JPH1097999A - Heating device, processing device, heating method and processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To keep the temperature of a to-be-heated body and a to-be-processed body even in circumferential direction as well and to keep evenness in temperature over the entire surface by providing a means for relatively rotating a heating means and the to-be-heated body, wherein the heating means has a constitution where unevenness in temperature occurring in circumferential direction of the to-be-heated body is compensated. SOLUTION: Inside a chamber 101, a supporting means such as a susceptor 111 is provided, and a heating means 126 is provided at a specified position of a rotation table 122. A rotation means 145 for rotating the heating means 126 comprises a driving means 144 and a rotation part 121. When, in a heating area, a temperature uneven area whose temperature is different from, partially, the area except for the temperature an even area exists, and temperature unevenness occurs in the heating area, a sub heating source 127X in its rotation action, heats the temperature uneven area with the output corresponding to temperature difference between the temperature uneven area and the area except for that. Thus, temperature evenness of a wafer W is improved.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to a heating apparatus, a processing apparatus, a heating method and a processing method.

[0002]

2. Description of the Related Art In a semiconductor manufacturing process, an object to be processed,
For example, to form an integrated circuit on a semiconductor wafer, CV
A process of forming a thin film on a semiconductor wafer is performed using a processing apparatus such as a D apparatus or a sputtering apparatus. The unevenness in film thickness generated in the film forming process causes a reduction in the yield of integrated circuit elements as products. The above-mentioned unevenness in film thickness is caused by temperature unevenness occurring in the surface of the semiconductor wafer when the semiconductor wafer as the object to be processed is heated. For this reason, in the film forming process, it is an important technical subject to maintain the in-plane uniformity of the temperature of the semiconductor wafer.

FIG. 6 shows a conventional energy beam heating type processing apparatus.
This will be described with reference to FIG. As shown in FIG. 6, in the processing chamber 301, an object to be processed, for example, a semiconductor wafer (hereinafter, referred to as a wafer) W is mounted on the mounting means 311. A processing gas is supplied onto the surface of the wafer W by a gas supply unit (not shown) through a processing gas supply port 312 and a perforated plate 313. Further, the inside of the processing chamber 301 is depressurized to a predetermined degree of vacuum through an exhaust port 314 by an exhaust unit (not shown).

Further, a heating means chamber 302 is provided below the processing chamber 301. A heating means 321 is provided in the heating means chamber 302. This heating means 3
21 is a heating lamp, for example, a halogen lamp 322;
And a reflection mirror 323, and is provided on the rotating table 324.

At the bottom of the processing chamber 301, there is provided a transmission window 315 made of an energy ray transmitting material, for example, sapphire or quartz glass. This transmission window 315
Irradiation light from the heating means 321 is applied to the semiconductor wafer W through the interface.

The heating means 321 is divided into a plurality of sets. As shown in FIG.
By rotating 4, each set of the heating means 321 forms a separate annular irradiation area 331, 332, 333 on the wafer W for each set. The energy applied to each of the annular irradiation areas 331, 332, 333 is individually adjusted.

In the heating means chamber 302, a cooling air inlet 325 is provided by cooling air supply means (not shown).
The cooling air is introduced from. The cooling air prevents the heating means chamber 302, the transmission window 315 and the heating means 321 from being overheated.

In the above-mentioned apparatus, it is possible to improve the temperature uniformity of the object to be processed in the radial direction by individually adjusting the energy applied to each annular irradiation area.

[0009]

However, in the above-described apparatus, contact between the placing means 311 and the semiconductor wafer W, cooling air introduced into the heating means chamber 302, Due to the effects of heat absorption and heat radiation of the wafer W not being constant in the wafer plane due to the asymmetry of the shape and material, etc., the wafer W
Temperature unevenness occurs in the circumferential direction, and it is difficult to maintain the temperature of the wafer W during processing uniformly over the entire surface of the wafer.

In view of the above-mentioned problems of the prior art, it is an object of the present invention to maintain the temperature of the object to be heated and the object to be processed uniformly even in the circumferential direction, and An object of the present invention is to provide a heating apparatus, a processing apparatus, a heating method, and a processing method capable of maintaining temperature uniformity over the entire surface of a processing body.

[0011]

Means for Solving the Problems The invention according to claim 1 comprises a heating means, a support means for supporting the object to be heated such that the object to be heated is arranged at a position heated by the heating means,
The heating device is provided with a rotating device for relatively rotating the object to be heated, and the heating device compensates for temperature unevenness generated in a circumferential direction of the object to be heated.

According to a second aspect of the present invention, there is provided a heating means, a supporting means for supporting the heated body such that the heated body is disposed at a position heated by the heating means, the heating means and the heated body. Rotating means for relatively rotating the heating object, and at least one of the heating means is provided in a first region of the heated object in a relative rotating operation of the heating means and the heated object. And the second region is heated with different outputs.

According to a third aspect of the present invention, there is provided a processing chamber, and a supporting means for supporting an object to be processed at a processing position in the processing chamber;
A processing gas supply unit that supplies a processing gas to the processing position, and a heating unit provided at a heating position of the object to be processed,
Rotating means for relatively rotating the object and the heating means, at least one of the heating means, in the relative rotation of the heating means and the object, For the first and second areas of the object,
It is characterized by heating with different outputs.

According to a fourth aspect of the present invention, there is provided a heating step of heating the object to be heated, a step of relatively rotating the object to be heated and the heating means at a predetermined speed, and a step of rotating the object to be heated in the circumferential direction. And a step of compensating for the temperature non-uniformity that has occurred.

According to a fifth aspect of the present invention, when heating the object to be heated while relatively rotating the heating means and the object to be heated, at least one of the heating means includes a second one of the heating means. A step of heating the output of at least one of the heating means as a predetermined value when at the heating position of the one region, at least one of the heating means is a second one of Heating the output of at least one of the heating means to a value different from the predetermined value when the device is at the heating position of the region.

According to a sixth aspect of the present invention, in performing predetermined processing on the object to be processed while relatively rotating the heating means and the object to be processed, at least one of the heating means is provided with the object to be processed. Heating the output of at least one of the heating means as a predetermined value when at the heating position of the first region in, the at least one of the heating means is the second of the heating means in the object And heating the output of at least one of the heating means to a value different from the predetermined value when in the heating position of the second region.

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment in which the present invention is applied to a lamp heating type single wafer CVD apparatus will be described below with reference to FIGS. In these drawings, components having the same functions are denoted by the same reference numerals and described.

As shown in FIG. 1, the CVD apparatus comprises processing units 1A, 1B, 1C and a transport unit 2.
In FIG. 1, the direction of arrow X is from front to back.
In the processing units 1A, 1B, and 1C, a CVD process is performed on, for example, a semiconductor wafer (hereinafter, referred to as a wafer) W as an object to be processed or an object to be heated. Further, the transfer unit 2 transfers the wafer W between the processing units 1A, 1B, and 1C and a cassette chamber described later.

First, the transport section 2 will be described. 2 in the figure
Reference numeral 01 denotes a load lock type transfer room. This transfer room 20
1 includes a transfer means 211 composed of, for example, an articulated arm.
, A rotation stage 212 is provided. The rotation stage 212 is provided in front of the transfer unit 211.
On both sides of the tip of the arm constituting the transfer means 211,
A suction hole 211a is formed. This suction hole 211a
Is connected to an exhaust means (not shown) via a suction path (not shown). The transfer means 211 holds the wafer W at the distal end of the arm by vacuum suction, and connects a first cassette chamber 202A and a second cassette chamber 202B, which will be described later, to the processing section 1A.
It is configured such that the wafer W can be transferred to and from the processing unit 1B. Also, rotating stage 2
Numeral 12 constitutes a positioning unit together with a light emitting / receiving unit (not shown). The positioning means is configured to detect the center position of the wafer W and the orientation of the orientation flat (orientation flat) by rotating the wafer W by the rotation stage 212.

On the left and right sides of the transfer chamber 201, a first cassette chamber 202A is provided via a gate valve G1, and a second cassette chamber 202B is provided via a gate valve G2. Each of the cassette chambers 202A and 202B has a cassette stage 221 that can be moved up and down. A wafer cassette 222 is mounted on the cassette stage 221. The wafer cassette 222 is placed with the take-out portion of the wafer W facing in a predetermined direction.
Further, the unprocessed wafer W is stored in the wafer cassette 222 in the first cassette chamber 202A.
The processed wafers W are stored in the wafer cassettes 222 in 2B, respectively. The transfer chamber 201 is connected to the left, right, rear, and three directions via gate valves G5, G6, and G7, respectively.
One vacuum processing section 1A, 1B, 1C is provided.

Next, the vacuum processing sections 1A, 1B and 1C will be described with reference to FIG. In the figure, reference numeral 101 denotes a processing chamber, for example, a cylindrical chamber made of aluminum.
A support means, for example, a disc-shaped susceptor 111 is provided inside the chamber 101. This susceptor 111
Has a structure for accommodating the object to be processed, for example, a disk-shaped groove on the upper surface, and has a structure in which the wafer W is fitted and supported in the groove. The susceptor 111 is provided so that the wafer W can be heated by a heating unit to be described later, and heat can be transmitted from the susceptor 111.

A transmission window 112 is provided at the bottom of the chamber 101. The transmission window 112 is made of an energy ray transmission material, for example, quartz glass. The transmission window 112 is provided so as to irradiate the susceptor 111 with energy from a heating unit 126 described later via the transmission window 112. Further, a contact portion between the transmission window 112 and the lower wall of the chamber 101 is formed by a sealing means, for example, O
Sealed by a ring. The chamber 10
A temperature sensor, for example, a thermocouple 113 is provided so as to penetrate the side of the first chamber 1 and toward the center of the chamber 101. The thermocouple 113 is provided so that the temperature of the susceptor 111 can be measured. This thermocouple 113
Is sent to control means, for example, a computer.

At the top of the chamber 101, a gas supply unit 114 is provided. This gas supply unit 114
Are a processing gas supply port 115, a cleaning gas supply port 116, and three perforated plates 117A, 117B, 117C.
It is composed of The gas supply unit 114 receives the processing gas or the cleaning gas from the processing gas supply port 115 or the cleaning gas supply port 116 by a gas supply unit (not shown).
17B and 117C, the wafer W
Is provided so as to be uniformly supplied in the form of a shower on the processing surface.

An exhaust port 118 is provided on the side of the chamber 101. The exhaust port 118 is provided so that gas in the chamber can be exhausted through the exhaust port 118 by exhaust means (not shown). In addition, an inert gas supply port 119 is provided on the side of the chamber 101. The inert gas supply port 119 is filled with an inert gas, for example, nitrogen gas introduced through the inert gas supply port 119 by an inert gas supply unit (not shown).
It is provided so as to be supplied to a space surrounded by. A buffer plate 120 is provided in a portion surrounded by the susceptor 111 and the transmission window 112.
The buffer plate 120 has gas holes arranged, for example, in a grid or concentric manner so that the gas flow rate is uniform in the plane, and the inert gas introduced from the inert gas supply port 119 receives the buffer gas. It is provided so as to be uniformly supplied to the vicinity of the lower surface of the susceptor 111 via 120.

Below the chamber 101, a transmission window 112 is provided.
A heating means chamber 102 is provided continuously through the intermediary of the heating means. A rotating part 121 is provided in the heating means chamber 102.
The rotating section 121 includes a rotating table 122, a shaft 123, and a slip ring 124. The shaft is provided with a first pulley 142A. The first pulley 142A, together with a driving source, a second pulley, and a belt, constitutes a driving unit for the rotating unit 121, as described later. The slip ring 124 is connected to the heating source 1 by a power supply unit via a power supply terminal 124a.
27 is provided so as to be able to supply power. A position sensor, for example, an encoder 125 is provided below the slip ring 124. The encoder 125 is provided so that the rotation position of the rotation table 122 can be detected. The output from the encoder 125 is sent to control means, for example, a computer. The rotating section 121 is provided so as to be capable of rotating with respect to the heating means chamber 102 by a driving means described later. A bearing 10 is provided at a contact portion between the shaft 123 and the inner wall of the heating means chamber 102.
6 are provided. By the bearing 106, the rotation of the rotating portion 121 with respect to the heating means chamber 102 is smoothly performed.

A heating means 126 is provided at a predetermined position on the rotating table 122. This heating means 1
26 comprises a plurality of heating sources 127. This heating source 127
Has a heating lamp, for example, a halogen lamp 128 and a reflecting mirror 129. The heating unit 126 receives energy from the plurality of heating sources 127 through the transmission window 112,
Each is provided so as to be irradiated in a predetermined direction. As shown in FIG. 3, the heating sources 127 are disposed on a plurality of circumferences, for example, three concentric circumferences A, B, and C on the rotation table 122, and a first heating source group 127 A,
A second heating source group 127B and a third heating source group 127C are configured. However, the radius of each circumference is A>B> C. The first heating source 127A is composed of 15 heating sources. The second heating source group 127B is composed of six heating sources. Further, the third heating source group 127C includes:
It consists of two heating sources. Each of the heating source groups is provided so as to form a separate annular heating region for each of the heating source groups by rotating the rotation table 122.

The heating sources 127 are combined two by two in each heating source group to which the heating sources belong, to form a heating source pair 130. Each heating source pair is provided such that its output can be controlled independently for each heating source pair. In the heating source group 127A, 14 heating sources
One heating source pair is constituted. The remaining one heating source belonging to the heating source group 127A is provided so as to be used as the auxiliary heating source 127X. Further, the heating means room 10
A cooling air introduction port 131 and a cooling air exhaust port 132 are provided on the side of the second. The cooling air introduction port 131 and the cooling air exhaust port 132 are supplied with a heating source cooling gas, for example, nitrogen gas, in the vicinity of the heating source through the cooling air introduction port 131 by a cooling air supply unit (not shown). The cooling air is exhausted through the cooling air exhaust port 132 after cooling.

The driving means chamber 10 is provided in the heating means chamber 102.
4 are connected in series. A driving source in the driving means chamber 104;
For example, a variable speed AC motor 141 is provided. The driving means chamber 104 is provided so as to be able to rotate the rotating part 121 using the variable speed AC motor 141 as a driving source. Further, a second pulley 142B is provided on a rotating shaft of the variable speed AC motor 141, and
A belt 143 is provided for interlocking the pulley 142A and the second pulley 142B. Variable speed AC motor 14
The first and first pulleys 142A, the second pulley 142B, and the belt 143 constitute a driving unit 144 that drives the rotating unit 121. The driving means 144 and the turning part 121 constitute a turning means 145 for turning the heating means 126.

Next, the operation of the lamp heating type CVD apparatus configured as described above will be described. The following operation is automatically executed according to a program stored in advance. First, the gate valve G1 is opened. Next, the wafer W in the cassette 222 is vacuum-sucked on the arm of the transfer means 211 by the transfer means 211 and is loaded into the transfer chamber 201 which has been previously set in an atmosphere of an inert gas at atmospheric pressure. The vacuum suction is released and transferred onto 212.
Next, the gate valve G1 is closed. Rotary stage 2
12 is rotated to perform orientation flat (orientation flat) alignment and center alignment. Next, the wafer W is vacuum-sucked on the arm of the transfer unit 211 again by the transfer unit 211. Next, the inside of the transfer chamber 201 is depressurized to a predetermined degree of vacuum by an exhaust unit (not shown).

Next, the gate valve G5 is opened. Next, the transfer means 211 carries the wafer W into the chamber 101 of the vacuum processing unit 1A in which the pressure has been reduced to a predetermined degree of vacuum by an exhaust means (not shown), and mounts the wafer W in the wafer holding groove of the susceptor 111. . Next, the gate valve G
5 is closed. Next, the rotating unit 1 is driven by the driving unit 144.
The rotating member 21 is rotated at a rotating speed that hardly causes temperature unevenness in the object to be processed, for example, 5 to 10 rpm. In addition, the power supply terminal 124 a and the slip ring 124
, Power is supplied to the heating source 127 with a predetermined value, for example, the maximum value of 0.5 to 1 kW for the auxiliary heating source 127X, and the maximum value of 10 to 25 kW for the other heating sources. The susceptor 111 is heated by irradiating the energy from the rotating heating means 126 to the susceptor 111 through the transmission window 112. This susceptor 11
The wafer W is processed at a processing temperature by heat transfer from
For example, the temperature is uniformly raised in the wafer plane to 500 to 700 ° C. Details of the operation of the heating means 126 will be described later.

Next, a processing gas is introduced from the processing gas supply port 115 by gas supply means (not shown). The three perforated plates 117A, 117B, 117C
Is supplied in the form of a shower near the processing surface of the wafer W. Using this processing gas as a raw material, a film is formed on the processing surface of the wafer W by the CVD method. In this film forming process, the pressure in the chamber 101 is maintained at a predetermined value, for example, 5 to 20 Torr. Also,
In order to maintain the wafer W at the processing temperature, feedback control is performed on the heating unit 125 by a control unit, for example, a computer, based on the output from the thermocouple 113.

In the lamp heating described above, cooling air supply means (not shown) supplies cooling air inlet 13
Cooling air, for example, nitrogen gas, through the heating means chamber 1
02. By this cooling air, the heating means 12
6 and the transmission window 112 are prevented from overheating. In the above-described film forming process, an inert gas supply unit (not shown) supplies an inert gas through an inert gas supply port 119.
For example, nitrogen gas is supplied to a space surrounded by the susceptor 111 and the transmission window 112. The nitrogen gas passes through the gas holes of the buffer plate 120, is uniformly supplied near the lower surface of the susceptor 111, passes through the gap of the susceptor 111, and flows into the processing space. This nitrogen gas prevents the processing gas from flowing from the gap of the susceptor 111 to the lower surface side of the susceptor, and prevents the processing gas from being supplied to the vicinity of the upper surface of the transmission window 112 to form a film on the transmission window 112. To prevent. Since the buffer plate 120 uniformly supplies the nitrogen gas to the vicinity of the lower surface of the susceptor 111, the effect of preventing the inflow of the processing gas described above is uniformly applied to the entire gap of the susceptor. Further, since the heat transfer between the susceptor 111 and the nitrogen gas is performed uniformly, the nitrogen gas does not impair the in-plane uniformity of the temperature of the wafer W.

After the above-described film formation has been performed for a predetermined time, the supply of the processing gas and the power supply to the heating means 126 are stopped. The residual processing gas in the chamber 101 is exhausted, and the pressure in the chamber is set to a slightly lower pressure than in the transfer chamber 201.
By the selection of the pressure, even when the reaction product or the residual processing gas is floating in the chamber 101, it is possible to prevent the reaction product and the residual processing gas from scattering into the transfer chamber and prevent the transfer chamber from being contaminated. Next, the gate valve G5 is opened again. Next, the transfer means 211 transfers the wafer W on which the film formation process has been completed to the transfer chamber 201 in which the pressure has been reduced to a predetermined degree of vacuum in advance.
Take out inside. Next, the gate valve G5 is closed.
Next, an inert gas is introduced into the transfer chamber 201 by an inert gas supply unit (not shown), and the inside of the transfer chamber 201 is made an inert gas atmosphere at atmospheric pressure.

Next, the gate valve G2 is opened. Then, the transfer means 211 carries the wafer W into the second cassette chamber 202B which has been brought into an inert gas atmosphere at atmospheric pressure in advance.

Next, the operation of the heating means 126 of the lamp heating type CVD apparatus which operates as described above will be described in detail. The heating means 126 includes the heating source groups 127A, 127B, and 127C as described above. Heating source group 12
One of the heating sources in 7A is the auxiliary heating source 127X. First, the operation of the heating source groups 127A, 127B, 127C will be described. In lamp heating, each heating source group 127A, 127B, 1
27C, as shown in FIG. 4, the annular heating areas I, I
I and III are formed respectively. Heating source group 127A, 1
By independently controlling the outputs of 27B and 127C,
The heating amount for the heating regions I, II, and III on the wafer W is adjusted. Heat source group 127A, 127B, 127
As the output ratio of C, an optimum output ratio obtained in advance using a sample wafer is selected according to the processing conditions. As a result, the temperature uniformity between the heating regions I, II, and III, that is, the temperature uniformity in the radial direction of the wafer W is improved.

However, the wafer W and the susceptor 111
Due to the effects of contact with the wafer W, cooling air introduced into the energy ray generating chamber 102, and the asymmetry of the shape and material of the processing chamber 301, the heat absorption and heat radiation conditions of the wafer W are not constant, Temperature unevenness may occur in the heating regions I, II, and III, that is, in the circumferential direction of the wafer W.

Next, the operation of the auxiliary heating source 127X will be described. As shown in FIGS. 5A and 5B, in the heating region I, there is a temperature unevenness region I ′ having a temperature different from that of the region I ″ other than the temperature unevenness region. When the temperature unevenness occurs in the area, the auxiliary heating source 127 </ b> X rotates the area other than the temperature unevenness area according to the temperature difference between the temperature unevenness area I ′ and the area I ″ other than the temperature unevenness area in its rotation operation. By heating the temperature unevenness region I ′ with an output different from the output for I ″, the temperature uniformity in the heating region I is improved, and the temperature uniformity of the wafer W is improved. For example, FIG. When the temperature unevenness region I ′ is lower in temperature than the region I ″ other than the temperature unevenness region, as shown in FIG.
The output of the auxiliary heating source 127X is controlled so that the temperature unevenness region I 'is heated with an output larger than the output for the region I "other than the temperature unevenness region. When the temperature is higher than the area I ″ other than the non-uniform area, the auxiliary heating source 127X outputs a smaller output than the output of the area I ″ other than the non-uniform temperature area, and the output from the temperature non-uniform area I ′ is smaller. Perform heating.

The output of the auxiliary heating source 127X is controlled by control means, for example, a computer as follows. By the output from the encoder 125, the auxiliary heating source 127X
Is detected on the rotation trajectory. This auxiliary heating source 1
A period during which the auxiliary heating source 127X passes through the heating position of the temperature unevenness region I 'on the rotation trajectory based on the position detection of the temperature unevenness region 27' and the position of the temperature unevenness region I 'previously obtained using the sample wafer. Is detected. In this period, the auxiliary heating source 127X is set to have an output different from the output for the region I ″ other than the temperature unevenness region according to the temperature difference between the temperature unevenness region I ′ and the region I ″ other than the temperature unevenness region.
Control the output of In the control, in consideration of the delay of the response of the lamp output to the control signal from the control means, the timing at which the control signal is transmitted is determined by the timing at which the auxiliary heating source 127X passes through the heating position of the temperature unevenness region I 'in the rotation orbit. To shift. This shift amount is
Using the sample wafer, an optimum value for achieving the temperature uniformity of the wafer W is obtained in advance and set to that value. As an output control pattern of the auxiliary heating source 127X, an optimal pattern for achieving temperature uniformity is obtained in advance using a sample wafer, and set to that pattern.

As described above, in the lamp heating type CVD apparatus according to one embodiment of the present invention, each heating source group 12
By independently controlling the outputs of 7A, 127B, and 127C, the heating amounts for the heating regions I, II, and III are adjusted, and the temperature uniformity of the wafer W in the radial direction is improved.
Further, by performing the heating by the auxiliary heating source 127X described above, the uniformity of the temperature of the wafer W in the circumferential direction is improved. As a result, the temperature uniformity over the entire surface of the wafer W is improved.

In this embodiment, one lamp is used as the auxiliary heating source, but the number of lamps is not limited to this, and a plurality of lamps may be used as the auxiliary heating source. Further, in the present embodiment, heating means 126 is constituted by auxiliary heating source 127X and other heating sources, but heating means 126 is provided by auxiliary heating source 12X.
It may be composed of only 7X. Further, in the present embodiment, the position of the temperature unevenness region is preset before processing using a sample wafer, but multipoint measurement of the wafer temperature using a plurality of temperature sensors or using a thermoviewer is used. The apparatus may be configured to set the temperature unevenness area during processing by measuring the temperature distribution in the wafer surface.

Further, in the present embodiment, the object to be processed, ie, the wafer W is fixed, and the heating means 126 is rotated by the rotation means 3, but the present invention is not limited to this. The heating means may be fixed, and the object to be processed may be rotated by the rotation means. Alternatively, both the heating means and the object to be processed may be relatively rotated by the rotation means. Further, in the present embodiment, a disc-shaped susceptor of a type that supports the entire surface of the wafer is used as the supporting means, but the type of the supporting means is not limited to this, and only the peripheral portion of the wafer is supported. It may be a supporting means of a type that performs the following. The present invention also provides a lamp heating type CVD.
It is not limited to the device, but may be a semiconductor wafer or LCD.
As long as the apparatus heats an object to be processed such as a substrate, the apparatus can be applied to a sputtering apparatus, a laser annealing apparatus, and the like.

[0042]

According to the heating apparatus, the processing apparatus, the heating method and the processing method according to the present invention, the temperature uniformity of the object to be heated and the object to be processed in the circumferential direction is improved. As a result, the yield of products can be improved.

[Brief description of the drawings]

FIG. 1 is a plan view showing an entire embodiment of the present invention.

FIG. 2 is a longitudinal sectional view illustrating a processing unit according to an embodiment of the present invention.

FIG. 3 is a transverse sectional view taken along line AA of FIG. 2;

FIG. 4 is an explanatory diagram showing a heating region of a wafer in one embodiment of the present invention.

FIG. 5 is an explanatory diagram showing heating of a temperature unevenness region in one embodiment of the present invention.

FIG. 6 is a longitudinal sectional view of a conventional energy ray heating type processing apparatus.

FIG. 7 is an explanatory view showing a heated region of a wafer in the apparatus of FIG. 6;

[Explanation of symbols]

 101 Processing container (chamber) 111 Susceptor (supporting means) 126 Heating means 127A to 127C Heating source 128 Halogen lamp 145 Rotating means I 'Temperature unevenness area I "Area other than temperature unevenness area W Semiconductor wafer (processed object, heated object) body)

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁶ Identification code FI H01L 21/3065 H01L 21/31 B 21/31 21/302 B

Claims (6)

[Claims] 1. A heating means, a supporting means for supporting a body to be heated such that the body to be heated is arranged at a position heated by the heating means, and the heating means and the body to be heated are relatively rotated. A heating device, wherein the heating device compensates for temperature unevenness generated in a circumferential direction of the object to be heated. 2. A heating means, a support means for supporting the object to be heated such that the object to be heated is arranged at a position heated by the heating means, and the heating means and the object to be heated are relatively rotated. Rotating means, at least one of the heating means, in the relative rotating operation of the heating means and the object to be heated, for the temperature unevenness region of the object to be heated and other regions, respectively, A heating device characterized by heating with different outputs. 3. A processing chamber, supporting means for supporting a processing object at a processing position in the processing chamber, processing gas supply means for supplying a processing gas to the processing position, and a heating means for heating the processing object. Heating means, and a rotating means for relatively rotating the object and the heating means, wherein at least one of the heating means has a relative position between the heating means and the object. A processing apparatus for heating a non-uniform temperature region and another region of an object to be processed with different outputs in a simple rotation operation. 4. A step of heating a body to be heated, a step of relatively rotating the body to be heated and a heating means, and a step of compensating for temperature unevenness occurring in a circumferential direction of the body to be heated. A heating method, comprising: 5. When heating the object to be heated while relatively rotating the heating means and the object to be heated, at least one of the heating means heats an area other than the temperature unevenness area in the object to be heated. Heating the output of at least one of the heating means as a predetermined value when in the position;
Heating at least one output of the heating means as a value different from the predetermined value when at least one of the heating means is at a heating position of a temperature unevenness region in the object to be heated; A heating method comprising: 6. When performing predetermined processing on the object to be processed while relatively rotating the heating means and the object to be processed, at least one of the heating means includes a part other than the temperature unevenness region in the object to be processed. Heating the output of at least one of the heating means as a predetermined value when at the heating position of the region; and heating at least one of the heating means to the heating position of the temperature unevenness region in the object to be processed. And heating the output of at least one of the heating means to a value different from the predetermined value when the condition is satisfied.