JPS61287220A - Vapor growth equipment - Google Patents

Abstract

PURPOSE:To increase a substrate treating ability by providing a rotatable substrate holder for vertically and radially holding a plurality of substrates, a heating plate for heating the held substrate group from both upper and lower surfaces, and means for supplying reaction gas in a radial direction. CONSTITUTION:A rotational shaft 14 which passes through a base 1 and a partition plate 2, and a lower side circular heating plate 10 on the shaft 14 are provided in the lower portion of a reaction chamber 7. A substrate holder 12 having two rings is placed on the plate 10, and substrates 13 to be treated are engaged substantially vertically and radially in the cutout grooves of the rings. An upper side circular heating plate 11 is provided on a cover 5. Reaction gas intake/exhaust nozzles 16 and a plurality of holes 17 are formed at the top of a pipe 15 which passes through the center of the shaft 14. A distributor 19 having a plurality of holes 20 is provided inside an outer cylinder 3. When this equipment is used, many substrates can be treated in the small-sized reaction chamber 7, the temperature in the treating space and the reaction gas flow can be equalized to form an accurate layer.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a vapor phase growth apparatus used for manufacturing semiconductor devices, and particularly to a vapor phase growth apparatus having a structure suitable for processing a large number of substrates. It is related to the device.

[Prior art and its problems]

Conventionally, commonly used vapor phase growth apparatuses are of the so-called cold-wall horizontal type, vertical type, or barrel type.

In the horizontal type, the substrates are placed side by side on a rectangular flat susceptor arranged horizontally so that their back surfaces are almost in close contact with each other, and in the vertical type, the substrates are placed on a horizontally arranged disk-shaped susceptor. In the barrel type, the substrate is placed in close contact with the outer surface of the multifaceted cylindrical susceptor in the same manner as in the horizontal and vertical types. The susceptor is mainly heated by radiation energy, and the substrate is heated by the susceptor. In this method, which heats substrates and plates mainly by generating heat from the susceptor, the number of substrates that can be processed at once depends on the size of the susceptor surface, and the placement of the heating source does not affect the entire susceptor. For this reason, substrates must be placed on the upper plane in horizontal and vertical types, and can only be placed on the outer surface of a polygonal cylinder in barrel types. There were relatively few.

On the other hand, in order to increase the number of substrates to be processed per cycle, the substrates are placed in a row almost vertically on a horizontally arranged substrate holder, and the substrates are placed in a hot wall type using the bell jar body as a heating element, or on the inside of the bell jar. A method has been proposed in which a cylindrical heating section is provided outside the group. These methods have heating parts only outside a certain high-temperature space in the processing chamber, so if the high-temperature space is enlarged, the overall heat capacity increases, and the heating time increases, and the heating part is heated between the center and outside of the high-temperature space. It had the disadvantage of easily causing temperature differences.

[Purpose of the invention]

The object of the present invention is to increase the processing capacity, and to make the temperature of the processing space and the flow of the reaction gas uniform, thereby making the vapor phase growth layer uniform between the substrates and within the substrate.

[Summary of the invention]

The present invention includes a rotatable substrate holder that holds a plurality of substrates substantially vertically and radially in a reaction chamber, and heat generating plates provided above and below a group of substrates supported by this substrate holder, A gas supply/discharge means is provided for heating the substrate group and flowing a reactive gas to the center or outside of the substrate group, and the reactive gas is made to flow in a radial direction along each substrate from the center or outside of the substrate group. It is something.

〔Example〕

The present invention will be explained in detail below with reference to Examples.

FIG. 1 shows an embodiment of the vapor phase growth apparatus of the present invention. In the figure, 1 is a base, on which a partition plate 2, an outer cylinder 3, and a lid 5, all made of quartz, are shown. A reaction chamber 7 is formed which is sealed with sealants 4 and 6. A rotating shaft 14 is provided in the lower part of the reaction chamber 7, passing through the base 1 and the partition plate 2, and rotatably supported on the base 1.
A circular lower heat generating plate 10 made of carbon is provided on top.

A substrate holder 12 having two rings made of quartz, for example, which do not generate heat due to radiation, is placed on the lower heating plate 10, and a plurality of substrates 13 to be processed are placed in the grooves at the top of these rings. It is designed to fit vertically and radially. A circular upper heating plate 11 made of carbon and fixed to the lid 5 is provided above the group of substrates A arranged in an annular manner. Below the partition plate 2 is a lower heating plate 10.
An RF coil 8 as a heating source is provided, and a reaction chamber 7 is also provided.

A nozzle 16 for supplying or exhausting reactive gas is attached to the upper part of a vibrator 15 that vertically passes through the axial center of the rotating shaft 14 of the lower heating plate 1o. This nozzle 16 is located at the center of the annular substrate group A, and is used to exhaust or supply air to a distributor 19 that can uniformly blow out the reaction gas outward or suck in and exhaust surrounding gas. A plurality of pipes 18 are connected to each other. The reaction gas supply/discharge means consisting of the nozzle 16 and the distributor 19 can be configured to flow the reaction gas from the center to the outside, with the nozzle 16 used for air supply and the distributor 19 used for exhaust, or vice versa. Take care,
The nozzle 16 can be used for exhausting, and the reaction gas can be flowed from the periphery toward the center, or if necessary, the reaction gas can be alternately switched within one batch of processing. . As mentioned above, the lower heating plate 1o and the upper heating plate 11 each have separate heating sources 8 and 9, so that they can be independently controlled to uniformize the heating temperature of the reaction chamber 7. It has become.

Further, for loading and unloading of substrates, the outer cylinder 3 of the reaction chamber 7, together with the lid 5 and the heating lamp 9, can be moved up and down with respect to the base I by a lifting device (not shown).

Next, the effect will be explained.

First, to explain loading and unloading of the substrate 13, the processed substrate 13 is removed while the outer cylinder 3, lid 5, and heating lamp 9 are lifted upward with respect to the base 1 using a lifting device (not shown), and a new one is loaded. Then, the unprocessed substrate 13 is loaded into a predetermined groove on the substrate holder 12. In addition,
The loading and unloading of the substrate 13 may be performed together with the substrate holder 12. Next, the elevating device is driven to lower the outer cylinder 3 and the lid 5 to seal the reaction chamber 7,
Set the state as shown in FIG. Next, purge gas N2 is supplied from the nozzle I6 or the distributor 19 to replace the air in the reaction chamber 7 with N2 gas, and then N2 gas is supplied from the nozzle 16 or the distributor 19 to replace the inside of the reaction chamber 7 with N2 gas. The rotating shaft 14 is rotated at a low speed while flowing N2 gas, and power is supplied to the RF coil 8 and the heating lamp 9 to start heating. When high frequency power is supplied to the RF coil 8, it passes through the quartz partition plate and the lower heating plate 1 of the carbon ring.
0 is inductively heated, and the radiation emitted from the heating lamp 9 passes through the quartz lid 5 and causes the upper heating plate II of the carbon ring to generate heat. The upper heat generating plate 11 and the lower heat generating plate 1o are heated to a red-hot state or an incandescent state at the same temperature, making the reaction chamber 7 a heating space, and the substrate 13 placed in this heating space is heated uniformly and in a predetermined manner. Heat thoroughly. Once the substrate 13 has been heated to the vapor phase growth temperature, etching gas is mixed into the already supplied f-I 2 gas to clean the surface of the substrate 13, and then a reactive gas is added into the N2 gas. It mixes and starts vapor phase growth.

This device also has a unique feature in the way the gas flows. That is, there are cases in which the nozzle 16 is used as a supply port and the distributor 19 is used as an exhaust port, and cases in which the distributor 19 is used as a supply port and the nozzle 16 is used as an exhaust port. On the other hand, it is in the radial direction. This is because only the substrate 13 exists between the air supply port and the exhaust port, and there are no other obstructions, and the gas flow is uniform, which is effective in making the vapor phase growth layer more uniform. When the vapor phase growth is completed, N2 gas is flowed into the reaction chamber 7 and the RF coil 8 is turned on.
and cut off the power supply to the heating lamp 9. In this way, when the temperature inside the reaction chamber 7 drops to a predetermined temperature, the temperature is changed to N2 gas.
After flowing gas and replacing the inside of the reaction chamber 7 with N2 gas, the reaction chamber 7 is opened, the processed substrate 13 is removed, and a new substrate 13 to be processed is loaded. The above-described operations are then repeated in cycles.

2 and 3 show other embodiments of the substrate holder 12. In FIG. 2, the substrate 13 is placed on the substrate holder 12 using quartz carbon as shown in FIG. 4 or 5. or S
The temperature stability of the substrate 13 is increased by standing the support plate 20 or 21 made of iC and loading the substrate 13 on both sides thereof.

Figure 3 shows the symbol +2 to reduce the manufacturing cost of the substrate holder.
3, the case is divided into six parts and installed on the lower heat generating plate 10. Dividing from 3 to 8 is also possible. In this case as well, the substrate 13 can be loaded in the manner shown in FIGS. 1, 4, and 5.

In the embodiment described above, the substrate holder I2 was placed on the rotatable lower heating plate 10, but the lower heating plate 10 was fixed to the partition plate 2 side, and the substrate holder 12 was mounted on the rotation axis It may be rotatably supported by I4, and the upper and lower heat generating plates t
The heating sources of O and II are not limited to the above-mentioned embodiments, and can be of various types. [Effects of the Invention] As described above, according to the present invention, a large number of The high-temperature (reaction) space surrounding the substrate is miniaturized, making it possible to rapidly heat, rapidly cool, and equalize the temperature, and to direct the gas flow horizontally and radially toward the substrate. Since the gas contact is uniform, a highly precise vapor phase growth layer can be obtained.

[Brief explanation of drawings]

FIG. 1 is a schematic sectional view showing one embodiment of the present invention, FIGS. 2 and 3 are plan views showing other embodiments of the substrate holder, and FIGS. 4 and 5 are implementations of the structure shown in FIG. It is a side view which shows each different example of the support plate in an example. 1...base, 2...--partition plate, 3...
... Outer tube, 5 ... Lid, 7 ... Reaction chamber, 8 ... RF coil, 9 ... Heating lamp, 1o ...・Lower heating plate, 11...
... Upper heating plate, -13 ... Board, +2.1
22... Substrate holder, 14... Rotating shaft, 15... Tube, 16... Nozzle, 18
...Tube, +9...Distributor, A...
Board group

Claims (1)

[Claims] 1) A rotatable substrate holder that is located in the reaction chamber and holds multiple substrates to be processed almost vertically and radially; A vapor phase growth apparatus comprising a heat generating plate that heats the substrate group, and a gas supply/discharge means having an air supply port and an exhaust port that flow a reaction gas from the center to the outside or from the outside to the center of the substrate group.