JPH08139028A - Vertical vapor growth equipment - Google Patents

Abstract

PURPOSE: To provide a vertical vapor growth equipment wherein a jig is installed in order to carry substrates with high positional precision, independently of the substrate size. CONSTITUTION: This equipment is provided with a retaining rod 10 which is inserted into a reaction tube 1 and rotated in the reaction tube, and a substrate retaining jig 9 which is retained by the retaining rod and retains a substrate 8 to be grown, so as to turn the main surface downward. When the substrate is carried, the substrate is retained by the substrate retaining jig in a different chamber, moved to a reaction chamber, and retained by a substrate retaining jig acceptor 25. The substrate retaining jig 9 is provided with the folowing; a cylindrical main body 9a in which an object 7 to be induction-heated is set, a plurality of flat or stepped substrate retaining pawls 12 for retaining the peripheral part of the substrate whose main surface faces downward, and a retaining ring part 26 which is formed in the upper part of the main body, engaged with the substrate retaining jig acceptor of the retaining rod, and larger than the outer diameter of the main body. The substrate retaining pawls are installed in the lower part of the main body and protrude rectangularly to the axial direction of the rotating retaining rod. The substrate retaining jig is detachable to the retaining bar.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vertical vapor phase growth apparatus, and more particularly to improvement of a high frequency induction heating type vertical vapor phase growth apparatus which is often used for growing a semiconductor single crystal thin film.

[0002]

2. Description of the Related Art In manufacturing a semiconductor device, a necessary semiconductor layer is grown by thermal decomposition of a source gas containing silicon or a component constituting a compound semiconductor, reaction between a plurality of source gases, surface reaction with a substrate, and the like. A vapor phase growth method of growing on a substrate is used. In particular, in the case of vapor phase growth of a semiconductor layer due to a thermal decomposition reaction of an organic metal or a hydride, a composition change of a source gas is likely to occur due to heat, and the composition change has a large influence on a film quality or a film thickness. For phase growth, it is necessary to prevent the composition change of the source gas from occurring before reaching the surface of the substrate to be grown. Therefore, in order to avoid heat generation other than near the substrate, a vapor phase growth method using a high frequency induction heating method is generally used. Here, as an example, a schematic cross-sectional view of a reaction furnace portion of a conventional vertical vapor deposition apparatus is shown in FIG.
Shown in In the figure, reference numeral 101 is a reaction tube, 102 is a water supply port for cooling water, 103 is a drain port, 104 is a gas introduction port, 10
6 is an exhaust port, 107 is an induction heating object (carbon susceptor, etc.), 108 is a growth substrate, 110 is a support rod, 111
Is a high frequency induction coil.

However, in the conventional high-frequency induction heating type vertical vapor deposition apparatus having the structure shown in FIG. 14, thermal convection is generated in the introduced gas due to the temperature rise in the vicinity of the induction-heated body 107 such as a carbon susceptor. Therefore, once decomposed once the high temperature waste gas that did not contribute to the growth mixes with the new room temperature supply gas and reaches the substrate surface, so the supply gas that contributes to the growth undergoes thermal decomposition before reaching the substrate,
Reproducibility of highly uniform and high-quality epitaxial growth layer by adversely affecting the controllability and variation of the ratio of elemental components when reaching the substrate surface, adversely affecting the quality, uniformity, reproducibility, etc. of the epitaxial growth layer. It was difficult to get good quality.

Therefore, in order to reduce the adverse effects caused by the generation of the thermal convection, a vertical vapor phase growth apparatus as disclosed in Japanese Utility Model Publication No. 2-35814 has been proposed. FIG. 15 shows a schematic sectional view of the reaction furnace part. In the vertical vapor phase growth apparatus shown in FIG. 15, the raw material gas is supplied from the gas inlet 104 at the bottom of the reaction tube 101, and unnecessary gas that has not contributed to the growth is discharged from the exhaust port 106 at the top. A substrate holding jig 109 having a substrate holding claw 112 is fixed to the support rod 110, and the substrate to be grown 108 whose main surface is directed downward by the substrate holding claw 112 of the substrate holding jig 109.
An induction-heated body 107 having the same size as the growth substrate 108 is directly mounted on the back surface of the growth substrate 108 while holding only the peripheral portion thereof. According to this method, the growth gas flowing from the lower part of the reaction tube 101 reaches the surface of the growth substrate without touching the high temperature portion, and the growth gas heated in contact with the growth substrate 108 is grown by the ascending airflow. Prevents the temperature of the growth gas at room temperature from reaching the surface of the growth substrate by mixing with the heated growth gas and escaping along the surface of the substrate to prevent the growth gas that has not changed its composition from contacting the growth substrate surface. With such a structure, unnecessary gas is less likely to be mixed with the raw material gas, so that the deterioration of the quality of the grown film and the variation of the film thickness are improved.

As a vertical vapor phase growth apparatus for holding the main surface of a substrate to be grown downward, Japanese Patent Laid-Open No. 55-2028 is known.
Although there is a known example shown in Japanese Patent Publication No. 2), the apparatus of the known example is designed to prevent foreign matters from adhering to the surface of the substrate to be grown, and the apparatus is provided from outside the reaction tube together with the reaction tube. Since the substrate is heated, in vapor phase growth using an organic metal and a hydride, the source gas is pyrolyzed and deteriorated in the high temperature reaction tube before reaching the surface of the substrate to be grown.
The same effect as the above-mentioned invention in which only the vicinity of the substrate is heated using the high frequency induction heating method cannot be obtained.

Further, as a method for further reducing the adverse effect caused by the generation of thermal convection, a semiconductor thin film vapor phase growth apparatus as disclosed in Japanese Patent Application Laid-Open No. 2-6389 has been proposed.
FIG. 16 shows a schematic sectional view of the reaction furnace part. In the vapor phase growth apparatus shown in FIG. 16, a carrier gas supply port 105 is provided around the source gas supply port 104. With such a structure, the carrier gas positively pushes the unnecessary gas that has not contributed to the growth among the source gases supplied to the substrate to be grown to the upper portion, so that the unnecessary gas can be exhausted more effectively. It is a thing.

However, in these methods, although the variation of the film thickness near the center of the growth substrate and the film quality are improved, the induction heated body 107 of the same size as the growth substrate is stacked on the growth substrate 108. Therefore, the edge effect of thickening the peripheral portion occurs and the uniformity is deteriorated. In the vertical vapor phase growth apparatus shown in FIG. 16, in-plane uniformity can be improved by appropriately selecting the raw material gas supply amount and the carrier gas supply amount and the ratio thereof. Although the film thickness near the center becomes uniform in the direction of increasing the thickness, when the conditions are selected so that the film thickness near the center becomes uniform, the one side 1c of the peripheral portion is inevitable.
About m will be thicker. Further, since the induction heated body having the same size as the growth substrate is loaded on the growth substrate, the temperature of the peripheral portion of the induction heated body is lower than that of the central portion and the temperature distribution of the induction heated body depends on the temperature distribution. Thermal strain was generated on the substrate to be grown, which caused defects such as slip lines. As a method of reducing the rise of the peripheral portion and the generation of defects such as slip lines due to thermal strain, it is conceivable to use an induction-heated body larger than the growth substrate. By doing so, the gas flow becomes uniform even in the peripheral portion of the growth substrate, so that the uniformity of the film thickness is improved and the temperature distribution in the region of the induction heating body in contact with the growth substrate also becomes small. It is expected that.

The method of using an induction heated body larger than the growth substrate is a conventional vertical type vapor phase growth apparatus having a structure in which a source gas is supplied from the upper part and unnecessary gas which has not contributed to the growth is discharged from the lower part ( In FIG. 14), since the substrate to be grown is simply loaded on the body to be heated by induction, there is no particular problem as long as the body to be heated by induction is enlarged. However, in a vertical vapor phase growth apparatus (FIGS. 15 and 16) using a high frequency induction heating system having a structure in which a raw material gas is supplied from the lower portion and unnecessary gas that has not contributed to growth is discharged from the upper portion, The substrate holding method is difficult because the main surface must be held downward and the heat must be efficiently supplied from the induction-heated body. FIG. 17 shows details of the substrate holding method of the conventional vertical vapor deposition apparatus shown in FIG. In this example, a substrate holding jig 109 having a fixed holding arm 130 with a substrate holding claw 112 and a swingable holding arm 131 holds a substrate to be grown 108 whose main surface faces downward, and An induction-heated body 107 having the same size as the growth substrate is directly mounted on the back surface. By doing so, it is possible to hold the main surface of the growth substrate 108 downward and to efficiently supply heat from the induction-heated body 107. However, such a small substrate holding claw 112
When the growth substrate 108 and the induction-heated body 107 are held simultaneously by using the
When it is larger than 8, the substrate to be grown 108 is the substrate holding claw 1.
The degree of freedom on 12 was large, and the position accuracy was very poor. Therefore, in order to prevent the growth substrate from being displaced with respect to the induction heating body, it is necessary to make the growth substrate and the induction heating body the same size.

By the way, when crystal growth is performed by a vapor phase growth apparatus, it is very important to keep the reaction chamber clean. From this point of view, the method of transporting the growth substrate is adopted. For transportation, generally, Japanese Patent Application Laid-Open No. 61-132592
A load lock system as disclosed in Japanese Patent Laid-Open Publication No. 2003-242242 is used to prevent contamination in the reaction chamber. Also in this case, in a conventional vapor phase growth apparatus having a structure in which a raw material gas is supplied from the upper portion and unnecessary gas that has not contributed to growth is discharged from the lower portion, for example, as disclosed in Japanese Patent Laid-Open No. 61-242994. Using an insulator such as a sapphire plate or a Si plate with a rough surface in contact with the substrate as a substrate holding jig and placing the substrate to be grown on top of it, displacement of the substrate is prevented and induction heating such as carbon susceptor is performed. It is easy to transport onto the body. However, it is not easy to transfer a substrate in a vertical vapor phase growth apparatus using a high frequency induction heating system having a structure in which a source gas is supplied from the lower portion and an unnecessary gas that does not contribute to growth is discharged from the upper portion. Therefore, in the conventional vertical vapor deposition apparatus as shown in FIG. 15, the substrate holding jig 109 and the support rod 110 are integrated as shown in FIG. 17, and the carbon susceptor is directly mounted on the substrate. The way to do is taken. Therefore, when setting the growth substrate, it is necessary to move the induction-heated body such as carbon susceptor, which is porous and has a large amount of gas adsorption, to a separate chamber (substrate insertion chamber), so that oxygen or the like that adversely affects the growth layer If it is adsorbed and brought into the reaction chamber, it causes deterioration of the film quality. In addition, there is a drawback that it takes a very long time to sufficiently degas, which causes a decrease in throughput.

Polycrystals and the like are deposited on the downstream side of the growth substrate. In particular, the vicinity of the induction-heated body and the substrate holding jig is large along with the inner wall of the reaction tube, but the conventional vertical vapor phase growth apparatus as shown in FIG. 17 in which the substrate holding jig and the support rod are integrated. In, it is necessary to remove the induction-heated body and wash it frequently. However, after cleaning and replacement, a high-quality epitaxial growth layer cannot be obtained unless degassing is sufficiently performed.
Therefore, there is a drawback that it causes a deterioration in throughput.

Further, in the vertical type vapor phase growth apparatus using the conventional high frequency induction heating system of the structure in which the raw material gas is supplied from the lower part and the unnecessary gas which has not contributed to the growth is discharged from the upper part, the heavy induction heating object is used. Since the substrate to be grown is in close contact with the substrate holding jig by its own weight, the force applied to the portion to be held around the substrate to be grown is strong and slip lines, wafer warpage, etc. occur, making it fragile like GaAs substrates. The material had a fatal defect that the substrate was broken in some cases. Further, when a device such as a light emitting device is manufactured using such an epitaxial growth substrate, the yield and the device performance such as reliability are adversely affected. As described above, in the vertical vapor phase growth apparatus using the conventional high-frequency induction heating system of the structure in which the raw material gas is supplied from the lower portion and the unnecessary gas that does not contribute to the growth is discharged from the upper portion, There was a problem that the quality of the epitaxial growth layer deteriorated due to the cause.

[0012]

SUMMARY OF THE INVENTION The present invention has been made in consideration of the above points, and includes a vertical reaction tube for introducing a reaction gas from a lower portion and discharging the reaction gas to an upper portion, and a main surface downward. A vertical vapor phase growth apparatus using a high frequency induction heating method, comprising: a growth substrate held only at a peripheral portion thereof and an induction heated body for heating the growth substrate. Providing a jig for transferring a substrate while increasing the positional accuracy regardless of the size of the wafer.
Regardless of the size of the wafer, hold the wafer by increasing the position accuracy when inserting the wafer, improve the uniformity of the film thickness, and the defects such as the slip line due to the thermal strain and the warp of the wafer. And the like. In claim 3, the substrate is transported with high positional accuracy regardless of the size of the wafer, the uniformity of the film thickness is improved, and the slip caused by thermal strain is caused. Claim 5: To reduce the occurrence of defects such as lines, warp of a wafer, etc., and to reduce the carry-in of impurities into the reaction chamber by carrying the substrate while leaving the induction-heated object in the reaction chamber. In claim 5, the adhesion, which was still a problem in claim 4, is improved. In claim 6, defects such as slip lines caused by the self-weight of the induction heating body, wafer warpage, and wafer cracking occur. Reduce the billing According to claim 7, in claim 6, the position accuracy at the time of inserting the wafer is increased regardless of the size of the wafer to hold the wafer, the uniformity of the film thickness is improved, and the thermal strain is caused. Reducing the occurrence of defects such as a certain slip line, warpage of the wafer, and the like, claim 8 in claim 6, further reducing the carry-in of impurities into the reaction chamber, and claim 9 in claim 8. In claim 10, further, the substrate transfer is performed with high positional accuracy regardless of the size of the wafer.
Therefore, it is possible to control the position of the induction-heated body, which is still a problem. The purpose of this is to reduce the occurrence and to hold the wafer by increasing the positional accuracy regardless of the size and shape of the wafer.

[0013]

In order to achieve the above object, a vertical vapor phase growth apparatus according to claim 1 is installed in a reaction chamber, and a vertical reaction system in which a reaction gas is introduced from the lower part and discharged to the upper part. A tube, and an induction-heated body mounted on the back surface of the growth substrate with the main surface facing downward in the reaction tube,
In a vertical vapor phase growth apparatus for performing crystal growth using a high frequency induction heating method, a supporting rod that is inserted into the reaction tube and rotates in the reaction tube, and a main surface of the substrate to be grown which is held by the supporting rod and is directed downward. Equipped with a board holding jig that holds the
When transporting the substrate to be grown, hold it on a substrate holding jig in a separate room, move it to the reaction chamber, and then hold the substrate holding jig so that it can be held in the substrate holding jig receiving part provided on the support rod. The substrate holding jig includes a cylindrical main body into which the induction-heated body can be inserted, and a main surface which is provided at a lower portion of the main body and protrudes at right angles to the axial direction of the rotating support rod. A substrate holding claw having a plurality of flat or broken portions for holding the peripheral portion of the substrate to be grown, and an outside of the main body which is provided on the upper portion of the main body and is engaged with the substrate holding jig receiving portion of the supporting rod. It has a holding ring portion having a diameter larger than the diameter, and is detachable from the support rod.

A vertical vapor phase growth apparatus according to a second aspect of the present invention is installed in a reaction chamber, and has a vertical reaction tube for introducing a reaction gas from a lower part and discharging the reaction gas to an upper part, and a vertical reaction tube inserted in the reaction tube and rotated in the reaction tube. A supporting rod, a substrate holding jig which holds the substrate to be grown with its main surface facing downward only at its peripheral portion and is held by the supporting rod located above the back surface of the substrate to be grown, In a vertical vapor deposition apparatus having an induction-heated body directly mounted on the back surface and performing crystal growth using a high-frequency induction heating method, the bottom surface of the induction-heated body has an area of the growth substrate. In addition, the substrate holding jig has a plurality of substrate holding claws at right angles to the axial direction of the rotating support rod, and the upper surface of the substrate holding claws, that is, the surface of the substrate holding claw that contacts the growth substrate. Has a stepped portion that is shallower than the thickness of the substrate to be grown. And having a structure in which the growth substrate is held.

A vertical vapor phase growth apparatus according to a third aspect of the present invention is installed in a reaction chamber and has a vertical reaction tube for introducing a reaction gas from a lower part and discharging the reaction gas to an upper part, and a vertical reaction tube inserted in the reaction tube and rotated in the reaction tube. A supporting rod, a substrate holding jig which holds the substrate to be grown with its main surface facing downward only at its peripheral portion and is held by the supporting rod located above the back surface of the substrate to be grown, In a vertical vapor phase growth apparatus having an induction heated body directly mounted on the back surface and performing crystal growth using a high frequency induction heating method, the area of the bottom surface of the induction heated body is the growth substrate. The substrate holding jig is larger than the substrate holding jig so that the substrate can be held in the substrate holding jig in a separate chamber and then moved to the reaction chamber and held in the substrate holding jig receiving portion provided on the support rod. As a tool, a cylindrical body capable of containing the induction-heated body A plurality of substrate holding claws for holding the peripheral portion of the growth substrate with its main surface downward projecting perpendicularly to the axial direction of the support rod that the rotation is provided in the lower part of the body,
A first substrate which is provided on the upper part of the main body and has a holding ring portion larger than the outer diameter of the main body engaged with the substrate holding jig receiving portion of the support rod, and is attachable to and detachable from the support rod. The holding jig and the guided substrate which is larger than the growing substrate directly mounted on the back surface of the growing substrate with the main surface facing downward on the first substrate holding jig and slightly smaller than the inner diameter of the substrate holding jig. A substrate holding jig having a heating body and an insulating plate having the same diameter as that of the heating body is used, and the substrate to be grown is transported by the substrate holding jig.

A vertical vapor phase growth apparatus according to a fourth aspect of the present invention is installed in a reaction chamber and has a vertical reaction tube for introducing a reaction gas from a lower portion and discharging the reaction gas to an upper portion, and a vertical reaction tube inserted into the reaction tube and rotating in the reaction tube. A supporting rod, a substrate holding jig which holds the substrate to be grown with its main surface facing downward only at its peripheral portion and is held by the supporting rod located above the back surface of the substrate to be grown, In a vertical vapor phase growth apparatus that has an induction-heated element directly mounted on the backside and performs crystal growth using a high-frequency induction heating method, the induction-heated element always reacts even when the growth substrate is set. The inside of the reaction chamber where the outside air including the tube does not directly enter, the substrate holding jig with the substrate to be grown attached in a separate chamber is moved from the lateral direction to the reaction chamber and is held by the support rod, so that the back surface of the substrate to be grown is covered. The induction heater moves downward from the susceptor standby As shown in the figure, a susceptor support rod that is vertically movable independently of the support rod that holds the substrate holding jig to which the growth substrate is attached, and a position above the substrate holding jig that is held by the support rod. And a susceptor standby portion that operates.

A vertical vapor phase growth apparatus according to a fifth aspect is the vertical vapor phase growth apparatus according to the fourth aspect, wherein when the induction-heated body is loaded on the back surface of the growth substrate, the growth substrate is grown. Is characterized by having a structure having a vertical play with respect to the susceptor support rod that rotates together with the support rod above the back surface of the.

A vertical vapor phase growth apparatus according to a sixth aspect of the present invention is installed in a reaction chamber and has a vertical reaction tube for introducing a reaction gas from a lower part and discharging it to an upper part, and a vertical reaction tube inserted in the reaction tube and rotated in the reaction tube. A supporting rod, a substrate holding jig which holds the substrate to be grown with its main surface facing downward only at its peripheral portion and is held by the supporting rod located above the back surface of the substrate to be grown, In a vertical vapor phase growth apparatus that has an induction-heated body directly mounted on the back surface and performs crystal growth using a high-frequency induction heating method, the induction-heated body is above the back surface of the substrate to be grown. A first induction-heated body held by a susceptor-supporting bar rotating together with the support bar in FIG. 1, and a first induction-heating body between the first induction-heated body and the growth substrate. Lighter than the first induction-heated body and directly stacked on the back surface of the substrate to be grown. Wherein the second is divided into a target induction heating body in which.

A vertical vapor deposition apparatus according to a seventh aspect is the vertical vapor deposition apparatus according to the sixth aspect, wherein the second induction-heated body is larger than the growth substrate, and the substrate holding treatment is performed. The tool has a plurality of substrate holding claws at right angles to the axial direction of the rotating support rod, and the upper surface of the substrate holding claws, that is, the surface in contact with the growth substrate has a step shallower than the thickness of the growth substrate. It has a structure in which a portion is formed and the stepped portion holds the growth substrate.

A vertical vapor deposition apparatus according to claim 8 is the vertical vapor deposition apparatus according to claims 6 and 7, wherein the second induction-heated body is above the back surface of the growth substrate. The structure is characterized in that it is held with play in the vertical direction with respect to the first induction-heated body held by the susceptor support rod that rotates together with the support rod.

A vertical vapor phase growth apparatus according to a ninth aspect is the vertical vapor phase growth apparatus according to the eighth aspect, wherein the second object to be heated is larger than the substrate to be grown, An insulating plate, which is larger than the growth substrate and slightly smaller than the inner diameter of the substrate holding jig and has the same diameter as the second induction heating body, is inserted between the induction heating body and the growth substrate. And

A vertical vapor deposition apparatus according to a tenth aspect is the vertical vapor deposition apparatus according to the sixth aspect, wherein the first induction-heated body always has a reaction tube even when the growth substrate is set. It is in the reaction chamber where the outside air does not enter directly, and the substrate holding jig with the substrate to be grown and the second induction-heated body attached in a separate chamber is moved from the lateral direction to the reaction chamber and is held by the support rod. In the vapor phase epitaxy apparatus, the first induction-heated body is moved vertically from the susceptor standby portion to a position on the second induction-heated body that is not in contact with the second induction-heated body independently of the rotating support rod. The structure is characterized in that it has a movable susceptor support rod and a susceptor standby portion above the substrate holding jig held by the support rod.

A vertical vapor phase growth apparatus according to claim 11 is installed in a reaction chamber and has a vertical reaction tube for introducing a reaction gas from a lower part and discharging it to an upper part, and a main surface of the reaction tube facing downward. In the vertical vapor phase growth apparatus having a heated object to be directly contacted on the back surface of the substrate to be grown and performing crystal growth using a high frequency induction heating method, A first first induction-heated body held by a susceptor support rod which rotates together with a support rod above the back surface of the substrate, and a first induction-heated body in direct contact with the back surface of the substrate to be grown. It is divided into a second induction-heated body which is lighter than the heating body and larger than the growth substrate, and the second induction-heating body is held by a rotating support rod above the back surface of the growth substrate. The substrate to be grown is held by the first substrate holding jig And having a structure that is held in the second of the induction heating member by the second substrate holding jig separate from the first substrate holding jig.

[0024]

Therefore, the vertical vapor phase growth apparatus according to claim 1 is
A high-frequency induction heating system is used, which has a vertical reaction tube that introduces reaction gas from the lower part and discharges it to the upper part, and an induction heating object that is loaded on the back surface of the growth substrate with the main surface facing downward. In a vertical vapor phase growth apparatus that performs crystal growth by holding the substrate to be grown, the substrate holding jig is moved to the reaction chamber after holding the substrate to be grown on the substrate holding jig in a separate chamber for transporting the substrate to be grown. A cylindrical main body into which an induction-heated body can be inserted so that it can be held in a substrate holding jig receiving section provided, and a projection provided at a lower portion of the main body at a right angle to the axial direction of the rotating support rod. Substrate holding claw having a plurality of flat or broken portions for holding the peripheral portion of the substrate to be grown with its main surface facing downward, and engaging with the substrate holding jig receiving portion of the support rod provided on the upper portion of the main body And a holding ring portion larger than the outer diameter of the main body,
Since it can be attached to and detached from the support rod, the substrate to be grown whose main surface faces downward in a separate chamber is held in the substrate holding claw having the step portion of the substrate holding jig in the reaction chamber when the substrate to be grown is transferred. By holding the holding ring part on the substrate holding jig receiving part provided on the support rod, the substrate can be transferred with good reproducibility so that it does not move even on a substrate to be grown that is sufficiently smaller than the inner diameter of the cylindrical body. it can. When a substrate to be grown having a size about the same as the inner diameter of the main body is used, the substrate can be conveyed with good reproducibility so that even a flat substrate holding claw without a step does not move. As described above, according to the present invention, it is possible to provide a jig for transferring a substrate while increasing the positional accuracy regardless of the size of the wafer. In addition, polycrystal or the like is deposited on the downstream side of the growth substrate. In particular, although there are many parts near the induction-heated body, the substrate holding jig that can be attached and detached in that area can be exchanged and washed with aqua regia, etc., so that dirt inside the reaction chamber such as the induction-heated body can be reduced. The frequency of large-scale maintenance such as removing the reaction tube can be reduced. Further, since the contamination of the induction-heated body is reduced, the number of times of cleaning the induction-heated body is reduced, and the degassing step after cleaning can be reduced.

A vertical vapor phase growth apparatus according to a second aspect is installed in a reaction chamber, and a vertical reaction tube for introducing a reaction gas from a lower portion and discharging the reaction gas to an upper portion, and a vertical reaction tube inserted into the reaction tube and rotated in the reaction tube. A supporting rod, a substrate holding jig which holds the substrate to be grown with its main surface facing downward only at its peripheral portion and is held by the supporting rod located above the back surface of the substrate to be grown, In a vertical vapor phase growth apparatus having an induction heated body directly mounted on the back surface and performing crystal growth using a high frequency induction heating method, the area of the bottom surface of the induction heated body is set to the growth substrate. And the substrate holding jig is
A plurality of substrate holding claws are provided at right angles to the axial direction of the rotating support rod, and a step portion shallower than the thickness of the growth substrate is provided on the upper surface of the substrate holding claw, that is, the surface in contact with the growth substrate. Since it is formed and has a structure in which the substrate to be grown is held on the stepped portion, the substrate holding claw having the stepped portion holds the wafer by increasing the positional accuracy when inserting the wafer regardless of the size of the wafer. be able to. In addition, since the area of the bottom surface of the induction-heated body is made larger than that of the growth substrate, the edge effect is reduced, the thickness unevenness of the vapor phase growth layer around the wafer can be improved, and the film thickness within the wafer surface can be improved. It is possible to obtain a vapor phase growth layer having excellent uniformity. Further, since the temperature difference between the peripheral portion and the central portion of the growth substrate due to the temperature distribution of the induction-heated body is reduced and the thermal distortion of the growth substrate is suppressed, the occurrence of defects such as slip lines due to this cause. It can be suppressed. Furthermore, since the temperature distribution within the wafer surface is made uniform, the distribution of the film characteristics that was caused by the temperature distribution is also improved,
Further, a uniform and high quality crystal growth layer can be obtained. This is effective even if the support rod and the substrate holding jig are integrated.

A vertical vapor phase growth apparatus according to a third aspect of the present invention is installed in a reaction chamber and has a vertical reaction tube for introducing a reaction gas from a lower portion and discharging the reaction gas to an upper portion, and a vertical reaction tube inserted into the reaction tube and rotating in the reaction tube. A supporting rod, a substrate holding jig which holds the substrate to be grown with its main surface facing downward only at its peripheral portion and is held by the supporting rod located above the back surface of the substrate to be grown, In a vertical vapor phase growth apparatus having an induction heated body directly mounted on the back surface and performing crystal growth using a high frequency induction heating method, the area of the bottom surface of the induction heated body is the growth substrate. The substrate holding jig is larger than the substrate holding jig so that the substrate can be held in the substrate holding jig in a separate chamber and then moved to the reaction chamber and held in the substrate holding jig receiving portion provided on the support rod. As a tool, a tubular body capable of containing the induction-heated body A plurality of substrate holding claws for holding the peripheral portion of the growth substrate with its main surface downward projecting perpendicularly to the axial direction of the support rod that the rotation is provided in the lower part of the body,
A first substrate which is provided on the upper part of the main body and has a holding ring portion larger than the outer diameter of the main body engaged with the substrate holding jig receiving portion of the support rod, and is attachable to and detachable from the support rod. The holding jig and the guided substrate which is larger than the growing substrate directly mounted on the back surface of the growing substrate with the main surface facing downward on the first substrate holding jig and slightly smaller than the inner diameter of the substrate holding jig. The substrate holding jig is characterized by having a heating body and an insulating plate having a diameter similar to that of the heating body, and the substrate to be grown is transported by the substrate holding jig. Even when holding a substrate that is sufficiently smaller than the inner diameter of the first substrate holding jig, it is not necessary to provide a step on the substrate holding claw, and the movement of the growth target substrate during substrate transfer can be prevented. You can Therefore, regardless of the size of the wafer, the positional accuracy of the wafer can be increased and the substrate can be transferred. Also, since the area of the bottom surface of the induction-heated body is made larger than that of the growth substrate, the edge effect is reduced,
The thickness unevenness of the vapor phase growth layer around the wafer can be improved,
It is possible to obtain a vapor phase growth layer having excellent uniformity within the wafer surface. Further, since the temperature difference between the peripheral portion and the central portion of the growth substrate due to the temperature distribution of the induction-heated body is reduced and the thermal distortion of the growth substrate is suppressed, the occurrence of defects such as slip lines due to this cause. Since the temperature distribution is suppressed and the temperature distribution in the wafer surface is made uniform, the distribution of the film characteristics caused by the temperature distribution is also improved, and a more uniform and good quality crystal growth layer can be obtained. As another effect, the deposition of polycrystals on the main surface and side surfaces of the curb susceptor during crystal growth can be suppressed. In particular, the deposition of polycrystals on the main surface of the carbon susceptor causes a bad contact state between the carbon susceptor and the substrate to be grown and increases the temperature distribution as the number of times of growth increases, which adversely affects reproducibility and uniformity. Therefore, maintenance is required. Since this insulating plate is carried together with the first substrate holding jig when carrying the substrate, it can be replaced each time and washed with aqua regia together with the first substrate holding jig. It can reduce the amount of dirt in the room,
It is possible to reduce the frequency of large-scale maintenance such as cleaning the carbon susceptor by removing the reaction tube. Further, since the contamination of the induction-heated body is reduced, the number of times of cleaning the induction-heated body is reduced, and the degassing step after cleaning can be reduced.

An apparatus disclosed in Japanese Patent Application Laid-Open No. 61-242994 is known as a known example using an insulating plate which is mounted on a sample support and is detachable and which prevents the growth substrate from moving and holds the substrate. However, in this device, the surface in contact with the substrate is set as a rough surface so as not to move, which is different from the device using the self-weight of the insulating plate as in the device of the present invention. In this case, the surface contacting the substrate may be flat.

In the vertical vapor phase growth apparatus according to the fourth aspect, a susceptor support rod that is vertically movable independently of a support rod that holds a substrate holding jig to which a substrate to be grown is attached, and the susceptor support rod. Since the structure has a susceptor standby portion located above the held substrate holding jig, the substrate holding jig with the growth substrate whose main surface faces downward in a separate chamber is moved from the lateral direction to the reaction chamber. It can be moved and held on a support rod, and the induction target can be moved downward from the susceptor standby part and loaded on the back surface of the growth substrate, and the substrate can be transferred while leaving the induction heating target in the reaction chamber. The vertical vapor phase growth using the high-frequency induction heating method with a structure in which the raw material gas is supplied from the lower part and unnecessary gas that did not contribute to the growth is discharged from the upper part, because degassing etc. is facilitated. Even in the equipment, the growth substrate is When bets, has the effect of contamination of the reaction chamber due to adsorption, such as oxygen, it is reduced. Therefore, the quality deterioration of the growth layer can be prevented.

As a device provided with a mechanism for moving the induction-heated body up and down, there is a device capable of carrying out the pulse jet method of the second embodiment of Japanese Patent Application Laid-Open No. 5-47666. However, since the apparatus of the present invention does not have a susceptor moving mechanism for independently moving the substrate holding jig holding the growth substrate, the same effect cannot be expected.

In the vertical type vapor phase growth apparatus according to claim 5, in the vertical type vapor phase growth apparatus according to claim 4, there is still a problem of adhesion. It has a structure with vertical play against the susceptor support rod that rotates together with the support rod above the back surface of the substrate to be grown when loaded directly onto the substrate. Since it can move, even if the parallelism between the bottom surface of the induction-heated body and the back surface of the growth substrate deviates to some extent, the deviation can be absorbed, and a part of it cannot be pressed too strongly. A force is uniformly applied to the substrate holding claw, and the adhesion between the induction-heated body, the substrate to be grown, and the substrate holding claw is improved. Moreover, since the substrate can be held uniformly with good reproducibility, the effect of forming a film with good reproducibility is added.

Further, a main first induction-heated body fixed to a susceptor support rod which rotates together with the support rod above the back surface of the substrate to be grown, and a first induction-heated body.
Between the induction-heated body and the substrate to be grown, which is lighter than the first induction-heated body and does not come into contact with the first induction-heated body, and is directly stacked on the back surface of the growth-target substrate. In the vertical vapor deposition apparatus according to claim 6, which is divided into an induction heating body, the force applied to the growth substrate by the self-weight of the induction heating body is reduced,
Since the stress applied to the substrate to be grown can be reduced, defects such as slip lines and wafer warp can be reduced. Therefore, a good quality epitaxial growth layer can be obtained. Further, the first induction-heated body is always in the reaction chamber, and the second induction-heated body conveyed together with the substrate is thin, so cleaning is easy and adsorbed impurity gas can be easily degassed, so that oxygen or the like Contamination of the reaction chamber due to the adsorption of R.

An apparatus disclosed in Japanese Utility Model Publication No. 63-44463 is a known example in which the induction heating body is divided into an exchange section and a heating section. However, this was designed with the purpose of making the exchange part exchangeable, and in a vertical vapor phase growth apparatus in which a reaction gas is introduced from the lower part and discharged to the upper part, the substrate due to the self-weight of the induction-heated body is used. The effect of reducing the force applied to can not be expected.

The vertical vapor phase growth apparatus according to claim 7 is the vertical vapor phase growth apparatus according to claim 6, in which the area of the bottom surface of the second induction-heated body is larger than that of the growth substrate. The substrate holding jig has a plurality of substrate holding claws at right angles to the axial direction of the rotating support rod, and the upper surface of the substrate holding claws, that is, the surface in contact with the substrate to be grown, has a thickness larger than that of the substrate to be grown. Since a shallow step is formed and the substrate to be grown is held on the step, the substrate holding claw having the step increases the position accuracy when inserting the wafer regardless of the size of the wafer. Can hold the wafer. Further, by reducing the force applied to the growth substrate by the weight of the induction-heated body, defects such as slip lines and wafer warp are reduced. In addition, since the area of the bottom surface of the induction-heated body is made larger than that of the growth substrate, the edge effect is reduced and unevenness in the thickness of the vapor phase growth layer around the wafer can be improved. Can be better. Furthermore, since the temperature difference between the peripheral portion and the central portion of the growth substrate due to the temperature distribution of the induction-heated body is reduced and the thermal strain of the growth substrate is suppressed, the occurrence of defects such as slip lines due to this cause. It can be suppressed. In addition, the uniformity of the temperature distribution within the wafer surface is also improved, so that the distribution of the film characteristics caused by the temperature distribution can also be improved. As a result, it is possible to obtain a high-quality epitaxial growth layer having excellent uniformity within the wafer surface.

The vertical vapor phase growth apparatus according to claim 8 is the vertical vapor phase growth apparatus according to claim 6, wherein the second induction-heated body is supported above the rear surface of the growth substrate. Since the structure is held with vertical play with respect to the first induction-heated body held by the susceptor support rod that rotates together with the rod, it is added to the growth substrate by the weight of the induction-heated body itself. Defects such as slip lines due to reduced force,
Since the warp of the wafer is reduced and the second induction-heated body does not have to be taken out of the reaction chamber, degassing and the like are facilitated. This has the effect of further reducing the amount of impurities brought into the device. Therefore, contamination can be further reduced and deterioration of the quality of the grown layer can be prevented.

A vertical vapor phase growth apparatus according to a ninth aspect is the vertical vapor phase growth apparatus according to the eighth aspect, wherein the substrate is larger than the growth substrate between the second induction-heated body and the growth substrate. Since the insulating plate having the same diameter as the second induction-heated body, which is slightly smaller than the inner diameter of the holding jig, is inserted, the substrate to be grown is placed on the substrate holding claw of the substrate holding jig and the insulating plate is placed thereon. Since the substrate to be grown is held by the weight of the insulating plate, it is not necessary to provide a step on the substrate holding claw even when holding a substrate that is sufficiently smaller than the inner diameter of the substrate holding jig. It is possible to prevent the growth substrate from moving during this time. As described above, according to the present invention, it is possible to transfer the substrate with high wafer position accuracy regardless of the size of the wafer. In addition, since the area of the bottom surface of the induction-heated body is made larger than that of the growth substrate, the edge effect is reduced, the thickness unevenness of the vapor phase growth layer around the wafer can be improved, and the film thickness within the wafer surface can be improved. It is possible to obtain a vapor phase growth layer having excellent uniformity. Further, since the temperature difference between the peripheral portion and the central portion of the growth substrate due to the temperature distribution of the second induction-heated body is reduced and the thermal distortion of the growth substrate is suppressed, defects such as slip lines due to this cause are caused. Can be suppressed. Further, since the temperature distribution in the wafer surface is made uniform, the distribution of film characteristics caused by the temperature distribution is also improved, and a more uniform and high quality crystal growth layer can be obtained. In addition, the effect of suppressing the deposition of polycrystal on the carbon wafer during crystal growth can be obtained. Since this insulating plate is transferred together with the substrate holding jig during the transfer of the substrate, it can be replaced and cleaned each time, so that the frequency of large-scale maintenance such as removing the reaction tube and cleaning the carbon susceptor can be reduced.

A vertical vapor phase growth apparatus according to a tenth aspect is the vertical vapor phase growth apparatus according to the sixth aspect, which holds a substrate holding jig on which a substrate to be grown and a second induction heated body are attached. Since the structure has a susceptor support rod that can move in the vertical direction independently of the support rod and a susceptor standby portion above the substrate holding jig held by the support rod, the main surface faces downward in a separate room. The second substrate to be heated and the second substrate to be heated on which the second object to be heated are mounted are moved from the lateral direction to the reaction chamber and held by the supporting rod to grow the second member to be heated on induction. Move the induction heating element downward from the susceptor standby part to a position several mm away from the back surface of the substrate, that is, a position where the weight of the induction heating element is not transmitted to the growth substrate and induction heating is possible, Can be controlled. Further, the substrate can be transported while leaving the induction-heated body left in the reaction chamber, and when the growth substrate is set, contamination of the reaction chamber due to adsorption of oxygen and the like can be reduced and deterioration of the quality of the growth layer can be prevented. The effect that can be added is added.

According to the eleventh aspect of the vertical vapor phase growth apparatus, the first main body in which the induction heated body is held by the susceptor support rod which rotates together with the support rod above the back surface of the substrate to be grown. And the second induction-heated body, which is lighter than the first induction-heated body and directly larger than the growth-target substrate, which is directly in contact with the back surface of the growth-target substrate. The induction-heated body is held by a first substrate holding jig held by a rotating support rod above the back surface of the growth substrate, and the growth substrate is a second substrate different from the substrate holding jig. Since the structure is held on the second induction-heated body by the holding jig, the force applied to the growth substrate is not due to the heavy weight of the heavy induction-heated body, but the second substrate holding jig is used to The force mainly applied when held by the induction-heated body of the The force applied to the long substrate is reduced, since it is possible to reduce the stress applied to the growth substrate, defects such as slip lines, warpage of the wafer is reduced. Also, the second
Since the area of the bottom surface of the induction heated body is larger than that of the substrate to be grown, the edge effect is reduced, the unevenness of the vapor phase growth layer around the wafer can be improved, and the uniformity of the film thickness is improved. . Furthermore, since the temperature difference between the peripheral portion and the central portion of the growth substrate due to the temperature distribution of the induction-heated body is reduced and the thermal strain of the growth substrate is suppressed, the occurrence of defects such as slip lines due to this cause. It can be suppressed. Further, since the temperature distribution in the wafer surface is made uniform, the distribution of the film characteristics caused by the temperature distribution is also improved. As described above, with the apparatus of the present invention, it is possible to obtain a high-quality epitaxial growth layer having excellent uniformity within the wafer surface. Furthermore, by providing an appropriate position for attaching the second substrate holding jig, it is possible to use an amorphous wafer. In addition, the wafer can be held with high positional accuracy regardless of the size and shape of the wafer.

[0038]

Embodiments of the present invention will now be described in detail with reference to the drawings. FIG. 1 is a cross-sectional view showing a first embodiment corresponding to claims 1, 2, 4, and 5 of the vertical vapor phase growth apparatus of the present invention. Further, FIG. 2 shows A in FIG.
FIG. 3 is an enlarged view of the region, and FIG. 3 is a view seen from the direction B in FIG. 1. In these figures, the present invention is shown in a simplified form for easier understanding. In the figure, reference numeral 1 indicates a reaction tube installed in the reaction chamber, and the reaction tube 1 has a double tube structure made of quartz glass, and from the water supply port 2 provided at the lower part to the drain port 3 at the upper part. The reaction tube 1 is cooled by flowing cooling water. The raw material gas supply port 4 and the carrier gas supply port 5 into the reaction tube 1 are provided in the lower part of the reaction tube 1, and the gas discharge port 6 from the reaction tube 1 is provided in the upper part.

Between the gas supply ports 4 and 5 and the gas discharge port 6 in the reaction tube 1, a substrate holding jig 9 held by a rotating support rod 10 for holding a growth substrate 8 and an induction heating body. 70mm diameter and 35mm thick carbon susceptor 7
Has been arranged. Carbon susceptor 7 has a diameter of 50 m
m, one side of the growth substrate 8 having a thickness of 350 μm
A large carbon fixing screw 15 holds the susceptor support rod 14 which is larger than the support rod 10 and which is inserted into the support rod 10 above the support rod 10 and rotates together with the susceptor support rod 10. Is loaded on. That is, in this example, the carbon susceptor 7 is fixed to the susceptor support rod 14 by the carbon fixing screw 15. However, the carbon fixing screw 15 is long, and the lower portion of the susceptor support rod 14 has a diameter larger than that of the screw. There is a hole smaller than the head, and the structure is such that the weight of the susceptor support rod 14 is not added to the carbon susceptor 7 when the carbon susceptor 7 is loaded on the growth substrate 8. Further, the carbon susceptor 7 is rotated by moving the susceptor support rod 14 up and down by a moving mechanism such as a motor (not shown).
It can move up and down independently of. That is, when the susceptor support rod 14 is moved upward, the head of the carbon fixing screw 15 is caught on the susceptor support rod 14, so that the carbon susceptor 7 can be moved upward.

The substrate 8 to be grown whose main surface faces downward is held only by the peripheral portion by the substrate holding jig 9 held by the supporting rod 10. The substrate holding jig 9 has a cylindrical main body 9a having an inner diameter slightly larger than the outer diameter of the carbon susceptor 7 so that the carbon susceptor 7 as an induction-heated body can be fitted in and there is a little margin. A plurality of substrate holding claws 12 (three substrate holding claws in this example) provided on the lower portion and projecting at right angles to the axial direction of the rotating support rod 10.
And a step portion 16 of about 300 μm, which is shallower than the thickness of the growth substrate 8, is formed on the upper surface of the substrate holding claw 12, that is, the surface which is in contact with the growth substrate 8. The substrate to be grown 8 is held on. Further, the substrate holding jig 9 can be detached from the support rod 10, and is carried into the reaction tube 1 after the growth substrate 8 is set in another chamber,
A holding ring portion 26 having a larger diameter than the outer diameter of the main body 9a is provided above the substrate holding jig 9 so that the holding ring 25 can be held by the substrate holding jig receiving portion 25 provided on the support rod 10. The substrate holding jig 9 is held by the support rod 10 by engaging the portion 26 with the substrate holding jig receiving portion 25. Of course, like the susceptor support rod 14, the support rod 10 can also be moved vertically by a moving mechanism such as a motor (not shown) so that the substrate can be transferred between the support rod 10 and an arm that moves in a lateral direction in another chamber. That is, such a tubular body 9 into which the induction-heated body can be inserted.
a, a substrate holding claw 12 provided at the lower part of the main body and having a step portion 16 for holding the growth substrate 8 with its main surface facing downward,
By using the substrate holding jig 9 that is provided on the upper part of the main body and has the holding ring portion 26 that is larger than the outer diameter of the main body, and is detachable from the support rod 10, The substrate can be transported so that it does not move even on the sufficiently small growth substrate 8. Of course, when the diameter of the substrate 8 to be grown is close to the inner diameter of the main body 9a, the substrate holding claw 12 can hold the substrate sufficiently stably even if it has a flat shape without a step, so that the step may be omitted. . It should be noted that the effect of the substrate holding claw having the above stepped portion is that the substrate holding jig 10 as shown in FIG.
Even in the case of a conventional apparatus in which the 9 and the support rod 110 are integrated, it is clear that the growth substrate can be held with high positional accuracy at the time of insertion regardless of its size.

In the vertical vapor phase growth apparatus shown in FIGS.
The wafer set is usually carried out in a room separate from the reaction chamber, such as an N ₂ box, which does not come into direct contact with the outside air. However, a small amount of oxygen in the atmosphere is easily adsorbed on the porous carbon, so that the quality of the growth layer is improved. It will cause worse. Therefore, in this case, only the substrate holding jig 9 for holding the growth substrate 8 is removed and conveyed to another chamber, and the carbon susceptor 7 is attached to the reaction tube 1.
The oxygen in the atmosphere is not adsorbed so that it is not taken out from the reaction chamber containing. In addition, as the material of the substrate holding jig 9, an insulating material that is easily washed with aqua regia or the like is usually used, and in this embodiment, quartz that is easy to process and inexpensive is used. Then, the carbon susceptor 7 which is vertically movable independently of the rotating support rod 10 by the susceptor support rod 14 is provided with the substrate holding jig 9 held by the support rod 10.
From the susceptor standby portion 13 provided on the upper part of the substrate, the substrate is lowered below the inside of the substrate holding jig 9 and directly stacked on the back surface of the growth substrate 8 held only in the peripheral portion. With such a structure, the position of the growth substrate 8 with respect to the carbon susceptor 7 can be aligned with good reproducibility. In addition, as described above, the carbon susceptor 7 rotates the supporting rod 1
0 has a play in the vertical direction, and there is a gap between the carbon susceptor 7 and the substrate holding jig 9, and the carbon susceptor 7 can move a little. Bottom surface and growth substrate 8
Even if the parallelism of the back surface of the substrate is slightly deviated, the deviation can be absorbed, so that a part of the substrate holding claws 12 is uniformly pressed without being pressed too strongly, and the carbon susceptor 7, Adhesion between the growth substrate 8 and the substrate holding claw 12 is always good, reproducibility is good, and the substrate can be held uniformly. Further, with such a configuration, the deposition of polycrystal on the side surface of the carbon susceptor 7 can be reduced, and the substrate holding jig 9 can be cleaned at any time. Therefore, the reaction tube 1 is removed to clean the carbon susceptor 7 and the like. The frequency of such large-scale maintenance can be reduced. Further, since the contamination of the induction-heated body 7 is reduced, the number of times the induction-heated body is cleaned is reduced, and the degassing step after cleaning can be reduced.

In the vertical vapor phase growth apparatus shown in FIGS. 1 to 3, the gas supplied from the source gas supply port 4 is blown onto the main surface of the substrate 8 to be grown and heads to the gas discharge port 6.
That is, the growth substrate 8 is arranged at right angles to the gas flow from the lower part to the upper part in the reaction tube 1. Then, the high frequency heating coil 11 provided around the reaction tube 1
The carbon susceptor 7 generates heat by applying a high frequency electric field to heat the growth substrate 8, and crystal growth occurs due to decomposition of the source gas reaching the surface of the growth substrate 8 and surface reaction on the surface of the growth substrate 8. It is a thing. During growth, the substrate 8 to be grown, the carbon susceptor 7, etc. are also rotated by the rotating support rod 10.

In the vertical vapor phase growth apparatus having such a structure, the flow direction of the gas from the gas supply ports 4 and 5 and the flow direction of the gas heated by the heat of the carbon susceptor 7 and having buoyancy coincide with each other. Therefore, the unnecessary gas that has not contributed to the growth is difficult to mix with the raw material gas, the composition change of the raw material gas is prevented, and high quality crystals can be formed. The thin arrows in the figure show the outline of the gas flow. Further, since the area of the bottom surface of the carbon susceptor 7 is made larger than that of the substrate 8 to be grown, the flow velocity on the substrate 8 to be grown is almost equal, and the region where the flow velocity becomes fast moves to the edge part of the carbon susceptor 7, Since the source gases supplied on the growth substrate 8 are substantially equal in the plane, the growth rate at the edge portion of the growth substrate 8 does not increase, and the uneven thickness of the growth layer in the peripheral portion of the wafer is not generated. An improved vapor phase growth layer having excellent in-plane uniformity can be obtained. If the condition that the vicinity of the center is uniform is selected even if the ratio of the supply amount of the source gas to the supply amount of the carrier gas is changed or other parameters are changed, the swelling of the edge portion is selected, the carbon susceptor 7 and the substrate to be grown are grown. If the size of 8 is the same, the circumference is about 1c
However, it could be improved by making the area of the bottom surface of the carbon susceptor 7 larger than that of the growth substrate 8. For this reason, it is desirable that the carbon susceptor 7 is larger than the substrate by 1 cm or more on each side.

Here, a conventional structure of a carbon susceptor having the same diameter as the substrate and a vertical vapor phase growth device having a structure in which the carbon susceptor 7 of this embodiment is 1 cm larger on one side are used. An example of the film thickness distribution when using is shown in FIGS. 4 and 5, respectively. 4 and 5
As is clearer, it can be seen that the apparatus of this embodiment has improved uniformity in the peripheral portion of the wafer. Also,
Since the temperature difference between the peripheral part and the central part of the growth substrate due to the temperature distribution of the induction-heated body is reduced and the thermal strain of the growth substrate is suppressed, the occurrence of defects such as slip lines due to this cause is suppressed. Further, since the temperature distribution of the substrate to be grown is made uniform, the distribution of film characteristics caused by the temperature distribution is also improved, and a more uniform and high quality crystal growth layer can be obtained.

Next, FIG. 6 is a sectional view of a substrate holding portion showing a second embodiment of the vertical vapor phase growth apparatus of the present invention, which explains claim 3 of the present invention. The overall structure of the apparatus according to this embodiment is the same as that of the first embodiment shown in FIG. 1, but the difference from the first embodiment is that the substrate holding claw 12 has a flat shape without step portions, In addition, the insulating plate 24 is inserted between the carbon susceptor 7 and the back surface of the growth substrate 8. With this structure, when the substrate to be grown is placed on the substrate holding claws 12 of the detachable substrate holding jig 9 and the insulating plate 24 is placed on the substrate, the insulating plate 2 is removed.
The substrate to be grown 8 can be pressed by its own weight, and even when holding a substrate sufficiently smaller than the inner diameter of the substrate holding jig 9, it is not necessary to provide a stepped portion on the substrate holding claw 12 and the substrate to be grown can be grown during substrate transfer. It is possible to prevent the movement of the substrate,
The effect similar to that of the apparatus of the embodiment is obtained. Other,
The apparatus of this embodiment also has the effect of suppressing the deposition of polycrystal on the main surface of the carbon susceptor during crystal growth. The deposition of polycrystals on the carbon susceptor 7 deteriorates the contact state between the carbon susceptor 7 and the substrate 8 to be grown and increases the temperature distribution as the number of times of growth increases, which adversely affects reproducibility and uniformity. So maintenance is required. However, in the apparatus of this embodiment, the insulating plate 24 is inserted between the carbon susceptor 7 and the substrate 8 to be grown, and this insulating plate 24 is carried together with the substrate holding jig 9 at the time of carrying the substrate. Since replacement and cleaning can be performed, another effect that the frequency of large-scale maintenance such as cleaning the carbon susceptor by removing the reaction tube 1 can be reduced can be obtained.

By the way, in the vertical type vapor phase growth apparatus shown in the first and second embodiments, defects such as slip lines due to the self-weight of the induction-heated body, wafer warpage, and wafer cracking still occur. Is not suppressed. Therefore, next, an embodiment of an apparatus capable of improving this will be shown. FIG. 7 is a cross-sectional view showing a third embodiment of the vertical vapor phase growth apparatus of the present invention, which explains Claims 6, 7, and 10 of the present invention. Further, FIG. 8 is an enlarged view of the area C in FIG. 7, and FIG. 9 is a view seen from the direction D in FIG. 7. In these figures, the present invention is shown in a simplified form for easier understanding. 7 to 9, reference numeral 1 indicates a reaction tube installed in the reaction chamber, and the reaction tube 1 has a double tube structure made of quartz glass, and has a water supply port 2 provided at the bottom and an upper part. The reaction tube 1 is cooled by flowing cooling water into the drainage port 3. The raw material gas supply port 4 and the carrier gas supply port 5 into the reaction tube 1 are provided in the lower part of the reaction tube 1, and the gas discharge port 6 from the reaction tube 1 is provided in the upper part.

Between the gas supply ports 4 and 5 and the gas discharge port 6 in the reaction tube 1, a substrate holding jig 9 which holds a substrate 8 to be grown and which is held by a rotating support rod 10, and a main first jig. A carbon susceptor 7 having a diameter of 70 mm and a thickness of 35 mm, which is one induction heated body, is arranged. Carbon susceptor 7
Is 1 cm larger on one side than the growth substrate 8 having a diameter of 50 mm and a thickness of 350 μm, and the carbon fixing screw 15 is longer than the susceptor support rod 14 which is inserted into the support rod 10 above and rotates with the support rod 10. It is fixed with play in the vertical direction. That is, in this example, the carbon susceptor 7 is fixed to the susceptor support rod 14 by the carbon fixing screw 15,
The carbon fixing screw 15 is long, and there is a hole in the lower portion of the susceptor support rod 14 that is larger than the diameter of the screw and smaller than the head of the screw. Has become. Further, the carbon susceptor 7 can be moved up and down independently of the rotating support rod 10 by moving the susceptor support rod 14 up and down by a moving mechanism such as a motor (not shown).

The substrate 8 to be grown with its main surface facing downward is held only by the peripheral portion by the substrate holding jig 9 held by the supporting rod 10. The substrate holding jig 9 has a cylindrical main body 9a having an inner diameter slightly larger than the outer diameter of the carbon susceptor 7 so that the carbon susceptor 7 which is the first induction-heated body can be completely accommodated and there is some margin. The upper surface of the substrate holding claw 12 has a plurality of substrate holding claws 12 (three substrate holding claws in this example) provided on the lower portion of the main body and projecting at right angles to the axial direction of the rotating support rod 10. That is, a step portion 16 having a thickness of about 300 μm, which is shallower than the thickness of the growth substrate 8, is formed on the surface of the growth substrate 8 in contact with the growth substrate 8, and the growth substrate 8 is held by the step portion 16. And
Directly on the back surface of the growth substrate 8 is mounted a carbon wafer, which is a second induction-heated body and has a thickness of 3 mm and a diameter of 70 mm, which is disk-shaped (wafer-shaped) and is 1 cm larger on one side than the growth substrate 8. Has been done. The substrate holding jig 9 can be detached from the support rod 10, and the carbon wafer 20 is directly loaded on the growth substrate 8 and its back surface in a separate chamber and then carried into the reaction tube 1 to the support rod 10. Retained. At this time, in order that the substrate holding jig 9 can be held by the substrate holding jig receiving portion 25 provided on the support rod 10, the holding ring portion 26 having a larger diameter than the outer diameter of the main body 9a is provided above the substrate holding jig 9. The substrate holding jig 9 is held by the support rod 10 by engaging the holding ring portion 26 with the substrate holding jig receiving portion 25. In this embodiment, the step 16 is provided on the substrate holding claw 12. However, when such a substrate holding method is used, the growth substrate 8 can be transported without moving due to the weight of the carbon wafer 20, so that when the substrate is inserted. If you can set the wafer with good reproducibility,
The substrate holding claw 12 does not have to be provided with the step portion.

Further, in the above apparatus, the wafer set is usually carried out in a place separate from the reaction chamber, such as an N ₂ box, which is not in direct contact with the outside air. This tends to cause deterioration of the quality of the growth layer. Therefore, in this case, it is preferable to coat the surface of the carbon wafer 20 with a coating such as a SiC film for reducing the adhesion of impurities. Further, the carbon susceptor 7 is prevented from coming out of the reaction chamber including the reaction tube 1 so that a trace amount of oxygen or the like in the atmosphere is not adsorbed. Then, the vertically movable carbon susceptor 7 descends from the susceptor standby portion 13 to the lower inside of the substrate holding jig 9 by a moving mechanism such as a motor, and the growth substrate 8 held only in the peripheral portion The carbon wafer 20 directly held on the back surface is held at a position not in contact with the carbon wafer 20, for example, several mm apart (with a gap 22 provided). With such a configuration, the positions of the growth substrate 8 with respect to the carbon susceptor 7 and the carbon wafer 20 can be aligned with good reproducibility. Also, carbon wafer 2
Since 0 is directly stacked on the back surface of the substrate 8 to be grown,
Even if a part of the carbon wafer 2 is not pressed too strongly, a force is evenly applied to the plurality of substrate holding claws 12.
0, the substrate 8 to be grown, and the substrate holding claw 12 have good adhesion and can hold the substrate uniformly with good reproducibility.

In the vertical vapor phase growth apparatus shown in FIGS. 7 to 9, the gas supplied from the source gas supply port 4 is blown to the main surface of the substrate 8 to be grown and heads to the gas discharge port 6.
That is, the growth substrate 8 is arranged at right angles to the gas flow from the lower part to the upper part in the reaction tube 1. Then, the high frequency heating coil 11 provided around the reaction tube 1
By applying a high-frequency electric field by the above, heat is generated in the carbon susceptor 7 and the carbon wafer 20 to heat the growth substrate 8, the decomposition of the source gas reaching the surface of the growth substrate 8 and the surface reaction on the surface of the growth substrate 8 are caused. The crystal is grown by. In our experiment, it was not possible to raise the temperature suitable for crystal growth with only the thin carbon wafer 20, for example, 700 to 850 ° C. for AlGaAs type materials, but as in this example. When the carbon susceptor 7 and the carbon wafer 20 were used, heating was possible. Of course, the radiant heat from the carbon susceptor 7 is not the main one. The position of the carbon susceptor 7 may be a position where the carbon susceptor 7 can be sufficiently heated.

In the vertical type vapor phase growth apparatus having such a structure, the flow direction of the gas from the gas supply ports 4 and 5 and the flow of the gas having buoyancy which is heated by the heat of the carbon susceptor 7 and the carbon wafer 20. Since the directions are coincident with each other, the unnecessary gas that has not contributed to the growth hardly mixes with the raw material gas, the composition change due to the temperature rise of the raw material gas is prevented, and a high quality crystal can be formed. The thin arrows in the figure show the outline of the gas flow. Also, carbon wafer 2
Since the area of the bottom surface of 0 is made larger than that of the growth substrate 8, the flow velocity on the growth substrate 8 is almost equal, and the region where the flow velocity becomes faster moves to the edge portion of the carbon wafer 20,
Since the supplied source gases on the growth substrate 8 are almost equal in the plane, the growth rate at the edge portion of the growth substrate 8 does not increase, and the unevenness of the thickness of the growth layer around the wafer is not caused. Is improved, and a vapor phase growth layer having excellent uniformity within the wafer surface can be obtained. When the condition that the vicinity of the center is uniform is selected even if the ratio of the supply amount of the source gas to the supply amount of the carrier gas is changed or other parameters are changed, the swelling of the edge portion is selected. 8
If the size is the same, the circumference was about 1 cm, but
This can be improved by making the area of the bottom surface of the carbon wafer 20 larger than that of the growth substrate 8. For this reason, it is desirable that the carbon wafer 20 be larger than the substrate by 1 cm or more on each side.

Further, in the vertical vapor phase growth apparatus of this embodiment,
Since the temperature difference between the peripheral portion and the central portion of the growth substrate 8 due to the temperature distribution of the induction-heated body is reduced and the thermal strain of the growth substrate is suppressed, the occurrence of defects such as slip lines is also caused by this. Further, since the temperature distribution of the substrate to be grown is suppressed and the temperature distribution of the substrate to be grown is made uniform, the distribution of film characteristics caused by the temperature distribution is also improved, and a more uniform and high quality crystal growth layer can be obtained. Further, since only the thin carbon wafer 20 which is the object to be heated is placed on the growth substrate 8, it is possible to reduce the force applied to the growth substrate 8 and reduce defects such as slip lines and warp of the wafer. However, since a good quality epitaxial growth layer can be obtained, the yield and the like when the device is manufactured is improved. It is obvious that this effect is effective even when the size of the carbon wafer 20 is the same as the size of the growth substrate 8. Further, since the carbon susceptor 7 which is the first induction-heated object is in the reaction chamber and the carbon wafer 20 which is the second induction-heated object which is transported together with the substrate is thin, it is easy to clean and the adsorbed impurities are absorbed. Since the gas can be easily degassed, the contamination of the reaction chamber due to the adsorption of oxygen or the like can be reduced and the deterioration of the quality of the growth layer can be prevented.

Next, FIG. 10 is a sectional view of a substrate holding part showing a fourth embodiment of the vertical vapor phase growth apparatus of the present invention, which explains claim 8 of the present invention. The overall structure of this embodiment is almost the same as that of the third embodiment shown in FIG. 7, except that the carbon wafer 20 is attached to the carbon susceptor 7 by the second carbon fixing screw 23. In contrast, the structure is such that it is held with play. The carbon fixing screw 23 is long, the carbon susceptor 7 has a hole larger than the diameter of the screw and smaller than the head of the screw, and has a function of preventing the weight of the carbon susceptor 7 from being applied to the growth substrate 8. Further, when the carbon susceptor 7 is moved upward, the head of the carbon fixing screw 23 is caught on the upper surface of the carbon susceptor 7, so that the carbon wafer 20 can be moved upward. That is, since the carbon susceptor 7 and the carbon wafer 20 are integrated, it is not necessary to transfer the carbon wafer 20 together with the substrate holding jig 9 during the transfer of the substrate, and the carbon susceptor 7 and the carbon susceptor 7 should be left in the reaction chamber. Therefore, contamination of the reaction chamber due to oxygen or the like in the atmosphere of the separate chamber (substrate insertion chamber) can be further reduced, and a higher quality epitaxial growth layer can be obtained.

Although not shown, as shown in claim 9 of the present invention, insulation is provided between the carbon wafer 20 of FIG. 10 and the rear surface of the substrate 8 to be grown as in the apparatus of the second embodiment of FIG. The plate 24 can be inserted, and by inserting the insulating plate 24, even if the substrate holding claw 12 does not have a step portion, the growth substrate 8 is grown by the weight of the insulating plate 24 while maintaining the above effect.
It is possible to prevent the movement of the substrate to be grown during the transfer of the substrate, since it is not necessary to provide a step on the substrate holding claw 12 even when holding the substrate sufficiently smaller than the inner diameter of the substrate holding jig 9. it can. In this case, since it is necessary to reduce the force applied to the substrate, it is desirable that the insulating plate 24 be thin. Further, when the insulating plate 24 is used, the deposition of polycrystal on the carbon wafer 20 during crystal growth can be suppressed. That is, the deposition of polycrystal on the carbon wafer 20 and the substrate 8 to be grown 8 will increase as the number of times of growth increases.
It is necessary to perform maintenance because it deteriorates the contact state with and increases the temperature distribution, which adversely affects reproducibility and uniformity, but an insulating plate is inserted between the carbon wafer 20 and the growth substrate 8. By doing so, the deposit mainly adheres to the insulating plate and the deposition of polycrystals on the carbon wafer 20 is suppressed, and this insulating plate is carried together with the substrate holding jig 9 at the time of carrying the substrate. Every time exchange,
Since the cleaning can be performed, the effect of reducing the frequency of large-scale maintenance such as removing the reaction tube 1 and cleaning the carbon susceptor 7, the carbon wafer 20 and the like can be obtained.

Next, FIG. 11 is a sectional view showing a fifth embodiment of the vertical vapor phase growth apparatus of the present invention. Claim 1 of the present invention
1 will be described. Further, FIG. 12 shows E in FIG.
FIG. 13 is an enlarged view of the region, and FIG. 13 is a view seen from the F direction in FIG. 11. In these figures, the present invention is shown in a simplified form for easier understanding. In this embodiment, it is possible to suppress the occurrence of defects such as slip lines, warp of the wafer, and cracking of the wafer due to the self-weight of the induction-heated body. 11 to 13, reference numeral 1 denotes a reaction tube installed in the reaction chamber, and the reaction tube 1 has a double-tube structure made of quartz glass, and has a water supply port 2 provided at the bottom and an upper part. The reaction tube 1 is cooled by flowing cooling water into the drainage port 3. The raw material gas supply port 4 and the carrier gas supply port 5 into the reaction tube 1 are provided in the lower part of the reaction tube 1, and the gas discharge port 6 from the reaction tube 1 is provided in the upper part.

Between the gas supply ports 4 and 5 and the gas discharge port 6 in the reaction tube 1, a carbon susceptor 7 serving as a main first induction-heated body is arranged. The carbon susceptor 7 is larger than the substrate 8 to be grown by 1 cm on one side, and is vertically inserted by a long carbon fixing screw 15 with respect to the susceptor supporting rod 14 which is inserted into the supporting rod 10 above and rotates together with the supporting rod 10. Has been fixed. That is, in this example, the carbon susceptor 7 is fixed to the susceptor support rod 14 by the carbon fixing screw 15. However, the carbon fixing screw 15 is long, and the lower portion of the susceptor support rod 14 has a diameter larger than that of the screw. There is a hole smaller than the head, so that the weight of the susceptor support rod 14 is not added to the carbon susceptor 7. Further, the carbon susceptor 7 is rotated by moving the susceptor support rod 14 up and down by a moving mechanism such as a motor (not shown).
It can move up and down independently of. And thickness 3
A disk-shaped (wafer-shaped) carbon wafer 20 having a thickness of 3 mm and a diameter of 70 mm, which is a second induction-heated body 1 cm larger on one side than the growth substrate 8 having a diameter of 50 μm and a diameter of 50 mm, was held by the support rod 10. The first substrate holding jig 9 holds only the peripheral portion.

The first substrate holding jig 9 is composed of a plurality of substrate holding claws 1 projecting at right angles to the axial direction of the rotating support rod 10.
2 and the carbon wafer 20 is held by the substrate holding claw 12. Further, the growth substrate 8 is held on the lower surface of the carbon wafer 20 with the main surface facing downward by a carbon plate 21a, which is a second substrate holding jig 21, and a screw 21b. Further, the first substrate holding jig 9 has a holding ring portion 26 provided on the upper portion of the main body and having an outer diameter larger than that of the main body, and the holding ring portion 26 receives the substrate holding jig of the support rod 10. It is adapted to be held by the support rod 10 by being engaged with the portion 25, and is detachable. Therefore, the first substrate holding jig 9 can be detached from the support rod 10, and the growth substrate 8 is a second induction heated body held by the second substrate holding jig 21 in a separate chamber and has a thickness of 3 mm. After the carbon wafer 20 is set on the first substrate holding jig 9, it is carried from the lateral direction of the reaction chamber into the reaction chamber containing the reaction tube 1 where the outside air does not directly enter and is held by the support rod 10.

In the above apparatus, the wafer set is usually carried out in a place separate from the reaction chamber, such as an N ₂ box, which is not in direct contact with the outside air. However, the porous carbon contains a small amount of oxygen in the atmosphere. It is easily adsorbed, which causes deterioration of the quality of the growth layer. Therefore, in this case, it is preferable to coat the surface of the carbon wafer 20 with a coating such as a SiC film for reducing the adhesion of impurities. Further, the carbon susceptor 7 is prevented from coming out of the reaction chamber including the reaction tube 1 so that a trace amount of oxygen or the like in the atmosphere is not adsorbed.
Then, the carbon susceptor 7 that can move vertically independently of the support rod 10 descends from the susceptor standby portion 13 to the lower inside of the substrate holding jig 9 by the moving mechanism such as a motor, and The carbon wafer 20 is directly stacked on the back surface of the carbon wafer 20, which is held only at the peripheral portion. With such a configuration, the positions of the growth substrate 8 with respect to the carbon susceptor 7 and the carbon wafer 20 can be aligned with good reproducibility. Also,
Since the substrate 8 to be grown is fixed by the carbon plate 21a, which is the second substrate holding jig 21, and the screw 21b, by tightly tightening it without being strongly tightened, the adhesion is good and the substrate is held uniformly. it can. Therefore, as in the third and fourth embodiments, the force applied to the substrate can be reduced and defects such as slip lines can be reduced. Further, in this case, if the positions of the holes for the second substrate holding jig 21 are appropriately provided, it is possible to use an amorphous wafer other than the circular wafer as in this embodiment. To be done.

In the vertical type vapor phase growth apparatus shown in FIGS. 11 to 13, the gas supplied from the source gas supply port 4 is blown to the main surface of the substrate 8 to be grown and goes to the gas discharge port 6. That is, the growth substrate 8 is arranged at right angles to the gas flow from the lower part to the upper part in the reaction tube 1. Then, the high-frequency heating coil 1 provided around the reaction tube 1
When the high frequency electric field is applied by 1, heat is generated in the carbon susceptor 7 and the carbon wafer 20 to heat the growth substrate 8, the decomposition of the source gas reaching the surface of the growth substrate 8 and the surface on the growth substrate 8 surface Crystals grow by the reaction.

In the vertical type vapor phase growth apparatus having such a structure, the flow direction of the gas from the gas supply ports 4 and 5 and the flow of the gas having buoyancy which is heated by the heat of the carbon susceptor 7 and the carbon wafer 20. Since the directions coincide with each other, the unnecessary gas that has not contributed to the growth hardly mixes with the raw material gas, the composition change due to the temperature rise of the growth gas is prevented, and a high quality crystal can be formed. Also, carbon wafer 2
Since the area of the bottom surface of 0 is made larger than that of the growth substrate 8, the flow velocity on the growth substrate 8 is almost equal, and the region where the flow velocity becomes faster moves to the edge portion of the carbon wafer 20,
Since the supplied source gases on the growth substrate 8 are almost equal in the plane, the growth rate at the edge portion of the growth substrate 8 does not increase, and the unevenness of the thickness of the growth layer around the wafer is not caused. Is improved, and a vapor phase growth layer having excellent uniformity within the wafer surface can be obtained. When the condition that the vicinity of the center is uniform is selected even if the ratio of the supply amount of the source gas to the supply amount of the carrier gas is changed or other parameters are changed, the swelling of the edge portion is selected. 8
If the size is the same, the circumference was about 1 cm, but
This can be improved by making the area of the bottom surface of the carbon wafer 20 larger than that of the growth substrate 8. For this reason, it is desirable that the carbon wafer 20 be larger than the substrate by 1 cm or more on each side.

Further, in the vertical vapor phase growth apparatus of this embodiment,
Since the temperature difference between the peripheral part and the central part of the growth substrate 8 due to the temperature distribution of the induction-heated body is reduced and the thermal distortion of the growth substrate is suppressed, the occurrence of defects such as slip lines due to this cause is suppressed. In addition, since the temperature distribution of the substrate to be grown is made uniform, the distribution of film characteristics due to the temperature distribution is also improved, and a more uniform and good quality crystal growth layer can be obtained. Further, since the growth substrate 8 is fixed by the carbon plate 21a which is the second substrate holding jig 21 and the screw 21b, the force applied to the growth substrate is the carbon wafer 20 and the carbon which are induction heated bodies. The force applied to the substrate to be grown can be reduced without being affected by the weight of the susceptor 7, defects such as slip lines and warpage of the wafer can be reduced, and a high-quality epitaxial growth layer can be obtained. In this case, the second substrate holding jig 21 need only be held by a structure in which the weight of the induction-heated body or the like is not applied to the growth substrate, and need not be a carbon plate and screws. Further, the carbon susceptor 7 is a carbon wafer 2.
The carbon wafer 20 may not be in contact with 0, and may be separated from each other as long as the carbon wafer 20 is sufficiently heated. In addition, the second substrate holding jig 21 is similar to the carbon wafer 20 in S
It is better to coat a film for reducing adsorption of gas such as iC.

In the above embodiments, the vertical vapor phase growth apparatus according to the present invention was described using the GaAs substrate. However, compound semiconductors other than the GaAs substrate and
It can also be effectively applied to vapor phase growth using a source gas that is easily decomposed by heat using a Group IV semiconductor substrate.

[0063]

As described above, according to the vertical vapor phase growth apparatus of the first aspect, the vertical reaction tube for introducing the reaction gas from the lower part and discharging it to the upper part, and the growth surface with the main surface facing downward. In a vertical vapor phase growth apparatus that has an object to be heated on the back surface of a substrate and performs crystal growth using a high frequency induction heating method, a substrate holding jig is provided in a separate chamber for transporting the substrate to be grown. A cylindrical shape into which an induction-heated body can be inserted so that the substrate to be grown can be held in a substrate holding jig and then moved to the reaction chamber and held in a substrate holding jig receiving portion provided on a support rod. Body, and a plurality of flat or cut portions that are provided in the lower part of the body and project at right angles to the axial direction of the rotating support rod and hold the peripheral portion of the growth substrate with the main surface facing downward. The board holding claw is engaged with the board holding jig receiving part of the support bar provided on the upper part of the main body. Since it has a holding ring part larger than the outer diameter of the main body and can be attached to and detached from the support rod, the substrate to be grown can be held in a separate chamber when the substrate is to be transferred. By holding it on the substrate holding claw that has the stepped part of the jig and then moving it to the reaction chamber and holding the holding ring part on the substrate holding jig receiving part provided on the support rod, The substrate can be transported with good reproducibility so that it does not move even on a sufficiently small substrate to be grown. When a substrate to be grown having a size about the same as the inner diameter of the main body is used, the substrate can be conveyed with good reproducibility so that even a flat substrate holding claw without a step does not move. As described above, according to the present invention, it is possible to provide a jig for transferring a substrate while increasing the positional accuracy regardless of the size of the wafer. In addition, polycrystal or the like is deposited on the downstream side of the growth substrate. In particular, although there are many parts near the induction-heated body, the substrate holding jig that can be attached and detached in that area can be exchanged and washed with aqua regia, etc., so that dirt inside the reaction chamber such as the induction-heated body can be reduced. The frequency of large-scale maintenance such as removing the reaction tube can be reduced. Further, since the contamination of the induction-heated body is reduced, the number of times of cleaning the induction-heated body is reduced, and the degassing step after cleaning can be reduced.

In the vertical vapor phase growth apparatus of claim 2, a vertical reaction tube installed in the reaction chamber for introducing the reaction gas from the lower part and discharging it to the upper part, and a support inserted in the reaction tube and rotating in the reaction tube. A rod, a substrate holding jig that holds a substrate to be grown with its main surface facing downward only at its peripheral portion and is held by the support rod above the back surface of the substrate to be grown, and the back surface of the substrate to be grown In a vertical vapor phase growth apparatus having an induction-heated body directly loaded on top and performing crystal growth using a high-frequency induction heating method, an area of a bottom surface of the induction-heated body is larger than that of the growth substrate. Also, the substrate holding jig has a plurality of substrate holding claws at right angles to the axial direction of the rotating support rod, and the upper surface of the substrate holding claws, that is, the surface of the substrate holding claw that contacts the growth substrate. Has a stepped portion that is shallower than the thickness of the substrate to be grown. Since the growth substrate has a structure that is retained in part, it can hold the wafer by increasing the positional accuracy at the time of wafer insertion regardless of the size of the wafer by the substrate holding claws having a stepped portion. In addition, since the area of the bottom surface of the induction-heated body is made larger than that of the growth substrate, the edge effect is reduced, the thickness unevenness of the vapor phase growth layer around the wafer can be improved, and the film thickness within the wafer surface can be improved. It is possible to obtain a vapor phase growth layer having excellent uniformity. Further, since the temperature difference between the peripheral portion and the central portion of the growth substrate due to the temperature distribution of the induction-heated body is reduced and the thermal distortion of the growth substrate is suppressed, the occurrence of defects such as slip lines due to this cause. It can be suppressed. Furthermore, since the temperature distribution in the plane of the wafer is made uniform, the distribution of the film characteristics caused by the temperature distribution is also improved, and a more uniform and good quality crystal growth layer can be obtained. This is effective even if the support rod and the substrate holding jig are integrated.

In the vertical vapor phase growth apparatus of the third aspect, a vertical reaction tube installed in the reaction chamber for introducing the reaction gas from the lower part and discharging it to the upper part, and a support inserted in the reaction tube and rotating in the reaction tube. A rod, a substrate holding jig which holds a substrate to be grown whose main surface faces downward only at its peripheral portion and is held by the support rod above the back surface of the substrate to be grown, and a back face of the substrate to be grown In a vertical vapor phase growth apparatus having an induction-heated body directly mounted on top and performing crystal growth using a high-frequency induction heating method, the area of the bottom surface of the induction-heated body is greater than that of the growth substrate. The substrate holding jig is so large that it can be held in the substrate holding jig receiving portion provided on the support rod after the substrate to be grown is held in the separate chamber and then moved to the reaction chamber. As a cylindrical body into which the induction-heated body can be inserted, A plurality of substrate holding claws provided on the lower part of the main body, which project at right angles to the axial direction of the rotating support rod and hold the peripheral part of the substrate to be grown with the main surface facing downward, and the support provided on the upper part of the main body. A first substrate holding jig that has a holding ring portion that is larger than the outer diameter of the main body engaged with the substrate holding jig receiving portion of the rod, and that is removable from the support rod; The same diameter as the induction-heated body, which is larger than the substrate to be grown and is slightly smaller than the inner diameter of the substrate holding jig, which is directly mounted on the back surface of the substrate to be grown with the main surface facing downward on the substrate holding jig of No. 1 Since the substrate holding jig is characterized by having an insulating plate, and the substrate to be grown is transported by the substrate holding jig, the substrate to be grown can be pressed by the weight of the insulating plate. When holding a substrate that is sufficiently smaller than the inner diameter of the 1st substrate holding jig Can also not necessary to provide the stepped portion on the substrate holding claw, to prevent movement of the growth substrate during substrate transfer. Therefore, regardless of the size of the wafer, the positional accuracy of the wafer can be increased and the substrate can be transferred. In addition, since the area of the bottom surface of the induction-heated body is made larger than that of the substrate to be grown, the edge effect is reduced, the thickness unevenness of the vapor phase growth layer in the peripheral area of the wafer can be improved, and the uniformity in the wafer surface can be improved. An excellent vapor phase growth layer can be obtained. Further, since the temperature difference between the peripheral portion and the central portion of the growth substrate due to the temperature distribution of the induction-heated body is reduced and the thermal distortion of the growth substrate is suppressed, the occurrence of defects such as slip lines due to this cause. Since the temperature distribution is suppressed and the temperature distribution in the wafer surface is made uniform, the distribution of the film characteristics caused by the temperature distribution is also improved, and a more uniform and good quality crystal growth layer can be obtained. As another effect, the deposition of polycrystals on the main surface and side surfaces of the carbon susceptor during crystal growth can be suppressed. In particular, the deposition of polycrystals on the main surface of the carbon susceptor causes a bad contact state between the carbon susceptor and the substrate to be grown and increases the temperature distribution as the number of times of growth increases, which adversely affects reproducibility and uniformity. Therefore, maintenance is required. Since this insulating plate is carried together with the first substrate holding jig when carrying the substrate, it can be replaced each time and washed with aqua regia together with the first substrate holding jig. It can reduce the amount of dirt in the room,
It is possible to reduce the frequency of large-scale maintenance such as cleaning the carbon susceptor by removing the reaction tube. Further, since the contamination of the induction-heated body is reduced, the number of times of cleaning the induction-heated body is reduced, and the degassing step after cleaning can be reduced.

In the vertical vapor phase growth apparatus of claim 4,
A susceptor support rod that is vertically movable independently of a support rod that holds a substrate holding jig to which a growth substrate is attached,
Since the structure has a susceptor standby portion located above the substrate holding jig held by the support rod, the substrate holding jig with the growth substrate whose main surface faces downward is attached in a separate chamber from the lateral direction. After moving to the reaction chamber and holding it by the support rod, the induction-heated body can be moved downward from the susceptor standby portion and placed on the back surface of the growth substrate, and the induction-heated body was left in the reaction chamber. Since the substrate can be transported as it is and degassing etc. becomes easy, a vertical type using a high frequency induction heating method with a structure in which a raw material gas is supplied from the bottom and unnecessary gas that did not contribute to growth is exhausted from the top Also in the vapor phase growth apparatus, when the growth substrate is set, there is an effect that contamination of the reaction chamber due to adsorption of oxygen or the like is reduced. Therefore, the quality deterioration of the growth layer can be prevented.

According to the vertical type vapor phase growth apparatus of claim 5, in the vertical type vapor phase growth apparatus of claim 4, with respect to the adhesion which still has a problem, the induction-heated body is on the back surface of the growth substrate. When loaded directly, it has a structure that has play in the vertical direction with respect to the susceptor support rod that rotates together with the support rod above the back surface of the growth substrate, and the induction-heated body moves slightly Therefore, even if the parallelism between the bottom surface of the induction-heated body and the back surface of the substrate to be grown is slightly deviated, the deviation can be absorbed and a part of the substrate is not pressed too hard. A force is evenly applied to the holding claws, and the adhesion between the induction-heated body, the substrate to be grown, and the substrate holding claws is improved. Moreover, since the substrate can be held uniformly with good reproducibility, the effect of forming a film with good reproducibility is added.

Further, in the vertical vapor phase growth apparatus according to the sixth aspect of the present invention, the induction-heated body is held and fixed to the susceptor support rod which rotates together with the support rod above the rear surface of the substrate to be grown. And a first induction-heated body that is lighter than the first induction-heated body and does not contact the first induction-heated body between the first induction-heated body and the growth substrate. Since it is divided into a second induction-heated body directly mounted on the back surface of the, the force applied to the growth substrate by the weight of the induction-heated body is reduced, and the stress applied to the growth substrate is reduced. Therefore, defects such as slip lines and warp of the wafer can be reduced. Therefore, a good quality epitaxial growth layer can be obtained. Further, the first induction-heated body is always in the reaction chamber, and the second induction-heated body conveyed together with the substrate is thin, so cleaning is easy and adsorbed impurity gas can be easily degassed, so that oxygen or the like Contamination of the reaction chamber due to the adsorption of R.

Further, in the vertical vapor phase growth apparatus of claim 7,
The vertical vapor phase growth apparatus according to claim 6, wherein the area of the bottom surface of the second induction-heated body is larger than that of the substrate to be grown, and the plurality of substrate holding jigs are perpendicular to the axial direction of the rotating support rod. Of the substrate holding claw, the upper surface of the substrate holding claw, that is, the surface in contact with the substrate to be grown is formed with a step portion shallower than the thickness of the substrate to be grown, Since it has a structure to be held, the wafer can be held by the substrate holding claw having the step portion with high positional accuracy at the time of inserting the wafer regardless of the size of the wafer. Further, by reducing the force applied to the growth substrate by the weight of the induction-heated body, defects such as slip lines and wafer warp are reduced. In addition, since the area of the bottom surface of the induction-heated body is made larger than that of the growth substrate, the edge effect is reduced and unevenness in the thickness of the vapor phase growth layer around the wafer can be improved. Can be better. Furthermore, since the temperature difference between the peripheral portion and the central portion of the growth substrate due to the temperature distribution of the induction-heated body is reduced and the thermal strain of the growth substrate is suppressed, the occurrence of defects such as slip lines due to this cause. It can be suppressed. In addition, the uniformity of the temperature distribution within the wafer surface is also improved, so that the distribution of the film characteristics caused by the temperature distribution can also be improved. As a result, it is possible to obtain a high-quality epitaxial growth layer having excellent uniformity within the wafer surface.

Further, in the vertical vapor phase growth apparatus of claim 8,
The vertical vapor deposition apparatus according to claim 6, wherein the second induction-heated body is held by a susceptor support rod that rotates together with the support rod above the back surface of the growth substrate. Since the structure is held with play in the vertical direction with respect to the heating body, defects such as slip lines and warpage of the wafer are reduced by reducing the force applied to the growth substrate by the weight of the induction heating body by itself. Since it is not necessary to take the second induction-heated body out of the reaction chamber, and degassing and the like are facilitated, carry-in of impurities into the reaction chamber due to adsorption of oxygen and the like during transfer of the growth substrate is further reduced. Is effective.
Therefore, contamination can be further reduced and deterioration of the quality of the grown layer can be prevented.

According to a ninth aspect of the vertical vapor phase growth apparatus, in the vertical type vapor phase growth apparatus according to the eighth aspect, the substrate is held between the second induction-heated body and the growth substrate by a larger amount than the growth substrate. Since the insulating plate having the same diameter as the second induction-heated body, which is slightly smaller than the inner diameter of the jig, is inserted, the substrate to be grown is placed on the substrate holding claw of the substrate holding jig and the insulating plate is placed thereon. Since it is mounted, the substrate to be grown can be pressed by the weight of the insulating plate, and even when holding a substrate that is sufficiently smaller than the inner diameter of the substrate holding jig, it is not necessary to provide a step on the substrate holding claw, and the substrate can be transported. It is possible to prevent the growth substrate from moving. As described above, according to the present invention, it is possible to transfer the substrate with high wafer position accuracy regardless of the size of the wafer. In addition, since the area of the bottom surface of the induction-heated body is made larger than that of the growth substrate, the edge effect is reduced, the thickness unevenness of the vapor phase growth layer around the wafer can be improved, and the film thickness within the wafer surface can be improved. It is possible to obtain a vapor phase growth layer having excellent uniformity. Further, since the temperature difference between the peripheral portion and the central portion of the growth substrate due to the temperature distribution of the second induction-heated body is reduced and the thermal distortion of the growth substrate is suppressed, defects such as slip lines due to this cause are caused. Can be suppressed. Further, since the temperature distribution in the wafer surface is made uniform, the distribution of the film characteristics caused by the temperature distribution is also improved, and a more uniform and high quality crystal growth layer can be obtained. In addition, the effect of suppressing the deposition of polycrystal on the carbon wafer during crystal growth can be obtained. Since this insulating plate is transferred together with the substrate holding jig during the transfer of the substrate, it can be replaced and cleaned each time, so that the frequency of large-scale maintenance such as removing the reaction tube and cleaning the carbon susceptor can be reduced.

According to a tenth aspect of the vertical vapor phase growth apparatus, in the vertical type vapor phase growth apparatus according to the sixth aspect, the substrate holding jig to which the substrate to be grown and the second induction heated body are attached is held. It has a structure that has a susceptor support rod that can move up and down independently of the support rod, and a susceptor standby part above the substrate holding jig held by the support rod, so that the main surface faces downward in a separate room. The substrate to be grown and the substrate holding jig on which the second object to be heated are mounted are laterally moved to the reaction chamber and held by the supporting rod, and the second object to be heated is grown on the substrate to be grown. Move the induction-heated body downward from the susceptor standby part to a position separated by a few mm on the back surface of the substrate, that is, a position where the weight of the induction-heated body is not transmitted to the growth substrate and induction heating is possible, and move that position. Can be controlled. Further, the substrate can be transported while leaving the induction-heated body left in the reaction chamber, and when the growth substrate is set, contamination of the reaction chamber due to adsorption of oxygen and the like can be reduced and deterioration of the quality of the growth layer can be prevented. The effect that can be added is added.

In the vertical type vapor phase growth apparatus according to the eleventh aspect of the present invention, the induction heated body is held by the main susceptor supporting rod which rotates together with the supporting rod above the back surface of the substrate to be grown. The second object to be heated is divided into the second object to be heated and the second object to be heated which is lighter than the first object to be heated directly on the back surface of the substrate to be grown and larger than the first substrate to be grown. The induction heating body is held by a first substrate holding jig held by a rotating support rod above the back surface of the growth substrate, and the growth substrate is held by a second substrate holding separate from the substrate holding jig. Since the structure is held by the jig on the second induction-heated body, the force applied to the growth substrate is not due to the heavy weight of the induction-heated body, but the second substrate-holding jig is used. The force that is applied to the induction-heated body when it is held is the main, and it is possible to perform The force applied to the substrate is reduced, since it is possible to reduce the stress applied to the growth substrate, defects such as slip lines, warpage of the wafer is reduced. In addition, since the area of the bottom surface of the second induction-heated body is made larger than that of the growth substrate, the edge effect is reduced, unevenness of the vapor phase growth layer around the wafer can be improved, and the film thickness can be reduced. Improves uniformity. Furthermore, since the temperature difference between the peripheral portion and the central portion of the growth substrate due to the temperature distribution of the induction-heated body is reduced and the thermal strain of the growth substrate is suppressed, the occurrence of defects such as slip lines due to this cause. It can be suppressed. Further, since the temperature distribution in the wafer surface is made uniform, the distribution of the film characteristics caused by the temperature distribution is also improved. As described above, with the apparatus of the present invention, it is possible to obtain a high-quality epitaxial growth layer having excellent uniformity within the wafer surface. Furthermore, by providing an appropriate position for attaching the second substrate holding jig, it is possible to use an amorphous wafer. In addition, the wafer can be held with high positional accuracy regardless of the size and shape of the wafer.

As described above, according to the present invention, the vertical reaction tube which introduces the reaction gas from the lower part and discharges it to the upper part, and the growth substrate which is held only in the peripheral part with the main surface facing downward, In a vertical vapor phase growth apparatus having an induction heated body for heating a growth substrate and using a high frequency induction heating method, the substrate is conveyed while increasing the position accuracy regardless of the size of the wafer, To reduce the introduction of impurities into the reaction chamber,
Improving film thickness uniformity, reducing defects such as slip lines due to thermal strain, and reducing wafer warpage, defects such as slip lines due to the weight of the induction-heated body It has become possible to reduce the occurrence of warpage, cracking of the wafer, etc., and to obtain a high-quality epitaxial growth layer with excellent uniformity.

[Brief description of drawings]

FIG. 1 is a sectional view of an essential part of a vertical vapor phase growth apparatus showing a first embodiment of the present invention.

FIG. 2 is an enlarged view of a region A of the vertical vapor deposition apparatus shown in FIG.

FIG. 3 shows the substrate holding part of the vertical vapor deposition apparatus shown in FIG.
It is a top view when it sees from a direction.

FIG. 4 is a diagram showing an example of a film thickness distribution when a conventional device is used.

FIG. 5 is a diagram showing an example of film thickness distribution when the apparatus of the present invention is used.

FIG. 6 is a sectional view of a substrate holding part of a vertical vapor phase growth apparatus showing a second embodiment of the present invention.

FIG. 7 is a cross-sectional view of essential parts of a vertical vapor phase growth apparatus showing a third embodiment of the present invention.

8 is an enlarged view of a C region portion of the vertical vapor phase growth apparatus shown in FIG.

FIG. 9 shows a substrate holding part of the vertical vapor deposition apparatus shown in FIG.
It is a top view when it sees from a direction.

FIG. 10 is a cross-sectional view of a substrate holding portion of a vertical vapor phase growth apparatus showing a fourth embodiment of the present invention.

FIG. 11 is a cross-sectional view of essential parts of a vertical vapor phase growth apparatus showing a fifth embodiment of the present invention.

12 is an enlarged view of an E region portion of the vertical vapor phase growth apparatus shown in FIG.

FIG. 13 is a plan view of the substrate holding unit of the vertical vapor deposition apparatus shown in FIG. 11 when viewed from the F direction.

FIG. 14 is a cross-sectional view of essential parts of a vertical vapor phase growth apparatus showing a first conventional example.

FIG. 15 is a cross-sectional view of a main part of a vertical vapor phase growth apparatus showing a second conventional example.

FIG. 16 is a cross-sectional view of essential parts of a vertical vapor phase growth apparatus showing a third conventional example.

FIG. 17 is a perspective view of a substrate holding part of the vertical vapor phase growth apparatus shown in FIG.

[Explanation of symbols]

 1: Reaction tube 2: Water supply port 3: Drainage port 4: Raw material gas supply port 5: Carrier gas supply port 6: Gas exhaust port 7: Carbon susceptor (induction heated body) 8: Growth substrate 9: Substrate holding jig (First substrate holding jig) 9a: Main body of substrate holding jig 10: Support rod 11: High frequency heating coil 12: Substrate holding claw 13: Susceptor standby portion 14: Susceptor support rod 15: Carbon fixing screw 16: Step portion 20: Carbon wafer (second induction heated body) 21: Second substrate holding jig 22: Gap 23: Second carbon fixing screw 24: Insulating plate 25: Substrate holding jig receiving portion 26: Holding ring Department

Claims (11)

[Claims] 1. A vertical reaction tube which is installed in a reaction chamber and which introduces a reaction gas from a lower part and discharges it to an upper part, and is loaded on a rear surface of a substrate to be grown whose main surface faces downward in the reaction tube. In a vertical vapor phase growth apparatus having an induction heated body and performing crystal growth using a high frequency induction heating method, a support rod that is inserted into the reaction tube and rotates in the reaction tube,
A substrate holding jig which is held by the support rod and holds the growth substrate with its main surface facing downward; and when the growth substrate is transported, the growth substrate is held in a separate chamber after being held by the substrate holding jig. The substrate holding jig is used so that it can be moved to the reaction chamber and held in the substrate holding jig receiving portion provided on the support rod. The substrate holding jig is a cylindrical shape into which the induction-heated body can be inserted. Body, and a plurality of flat or cut portions that are provided in the lower part of the body and project at right angles to the axial direction of the rotating support rod and hold the peripheral portion of the growth substrate with the main surface facing downward. It has a substrate holding claw and a holding ring portion that is provided on the upper part of the main body and is larger than the outer diameter of the main body that engages with the substrate holding jig receiving portion of the support rod, A vertical vapor phase growth apparatus characterized by being present. 2. A vertical reaction tube installed in a reaction chamber for introducing a reaction gas from a lower part and discharging it to an upper part, a support rod inserted in the reaction tube and rotating in the reaction tube, and a main surface thereof directed downward. A substrate holding jig that holds the substrate to be grown only at its peripheral portion and is held by the support rod located above the back surface of the substrate to be grown, and induction heating directly loaded on the back surface of the substrate to be grown. In a vertical vapor deposition apparatus having a body and performing crystal growth using a high frequency induction heating method, an area of a bottom surface of the induction heated body is larger than that of the growth substrate, and the substrate holding jig is , Having a plurality of substrate holding claws at right angles to the axial direction of the rotating support rod, and the upper surface of the substrate holding claws, that is, the surface in contact with the growth substrate, has a step portion shallower than the thickness of the growth substrate. Is formed and the stepped portion holds the growth substrate. A vertical vapor phase growth apparatus characterized in that 3. A vertical reaction tube installed in a reaction chamber for introducing a reaction gas from a lower part and discharging it to an upper part, a supporting rod inserted into the reaction tube and rotating in the reaction tube, and a main surface thereof directed downward. A substrate holding jig that holds the growth substrate only at its peripheral portion and is held by the supporting rod located above the back surface of the growth substrate, and induction heating directly loaded on the back surface of the growth substrate. A vertical vapor deposition apparatus having a body and performing crystal growth using a high frequency induction heating method, wherein an area of a bottom surface of the induction-heated body is larger than that of the growth substrate, and the growth is performed in a separate room. The induction-heated body must be inserted as the substrate holding jig so that the substrate can be moved to the reaction chamber after being held by the substrate holding jig and then held by the substrate holding jig receiving portion provided on the support rod. And a cylindrical main body that can be rotated, and the rotating unit provided below the main body. A plurality of substrate holding claws projecting at right angles to the axial direction of the supporting rod and holding the peripheral portion of the substrate to be grown with the main surface facing downward; A first substrate holding jig that has a holding ring portion that is larger than the outer diameter of the main body to be engaged with and is removable from the support rod; It has an insulating plate of the same diameter as the induction-heated body larger than the growth substrate directly mounted on the back surface of the growth substrate and slightly smaller than the inner diameter of the substrate holding jig. A vertical type vapor phase growth apparatus characterized in that a substrate holding jig is used and a substrate to be grown is conveyed by the substrate holding jig. 4. A vertical reaction tube installed in a reaction chamber for introducing a reaction gas from a lower part and discharging it to an upper part, a support rod inserted into the reaction tube and rotating in the reaction tube, and a main surface thereof directed downward. A substrate holding jig that holds the growth substrate only at its peripheral portion and is held by the supporting rod located above the back surface of the growth substrate, and induction heating directly loaded on the back surface of the growth substrate. In a vertical vapor phase growth apparatus that has a body and performs crystal growth using a high-frequency induction heating method, the induction-heated body always contains a reaction tube and the reaction chamber does not directly enter the outside air even when the growth substrate is set In a separate chamber, the substrate holding jig to which the growth substrate is attached moves laterally to the reaction chamber and is held by the support rod, and the induction-heated body moves downward from the susceptor standby part on the back surface of the growth substrate The substrate to be grown so that With a structure that has a susceptor support rod that is vertically movable independently of the support rod that holds the attached substrate holding jig, and a susceptor standby portion that is located above the substrate holding jig that is held by the support rod. A vertical vapor phase growth apparatus characterized by being present. 5. The induction-heated body, when loaded on the back surface of the substrate to be grown, is vertically movable with respect to the susceptor support rod rotating together with the support rod above the back surface of the substrate to be grown. The vertical vapor phase growth apparatus according to claim 4, which has a structure having. 6. A vertical reaction tube installed in a reaction chamber for introducing a reaction gas from a lower part and discharging it to an upper part, a support rod inserted in the reaction tube and rotating in the reaction tube, and a main surface thereof directed downward. A substrate holding jig that holds the substrate to be grown only at its peripheral portion and is held by the support rod located above the back surface of the substrate to be grown, and induction heating directly loaded on the back surface of the substrate to be grown. A vertical vapor deposition apparatus for growing crystals using a high frequency induction heating method, wherein the induction heated body is a susceptor support that rotates together with a support rod above the back surface of the growth substrate. A first first induction-heated body held by a rod, and a first induction-heated body which is lighter than the first induction-heated body between the first induction-heated body and the growth substrate. Separated into a second induction-heated body directly mounted on the back surface of the substrate to be grown without contact. The vertical vapor phase growth apparatus characterized in that 7. The second induction-heated body is larger than the substrate to be grown, and the substrate-holding jig has a plurality of substrate-holding claws at right angles to the axial direction of the rotating support rod. A step portion, which is shallower than the thickness of the growth substrate, is formed on the upper surface of the substrate holding claw, that is, the surface which is in contact with the growth substrate, and the growth substrate is held on the step portion. The vertical vapor phase growth apparatus according to claim 6. 8. The second induction-heated body is vertically arranged with respect to the first induction-heated body held by a susceptor support rod that rotates together with a support rod above the rear surface of the growth substrate. 8. The vertical vapor phase growth apparatus according to claim 6, wherein the vertical vapor phase growth apparatus has a structure in which it is held with play. 9. The second induction-heated body is larger than the growth target substrate, and is larger than the growth target substrate between the second induction heating target body and the growth target substrate and larger than the inner diameter of the substrate holding jig. 9. The vertical vapor phase growth apparatus according to claim 8, wherein an insulating plate having a diameter substantially the same as that of the second induction-heated body, which is slightly smaller, is inserted. 10. The vertical vapor phase growth apparatus according to claim 6, wherein the first induction-heated body is always in the reaction chamber including the reaction tube, which does not directly enter the outside air even when the growth substrate is set. In a vertical vapor phase growth apparatus having a structure in which a substrate holding jig to which a substrate to be grown and a second induction-heated body are attached in a separate chamber is moved laterally to a reaction chamber and held by a support rod, In order to move the first induction-heated body downward from the susceptor standby portion to a position on the induction heating body that is not in contact with the induction heating body, the susceptor support rod that is vertically movable independently of the rotating support rod and the support rod are provided. A vertical vapor phase growth apparatus having a structure having a susceptor standby portion above a held substrate holding jig. 11. A vertical reaction tube which is installed in a reaction chamber and which introduces a reaction gas from a lower part and discharges it to an upper part, and a direct contact with a rear surface of a substrate to be grown whose main surface faces downward in the reaction tube. In the vertical vapor phase growth apparatus for performing crystal growth using a high frequency induction heating method, the induction-heated body together with a support rod above the back surface of the growth substrate. The main first induction-heated body held by the susceptor support rod rotating in the direction of and the first induction-heated body directly contacting the back surface of the growth substrate are lighter than the growth-target substrate. And a second induction-heated body, which is larger than the second induction-heated body, and the second induction-heated body is held by a first substrate holding jig held by a rotating support rod above the back surface of the growth substrate. And the substrate to be grown is a second substrate different from the first substrate holding jig. A vertical vapor deposition apparatus having a structure in which it is held by a second induction-heated body by a plate holding jig.