JP7371510B2 - Film formation method and substrate manufacturing method - Google Patents

Description

The present invention relates to a film-forming method and a substrate manufacturing method. The present invention relates to a method of forming a polycrystalline film, and a method of manufacturing a SiC polycrystalline substrate, in which a supporting substrate is separated after forming a polycrystalline film to obtain a SiC polycrystalline substrate.

SiC is a compound semiconductor material composed of silicon (hereinafter sometimes referred to as "Si") and carbon. SiC not only has an excellent dielectric breakdown field strength 10 times that of Si and a band gap three times that of Si, but also allows for the control of p-type and n-type over a wide range, which is necessary for device fabrication. For these reasons, it is expected to be a material for power devices that exceeds the limits of Si.

However, compared to the widely popular Si semiconductor, SiC semiconductors cannot be produced in large quantities and are expensive because large-area SiC single crystal substrates cannot be obtained and the process is complicated. Ta.

Various efforts have been made to reduce the cost of SiC semiconductors. For example, Patent Document 1 describes a method for manufacturing a SiC substrate, in which at least an SiC single crystal substrate and a SiC polycrystalline substrate having a density of micropipes of 30 pieces/ ^cm2 or less are prepared, and the SiC single crystal substrate and the SiC polycrystalline substrate are prepared. It is described that a substrate in which a SiC single crystal layer is formed on a SiC polycrystalline substrate is manufactured by performing a step of bonding the SiC polycrystalline substrate together, and then performing a step of thinning the SiC single crystal substrate. ing.

Furthermore, Patent Document 1 discloses that before the step of bonding a SiC single crystal substrate and a SiC polycrystalline substrate, a step of implanting hydrogen ions into the SiC single crystal substrate to form a hydrogen ion implantation layer is performed, After the process of bonding the crystal substrate and the SiC polycrystalline substrate, and before the process of thinning the SiC single crystal substrate, heat treatment is performed at a temperature of 350°C or less, and the process of thinning the SiC single crystal substrate is performed using hydrogen. A method for manufacturing a SiC substrate is described, which includes a step of mechanically peeling off an ion-implanted layer.

With this method, more SiC substrates can be obtained from one SiC single crystal ingot.

JP2009-117533A Patent No. 3857446

However, most of the SiC bonded substrates manufactured by the method described in Patent Document 1 are SiC polycrystalline substrates. Therefore, it is necessary to use a SiC polycrystalline substrate with a sufficient thickness to have mechanical strength so that the SiC bonded substrate is not damaged during handling such as polishing.

Conventionally, the SiC polycrystalline substrate has been produced by forming SiC polycrystalline films on a large number of graphite support substrates by CVD, and then depositing each support substrate coated with the SiC polycrystalline film on the end face of the SiC polycrystalline film. The support substrate is exposed from the side surface of the SiC polycrystalline film by grinding or the like, and then the supporting substrate is separated from the SiC polycrystalline film by baking in an oxidizing atmosphere, etc., and then the SiC polycrystalline film is ground by surface grinding and, if necessary, A SiC polycrystalline substrate with a desired thickness and surface condition was obtained by polishing the substrate (for example, Patent Document 2).

However, in the above-described method, when a large number of support substrates are placed into a deposition chamber of a CVD deposition apparatus and a film is formed, the film formation may be affected by the temperature distribution in the deposition chamber or the concentration gradient of the deposition gas. There is a risk that large variations in the film thickness of the SiC polycrystalline film may occur, and this variation may cause the film formation process to take a longer time and the amount of grinding during surface grinding of the SiC polycrystalline film after film formation to increase. This has been a factor that reduces the productivity of polycrystalline films and increases manufacturing costs.

The present invention has been made with attention to such problems, and provides a film formation method and substrate manufacturing method that can suppress variations in film thickness within the same surface of a film formation target surface of a film formation target substrate. The purpose is to provide a method.

As a result of intensive research to solve the above problems, the present inventors have discovered that in a method of forming SiC polycrystalline films on, for example, a large number of support substrates by CVD, raw material gas is flowed, for example, in the vertical direction, and the supporting substrates are The support substrate is arranged so that the surface normal of the surface to be film-formed on the substrate is perpendicular to the flow direction of the raw material gas, and the surface normal to the surface to be film-formed on the support substrate and the rotation axis around which the support substrate rotates. The inventors have discovered that if the film is formed by rotating the support substrate in a direction in which the .

That is, in order to solve the above-mentioned problems, the film forming method of the present invention is a film forming method of forming a film on a film forming target substrate by a chemical vapor deposition method, the film forming method comprising forming a film forming film on a film forming target substrate. Forming a film by rotating the substrate to be film-formed in a direction in which the surface normal of the surface is perpendicular to the flow direction of the raw material gas, and the normal to the surface is parallel to the rotation axis around which the substrate to be film-formed rotates. , a film forming method.

The film-forming method is a method of forming a film on a plurality of the film-forming target substrates, and a central axis of the plurality of film-forming target substrates may coincide with the rotation axis.

The distance between the plurality of film-forming target substrates may be equal.

The film-forming method is a method of forming a film on a plurality of the film-forming target substrates, and the plurality of film-forming target substrates may constitute at least one rotationally symmetrical substrate group arranged rotationally symmetrically.

The rotational axes of the plurality of rotationally symmetrical substrate groups may coincide with each other.

The distance between the substrates among the plurality of rotationally symmetrical substrate groups may be equal.

The film formation target substrate may be a silicon support substrate or a carbon support substrate, and the film formation method may be a method of forming a silicon carbide polycrystalline film on the film formation target substrate.

Moreover, in order to solve the above-mentioned problem, a manufacturing method of a substrate of the present invention includes the above-described film forming method of the present invention.

According to the present invention, it is possible to provide a film forming method and a substrate manufacturing method that can suppress variations in film thickness within the same surface of a film forming target surface of a film forming target substrate. Therefore, the present invention has the effect of improving productivity and reducing manufacturing costs by shortening film formation time, reducing the amount of grinding in surface grinding, etc.

FIG. 2 is a schematic diagram showing an example of a mode in which a wafer-shaped substrate 100 to be film-formed is held by a rotating shaft 200 during film-forming. FIG. 2 is a schematic diagram showing an example of a mode in which a plurality of wafer-shaped film-forming target substrates 100 are held on a rotating shaft 200 during film-forming. 3 is a schematic diagram showing an example of a mode in which a plurality of wafer-shaped film-forming target substrates 100 are held on a rotating shaft 200 during film formation, which is different from FIG. 2. FIG. 4 is a schematic diagram showing an example of a mode in which a plurality of wafer-shaped film-forming target substrates 100 are held on a rotating shaft 200 during film formation, which is different from FIG. 3. FIG. FIG. 1 is a schematic cross-sectional view of a film forming apparatus 1000.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings, but the present invention is not limited to these embodiments.

[Film formation method]
The film forming method of the present invention is a method of forming a film on a target substrate by chemical vapor deposition.

(Target substrate for film formation)
The film formation target substrate, which is the substrate on which a film is formed, is not particularly limited, but may include, for example, a silicon support substrate or a carbon support substrate. Further, as the shape of the substrate to be film-formed, for example, a thin film, circular wafer shape, and a diameter of about 4 inches to 8 inches can be mentioned.

(film)
The film to be formed is not particularly limited, and examples include films of silicon carbide, titanium nitride, aluminum nitride, titanium carbide, or diamond-like carbon. Further, a single crystal film may be formed, or a polycrystalline film may be formed.

A specific example of the film forming method of the present invention includes a method in which a silicon supporting substrate or a carbon supporting substrate is used as a film forming target substrate, and a silicon carbide polycrystalline film is formed on these supporting substrates.

FIG. 1 shows an example of a mode in which a wafer-shaped film-forming target substrate 100 is held on a rotating shaft 200 during film-forming. The film-forming target substrate 100 has an opening 110 at its center through which the rotating shaft 200 can be inserted, and the rotating shaft 200 is inserted into the opening 110 and held by the rotating shaft 200. The rotating shaft 200 can be made of a material that can withstand film formation by chemical vapor deposition; for example, the rotating shaft 200 made of carbon can be used. By rotating the rotating shaft 200 counterclockwise as shown by arrow A, for example, the film-forming target substrate 100 can be rotated counterclockwise as shown by arrow A. Further, the rotating shaft 200 may be rotated clockwise. Note that the rotation speed of the substrate to be film-formed during the film-forming process is not particularly limited, but can be set to, for example, 0.1 to 60 rpm. If the rotation speed is slower than 0.1, the thickness of the deposited film may be significantly uneven. If the rotation speed is faster than 60 rpm, there is a risk of damage to the rotating shaft 200 or the generation of airflow due to the rotation, which may cause the film to become uneven. There is a risk of membrane failure. The front surface 120a and the back surface 120b of the substrate 100 to be film-formed are the surface 120 to be film-formed, and a vector perpendicular to the surface 120 to be film-formed is the surface normal 300.

Further, arrow B indicates the direction in which the raw material gas flows. The source gas is not particularly limited as long as it can form a film, and commonly used source gases can be used. For example, when forming a polycrystalline film of silicon carbide, a Si-based source gas and a C-based source gas are used. As the Si-based raw material gas, for example, silane (SiH ₄ ) can be used, as well as chlorine-based Si raw material-containing gases containing Cl that have an etching effect, such as SiH ₃ Cl, SiH ₂ Cl ₂ , SiHCl ₃ , and SiCl ₄ . (chloride-based raw materials) can also be used. As the C-based raw material gas, for example, methane (CH ₄ ), propane (C ₃ H ₈ ), and acetylene (C ₂ H ₂ ) can be used.

When forming a polycrystalline film of titanium nitride, TiCl ₄ gas, N ₂ gas, or the like can be used. When forming a polycrystalline film of aluminum nitride, AlCl ₃ gas, NH ₃ gas, or the like can be used. When forming a polycrystalline film of titanium carbide, TiCl ₄ gas, CH ₄ gas, or the like can be used. When forming a polycrystalline film of diamond-like carbon, a hydrocarbon gas such as acetylene can be used.

Further, the raw material gas may be accompanied by a carrier gas. A commonly used carrier gas can be used as long as the raw material gas can be spread onto the film formation target substrate 100 without inhibiting film formation. For example, when forming a silicon carbide polycrystalline film, hydrogen (H ₂ ), which has excellent thermal conductivity and has an etching effect on SiC, can be used.

Further, an impurity doping gas can be supplied as a third gas simultaneously with these source gas and carrier gas. For example, nitrogen (N ₂ ) can be used when the conductivity type is n-type, and trimethylaluminum (TMA) can be used when the conductivity type is p-type.

In the film-forming method of the present invention, the surface normal 300 of the film-forming surface 120 of the film-forming target substrate 100 is orthogonal to the flow direction B of the source gas, and the surface normal 300 and the film-forming target substrate 100 are rotated. Film formation is performed by rotating the film formation target substrate 100 in a direction in which the rotation axis 200 is parallel. In this way, by supplying the raw material gas along the film-forming target surface 120 while rotating the film-forming target substrate 100 and forming the film, the raw material gas is supplied unevenly to the film-forming target surface 120. Therefore, it is possible to suppress variations in film thickness within the same plane of the film-forming target surface 120 of the film-forming target substrate 100.

Note that the direction in which the source gas flows can be arbitrarily set to be parallel to the film-forming target surface 120; for example, it may be vertical as shown by arrow B in FIG. 1, or it may be horizontal. It's okay.

Further, the film forming method of the present invention may be a method of forming films on a plurality of film forming target substrates 100 as shown in FIG. By installing the number of substrates 100 to be film-formed that can be film-formed in a single process in the film-forming chamber of the film-forming apparatus, film-forming efficiency can be increased. Here, it is preferable to form a film by installing the plurality of film-forming target substrates 100 so that their central axes 130 are aligned with the rotation axis 200. That is, each substrate 100 to be film-formed has an opening 110 in its center through which the rotating shaft 200 can be inserted. Place 100. With such an arrangement, the central axis 130 of the plurality of film-forming target substrates 100 can be made to coincide with the rotation axis of the rotating shaft 200, and the film-forming conditions can be adjusted for any of the film-forming target substrates 100. This makes it possible to prevent the source gas from being unbalancedly supplied to any of the film-forming surfaces 120, so that in any film-forming target substrate 100, the same surface of the film-forming surface 120 can be It is possible to suppress variations in film thickness within the film.

When a plurality of substrates 100 to be film-formed are formed into films in one process as shown in FIG. 2, it is preferable that the inter-substrate distances 140 of the plurality of substrates 100 to be film-formed are equally spaced. By having the inter-substrate distances 140 at equal intervals, the source gas can be uniformly supplied to any of the film-forming surfaces 120, so that the Variations in film thickness can be further suppressed.

FIG. 3 is a schematic diagram illustrating an example of a mode in which a plurality of wafer-shaped film formation target substrates 100 are held on a rotating shaft 200 during film formation, which is different from FIG. 2. The film forming method of the present invention may be a method of forming films on a plurality of film forming target substrates 100 as shown in FIG. By installing the number of substrates 100 to be film-formed that can be film-formed in a single process in the film-forming chamber of the film-forming apparatus, film-forming efficiency can be increased. Further, in the case of the embodiment shown in FIG. 3, a plurality of film-forming target substrates 100 constitute a rotationally symmetrical substrate group 400 arranged rotationally symmetrically around the rotation axis 200. Although not shown in FIG. 3, each film-forming target substrate 100 is fixed to the rotating shaft 200 by a fixing means. Although the fixing means is not particularly limited, the substrate 100 to be film-formed can be fixed by, for example, sandwiching and gripping the substrate 100 to be film-formed with a nut or washer inserted through the hole.

The rotationally symmetrical substrate group 400 is composed of a plurality of film formation target substrates 100 on the same plane, and although four film formation target substrates 100 are shown in FIG. The rotationally symmetrical substrate group 400 can be configured by an arbitrary number of about eight substrates 100 to be film-formed. By configuring a rotationally symmetrical substrate group 400 with a plurality of film-forming target substrates 100 and rotating this, film-forming conditions can be made uniform for all film-forming target substrates 100. Therefore, by being able to suppress supply of the raw material gas unevenly to any of the film-forming surfaces 120, the film thickness within the same film-forming surface 120 can be reduced in any of the film-forming target substrates 100. Variation can be suppressed.

FIG. 4 is a schematic diagram showing an example of a mode in which a plurality of wafer-shaped film-forming target substrates 100 are held on a rotating shaft 200 during film formation, which is different from FIG. 3. Here, it is preferable that the rotational axes 410 of the plurality of rotationally symmetrical substrate groups 400 all coincide with each other. That is, the film-forming target substrates 100 of any rotationally symmetrical substrate group 400 are arranged to be fixed to the same rotation axis 200. With such an arrangement, any of the rotation axes 410 of the plurality of rotationally symmetrical substrate groups 400 can be made to coincide with the rotation axis of the rotation axis 200, and the film formation conditions can be adjusted for any of the film formation target substrates 100. This makes it possible to prevent the source gas from being unbalancedly supplied to any of the film-forming surfaces 120, so that in any film-forming target substrate 100, the same surface of the film-forming surface 120 can be It is possible to suppress variations in film thickness within the film.

As shown in FIG. 4, when forming a film on the film formation target substrates 100 of a plurality of rotationally symmetrical substrate groups 400 in a single process, the inter-substrate distances 420 between the plurality of rotationally symmetrical substrate groups 400 are equally spaced. It is preferable that Since the distances 420 between the substrates are equal, the raw material gas can be evenly supplied to any film formation target surface 120 without any bias, so that the Variations in film thickness can be further suppressed.

(Film forming apparatus 1000)
Hereinafter, as an example, a film forming apparatus 1000 that can be used in the film forming method of the present invention will be described.

FIG. 5 shows a schematic cross-sectional view of the film forming apparatus 1000. The film forming apparatus 1000 includes a film forming chamber 1010 in which a film forming target substrate 100 held by a rotating shaft 200 is formed into a film, an inlet 1020 through which source gas and carrier gas are introduced into the film forming chamber 1010, and gas discharged from the film forming chamber 1010. An exhaust port 1030 that exhausts the raw material gas and carrier gas discharged from the film forming apparatus 1000 to the outside of the film forming apparatus 1000, an exhaust gas introduction chamber 1040 that introduces the raw material gas and carrier gas discharged from the film forming chamber 1010 to the exhaust port 1030, and an exhaust gas introduction A box 1050 that covers the chamber, a heater 1060 that controls the temperature inside the film forming chamber 1010 from outside the box 1050, and a water-cooled stainless steel housing 1100 that is located outside the heater 1060 and serves as the exterior of the film forming apparatus 1000. be able to. Further, although not shown in FIG. 5, the film forming apparatus 1000 can include rotational driving means such as a motor or an engine that rotates the rotating shaft 200.

[Substrate manufacturing method]
Next, a method for manufacturing a substrate according to the present invention will be explained. The substrate manufacturing method of the present invention includes the film forming method of the present invention described above. Here, explanation of the film forming method will be omitted.

Taking a method for manufacturing a polycrystalline silicon carbide substrate as an example of a method for manufacturing a substrate, this manufacturing method further includes an exposure step and a combustion removal step, which will be described below.

<Exposure process>
As an example of the exposure step, an end portion of the formed silicon carbide polycrystalline film is removed from a carbon support substrate with a silicon carbide polycrystalline film formed on the surface obtained by the above-described film forming method of the present invention. A step of exposing the carbon support substrate using the carbon support substrate is included. This step exposes the carbon support substrate, making it easier to vaporize the carbon support substrate in the combustion removal step described below.

In the film forming process, a silicon carbide polycrystalline film is formed on the side wall of the carbon support substrate, so this is put into an end face processing device, for example, and the silicon carbide polycrystalline film is processed inward from the end face of the formed silicon carbide polycrystalline film. By grinding 4 mm, the end face of the carbon support substrate can be exposed. Note that if the outer periphery of the carbon support substrate is masked with ring-shaped graphite or the like before forming the silicon carbide polycrystalline film, end face processing is not required, and in this case, the mask can be removed. This is the exposure process.

Alternatively, the carbon support substrate with a silicon carbide polycrystalline film formed on its surface may be hollowed out with a core drill or the like to a desired diameter (for example, 6 inches diameter), thereby exposing the carbon support substrate at the outer periphery of the side surface. can.

<Combustion removal process>
An example of the combustion removal step is a step of holding the carbon support substrate after the exposure step under conditions of 1 atm pressure and 800° C. in the atmosphere for 100 hours or more. In this step, the carbon supporting substrate can be burned and removed, so a silicon carbide polycrystalline substrate can be obtained.

(polishing process)
The method for manufacturing a silicon carbide polycrystalline substrate may include a polishing step of polishing the surface of the formed silicon carbide polycrystalline film after the combustion removal step. If a silicon carbide polycrystalline substrate is to be used in the manufacture of semiconductors, it must have surface precision that can be used in semiconductor manufacturing processes. Therefore, it is preferable to smooth the surface of the silicon carbide substrate through this step.

For example, the surface of the silicon carbide substrate is smoothed by lapping it with diamond slurry, hard polishing it with a mixed slurry of diamond and alumina, and then polishing it with silica slurry (colloidal silica, pH 11). can do.

(Other processes)
The method for manufacturing a silicon carbide substrate of the present invention can include other steps in addition to the steps described above. For example, a cleaning process for removing deposits on the silicon carbide substrate due to a polishing process, etc. may be mentioned. Further, the method for manufacturing a substrate of the present invention can include any step for manufacturing a substrate when manufacturing a substrate different from a silicon carbide polycrystalline substrate.

EXAMPLES Examples of the present invention will be specifically described below with reference to comparative examples. Here, a carbon support substrate was used as a film-forming target substrate, and a silicon carbide polycrystalline film was formed on the carbon support substrate. Note that the present invention is not limited to these Examples.

(Example 1)
The film forming apparatus 1000 used to form the silicon carbide polycrystalline film was a hot wall type thermal CVD apparatus in which source gas was introduced from the bottom of the film forming chamber 1010 and discharged from the ceiling. As the substrate 100 to be film-formed, a carbon support substrate was used, which had a wafer shape with a thickness of 5 mm and a diameter of 400 mm, and had an opening 110 with a diameter of 50 mm in the center. As in the embodiments shown in FIGS. 2 and 5, the substrate 100 to be film-formed is placed in the film-forming chamber 1010 so that its surface normal 300 is parallel to the rotation axis 200 and perpendicular to the flow direction of the source gas. Placed. There were six film formation target substrates 100 used for film formation, and the film formation target substrates 100 were skewered on the rotating shaft 200 so that the inter-substrate distance 140 of the opposite film formation target surfaces 120 of each film formation target substrate 100 was 20 mm. Fixed. Note that the distance between the inner wall of the film forming chamber 1010 and the film forming surface 120 facing the inner wall is also 20 mm so that the flow of the source gas passing between the film forming target substrates 100 is uniform. installed.

After the inside of the film forming chamber 1010 is evacuated with an exhaust pump to make it into a reduced pressure state, Ar gas is introduced to return the pressure inside the film forming chamber 1010 to atmospheric pressure, and while the Ar gas is flowing, the film forming chamber 1010 is The inside was heated to 1400°C. SiCl ₄ and CH ₄ were used as source gases, and H ₂ was used as a carrier gas. While rotating the substrates 100 to be film-formed at a rotational speed of 1 rpm, the gas flow rate ratio was converted to a standard state (0° C., 1 atm) of SiCl ₄ :CH ₄ :H ₂ = 1:1:10. , film formation was carried out for 2.5 hours on the front surface 120a and back surface 120b of the film formation target surface 120. At this time, the pressure inside the film forming chamber 1010 was controlled to be 20 kPa.

After the film-forming process was completed, four substrates each having a diameter of 150 mm were cut out of the film-forming target substrate 100 on which the silicon carbide polycrystalline film had been deposited using a core drill having an inner diameter of 151 mm. The carbon support substrate, which is the film-forming target substrate 100, is exposed at the outer peripheral portion of each hollowed-out substrate. By heating this substrate at 800° C. for 100 hours or more in an air atmosphere, the carbon support substrate was burned and removed, and a total of eight silicon carbide polycrystalline substrates were separated per one film-forming target substrate 100. The remaining five silicon carbide polycrystalline films 100 on which the silicon carbide polycrystalline films were formed were also subjected to the same exposure process and combustion removal process to obtain a total of 48 silicon carbide polycrystalline substrates per batch. Ta.

As a result of measuring the thickness of all of these 48 polycrystalline silicon carbide substrates, the thinnest part in the same plane was 130 μm, and the thickest part was 400 μm.

(Example 2)
As the substrate 100 to be film-formed, a carbon support substrate having a wafer shape with a thickness of 5 mm and a diameter of 151 mm and without an opening 110 was used. As shown in FIG. 3, one set of rotationally symmetrical substrates 400 is a set of rotationally symmetrical substrates 400 that are rotationally symmetrical with respect to the rotational axis 200 and arranged between nuts, and the inter-substrate distance 420 between the rotationally symmetrical substrates 400 is A total of six rotationally symmetrical substrate groups 400 (a total of 24 substrates 100 to be film-formed) were arranged in the film-forming chamber 1010 so that the rotationally symmetrical substrates 400 were equally spaced at 20 mm. In addition, the distance between the inner wall of the film forming chamber 1010 and the film forming surface 120 facing the inner wall is set to 20 mm so that the flow of the source gas passing between the film forming target substrates 100 becomes uniform. installed. The film was formed under the same conditions as in Example 1.

After the film-forming process is completed, the film-forming target substrate 100 on which the silicon carbide polycrystalline film has been deposited is taken out from the film-forming chamber 1010, and a part of the edge of the silicon carbide polycrystalline film is removed to form the film-forming target substrate 100. The carbon support substrate was exposed. Thereafter, the carbon support substrate was burned off by heating this substrate in the air at 800° C. for 100 hours or more. Through these operations, a total of 2 silicon carbide polycrystalline substrates were obtained per 100 film-forming target substrates, and a total of 48 silicon carbide polycrystalline substrates per batch.

As a result of measuring the thickness of all of these 48 polycrystalline silicon carbide substrates, the thinnest part in the same plane was 130 μm, and the thickest part was 400 μm.

(Comparative example 1)
The film formation process, exposure process, and combustion removal process were performed in the same manner as in Example 1, except that the rotation speed of the film formation target substrate 100 in the film formation process was set to 0 rpm (no rotation). As a result of measuring the thickness of all of the 48 silicon carbide polycrystalline substrates obtained, the thinnest part in the same plane was 30 μm, and the thickest part was 520 μm.

[summary]
As described above, according to the present invention, it is possible to suppress variations in the thickness of the deposited film within the same surface of the deposition target surface of the deposition target substrate. In the embodiment, as an example, the case of forming a silicon carbide polycrystalline film on a carbon substrate was introduced, but the effects of the present invention are not limited to this case. It can also be obtained when forming a single crystal film or a polycrystalline film of titanium nitride, aluminum nitride, titanium carbide, diamond-like carbon, or the like.

100 Substrate to be film-formed 110 Opening 120 Surface to be film-formed 120a Front surface 120b Back surface 130 Central axis 140 Distance between substrates 200 Axis of rotation 300 Surface normal 400 Group of rotationally symmetrical substrates 410 Axis of rotation 420 Distance between substrates 1000 Film-forming Apparatus 1010 Film forming chamber 1020 Inlet 1030 Exhaust port 1040 Exhaust gas introduction chamber 1050 Box 1060 Heater 1100 Housing A Arrow B Arrow

Claims (8)

A film deposition method for depositing a film on a substrate to be deposited by chemical vapor deposition,
The film is formed in a direction in which the surface normal of the film-forming surface of the film-forming target substrate is orthogonal to the flow direction of the source gas, and the surface normal and the rotation axis of the film-forming target substrate are parallel to each other. The target substrate is rotated to form a film,
A film forming method , wherein the direction in which the source gas flows is a vertical direction . The film forming method is a method of forming a film on a plurality of the film forming target substrates,
Each of the plurality of film-forming target substrates has an opening in the center through which the rotating shaft can be inserted, and the plurality of film-forming target substrates are skewered by inserting the rotating shaft into the opening. is located,
The film forming method according to claim 1, wherein the central axes of the plurality of film forming target substrates coincide with the rotation axis. 3. The film forming method according to claim 2, wherein the distances between the plurality of film forming target substrates are equal intervals. The film forming method is a method of forming a film on a plurality of the film forming target substrates,
The plurality of film-forming target substrates constitute at least one rotationally symmetric substrate group arranged rotationally symmetrically around the rotation axis ,
2. The film forming method according to claim 1, wherein each of the film forming target substrates is fixed to the rotating shaft by a fixing means sandwiching and gripping the film forming target substrate. 5. The film forming method according to claim 4, wherein the rotational axes of the plurality of rotationally symmetrical substrate groups coincide with each other. 6. The film forming method according to claim 5, wherein distances between substrates among the plurality of rotationally symmetrical substrate groups are equal intervals. 7. The film forming target substrate is a silicon supporting substrate or a carbon supporting substrate, and the film forming method is a method of forming a silicon carbide polycrystalline film on the film forming target substrate. film formation method. A method for manufacturing a substrate, comprising the film forming method according to any one of claims 1 to 7.

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