JPS63300512A - Chemical vapor deposition apparatus - Google Patents
Chemical vapor deposition apparatusInfo
- Publication number
- JPS63300512A JPS63300512A JP13583787A JP13583787A JPS63300512A JP S63300512 A JPS63300512 A JP S63300512A JP 13583787 A JP13583787 A JP 13583787A JP 13583787 A JP13583787 A JP 13583787A JP S63300512 A JPS63300512 A JP S63300512A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- substrate
- vapor phase
- tube axis
- reaction chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005229 chemical vapour deposition Methods 0.000 title 1
- 239000007789 gas Substances 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 239000012495 reaction gas Substances 0.000 claims abstract description 20
- 239000010409 thin film Substances 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims description 24
- 238000001947 vapour-phase growth Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims 1
- 230000006698 induction Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 19
- 239000010408 film Substances 0.000 abstract description 19
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 17
- 238000004518 low pressure chemical vapour deposition Methods 0.000 abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 239000010453 quartz Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、気相成長装置に係り、特に、多数のウェハに
対して一度に均一な処理を行なうことのできる薄膜形成
装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a vapor phase growth apparatus, and particularly to a thin film forming apparatus that can uniformly process a large number of wafers at once.
［従来技術およびその問題点］
半導体技術の進歩に伴い、素子の微細化および高集積化
は進む一方である。[Prior art and its problems] With the progress of semiconductor technology, the miniaturization and higher integration of elements are progressing.
従って、薄膜の形成に際しては、高度な均一性を得るこ
とが最も用要な課題となっている。Therefore, when forming thin films, the most important issue is to obtain a high degree of uniformity.
例えば、減圧ＣＶＤ法を用いた薄膜形成装置では、第６
図および第７図に示す如く、横型反応管を用いた装置が
主流となっている。For example, in a thin film forming apparatus using the low pressure CVD method, the sixth
As shown in FIG. 7 and FIG. 7, devices using horizontal reaction tubes have become mainstream.
第６図に示した減圧ＣＶＤ装置は、横型反応管１００の
長手方向に沿って石英ボート１０１を配設し、このボー
ト上にウェハ１０２を垂直に立てるように所定の間隔で
設置し、反応ガスを供給することによりＣＶＤ薄膜を形
成するものである。The reduced pressure CVD apparatus shown in FIG. 6 has a quartz boat 101 arranged along the longitudinal direction of a horizontal reaction tube 100, and wafers 102 are placed vertically on the boat at predetermined intervals. A CVD thin film is formed by supplying .
この装置では、反応ガスの供給に際し、上流側に石英円
筒管からなるバッファー１０３を設置し、反応ガスの供
給密度のムラを低減するようにしている。In this device, when supplying the reaction gas, a buffer 103 made of a cylindrical quartz tube is installed on the upstream side to reduce unevenness in the supply density of the reaction gas.
また、第７図に示した減圧ＣＶＤ装置では、横型反応管
２００内に石英多孔管２０１を配設し、この石英多孔管
の孔りから反応ガスを供給するようにし、各ウェハー２
０２に対して、反応ガスがより均一に供給せしめられる
ようにしている。Furthermore, in the low pressure CVD apparatus shown in FIG. 7, a quartz porous tube 201 is disposed inside the horizontal reaction tube 200, and a reaction gas is supplied from the holes of this quartz porous tube.
02, the reaction gas is supplied more uniformly.
２０３はバッファー、２０４はボート、２０５は石英ホ
ルダーである。かかる構造により、第６図に示した構造
のものよりは均一なＣＶＤ膜が形成される。203 is a buffer, 204 is a boat, and 205 is a quartz holder. With this structure, a more uniform CVD film is formed than with the structure shown in FIG.
しかし、依然として充分な均一性は得られず、更に均一
性を高めるべく、第８図に示す如く反応管３００を縦型
にし、反応ガスの流れに垂直となるようにウェハ３０２
を支持するロッド３０１が回転可能なように構成したも
のも提案されている。However, sufficient uniformity was still not obtained, and in order to further improve the uniformity, the reaction tube 300 was made vertical as shown in FIG.
There has also been proposed a structure in which the rod 301 supporting the is rotatable.
この装置では、各ウェハに対する反応ガスの供給密度は
均一化されるが、反応ガスの流れ方向での膜厚のばらつ
きを２％以下に押さえるのは困難であり、またウェハ一
枚をとってみても、やはりばらつきが大きく、ウェハの
大型化に伴い、各ウェハ面上でのばらつきが深刻な問題
となっている。With this device, the supply density of the reaction gas to each wafer is made uniform, but it is difficult to suppress the variation in film thickness in the flow direction of the reaction gas to less than 2%, and it is However, as wafers become larger, variations on each wafer surface are becoming a serious problem.
また、ランニングコストについても充分ではなかった。Furthermore, running costs were not sufficient.
ランニングコストの点からみると、−回当りの処理枚数
を増大せしめると共に、クリーンルーム内に設置される
ものである故、装置の床面積を少なくするのが９１まし
い。From the point of view of running costs, it is desirable to increase the number of sheets processed per cycle and to reduce the floor space of the apparatus since it is installed in a clean room.
また、エピタキシャル成長装置としては第９図に示す如
く、縦型の反応炉４００内に配設されたバレル型のサセ
プタ４０１の周りにウェハ４０２に支持せしめハロゲン
ランプ等の加熱源４０３によって外側からウェハを加熱
するものがあるが、この場合も処理可能な枚数に制限が
ありまた、反応炉の管壁が不透明化するという問題があ
った。As shown in FIG. 9, the epitaxial growth apparatus is such that a wafer 402 is supported around a barrel-shaped susceptor 401 disposed in a vertical reactor 400, and the wafer is heated from the outside by a heating source 403 such as a halogen lamp. There are some methods that require heating, but in this case as well, there is a limit to the number of sheets that can be processed, and there are also problems in that the tube walls of the reactor become opaque.
本発明は、前記実情に鑑みてなされたたちので、一度に
多数のウェハに対し均一性の高い薄膜形成を行なうこと
のできる縦型の気Ｉｌｌ成長装置を提供することを目的
とする。The present invention has been made in view of the above-mentioned circumstances, and an object of the present invention is to provide a vertical vapor deposition apparatus capable of forming highly uniform thin films on a large number of wafers at once.
〔問題点を解決するための手段および作用〕そこで本発
明の気相成長装置では、管軸が鉛直に設置せしめられる
円筒状の反応室内に、管軸に対して垂直となるように複
数の基板を配列し、管軸に平行な軸のまわりにこれら度
数の基板を回転せしめると共に、反応ガスの流れが基板
の配列領域において基板に平行となるように反応ガスを
供給排出せしむべく基板の配列方向に沿って配設せしめ
られたガス供給口およびガス排出口を具備するようにし
ている。[Means and effects for solving the problem] Therefore, in the vapor phase growth apparatus of the present invention, a plurality of substrates are arranged perpendicularly to the tube axis in a cylindrical reaction chamber in which the tube axis is vertically installed. The substrates are arranged so as to rotate the substrates of these degrees around an axis parallel to the tube axis, and to supply and discharge the reaction gas so that the flow of the reaction gas is parallel to the substrates in the region where the substrates are arranged. A gas supply port and a gas discharge port are provided along the direction.
−に記構成により、管軸に沿って所定の間隔で基板を配
列すればよいため、小さなスペースで基板の処理枚数を
増大せしめることができる。- With the configuration described above, it is sufficient to arrange the substrates at predetermined intervals along the tube axis, so the number of substrates to be processed can be increased in a small space.
また、反応ガスの流れが基板、に対して平行となるよう
に構成されており、かつこの流れに対して垂直な軸の周
りで基板を回転するようにしているため、均一な薄膜の
形成が可能となる。In addition, since the flow of the reaction gas is configured to be parallel to the substrate and the substrate is rotated around an axis perpendicular to this flow, it is possible to form a uniform thin film. It becomes possible.
このように基板１枚あたりの処理時間の短縮化をはかる
ことができ、低コストとなると共に膜特性の均一な薄膜
形成が可能となる。In this way, the processing time per substrate can be shortened, the cost can be reduced, and a thin film with uniform film characteristics can be formed.
また本発明の気相成長装置では、管軸が鉛直となるよう
に設置せしめられてなる筒状の反応室内に、管軸に対し
て平行となるように１夏数の基板を配列すると共に、反
応ガスの流れが基板の配列領域において基板と平行とな
るように反応ガスを供給排出せしむべく、ガス供給口お
よびガス排出口を具備するようにしている。In addition, in the vapor phase growth apparatus of the present invention, a number of substrates are arranged parallel to the tube axis in a cylindrical reaction chamber installed with the tube axis vertical, and A gas supply port and a gas discharge port are provided to supply and discharge the reaction gas so that the flow of the reaction gas is parallel to the substrates in the substrate arrangement region.
かかる装置においても、低コストで膜特性の均一な形成
が可能となる。Also in such an apparatus, it is possible to form a film with uniform properties at low cost.
［実施例］
以下、本発明の実施例について、図面を参照しつつ詳細
に説明する。[Example] Hereinafter, an example of the present invention will be described in detail with reference to the drawings.
第１図は、本発明の第１の実施例の減圧ＣＶＤ装置を示
す図である。FIG. 1 is a diagram showing a reduced pressure CVD apparatus according to a first embodiment of the present invention.
この減圧ＣＶＤ装置は、周囲をヒータ１によって所定の
温度に加熱せしめられてなる縦型円筒状の反応炉２とこ
の反応炉の管軸に沿って配設せしめられ、管壁に所定の
間隔で配列せしめられた多数個のガス供給口ｈ１を具備
してなるガス供給管３と、反応炉２と同軸的に配設せし
められ管壁に多数のガス排出口ｈ２を有する円筒状の内
筒４と、この内筒とガス供給管３との間にできた成膜空
間５内に前記反応炉の上面に配設せしめられた回転支持
板６から垂下せしめられ、管軸に対して垂直に所定の間
隔でウェハ７を支持する３本の回転ロッド８ａ、８ｂ、
８ｃとから構成されており、回転支持板６の回転によっ
て３本の回転ロッドは、管軸のまわりで公転すると共に
、回転ロッド自身も自転しりつウェハを支持し、このウ
ェハ上に減圧ＣＶＤ法により薄膜を形成するものである
。This reduced-pressure CVD apparatus includes a vertical cylindrical reactor 2 whose surroundings are heated to a predetermined temperature by a heater 1, and a vertical cylindrical reactor 2 that is disposed along the tube axis of the reactor, and is installed at predetermined intervals on the tube wall. A gas supply pipe 3 comprising a large number of arranged gas supply ports h1, and a cylindrical inner tube 4 disposed coaxially with the reactor 2 and having a large number of gas discharge ports h2 on the pipe wall. In the film forming space 5 formed between this inner cylinder and the gas supply pipe 3, a rotary support plate 6 is suspended from a rotary support plate 6 disposed on the upper surface of the reactor, and is placed perpendicularly to the tube axis at a predetermined position. Three rotating rods 8a, 8b that support the wafer 7 at intervals of
8c, the three rotating rods revolve around the tube axis by the rotation of the rotating support plate 6, and the rotating rods themselves also support the rotating wafer, and the low pressure CVD method is applied to the wafer. This method forms a thin film.
次にこの減圧ＣＶＤ装置によって、シリコンウェハ上に
、二酸化シリコン（ＳｉＯｚ）膜を形成する場合につい
て説明する。Next, a case will be described in which a silicon dioxide (SiOz) film is formed on a silicon wafer using this low pressure CVD apparatus.
まず、回転ロッド８ａ、８ｂ、８ｃ上にシリコンウェハ
７をセットした後、回転支持板６に該回転ロッドをとり
つけ、成膜空間５内にセットする。First, the silicon wafer 7 is set on the rotating rods 8a, 8b, and 8c, and then the rotating rods are attached to the rotating support plate 6 and set in the film forming space 5.
この後、反応炉内２を真空排気し、１０ ’ Ｔ 。After this, the inside of the reactor 2 was evacuated to 10'T.
ｒｒ程反で安定化する。Stabilizes at rr.
そして、ヒータ１を作動せしめ反応炉内の温度が３５０
〜４５０℃に安定すると、ガス供給管３からシラン（Ｓ
ｉＨ＋）と酸素（０２）の混合ガスの供給を行ない、ウ
ェハ上に５ｉ０２膜を形成する。Then, heater 1 is activated and the temperature inside the reactor is 350.
When the temperature stabilizes at ~450°C, silane (S) is supplied from the gas supply pipe 3.
A mixed gas of iH+) and oxygen (02) is supplied to form a 5i02 film on the wafer.
このようにして形成された５ｉ０２膜は極めて均一性が
高く、優れた膜質を得ることができた。The 5i02 film thus formed had extremely high uniformity and excellent film quality.
また、第１図からも明らかなように反応炉の容積に対し
て１回で処理可能な枚数が、極めて高い。Furthermore, as is clear from FIG. 1, the number of sheets that can be processed at one time is extremely high relative to the volume of the reactor.
なお、この装置では、反応炉の中央に設けられたガス供
給口から、反応炉の内側に設けられたガス排出口に向け
てガス流を形成しているが、逆に、内筒に設けられた孔
等、外側方向からガスを供給し、内方から排出するよう
にしてもよい。In addition, in this device, a gas flow is formed from the gas supply port provided in the center of the reactor to the gas discharge port provided inside the reactor. The gas may be supplied from the outside, such as through a hole, and exhausted from the inside.
また、回転ロッドは自転すると共に管軸のまわりを公転
するように構成したが、自転のみまたは公転のみでもよ
い。更に回転ロッドは３本に限定されることなく、１本
または２本または４本以上でもよい。Further, although the rotating rod is configured to rotate on its own axis and revolve around the tube axis, it may rotate only on its axis or only revolve around its axis. Furthermore, the number of rotating rods is not limited to three, and may be one, two, or four or more.
更に、実施例では、減圧ＣＶＤ装置について説明したが
、減圧ＣＶＤに限定されることなく、常圧ＣＶＤにも適
応可能であり、更には、エピタキシャル成長装置等、他
の気相成長装置にも適用可能である。Further, in the embodiments, a low pressure CVD apparatus has been described, but the present invention is not limited to low pressure CVD, but can also be applied to normal pressure CVD, and can also be applied to other vapor phase growth apparatuses such as epitaxial growth apparatuses. It is.
第２図は、第２の実施例としてエピタキシャル成長装置
の１例を示す図である。FIG. 2 is a diagram showing an example of an epitaxial growth apparatus as a second embodiment.
このエピタキシャル成長装置は、概要的には第１図に示
した第１の実施例の減圧ＣＶＤ装置と同様であるが、周
囲のヒータ１に代えて、高周波コイル１１を配設すると
共に、内筒４を表面がシリコンカーバイド（Ｓ ｉ Ｃ
）膜で被覆せしめられたグラファイトで構成した発熱体
１４とし、この発熱体１４によってウェハを所定温度に
加熱するようにしたものである。また、ウェハの配列に
ついても第１の実施例と同様でもよいが、ここでは第３
図に示す如くウェハ上への堆積の打出を防止すべくウェ
ハが水平配置されるのを避けるため、管軸のまわりに管
軸と平行となるようにウェハを配列したボー）１８ａ、
１８ｂを上下２段に配設している。This epitaxial growth apparatus is generally similar to the low pressure CVD apparatus of the first embodiment shown in FIG. The surface is made of silicon carbide (S i C
) The heating element 14 is made of graphite coated with a film, and the heating element 14 heats the wafer to a predetermined temperature. Furthermore, the arrangement of the wafers may be the same as in the first embodiment, but here
As shown in the figure, the wafers are arranged around the tube axis parallel to the tube axis to avoid the wafers being placed horizontally to prevent the deposit from being ejected onto the wafers (18a);
18b are arranged in two stages, upper and lower.
なお、第１図に示した装置と同一部材であるものに対し
ては同一番号を付した。Note that the same numbers are given to the same members as those in the apparatus shown in FIG.
また、この装置では、回転支持板６にボート１８ａ、１
８ｂを接続しく図示せず）、ボートは管軸を中心にして
回転するように構成される。Further, in this device, the boats 18a and 1 are mounted on the rotation support plate 6.
8b (not shown), the boat is configured to rotate about the tube axis.
この装置によれば、均一で膜質の優れたエピタキシャル
成長膜を得ることかで゛きる上、１回の工程で可能な処
理枚数も大幅に増大する。According to this apparatus, not only it is possible to obtain an epitaxially grown film with uniformity and excellent film quality, but also the number of films that can be processed in one process is greatly increased.
更には、従来のエピタキシャル成長装置ではウェハを第
９図に示したように、サセプタ上に載置するように構成
されていたため、処理枚数を増大させるのが困難である
のに加え、成長炉の内壁の汚れによる処理性能の低下が
問題となっていた。Furthermore, in conventional epitaxial growth apparatuses, the wafers are placed on a susceptor as shown in FIG. Decrease in processing performance due to contamination has been a problem.
しかし、本発明の第２の実施例のエピタキシャル成長装
置では、内筒が加熱されているため、付着物は、成長炉
の内壁にはほとんど到達することなく、内筒に付着する
。従ってこの内筒を着脱可能にしておくことによって、
汚れた場合、とりはずして、化学処理等によって容易に
洗浄可能である。However, in the epitaxial growth apparatus of the second embodiment of the present invention, since the inner cylinder is heated, the deposits adhere to the inner cylinder without almost reaching the inner wall of the growth furnace. Therefore, by making this inner cylinder removable,
If it becomes dirty, it can be removed and easily cleaned by chemical treatment or the like.
なお、第２の実施例における内筒としての発熱体１４に
代えて、所定の間隔で管の同一半径上にＳｉＣ被覆せし
められた多数のグラファイト棒を配設し、これを発熱体
として用いると共にこの間隙をガス排出口として用いて
もよい。この場合、更に、ガス供給口を孔に代えてガス
供給管の管軸に平行に穿設せしめられた多数のスリット
で構成してもよい。In addition, instead of the heating element 14 as the inner tube in the second embodiment, a large number of graphite rods coated with SiC are arranged on the same radius of the tube at predetermined intervals, and these are used as the heating element. This gap may be used as a gas outlet. In this case, the gas supply port may be constructed with a large number of slits formed parallel to the tube axis of the gas supply pipe instead of holes.
次に、本発明の第３の実施例について説明する。Next, a third embodiment of the present invention will be described.
このエピタキシャル成長装置は、第４図に示す如く、周
囲に高周波加熱用の高周波コイル２１の巻回せしめられ
た円筒状の反応炉２２と、この反応炉２２の内側に反応
炉の管軸を中心として配設せしめられた多数のグラファ
イト製の円筒体からなる内筒２３と、ウェハ２７を所定
の間隔で平行に配列する石英ボート２４と、この反応炉
２２の上方には配設せしめられたガス供給口２５と、下
方に配設せしめられたガス排出口２６と、ガス供給口お
よびガス排出口の近傍に石英ボート上のウェハを囲むよ
うに相対向して配設せしめられたグラファイト製の加熱
板２８ａ、２８ｂとから構成されており、高周波コイル
に電流を流すことによって、内筒２３および加熱板２８
ａ、２８ｂを誘導加熱しつつ、ウェハに平行に反応ガス
を供給するようにしている。As shown in FIG. 4, this epitaxial growth apparatus consists of a cylindrical reactor 22 around which a high-frequency coil 21 for high-frequency heating is wound, and a cylindrical reactor 22 with a tube axis centered around the reactor tube axis inside the reactor 22. An inner cylinder 23 consisting of a large number of graphite cylinders is arranged, a quartz boat 24 in which wafers 27 are arranged in parallel at predetermined intervals, and a gas supply arranged above the reactor 22. an opening 25, a gas discharge port 26 disposed below, and graphite heating plates disposed facing each other near the gas supply port and the gas discharge port so as to surround the wafer on the quartz boat. 28a and 28b, and by passing current through the high frequency coil, the inner cylinder 23 and the heating plate 28
Reaction gas is supplied in parallel to the wafer while inductively heating the wafers a and 28b.
ここで内筒は、支持台２９に設けられた四部２９ａに着
脱自在に係合せしめられており、表面に封管物が生じた
場合には外して化学処理により清浄化すればよい。この
とき、表面をＳｉＣ等の耐処理液性の高い材料で被覆し
ておけば寿命も長い。Here, the inner cylinder is removably engaged with four parts 29a provided on the support base 29, and if a sealant occurs on the surface, it can be removed and cleaned by chemical treatment. At this time, if the surface is coated with a material having high treatment liquid resistance such as SiC, the life will be extended.
このことは加熱板２８ａ、２８ｂについても同様である
。This also applies to the heating plates 28a and 28b.
また、石英ボートは、第５図に示す如く、ウェハを支持
すべく、所定の間隔で２列に配列せしめられた凹溝３０
を有してなリウエハを互いに平行に支持するものである
。In addition, as shown in FIG. 5, the quartz boat has grooves 30 arranged in two rows at a predetermined interval to support the wafer.
The wafers are supported in parallel to each other.
かかるエピタキシャル成長装置によれば、反応炉の管壁
の汚れが防止される上、装置の小型化が可能となり、ま
た生産性が大幅に向上するため、ランニングコストの低
減が可能となる。According to such an epitaxial growth apparatus, contamination of the tube wall of the reactor is prevented, the apparatus can be downsized, and productivity is greatly improved, so running costs can be reduced.
従って、従来エピタキシャル成長層を含むウェハは含ま
ないウェハに比ベコストが２．５倍であり、これがＣＭ
ＯＳ等への使用をはばむ原因になっていたが、この装置
によれば、価格の大幅な低減が可能となる。Therefore, the cost of wafers containing conventional epitaxial growth layers is 2.5 times that of wafers that do not contain epitaxial growth layers, and this is
This has been a cause of discouraging its use in OSs, etc., but with this device, it is possible to significantly reduce the price.
なお、第３の実施例において、第２の実施例で用いた石
英ボート１８ａ （第３図）を適用すると史に均一性が
向」ニする。In addition, in the third embodiment, if the quartz boat 18a (FIG. 3) used in the second embodiment is applied, the uniformity will be improved.
（発明の効果〕
以」−説明してきたように、本発明の気相成長装置によ
れば、縦型の筒体からなる反応室内に、管軸に耐して垂
直または平行に所定の間隔で基板を配列せしめると共に
、該基板に対して反応ガスの流れが平行となるようにガ
ス供給口およびガス排出口を配設しているため、ランニ
ングコストが低減され低コストで、膜特性の均一な薄膜
形成が可能となる。(Effects of the Invention) - As explained above, according to the vapor phase growth apparatus of the present invention, in the reaction chamber consisting of a vertical cylinder, the tubes are arranged vertically or parallel to the tube axis at predetermined intervals. By arranging the substrates and arranging the gas supply port and gas discharge port so that the flow of the reaction gas is parallel to the substrates, running costs are reduced and film properties are uniform at low cost. Thin film formation becomes possible.
第１図は、本発明のＴ１１の実施例の減圧ＣＶＤ装置。
第２図は、本発明の第２の実施例のエピタキシャル成長
装置。第３図は、同装置で用いられる石英ボートを示す
図。第４図は、本発明の第３の実施例のエピタキシャル
成長装置を示す図。第５図は、同装置で用いられる石英
ボートを示す図。
第６図乃至第９図は、夫々、従来例の気相成長装置を示
す図である。
１００・・・横型反応管、１０１・・・石英ボート、】
０２・・・ウェハ、１０３・・・バッファー、２００・
・・横型反応管、２０１・・・石英多孔管、２０２・・
・ウェハ、２０３・・・バッファー、２０４・・・ボー
ト、２０５・・・石英ホルダー、３００・・・反応管、
３０１・・・ロッド、３０２・・・ウェハ、４００・・
・反応炉、４０１・・・サセプタ、４０２・・・ウェハ
、４０３・・・加熱源、 １・・・ヒータ、２・・・
反応炉、３・・・ガス供給管、４・・・内筒、５・・・
成膜空間、６・・・回転支持板、７・・・ウェハ、８
ａ 、 ８ ｂ 、 ８ ｃ−・・回転ロッド、ｈ
ｌ・・・ガス供給口、ｈ２・・・ガス排出口、１１・・
・高周波コイル、１４・・・発熱体、１８ａ、１８ｂ・
・・ボート、２１・・・高周波コイル、２２・・・反応
炉、２３・・・内ｉ（発熱体）、２４・・・石英ボート
、２５・・・ガス供給口、２６・・・ガス排出口、２７
・・・ウェハ、２８ａ、２８ｂ・・・加熱板、２９・・
・支持台、３０・・・凹溝。
第１図
第２図
第３図
第４図
第５図
第７図
第８図
第９図FIG. 1 shows a reduced pressure CVD apparatus according to an embodiment of T11 of the present invention. FIG. 2 shows an epitaxial growth apparatus according to a second embodiment of the present invention. FIG. 3 is a diagram showing a quartz boat used in the device. FIG. 4 is a diagram showing an epitaxial growth apparatus according to a third embodiment of the present invention. FIG. 5 is a diagram showing a quartz boat used in the device. FIGS. 6 to 9 are diagrams showing conventional vapor phase growth apparatuses, respectively. 100...Horizontal reaction tube, 101...Quartz boat,]
02...Wafer, 103...Buffer, 200.
...Horizontal reaction tube, 201...Quartz porous tube, 202...
・Wafer, 203...Buffer, 204...Boat, 205...Quartz holder, 300...Reaction tube,
301...Rod, 302...Wafer, 400...
- Reactor, 401... Susceptor, 402... Wafer, 403... Heat source, 1... Heater, 2...
Reactor, 3... Gas supply pipe, 4... Inner cylinder, 5...
Film forming space, 6... Rotating support plate, 7... Wafer, 8
a, 8 b, 8 c--rotating rod, h
l...Gas supply port, h2...Gas discharge port, 11...
・High frequency coil, 14... heating element, 18a, 18b・
... Boat, 21 ... High frequency coil, 22 ... Reactor, 23 ... Inner i (heating element), 24 ... Quartz boat, 25 ... Gas supply port, 26 ... Gas exhaust exit, 27
...Wafer, 28a, 28b...Heating plate, 29...
・Support stand, 30...concave groove. Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 7 Figure 8 Figure 9
Claims (7)
スを供給しつつ反応室内を加熱し、基板上に薄膜を成長
せしめる気相成長装置において、管軸が鉛直方向を向く
ように配設せしめられた円筒状の反応室と、 該反応室の近傍に配設せしめられた加熱源と、該管軸に
対して垂直となるように所定の間隔を隔して複数の基板
を支持すると共に、管軸に平行な軸のまわりに基板を回
転せしめる基板支持体と、反応ガスの流れが基板の配列
領域において基板に平行となるように反応ガスを供給排
出せしむべく基板の配列方向に沿って配設せしめられた
ガス供給口およびガス排出口とを具備したことを特徴と
する気相成長装置。(1) In a vapor phase growth apparatus in which a substrate is placed in a reaction chamber equipped with a heating source and a thin film is grown on the substrate by heating the inside of the reaction chamber while supplying a reaction gas, the tube axis is oriented vertically. A cylindrical reaction chamber is provided, a heating source is provided near the reaction chamber, and a plurality of substrates are supported at predetermined intervals perpendicular to the tube axis. In addition, there is a substrate support for rotating the substrate around an axis parallel to the tube axis, and a substrate support in the substrate arrangement direction for supplying and discharging the reaction gas so that the flow of the reaction gas is parallel to the substrates in the substrate arrangement area. 1. A vapor phase growth apparatus comprising a gas supply port and a gas discharge port arranged along the line.
しめられたガス供給管の管壁に所定の間隔で穿設せしめ
られた多数個の孔から構成されると共に、 前記ガス排出口は、反応管と同軸的に配設せしめられた
円筒体からなる内筒上に所定の間隔で前記供給口に対向
して穿設せしめられた多数個の孔から構成されているこ
とを特徴とする特許請求の範囲第（１）項記載の気相成
長装置。(2) The gas supply port is composed of a large number of holes drilled at predetermined intervals in the pipe wall of a gas supply pipe arranged along the pipe axis of the reaction chamber, and the gas It should be noted that the discharge port is composed of a number of holes that are bored at predetermined intervals on an inner cylinder made of a cylindrical body arranged coaxially with the reaction tube, facing the supply port. A vapor phase growth apparatus according to claim (1).
転板と、夫々、複数の基板を１列に配列して支持する複
数の回転ロッドとからなり、前記回転ロッドは前記回転
板の同一円周上の所定位置に支持せしめられ回転板の回
転に伴い管軸のまわりを公転せしめられると共に、回転
ロッド自体も自転するように構成したことを特徴とする
特許請求の範囲第（２）項記載の気相成長装置。(3) The substrate support body includes a rotating plate that rotates around the tube axis, and a plurality of rotating rods that respectively support a plurality of substrates arranged in a row, and the rotating rods are connected to the rotating plate. Claim No. 2, characterized in that the rotary rod is supported at a predetermined position on the same circumference of the rotary plate and is made to revolve around the tube axis as the rotary plate rotates, and the rotary rod itself also rotates on its own axis. ) The vapor phase growth apparatus described in section 2.
られるものであって、前記加熱源を前記反応室の周りに
巻回せしめられた高周波コイルから構成すると共に、 前記内筒を該高周波コイルによって誘導的に加熱可能な
材料で構成し、誘導加熱によって基板を加熱するように
したことを特徴とする特許請求の範囲第（３）項記載の
気相成長装置。(4) The vapor phase growth apparatus is used for epitaxial growth, and the heating source is composed of a high-frequency coil wound around the reaction chamber, and the inner tube is guided by the high-frequency coil. 3. A vapor phase growth apparatus according to claim 3, characterized in that the vapor growth apparatus is made of a material that can be heated manually, and the substrate is heated by induction heating.
スを供給しつつ反応室内を加熱し、基板上に薄膜を成長
せしめる気相成長装置において、管軸が鉛直方向を向く
ように配設せしめられた筒状体からなる反応室と、 該反応室の近傍に配設せしめられた加熱源と、該管軸に
対して平行となるように所定の間隔で複数枚の基板を支
持する基板支持体と、 反応ガスの流れが基板の配列領域において基板と平行と
なるように反応ガスを供給排出せしむべく、夫々、管軸
に対して垂直な面上に配設せしめられたガス供給口およ
びガス排出口とを 具備したことを特徴とする気相成長装置。(5) In a vapor phase growth apparatus in which a substrate is placed in a reaction chamber equipped with a heating source and a thin film is grown on the substrate by heating the inside of the reaction chamber while supplying a reaction gas, the tube axis is oriented vertically. A reaction chamber made of a cylindrical body, a heating source placed near the reaction chamber, and a plurality of substrates supported at predetermined intervals parallel to the tube axis. a substrate support, and a gas supply disposed on a plane perpendicular to the tube axis to supply and discharge the reaction gas so that the flow of the reaction gas is parallel to the substrates in the substrate arrangement area. A vapor phase growth apparatus characterized by comprising a port and a gas discharge port.
軸と平行となるように基板を配列支持するものであるこ
とを特徴とする特許請求の範囲第（５）項記載の気相成
長装置。(6) Claim (5), characterized in that the substrate support supports the substrates arranged and supported on a circumference centered on the tube axis so as to be parallel to the tube axis. vapor phase growth equipment.
れるものであって 前記加熱源は、反応室の周りに巻回せしめられた高周波
コイルと、 この高周波コイルによって誘導的に加熱可能な材料から
なり、前記基板支持体を囲むように同一円周上に所定の
間隔で管軸に平行に立てられた複数の加熱棒とから構成
されていることを特徴とする特許請求の範囲第（６）項
記載の気相成長装置。(7) The vapor phase growth apparatus is used for epitaxial growth, and the heating source includes a high-frequency coil wound around a reaction chamber, and a material that can be inductively heated by the high-frequency coil, Claim (6) is characterized in that it is comprised of a plurality of heating rods erected parallel to the tube axis at predetermined intervals on the same circumference so as to surround the substrate support. vapor phase growth equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13583787A JPS63300512A (en) | 1987-05-30 | 1987-05-30 | Chemical vapor deposition apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13583787A JPS63300512A (en) | 1987-05-30 | 1987-05-30 | Chemical vapor deposition apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63300512A true JPS63300512A (en) | 1988-12-07 |
Family
ID=15160921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13583787A Pending JPS63300512A (en) | 1987-05-30 | 1987-05-30 | Chemical vapor deposition apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63300512A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1598442A1 (en) * | 2003-02-12 | 2005-11-23 | Toyoda Koki Kabushiki Kaisha | Amorphous carbon film forming method and device |
| US7992318B2 (en) * | 2007-01-22 | 2011-08-09 | Tokyo Electron Limited | Heating apparatus, heating method, and computer readable storage medium |
| KR20110136748A (en) * | 2010-06-14 | 2011-12-21 | 에이에스엠 인터내셔널 엔.브이. | Method for processing solar cell substrates |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60113921A (en) * | 1983-11-25 | 1985-06-20 | Hitachi Ltd | Method for vapor-phase reaction and device thereof |
| JPS60200521A (en) * | 1984-03-26 | 1985-10-11 | Hitachi Ltd | Processor |
| JPS60257129A (en) * | 1984-06-04 | 1985-12-18 | Hitachi Ltd | Film forming apparatus |
| JPS61287220A (en) * | 1985-06-14 | 1986-12-17 | Toshiba Mach Co Ltd | Vapor growth equipment |
| JPS63126230A (en) * | 1986-11-17 | 1988-05-30 | Hitachi Ltd | Processor |
| JPS63150912A (en) * | 1986-12-15 | 1988-06-23 | Shin Etsu Handotai Co Ltd | Formation of thin film and apparatus therefor |
-
1987
- 1987-05-30 JP JP13583787A patent/JPS63300512A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60113921A (en) * | 1983-11-25 | 1985-06-20 | Hitachi Ltd | Method for vapor-phase reaction and device thereof |
| JPS60200521A (en) * | 1984-03-26 | 1985-10-11 | Hitachi Ltd | Processor |
| JPS60257129A (en) * | 1984-06-04 | 1985-12-18 | Hitachi Ltd | Film forming apparatus |
| JPS61287220A (en) * | 1985-06-14 | 1986-12-17 | Toshiba Mach Co Ltd | Vapor growth equipment |
| JPS63126230A (en) * | 1986-11-17 | 1988-05-30 | Hitachi Ltd | Processor |
| JPS63150912A (en) * | 1986-12-15 | 1988-06-23 | Shin Etsu Handotai Co Ltd | Formation of thin film and apparatus therefor |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1598442A1 (en) * | 2003-02-12 | 2005-11-23 | Toyoda Koki Kabushiki Kaisha | Amorphous carbon film forming method and device |
| EP1598442A4 (en) * | 2003-02-12 | 2012-12-19 | Jtekt Corp | Amorphous carbon film forming method and device |
| EP2703521A1 (en) * | 2003-02-12 | 2014-03-05 | Jtekt Corporation | Forming method and apparatus for amorphous carbon films |
| US7992318B2 (en) * | 2007-01-22 | 2011-08-09 | Tokyo Electron Limited | Heating apparatus, heating method, and computer readable storage medium |
| US8186077B2 (en) | 2007-01-22 | 2012-05-29 | Tokyo Electron Limited | Heating apparatus, heating method, and computer readable storage medium |
| KR20110136748A (en) * | 2010-06-14 | 2011-12-21 | 에이에스엠 인터내셔널 엔.브이. | Method for processing solar cell substrates |
| JP2012009870A (en) * | 2010-06-14 | 2012-01-12 | Asm Internatl Nv | Method of processing solar cell |
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