JP3214750B2 - Vapor phase growth equipment - Google Patents
Vapor phase growth equipmentInfo
- Publication number
- JP3214750B2 JP3214750B2 JP00802493A JP802493A JP3214750B2 JP 3214750 B2 JP3214750 B2 JP 3214750B2 JP 00802493 A JP00802493 A JP 00802493A JP 802493 A JP802493 A JP 802493A JP 3214750 B2 JP3214750 B2 JP 3214750B2
- Authority
- JP
- Japan
- Prior art keywords
- vapor phase
- tube
- phase growth
- wall surface
- reaction tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- Chemical Vapour Deposition (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、例えばヘテロ構造の化
合物半導体等の製造に用いられる気相成長装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vapor phase growth apparatus used for producing, for example, a compound semiconductor having a heterostructure.
【０００２】[0002]
【従来の技術】図３は、従来の気相成長装置の構造を示
す概略図である。従来の気相成長装置は、反応管１と下
部フランジ８により構成される反応炉内に結晶基板２を
載置するサセプタ３と、一端にサセプタ３を着脱自在に
支持し、他端が回転駆動装置（図示省略）に接続される
支持棒４と、結晶基板２を加熱するために設けられるヒ
ータ５とを具備する。また、反応管１内の結晶基板２の
上方にはハニカム等の整流板６が配設され、さらにその
上方には、ガス導入口７が設けられている。一方、反応
管１は下部フランジ８上にＯリング９を介して着脱自在
に密着されており、この下部フランジ８には排気口１０
が設けられ、この排気口１０の一端には排気装置（図示
省略）が接続されている。2. Description of the Related Art FIG. 3 is a schematic diagram showing the structure of a conventional vapor phase growth apparatus. The conventional vapor phase epitaxy apparatus includes a susceptor 3 on which a crystal substrate 2 is placed in a reaction furnace constituted by a reaction tube 1 and a lower flange 8, a susceptor 3 which is detachably supported at one end, and a rotary drive at the other end. The apparatus includes a support rod 4 connected to an apparatus (not shown) and a heater 5 provided for heating the crystal substrate 2. A rectifying plate 6 such as a honeycomb is provided above the crystal substrate 2 in the reaction tube 1, and a gas inlet 7 is provided further above the rectifying plate 6. On the other hand, the reaction tube 1 is detachably attached to the lower flange 8 via an O-ring 9, and the lower flange 8 has an exhaust port 10.
An exhaust device (not shown) is connected to one end of the exhaust port 10.
【０００３】上記のように構成された気相成長装置にお
いて、結晶基板２をヒータ５の加熱により所定の温度に
上昇させるとともに、回転駆動装置により所定の回転数
で回転させ、ガス導入口７より反応管１内に供給され、
整流板６を介して整流された原料ガス（例えばＡｓ
Ｈ3 ，ＰＨ3 ）及びキャリアガス（例えばＨ2 ）によ
り、結晶基板２上に、半導体の薄膜を気相成長させる。In the vapor phase growth apparatus configured as described above, the crystal substrate 2 is heated to a predetermined temperature by heating the heater 5, and is rotated at a predetermined rotation speed by a rotation driving device. Is supplied into the reaction tube 1,
The raw material gas (eg, As) rectified through the rectifying plate 6
H 3 , PH 3 ) and a carrier gas (eg, H 2 ) are used to grow a semiconductor thin film on the crystal substrate 2 in a vapor phase.
【０００４】ところで、上記した気相成長時には、反応
管１の内壁も加熱されて高温となるので、反応管１の内
壁にも反応生成物１１が堆積し、成長回数を重ねるごと
に厚くなる。そして、堆積した反応生成物１１の一部が
剥離し、粉塵となって、気相成長中の結晶基板２上に落
下し、薄膜の膜厚が不均一となったり、薄膜の組成が変
わってしまう。このため、所定回数気相成長を行った後
に、反応管１を下部フランジ８から分割し取り外して、
その内壁を洗浄し、堆積した反応生成物１１を除去した
後再び下部フランジ８に接続し、吸着ガスを脱ガスする
必要がある。この脱ガスを行うのは、気相成長中に原料
ガス以外に、例えば、空気中の酸素が反応管１内に取り
込まれることにより、薄膜の組成が変わってしまうのを
防止するためである。また、反応管１が例えば金属製の
場合は、重量が重く取扱いが厄介なため、反応管１の内
壁面に堆積した有害な反応生成物１１が大気中に拡散さ
れる危険性があり、安全性に問題がある。During the above-described vapor phase growth, the inner wall of the reaction tube 1 is also heated to a high temperature, so that the reaction product 11 is deposited on the inner wall of the reaction tube 1 and becomes thicker as the number of times of growth increases. Then, a part of the deposited reaction product 11 peels off, becomes dust, and falls on the crystal substrate 2 during the vapor phase growth, and the film thickness of the thin film becomes uneven or the composition of the thin film changes. I will. For this reason, after the vapor phase growth is performed a predetermined number of times, the reaction tube 1 is divided from the lower flange 8 and detached.
After cleaning the inner wall and removing the deposited reaction product 11, it is necessary to reconnect to the lower flange 8 to degas the adsorbed gas. The degassing is performed to prevent the composition of the thin film from being changed due to, for example, oxygen in the air being taken into the reaction tube 1 in addition to the source gas during the vapor phase growth. If the reaction tube 1 is made of metal, for example, it is heavy and cumbersome to handle, so there is a risk that harmful reaction products 11 deposited on the inner wall surface of the reaction tube 1 may be diffused into the atmosphere, and There is a problem with sex.
【０００５】そこで、本発明者は、先に（特願平３−３
０７９１７号）、図４に示すように、反応管１の内壁近
傍に反応生成物１１を堆積させるための遮蔽管１２を設
けることを提案している。遮蔽管１２は、石英ガラス等
からなる円筒構造を有し、反応管１の内壁にネジ止め等
により固定されている支持板１３により支持されてい
る。これにより、気相成長時には、上記した遮蔽管１２
が加熱されて高温になるため、遮蔽管１２上で結晶成長
して反応生成物１１が堆積し、反応管１の内壁に直接反
応生成物１１が堆積するのを防止することができる。し
かも、気相成長を所定回数行った後、反応管１を下部フ
ランジ８から分離し、遮蔽管１２のみを取り外して洗浄
するだけでよいので、反応生成物１１の洗浄が容易かつ
安全に行うことが可能になる。The inventor of the present invention has previously described (Japanese Patent Application No.
No. 07917), and as shown in FIG. 4, it is proposed to provide a shielding tube 12 for depositing a reaction product 11 near the inner wall of the reaction tube 1. The shielding tube 12 has a cylindrical structure made of quartz glass or the like, and is supported by a support plate 13 fixed to the inner wall of the reaction tube 1 by screws or the like. Thereby, during the vapor phase growth, the shielding tube 12
Is heated to a high temperature, so that it is possible to prevent crystals from growing on the shielding tube 12 and accumulating the reaction product 11 and depositing the reaction product 11 directly on the inner wall of the reaction tube 1. Moreover, after performing the vapor phase growth a predetermined number of times, it is only necessary to separate the reaction tube 1 from the lower flange 8 and remove only the shielding tube 12 for washing, so that the reaction product 11 can be easily and safely washed. Becomes possible.
【０００６】しかし、上記したように、反応管１よりも
内側に遮蔽管１２を設けると、整流板６により整流され
極めて流れの良い層流となっている成長ガスの流れが、
遮蔽管１２の影響を受けるため（図中の矢印）、結晶基
板２上に気相成長する半導体の薄膜をより良質なものと
するためには、更なる工夫が必要とされる。However, as described above, when the shielding tube 12 is provided inside the reaction tube 1, the flow of the growth gas which is rectified by the rectifying plate 6 and has a very good laminar flow is reduced.
Because of the influence of the shielding tube 12 (arrows in the figure), further measures are required to improve the quality of the semiconductor thin film grown on the crystal substrate 2 in the vapor phase.
【０００７】[0007]
【発明が解決しようとする課題】以上説明したように、
従来の気相成長装置にあっては、反応炉を構成する反応
管よりも内側に遮蔽管を設ける必要があるため、成長ガ
スの流れが遮蔽管の影響を受け、結晶基板上に気相成長
する半導体の薄膜の品質の向上に限界が生じていた。As described above,
In a conventional vapor phase growth apparatus, it is necessary to provide a shielding tube inside the reaction tube constituting the reaction furnace, so that the growth gas flow is affected by the shielding tube and the vapor phase growth on the crystal substrate is performed. However, there has been a limit in improving the quality of semiconductor thin films.
【０００８】そこで、本発明では、上記問題を解決し、
反応生成物の洗浄が容易かつ安全に実施でき、しかも、
結晶基板上に気相成長する薄膜の品質向上が図れる気相
成長装置を提供することを目的とする。Therefore, the present invention solves the above problem,
The reaction product can be easily and safely washed, and
An object of the present invention is to provide a vapor phase growth apparatus capable of improving the quality of a thin film that is vapor phase grown on a crystal substrate.
【０００９】[0009]
【課題を解決するための手段】上記目的を達成するため
に、本発明では、反応炉内に配設されたサセプタ上に載
置された基板を加熱手段により加熱し、前記基板に半導
体の薄膜を気相成長させる気相成長装置において、前記
反応炉の内壁に設けられる陥凹部と、この陥凹部に着脱
自在に配設される遮蔽部材とを具備し、前記反応炉の内
壁面と、前記遮蔽部材の内壁面とが略同一面をなすよう
に構成されることを特徴とする気相成長装置を提供す
る。In order to achieve the above object, according to the present invention, a substrate mounted on a susceptor provided in a reaction furnace is heated by a heating means, and a semiconductor thin film is formed on the substrate. In the vapor phase growth apparatus for vapor phase growth of the reactor, comprising a recess provided on the inner wall of the reaction furnace, a shielding member detachably disposed in the recess, the inner wall surface of the reaction furnace, A vapor phase growth apparatus is provided, wherein the inner wall surface of the shielding member is configured to be substantially flush with the inner wall surface.
【００１０】[0010]
【作用】反応炉の内壁に遮蔽部材を設けることにより、
気相成長時には、上記した遮蔽部材が加熱されて高温に
なるため、遮蔽部材上に結晶成長して反応生成物が堆積
し、反応炉の内壁に直接反応生成物が堆積するのを防止
することができる。By providing a shielding member on the inner wall of the reactor,
During the vapor phase growth, since the above-mentioned shielding member is heated to a high temperature, a crystal grows on the shielding member, and a reaction product is deposited, thereby preventing the reaction product from directly depositing on the inner wall of the reactor. Can be.
【００１１】また、反応炉の内壁に陥凹部を設け、この
陥凹部に上記遮蔽部材を配設し、反応炉の内壁面と、前
記遮蔽部材の内壁面とが略同一面をなすような構成とす
ることにより、成長ガスを極めて流れの良い層流の状態
に維持することができる。A recess is provided on the inner wall of the reaction furnace, and the shielding member is provided in the recess, so that the inner wall surface of the reactor and the inner wall surface of the shielding member are substantially flush with each other. By doing so, the growth gas can be maintained in a very good laminar flow state.
【００１２】[0012]
【実施例】本発明の実施例について、図面を参照しつつ
詳細に説明する。図１は、本発明に係る気相成長装置の
第１実施例を示したものである。ここで、図３に示した
部分と同一部分については、同一番号を付すこととす
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 shows a first embodiment of the vapor phase growth apparatus according to the present invention. Here, the same portions as those shown in FIG. 3 are denoted by the same reference numerals.
【００１３】本実施例に係る気相成長装置は、反応管１
と下部フランジ８により構成される反応炉内に結晶基板
２を載置するサセプタ３と、一端にサセプタ３を着脱自
在に支持し、他端が回転駆動装置（図示省略）に接続さ
れる支持棒４と、結晶基板２を加熱するために設けられ
るヒータ５を具備する。また、反応管１内の結晶基板２
の上方にはハニカム等の整流板６が配設され、さらにそ
の上方には、ガス導入口７が設けられている。一方、反
応管１は下部フランジ８上にＯリング９を介して着脱自
在に密着されており、この下部フランジ８には、排気口
１０が設けられ、この排気口１０の一端には排気装置
（図示省略）が接続されている。The vapor phase growth apparatus according to this embodiment has a reaction tube 1
And a susceptor 3 on which the crystal substrate 2 is placed in a reactor constituted by a lower flange 8 and a support rod having one end detachably supporting the susceptor 3 and the other end connected to a rotary drive device (not shown). 4 and a heater 5 provided for heating the crystal substrate 2. Also, the crystal substrate 2 in the reaction tube 1
A rectifying plate 6 such as a honeycomb is disposed above the gas inlet, and a gas inlet 7 is provided further above the flow straightening plate 6. On the other hand, the reaction tube 1 is detachably attached to the lower flange 8 via an O-ring 9, and the lower flange 8 is provided with an exhaust port 10. One end of the exhaust port 10 is provided with an exhaust device ( (Not shown) is connected.
【００１４】また、反応管１の内壁には、反応生成物１
１を堆積させるための遮蔽管１２を配設するための陥凹
部１４が設けられている。遮蔽管１２は、石英ガラス等
からなる円筒構造を有し、その外壁面１２ａと前記陥凹
部１４の内壁面１４ａとがほとんど隙間のないように前
記陥凹部１４に配設される。ここで、遮蔽管１２は、反
応管１の内壁にネジ止め等により固定されている支持板
１３により支持されている。一方、遮蔽管１２の内壁面
１２ｂは、反応管１の内壁面１ａと略同一面をなすよう
に構成されている。On the inner wall of the reaction tube 1, the reaction product 1
A recess 14 is provided for arranging a shielding tube 12 for depositing 1. The shielding tube 12 has a cylindrical structure made of quartz glass or the like, and is disposed in the recess 14 so that the outer wall surface 12a and the inner wall surface 14a of the recess 14 have almost no gap. Here, the shielding tube 12 is supported by a support plate 13 fixed to the inner wall of the reaction tube 1 by screws or the like. On the other hand, the inner wall surface 12b of the shielding tube 12 is configured to be substantially flush with the inner wall surface 1a of the reaction tube 1.
【００１５】上記した本実施例に係る気相成長装置にお
いて、結晶基板２をヒータ５の加熱により所定の温度に
上昇させるとともに、回転駆動装置により所定の回転数
で回転させ、ガス導入口７より反応管１内に供給され、
整流板６を介して整流された原料ガス（例えばＡｓ
Ｈ3 ，ＰＨ3 ）及びキャリアガス（例えばＨ2 ）によ
り、結晶基板２上に、半導体の薄膜を気相成長させる。In the above-described vapor phase growth apparatus according to the present embodiment, the crystal substrate 2 is heated to a predetermined temperature by heating the heater 5, and is rotated at a predetermined rotation speed by a rotation driving device. Is supplied into the reaction tube 1,
The raw material gas (eg, As) rectified through the rectifying plate 6
H 3 , PH 3 ) and a carrier gas (eg, H 2 ) are used to grow a semiconductor thin film on the crystal substrate 2 in a vapor phase.
【００１６】以上のような構成によれば、気相成長時に
は、上記した遮蔽管１２が加熱されて高温になるため、
遮蔽管１２上で結晶成長して反応生成物１１が堆積し、
反応管１の内壁に直接反応生成物１１が堆積するのを防
止することができる。しかも、気相成長を所定回数行っ
た後、反応管１を下部フランジ８から分離し、遮蔽管１
２のみを取り外して洗浄するだけでよいので、反応生成
物１１の洗浄が容易かつ安全に行うことが可能になる。According to the above configuration, the above-described shield tube 12 is heated to a high temperature during the vapor phase growth.
The crystal grows on the shielding tube 12 and the reaction product 11 is deposited,
It is possible to prevent the reaction product 11 from directly depositing on the inner wall of the reaction tube 1. Moreover, after the vapor phase growth has been performed a predetermined number of times, the reaction tube 1 is separated from the lower flange 8 and the shield tube 1
Since it is only necessary to remove and wash only 2, the reaction product 11 can be easily and safely washed.
【００１７】また、遮蔽管１２は、その外壁面１２ａと
反応管１の陥凹部１４の内壁面１４ａとがほとんど隙間
のないように配設されていることから、この部分に存在
する残留ガスの影響により、結晶基板２上に気相成長す
る半導体の薄膜の組成が変化するようなこともない。Further, since the shielding tube 12 is disposed so that the outer wall surface 12a thereof and the inner wall surface 14a of the recess 14 of the reaction tube 1 have almost no gap, the residual gas existing in this portion is not provided. Due to the influence, the composition of the semiconductor thin film grown on the crystal substrate 2 in the vapor phase does not change.
【００１８】さらに、遮蔽管１２の内壁面１２ｂと、反
応管１の内壁面１ｂとが略同一面をなすように構成され
ていることから、整流板６により整流された成長ガスの
流れを極めて流れの良い層流の状態に維持することがで
きるため、結晶基板２上に気相成長する半導体の薄膜を
より良質なものとすることが可能となり、特に、半導体
の薄膜の組成並びに膜厚の均一化に効果がある。Further, since the inner wall surface 12b of the shielding tube 12 and the inner wall surface 1b of the reaction tube 1 are configured to be substantially flush with each other, the flow of the growth gas rectified by the rectifying plate 6 can be extremely reduced. Since a good laminar flow state can be maintained, the quality of the semiconductor thin film grown on the crystal substrate 2 can be improved. In particular, the composition and thickness of the semiconductor thin film can be improved. Effective for uniformity.
【００１９】図２は、本発明に係る気相成長装置の第２
実施例を示したものである。ここで、図１に示した部分
と同一部分または同一機能を有する部分については、同
一番号を付すことにより、重複説明を省略する。FIG. 2 shows a second embodiment of the vapor phase growth apparatus according to the present invention.
It shows an example. Here, the same portions as those shown in FIG. 1 or portions having the same functions are denoted by the same reference numerals, and redundant description will be omitted.
【００２０】本実施例においては、遮蔽管１２の外壁面
１２ａおよび反応管１の内壁に設けられた陥凹部１４の
内壁面１４ａとにネジ部を設け、遮蔽管１２を反応管１
の陥凹部１４に螺合する構成としている。これにより、
両者の隙間をほぼ零とすることができるとともに、遮蔽
管１２を支持するための支持板１３を設ける必要がな
い。このため、反応間１と遮蔽管１２との隙間に存在す
る残留ガスを最小限にすることができ、半導体の薄膜を
良質なものとすることができる。また、このような構成
によっても、第１実施例と同様の効果を得ることができ
る。In this embodiment, screw portions are provided on the outer wall surface 12a of the shielding tube 12 and the inner wall surface 14a of the recess 14 provided on the inner wall of the reaction tube 1, and the shielding tube 12 is connected to the reaction tube 1
Is screwed into the recessed portion 14. This allows
The gap between the two can be made substantially zero, and there is no need to provide a support plate 13 for supporting the shielding tube 12. For this reason, the residual gas existing in the gap between the reaction tube 1 and the shielding tube 12 can be minimized, and the semiconductor thin film can be made of high quality. Also, with such a configuration, the same effect as in the first embodiment can be obtained.
【００２１】[0021]
【発明の効果】以上説明したように、本発明によれば、
反応管１の内壁に直接反応生成物１１が堆積するのを防
止することができ、しかも、気相成長を所定回数行った
後、反応管１を下部フランジ８から分離し、遮蔽管１２
のみを取り外して洗浄するだけでよいので、反応生成物
１１の洗浄が容易かつ安全に行うことが可能になる。As described above, according to the present invention,
The reaction product 11 can be prevented from directly accumulating on the inner wall of the reaction tube 1, and after performing vapor phase growth a predetermined number of times, the reaction tube 1 is separated from the lower flange 8, and the shielding tube 12 is formed.
Since it is only necessary to remove and wash only the reaction product 11, the reaction product 11 can be easily and safely washed.
【００２２】また、整流板６により整流された成長ガス
の流れを極めて流れの良い層流の状態に維持することが
できるため、結晶基板２上に気相成長する化合物半導体
の薄膜をより良質なものとすることが可能となり、特
に、半導体の薄膜の組成並びに膜厚の均一化に効果があ
る。Further, since the flow of the growth gas rectified by the rectifying plate 6 can be maintained in an extremely good laminar flow state, the thin film of the compound semiconductor grown on the crystal substrate 2 can be formed with a higher quality. This is particularly effective in making the composition and thickness of the semiconductor thin film uniform.
【図１】本発明の第１実施例に係る気相成長装置。FIG. 1 shows a vapor phase growth apparatus according to a first embodiment of the present invention.
【図２】本発明の第２実施例に係る気相成長装置。FIG. 2 shows a vapor phase growth apparatus according to a second embodiment of the present invention.
【図３】従来の気相成長装置。FIG. 3 shows a conventional vapor phase growth apparatus.
【図４】遮蔽管を設けた気相成長装置。FIG. 4 shows a vapor phase growth apparatus provided with a shielding tube.
１ 反応管 ２ 結晶基板 ３ サセプタ ４ 支持棒 ５ ヒータ ６ 整流板 ７ ガス導入口 ８ 下部フランジ ９ Ｏリング １０ 排気口 １１ 反応生成物 １２ 遮蔽管 １３ 支持板 １４ 陥凹部 DESCRIPTION OF SYMBOLS 1 Reaction tube 2 Crystal substrate 3 Susceptor 4 Support rod 5 Heater 6 Rectifier plate 7 Gas inlet 8 Lower flange 9 O-ring 10 Exhaust port 11 Reaction product 12 Shielding tube 13 Support plate 14 Depression
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/205 C23C 16/46 H01L 21/31 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) H01L 21/205 C23C 16/46 H01L 21/31
Claims (1)
も内径が長い第２の内壁面を有する反応管と、 前記反応管内に配設されたサセプタと、 前記サセプタ上に戴置された基板を加熱する加熱手段
と、 前記基板に薄膜を気相成長させる原料ガスを導入するガ
ス導入手段と、 前記第２の内壁面に着脱自在に配設される遮蔽管を有
し、 前記遮蔽管の内壁面と前記第１の内壁面とが略同一面を
なすことを特徴とする気相成長装置。1. A reaction tube having a first inner wall surface, a second inner wall surface having an inner diameter longer than the first inner wall surface, a susceptor provided in the reaction tube, and a susceptor disposed on the susceptor. Heating means for heating the placed substrate; gas introduction means for introducing a source gas for vapor-phase growing a thin film on the substrate; and a shielding tube detachably provided on the second inner wall surface, An inner wall surface of the shield tube and the first inner wall surface are substantially flush with each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP00802493A JP3214750B2 (en) | 1993-01-21 | 1993-01-21 | Vapor phase growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP00802493A JP3214750B2 (en) | 1993-01-21 | 1993-01-21 | Vapor phase growth equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06216045A JPH06216045A (en) | 1994-08-05 |
| JP3214750B2 true JP3214750B2 (en) | 2001-10-02 |
Family
ID=11681772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP00802493A Expired - Fee Related JP3214750B2 (en) | 1993-01-21 | 1993-01-21 | Vapor phase growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3214750B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0854210B1 (en) * | 1996-12-19 | 2002-03-27 | Toshiba Ceramics Co., Ltd. | Vapor deposition apparatus for forming thin film |
| JP5165952B2 (en) * | 2007-07-20 | 2013-03-21 | 株式会社ニューフレアテクノロジー | Vapor growth apparatus and vapor growth method |
| EP2688851B1 (en) * | 2011-03-23 | 2019-01-23 | Pilkington Group Limited | Apparatus for depositing thin film coatings and method of deposition utilizing such apparatus |
-
1993
- 1993-01-21 JP JP00802493A patent/JP3214750B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06216045A (en) | 1994-08-05 |
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