JP3061455B2 - Vapor phase growth apparatus and cleaning method in vapor phase growth apparatus - Google Patents
Vapor phase growth apparatus and cleaning method in vapor phase growth apparatusInfo
- Publication number
- JP3061455B2 JP3061455B2 JP3223906A JP22390691A JP3061455B2 JP 3061455 B2 JP3061455 B2 JP 3061455B2 JP 3223906 A JP3223906 A JP 3223906A JP 22390691 A JP22390691 A JP 22390691A JP 3061455 B2 JP3061455 B2 JP 3061455B2
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- JP
- Japan
- Prior art keywords
- substrate
- substrate holder
- vapor phase
- phase growth
- growth apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体等の製造に用い
られる気相成長装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vapor phase growth apparatus used for manufacturing semiconductors and the like.
【０００２】[0002]
【従来の技術】反応炉内にガス（原料ガス，キャリアガ
ス等）を供給し前記反応炉内に配置した基板ホルダ上の
基板に薄膜を気相成長させる気相成長装置では、基板に
薄膜を気相成長させる際に、反応炉内特に基板ホルダ上
に半導体薄膜等の堆積物が堆積する。2. Description of the Related Art In a vapor phase growth apparatus for supplying a gas (a raw material gas, a carrier gas, or the like) into a reaction furnace and vapor-growing the thin film on a substrate on a substrate holder disposed in the reaction furnace, the thin film is deposited on the substrate. During vapor phase growth, deposits such as semiconductor thin films are deposited in the reactor, especially on the substrate holder.
【０００３】このように基板ホルダ上に堆積物が堆積す
ると、基板に気相成長させる際に前記堆積物が剥離する
ことによって、基板上に剥離した堆積物が付着して薄膜
の膜組成に悪影響を及ぼす。When deposits are deposited on the substrate holder as described above, the deposits are separated during vapor phase growth on the substrate, and the separated deposits adhere to the substrate and adversely affect the film composition of the thin film. Effect.
【０００４】また、堆積物の厚みが大きくなると、成長
した膜の膜厚分布等の均一性も悪化するようになる。[0004] In addition, as the thickness of the deposit increases, the uniformity such as the film thickness distribution of the grown film also deteriorates.
【０００５】このため、反応炉内の基板ホルダ等に堆積
した堆積物を定期的に除去する必要があり、従来は基板
ホルダから基板を取外した状態で反応炉内に、エッチン
グガス（例えばＨＣｌ）をキャリアガス（例えばＨ2 ）
と共に供給して基板ホルダ等に堆積した堆積物を除去し
ていた。Therefore, it is necessary to periodically remove deposits deposited on a substrate holder or the like in the reaction furnace. Conventionally, an etching gas (eg, HCl) is introduced into the reaction furnace with the substrate removed from the substrate holder. To a carrier gas (eg, H 2 )
And remove the deposits deposited on the substrate holder and the like.
【０００６】[0006]
【発明が解決しようとする課題】上記したように従来の
気相成長装置では、図４に示すように基板ホルダ１の外
周側には堆積物２が堆積しているが、その内側の基板が
載置されていた部分１ａには堆積物はないので、基板ホ
ルダ１に堆積した堆積物２をエッチングガスで除去する
際に、基板ホルダ１の基板が載置されていた部分１ａは
エッチングガスに直接触れる。As described above, in the conventional vapor phase epitaxy apparatus, the deposit 2 is deposited on the outer peripheral side of the substrate holder 1 as shown in FIG. Since there is no deposit on the portion 1a on which the substrate is placed, when removing the deposit 2 deposited on the substrate holder 1 with an etching gas, the portion 1a of the substrate holder 1 on which the substrate is placed is exposed to the etching gas. Touch directly.
【０００７】このため、基板ホルダ１がエッチングガス
によって腐食されることにより、基板ホルダ１の寿命が
短くなる問題点があった。また、基板ホルダ１が腐食さ
れることにより、基板ホルダ１が例えばＳｉＣコートさ
れている場合には、このＳｉＣコートはエッチングガス
（例えばＨＣｌ）で徐々に腐食されることによって、基
板ホルダ中の微量の不純物が放出され、気相成長時に基
板に付着して薄膜の膜組成に悪影響を及ぼす。For this reason, there is a problem that the life of the substrate holder 1 is shortened due to the corrosion of the substrate holder 1 by the etching gas. In addition, when the substrate holder 1 is corroded, for example, when the substrate holder 1 is coated with, for example, SiC, the SiC coat is gradually corroded by an etching gas (eg, HCl), so that a trace amount of the substrate holder 1 is removed. Is attached to the substrate during the vapor phase growth and adversely affects the film composition of the thin film.
【０００８】また、基板ホルダ１上の堆積物２を完全に
除去するために、堆積物２が基板ホルダ１上からほぼ除
去された後も一定時間エッチングガスが供給されていた
ので、基板ホルダ１が腐食されることによって基板ホル
ダ１中の微量の不純物が放出されることにより、気相成
長時に不純物が基板に付着して薄膜の膜組成に悪影響を
及ぼす。Further, in order to completely remove the deposit 2 on the substrate holder 1, the etching gas is supplied for a certain time even after the deposit 2 is almost removed from the substrate holder 1. Corrosion releases a small amount of impurities in the substrate holder 1, causing impurities to adhere to the substrate during vapor phase growth and adversely affecting the film composition of the thin film.
【０００９】本発明は上記した課題を解決する目的でな
され、反応炉内の堆積物を除去する際に基板ホルダに悪
影響を与えることなく、基板ホルダ上の堆積物を良好に
除去することができる気相成長装置を提供しようとする
ものである。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and it is possible to satisfactorily remove deposits on a substrate holder without adversely affecting the substrate holder when removing deposits in a reactor. It is intended to provide a vapor phase growth apparatus.
【００１０】[0010]
【課題を解決するための手段】前記した課題を解決する
ために、本発明の第１の特徴は、反応炉内に原料ガスを
供給し、反応炉内に配置した基板ホルダ上の基板に薄膜
を気相成長させる気相成長装置において、基板ホルダ上
に堆積した堆積物を除去するためのエッチングガスを反
応炉内に供給する第一のガス供給装置と、基板ホルダに
堆積した堆積物を除去する際に、基板ホルダの基板が載
置されていた部分にパージガスを供給する第二のガス供
給装置とを具備する気相成長装置であることにある。Means for Solving the Problems In order to solve the above-mentioned problems, a first feature of the present invention is to supply a raw material gas into a reaction furnace and deposit a thin film on a substrate on a substrate holder arranged in the reaction furnace. A first gas supply device for supplying an etching gas for removing deposits deposited on a substrate holder into a reaction furnace, and removing deposits deposited on the substrate holder in a vapor phase growth apparatus for vapor-depositing the substrate. A second gas supply device for supplying a purge gas to a portion of the substrate holder on which the substrate has been placed.
【００１１】また、本発明の第２の特徴は、気相成長装
置の反応炉内に堆積した堆積物を除去する気相成長装置
内のクリーニング方法において、基板ホルダの基板が載
置されていた部分にパージガスを供給しながら、反応炉
内にエッチングガスを流して堆積物を除去する気相成長
装置内のクリーニング方法であることにある。A second feature of the present invention is that in the cleaning method in the vapor phase growth apparatus for removing deposits deposited in the reaction furnace of the vapor phase growth apparatus, the substrate of the substrate holder is placed. It is a cleaning method in a vapor phase growth apparatus that removes deposits by flowing an etching gas into a reaction furnace while supplying a purge gas to the portion.
【００１２】[0012]
【作用】本発明によれば、基板への気相成長により、基
板を載置する基板ホルダに堆積した堆積物をガスによっ
て除去する際に、基板ホルダの基板が載置されていた部
分をガスから保護することにより、基板ホルダ表面の腐
食等を防止して堆積物だけを除去することができる。According to the present invention, when a deposit deposited on a substrate holder on which a substrate is mounted is removed by gas by vapor phase growth on the substrate, a portion of the substrate holder on which the substrate is mounted is removed by gas. By protecting the substrate holder from corrosion, it is possible to prevent corrosion and the like on the surface of the substrate holder and remove only deposits.
【００１３】[0013]
【実施例】以下、本発明を図示の一実施例に基づいて詳
細に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail based on one embodiment shown in the drawings.
【００１４】図１は、本発明の一実施例に係る気相成長
装置を示す概略構成図である。この図に示すように、反
応炉３内には基板４を載置した基板ホルダ１と、基板ホ
ルダ１を回転自在に支持する回転軸５と、基板４と基板
ホルダ１を加熱するヒータ６が配設されている。FIG. 1 is a schematic configuration diagram showing a vapor phase growth apparatus according to one embodiment of the present invention. As shown in the figure, a substrate holder 1 on which a substrate 4 is placed, a rotating shaft 5 for rotatably supporting the substrate holder 1, and a heater 6 for heating the substrate 4 and the substrate holder 1 are provided in a reaction furnace 3. It is arranged.
【００１５】反応炉３の上部には供給管７を介して反応
炉３内に原料ガス（例えばＳｉＨ2 Ｃｌ2 ）を供給する
原料ガス供給装置８と、反応炉３内に堆積する半導体薄
膜等の堆積物を除去するエッチングガス（例えばＨＣ
ｌ）を反応炉３内に供給するエッチングガス供給装置９
が切換えバルブ１０を介して接続されており、反応炉３
の下部には回転軸５を回転駆動するモータ１１と、反応
炉３内の圧力調整及び未反応ガス等を排気する排気装置
１２が排気管１３を介して接続されている。At the upper part of the reactor 3, a source gas supply device 8 for supplying a source gas (for example, SiH 2 Cl 2 ) into the reactor 3 through a supply pipe 7, and a semiconductor thin film or the like deposited in the reactor 3. Etching gas (eg, HC
etching gas supply device 9 for supplying l) into the reaction furnace 3
Are connected via a switching valve 10, and the reaction furnace 3
A motor 11 for rotating and driving the rotary shaft 5 and an exhaust device 12 for adjusting the pressure in the reaction furnace 3 and exhausting unreacted gas and the like are connected through an exhaust pipe 13 to the lower part of the apparatus.
【００１６】また、反応炉３の基板ホルダ１上に載置し
た基板４と対向する外側面には、それぞれゲートバルブ
１４，１５を介して第１，第２予備室１６，１７が連通
して形成されており、第１，第２予備室１６，１７の外
側にはそれぞれ搬送装置１８，１９が配設されている。Further, first and second preparatory chambers 16 and 17 communicate with the outer surface of the reaction furnace 3 facing the substrate 4 placed on the substrate holder 1 via gate valves 14 and 15, respectively. The transfer devices 18 and 19 are disposed outside the first and second preliminary chambers 16 and 17, respectively.
【００１７】第１予備室１６内には、基板受け２０が基
板４方向に移動自在に配設されており、基板受け２０に
は、搬送装置１８によって基板４方向に移動自在な搬送
棒２１がベロー２２を介して気密状態で連結されてい
る。このように、基板受け２０は、搬送装置１８によっ
て移動する搬送棒２１によって反応炉３内の基板ホルダ
１上に移動し、基板ホルダ１に載置される基板４を第１
予備室１６から反応炉３、反応炉３から第１予備室１６
に搬入・搬出する。A substrate receiver 20 is provided in the first preliminary chamber 16 so as to be movable in the direction of the substrate 4, and a transfer rod 21 movable in the direction of the substrate 4 by the transfer device 18 is provided in the substrate receiver 20. They are connected in an airtight manner via bellows 22. As described above, the substrate receiver 20 is moved onto the substrate holder 1 in the reaction furnace 3 by the transfer rod 21 moved by the transfer device 18, and the substrate 4 placed on the substrate holder 1 is moved to the first position.
The reactor 3 from the preliminary chamber 16 and the first preliminary chamber 16 from the reactor 3
Carry in and out.
【００１８】第２予備室１７内には、基板４とほぼ同じ
径の基板ホルダ保護板２３が基板４方向に移動自在に配
設されており、基板ホルダ保護板２３には、搬送装置１
９によって基板４方向に移動自在な搬送棒２４がベロー
２５を介して気密状態で着脱自在に連結されている。基
板ホルダ保護板２３は、例えばＳｉもしくはＳｉＣをコ
ートした高純度カーボンもしくはＳｉＣ板もしくはカー
ボンもしくはＳｉＯ2 等の材質で形成されている。ま
た、他の材質でもよい。このように、基板ホルダ保護板
２３は、搬送装置１９によって移動する搬送棒２４によ
って反応炉３内の基板ホルダ１上に移動し、基板ホルダ
１の基板４が載置される位置に搬入・搬出される。A substrate holder protection plate 23 having substantially the same diameter as the substrate 4 is provided in the second preliminary chamber 17 so as to be movable in the direction of the substrate 4.
A transfer rod 24 movable in the direction of the substrate 4 is detachably connected via a bellow 25 in an airtight manner by 9. The substrate holder protection plate 23 is made of, for example, a high-purity carbon or SiC plate coated with Si or SiC, or a material such as carbon or SiO 2 . Further, another material may be used. As described above, the substrate holder protection plate 23 is moved onto the substrate holder 1 in the reaction furnace 3 by the transfer rod 24 moved by the transfer device 19, and is carried in and out of the position of the substrate holder 1 where the substrate 4 is placed. Is done.
【００１９】また、第１，第２予備室１６，１７は、そ
れぞれ上部にＯリング２６，２７を介して蓋２８，２９
が着脱自在に配設され、下部には第１，第２予備室１
６，１７内の圧力調整及び未反応ガス等を排気するため
に排気管３０，３１を介して前記排気装置１２が接続さ
れている。The first and second spare chambers 16 and 17 are provided with O-rings 26 and 27 at their upper parts to cover 28 and 29, respectively.
Are detachably provided, and the first and second spare rooms 1
The exhaust device 12 is connected via exhaust pipes 30 and 31 for adjusting the pressure in the tubes 6 and 17 and exhausting unreacted gas and the like.
【００２０】本実施例に係る気相成長装置は上記のよう
に構成されており、排気装置１２で反応炉３内を排気し
て所定の圧力に調整し、ヒータ６の加熱によって基板４
を所定温度に上昇させると共に、モータ１１を回転駆動
して基板ホルダ１及び基板４を回転させて、原料ガス供
給装置８から原料ガス（例えばＳｉＨ2 Ｃｌ2 ）をキャ
リアガス（例えばＨ2 ）と共に反応炉３内に供給するこ
とによって、基板４上に半導体薄膜を気相成長させる。
この際、薄膜としてシリコンを成長させる場合は、基板
４はＳｉであり、基板ホルダ１はＳｉＣをコートした高
純度カーボンである。この時、反応炉５と第１，第２予
備室１６を仕切るゲートバルブ１４，１５は閉じられて
いる。The vapor phase growth apparatus according to the present embodiment is configured as described above. The inside of the reaction furnace 3 is evacuated to a predetermined pressure by the exhaust device 12, and the substrate 4 is heated by the heater 6.
Is raised to a predetermined temperature, and the motor 11 is rotationally driven to rotate the substrate holder 1 and the substrate 4, so that the source gas (eg, SiH 2 Cl 2 ) is supplied from the source gas supply device 8 together with the carrier gas (eg, H 2 ). The semiconductor thin film is vapor-grown on the substrate 4 by being supplied into the reaction furnace 3.
At this time, when growing silicon as a thin film, the substrate 4 is made of Si, and the substrate holder 1 is made of high-purity carbon coated with SiC. At this time, the gate valves 14 and 15 that partition the reaction furnace 5 from the first and second preliminary chambers 16 are closed.
【００２１】そして、反応炉３内で半導体薄膜の気相成
長を例えば１ロット２５回行うと、基板ホルダ１の基板
４が載置されている外側には、１回の気相成長につき例
えば５μｍ程度の厚さで半導体薄膜が堆積するので、全
体では１２５μｍ程度の厚さで半導体薄膜（以下、堆積
物という）が堆積する。When the semiconductor thin film is vapor-phase grown in the reaction furnace 3 25 times, for example, in one lot, the outside of the substrate holder 1 on which the substrate 4 is mounted is, for example, 5 μm per vapor-phase growth. Since the semiconductor thin film is deposited with a thickness of about 1, a semiconductor thin film (hereinafter, referred to as a deposit) is deposited with a thickness of about 125 μm as a whole.
【００２２】そして、上記したように基板ホルダ１上に
ある程度堆積物が堆積すると、この堆積物が剥離して基
板４に付着するというような不都合が生じるので、堆積
物を除去する必要がある。以下、基板ホルダ１上に堆積
した堆積物の除去について説明する。If a certain amount of deposits accumulate on the substrate holder 1 as described above, such an inconvenience that the deposits peel off and adhere to the substrate 4 occurs. Therefore, it is necessary to remove the deposits. Hereinafter, the removal of the deposits deposited on the substrate holder 1 will be described.
【００２３】先ず、第１予備室１６のゲートバルブ１４
を開け、搬送装置１８で搬送棒２１を移動させて連結さ
れている基板受け２０を反応炉３内に移動させる。そし
て、基板４を基板受け２０で保持して再び搬送装置１８
で搬送棒２１を元の位置まで移動させることにより、基
板４が第１予備室１６内に収納される。この時、反応炉
３内と第１予備室１６は、排気装置１２によりほぼ等し
い圧力に調整されている。First, the gate valve 14 of the first preliminary chamber 16
Is opened, and the transfer rod 21 is moved by the transfer device 18 to move the connected substrate receiver 20 into the reaction furnace 3. Then, the substrate 4 is held by the substrate receiver 20 and is again transferred to the transport device 18.
The substrate 4 is stored in the first preliminary chamber 16 by moving the transport rod 21 to the original position. At this time, the pressure inside the reaction furnace 3 and the first preliminary chamber 16 are adjusted to substantially the same pressure by the exhaust device 12.
【００２４】そして、第１予備室１６のゲートバルブ１
４を閉じた後、今度は第２予備室１７のゲートバルブ１
５を開け、搬送装置１９で搬送棒２４を移動させて着脱
自在に連結されている基板ホルダ保護板２３を反応炉３
内の基板ホルダ１上の基板４が載置されていた位置に設
置する（図２参照）。この時、反応炉３内と第２予備室
１７は、排気装置１２によりほぼ等しい圧力に調整され
ている。The gate valve 1 of the first preliminary chamber 16
4 is closed, and then the gate valve 1 of the second preliminary chamber 17 is closed.
5 is opened, the transfer rod 24 is moved by the transfer device 19, and the substrate holder protection plate 23, which is detachably connected, is moved to the reaction furnace 3.
The substrate 4 is set on the substrate holder 1 in the position where the substrate 4 was placed (see FIG. 2). At this time, the pressure inside the reaction furnace 3 and the second preliminary chamber 17 are adjusted to substantially the same pressure by the exhaust device 12.
【００２５】そして、第２予備室１７のゲートバルブ１
５を閉じて反応炉３内をヒータ６の加熱によって所定温
度に設定し、切換えバルブ１０を切換えてエッチングガ
ス供給装置９から供給管７を通してエッチングガス（例
えばＨＣｌ）をキャリアガス（例えばＨ2 ）と共に反応
炉３内に供給して基板ホルダ１に堆積している堆積物２
の除去を行う。除去された堆積物２は、排気管１３を通
して排気装置１２で反応炉３の外に排出されて回収装置
（図示省略）に回収される。The gate valve 1 of the second preliminary chamber 17
5, the inside of the reaction furnace 3 is set to a predetermined temperature by heating the heater 6, and the switching valve 10 is switched to supply the etching gas (eg, HCl) from the etching gas supply device 9 through the supply pipe 7 to the carrier gas (eg, H 2 ). Deposit 2 deposited on the substrate holder 1 while being supplied into the reactor 3
Is removed. The removed sediment 2 is discharged to the outside of the reaction furnace 3 by an exhaust device 12 through an exhaust pipe 13 and is collected by a collecting device (not shown).
【００２６】また、エッチングガスによる堆積物２の除
去時間は堆積物２の厚さによって調整され、堆積物２が
ほぼ除去された時にエッチングガスの供給を停止するよ
うにする。例えば、半導体薄膜の気相成長を例えば１ロ
ット２５回行った時、基板ホルダ１の外周側には、１回
の気相成長につき例えば５μｍ程度の厚さで堆積物２が
堆積すると、２５回では１２５μｍ程度の厚さで堆積物
２が堆積する。よって、エッチングガスによる堆積物２
の除去速度（エッチング速度）を例えば２０μｍ／min
とすると、６分少しで堆積物２が完全に除去されるの
で、エッチングガスの反応炉３内への供給時間は６分少
しに設定する。The time for removing the deposit 2 by the etching gas is adjusted by the thickness of the deposit 2, and the supply of the etching gas is stopped when the deposit 2 is almost removed. For example, when vapor deposition of a semiconductor thin film is performed, for example, 25 times per lot, if the deposit 2 is deposited on the outer peripheral side of the substrate holder 1 to a thickness of, for example, about 5 μm per vapor deposition, the deposition is performed 25 times. In this case, the deposit 2 is deposited with a thickness of about 125 μm. Therefore, the deposit 2 by the etching gas
Removal rate (etching rate) is, for example, 20 μm / min.
Then, the deposit 2 is completely removed in about 6 minutes, so that the supply time of the etching gas into the reaction furnace 3 is set to about 6 minutes.
【００２７】本実施例においては、第１，第２予備室を
具備しているが、第１予備室のみ具備していてもよく、
また、予備室を具備せず、直接、基板や、基板ホルダ保
護板を基板ホルダに置載してもよい。また、予備室に
は、複数の基板や基板ホルダ保護板を収納及び搬送する
手段を有していてもよい。In this embodiment, the first and second spare chambers are provided, but only the first spare chamber may be provided.
In addition, the substrate or the substrate holder protection plate may be directly mounted on the substrate holder without having the preliminary chamber. Further, the spare room may have a unit for storing and transporting a plurality of substrates and a substrate holder protection plate.
【００２８】図３は、本発明の第２の実施例に係る気相
成長装置の要部を示す概略図である。FIG. 3 is a schematic diagram showing a main part of a vapor phase growth apparatus according to a second embodiment of the present invention.
【００２９】本実施例では、基板ホルダ１の基板４が載
置されていた部分１ａに、上方に設けた複数の供給管７
ａ，７ｂ，７ｃからパージガス（例えばＨ2）を流し、
堆積物２が堆積している部分に、上方に設けた複数の供
給管７ｄ，７ｅからエッチングガス（例えばＨＣｌ）を
キャリアガス（例えばＨ2 ）と共に流す構成である。In this embodiment, a plurality of supply pipes 7 provided above are provided in a portion 1a of the substrate holder 1 on which the substrate 4 is mounted.
a, a purge gas (for example, H 2 ) is supplied from
An etching gas (for example, HCl) is flowed together with a carrier gas (for example, H 2 ) from a plurality of supply pipes 7 d and 7 e provided above to a portion where the deposit 2 is deposited.
【００３０】このように、本実施例では、基板ホルダ１
の基板４が載置されていた部分１ａをパージガスで保護
することにより、エッチングガスが基板ホルダ１を腐食
することなく堆積物２だけを除去することができる。As described above, in this embodiment, the substrate holder 1
By protecting the portion 1a on which the substrate 4 has been placed with the purge gas, only the deposit 2 can be removed without the etching gas corroding the substrate holder 1.
【００３１】この実施例においても、堆積物の除去時間
は堆積物の厚みとエッチング速度に応じて設定される。Also in this embodiment, the time for removing the deposit is set according to the thickness of the deposit and the etching rate.
【００３２】また、前記した各実施例では、基板ホルダ
１の堆積物２を除去する際に基板ホルダ１を加熱した
が、エッチングガスとして例えばハロゲン化ガスを用い
ることにより、室温で堆積物２だけを除去することがで
きる。In each of the above-described embodiments, the substrate holder 1 is heated when the deposit 2 on the substrate holder 1 is removed. However, by using, for example, a halogenated gas as an etching gas, only the deposit 2 is removed at room temperature. Can be removed.
【００３３】また、前記した各実施例で、エッチングガ
スで基板ホルダ１上の堆積物２を除去する際に、反応炉
３の内壁面等に付着している堆積物も除去することがで
きる。In each of the above-described embodiments, when removing the deposit 2 on the substrate holder 1 with the etching gas, the deposit adhering to the inner wall surface of the reaction furnace 3 can be removed.
【００３４】[0034]
【発明の効果】以上、実施例に基づいて具体的に説明し
たように本発明によれば、基板ホルダに堆積した堆積物
をガスで除去する際に、基板ホルダの基板が載置されて
いた部分を保護することにより、基板ホルダ表面の腐食
を防止して基板ホルダに堆積した堆積物だけを除去する
ことができるので、基板ホルダの寿命が長くなり、且つ
基板ホルダから不純物が放出されることもなくなり、高
品質の薄膜を成長させることができる。As described above, according to the present invention, when the deposits deposited on the substrate holder are removed by the gas, the substrate of the substrate holder is placed. By protecting the portion, corrosion of the surface of the substrate holder can be prevented and only deposits deposited on the substrate holder can be removed, so that the life of the substrate holder is prolonged and impurities are released from the substrate holder. And a high quality thin film can be grown.
【図１】本発明の第１の実施例に係る気相成長装置を示
す概略図である。FIG. 1 is a schematic diagram showing a vapor phase growth apparatus according to a first embodiment of the present invention.
【図２】基板ホルダに載置した基板ホルダ保護板を示す
側面図である。FIG. 2 is a side view showing a substrate holder protection plate placed on the substrate holder.
【図３】本発明の第２の実施例に係る気相成長装置の要
部を示す概略図である。FIG. 3 is a schematic diagram showing a main part of a vapor phase growth apparatus according to a second embodiment of the present invention.
【図４】堆積物が堆積した基板ホルダを示す側面図であ
る。FIG. 4 is a side view showing a substrate holder on which deposits are deposited.
１ 基板ホルダ ２ 堆積物 ３ 反応炉 ４ 基板 ８ 原料ガス供給装置 ９ エッチングガス供給装置 １２ 排気装置 １６ 第１予備室 １７ 第２予備室 ２０ 基板受け ２３ 基板ホルダ保護板（保護手段） DESCRIPTION OF SYMBOLS 1 Substrate holder 2 Deposit 3 Reactor 4 Substrate 8 Raw material gas supply device 9 Etching gas supply device 12 Exhaust device 16 First preliminary chamber 17 Second preliminary chamber 20 Substrate receiver 23 Substrate holder protection plate (protection means)
Claims (2)
炉内に配置した基板ホルダ上の基板に薄膜を気相成長さ
せる気相成長装置において、 前記基板ホルダ上に堆積した堆積物を除去するためのエ
ッチングガスを前記反応炉内に供給する第一のガス供給
装置と、 前記基板ホルダに堆積した堆積物を除去する際に、前記
基板ホルダの前記基板が載置されていた部分にパージガ
スを供給する第二のガス供給装置とを具備することを特
徴とする気相成長装置。1. A vapor phase growth apparatus for supplying a source gas into a reaction furnace and vapor-phase growing a thin film on a substrate on a substrate holder disposed in the reaction furnace, wherein a deposit deposited on the substrate holder is removed. A first gas supply device for supplying an etching gas for removal into the reaction furnace, and when removing deposits deposited on the substrate holder, a portion of the substrate holder where the substrate is placed is provided. A second gas supply device for supplying a purge gas.
物を除去する気相成長装置内のクリーニング方法におい
て、 基板ホルダの基板が載置されていた部分にパージガスを
供給しながら、前記反応炉内にエッチングガスを流して
前記堆積物を除去することを特徴とする気相成長装置内
のクリーニング方法。2. A cleaning method in a vapor phase growth apparatus for removing deposits deposited in a reaction furnace of the vapor phase growth apparatus, wherein the purge gas is supplied to a portion of the substrate holder on which the substrate is mounted, while the purge gas is supplied. A method for cleaning the inside of a vapor phase growth apparatus, characterized by removing the deposit by flowing an etching gas into a reactor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3223906A JP3061455B2 (en) | 1991-09-04 | 1991-09-04 | Vapor phase growth apparatus and cleaning method in vapor phase growth apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3223906A JP3061455B2 (en) | 1991-09-04 | 1991-09-04 | Vapor phase growth apparatus and cleaning method in vapor phase growth apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0562912A JPH0562912A (en) | 1993-03-12 |
| JP3061455B2 true JP3061455B2 (en) | 2000-07-10 |
Family
ID=16805566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3223906A Expired - Fee Related JP3061455B2 (en) | 1991-09-04 | 1991-09-04 | Vapor phase growth apparatus and cleaning method in vapor phase growth apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3061455B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102010006725B4 (en) * | 2010-02-03 | 2016-03-03 | Siltronic Ag | Process for producing a silicon wafer with an epitaxially deposited layer |
| DE102015205719B4 (en) * | 2015-03-30 | 2022-08-18 | Siltronic Ag | Process for coating semiconductor wafers |
| DE102016211614A1 (en) * | 2016-06-28 | 2017-12-28 | Siltronic Ag | Method and apparatus for producing coated semiconductor wafers |
| JP7153582B2 (en) * | 2019-02-01 | 2022-10-14 | 東京エレクトロン株式会社 | Film forming method and film forming apparatus |
-
1991
- 1991-09-04 JP JP3223906A patent/JP3061455B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0562912A (en) | 1993-03-12 |
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