JPH0845863A - Single wafer semiconductor substrate heat treatment device - Google Patents

Abstract

PURPOSE:To improve temperature uniformity within a semiconductor substrate plane at the time of heating and applying light by arranging a plurality of infrared lamps formed in a ring-shape, which is almost same as that of the semiconductor substrate, concentrically and inclined more as they go outer in the substrate direction. CONSTITUTION:A susceptor or a substrate supporting table 12 equivalent to a heat uniformizing plate is provided in a quartz chamber 15 and a substrate 11 to be treated is placed on the substrate supporting table 12. A plurality of ring-shaped infrared lamps 13 are arranged in a circular arc at the top and bottom of the substrate 11, and on the rear plane of the infrared lamp 13, a reflection plate 14 is provided so as to improve substrate heating and temperature uniformity. The ring-shaped infrared lamps 13 are arranged concentrically in parallel at the same intervals, are inclined in the substrate direction as they go outer and are arranged on a circular arc line on the cross-section. The infrared lamps 13 are formed in a shape almost same as that of a substrate wafer, namely, circle, square, triangle, etc.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for heat-treating a semiconductor substrate using an infrared lamp.
By improving the temperature uniformity by making the irradiation amount to the object to be treated uniform, the accuracy of heat treatment can be improved,
The present invention relates to a single-wafer heat treatment apparatus for semiconductor substrates with improved productivity.

[0002]

2. Description of the Related Art In recent years, with the increase in size (large diameter) of semiconductor substrates to be processed, it has become necessary to process the semiconductor substrates one by one. Therefore, the lamp heating method is often used as a heating source for increasing productivity. Therefore, in the conventional lamp heat treatment apparatus, as shown in FIG. 10, the straight tube type infrared lamp 1 is arranged in parallel above the wafer-2, and in some cases, the straight tube type infrared lamp 1 is arranged. As shown in FIG. 11, the temperature is improved by arranging them orthogonally, but with this method, the heat dissipation degree is different between the central part and the outer peripheral part of the substrate, so that the substrate temperature becomes uneven. was there. When the substrate is small, this difference is not a serious problem, but in a single-wafer type heat treatment apparatus that processes a large-diameter substrate, this is a serious problem.

Recently, however, an apparatus in which the infrared lamp is formed in a circular ring shape has also been proposed. However, in this apparatus, since the infrared lamps are arranged so as to be on the same plane, the substrate is similarly formed. The problem that the substrate temperature becomes non-uniform due to the difference in heat radiation degree between the central portion and the outer peripheral portion cannot be solved at all. Therefore, similar to the conventional apparatus shown in FIGS. 10 and 11, the in-plane temperature uniformity at the time of temperature rise deteriorates,
There is a problem in that the treated surface is damaged and the substrate material is deteriorated. Therefore, none of the conventional single-wafer-type lamp heating and heat treatment apparatuses for processing a large-diameter substrate have been fully satisfactory in practical use.

[0004]

SUMMARY OF THE INVENTION The present invention solves the problems of the conventional single-wafer-type lamp heat treatment apparatus at once, and is excellent in uniformity of in-plane temperature during heating and irradiation. It is an object of the present invention to provide a heat treatment apparatus for a substrate.

[0005]

In order to achieve the above object, the present inventor has conducted earnest studies and, as a result, formed an infrared lamp in a ring shape substantially the same as the shape of the substrate and concentric with the infrared lamp. It has been found that the in-plane temperature uniformity at the time of temperature rise and irradiation is remarkably enhanced by arranging so as to incline toward the substrate as it goes outward and the present invention has been reached.

That is, the present invention is characterized in that a plurality of infrared lamps formed in a ring shape substantially the same as the shape of the semiconductor substrate are concentrically arranged and are inclined toward the substrate toward the outside. To do. In short, the present invention provides a plurality of infrared lamps formed in a ring shape that is substantially the same as the shape of the semiconductor substrate so as to be concentric with each other and to be inclined toward the substrate toward the outside, thereby providing a central portion of the substrate. The gist is to eliminate the non-uniformity of the substrate temperature due to the difference in heat radiation degree from the outer peripheral portion. Furthermore, by measuring the temperature at multiple points on the substrate and adjusting the output of the infrared lamp based on the measurement results, it is possible to equalize the minute temperature differences, so that a nearly perfect in-plane temperature Uniformity can be obtained.

[0007]

Embodiments of the present invention will now be described with reference to the drawings. FIG. 1 is a cross-sectional view showing an embodiment of the present invention, in which a substrate support 12 such as a susceptor or a heat equalizing plate is installed in a quartz chamber 15 and a substrate 11 to be processed is placed on the substrate support 12. Is placed, and above and below the substrate 11,
A large number of ring-shaped infrared lamps (tungsten-halogen lamps, far-infrared lamps) 13 are arranged in an arc shape,
A reflective plate 14 is provided on the back surface of the infrared lamp 13 to improve heating of the substrate and uniformity of temperature.

By the radiation thermometer 16 for temperature monitor,
By measuring the temperature of the center and the periphery of the substrate 11 to be processed and sending the signal to the repeater 19, the temperature signal is converted into a voltage or current signal, and as shown in FIG. And the resulting signal is sent to the SCR to control the output of the infrared lamp 13 so that the substrate has a uniform temperature. In the above-mentioned embodiment, the infrared lamp 13 is arranged above and below the substrate 11, but it may be arranged only below as shown in FIG. 8 or only above as shown in FIG. It may be.

A rotation shaft 17 is rotatably connected to the center of the back surface of the substrate holder 12 by a rotation mechanism portion 18. By rotating the substrate holder 12 during the substrate processing, the temperature of the substrate 11 itself can be made more uniform. Infrared lamp 13 formed in a ring shape
As shown in FIGS. 1 and 3, are arranged concentrically in parallel and at equal intervals, and are inclined toward the substrate toward the outside,
It is arranged so as to be located on an arcuate line in a vertical cross section.

As shown in FIGS. 2, 3 and 4, the infrared lamp 3 is formed in a shape of a circle, a quadrangle, a triangle, etc. which is substantially the same as the shape of the substrate wafer. FIG. 5 is a cross-sectional view showing an example of a rectangular reaction tube processed at room temperature, and FIG. 6 is a top view thereof. The substrate 11 is placed on the cylindrical substrate support 12 'inside the quartz chamber 15 of the rectangular reaction tube, and the infrared lamp 13 is introduced from above and below the substrate 11 while introducing the reaction gas into the quartz chamber 15. An example of irradiating is shown.

The radiation thermometer 16 measures the temperature at a plurality of places on the substrate, the repeater 19 converts the temperature into a current or voltage signal, and the signal is checked by a controller for the difference from the set temperature. The signal is used to control the SCR to adjust the output of the infrared lamp 13 that mainly irradiates the measured location so that the substrate has a uniform temperature. With this structure, it is possible to obtain ideal temperature uniformity that is not found in conventional methods. In the above embodiment, the radiation thermometer 16 is used to measure the temperature of the substrate, but this may be other temperature measuring means, for example, the thermocouple 19 shown in FIG. In the above-mentioned embodiment, the temperatures at three points on the substrate were measured, but it goes without saying that the number is not particularly limited as long as it is plural.

[0012]

According to the present invention, since a plurality of infrared lamps formed in a ring shape substantially the same as the shape of the semiconductor substrate are arranged concentrically and inclined toward the substrate toward the outside,
Since more energy can be applied to the outer peripheral portion having a higher degree of heat radiation, the substrate can be heated so as to be substantially uniform, and the uneven temperature is less likely to occur. Furthermore, by measuring the temperature at multiple locations on the substrate and adjusting the output of the infrared lamp so that the substrate temperature is uniform, even a slight difference in temperature can be made uniform, so ideal temperature uniformity is achieved. Obtainable.

[0013]

As described above, according to the present invention, the ring-shaped infrared lamp is made to have substantially the same shape as the substrate, and the infrared lamp is arranged so as to be inclined toward the substrate toward the outside, so that the temperature unevenness of the substrate can be prevented. It is hard to occur. In addition, by measuring the temperature at multiple locations on the substrate and adjusting the output of the infrared lamp, it is possible to adjust the temperature to a more uniform temperature. Therefore, it is possible to perform extremely ideal heat treatment of a semiconductor substrate such as no problem such as deterioration of the substrate material.

[0014]

[Brief description of drawings]

FIG. 1 is a sectional view showing an embodiment of the present invention.

FIG. 2 is a plan view of the infrared lamp of the present invention.

FIG. 3 is a plan view showing another example of the infrared lamp of the present invention.

FIG. 4 is a plan view showing another example of the infrared lamp of the present invention.

FIG. 5 is a cross-sectional view showing another embodiment of the present invention.

FIG. 6 is a plan view of FIG.

FIG. 7 is a sectional view showing another embodiment of the present invention.

FIG. 8 is a sectional view showing another embodiment of the present invention.

FIG. 9 is a cross-sectional view showing another embodiment of the present invention.

FIG. 10 is a perspective view of a conventional infrared lamp heating device.

11 is a plan view of FIG.

[Explanation of symbols]

 11 Substrate 12, 12 'Substrate Support 13 Infrared Lamp 14 Reflector 15 Quartz Chamber-16 Radiation Thermometer 19 Thermocouple

Claims (4)

[Claims] 1. A semiconductor substrate comprising a plurality of infrared lamps, which are formed in a ring shape substantially the same as the shape of the semiconductor substrate and are concentric and inclined toward the substrate toward the outside. Single wafer heat treatment equipment. 2. The heat treatment apparatus according to claim 1, wherein a reflecting plate is provided on the back surface of the infrared lamp. 3. The heat treatment apparatus according to claim 1, wherein the infrared lamps are configured so that their outputs can be controlled individually or in units of a zone in which several lamps are included in one zone. 4. The temperature of the substrate is measured by a plurality of radiation thermometers for temperature monitors or thermocouples, and the output of the infrared lamp is controlled so that the substrate temperature becomes uniform. Item 5. The heat treatment equipment according to Item 3.