JP2015082634A - Epitaxial growth apparatus - Google Patents
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- JP2015082634A JP2015082634A JP2013221219A JP2013221219A JP2015082634A JP 2015082634 A JP2015082634 A JP 2015082634A JP 2013221219 A JP2013221219 A JP 2013221219A JP 2013221219 A JP2013221219 A JP 2013221219A JP 2015082634 A JP2015082634 A JP 2015082634A
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- 239000000758 substrate Substances 0.000 claims abstract description 60
- 239000006096 absorbing agent Substances 0.000 claims abstract description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 49
- 229910052710 silicon Inorganic materials 0.000 claims description 49
- 239000010703 silicon Substances 0.000 claims description 49
- 239000013078 crystal Substances 0.000 claims description 42
- 239000010453 quartz Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 10
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 10
- 230000003746 surface roughness Effects 0.000 claims description 5
- 238000002834 transmittance Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 3
- 235000012431 wafers Nutrition 0.000 description 45
- 238000009826 distribution Methods 0.000 description 25
- 230000000052 comparative effect Effects 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- DEXFNLNNUZKHNO-UHFFFAOYSA-N 6-[3-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperidin-1-yl]-3-oxopropyl]-3H-1,3-benzoxazol-2-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1CCN(CC1)C(CCC1=CC2=C(NC(O2)=O)C=C1)=O DEXFNLNNUZKHNO-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- Chemical Vapour Deposition (AREA)
Abstract
Description
本発明は、シリコン単結晶基板の主表面にエピタキシャル層を成長させるエピタキシャル成長装置に関する。 The present invention relates to an epitaxial growth apparatus for growing an epitaxial layer on a main surface of a silicon single crystal substrate.
気相成長法により、シリコン単結晶基板の表面にエピタキシャル層を形成したシリコンエピタキシャルウェーハは電子デバイスに広く使用されている。近年、電子デバイスの微細化によって、エピタキシャル膜厚の面内均一化が重要な課題の一つとなっている。 A silicon epitaxial wafer in which an epitaxial layer is formed on the surface of a silicon single crystal substrate by a vapor deposition method is widely used for electronic devices. In recent years, with the miniaturization of electronic devices, in-plane uniformity of the epitaxial film thickness has become one of the important issues.
エピタキシャル層の成長速度は温度の影響を強く受けるので、エピタキシャル層の膜厚均一性を向上させる為には、シリコン単結晶基板の面内の温度分布の制御が重要である。エピタキシャルウェーハ製造装置の加熱方式には様々なものがあり、シリコンウェーハを１枚ずつエピタキシャル成長させる枚葉エピタキシャル装置の場合は、シリコンウェーハの上下からハロゲンランプヒータで加熱する方式が多く使われる。ハロゲンランプに片口金型ランプを用いる場合はランプを円形に配列することになり、このランプの背後にはヒータからの熱線を反射して基板に照射するためのドーナツ状のリフレクタを配置する。また他に、サセプタの支持軸の保護や温度計測のための光路確保のために、サセプタに載置された基板の上下で、ドーナツ状のリフレクタの中心を通る円筒形状のリフレクタも配置される。 Since the growth rate of the epitaxial layer is strongly influenced by temperature, it is important to control the temperature distribution in the plane of the silicon single crystal substrate in order to improve the film thickness uniformity of the epitaxial layer. There are various heating methods for an epitaxial wafer manufacturing apparatus. In the case of a single wafer epitaxial apparatus in which silicon wafers are epitaxially grown one by one, a method of heating with a halogen lamp heater from above and below the silicon wafer is often used. When a single-end die lamp is used as the halogen lamp, the lamps are arranged in a circular shape, and a donut-shaped reflector for reflecting the heat rays from the heater and irradiating the substrate is disposed behind the lamp. In addition, in order to protect the support shaft of the susceptor and to secure an optical path for temperature measurement, cylindrical reflectors passing through the center of the donut-shaped reflector are also arranged above and below the substrate placed on the susceptor.
ヒータの背後に設置されるドーナツ状のリフレクタ形状の違いにより、基板の中心付近を強く照射するインサイド用ランプと、基板の周辺付近を強く照射するアウトサイド用ランプがあり、この両方のランプの照射強度を調整することにより、基板面内の温度分布の均一化を図っているが、基板中心付近の照度は急激に増大しやすく、インサイド／アウトサイド用ランプの照度を調整しても、急激に変動した照度分布が残ってしまう問題があった。これにより、基板面内の温度分布が不均一となり、エピタキシャル層の膜厚が不均一になってしまうという問題があった。 Depending on the shape of the donut-shaped reflector installed behind the heater, there are an inside lamp that irradiates the vicinity of the substrate strongly and an outside lamp that irradiates the vicinity of the substrate strongly. By adjusting the intensity, the temperature distribution in the substrate surface is made uniform, but the illuminance near the center of the substrate tends to increase rapidly, and even if the illuminance of the inside / outside lamp is adjusted, There was a problem that the changed illuminance distribution remained. As a result, there is a problem that the temperature distribution in the substrate surface becomes non-uniform and the film thickness of the epitaxial layer becomes non-uniform.
特許文献１や特許文献２では、ドーナツ状リフレクタの曲率半径の変更や、ランプ中心側に散乱体を有する構造にすることで、急激な照度分布を抑制し、温度分布を改善している。 In Patent Document 1 and Patent Document 2, a rapid illuminance distribution is suppressed and a temperature distribution is improved by changing the radius of curvature of the donut-shaped reflector or by using a structure having a scatterer on the lamp center side.
本発明は、上記した従来技術の問題点に鑑みなされたものであり、エピタキシャル成長において、ヒータからの熱線を調節して、シリコン単結晶基板を面内均一に加熱し、膜厚が均一なエピタキシャル層を成長させることができるエピタキシャル成長装置を提供することを目的とする。 The present invention has been made in view of the above-described problems of the prior art, and in epitaxial growth, a heat ray from a heater is adjusted to uniformly heat a silicon single crystal substrate in a plane, thereby obtaining an epitaxial layer having a uniform film thickness. It is an object of the present invention to provide an epitaxial growth apparatus capable of growing the substrate.
上記課題を解決するために、本発明のエピタキシャル成長装置は、サセプタに略水平に載置されたシリコン単結晶基板の主表面にエピタキシャル層を成長させるエピタキシャル成長装置であって、前記サセプタの上下に各々配置され、放射状に円形に並べられた複数の棒状の単体ヒータを有するヒータと、前記上のヒータの上側及び前記下のヒータの下側に各々配置された上下のドーナツ状リフレクタとを備えるエピタキシャル成長装置において、前記シリコン単結晶基板又は前記サセプタの近傍に前記ヒータからの熱線を散乱する散乱体及び／又は前記ヒータからの熱線を吸収する吸収体を有し、前記散乱体及び／又は前記吸収体が略円形状に設けられてなり、前記散乱体及び／又は前記吸収体の直径が、前記シリコン単結晶基板の直径の５〜５０％の範囲にあることを特徴とする。 In order to solve the above problems, an epitaxial growth apparatus of the present invention is an epitaxial growth apparatus for growing an epitaxial layer on a main surface of a silicon single crystal substrate placed substantially horizontally on a susceptor, and is disposed above and below the susceptor. An epitaxial growth apparatus comprising: a heater having a plurality of rod-shaped single heaters arranged radially in a circle; and upper and lower donut-shaped reflectors respectively disposed above the upper heater and below the lower heater A scatterer that scatters heat rays from the heater and / or an absorber that absorbs heat rays from the heater in the vicinity of the silicon single crystal substrate or the susceptor, and the scatterer and / or the absorber is substantially The diameter of the scatterer and / or the absorber is the same as the diameter of the silicon single crystal substrate. Characterized in that in the range of 50%.
散乱体及び／又は吸収体をシリコン単結晶基板或いはサセプタの上方、又はサセプタの下方に、略円形状に設置することで、シリコン単結晶基板の局所的な部分の温度を低下させることが出来、また、散乱体又は吸収体の位置、散乱量を変更することにより温度の低下部分と低下量をコントロールすることが可能である。 By installing the scatterer and / or absorber in a substantially circular shape above the silicon single crystal substrate or susceptor or below the susceptor, the temperature of the local portion of the silicon single crystal substrate can be lowered, Moreover, it is possible to control the temperature-decreasing portion and the amount of decrease by changing the position of the scatterer or absorber and the amount of scattering.
また、前記散乱体及び／又は前記吸収体を略円形状に設けるにあたっては、略円形状の散乱体及び／又は吸収体を使用してもよいし、非円形状の散乱体及び／又は吸収体を並べて集合体として略円形状としたものを使用してもよい。また、略円形状であればリング状でもよく、その場合、前記散乱体及び／又は前記吸収体の直径は、リング状の外径をその直径とする。 In providing the scatterer and / or the absorber in a substantially circular shape, a substantially circular scatterer and / or absorber may be used, or a non-circular scatterer and / or absorber. You may use what was made into the substantially circular shape as an aggregate | assembly by arranging. Moreover, if it is substantially circular shape, a ring shape may be sufficient, and the diameter of the said scatterer and / or the said absorber makes a ring-shaped outer diameter the diameter.
前記散乱体及び／又は前記吸収体の位置がシリコン単結晶基板面の上方で、前記シリコン単結晶基板の表面からの距離が前記シリコン単結晶基板の直径の２０％未満の範囲にあるのが好適である。すなわち、前記散乱体及び／又は前記吸収体の位置がシリコン単結晶基板面の上方且つ前記シリコン単結晶基板の直径の２０％未満の距離に設けられるのが好適である。 Preferably, the position of the scatterer and / or the absorber is above the surface of the silicon single crystal substrate, and the distance from the surface of the silicon single crystal substrate is in a range of less than 20% of the diameter of the silicon single crystal substrate. It is. That is, the position of the scatterer and / or the absorber is preferably provided above the silicon single crystal substrate surface and at a distance of less than 20% of the diameter of the silicon single crystal substrate.
前記散乱体及び／又は前記吸収体の位置がサセプタの下方で、前記サセプタの下面からの距離が前記シリコン単結晶基板の直径の２０％未満の範囲にあるのが好適である。すなわち、前記散乱体及び／又は前記吸収体の位置がシリコン単結晶基板面の下方且つ前記シリコン単結晶基板の直径の２０％未満の距離に設けられるのが好適である。 It is preferable that the position of the scatterer and / or the absorber is below the susceptor and the distance from the lower surface of the susceptor is within a range of less than 20% of the diameter of the silicon single crystal substrate. That is, the position of the scatterer and / or the absorber is preferably provided below the silicon single crystal substrate surface and at a distance of less than 20% of the diameter of the silicon single crystal substrate.
前記散乱体が、反射体であるのが好ましい。 The scatterer is preferably a reflector.
前記反射体が、金メッキ製であるのが好ましい。 The reflector is preferably made of gold plating.
前記散乱体及び／又は前記吸収体が、細線形状であるのが好ましい。 It is preferable that the scatterer and / or the absorber has a thin line shape.
前記散乱体及び／又は前記吸収体が、炭化珪素製又は炭化珪素で被覆されたものであるのが好ましい。例えば、前記炭化珪素で被覆されたものとしては、炭素製基材を炭化珪素で被覆したものが適用できる。 The scatterer and / or the absorber is preferably made of silicon carbide or coated with silicon carbide. For example, as what was coat | covered with the said silicon carbide, what coat | covered the carbon base material with silicon carbide is applicable.
前記散乱体及び／又は前記吸収体が、石英製であるのが好ましい。 The scatterer and / or the absorber is preferably made of quartz.
前記散乱体が、石英製散乱体であり、その表面粗さがＲａ０．０１〜１０μｍであるのが好適である。 It is preferable that the scatterer is a quartz scatterer and the surface roughness is Ra 0.01 to 10 μm.
前記石英製散乱体が、高さ０．１〜１０ｍｍの凹凸表面を有する形状であるのが好適である。また、前記石英製散乱体が、波長１５５０ｎｍにおける透過率で２５％を超えるのが好ましい。 The quartz scatterer preferably has a shape having an uneven surface with a height of 0.1 to 10 mm. The quartz scatterer preferably has a transmittance of more than 25% at a wavelength of 1550 nm.
本発明によれば、エピタキシャル成長において、ヒータからの熱線を調節して、シリコン単結晶基板を面内均一に加熱し、膜厚が均一なエピタキシャル層を成長させることができるエピタキシャル成長装置を提供することができるという著大な効果を奏する。 According to the present invention, it is possible to provide an epitaxial growth apparatus capable of growing an epitaxial layer having a uniform film thickness by epitaxially growing a silicon single crystal substrate in a plane by adjusting heat rays from a heater. There is a great effect that you can.
以下、本発明の実施形態を図面を参照しながら説明するが、本発明はこれに限定されるものではない。 Hereinafter, embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited thereto.
図１に、本発明に係るエピタキシャル成長装置の一つの実施の形態を示す。本発明のエピタキシャル成長装置１０Ａは、反応ガスを基板Ｗに対して略水平に導入して、基板Ｗ上に薄膜を気相成長させるための反応室１１と、反応室１１内にシリコン単結晶基板Ｗを略水平に配置するためのサセプタ１２と、前記サセプタ１２の上下に各々配置され、シリコン単結晶基板Ｗを加熱するための放射状に円形に並べられた複数の棒状の単体ヒータを有するヒータ１５ａ，１５ｂと、前記上のヒータ１５ａの中央に配置された円筒状リフレクタ１４ａ及び前記下のヒータ１５ｂの中央に配置された円筒状リフレクタ１４ｂと、を備える。前記円筒状リフレクタ１４ａ，１４ｂにより、支持軸１３の加熱防止や、温度計測のための光路を確保することができる。 FIG. 1 shows an embodiment of an epitaxial growth apparatus according to the present invention. The epitaxial growth apparatus 10A of the present invention introduces a reaction gas substantially horizontally with respect to the substrate W, and causes a thin film on the substrate W to vapor-phase grow, and the silicon single crystal substrate W in the reaction chamber 11. , And a heater 15a having a plurality of rod-shaped single heaters arranged respectively in the upper and lower sides of the susceptor 12 and arranged radially in a circle for heating the silicon single crystal substrate W. 15b, and a cylindrical reflector 14a disposed at the center of the upper heater 15a and a cylindrical reflector 14b disposed at the center of the lower heater 15b. The cylindrical reflectors 14a and 14b can secure an optical path for preventing the support shaft 13 from being heated and for measuring temperature.
サセプタ１２は、該サセプタ１２を回転させる機構を設けた支持軸１３により支持されている。前記支持軸１３はサセプタ１２の周縁部を支持する複数のアーム部２４ａ，２４ｂを有している。また、上のヒータ１５ａの上側及び下のヒータ１５ｂの下側には、上下のドーナツ状リフレクタ１６ａ、１６ｂが各々配置される。 The susceptor 12 is supported by a support shaft 13 provided with a mechanism for rotating the susceptor 12. The support shaft 13 has a plurality of arm portions 24 a and 24 b that support the peripheral portion of the susceptor 12. In addition, upper and lower donut-shaped reflectors 16a and 16b are respectively arranged on the upper side of the upper heater 15a and the lower side of the lower heater 15b.
前記円筒状リフレクタ１４ａ，１４ｂ、ドーナツ状リフレクタ１６ａ，１６ｂ及びヒータ１５ａ，１５ｂの構成については、特許文献１及び特許文献２に開示された円筒状リフレクタ、ドーナツ状リフレクタ及びヒータと同様の構成を採用することができる。 The configurations of the cylindrical reflectors 14a and 14b, the donut-shaped reflectors 16a and 16b, and the heaters 15a and 15b are the same as the cylindrical reflector, the donut-shaped reflector and the heater disclosed in Patent Document 1 and Patent Document 2. can do.
すなわち、上下のヒータ１５ａ、１５ｂは、放射状に円形に並べられた複数の棒状の単体ヒータを有する。この単体ヒータとしては、例えばハロゲンランプを用いることができ、主に基板中央部に熱線を照射するインサイド用ランプである単体ヒータと、主に基板の周辺部に熱線を照射するアウトサイド用ランプである単体ヒータとを並べてヒータ１５ａ、１５ｂを形成する。これらインサイド／アウトサイド用の単体ヒータの照射強度を各々調節して基板を面内均一に加熱する。
上のヒータ１５ａの上側及び下のヒータ１５ｂの下側に、上下のドーナツ状リフレクタ１６ａ、１６ｂが各々配置される。この上下のドーナツ状リフレクタ１６ａ、１６ｂの少なくとも一つは、ヒータ１５ａ、１５ｂの熱放射を収束させる円筒凹面形状の収束反射板部と、熱放射を分散させる平板形状の分散反射板部とを有する。これら収束反射板部、分散反射板部は、交互に形成されてもよいし、回転対称又は線対称に形成されてもよい。
That is, the upper and lower heaters 15a and 15b have a plurality of rod-shaped single heaters arranged radially in a circle. As the single heater, for example, a halogen lamp can be used. The single heater is an inside lamp that mainly radiates heat rays to the central portion of the substrate, and the outside lamp that mainly radiates heat rays to the peripheral portion of the substrate. Heaters 15a and 15b are formed side by side with a single heater. The substrate is heated uniformly in the plane by adjusting the irradiation intensity of each of the inside / outside single heaters.
Upper and lower donut-shaped reflectors 16a and 16b are respectively arranged above the upper heater 15a and below the lower heater 15b. At least one of the upper and lower donut-shaped reflectors 16a and 16b has a cylindrical concave converging reflection plate portion for converging the heat radiation of the heaters 15a and 15b, and a flat plate-shaped dispersion reflection plate portion for dispersing the heat radiation. . These convergent reflection plate portions and dispersion reflection plate portions may be formed alternately, or may be formed rotationally or line-symmetrically.
そして、本発明のエピタキシャル成長装置１０Ａは、前記シリコン単結晶基板Ｗ又は前記サセプタ１２の近傍に吸収体１７が設けられており、前記ヒータ１５ａ、１５ｂからの熱線を吸収する吸収領域を有している。前記吸収体である吸収体１７は円盤状であり、前記吸収体の直径が、前記シリコン単結晶基板の直径の５〜５０％の範囲にある。なお、前記シリコン単結晶基板は円盤状のウェーハである。 In the epitaxial growth apparatus 10A of the present invention, an absorber 17 is provided in the vicinity of the silicon single crystal substrate W or the susceptor 12, and has an absorption region that absorbs heat rays from the heaters 15a and 15b. . The absorber 17 as the absorber is disk-shaped, and the diameter of the absorber is in the range of 5 to 50% of the diameter of the silicon single crystal substrate. The silicon single crystal substrate is a disc-shaped wafer.
図１の例では、吸収体１７は円盤状のものを示した。図１の例では、吸収体１７としては、炭素製基材を炭化珪素で被覆したものを示した。このように、炭化珪素製又は炭素製基材を炭化珪素で被覆したものであれば、ヒータからの熱放射を効果的に吸収させることができる。そして、前記吸収体の位置がサセプタ１２の下方で、前記サセプタ１２の下面からの距離がシリコン単結晶基板Ｗの直径の２０％未満の範囲としてある。 In the example of FIG. 1, the absorber 17 is a disc-shaped one. In the example of FIG. 1, as the absorber 17, a carbon base material coated with silicon carbide is shown. Thus, if the silicon carbide or carbon substrate is coated with silicon carbide, the heat radiation from the heater can be effectively absorbed. The position of the absorber is below the susceptor 12 and the distance from the lower surface of the susceptor 12 is within a range of less than 20% of the diameter of the silicon single crystal substrate W.
上記のように吸収体１７を設けることで、前記上のヒータ１５ａ、１５ｂからの熱線を吸収させる吸収領域が形成され、シリコン単結晶基板Ｗの局所的な部分の温度を低下させることができる。故に、シリコン単結晶基板Ｗを面内で均一に加熱することができるため、面内均一な膜厚のエピタキシャル層を成長させることができ、高品質のエピタキシャルウェーハを製造することができる。 By providing the absorber 17 as described above, an absorption region that absorbs heat rays from the heaters 15a and 15b is formed, and the temperature of a local portion of the silicon single crystal substrate W can be lowered. Therefore, since the silicon single crystal substrate W can be heated uniformly in the plane, an epitaxial layer having a uniform thickness in the plane can be grown, and a high-quality epitaxial wafer can be manufactured.
次に、本発明に係るエピタキシャル成長装置の別の実施の形態を図２（ａ）（ｂ）に示す。図２（ａ）（ｂ）において、本発明のエピタキシャル成長装置１０Ｂは、散乱体２０としてリング形状の金メッキ製反射体を用いた以外は上記したエピタキシャル成長装置１０Ａと同様の構成である。なお、このような反射体の材質としては、例えば、ステンレス等の金属材料を金メッキしたものとすることができる。 Next, another embodiment of the epitaxial growth apparatus according to the present invention is shown in FIGS. 2A and 2B, the epitaxial growth apparatus 10B of the present invention has the same configuration as the epitaxial growth apparatus 10A described above except that a ring-shaped gold-plated reflector is used as the scatterer 20. In addition, as a material of such a reflector, metal materials, such as stainless steel, can be gold-plated, for example.
前記上のヒータからの熱線を散乱させる散乱体２０は、前記シリコン単結晶基板Ｗの直上に設けられており、前記シリコン単結晶基板Ｗの上面と前記上側ドーナツ状リフレクタ１４ａの下端との間に、支持部２２を介して設けられている。そして、散乱体２０の位置がシリコン単結晶Ｗの基板面の上方で、前記シリコン単結晶基板Ｗの表面からの距離が前記シリコン単結晶基板Ｗの直径の２０％未満の範囲にある。 The scatterer 20 that scatters heat rays from the upper heater is provided immediately above the silicon single crystal substrate W, and is located between the upper surface of the silicon single crystal substrate W and the lower end of the upper donut-shaped reflector 14a. The support portion 22 is provided. The position of the scatterer 20 is above the substrate surface of the silicon single crystal W, and the distance from the surface of the silicon single crystal substrate W is in the range of less than 20% of the diameter of the silicon single crystal substrate W.
上記のように散乱体２０を設けることで、前記シリコン単結晶基板Ｗの上面と前記上の円筒状リフレクタ１４ａの下端との間に、前記上のヒータ１５ａからの熱線を散乱させる散乱体が形成され、シリコン単結晶基板Ｗの局所的な部分の温度を低下させることが出来る。故に、シリコン単結晶基板Ｗを面内で均一に加熱することができるため、面内均一な膜厚のエピタキシャル層を成長させることができ、高品質のエピタキシャルウェーハを製造することができる。 By providing the scatterer 20 as described above, a scatterer that scatters heat rays from the upper heater 15a is formed between the upper surface of the silicon single crystal substrate W and the lower end of the upper cylindrical reflector 14a. Thus, the temperature of the local portion of the silicon single crystal substrate W can be lowered. Therefore, since the silicon single crystal substrate W can be heated uniformly in the plane, an epitaxial layer having a uniform thickness in the plane can be grown, and a high-quality epitaxial wafer can be manufactured.
また、散乱体２０は、石英製散乱体とすることで、単体ヒータからの熱放射を効果的に散乱させることもできる。また、それらの表面粗さ、表面形状等を変えることで、散乱の度合いを調節することも容易である。 Moreover, the scatterer 20 can be effectively made to scatter thermal radiation from a single heater by using a quartz scatterer. It is also easy to adjust the degree of scattering by changing the surface roughness, surface shape, and the like.
石英製散乱体とした場合の表面粗さは、Ｒａ０．０１〜１０μｍであることが好ましい。また、石英製散乱体とした場合には、高さ０．１〜１０ｍｍの凹凸表面を有する形状であるのがさらに好適である。さらに、前記石英製散乱体が、波長１５５０ｎｍにおける透過率で２５％を超えることが好ましい。 When the quartz scatterer is used, the surface roughness is preferably Ra 0.01 to 10 μm. In the case of a quartz scatterer, a shape having an uneven surface with a height of 0.1 to 10 mm is more preferable. Furthermore, it is preferable that the quartz scatterer exceeds 25% in transmittance at a wavelength of 1550 nm.
以下、実施例及び比較例を示して本発明をより具体的に説明するが、本発明はこれに限定されるものではない。 EXAMPLES Hereinafter, although an Example and a comparative example are shown and this invention is demonstrated more concretely, this invention is not limited to this.
（実施例１・比較例１）
実施例１として、図１のような直径３００ｍｍウェーハ用の枚葉式エピタキシャル成長装置において、直径３００ｍｍのシリコンウェーハの中心温度を１１００℃に加熱したときのウェーハ面内温度分布を測定した。測定は、特公平０７−０５８７３０に記載されている方法で行った。これは、イオン注入によって表面に不純物注入層が形成された拡散ウェーハを用意し、熱拡散後のシート抵抗を測定することによりウェーハの面内温度分布を求める方法である。実施例１では、図１に示すように、サセプタの下方でサセプタの下面からの距離が１５ｍｍの位置に直径５０ｍｍの円盤状の炭化珪素で被覆された炭素製の吸収体を設置した。このときのウェーハ中心部の温度減衰量（本願散乱体を設置した場合の、設置しなかった場合に比較した温度の低下量）は５．８℃、ウェーハ面内温度分布（ウェーハ面内温度均一性）は±３．６℃であった。実施例１の温度減衰量とウェーハ面内温度分布を表１に示す。
(Example 1 and Comparative Example 1)
As Example 1, in a single wafer epitaxial growth apparatus for a 300 mm diameter wafer as shown in FIG. 1, the temperature distribution in the wafer surface was measured when the center temperature of a silicon wafer having a diameter of 300 mm was heated to 1100 ° C. The measurement was performed by the method described in Japanese Patent Publication No. 07-058730. In this method, a diffusion wafer having an impurity injection layer formed on the surface by ion implantation is prepared, and the in-plane temperature distribution of the wafer is obtained by measuring the sheet resistance after thermal diffusion. In Example 1, as shown in FIG. 1, a carbon absorber covered with disc-shaped silicon carbide having a diameter of 50 mm was installed at a position 15 mm away from the lower surface of the susceptor below the susceptor. At this time, the temperature attenuation at the center of the wafer (when the scatterer of the present application is installed, the amount of decrease in temperature compared to when it is not installed) is 5.8 ° C., and the temperature distribution within the wafer (uniform temperature within the wafer) Property) was ± 3.6 ° C. Table 1 shows the temperature attenuation and the in-wafer temperature distribution in Example 1.
また、比較例１として、図３に示した従来の直径３００ｍｍウェーハ用の枚葉式エピタキシャル成長装置１００において、シリコンウェーハの中心温度を１１００℃に加熱したときのウェーハ面内温度分布を実施例１と同様に測定した。従来の枚葉式エピタキシャル成長装置１００は、図１の吸収体１７が設置されていないこと以外は図１の枚葉式エピタキシャル成長装置１０Ａと同様の構成である。比較例１の温度分布を図４に示す。比較例１の温度減衰量とウェーハ面内温度分布を表１に示す。比較例１のウェーハ面内温度分布は±６．５℃であった。 Further, as Comparative Example 1, in the conventional single wafer epitaxial growth apparatus 100 for a 300 mm diameter wafer shown in FIG. 3, the in-plane temperature distribution when the center temperature of the silicon wafer is heated to 1100 ° C. It measured similarly. The conventional single wafer epitaxial growth apparatus 100 has the same configuration as the single wafer epitaxial growth apparatus 10A of FIG. 1 except that the absorber 17 of FIG. 1 is not installed. The temperature distribution of Comparative Example 1 is shown in FIG. Table 1 shows the temperature attenuation and the in-wafer temperature distribution in Comparative Example 1. The wafer surface temperature distribution of Comparative Example 1 was ± 6.5 ° C.
（実施例２）
図２（ａ）（ｂ）のように、ウェーハ中心部の直上にリング形状の散乱体として円筒シリンダ形の散乱体を設置した直径３００ｍｍウェーハ用の枚葉式エピタキシャル成長装置において、シリコンウェーハの中心温度を１１００℃に加熱したときのウェーハ面内温度分布を実施例１と同様に測定した。円筒シリンダ形の散乱体としては、図２（ｂ）に示すように、直径ｄが８０ｍｍ、シリンダ高さｈが５ｍｍ、厚さｔが２ｍｍのものを使用した。使用した散乱体はリング形状の金メッキ製反射体であり、設置高さ（ウェーハ表面からの距離）を５ｍｍ，２０ｍｍ，３０ｍｍ，４０ｍｍ，５０ｍｍ，６０ｍｍと変更し温度減衰量を評価したところ、表２に示すように、それぞれ２２．３℃，２２．１℃，１７．３℃，１５．４℃，１０．２℃，３．４℃であった。また、ウェーハ面内温度分布は、表２に示すようにそれぞれ±６．３℃，６．２℃，３．８℃，２．８℃，１．６℃，９．６℃であった。実施例２−５のウェーハ面内温度分布を図５に示す。
(Example 2)
As shown in FIGS. 2A and 2B, in a single wafer epitaxial growth apparatus for a 300 mm diameter wafer in which a cylindrical cylinder-shaped scatterer is installed as a ring-shaped scatterer directly above the center of the wafer, the center temperature of the silicon wafer The temperature distribution in the wafer surface when the substrate was heated to 1100 ° C. was measured in the same manner as in Example 1. As the cylindrical / cylindrical scatterer, a scatterer having a diameter d of 80 mm, a cylinder height h of 5 mm, and a thickness t of 2 mm was used as shown in FIG. The used scatterer is a ring-shaped gold-plated reflector, and the installation height (distance from the wafer surface) was changed to 5 mm, 20 mm, 30 mm, 40 mm, 50 mm, and 60 mm, and the temperature attenuation was evaluated. As shown in Fig. 2, they were 22.3 ° C, 22.1 ° C, 17.3 ° C, 15.4 ° C, 10.2 ° C and 3.4 ° C, respectively. Further, as shown in Table 2, the in-plane temperature distributions were ± 6.3 ° C., 6.2 ° C., 3.8 ° C., 2.8 ° C., 1.6 ° C., and 9.6 ° C., respectively. FIG. 5 shows the temperature distribution in the wafer surface of Example 2-5.
（実施例３）
図２（ａ）（ｂ）のように、ウェーハ中心部の直上にリング形状の散乱体を設置した直径３００ｍｍウェーハ用の枚葉式エピタキシャル成長装置において、シリコンウェーハの中心温度を１１００℃に加熱したときのウェーハ面内温度分布を実施例１と同様に測定した。散乱体は直径ｄが８０ｍｍの円筒シリンダ形のリング形状の金メッキ製反射体であり、シリンダ高さｈを２ｍｍ，１０ｍｍ，２０ｍｍに変更したもの（厚さｔは２ｍｍ）、および直径０．５ｍｍの金メッキ細線を螺旋状に重ねた形状（直径ｄは８０ｍｍ）の反射体を使用した。温度減衰量を評価したところ、表３に示すように、それぞれ１１．２℃，２２．９℃，４０．３℃，５．０℃であった。また、ウェーハ面内温度分布は、表３に示すようにそれぞれ±１．６℃，６．６℃，１５．３℃，４．０℃であった。
(Example 3)
As shown in FIGS. 2A and 2B, when the center temperature of the silicon wafer is heated to 1100 ° C. in a single wafer epitaxial growth apparatus for a 300 mm diameter wafer in which a ring-shaped scatterer is installed immediately above the wafer center. The wafer in-plane temperature distribution was measured in the same manner as in Example 1. The scatterer is a cylindrical cylinder-shaped ring-shaped gold-plated reflector having a diameter d of 80 mm, and the cylinder height h is changed to 2 mm, 10 mm, and 20 mm (thickness t is 2 mm), and the diameter is 0.5 mm. A reflector having a shape in which gold-plated fine wires are spirally stacked (diameter d is 80 mm) was used. When the amount of temperature attenuation was evaluated, as shown in Table 3, they were 11.2 ° C., 22.9 ° C., 40.3 ° C., and 5.0 ° C., respectively. In addition, as shown in Table 3, the wafer in-plane temperature distribution was ± 1.6 ° C., 6.6 ° C., 15.3 ° C., and 4.0 ° C., respectively.
（実施例４）
図２（ａ）（ｂ）のように、ウェーハ中心部の直上にリング形状の散乱体を設置した直径３００ｍｍウェーハ用の枚葉式エピタキシャル成長装置において、ウェーハ中心温度を１１００℃に加熱したときのウェーハ面内温度分布を実施例１と同様に測定した。散乱体は直径ｄが８０ｍｍの円筒シリンダ形のリング形状の石英製であり（厚さｔは２ｍｍ）、シリンダの表面粗さをＲａ＝０．０１μｍ，０．１μｍ，１０μｍに加工したもの、及びシリンダ表面に幅２ｍｍ、深さ０．５ｍｍの溝を２ｍｍ間隔で加工した凹凸表面を有するものの温度減衰量を評価したところ、表４に示すように、それぞれ５．４℃，８．０℃，１２．９℃，１２．１℃であった。また、ウェーハ面内温度分布は、表４に示すようにそれぞれ±３．８℃，２．５℃，１．６℃，１．６℃であった。
Example 4
The wafer when the wafer center temperature is heated to 1100 ° C. in a single wafer epitaxial growth apparatus for a 300 mm diameter wafer in which a ring-shaped scatterer is installed immediately above the wafer center as shown in FIGS. The in-plane temperature distribution was measured in the same manner as in Example 1. The scatterer is made of a cylindrical cylinder-shaped ring-shaped quartz having a diameter d of 80 mm (thickness t is 2 mm), and the cylinder surface roughness is processed to Ra = 0.01 μm, 0.1 μm, 10 μm, and As shown in Table 4, when the surface of the cylinder having a concavo-convex surface obtained by processing grooves with a width of 2 mm and a depth of 0.5 mm at intervals of 2 mm was evaluated, as shown in Table 4, 5.4 ° C., 8.0 ° C. 12.9 ° C and 12.1 ° C. The in-plane temperature distributions were ± 3.8 ° C., 2.5 ° C., 1.6 ° C., and 1.6 ° C., respectively, as shown in Table 4.
（実施例５）
図２（ａ）（ｂ）のように、ウェーハ中心部の直上にリング形状の吸収体を設置した直径３００ｍｍウェーハ用の枚様式エピタキシャル成長装置において、ウェーハ中心温度を１１００℃に加熱したときのウェーハ面内温度分布を実施例１と同様に測定した。吸収体は直径ｄが８０ｍｍの円筒シリンダ形状の石英製であり（厚さｔは２ｍｍ）、波長１５５０ｎｍにおける透過率を８０％，２５％，１％と加工したものの温度減衰量を評価したところ、表５に示すようにそれぞれ９．２℃，３２．０℃，４０．０℃であった。また、ウェーハ面内温度分布は表５に示すようにそれぞれ±１．９℃，１１．１℃，１５．１℃であった。
(Example 5)
As shown in FIGS. 2A and 2B, the wafer surface when the wafer center temperature is heated to 1100 ° C. in a single wafer epitaxial growth apparatus for a 300 mm diameter wafer in which a ring-shaped absorber is installed immediately above the wafer center. The internal temperature distribution was measured in the same manner as in Example 1. The absorber is made of quartz in the shape of a cylindrical cylinder having a diameter d of 80 mm (thickness t is 2 mm), and when the transmittance at a wavelength of 1550 nm is processed as 80%, 25%, and 1%, the temperature attenuation amount is evaluated. As shown in Table 5, they were 9.2 ° C, 32.0 ° C, and 40.0 ° C, respectively. Further, as shown in Table 5, the in-plane temperature distribution of the wafer was ± 1.9 ° C., 11.1 ° C., and 15.1 ° C., respectively.
このように、本発明のエピタキシャル成長装置を用いることで、ウェーハの局所的な部分の温度を低下させることができ、また低下量のコントロールが可能であることが示された。 As described above, it was shown that the temperature of a local portion of the wafer can be lowered and the amount of reduction can be controlled by using the epitaxial growth apparatus of the present invention.
なお、上記実施形態は、例示であり、本発明の特許請求の範囲に記載された技術的思想と実質的に同一な構成を有し、同様な作用効果を奏するものは、いかなるものであっても本発明の技術的範囲に包含される。 The above-described embodiment is an exemplification, and the embodiment having substantially the same configuration as the technical idea described in the claims of the present invention and having the same function and effect is any type. Are also included in the technical scope of the present invention.
１０Ａ，１０Ｂ：本発明のエピタキシャル成長装置、１１：反応室、１２：サセプタ、１３：支持軸、１４ａ、１４ｂ：円筒状のリフレクタ、１５ａ、１５ｂ：ヒータ、１６ａ、１６ｂ：ドーナツ状リフレクタ、１７：吸収体、２０：散乱体、２２：支持部、２４ａ，２４ｂ：アーム部、１００：従来のエピタキシャル成長装置、ｄ：直径、ｈ：高さ、ｔ：厚さ、Ｗ：シリコン単結晶基板。 10A, 10B: epitaxial growth apparatus of the present invention, 11: reaction chamber, 12: susceptor, 13: support shaft, 14a, 14b: cylindrical reflector, 15a, 15b: heater, 16a, 16b: donut-shaped reflector, 17: absorption Body: 20: scatterer, 22: support part, 24a, 24b: arm part, 100: conventional epitaxial growth apparatus, d: diameter, h: height, t: thickness, W: silicon single crystal substrate.
Claims (11)
前記シリコン単結晶基板又は前記サセプタの近傍に前記ヒータからの熱線を散乱する散乱体及び／又は前記ヒータからの熱線を吸収する吸収体を有し、前記散乱体及び／又は前記吸収体が略円形状に設けられてなり、前記散乱体及び／又は前記吸収体の直径が、前記シリコン単結晶基板の直径の５〜５０％の範囲にあることを特徴とするエピタキシャル成長装置。 An epitaxial growth apparatus for growing an epitaxial layer on a main surface of a silicon single crystal substrate mounted substantially horizontally on a susceptor, the plurality of rod-shaped single heaters arranged above and below the susceptor and arranged radially in a circle And an upper and lower donut-shaped reflectors respectively disposed on the upper side of the upper heater and the lower side of the lower heater,
A scatterer that scatters heat rays from the heater and / or an absorber that absorbs heat rays from the heater is provided in the vicinity of the silicon single crystal substrate or the susceptor, and the scatterer and / or the absorber is substantially circular. An epitaxial growth apparatus characterized in that the scatterer and / or the absorber is provided in a shape and has a diameter in the range of 5 to 50% of the diameter of the silicon single crystal substrate.
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| KR102513858B1 (en) | 2020-12-11 | 2023-03-27 | 에스케이실트론 주식회사 | Susceptor supporter and epitaxial reactor including the same |
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