JPH0864544A - Vapor growing method - Google Patents

Abstract

PURPOSE: To enable even thin films to be formed on a processed substrate by a method wherein ringlike jigs comprising heat insulating material opposite to the growing surface of a processed substrate are arranged at a specific interval with the processed substrate to be vapor grown. CONSTITUTION: A processed substrate 1 supported by a free rotatable supporting jig 11 in a processing chamber 5 is heated both downward and upward by infrared lamps 2 with a reflecting board 3 provided on the back surface thereof so as to lead reaction gas into the processing chamber 5. On the other hand, the other ringlike jigs 4 comprising heat insulating material are fixed at a specific interval above the growing surface of the processed substrate 1. The ringlike jigs 4 are fixed opposing to the peripheral thicker part of the processed substrate 1 and the size thereof is properly selected corresponding to the film thickness. Furthermore, the ringlike jigs 4 are formed almost in the same shape as that of the processed substrate 1 so that the film may be made thicker when the opposite parts do not use the ringlike jigs 4.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a single-wafer vapor phase growth method, and in particular, in a semiconductor manufacturing apparatus, it is possible to form a film having good in-plane film thickness uniformity on a substrate to be processed. The present invention relates to a vapor growth method.

[0002]

2. Description of the Related Art In recent years, with the increase in size of semiconductor substrates to be processed, it has become necessary to process the semiconductor substrates one by one, and a single-wafer heat treatment apparatus is widely used for this purpose. As shown in FIG. 5, the conventional single-wafer vapor phase growth method is as follows.
A support 11 capable of rotating the substrate 1 in the processing chamber-5.
It was carried out by a method in which the substrate was heated by the lamp 2 from the outside of the processing chamber-5, a gas was caused to flow into the processing chamber-5, and vapor-phase growth was performed on the substrate.

However, in the above-mentioned conventional film forming method, when the kind of film forming or a plurality of gases are made to flow at the same time, the film thickness distribution may become thicker at the periphery and thin at the central portion depending on the flow rate ratio. However, there is a problem that a highly accurate film forming process cannot be performed. In the case of the single-wafer vapor phase growth method, since the substrate to be processed is large, nonuniformity of the film thickness distribution becomes a problem.

[0004]

SUMMARY OF THE INVENTION The present invention has been made in order to solve the problems of the conventional single-wafer vapor phase growth method, and is to form a uniform thin film on a substrate to be processed. It is an object of the present invention to provide a vapor phase growth method capable of performing the above.

[0005]

In order to achieve the above object, the inventors of the present invention have conducted extensive studies, and as a result, in a single-wafer heat treatment apparatus, a ring-shaped jig formed of a heat-resistant material was used.
The inventors have found that a uniform thin film can be formed on a substrate to be processed by arranging it with a space from the substrate to be processed and growing the substrate to be processed by vapor phase growth, and reached the present invention.

That is, according to the present invention, a single-wafer type vapor phase growth in which a substrate to be processed is housed in a processing chamber, a reaction gas is supplied into the processing chamber, and the substrate to be processed is heated to perform vapor phase growth. In the method, a ring-shaped jig formed of a heat-resistant material is arranged facing the growth surface of the substrate to be processed with a space between the substrate and the substrate to be processed, and vapor phase growth is performed on the substrate to be processed. .

It is considered that the cause of the effect of the present invention is that the ring-shaped jig decomposes and consumes part of the gas and that the ring-shaped jig suppresses radiant heat. The ring-shaped jig of the present invention is formed of a heat resistant material such as quartz or ceramic. In the ring-shaped jig of the present invention, by intentionally forming fine irregularities on the surface by sandblasting,
It is particularly preferable because it increases the decomposition consumption of gas.

[0008]

Embodiments of the present invention will now be described with reference to the drawings. FIG. 1 is a plan view showing an embodiment of the present invention, in which a substrate 1 to be processed is supported in a processing chamber 5 by a rotatable support member 11, and a rear surface is provided from above and below the processing chamber-5. Infrared lamp 2 provided with reflector 3 on substrate 1 to be processed
Is heated and a reaction gas is introduced into the processing chamber-5 as indicated by an arrow, and the reaction chamber-5 is introduced as indicated by an arrow.
It is designed to be discharged outside.

Above the growth surface of the substrate 1 to be processed, ring-shaped jigs 4 are fixed at intervals. Ring jig 4
Is fixed so as to face a portion where the outer peripheral portion of the substrate to be processed 1 becomes thicker, and its size is appropriately selected and used according to the size of the portion where the film becomes thicker. As shown in FIG. 3, the ring-shaped jig 4 is formed in substantially the same shape as the substrate 1 to be processed,
The facing portion 10 is a portion where the film becomes thick when the ring-shaped jig 4 is not used.

In the above embodiment, the support 11 has
Since the rotating shaft 8 which is rotated by the rotating mechanism 6 is integrally connected, the substrate 1 to be processed can be rotated during film formation. In the above embodiment, the support tool 11 has three rods continuously arranged in the horizontal direction from the tip of the rotary shaft 8 at equal intervals, and the tip of the rod is bent so as to stand upright. In the above-described embodiment, the substrate 1 to be processed is supported by the support tool 11, but as shown in FIG. 2, it may of course be supported by the heat equalizing plate (susceptor) 7 mounted on the support tool 11. .

The heating by the infrared lamp 2 may be performed either on the upper side or the lower side, and the heating source is not limited to the infrared lamp 2 and the resistance heating heater 9 as shown in FIG.
But it doesn't matter. When heating by the infrared lamp 2, as shown in FIGS. 1 and 2, at least one of the upper and lower infrared lamps 2 is a concentric ring-shaped infrared lamp and the substrate direction is increased toward the outside. It is preferable to dispose a plurality of them so as to be inclined from the viewpoint of forming a uniform thin film on the substrate. For the same reason, even when the resistance heating heater 9 is used, it is preferable to dispose the resistance heating heater 9 so as to incline toward the substrate as it goes outward, as shown in FIG. In the above-mentioned embodiment, the reaction gas is flown in parallel to the substrate 1 to be processed, but this is a shower of the reaction gas.
It may be supplied through a dispersion plate such as a head.

[0012]

[Function] As shown by an arrow in FIG. 1, a reaction gas is introduced,
Since the ring-shaped jig 4 is opposed to the portion where the film on the outer peripheral portion of the substrate 1 becomes thicker when vapor-phase grown by a conventional method,
The reaction gas in that portion is consumed by decomposition, and heating is suppressed by the shielding effect of the radiant heat from the infrared lamp 2 by the ring-shaped jig 4, so that the density of the reaction gas and the in-plane temperature distribution of the substrate are controlled. The process controllability can be remarkably enhanced. Therefore, by optimizing the size of the ring-shaped jig 4 and the distance from the substrate, the degree of film growth suppression can be optimized, and a uniform thin film can be formed on the substrate 1.

[0013]

As described above, according to the present invention, the size of the ring-shaped jig and the distance to the substrate to be processed which are arranged so as to face the substrate to be processed are set to the extent that the peripheral portion becomes thicker. By optimizing according to the above, it is possible to form a film with a very good in-plane film thickness distribution, and because it is highly reproducible even when processing a large number of substrates, it is possible to achieve high accuracy in actual production. It shows a tremendous effect not seen in the conventional vapor phase growth method of this kind, such as achieving uniform film formation.

[0014]

[Brief description of drawings]

FIG. 1 is a vertical sectional view showing an embodiment of the present invention.

FIG. 2 is a vertical sectional view showing another embodiment of the present invention.

3 is a cross-sectional view of FIG.

FIG. 4 is a vertical sectional view showing another embodiment of the present invention.

FIG. 5 is a vertical cross-sectional view showing a conventional vapor phase growth apparatus.

[Explanation of symbols]

 1 substrate to be processed 2 infrared lamp 4 ring-shaped jig 5 processing chamber-

Claims (5)

[Claims] 1. A substrate to be processed is accommodated in a processing chamber,
In a single-wafer vapor phase growth method in which a reactive gas is supplied into the processing chamber and the substrate to be processed is heated to perform vapor phase growth, a heat-resistant material is used to face the growth surface of the substrate to be processed. A vapor phase growth method, characterized in that the formed ring-shaped jig is arranged so as to be spaced apart from the substrate to be processed and vapor-phase grown on the substrate to be processed. 2. The growth method according to claim 1, wherein fine irregularities are intentionally formed on the surface of the ring-shaped jig. 3. The growth method according to claim 1, wherein the substrate is heated by radiant heat from the outside of the processing chamber. 4. An outer shape of the ring-shaped jig and an outer shape of the substrate to be processed are substantially matched with each other, and the ring-shaped jig is arranged so as to face a portion where the film thickness of the substrate to be processed becomes thick. The growing method according to claim 1. 5. The growth method according to claim 1, wherein a heating source for heating the substrate to be processed outside the processing chamber is arranged so as to be inclined toward the substrate toward the outside.