JPH06216045A - Vapor growth device - Google Patents

Vapor growth device

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Publication number
JPH06216045A
JPH06216045A JP802493A JP802493A JPH06216045A JP H06216045 A JPH06216045 A JP H06216045A JP 802493 A JP802493 A JP 802493A JP 802493 A JP802493 A JP 802493A JP H06216045 A JPH06216045 A JP H06216045A
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Prior art keywords
tube
reaction
vapor
inner
growth
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JP802493A
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Japanese (ja)
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JP3214750B2 (en )
Inventor
Keiichi Akagawa
Takashi Kataoka
敬 片岡
慶一 赤川
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Toshiba Corp
株式会社東芝
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Abstract

PURPOSE: To provide a vapor growth device wherein reaction products can be easily and safely cleaned, and a compound semiconductor thin film formed on a crystal substrate in a vapor growth manner can be enhanced in quality.
CONSTITUTION: A crystal substrate 2 placed on a suscepter 3 which is provided inside a reaction oven is heated by a heater 5, and a compound semiconductor thin film is grown on the crystal substrate through a vapor growth manner in a vapor growth device, wherein a shielding tube 12 where reaction product is deposited is provided to a recessed part 14 provided to the inner wall of a reaction tube 1 so as to produce no gap between the outer face 12a of the shielding tube 12 and the inner wall 14a of the recessed part 14. The shielding tube 12 is supported by a support board 13 fixed to the inner wall of the reaction tube 1 by screwing, and the inner wall 12b of the shielding tube 12 is set so as to be nearly flush with the inner wall 1a of the reaction tube 1.
COPYRIGHT: (C)1994,JPO&Japio

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【産業上の利用分野】本発明は、例えばヘテロ構造の化合物半導体等の製造に用いられる気相成長装置に関する。 The present invention relates to relates to, for example, vapor phase growth apparatus used for manufacturing a compound semiconductor such as heterostructures.

【0002】 [0002]

【従来の技術】図3は、従来の気相成長装置の構造を示す概略図である。 BACKGROUND ART FIG. 3 is a schematic diagram showing a structure of a conventional vapor phase growth apparatus. 従来の気相成長装置は、反応管1と下部フランジ8により構成される反応炉内に結晶基板2を載置するサセプタ3と、一端にサセプタ3を着脱自在に支持し、他端が回転駆動装置(図示省略)に接続される支持棒4と、結晶基板2を加熱するために設けられるヒータ5とを具備する。 Conventional vapor phase growth apparatus comprises a reaction tube 1 and the susceptor 3 for placing a crystal substrate 2 into the reactor constituted by a lower flange 8, one end susceptor 3 detachably supporting the other end is rotary drive a support rod 4 connected to the apparatus (not shown) comprises a heater 5 provided to heat the crystal substrate 2. また、反応管1内の結晶基板2の上方にはハニカム等の整流板6が配設され、さらにその上方には、ガス導入口7が設けられている。 Further, above the crystal substrate 2 in the reaction tube 1 is rectified plate 6 arranged in a honeycomb or the like, on its upper, gas inlet 7 is provided. 一方、反応管1は下部フランジ8上にOリング9を介して着脱自在に密着されており、この下部フランジ8には排気口10 On the other hand, the reaction tube 1 is detachably adhered via an O-ring 9 on the lower flange 8, the exhaust port to the lower flange 8 10
が設けられ、この排気口10の一端には排気装置(図示省略)が接続されている。 Is provided, an exhaust device (not shown) is connected to one end of the exhaust port 10.

【0003】上記のように構成された気相成長装置において、結晶基板2をヒータ5の加熱により所定の温度に上昇させるとともに、回転駆動装置により所定の回転数で回転させ、ガス導入口7より反応管1内に供給され、 [0003] In the vapor phase growth apparatus constructed as above, the crystal substrate 2 with increasing to a predetermined temperature by the heating of the heater 5, is rotated at a predetermined rotation speed by the rotational driving device, the gas inlet port 7 It is fed into the reaction tube 1,
整流板6を介して整流された原料ガス(例えばAs Source gas rectified through the rectifying plate 6 (for example, As
3 ,PH 3 )及びキャリアガス(例えばH 2 )により、結晶基板2上に、半導体の薄膜を気相成長させる。 The H 3, PH 3) and carrier gas (e.g., H 2), on a crystal substrate 2, the semiconductor thin film is grown in vapor phase.

【0004】ところで、上記した気相成長時には、反応管1の内壁も加熱されて高温となるので、反応管1の内壁にも反応生成物11が堆積し、成長回数を重ねるごとに厚くなる。 Meanwhile, at the time of vapor deposition as described above, since the inner wall of the reaction tube 1 also becomes heated to a high temperature, also deposited reaction products 11 to the inner wall of the reaction tube 1 is thicker in each successive growth number. そして、堆積した反応生成物11の一部が剥離し、粉塵となって、気相成長中の結晶基板2上に落下し、薄膜の膜厚が不均一となったり、薄膜の組成が変わってしまう。 A portion is separated of the deposited reaction products 11, becomes dust, falls onto the crystal substrate 2 in the vapor phase growth, the thickness of the thin film may become uneven, change the composition of the thin film put away. このため、所定回数気相成長を行った後に、反応管1を下部フランジ8から分割し取り外して、 Therefore, after the predetermined number of times vapor deposition, remove dividing the reaction tube 1 from the lower flange 8,
その内壁を洗浄し、堆積した反応生成物11を除去した後再び下部フランジ8に接続し、吸着ガスを脱ガスする必要がある。 Washing the inner wall, the reaction product 11 deposited connected to the lower flange 8 again after removal, it is necessary to degas the adsorbed gas. この脱ガスを行うのは、気相成長中に原料ガス以外に、例えば、空気中の酸素が反応管1内に取り込まれることにより、薄膜の組成が変わってしまうのを防止するためである。 The perform degassing, in addition to the raw material gas during the vapor deposition, for example, by oxygen in the air is taken into the reaction tube 1, in order to prevent the composition of the thin film would change. また、反応管1が例えば金属製の場合は、重量が重く取扱いが厄介なため、反応管1の内壁面に堆積した有害な反応生成物11が大気中に拡散される危険性があり、安全性に問題がある。 Also, if the reaction tube 1 is made of metal, such as, for weight is troublesome heavy handling, there is a risk of adverse reaction product 11 deposited on the inner wall surface of the reaction tube 1 is diffused into the atmosphere, safety there is a problem with sex.

【0005】そこで、本発明者は、先に(特願平3−3 It is therefore an object of the present invention have, in earlier (Japanese Patent Application No. 3-3
07917号)、図4に示すように、反応管1の内壁近傍に反応生成物11を堆積させるための遮蔽管12を設けることを提案している。 No. 07917), it is proposed to 4, provided the shielding pipe 12 for depositing the reaction product 11 near the inner wall of the reaction tube 1. 遮蔽管12は、石英ガラス等からなる円筒構造を有し、反応管1の内壁にネジ止め等により固定されている支持板13により支持されている。 Shielding pipe 12 has a cylindrical structure made of quartz glass or the like, is supported by a support plate 13 fixed by screws or the like to the inner wall of the reaction tube 1. これにより、気相成長時には、上記した遮蔽管12 As a result, at the time of vapor-phase growth, shielding pipe was above 12
が加熱されて高温になるため、遮蔽管12上で結晶成長して反応生成物11が堆積し、反応管1の内壁に直接反応生成物11が堆積するのを防止することができる。 Because but be hot is heated, it is possible to prevent the reaction product 11 is deposited by crystal growth on the shielding pipe 12, direct reaction product 11 on the inner wall of the reaction tube 1 is deposited. しかも、気相成長を所定回数行った後、反応管1を下部フランジ8から分離し、遮蔽管12のみを取り外して洗浄するだけでよいので、反応生成物11の洗浄が容易かつ安全に行うことが可能になる。 Moreover, after the vapor deposition was carried out a predetermined number of times, the reaction tube 1 is separated from the lower flange 8, it is only to wash and remove only the shielding pipe 12, is easily and safely performed that washing of the reaction product 11 It becomes possible.

【0006】しかし、上記したように、反応管1よりも内側に遮蔽管12を設けると、整流板6により整流され極めて流れの良い層流となっている成長ガスの流れが、 However, as described above, the provision of the shield pipe 12 on the inner side of the reaction tube 1, the flow of the deposition gas which is a rectified very stream good laminar flow by the rectifying plates 6,
遮蔽管12の影響を受けるため(図中の矢印)、結晶基板2上に気相成長する半導体の薄膜をより良質なものとするためには、更なる工夫が必要とされる。 Due to the influence of the shielding pipe 12 (arrow in the figure), in order to be on the crystal substrate 2 more quality semiconductor thin film vapor phase growth is further ingenuity is required.

【0007】 [0007]

【発明が解決しようとする課題】以上説明したように、 As explained in the invention Problems to be Solved] or more,
従来の気相成長装置にあっては、反応炉を構成する反応管よりも内側に遮蔽管を設ける必要があるため、成長ガスの流れが遮蔽管の影響を受け、結晶基板上に気相成長する半導体の薄膜の品質の向上に限界が生じていた。 In the conventional vapor phase growth apparatus, it is necessary to provide a shielding tube inside the reaction tube constituting the reactor receiving the flow of the deposition gas is the influence of the shielding pipe, vapor phase growth on a crystalline substrate limit in improving the quality of the semiconductor thin film that has occurred.

【0008】そこで、本発明では、上記問題を解決し、 [0008] Therefore, in the present invention, to solve the above problem,
反応生成物の洗浄が容易かつ安全に実施でき、しかも、 Easy cleaning of the reaction product and can be safely carried out, moreover,
結晶基板上に気相成長する薄膜の品質向上が図れる気相成長装置を提供することを目的とする。 And to provide a vapor deposition apparatus improve the quality of thin film vapor phase growth on the crystal substrate can be reduced.

【0009】 [0009]

【課題を解決するための手段】上記目的を達成するために、本発明では、反応炉内に配設されたサセプタ上に載置された基板を加熱手段により加熱し、前記基板に半導体の薄膜を気相成長させる気相成長装置において、前記反応炉の内壁に設けられる陥凹部と、この陥凹部に着脱自在に配設される遮蔽部材とを具備し、前記反応炉の内壁面と、前記遮蔽部材の内壁面とが略同一面をなすように構成されることを特徴とする気相成長装置を提供する。 To achieve the above object, according to the solution to ## in the present invention, the substrate placed on the disposed reactor susceptor was heated by a heating means, a semiconductor thin film on the substrate the in vapor phase growth apparatus for vapor phase growth, and the reactor recess provided in the inner wall of, comprising a shielding member that is detachably attached to the recessed portion, and the inner wall surface of the reactor, the providing a vapor phase growth apparatus characterized by the inner wall surface of the shielding member is constituted so as to form substantially the same plane.

【0010】 [0010]

【作用】反応炉の内壁に遮蔽部材を設けることにより、 [Action] By providing the shielding member to the inner wall of the reactor,
気相成長時には、上記した遮蔽部材が加熱されて高温になるため、遮蔽部材上に結晶成長して反応生成物が堆積し、反応炉の内壁に直接反応生成物が堆積するのを防止することができる。 During vapor deposition, since the shielding member described above becomes high by being heated, to prevent by crystal growth on the shielding member reaction product is deposited, that the direct reaction product on the inner wall of the reactor is deposited can.

【0011】また、反応炉の内壁に陥凹部を設け、この陥凹部に上記遮蔽部材を配設し、反応炉の内壁面と、前記遮蔽部材の内壁面とが略同一面をなすような構成とすることにより、成長ガスを極めて流れの良い層流の状態に維持することができる。 Further, a recessed portion is provided on the inner wall of the reactor, the shielding member is disposed in the recess, and the inner wall surface of the reactor, the inner wall surface of said shielding member is such as to form a substantially flush arrangement with, capable of supporting the growth gas to the state of an extremely flow good laminar flow.

【0012】 [0012]

【実施例】本発明の実施例について、図面を参照しつつ詳細に説明する。 For the embodiment of EXAMPLES The invention will be described in detail with reference to the drawings. 図1は、本発明に係る気相成長装置の第1実施例を示したものである。 Figure 1 shows a first embodiment of a vapor growth apparatus according to the present invention. ここで、図3に示した部分と同一部分については、同一番号を付すこととする。 Here, the same parts as the parts shown in FIG. 3, are denoted by the same numbers.

【0013】本実施例に係る気相成長装置は、反応管1 [0013] vapor deposition apparatus according to this embodiment, the reaction tube 1
と下部フランジ8により構成される反応炉内に結晶基板2を載置するサセプタ3と、一端にサセプタ3を着脱自在に支持し、他端が回転駆動装置(図示省略)に接続される支持棒4と、結晶基板2を加熱するために設けられるヒータ5を具備する。 Support bar and susceptor 3 for placing a crystal substrate 2 into the reactor constituted by a lower flange 8, the susceptor 3 detachably supporting one end and the other end is connected to a rotary drive device (not shown) and 4, comprises a heater 5 provided to heat the crystal substrate 2. また、反応管1内の結晶基板2 The crystal of the reaction tube 1 substrate 2
の上方にはハニカム等の整流板6が配設され、さらにその上方には、ガス導入口7が設けられている。 Of the upper is rectified plate 6 arranged in a honeycomb or the like, on its upper, gas inlet 7 is provided. 一方、反応管1は下部フランジ8上にOリング9を介して着脱自在に密着されており、この下部フランジ8には、排気口10が設けられ、この排気口10の一端には排気装置(図示省略)が接続されている。 Meanwhile, the reaction tube 1 are detachably adhered via an O-ring 9 on the lower flange 8, on the lower flange 8, the exhaust port 10 is provided, the exhaust system at one end of the exhaust port 10 ( not shown) is connected.

【0014】また、反応管1の内壁には、反応生成物1 Further, the inner wall of the reaction tube 1, the reaction products 1
1を堆積させるための遮蔽管12を配設するための陥凹部14が設けられている。 Recess 14 for disposing the shielding pipe 12 for depositing 1 is provided. 遮蔽管12は、石英ガラス等からなる円筒構造を有し、その外壁面12aと前記陥凹部14の内壁面14aとがほとんど隙間のないように前記陥凹部14に配設される。 Shielding pipe 12 has a cylindrical structure made of quartz glass or the like, and the inner wall surface 14a of the recess 14 and its outer wall surface 12a is disposed in the recessed portion 14 almost as free of gaps. ここで、遮蔽管12は、反応管1の内壁にネジ止め等により固定されている支持板13により支持されている。 Here, the shielding pipe 12 is supported by a support plate 13 fixed by screws or the like to the inner wall of the reaction tube 1. 一方、遮蔽管12の内壁面12bは、反応管1の内壁面1aと略同一面をなすように構成されている。 On the other hand, the inner wall surface 12b of the shielding pipe 12 is configured so as to form an inner wall surface 1a substantially the same surface of the reaction tube 1.

【0015】上記した本実施例に係る気相成長装置において、結晶基板2をヒータ5の加熱により所定の温度に上昇させるとともに、回転駆動装置により所定の回転数で回転させ、ガス導入口7より反応管1内に供給され、 [0015] In the vapor phase growth apparatus according to the present embodiment described above, the crystal substrate 2 with increasing to a predetermined temperature by the heating of the heater 5, is rotated at a predetermined rotation speed by the rotational driving device, the gas inlet port 7 It is fed into the reaction tube 1,
整流板6を介して整流された原料ガス(例えばAs Source gas rectified through the rectifying plate 6 (for example, As
3 ,PH 3 )及びキャリアガス(例えばH 2 )により、結晶基板2上に、半導体の薄膜を気相成長させる。 The H 3, PH 3) and carrier gas (e.g., H 2), on a crystal substrate 2, the semiconductor thin film is grown in vapor phase.

【0016】以上のような構成によれば、気相成長時には、上記した遮蔽管12が加熱されて高温になるため、 According to the above configuration, at the time of vapor deposition, to become a high temperature shielding pipe 12 described above is heated,
遮蔽管12上で結晶成長して反応生成物11が堆積し、 The reaction product 11 is deposited by crystal growth on the shielding pipe 12,
反応管1の内壁に直接反応生成物11が堆積するのを防止することができる。 It can be the reaction tube 1 inner wall directly to the reaction product 11 is prevented from deposition. しかも、気相成長を所定回数行った後、反応管1を下部フランジ8から分離し、遮蔽管1 Moreover, after the vapor deposition was carried out a predetermined number of times, and separating the reaction tube 1 from the lower flange 8, shielding pipe 1
2のみを取り外して洗浄するだけでよいので、反応生成物11の洗浄が容易かつ安全に行うことが可能になる。 It is only to wash and remove the 2 only allows the washing of the reaction product 11 carried out easily and safely.

【0017】また、遮蔽管12は、その外壁面12aと反応管1の陥凹部14の内壁面14aとがほとんど隙間のないように配設されていることから、この部分に存在する残留ガスの影響により、結晶基板2上に気相成長する半導体の薄膜の組成が変化するようなこともない。 Further, the shielding pipe 12, since the the inner wall surface 14a of the recessed portion 14 of the reaction tube 1 and its outer wall surface 12a is disposed almost like no gaps, the residual gas present in this portion the effect, nor as the composition of the semiconductor thin film is changed to vapor phase growth on the crystal substrate 2.

【0018】さらに、遮蔽管12の内壁面12bと、反応管1の内壁面1bとが略同一面をなすように構成されていることから、整流板6により整流された成長ガスの流れを極めて流れの良い層流の状態に維持することができるため、結晶基板2上に気相成長する半導体の薄膜をより良質なものとすることが可能となり、特に、半導体の薄膜の組成並びに膜厚の均一化に効果がある。 Furthermore, very and the inner wall surface 12b of the shielding pipe 12, since the inner wall surface 1b of the reaction tube 1 is configured so as to form substantially the same plane, the flow of the rectified grown gas by the rectification plate 6 it is possible to maintain the state of the stream of good laminar flow, it is possible to the semiconductor thin film vapor phase growth on the crystal substrate 2 as better quality, in particular, the composition and thickness of the semiconductor thin film it is effective in uniform.

【0019】図2は、本発明に係る気相成長装置の第2 FIG. 2, the second vapor deposition apparatus according to the present invention
実施例を示したものである。 It illustrates an embodiment. ここで、図1に示した部分と同一部分または同一機能を有する部分については、同一番号を付すことにより、重複説明を省略する。 Here, the portions having the same parts as the parts or the same functions shown in Figure 1 are identified by the same numbers, without redundant description.

【0020】本実施例においては、遮蔽管12の外壁面12aおよび反応管1の内壁に設けられた陥凹部14の内壁面14aとにネジ部を設け、遮蔽管12を反応管1 [0020] In this embodiment, a screw portion provided on the inner wall surface 14a of the recess 14 provided on the outer wall surface 12a and the inner wall of the reaction tube 1 of the shielding tube 12, the shielding pipe 12 reaction tube 1
の陥凹部14に螺合する構成としている。 It has a configuration which is screwed into the recess 14 of the. これにより、 As a result,
両者の隙間をほぼ零とすることができるとともに、遮蔽管12を支持するための支持板13を設ける必要がない。 It is possible to substantially zero clearance therebetween, there is no need to provide a supporting plate 13 for supporting the shielding pipe 12. このため、反応間1と遮蔽管12との隙間に存在する残留ガスを最小限にすることができ、半導体の薄膜を良質なものとすることができる。 Therefore, the residual gas present in the gap between the reaction between 1 and the shield pipe 12 can be minimized, the semiconductor thin film can be made good. また、このような構成によっても、第1実施例と同様の効果を得ることができる。 Also, with this configuration, it is possible to obtain the same effect as the first embodiment.

【0021】 [0021]

【発明の効果】以上説明したように、本発明によれば、 As described in the foregoing, according to the present invention,
反応管1の内壁に直接反応生成物11が堆積するのを防止することができ、しかも、気相成長を所定回数行った後、反応管1を下部フランジ8から分離し、遮蔽管12 The reaction tube can direct reaction product 11 on the inner wall of 1 to prevent the deposition, moreover, to separate after the vapor deposition was carried out a predetermined number of times, the reaction tube 1 from the lower flange 8, the shielding pipe 12
のみを取り外して洗浄するだけでよいので、反応生成物11の洗浄が容易かつ安全に行うことが可能になる。 It is only to wash and remove only allows the washing of the reaction product 11 carried out easily and safely.

【0022】また、整流板6により整流された成長ガスの流れを極めて流れの良い層流の状態に維持することができるため、結晶基板2上に気相成長する化合物半導体の薄膜をより良質なものとすることが可能となり、特に、半導体の薄膜の組成並びに膜厚の均一化に効果がある。 Further, it is possible to maintain the flow of the rectified grown gas by the rectification plate 6 extremely flow conditions a good laminar flow, better quality thin films of compound semiconductor vapor phase growth on the crystal substrate 2 it is possible to make the stuff, in particular, is effective in homogenizing the composition and thickness of the semiconductor thin film.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の第1実施例に係る気相成長装置。 [1] vapor deposition apparatus according to the first embodiment of the present invention.

【図2】本発明の第2実施例に係る気相成長装置。 [Figure 2] vapor deposition apparatus according to the second embodiment of the present invention.

【図3】従来の気相成長装置。 FIG. 3 is a conventional vapor phase growth apparatus.

【図4】遮蔽管を設けた気相成長装置。 [Figure 4] vapor deposition apparatus provided with a shielding tube.

【符号の説明】 DESCRIPTION OF SYMBOLS

1 反応管 2 結晶基板 3 サセプタ 4 支持棒 5 ヒータ 6 整流板 7 ガス導入口 8 下部フランジ 9 Oリング 10 排気口 11 反応生成物 12 遮蔽管 13 支持板 14 陥凹部 1 reaction tube 2 crystal substrate 3 susceptor 4 support rod 5 heater 6 vanes 7 gas inlet 8 lower flange 9 O-ring 10 outlet 11 reaction product 12 shielding pipe 13 supporting plate 14 recess

Claims (1)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 反応炉内に配設されたサセプタ上に載置された基板を加熱手段により加熱し、前記基板に半導体の薄膜を気相成長させる気相成長装置において、前記反応炉の内壁に設けられる陥凹部と、この陥凹部に着脱自在に配設される遮蔽部材とを具備し、前記反応炉の内壁面と、前記遮蔽部材の内壁面とが略同一面をなすように構成されることを特徴とする気相成長装置。 [Claim 1] A substrate placed on disposed reactor susceptor was heated by a heating means, in the vapor phase growth apparatus for vapor phase growing a semiconductor thin film on the substrate, the inner walls of the reactor a recess provided in, provided with a shielding member that is detachably attached to the recessed portion, and the inner wall surface of the reactor, the inner wall surface of said shielding member is configured so as to form a substantially flush vapor deposition apparatus according to claim Rukoto.
JP802493A 1993-01-21 1993-01-21 Vapor deposition apparatus Expired - Fee Related JP3214750B2 (en)

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JP802493A JP3214750B2 (en) 1993-01-21 1993-01-21 Vapor deposition apparatus

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JPH06216045A true true JPH06216045A (en) 1994-08-05
JP3214750B2 JP3214750B2 (en) 2001-10-02

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6059885A (en) * 1996-12-19 2000-05-09 Toshiba Ceramics Co., Ltd. Vapor deposition apparatus and method for forming thin film
JP2009027021A (en) * 2007-07-20 2009-02-05 Nuflare Technology Inc Vapor-phase growing device and vapor-phase growing method
JP2014520201A (en) * 2011-03-23 2014-08-21 ピルキントン グループ リミテッド Coating method using the apparatus and such apparatus for coating a thin film coating

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6059885A (en) * 1996-12-19 2000-05-09 Toshiba Ceramics Co., Ltd. Vapor deposition apparatus and method for forming thin film
JP2009027021A (en) * 2007-07-20 2009-02-05 Nuflare Technology Inc Vapor-phase growing device and vapor-phase growing method
JP2014520201A (en) * 2011-03-23 2014-08-21 ピルキントン グループ リミテッド Coating method using the apparatus and such apparatus for coating a thin film coating
JP2017040004A (en) * 2011-03-23 2017-02-23 ピルキントン グループ リミテッド Device for covering thin film coating, and coating method using such device

Also Published As

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