JP2005161245A - Film forming method, film forming apparatus, and element - Google Patents

Film forming method, film forming apparatus, and element Download PDF

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JP2005161245A
JP2005161245A JP2003405930A JP2003405930A JP2005161245A JP 2005161245 A JP2005161245 A JP 2005161245A JP 2003405930 A JP2003405930 A JP 2003405930A JP 2003405930 A JP2003405930 A JP 2003405930A JP 2005161245 A JP2005161245 A JP 2005161245A
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film
substrate
liquid
liquid film
solvent
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JP4495955B2 (en
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Masato Ikegawa
正人 池川
Hironobu Yamakawa
寛展 山川
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Hitachi Ltd
Japan Display Inc
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Hitachi Displays Ltd
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<P>PROBLEM TO BE SOLVED: To provide a film forming technique capable of improving the capability of an element provided with a film having a function on the surface of a substrate. <P>SOLUTION: The film forming method is employed for forming the thin film 13 on the surface of the substrate 1 by ejecting drops containing materials forming the film 13 toward the surface of the substrate 1 to make a solvent evaporate from a liquid film 7 formed on the surface of the substrate 1. According to the film forming method, when the solvent evaporated from the liquid film 7, an evaporation amount reducing means for reducing the amount of evaporation of the solvent at a peripheral edge portion 7a of the liquid film 7 is used, and when the solvent is evaporated from the liquid film 7, the liquid film 7 is heated with a heating source 9 positioned at the liquid film 7 side. The evaporation amount reducing means is positioned between the heating source 9 and the liquid film 7, and is a frame-like mask member 11 covering the peripheral edge portion 7a of the liquid film 7. Thereby, the reduction of the evaporation amount of the solvent at the peripheral edge portion 7a of the liquid film 7 controls the coffee stain phenomenon, and uniformizes the thickness of the film. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、画像表示素子や半導体素子などを形成するための基板の面への機能性を有する膜の形成技術に関する。   The present invention relates to a technique for forming a film having functionality on a surface of a substrate for forming an image display element, a semiconductor element, or the like.

半導体や液晶ディスプレイなどのレジスト膜、また、液晶ディスプレイなどの配向膜やカラーフィルターとなる膜などを平坦な基板の面に形成する方法として、半導体や液晶ディスプレイなどのレジスト膜ではスピンコーティング法が、液晶ディスプレイの配向膜などではフレキソ印刷法などが用いられている。これらの膜形成方法では、膜を形成する際に使用した材料のうち、実際に膜となる材料の率、つまり材料の利用率が低いため、新しい膜の形成方法の開発が要望されている。   As a method for forming a resist film such as a semiconductor or a liquid crystal display, an alignment film such as a liquid crystal display, or a film serving as a color filter on a flat substrate surface, a spin coating method is used for a resist film such as a semiconductor or liquid crystal display. A flexographic printing method is used for an alignment film of a liquid crystal display. In these film forming methods, among the materials used for forming the film, since the rate of the material that actually becomes the film, that is, the utilization rate of the material is low, development of a new film forming method is desired.

一方、例えば、高分子系有機EL素子などのように、基板に形成されたバンクによって囲まれた複数の穴の各々の底面に膜を形成するための膜形成方法として、インクジェット法などの、膜を形成する材料を含む液滴を基板に設けられた穴の低面に向けて吐出して膜を形成する膜形成方法が提案されている(例えば、特許文献1参照)。このような膜形成方法では、膜を形成する材料を溶媒に、例えば数%といった濃度で溶かした液体の液滴を、インクジェットノズルなどから吐出して基板の底面に着弾させ、溶媒を蒸発させることで膜を作成する。また、インクジェット法は、膜を微細かつ容易にパターニングできることからも注目されている。   On the other hand, as a film forming method for forming a film on the bottom surface of each of a plurality of holes surrounded by a bank formed on a substrate, such as a polymer organic EL element, a film such as an inkjet method is used. There has been proposed a film forming method for forming a film by discharging droplets containing a material for forming a film toward a lower surface of a hole provided in a substrate (see, for example, Patent Document 1). In such a film forming method, a liquid droplet dissolved in a concentration of, for example, several percent in a material for forming a film is discharged from an inkjet nozzle or the like to land on the bottom surface of the substrate, and the solvent is evaporated. Create a membrane with The inkjet method is also attracting attention because the film can be finely and easily patterned.

そこで、このような膜形成方法を、半導体や液晶ディスプレイなどのレジスト膜、また、液晶ディスプレイなどの配向膜やカラーフィルターとなる膜など、平坦な基板の面に膜を形成する膜形成方法にも適用することが考えられている。   Therefore, such a film forming method is also applied to a film forming method for forming a film on a flat substrate surface such as a resist film such as a semiconductor or a liquid crystal display, an alignment film such as a liquid crystal display, or a film serving as a color filter. It is considered to apply.

ところが、膜を形成する材料を含む液滴を基板の面に吐出して基板の面に膜を形成する膜形成方法では、膜厚を制御し難く、膜の厚みを均一化した平坦な膜を形成することが困難である。つまり、平坦な基板の面の所定の領域に液滴を着弾させて膜を形成する場合、着弾した液滴により形成された液膜の状態では均一な厚みになっていても、この液膜から溶媒が蒸発し乾燥する際、溶媒に溶解していた溶質である膜の材料が、形成されている膜の周縁部に集積し、膜の周縁部の膜厚が他の部分よりも厚くなり、平坦な膜が形成されないという問題がある。   However, in a film formation method in which a film containing a material for forming a film is discharged onto the surface of the substrate to form the film on the surface of the substrate, it is difficult to control the film thickness, and a flat film with a uniform film thickness is formed. It is difficult to form. In other words, when a film is formed by landing droplets on a predetermined area of the surface of a flat substrate, even if the liquid film formed by the landed liquid droplets has a uniform thickness, When the solvent evaporates and dries, the film material, which is a solute dissolved in the solvent, accumulates at the periphery of the formed film, and the film thickness at the periphery of the film becomes thicker than other parts, There is a problem that a flat film is not formed.

これは、「コーヒーリング」または「コーヒーステイン」と呼ばれる現象であり、溶質を溶媒に溶解させた液滴を乾燥させる際に発生する現象である。すなわち、基板に広がった液膜の外縁部つまり周縁部の蒸発量が他の部分よりも多いため、それを補うように液が周縁部に向かって流れ、その結果、乾燥後、周縁部が盛り上がった膜が形成される現象である(例えば、非特許文献1参照)。   This is a phenomenon called “coffee ring” or “coffee stain”, and is a phenomenon that occurs when a droplet in which a solute is dissolved in a solvent is dried. That is, the amount of evaporation at the outer edge of the liquid film spread on the substrate, that is, the peripheral edge, is larger than that at other parts, so that the liquid flows toward the peripheral edge to compensate for it, and as a result, the peripheral edge rises after drying. This is a phenomenon in which a thick film is formed (see Non-Patent Document 1, for example).

これに対し、特許文献1に記載されているような膜形成方法では、溶質つまり膜を形成する材料の濃度が異なる2種類の液滴を2回に分けて基板に着弾させることで形成された膜の厚みを均一化しようとしている。この膜形成方法では、最初に所定の濃度の液滴を基板に着弾させ、その後、最初に着弾させた液滴の濃度以下の液滴を、最初に着弾させた液滴により形成された液膜上に着弾させている。また、多くの塗料などでは、このようなコーヒーステイン現象が生じないような材料が選ばれ、製品化されている。例えば、墨汁は膠が混入されているため、乾燥とともにゲル化し、液が移動しづらくなっており、コーヒーステイン現象は生じ難い。   On the other hand, in the film forming method described in Patent Document 1, two types of liquid droplets having different concentrations of the solute, that is, the material forming the film are divided into two portions and formed on the substrate. We are trying to make the thickness of the film uniform. In this film forming method, a droplet having a predetermined concentration is first landed on the substrate, and then a liquid film formed by the first landed droplet is equal to or lower than the concentration of the initially landed droplet. It ’s landing on the top. In many paints, materials that do not cause such a coffee stain phenomenon are selected and commercialized. For example, since the ink is mixed with glue, it gels with drying, and the liquid is difficult to move, and the coffee stain phenomenon hardly occurs.

特開2001−291583号公報(第3頁、第1−5図)Japanese Patent Laid-Open No. 2001-291583 (page 3, FIG. 1-5) NATURE、389巻、1997年、p.827NATURE, 389, 1997, p.827

ところで、基板の面に機能を有する膜を設けた半導体素子や液晶ディスプレイの画像素子などといった素子においては、その素子の性能を向上するために、形成する膜を平坦化する必要がある。このため、できるだけ膜を平坦化するために特許文献1のような膜形成方法が提案されている。しかし、特許文献1に記載されているような膜形成方法では、2回に分けて液滴を着弾させて膜を形成するため、1回目に形成された液膜と2回目に形成された液膜とが混ざらないため、各々の液滴によって形成される膜の間に界面が生じ易くなる。形成された膜の間に界面が生じると、膜を平坦化して素子の性能を向上しようとしているにもかかわらず、この界面によって素子の性能が低下してしまい、素子の性能を向上できなくなってしまう。また、乾燥とともに液がゲル化し、液が移動しづらくなる成分を液滴に含ませることでも、膜に夾雑物が含まれた状態となることによって、膜を平坦化して素子の性能を向上しようとしているにもかかわらず、やはり、素子の性能を向上できなくなってしまう場合がある。   Incidentally, in an element such as a semiconductor element provided with a film having a function on the surface of a substrate or an image element of a liquid crystal display, it is necessary to flatten the film to be formed in order to improve the performance of the element. For this reason, in order to make the film as flat as possible, a film forming method as in Patent Document 1 has been proposed. However, in the film forming method described in Patent Document 1, the liquid film formed in the first time and the liquid formed in the second time are formed because the film is formed by landing droplets in two times. Since the film is not mixed with each other, an interface is easily generated between the films formed by the respective droplets. When an interface is formed between the formed films, the device performance is deteriorated due to the interface even though the film is being flattened to improve the element performance. End up. Also, letting the liquid gel when it dries and the droplets contain components that make it difficult for the liquid to move, so that the film can be made to contain impurities, thereby flattening the film and improving device performance. In spite of this, the performance of the device may not be improved.

本発明の課題は、基板の面に機能を有する膜を設けた素子の性能を向上することにある。   The subject of this invention is improving the performance of the element which provided the film | membrane which has a function in the surface of a board | substrate.

本発明の膜形成方法は、膜を形成する材料を含む液滴を基板の面に向けて吐出することでこの基板の面に形成された液膜から溶媒を蒸発させ、この基板の面に膜を形成する膜形成方法であり、液膜から溶媒を蒸発させるとき、この液膜の周縁部での溶媒の蒸発量を低減する蒸発量低減手段を用いることにより上記課題を解決する。   The film forming method of the present invention evaporates the solvent from the liquid film formed on the surface of the substrate by ejecting droplets containing the material forming the film toward the surface of the substrate, and the film is formed on the surface of the substrate. When the solvent is evaporated from the liquid film, the above problem is solved by using an evaporation amount reducing means for reducing the evaporation amount of the solvent at the peripheral edge of the liquid film.

そして、液膜から溶媒を蒸発させるとき、この液膜側に位置する熱源によりこの液膜に熱をかけ、蒸発量低減手段は、熱源と液膜との間に位置し、この液膜の周縁部を覆う枠状のマスク部材である膜形成方法とする。これにより、液膜の周縁部が加熱され難くなり溶媒の蒸発量が低減するため、他の部分との蒸発量が均一化され、形成された膜の厚みが均一化される。したがって、2回に分けて液滴を着弾させることも、液が移動しづらくなる成分を含ませることもなく形成された膜の厚みを均一化できるため、界面が生じ難く、また、夾雑物を含むこともないため、基板の面に機能を有する膜を設けた素子の性能を向上できる。   Then, when evaporating the solvent from the liquid film, heat is applied to the liquid film by a heat source located on the liquid film side, and the evaporation amount reducing means is located between the heat source and the liquid film, and the periphery of the liquid film The film forming method is a frame-like mask member that covers the portion. As a result, the peripheral portion of the liquid film becomes difficult to be heated and the evaporation amount of the solvent is reduced, so that the evaporation amount with other portions is made uniform and the thickness of the formed film is made uniform. Therefore, it is possible to equalize the thickness of the formed film without landing the component in two steps, and without including the component that makes the liquid difficult to move, so that the interface is difficult to occur, and impurities Since it is not included, the performance of the element provided with a functional film on the surface of the substrate can be improved.

また、蒸発量低減手段は、液膜の周縁部に対応する基板の面部分に設けられ、液滴をはじく發液処理が施された發液処理部である膜形成方法とする。これにより、液膜の周縁部と基板の面との接触角が大きくなり、液膜の周縁部での溶媒の蒸発量が低減するため、他の部分との蒸発量が均一化され、形成された膜の厚みが均一化される。したがって、2回に分けて液滴を着弾させることも、液が移動しづらくなる成分を含ませることもなく形成された膜の厚みを均一化できるため、界面が生じ難く、また、形成された膜が夾雑物を含むこともないため、基板の面に機能を有する膜を設けた素子の性能を向上できる。   Further, the evaporation amount reducing means is a film forming method which is provided in the surface portion of the substrate corresponding to the peripheral portion of the liquid film, and is a liquid processing unit which has been subjected to liquid processing to repel droplets. As a result, the contact angle between the periphery of the liquid film and the surface of the substrate is increased, and the amount of evaporation of the solvent at the periphery of the liquid film is reduced, so that the evaporation amount with other parts is made uniform. The thickness of the film is made uniform. Therefore, it is possible to equalize the thickness of the formed film without landing the component in two steps, and without including a component that makes it difficult for the liquid to move. Since the film does not contain impurities, the performance of an element provided with a film having a function on the surface of the substrate can be improved.

さらに、發液処理部により液膜と基板の面との接触角が90度以上となる膜形成方法とすれば、厚みをより均一化できる。   Furthermore, if the film forming method is such that the contact angle between the liquid film and the surface of the substrate is 90 degrees or more by the liquid-treatment part, the thickness can be made more uniform.

また、蒸発量低減手段は、液膜の周縁部に対応する基板の面部分に枠状に形成した溝である膜形成方法とする。これにより、液膜の周縁部が溝中に位置することによって、溝内に蒸発した溶媒が滞留して溝内の空間の蒸気密度が上昇し、液膜の周縁部での溶媒の蒸発量が低減するため、他の部分との蒸発量が均一化され、形成された膜の厚みが均一化される。したがって、2回に分けて液滴を着弾させることも、液が移動しづらくなる成分を含ませることもなく形成された膜の厚みを均一化できるため、界面が生じ難く、また、夾雑物を含むこともないため、基板の面に機能を有する膜を設けた素子の性能を向上できる。   Further, the evaporation amount reducing means is a film forming method which is a groove formed in a frame shape on the surface portion of the substrate corresponding to the peripheral portion of the liquid film. As a result, when the peripheral edge of the liquid film is located in the groove, the evaporated solvent stays in the groove, the vapor density of the space in the groove increases, and the amount of solvent evaporation at the peripheral edge of the liquid film increases. In order to reduce, the amount of evaporation with other parts is made uniform, and the thickness of the formed film is made uniform. Therefore, it is possible to equalize the thickness of the formed film without landing the component in two steps, and without including the component that makes the liquid difficult to move, so that the interface is difficult to occur, and impurities Since it is not included, the performance of the element provided with a functional film on the surface of the substrate can be improved.

さらに、基板の面に膜を形成するための膜形成装置であり、基板の面に向けて吐出した膜を形成する材料を含む液滴によって基板の面に形成される液膜に対し、この液膜側から熱をかける熱源と、この熱源と基板の面に形成される液膜との間に位置し、基板の面に形成される液膜の周縁部を覆う枠状のマスク部材とを備えた構成の膜形成装置とする。このような構成の膜形成装置を用いれば、マスク部材により液膜の周縁部が加熱され難くなり溶媒の蒸発量が低減するため、他の部分との蒸発量が均一化され、形成された膜の厚みが均一化される。したがって、2回に分けて液滴を着弾させることも、液が移動しづらくなる成分を含ませることもなく形成された膜の厚みを均一化できるため、界面が生じ難く、また、夾雑物を含むこともないため、基板の面に機能を有する膜を設けた素子の性能を向上できる。   Furthermore, it is a film forming apparatus for forming a film on the surface of the substrate, and this liquid is formed on the liquid film formed on the surface of the substrate by droplets containing a material that forms the film discharged toward the surface of the substrate. A heat source that applies heat from the film side, and a frame-shaped mask member that is positioned between the heat source and a liquid film formed on the surface of the substrate and covers a peripheral portion of the liquid film formed on the surface of the substrate The film forming apparatus having the above configuration is used. If the film forming apparatus having such a configuration is used, the peripheral portion of the liquid film is not easily heated by the mask member, and the amount of evaporation of the solvent is reduced, so that the amount of evaporation with other portions is made uniform and formed. Is made uniform. Therefore, it is possible to equalize the thickness of the formed film without landing the component in two steps, and without including the component that makes the liquid difficult to move, so that the interface is difficult to occur, and impurities Since it is not included, the performance of the element provided with a functional film on the surface of the substrate can be improved.

また、基板の面に機能を有する膜が設けられた素子であり、基板は、膜が形成された面のこの膜の周縁部に対応する部分に、膜を形成するために基板に着弾させる膜を形成する材料を含む液滴をはじく發液処理が施された發液処理部を有している構成の素子とする。さらに、基板の面に機能を有する膜が設けられた素子であり、基板は、膜が形成された面の膜の周縁部に対応する部分に溝を有している構成の素子とする。これらのような構成の素子であれば、膜の厚みが均一化されているため、性能を向上できる。   Further, the element is provided with a film having a function on the surface of the substrate, and the substrate is a film that is landed on the substrate in order to form a film on a portion corresponding to the peripheral portion of the film on the surface on which the film is formed. The element is configured to have a soot treatment portion that has been subjected to a soot treatment that repels droplets containing a material that forms the material. Further, the element is provided with a film having a function on the surface of the substrate, and the substrate is an element having a groove in a portion corresponding to the peripheral portion of the film on the surface on which the film is formed. In the case of an element having such a configuration, the film thickness is made uniform, so that the performance can be improved.

本発明によれば、基板の面に機能を有する膜を設けた素子の性能を向上できる。   ADVANTAGE OF THE INVENTION According to this invention, the performance of the element which provided the film | membrane which has a function on the surface of a board | substrate can be improved.

以下、本発明を適用してなる膜形成技術の第1の実施形態について図1乃至図4を参照して説明する。図1は、本発明を適用してなる膜形成方法において、インクジェットノズルにより液滴を基板に着弾させている状態を模式的に示す断面図である。図2は、本発明を適用してなる膜形成方法において、基板に着弾した液滴が基板上に液膜を形成した状態を模式的に示す断面図である。図3は、本発明を適用してなる膜形成方法において、熱源となる光源とマスク部材を備えた膜形成装置を用い、基板上に形成された液膜の溶媒を蒸発させて膜を形成している状態を模式的に示す断面図である。図4は、図3のIV−IV線からの矢視図である。   A first embodiment of a film forming technique to which the present invention is applied will be described below with reference to FIGS. FIG. 1 is a cross-sectional view schematically showing a state in which droplets are landed on a substrate by an ink jet nozzle in a film forming method to which the present invention is applied. FIG. 2 is a cross-sectional view schematically showing a state in which a liquid film is formed on a substrate by droplets that have landed on the substrate in a film forming method to which the present invention is applied. FIG. 3 shows a film forming method to which the present invention is applied, and a film is formed by evaporating the solvent of the liquid film formed on the substrate using a film forming apparatus having a light source as a heat source and a mask member. It is sectional drawing which shows typically the state which is. FIG. 4 is an arrow view from the line IV-IV in FIG.

本実施形態の膜形成方法では、まず、図1に示すように、インクジェットにより、膜を形成する材料を溶質として溶媒に溶解または分散させて形成した液(以下、インク組成物と称する)を基板1の面に向けて吐出して着弾させ、着弾した液滴3により基板1の面上に液膜を形成する液膜形成工程を行う。液膜形成工程では、複数のノズル5aが設けられたインクジェットヘッド5から、各々、インク組成物の液滴5を基板1の面に向かって吐出し、基板1の面上に滴下する。インクジェットのノズル5aから吐出されるインク組成物の量つまり液滴量は、ノズル5aの径と圧力パルスの設計より、例えば数pLから数百pLの範囲で調整できる。   In the film forming method of this embodiment, first, as shown in FIG. 1, a liquid (hereinafter referred to as an ink composition) formed by dissolving or dispersing a material for forming a film as a solute in a solvent by an ink jet is used as a substrate. A liquid film forming step of forming a liquid film on the surface of the substrate 1 by the droplets 3 discharged and landed on the surface of the substrate 1 is performed. In the liquid film forming step, each of the ink composition droplets 5 is ejected from the inkjet head 5 provided with a plurality of nozzles 5 a toward the surface of the substrate 1 and dropped onto the surface of the substrate 1. The amount of ink composition discharged from the inkjet nozzle 5a, that is, the amount of droplets, can be adjusted in the range of several pL to several hundred pL, for example, depending on the diameter of the nozzle 5a and the design of the pressure pulse.

基板1の面は、着弾した液滴5を広げやすくするため、インク組成物に対して濡れ性が良くなるように処理し調整されているため、基板1の面に着弾した液滴3は、基板1の面上で拡がり、図2に示すように、着弾した隣り合う液滴3同士が合体し、基板1の面のほぼ全体を覆う液膜7となる。このように、液膜形成工程でインクジェットを用いて液膜7を形成した後、形成した液膜7から溶媒を蒸発させる乾燥工程を行う。   The surface of the substrate 1 is processed and adjusted so as to improve the wettability with respect to the ink composition in order to make the landed droplets 5 easier to spread. As shown in FIG. 2, the liquid droplets 7 that spread on the surface of the substrate 1 and that have landed adjacent to each other merge to form a liquid film 7 that covers almost the entire surface of the substrate 1. Thus, after forming the liquid film 7 using an inkjet in a liquid film formation process, the drying process which evaporates a solvent from the formed liquid film 7 is performed.

乾燥工程を行うとき、液膜7の外周部つまり周縁部7aにおける基板1との接触線での接触角は、基板1の面がインク組成物に対して濡れ性が良くなるように処理されているため、90度以下になっている。このような状態の液膜7が形成された基板1に対し、膜形成装置を用いて乾燥工程を行い、液膜7中の溶媒を蒸発させて乾燥させる。乾燥工程で用いる膜形成装置は、図3に示すように、基板1の液膜7が形成された面に光を照射する光源9、そして、光源9と基板1との間に位置するマスク部材11を有している。   When the drying process is performed, the contact angle at the contact line with the substrate 1 at the outer peripheral portion of the liquid film 7, that is, the peripheral portion 7 a is processed so that the wettability of the surface of the substrate 1 to the ink composition is improved. Therefore, it is 90 degrees or less. The substrate 1 on which the liquid film 7 in such a state is formed is subjected to a drying process using a film forming apparatus, and the solvent in the liquid film 7 is evaporated and dried. As shown in FIG. 3, the film forming apparatus used in the drying process includes a light source 9 that irradiates light onto the surface of the substrate 1 on which the liquid film 7 is formed, and a mask member positioned between the light source 9 and the substrate 1. 11.

本実施形態の光源9は、複数のランプ9aを有しており、基板1の液膜7が形成された面全体に光を照射し、液膜7を加熱するものである。また、光源9は、本実施形態のように必要な光の照射方向以外の方向のランプ9aの部分を覆い、光を反射する反射板9bなどを備えた光の照射方向に方向性、指向性を有するものを用いた方が光の照射効率、つまり液膜7からの溶媒の蒸発効率を向上できる。マスク部材11は、図3及び図4に示すように、基板1の面に形成された液膜7の周縁部7aに対応する形状で光つまり熱を遮蔽する遮蔽部11aを有する平板枠状の部材であり、遮蔽部11aは、光を透過しない材料であると共に、断熱性を有する材料または熱伝導性が比較的低い材料で形成されている。本実施形態では、矩形の基板1を用いて素子を形成するため、マスク部材11の穴部分つまり遮蔽部11aの内側部分も基板1の形状に対応する矩形状になっている。   The light source 9 of the present embodiment has a plurality of lamps 9a, and irradiates the entire surface of the substrate 1 on which the liquid film 7 is formed to heat the liquid film 7. In addition, the light source 9 covers a portion of the lamp 9a in a direction other than the necessary light irradiation direction as in the present embodiment, and has directivity and directivity in the light irradiation direction including a reflection plate 9b that reflects the light. It is possible to improve the irradiation efficiency of light, that is, the evaporation efficiency of the solvent from the liquid film 7 by using the liquid crystal having the above. As shown in FIGS. 3 and 4, the mask member 11 has a flat frame shape having a shielding portion 11 a that shields light, that is, heat, in a shape corresponding to the peripheral portion 7 a of the liquid film 7 formed on the surface of the substrate 1. The shielding part 11a is a material that does not transmit light, and is formed of a material having heat insulation properties or a material having relatively low thermal conductivity. In this embodiment, since the element is formed using the rectangular substrate 1, the hole portion of the mask member 11, that is, the inner portion of the shielding portion 11 a has a rectangular shape corresponding to the shape of the substrate 1.

乾燥工程では、このような膜形成装置を用いることで、基板1上に形成された液膜7の周縁部7aへの光源9からの光の照射を遮断した状態、つまり、液膜7の周縁部7aへの光源9からの輻射熱を遮断した状態で基板1上に形成された液膜7が加熱される。このため、液膜7の周縁部7aでの溶媒の蒸発量がマスク部材11を設けていない場合に比べて低減し、液膜7の周縁部7aでの溶媒の蒸発量とマスク部材11で遮蔽されていない液膜7の他の部分の溶媒の蒸発量とが均一化する。このため、液膜7での溶媒の蒸発量の違いによる液の移動が生じず、図3に示すように、厚みが均一化された固形膜13が形成される。このように、本実施形態では、マスク部材11が、液膜7の周縁部7aでの溶媒の蒸発量を低減する蒸発量低減手段となり、また、光源9が、液膜7を加熱して液膜7から溶媒を蒸発させるための熱源となっている。   In the drying process, by using such a film forming apparatus, the irradiation of light from the light source 9 to the peripheral portion 7a of the liquid film 7 formed on the substrate 1 is blocked, that is, the peripheral edge of the liquid film 7 The liquid film 7 formed on the substrate 1 is heated in a state where the radiant heat from the light source 9 to the part 7a is blocked. For this reason, the evaporation amount of the solvent at the peripheral portion 7a of the liquid film 7 is reduced as compared with the case where the mask member 11 is not provided, and the evaporation amount of the solvent at the peripheral portion 7a of the liquid film 7 is shielded by the mask member 11. The amount of evaporation of the solvent in other portions of the liquid film 7 that has not been made uniform. For this reason, the movement of the liquid due to the difference in the amount of evaporation of the solvent in the liquid film 7 does not occur, and as shown in FIG. 3, the solid film 13 having a uniform thickness is formed. Thus, in this embodiment, the mask member 11 serves as an evaporation amount reducing means for reducing the evaporation amount of the solvent at the peripheral portion 7a of the liquid film 7, and the light source 9 heats the liquid film 7 to This is a heat source for evaporating the solvent from the film 7.

ところで、マスク部材11を用いない従来の膜形成技術では、図5に示すように、マスク部材11がないため、基板1上に形成された液膜7には、全体に光源9のランプ9aからの光が当たり、液膜7全体が加熱される。このため、液膜7の周縁部7aでは、図6に示すように、基板1の面と液膜7との接触角θが90度より小さい場合、液膜7の周縁部7aでの溶媒の蒸発量が液膜7の他の部分の蒸発量よりも大きくなるため、コーヒーステイン現象が起こる。つまり、従来の膜形成技術では、乾燥工程において、蒸発量が大きい液膜7の周縁部7a方向に溶質が移動して周縁部7aに溜り、最終的に形成された固形膜15は、図5及び図6に示すように、周縁部に盛り上がった隆起15aが形成された厚みの不均一な膜となる。   By the way, in the conventional film forming technique that does not use the mask member 11, as shown in FIG. 5, since there is no mask member 11, the liquid film 7 formed on the substrate 1 is entirely exposed to the lamp 9 a of the light source 9. , The entire liquid film 7 is heated. Therefore, at the peripheral edge 7a of the liquid film 7, as shown in FIG. 6, when the contact angle θ between the surface of the substrate 1 and the liquid film 7 is smaller than 90 degrees, the solvent at the peripheral edge 7a of the liquid film 7 Since the evaporation amount becomes larger than the evaporation amount of other portions of the liquid film 7, a coffee stain phenomenon occurs. That is, in the conventional film formation technique, in the drying process, the solute moves in the direction of the peripheral portion 7a of the liquid film 7 having a large evaporation amount and accumulates in the peripheral portion 7a. And as shown in FIG. 6, it becomes a film | membrane with an uneven thickness in which the protrusion 15a which swelled in the peripheral part was formed.

このように、コーヒーステイン現象は、液膜7の周縁部7aでの基板1の面と液膜7との接触角が90度より小さいとき、液膜7の周縁部7aでの蒸発速度が図6に示すように他の部分よりも大きくなることにより、その蒸発する液の量を補うために半径方向外側へ液が移動する結果、液膜7の周縁部7aに溶質が溜まり、液膜7の乾燥後、周縁部7aに相当する部分が盛り上がった膜形状になる現象である。   As described above, the coffee stain phenomenon is caused when the contact angle between the surface of the substrate 1 and the liquid film 7 at the peripheral edge 7a of the liquid film 7 is smaller than 90 degrees, the evaporation rate at the peripheral edge 7a of the liquid film 7 is increased. As shown in FIG. 6, when the liquid is larger than the other portions, the liquid moves outward in the radial direction to compensate for the amount of the evaporated liquid. As a result, the solute accumulates at the peripheral edge portion 7a of the liquid film 7, and the liquid film 7 This is a phenomenon in which the portion corresponding to the peripheral portion 7a becomes a raised film shape after drying.

これに対して、本実施形態の膜形成技術では、基板1の面に液滴3を着弾させることで基板1の面に形成した液膜7の周縁部7aがマスク部材11で遮蔽された状態で、光源9から光を当てて乾燥させている。このため、マスク部材11で遮蔽された液膜7の周縁部7aの蒸発速度が遮蔽されていない液膜7の他の部分より小さくなり、液膜7の周縁部7aでの蒸発量が低減されるため、コーヒーステイン現象の発生を抑制することができる。このように、2回に分けて液滴を着弾させることも、液が移動しづらくなる成分を含ませることもなく形成された膜の厚みを均一化できるため、界面が生じ難く、また、形成された膜が夾雑物を含むこともないため、基板の面に機能を有する膜を設けた素子の性能を向上できる。   On the other hand, in the film formation technique of the present embodiment, the peripheral portion 7 a of the liquid film 7 formed on the surface of the substrate 1 is blocked by the mask member 11 by landing the droplet 3 on the surface of the substrate 1. Thus, the light source 9 is irradiated with light and dried. For this reason, the evaporation rate of the peripheral portion 7a of the liquid film 7 shielded by the mask member 11 is smaller than other portions of the liquid film 7 that are not shielded, and the evaporation amount at the peripheral portion 7a of the liquid film 7 is reduced. Therefore, the occurrence of the coffee stain phenomenon can be suppressed. In this way, the droplets are landed in two steps, and the formed film thickness can be made uniform without including components that make it difficult for the liquid to move. Since the formed film does not include impurities, the performance of the element provided with a film having a function on the surface of the substrate can be improved.

さらに、本実施形態の膜形成技術によりレジスト膜を形成した半導体素子、また、レジスト膜、配向膜やカラーフィルターとなる膜などを形成した液晶ディスプレイなどの画像表示素子とすれば、各々の素子としての性能や電気的特性または光学的特性、加えて、半導体デバイスや液晶ディスプレイなどとしての性能や電気的特性または光学的特性を向上できる。   Furthermore, if it is set as image display elements, such as a semiconductor element which formed the resist film by the film formation technique of this embodiment, and the resist film, the alignment film, the film | membrane used as a color filter, etc., as each element In addition, the performance, electrical characteristics or optical characteristics of a semiconductor device or a liquid crystal display can be improved.

さらに、2回に分けて液滴を着弾させて膜を形成する膜形成方法では、インクジェットノズルから吐出する液滴の濃度を変化させる必要があるため、膜の形成作業が複雑になるが、本実施形態では、基板の面の1箇所の領域への液滴の吐出は1回で済み、また、インク組成物の濃度や組成の変更も必要ないため、膜の形成作業を簡素化でき、半導体素子や画像表示素子、さらに、半導体デバイスや液晶ディスプレイなどの生産性を向上できる。   Furthermore, in the film forming method in which the film is formed by landing the liquid droplets in two steps, it is necessary to change the concentration of the liquid droplets discharged from the inkjet nozzle, which makes the film forming operation complicated. In the embodiment, it is only necessary to discharge the liquid droplets to one region on the surface of the substrate, and it is not necessary to change the concentration or composition of the ink composition. The productivity of elements, image display elements, semiconductor devices, liquid crystal displays, and the like can be improved.

また、本実施形態では、熱源として光源9を用いている。しかし、熱源は、液膜7を加熱できれば、温風を発生する機器などを用いることもできる。   In the present embodiment, the light source 9 is used as a heat source. However, as long as the heat source can heat the liquid film 7, a device that generates warm air can be used.

(第2の実施形態)
以下、本発明を適用してなる膜形成技術の第2の実施形態について図7及び図8を参照して説明する。図7は、本発明を適用してなる膜形成方法において、發液処理部を設けた基板に形成された液膜の溶媒を蒸発させて膜を形成している状態を模式的に示す断面図である。図8は、基板の面と液膜との接触角に対する液膜の各部分での溶媒の蒸発量の関係を説明する図である。なお、本実施形態では、第1の実施形態と同一の構成などには同じ符号を付して説明を省略し、第1の実施形態と相違する点や特徴部などについて説明する。
(Second Embodiment)
Hereinafter, a second embodiment of a film forming technique to which the present invention is applied will be described with reference to FIGS. FIG. 7 is a cross-sectional view schematically showing a state in which a film is formed by evaporating the solvent of the liquid film formed on the substrate provided with the liquid treatment unit in the film forming method to which the present invention is applied. It is. FIG. 8 is a diagram for explaining the relationship of the evaporation amount of the solvent in each part of the liquid film with respect to the contact angle between the surface of the substrate and the liquid film. In the present embodiment, the same components as those in the first embodiment are denoted by the same reference numerals and description thereof will be omitted, and differences and features from the first embodiment will be described.

本実施形態の膜形成技術が第1の実施形態と相違する点は、液膜の周縁部での溶媒の蒸発量を低減する蒸発量低減手段としてマスク部材を用いず、基板の液膜の周縁部に対応する位置にインク組成物をはじく發液処理部を設け、この基板に設けた發液処理部を蒸発量低減手段としたことにある。すなわち、本実施形態では、図7に示すように、第1の実施形態で説明したような液膜形成工程及び乾燥工程を行う前に、素材となる基板の液膜7の周縁部7aに対応する部分に、液膜7を形成するインク組成物をはじく發液処理を施した發液処理部17を設けた基板19を作成する發液処理部形成工程を行う。したがって、發液処理部17は、基板19の面に形成しようとする膜の周縁部つまり外周の形状に沿った枠状に設けられている。   The film forming technique of the present embodiment is different from that of the first embodiment in that the mask member is not used as the evaporation amount reducing means for reducing the evaporation amount of the solvent at the peripheral portion of the liquid film, and the peripheral edge of the liquid film on the substrate. The liquid processing part which repels the ink composition is provided at a position corresponding to the part, and the liquid processing part provided on the substrate is used as the evaporation amount reducing means. That is, in this embodiment, as shown in FIG. 7, before performing the liquid film forming step and the drying step as described in the first embodiment, it corresponds to the peripheral portion 7a of the liquid film 7 of the substrate as a material. In the portion to be subjected to the above, a liquid crystal processing part forming step is carried out for producing a substrate 19 provided with a liquid crystal processing part 17 that has been subjected to a liquid crystal process that repels the ink composition that forms the liquid film 7. Therefore, the liquid-soaking process part 17 is provided in the frame shape along the peripheral part of the film | membrane which is going to form on the surface of the board | substrate 19, ie, the outer periphery shape.

發液処理部形成工程において基板19の發液処理部17を形成するための撥液処理の一例としては、インク組成物の溶媒が水性のものの場合、基板19の面上に拡がる液膜7の周縁部7aに対応する部分に撥水処理剤をコーティングする方法などがある。撥水処理剤としては、炭化水素系のワックスまたはシリコーンを用いることにより、容易に撥水効果を得られる。さらに、インク組成物の溶媒が油性のものの場合、ポリテトラフルオロエチレンなどのフッ素化合物を用いることにより、溶媒が油性の液に対しても撥液効果が得られる。また、パーフルオロ含有化合物を用いることにより、發液処理のコストを低減できる。他に、光照射によって基板19の面を表面活性するなどの方法を用いることもできる。例えば、4フッ化メタンを用いたプラズマ処理する方法を用いる場合、消耗されるものが気体なので後処理が容易となる。   As an example of the liquid repellent treatment for forming the liquid treatment part 17 of the substrate 19 in the liquid treatment part formation step, when the solvent of the ink composition is aqueous, the liquid film 7 spreading on the surface of the substrate 19 is used. There is a method of coating a water repellent agent on a portion corresponding to the peripheral edge portion 7a. As the water repellent treatment agent, a water repellent effect can be easily obtained by using hydrocarbon wax or silicone. Furthermore, when the solvent of the ink composition is oily, a liquid repellent effect can be obtained even when the solvent is oily by using a fluorine compound such as polytetrafluoroethylene. In addition, by using a perfluoro-containing compound, it is possible to reduce the cost of the liquid-soaking treatment. In addition, a method such as surface activation of the surface of the substrate 19 by light irradiation may be used. For example, in the case of using a plasma treatment method using tetrafluoromethane, post-treatment is facilitated because the consumed material is a gas.

このような發液処理部17を形成する發液処理部形成工程を行った基板19を用い、第1の実施形態で説明したように、液膜形成工程を行い、さらに、乾燥工程を行う。ただし、乾燥工程では、第1に実施形態で用いたマスク部材は用いる必要がない。   As described in the first embodiment, the liquid film forming step is performed and the drying step is further performed using the substrate 19 that has been subjected to the liquid processing portion forming step for forming such a liquid processing portion 17. However, in the drying process, it is not necessary to use the mask member used in the first embodiment.

ここで、發液処理部17を設けていない第1の実施形態と同様の状態の基板1の面と液膜7の周縁部7aとの接触角θに対する液膜7の溶媒の蒸発量の関係は、図8に示すようになっている。つまり、液膜7の周縁部7aでの溶媒の蒸発量は、接触角θの関数になっている。したがって、図8に示すように、液膜7の周縁部7aでの溶媒の蒸発量を液膜7の周縁部7a以外の各部分の蒸発量以下に確実に低減するためには、基板19に發液処理部17の面部分での液膜7の接触角が90度以上であることが望ましい。   Here, the relationship of the evaporation amount of the solvent of the liquid film 7 with respect to the contact angle θ between the surface of the substrate 1 and the peripheral edge portion 7a of the liquid film 7 in the same state as in the first embodiment in which the liquid treatment unit 17 is not provided. Is as shown in FIG. That is, the evaporation amount of the solvent at the peripheral portion 7a of the liquid film 7 is a function of the contact angle θ. Therefore, as shown in FIG. 8, in order to reliably reduce the evaporation amount of the solvent at the peripheral portion 7 a of the liquid film 7 to be equal to or less than the evaporation amount of each portion other than the peripheral portion 7 a of the liquid film 7, It is desirable that the contact angle of the liquid film 7 at the surface portion of the liquid-soaking unit 17 is 90 degrees or more.

なお、基板19の發液処理部17以外の面部分は、基板19の面に着弾した複数のインク組成物の液滴が拡がり液膜7になり易くするため、できるだけ液滴と基板19の面との接触角が90度より小さくなるように、つまり、濡れ性が良くなるように処理してある。   It should be noted that the surface portion of the substrate 19 other than the liquid-repellent processing unit 17 is such that the droplets of the plurality of ink compositions that have landed on the surface of the substrate 19 spread and easily form the liquid film 7. The contact angle is smaller than 90 degrees, that is, the wettability is improved.

このような本実施形態の膜形成技術でも、液膜7の周縁部7aと基板19の面との接触角θが大きくなり、液膜7の周縁部7aでの蒸発量が低減するため、他の部分との蒸発量が均一化され、形成された膜13の厚みが均一化される。したがって、第1の実施形態と同様に、基板の面に機能を有する膜を設けた素子の性能を向上できる。   Also in the film forming technique of this embodiment, the contact angle θ between the peripheral edge 7a of the liquid film 7 and the surface of the substrate 19 is increased, and the amount of evaporation at the peripheral edge 7a of the liquid film 7 is reduced. The amount of evaporation with this portion is made uniform, and the thickness of the formed film 13 is made uniform. Therefore, as in the first embodiment, the performance of an element provided with a film having a function on the surface of the substrate can be improved.

なお、図7では、發液処理部17の位置をわかりやすくするために、發液処理部17が基板19の面から突出した状態で描かれている。しかし、実際には、本実施形態に例示したような方法で發液処理部17を設けると、發液処理部17は、基板19の面からほとんど突出していないか、突出したとしても目視確認できない程度のものである。ただし、図7に示したように、發液処理部が基板19の面から突出した状態で設けることもできる。例えば、表面が發液性を有する部材を基板19の面に貼り付けることなどで、基板19の面に突出した發液処理部17を形成することもできる。また、發液処理部17は、基板19の面から突出している場合、または、突出していない場合のどちらの場合でも、液膜7を乾燥して膜13が形成された後、削って除去することもできる。   In FIG. 7, in order to easily understand the position of the liquid processing part 17, the liquid processing part 17 is drawn in a state of protruding from the surface of the substrate 19. However, in actuality, when the sessile liquid processing unit 17 is provided by the method illustrated in this embodiment, the smoky processing unit 17 hardly protrudes from the surface of the substrate 19 or cannot be visually confirmed even if it protrudes. It is about. However, as shown in FIG. 7, it is also possible to provide the soot processing part in a state of protruding from the surface of the substrate 19. For example, the liquid processing part 17 which protruded on the surface of the board | substrate 19 can also be formed by sticking the member which the surface has a liquid-liquid property on the surface of the board | substrate 19. In addition, the liquid processing unit 17 is removed by shaving and removing the liquid film 7 after the liquid film 7 is formed by drying the liquid film 7 in the case where the liquid film 7 protrudes from the surface of the substrate 19 or not. You can also

(第3の実施形態)
以下、本発明を適用してなる膜形成技術の第3の実施形態について図9及び図10を参照して説明する。図9は、本発明を適用してなる膜形成方法において、溝を設けた基板に形成された液膜の状態を模式的に示す断面図である。図10は、本発明を適用してなる膜形成方法において、溝を設けた基板に形成された液膜の状態を模式的に示す平面図である。なお、本実施形態では、第1及び第2の実施形態と同一の構成などには同じ符号を付して説明を省略し、第1及び第2の実施形態と相違する点や特徴部などについて説明する。
(Third embodiment)
Hereinafter, a third embodiment of a film forming technique to which the present invention is applied will be described with reference to FIGS. FIG. 9 is a cross-sectional view schematically showing a state of a liquid film formed on a substrate provided with a groove in a film forming method to which the present invention is applied. FIG. 10 is a plan view schematically showing a state of a liquid film formed on a substrate provided with a groove in a film forming method to which the present invention is applied. In the present embodiment, the same components and the like as those in the first and second embodiments are denoted by the same reference numerals, and the description thereof is omitted. Differences and features from the first and second embodiments are described. explain.

本実施形態の膜形成技術が第1及び第2の実施形態と相違する点は、液膜の周縁部での溶媒の蒸発量を低減する蒸発量低減手段としてマスク部材や基板に設けた發液処理部などを用いずに、基板の液膜の周縁部に対応する位置に溝を設け、この基板に形成した溝を蒸発量低減手段としたことにある。すなわち、本実施形態では、図9及び図10に示すように、第1の実施形態で説明したような液膜形成工程及び乾燥工程を行う前に、素材となる基板の液膜7の周縁部7aに対応する部分に溝21を設けて基板23を作成する溝形成工程を行う。したがって、溝21は、基板23の面に形成しようとする膜の周縁部つまり外周の形状に沿った枠状に設けられている。   The film forming technique of the present embodiment is different from the first and second embodiments in that the liquid solution provided on the mask member or the substrate as the evaporation amount reducing means for reducing the evaporation amount of the solvent at the peripheral portion of the liquid film. A groove is provided at a position corresponding to the peripheral edge of the liquid film on the substrate without using a processing unit or the like, and the groove formed on the substrate is used as an evaporation amount reducing means. That is, in this embodiment, as shown in FIGS. 9 and 10, before the liquid film forming process and the drying process as described in the first embodiment are performed, the peripheral portion of the liquid film 7 of the substrate as a material is used. A groove forming step for forming the substrate 23 by providing the groove 21 in the portion corresponding to 7a is performed. Therefore, the groove 21 is provided in a frame shape along the peripheral edge of the film to be formed on the surface of the substrate 23, that is, the outer periphery.

このような溝21を形成する溝形成工程を行った基板23を用い、第1の実施形態で説明したように、液膜形成工程を行い、さらに、乾燥工程を行う。ただし、乾燥工程では、第1に実施形態で用いたマスク部材は用いる必要がない。   Using the substrate 23 that has been subjected to the groove forming process for forming the groove 21 as described in the first embodiment, a liquid film forming process is performed, and a drying process is further performed. However, in the drying process, it is not necessary to use the mask member used in the first embodiment.

液膜形成工程で形成された液膜7の周縁部7aは、溝21の中に入り込んでいる。この状態で乾燥工程を行うと、溝21の中の空間が、溝21内以外の開放された空間に比べて狭いため、溝21内の空間の蒸発した溶媒の蒸気密度が高くなり、液膜7の周縁部7aの蒸発速度が低下する。   The peripheral edge portion 7 a of the liquid film 7 formed in the liquid film forming step enters the groove 21. When the drying process is performed in this state, the space in the groove 21 is narrower than the open space other than in the groove 21, so that the vapor density of the solvent evaporated in the space in the groove 21 is increased, and the liquid film 7 evaporates at the peripheral edge 7a.

このように、本実施形態のように、溝21を形成した基板23を用いることでも、溝21内に蒸発した溶媒が滞留して溝21内の空間の蒸気密度が上昇し、液膜7の周縁部7aでの溶媒の蒸発量が低減するため、第1及び第2の実施形態と同様に、基板の面に機能を有する膜を設けた素子の性能を向上できる。液膜7の周縁部7aの蒸発量を低減することができる。   As described above, even when the substrate 23 having the grooves 21 is used as in the present embodiment, the evaporated solvent stays in the grooves 21, the vapor density of the space in the grooves 21 increases, and the liquid film 7 Since the amount of evaporation of the solvent at the peripheral edge portion 7a is reduced, the performance of the element provided with a film having a function on the surface of the substrate can be improved as in the first and second embodiments. The amount of evaporation at the peripheral edge portion 7a of the liquid film 7 can be reduced.

なお、基板の形成する溝は、本実施形態のように、断面形状がV字状に限らず、矩形状、円形状など様々な断面形状で形成することができる。   In addition, the groove | channel which a board | substrate forms can be formed in various cross-sectional shapes, such as rectangular shape and circular shape, not only V-shaped cross-sectional shape like this embodiment.

また、第2及び第3の実施形態では、熱源を用いずに自然乾燥により溶媒を蒸発させることもできる。   In the second and third embodiments, the solvent can be evaporated by natural drying without using a heat source.

また、本発明は、基板上に機能性を有する膜を形成した様々な素子の製造に適用できる。   Further, the present invention can be applied to manufacturing various elements in which a functional film is formed on a substrate.

本発明を適用してなる第1の実施形態の膜形成方法において、インクジェットノズルにより液滴を基板に着弾させている状態を模式的に示す断面図である。It is sectional drawing which shows typically the state which made the droplet land on a board | substrate with the inkjet nozzle in the film formation method of 1st Embodiment formed by applying this invention. 本発明を適用してなる第1の実施形態の膜形成方法において、基板に着弾した液滴が基板上に液膜を形成した状態を模式的に示す断面図である。In the film formation method of a 1st embodiment formed by applying the present invention, it is a sectional view showing typically the state where the droplet which landed on the substrate formed the liquid film on the substrate. 本発明を適用してなる第1の実施形態の膜形成方法において、熱源となる光源とマスク部材を備えた膜形成装置を用い、基板上に形成された液膜の溶媒を蒸発させて膜を形成している状態を模式的に示す断面図である。In the film forming method of the first embodiment to which the present invention is applied, a film is formed by evaporating the solvent of the liquid film formed on the substrate using a film forming apparatus including a light source serving as a heat source and a mask member. It is sectional drawing which shows the state currently formed typically. 図3のIV−IV線からの矢視図である。It is an arrow view from the IV-IV line of FIG. 従来の膜形成方法を説明する断面図である。It is sectional drawing explaining the conventional film formation method. コーヒーステイン現象について説明する図であり、(a)は、円形の液膜を形成したときの液膜の中心から半径方向へ向かう各部分での溶媒の蒸発量を示す図であり、(b)は液膜の各部分での溶媒の蒸発量と形成される固形膜の形状を示す断面図である。It is a figure explaining a coffee stain phenomenon, (a) is a figure which shows the evaporation amount of the solvent in each part which goes to a radial direction from the center of a liquid film when forming a circular liquid film, (b) These are sectional drawings which show the amount of evaporation of the solvent in each part of the liquid film and the shape of the solid film to be formed. 本発明を適用してなる第2の実施形態の膜形成方法において、發液処理部を設けた基板に形成された液膜の溶媒を蒸発させて膜を形成している状態を模式的に示す断面図である。In the film formation method of 2nd Embodiment formed by applying this invention, the state which forms the film | membrane by evaporating the solvent of the liquid film formed in the board | substrate which provided the liquid-treatment process part is shown typically. It is sectional drawing. 基板の面と液膜との接触角に対する液膜の各部分での溶媒の蒸発量の関係を説明する図である。It is a figure explaining the relationship of the evaporation amount of the solvent in each part of a liquid film with respect to the contact angle of the surface of a board | substrate, and a liquid film. 本発明を適用してなる第3の実施形態の膜形成方法において、溝を設けた基板に形成された液膜の状態を模式的に示す断面図である。It is sectional drawing which shows typically the state of the liquid film formed in the board | substrate provided with the groove | channel in the film | membrane formation method of 3rd Embodiment formed by applying this invention. 本発明を適用してなる第3の実施形態の膜形成方法において、溝を設けた基板に形成された液膜の状態を模式的に示す平面図である。It is a top view which shows typically the state of the liquid film formed in the board | substrate provided with the groove | channel in the film forming method of 3rd Embodiment formed by applying this invention.

符号の説明Explanation of symbols

1 基板
7 液膜
7a 液膜の周縁部
9 光源
9a ランプ
11 マスク部材
13 固形膜
DESCRIPTION OF SYMBOLS 1 Board | substrate 7 Liquid film 7a The peripheral part of a liquid film 9 Light source 9a Lamp 11 Mask member 13 Solid film

Claims (7)

膜を形成する材料を含む液滴を基板の面に向けて吐出することで該基板の面に形成された液膜から溶媒を蒸発させ、該基板の面に膜を形成する膜形成方法であり、
前記液膜から溶媒を蒸発させるとき、該液膜の周縁部での溶媒の蒸発量を低減する蒸発量低減手段を用いる膜形成方法。
A film forming method for evaporating a solvent from a liquid film formed on a surface of the substrate by discharging droplets containing a material for forming the film toward the surface of the substrate to form a film on the surface of the substrate. ,
A film forming method using evaporation amount reducing means for reducing the evaporation amount of a solvent at a peripheral portion of the liquid film when the solvent is evaporated from the liquid film.
前記液膜から溶媒を蒸発させるとき、該液膜側に位置する熱源により該液膜に熱をかけ、前記蒸発量低減手段は、前記熱源と前記液膜との間に位置し、該液膜の周縁部を覆う枠状のマスク部材であることを特徴とする請求項1に記載の膜形成方法。 When evaporating the solvent from the liquid film, heat is applied to the liquid film by a heat source located on the liquid film side, and the evaporation amount reducing means is located between the heat source and the liquid film. The film forming method according to claim 1, wherein the film forming method is a frame-shaped mask member that covers a peripheral portion of the film. 前記蒸発量低減手段は、前記液膜の周縁部に対応する前記基板の面部分に設けられ、前記液滴をはじく發液処理が施された發液処理部であることを特徴とする請求項1に記載の膜形成方法。 The evaporation amount reducing means is a liquid processing unit provided on a surface portion of the substrate corresponding to a peripheral portion of the liquid film and subjected to liquid processing for repelling the droplets. 2. The film forming method according to 1. 前記蒸発量低減手段は、前記液膜の周縁部に対応する前記基板の面部分に枠状に形成した溝であることを特徴とする請求項1に記載の膜形成方法。 2. The film forming method according to claim 1, wherein the evaporation amount reducing means is a groove formed in a frame shape on a surface portion of the substrate corresponding to a peripheral edge portion of the liquid film. 基板の面に膜を形成するための膜形成装置であり、基板の面に向けて吐出した膜を形成する材料を含む液滴によって基板の面に形成される液膜に対し、該液膜側から熱をかける熱源と、該熱源と基板の面に形成される液膜との間に位置し、基板の面に形成される液膜の周縁部を覆う枠状のマスク部材とを備えたことを特徴とする膜形成装置。 A film forming apparatus for forming a film on a surface of a substrate, and the liquid film side of the liquid film formed on the surface of the substrate by droplets containing a material that forms the film discharged toward the surface of the substrate And a frame-shaped mask member that is positioned between the heat source and the liquid film formed on the surface of the substrate and covers the peripheral edge of the liquid film formed on the surface of the substrate. A film forming apparatus. 基板の面に機能を有する膜が設けられた素子であり、前記基板は、前記膜が形成された面の該膜の周縁部に対応する部分に、前記膜を形成するために前記基板に着弾させる前記膜を形成する材料を含む液滴をはじく發液処理が施された發液処理部を有していることを特徴とする素子。 An element in which a film having a function is provided on a surface of a substrate, the substrate landing on the substrate to form the film on a portion corresponding to a peripheral portion of the film on the surface on which the film is formed An element having a liquid treatment part subjected to a liquid repelling process for repelling a droplet containing a material for forming the film. 基板の面に機能を有する膜が設けられた素子であり、前記基板は、前記膜が形成された面の前記膜の周縁部に対応する部分に溝を有していることを特徴とする素子。
An element in which a film having a function is provided on a surface of a substrate, wherein the substrate has a groove in a portion corresponding to a peripheral portion of the film on the surface on which the film is formed. .
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007067251A (en) * 2005-09-01 2007-03-15 Mitsubishi Electric Corp Semiconductor device and its failure mark forming method
JP2007114586A (en) * 2005-10-21 2007-05-10 Nec Lcd Technologies Ltd Liquid crystal display device and its manufacturing method
JP2007196099A (en) * 2006-01-24 2007-08-09 Nippon Telegr & Teleph Corp <Ntt> Solution ejection apparatus and solution ejection process
JP2008065096A (en) * 2006-09-08 2008-03-21 Hitachi Displays Ltd Liquid crystal display device
JP2011071198A (en) * 2009-09-24 2011-04-07 Dainippon Screen Mfg Co Ltd Substrate processing method and apparatus
JP2012505553A (en) * 2008-11-25 2012-03-01 インテル コーポレイション Method for enabling selective substrate area plating
CN107379767A (en) * 2017-07-31 2017-11-24 华南理工大学 A kind of non-uniform ink print wire inkjet printing methods and device
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Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6311941B2 (en) * 1980-12-12 1988-03-16 Hitachi Ltd
JPH01204421A (en) * 1988-02-10 1989-08-17 Hitachi Ltd Photoresist applying method
JPH05166712A (en) * 1991-12-18 1993-07-02 Dainippon Screen Mfg Co Ltd Spin coating method
JPH0653132A (en) * 1992-07-31 1994-02-25 Nippon Telegr & Teleph Corp <Ntt> Manufacture of organic thin film and manufacturing device thereof
JPH0864544A (en) * 1994-08-22 1996-03-08 Touyoko Kagaku Kk Vapor growing method
JPH11253860A (en) * 1998-03-12 1999-09-21 Canon Inc Pattern forming device and method therefor
JP2001170546A (en) * 1999-12-15 2001-06-26 Toshiba Corp Method and apparatus for forming film
JP2001174819A (en) * 1999-12-16 2001-06-29 Seiko Epson Corp Method of forming coating film, method of producing liquid crystal device and film forming device
JP2003272840A (en) * 2002-03-14 2003-09-26 Seiko Epson Corp Manufacturing method and manufacturing device of photoelectric device, photoelectric device, and electronic device
JP2004330136A (en) * 2003-05-09 2004-11-25 Seiko Epson Corp Method for drying liquid film and method for manufacturing organic el panel, electrooptic panel and electronic equipment, and apparatus for drying liquid film, electrooptic panel, electrooptic apparatus and electronic equipment

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6311941B2 (en) * 1980-12-12 1988-03-16 Hitachi Ltd
JPH01204421A (en) * 1988-02-10 1989-08-17 Hitachi Ltd Photoresist applying method
JPH05166712A (en) * 1991-12-18 1993-07-02 Dainippon Screen Mfg Co Ltd Spin coating method
JPH0653132A (en) * 1992-07-31 1994-02-25 Nippon Telegr & Teleph Corp <Ntt> Manufacture of organic thin film and manufacturing device thereof
JPH0864544A (en) * 1994-08-22 1996-03-08 Touyoko Kagaku Kk Vapor growing method
JPH11253860A (en) * 1998-03-12 1999-09-21 Canon Inc Pattern forming device and method therefor
JP2001170546A (en) * 1999-12-15 2001-06-26 Toshiba Corp Method and apparatus for forming film
JP2001174819A (en) * 1999-12-16 2001-06-29 Seiko Epson Corp Method of forming coating film, method of producing liquid crystal device and film forming device
JP2003272840A (en) * 2002-03-14 2003-09-26 Seiko Epson Corp Manufacturing method and manufacturing device of photoelectric device, photoelectric device, and electronic device
JP2004330136A (en) * 2003-05-09 2004-11-25 Seiko Epson Corp Method for drying liquid film and method for manufacturing organic el panel, electrooptic panel and electronic equipment, and apparatus for drying liquid film, electrooptic panel, electrooptic apparatus and electronic equipment

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007067251A (en) * 2005-09-01 2007-03-15 Mitsubishi Electric Corp Semiconductor device and its failure mark forming method
JP2007114586A (en) * 2005-10-21 2007-05-10 Nec Lcd Technologies Ltd Liquid crystal display device and its manufacturing method
JP2007196099A (en) * 2006-01-24 2007-08-09 Nippon Telegr & Teleph Corp <Ntt> Solution ejection apparatus and solution ejection process
JP4647504B2 (en) * 2006-01-24 2011-03-09 日本電信電話株式会社 Solution discharge apparatus and solution discharge method
JP2008065096A (en) * 2006-09-08 2008-03-21 Hitachi Displays Ltd Liquid crystal display device
JP2012505553A (en) * 2008-11-25 2012-03-01 インテル コーポレイション Method for enabling selective substrate area plating
JP2011071198A (en) * 2009-09-24 2011-04-07 Dainippon Screen Mfg Co Ltd Substrate processing method and apparatus
CN107379767A (en) * 2017-07-31 2017-11-24 华南理工大学 A kind of non-uniform ink print wire inkjet printing methods and device
CN107379767B (en) * 2017-07-31 2023-02-14 华南理工大学 Uniform ink printing line ink-jet printing method and device
CN108016135A (en) * 2017-12-05 2018-05-11 华南理工大学 A kind of point-like figure ink-jet print system and inkjet printing methods
CN108016135B (en) * 2017-12-05 2023-09-22 华南理工大学 Dot pattern ink-jet printing system and ink-jet printing method

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