction gas smooth by selecting the amount within the range.

Furthermore, in the third and fourth inventions, in addition to the effects of the first invention, since the substrate group revolves, revolves, and rotates or rotates on its own axis along the flow of the reaction gas, waves can be created on the individual substrates. By eliminating the directionality of the gas flow and achieving uniform temperature distribution on the wafer, in particular, it is possible to achieve uniform thickness of the CVD grown layer, or uniform impurity concentration distribution, in other words, uniform resistance distribution.

In this case, any means for revolving/rotating the substrate group needs to be formed close to the reaction space so as not to come into contact with the reaction gas, and as a result, the growth layer caused by the adhesion of particles, tar, etc. defects can be prevented.

Furthermore, according to a preferred embodiment of the third invention, the substrate group is moved between the gas introduction pipe that enters the reaction container along the axis of the reaction container and the reaction container while rotating relatively around the reaction container axis. By configuring it to revolve, it becomes a wheel in which the gas flow direction changes in the circumferential direction in addition to the revolution or rotation of the substrate group, so that the above effect can be achieved even more effectively.

It has various effects such as

"Embodiments" Hereinafter, preferred embodiments of the present invention will be described in detail by way of example with reference to the drawings. However, unless otherwise specified, the dimensions, materials, shapes, and relative arrangements of the components described in this example are not intended to limit the scope of this invention, but are merely illustrative examples. It's nothing more than that.

1 to 3 show a hot wall type reduced pressure CVD apparatus according to the first and second embodiments of the invention.

This apparatus includes a base 1 supporting a gas introduction pipe 4 and having an exhaust port 6, and a reactor comprising an inner container 2 and an outer container 3 mounted on the base 1 via a sealing means 7. It consists of a substrate support jig 5 housed in the inner container 2, and these members are all made of quartz glass material.

The base 1 is provided with a cylindrical inner container mounting base 11 on its upper surface, and has an inner container mounting base 11 that extends through the center of the base 11.
An exhaust port 6 connected to a suction pump 12 is provided, and a gas introduction pipe 5 extending along the axis to a position above the reaction chamber in the inner vessel 2 is disposed and supported within the exhaust port θ.

Then, the distal end of the gas introduction tube 4 is bulged into a spherical shape, and a large number of through holes 13a are formed on the circumferential surface thereof to form a gas introduction port 13. The dispersed reaction gas is configured to be guided radially along the inner wall of the inner container 2 toward the periphery of the reaction chamber IA.

Further, a mirror plate-like guide plate 9 is attached directly below the gas inlet 13. The guide plate 9 has a diameter that is approximately the same or slightly larger than the space in which the substrate support jig 5 is located below the guide plate 9. By bending the peripheral end vertically downward, the reaction gas introduced into the reaction chamber IA from the gas inlet 13 is directed along the guide plate 9 to the peripheral edge side of the reaction chamber IA. After being dispersed, the reactant gas is configured to flow vertically downward along the inner wall of the inner container 2 at its terminal position.

The guide plate 9 may be made of quartz glass material, but by forming it with high-purity graphite that can absorb heat (it is better to coat the surface with SiC), the radiant heat from the heat source IO can be applied to the guide plate θ itself. As a result, heat uniformity within the reaction chamber IA is further achieved.

It is also preferable to select a heat insulating material other than graphite for the guide plate 9, which does not contaminate the reaction chamber.

On the other hand, a heat insulating material such as quartz wool 14 is sealed inside the mounting base 11 to prevent the heat in the reaction chamber IA from escaping to the base 1 side.

The outer container 3 is formed into a cylindrical dome shape using a transparent quartz glass material with low absorption of infrared rays, and an infrared lamp or other radiant heat source 1 is mounted on the outer periphery at a predetermined distance from the base end.
Surrounds 0. Note that the outer container 3 is not limited to only a transparent quartz glass material that suppresses infrared absorption, but can also be made of a translucent quartz glass material containing air bubbles.
This scatters infrared rays after passing through the outer container 3, further improving thermal uniformity.

Further, the base end side of the outer container 3 is hermetically sealed by a ring-shaped pressure-resistant sealing means 7 mounted on the base 1.

The inner container 2 is also formed into a cylindrical dome shape similar to the outer container 3 using a quartz glass material or a silicone material with good infrared absorbing properties.

The proximal end side thereof is made to be ventilated with the compartment, and it is placed tightly on the mounting base 11 to the extent that dust and the like cannot enter.

The inner container 2 is also airtightly sealed in the same manner as the outer container 3, so that the purge gas is contained in the compartment 2A surrounded by the inner container 2 and the outer container 3, and the reaction gas is contained in the reaction chamber IA. It may be configured as follows.

As shown in FIG. 3, the substrate support jig 5 has a three-wood bar-shaped keel member 18 fixed upright between a bottom plate 15 and a top plate 16 which are vertically arranged horizontally after being exposed for a predetermined period of time. A large number of support grooves 19 are carved on the inner peripheral surface of the member, and 20 to several dozen semiconductor wafers 20 supported by a disk-shaped susceptor 21 are stacked along a plane substantially perpendicular to the axis. and configure it so that it can be placed.

In order to facilitate handling operations, the support jig 5 has the keel member 18 disposed to one side toward the center of the container, and the susceptor 21 that supports the wafer 20 from a lateral position on the circumferential surface of the container 2. It is configured to be able to be loaded/unloaded and is slightly tilted so that the wafer can be stably maintained in its position during the reaction. In addition, if the wafer holder does not rotate, the reaction gas can flow smoothly by tilting the wafer holder downward by a maximum of 20 inches on the axis of the reaction vessel perpendicular to the axis of the reaction vessel, which is perpendicular to the axis of the reaction vessel, from the viewpoint of the overall gas flow balance. I can do it.

Two to four supporting jigs 5 are placed at symmetrical positions in the reaction chamber IA in the surrounding space with the exhaust port 6 in between.

The susceptor 21 that supports the wafer 20 may be made of quartz glass, but the copying heat from the heat source 10 is transferred to the susceptor 2 by a wheel made of heat-absorbing graphite.
1 itself, and the temperature uniformity of the wafer 20 is further achieved.

Next, the operation of this embodiment will be explained. First, the inside of the reaction chamber IA is replaced with purge gas, and then, while flowing H2 gas into the reaction chamber IA from the gas gas introduction pipe 5, the insides of the reaction chamber IA and the compartment 2A are Placed under reduced pressure of ~10 torr, the inner container 2 is heated via the outer container 3 by a radiant heat source IO placed around the outer periphery of the outer container 3, and the inside of the reaction chamber IA is heated to a predetermined temperature (1100 to 1200°C). After maintaining the temperature, a reaction gas in which a raw material gas and a doping gas are mixed in a carrier gas (H2 gas) at a predetermined ratio is introduced into the reaction chamber IA through the gas introduction pipe 5.

The reaction gas introduced inward into the reaction chamber IA from the gas introduction port 13 located at the tip of the gas introduction pipe 5 is dispersed to the edge of the reaction chamber IAA along the guide plate 8 and is made into a laminar flow. At the end position, the reaction gas flows vertically downward along the inner wall of the inner container 2 in a curtain shape, and from the wafer stacking interval position 22 facing the container periphery, it sequentially flows into the reaction zone on the surface of each wafer 20, forming a laminar flow. After pneumatic growth is performed using the unreacted raw gas, the reaction gas that has passed through the reaction zone on the surface of a single wafer 20 is exhausted from the central space without passing through the reaction zone on the surface of other wafers 20. It is discharged out of the container through the port 6.

According to this embodiment, since the reaction gas flows vertically downward in a curtain-like manner along the inner wall surface of the cylindrical inner container 2, unreacted raw gas can be sequentially supplied to the wafer 20 located below. However, part of the reaction gas that has passed through the reaction zone on the surface of the wafer 20 located above and remains in the central space may re-enter the reaction zone on the surface of the wafer 20 located below.

FIG. 4 eliminates this drawback, and its structure will be explained focusing on the differences from the previous embodiment.

A cylindrical tube 30 that reaches the lower surface of the guide plate 9 is connected to the extension line of the exhaust port 8 at the center of the reaction chamber IAA, and the wafer stacking interval position 22 of the support jig 5 on the circumferential surface of the cylindrical tube 30 is connected. A through hole 31 is bored at a location corresponding to.

In addition, a large number of small holes 33 are bored in an annular manner in the circumferential direction at positions corresponding to the peripheral edge of the inner container on the inner container mounting base ll. The gap width 34 is connected to the suction pump 3B via a discharge pipe 35.

According to this embodiment, for example, the suction force from the exhaust port 8 and the suction force from the discharge pipe 35 communicating with the small hole 33 are
By distributing the reaction gas at a predetermined ratio, the reaction gas is introduced into the reaction chamber IA from the gas inlet 13 and dispersed along the guide plate 9 to the edge of the reaction chamber IAA. The raw gas cools down reliably in a curtain-like manner along the inner wall of the vessel 2, and laminarized and unreacted raw gas flows reliably into the sea urchin 8 stacking interval position 22 located below, as well as the reaction on the surface of each wafer 20. The reaction gas that has passed through the area is reliably discharged to the outside of the container through the through hole 31 bored on the circumferential surface of the cylindrical tube 30, and part of the gas that has reacted on the surface of the wafer 20 is transferred to the reaction area on the surface of the wafer 20 located below. The fear of re-entering can be reliably eliminated.

Furthermore, it passes through the reaction zone on the surface of the wafer 20 located at an upper position,
Another way to prevent some of the gas stagnant in the central space from passing through the gap between the wafer supports and affecting the wafer surface below is to install multiple exhaust pipes in parallel or in a concentric configuration. It is also possible to provide an exhaust hole at the upper end for each wafer or for each group of adjacent wafers, and to exhaust a fixed amount of exhaust gas flt from each wafer.

FIG. 5 shows a reduced pressure CVD apparatus according to an embodiment of the third invention, and the differences from the previous embodiment will be mainly explained. A pedestal 40, a cylindrical tube 42 which is rotatably supported on the center axis of the pedestal 40 via an annular seal 41 and has the guide plate 9 connected to its tip, and Fixedly installed,
An inner container mounting table 43 rotates following the rotation of the cylindrical tube 42, and an inner container mounting table 43 is rotatably supported via a support shaft 44 on the inner container mounting table 43, which is spaced a predetermined distance from the cylindrical tube 42 in the radial direction. It consists of a jig mounting base 45.

On the circumferential surface of the cylindrical tube 42 located above the inner container mounting table 43, a through hole 31 is bored at a position corresponding to the wafer stacking interval position 22 of the support jig 5, as in the second embodiment. There is.

Further, a motor gear 4 is located below the base 40 of the cylindrical tube 42.
A first gear 47 meshing with the inner container 6 is fitted in a pivoted manner, and a center hole 49a through which the cylindrical tube 42 passes is provided in the compartment sandwiched between the base 40 and the inner container mounting table 43. A second plate is fixed on the base 4θ concentrically with the axis of the cylindrical tube 42 through the
The second gear 49 has a gear 49 attached to the lower end of a support shaft 44 that is pivotally supported on the inner container mounting base 43.
It meshes with 8.

The aforementioned gas introduction tube 5 is inserted on the axis of the cylindrical tube 42, and the gas introduction port 13 provided at the tip of the introduction tube 5 is inserted through a hole 51 bored in the center of the guide plate 9. At the same time, the gas introduction pipe 5 is fixedly supported at a predetermined position by a support means (not shown) without rotating following the rotation of the cylinder v42.

According to this embodiment, by the rotation of the motor 50,
An inner container mounting base 43 and an inner container 2 mounted on the mounting base 43 via the motor gear 48 - the first gear 47 - the cylindrical pipe 42
rotates, causing the substrate support jig 5 to revolve around the container axis, and following the rotation of the substrate support jig 5,
While the spindle 44 concentrically moves (revolutions) around the second gear 48 fixed on the base 40, the second gear 43
The gear 48 meshing with the substrate rotates as a result of this, and the substrate support jig 5 rotates following the revolution via the gear 48, the support shaft 44, and the jig mounting base 45.

On the other hand, since the gas introduction pipe 5 is fixed at a predetermined position without rotating following the rotation of the cylindrical pipe 42, the gas flow direction changes relatively in the circumferential direction due to the rotation of the inner container 2. However, the effects of the present invention described above can be smoothly achieved.

In this embodiment, since the substrates 20 stacked and supported by the substrate support jig 5 rotate, it is not necessary to tilt the substrates slightly toward the center of the container as in the previous embodiments, but to tilt the substrates substantially horizontally. Just maintain the condition.

FIG. 7 shows a reduced pressure CVD apparatus according to an embodiment of the fourth invention, and the differences from the embodiment of the third invention will be mainly explained.
The inner container mounting stand 53 is fixed on the base 40 by a support rod 58, while the annular seals 41 and 53 are arranged between the circular parts 42.
It is inserted along the axis via a, and the base 40 and the inner container j! A relay gear 59 is connected in a compartment sandwiched between the mounting bases 53, and the relay gear 53 is meshed with the gear 48 on the jig mounting base 55 side.

According to this configuration, the relay gear 59 is driven to rotate by the rotation of the cylindrical tube 42, and the rotation of the relay gear 59 causes the gear 4 to rotate.
The jig mounting base 55 and the substrate support jig 5 rotate through the support shaft 44, causing the substrate groups to rotate respectively. still,
At this time, the inner container mounting stand 53 is attached to the base 40 by the support rod 56.
Since it is fixed above, it does not revolve, and only the substrate group rotates via the substrate support jig 5.

As described above, in each of the embodiments described above, the effects of the respective inventions described above are smoothly achieved, but in addition to these effects, these embodiments also have the following effects.

That is, since all of the above embodiments are formed of a double container consisting of an inner container 2 and an outer container 3, and the sealing means 7 is only for the outer container 3, the internal pressures of the inner container 2 and the outer container 3 are set to be almost the same. As long as the outer container 3, which hardly needs to be replaced, is strong, the inner container 2 can be used even with a thin, irregularly shaped container.As a result, manufacturing costs are reduced and the shape of the inner container 2 can be freely set. Therefore, it is also possible to set the shape to be convenient for, for example, allowing gas to flow uniformly over the surface of the wafer 20.

Furthermore, since the wafers 20 are arranged roughly along the cross section of the inner container 2, the heat uniformity within the same wafer 20 is good and defects such as slip lines are less likely to occur.

Moreover, since the wafer 20 is arranged parallel to the gas flow direction at an angle of several degrees upward, the gas easily enters the wafer stacking interval position 2257, and the gas flows over the wafer 20 surface roughly toward the center of the furnace tube. In addition, in each of the above embodiments, the surface of the substrate 20 (the side on which the thin layer is grown) is placed on the upper side. It is also possible to arrange this so that it is on the lower side. In this case, it is necessary to hold the wafer with as few contact points as possible around the periphery of the substrate, and to provide a suitable cover to prevent thin film growth on the back side, which often occurs when the wafer surface is placed on the upper side. This results in the effect that the reaction gas or the dilution gas of the reaction gas, which causes protruding crystal defects, prevents fine particles from entering and landing on the wafer surface.

[Brief explanation of the drawing]

1 and 2 are embodiments of the first and second inventions. FIG. 4 is a front sectional view showing a modification of the above embodiment. FIG. 5 is a sectional view showing a reduced pressure CVD apparatus according to an embodiment of the third invention. FIG. 7 is a sectional view showing a low pressure CVD device according to an embodiment of the fourth invention. FIG. 3 is a schematic perspective view showing a substrate support jig used in these examples. FIG. 6 is a front sectional view showing the prior art. Patent applicant: Shin-Etsu Semiconductor Co., Ltd. Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 7 Figure 6

Claims (1)

[Claims] 1) A thin film production method in which a thin film is produced on a substrate by mutual chemical reaction of reactive gases in an activated space or chemical reaction with a semiconductor wafer or other substrate,
A group of substrates stacked vertically and vertically in a vertically stacked manner is placed in a surrounding space radially separated by a predetermined distance from the center of the space, and a reactive gas is directed from the periphery of the space to the center or the opposite direction. 2) The reaction gas that has passed through the reaction zone on the surface of at least one substrate is discharged outside the active space without passing through the reaction zones on the surfaces of other substrates. 3) A thin film production method for producing thin films on the surfaces of a plurality of substrates using a reaction vessel having an axis in the vertical direction. A plurality of sets of substrates stacked in layers are arranged in the inner space of the container around the axis of the container, and a reactive gas exhaust means is provided at least on the center side of the container and/or on the side of the container periphery, so that the surface of the stacked substrates is A thin film production device characterized in that the reaction gas passing through the reaction zone flows approximately along the radial direction of the container. 4) The substrate group stacked vertically in vertical rows is mounted on a cassette-shaped substrate support jig. 5) The dispersion means and discharge means for the reaction gas are disposed at appropriate positions on the side of the center part of the container and/or on the side of the peripheral part of the container, and
The thin film according to claim 3 or 4, wherein the reaction gas is configured to be able to be discharged outside the container after passing through a reaction zone on the surface of a single substrate without passing through a reaction zone on the surface of another substrate. 6) In a thin film production device that produces thin films on the surfaces of a plurality of substrates using a reaction vessel having an axis in the vertical direction, a group of substrates stacked vertically in vertical rows is placed in the reaction vessel. Located in a surrounding space a predetermined distance away from the center in the radial direction,
7) A thin film production device characterized in that the substrate group is configured to be able to revolve around the container axis 7) A thin film generating device characterized in that the substrate group is configured to be able to revolve around the container axis and the substrate group itself can rotate Range 6th
8) Thin film production device described in section 8) The device is configured such that the substrate group is revolved between the gas introduction pipe that enters the reaction container along the axis of the reaction container and the reaction container while rotating relative to each other about the container axis. 9) The device for producing a thin film according to claim 6 or 7, wherein both the means for revolving the substrate group and the means for rotating the substrate group are formed close to the reaction space so as not to come into contact with the reaction gas. A thin film production device according to any one of claims 6 to 8. 10) In a thin film production device that uses a reaction vessel having an axis in the vertical direction to produce thin films on the surfaces of multiple substrates, a group of substrates stacked vertically in columns are separated by a predetermined distance in the radial direction from the center of the reaction vessel. A thin film production device, characterized in that the substrate group is located in a surrounding space and is configured to be able to rotate on its own axis about the substrate axis.