JPH0323629A - Manufacture apparatus for semiconductor element - Google Patents

Abstract

PURPOSE:To mass-produce high-quality semiconductor element by a method wherein a heat-treated wafer is heated from its rear side. CONSTITUTION:The whole rear of a wafer 3 is heated by using a tungsten lamp 10; a lack of uniformity of a temperature distribution inside its face caused by heat generated by a tungsten lamp 9 is corrected. Thereby, a stable temperature distribution of the wafer can be obtained; high-quality semiconductor elements without causing a slip line can be mass-produced when this apparatus is used for a lamp annealing apparatus or a lamp oxidation apparatus.

Description

[Detailed description of the invention]

[Industrial Application Field] The present invention relates to a lamp heating device used in semiconductor device manufacturing equipment, particularly in lamp annealing and lamp oxidation equipment.

[Prior Art J] In a semiconductor device manufacturing process, a lamp heating device is used for activating a thin diffusion layer, forming a thin insulating film, and the like. Wafers subjected to lamp heat treatment have the drawback of crystal dislocation and slip lines. This slip line occurs because the temperature within the wafer surface (particularly the temperature at the edge of the wafer) becomes non-uniform when a rapid heat treatment process is performed. It is known that in order to solve slippage, it is sufficient to make the temperature of the wafer uniform. Therefore, Reduced Thermal Processing (Reduced Thermal Processing)
stng for tJLs1) C, Il in 1989
Ill et al. surrounded a silicon wafer with a silicon guard ring, optically extended the wafer edge,
Attempts to make slip lines difficult to enter have been reported. [Problems to be Solved by the Invention] However, in this method, the distance between the guard ring and the wafer must be adjusted depending on the processing conditions. In addition, the guard ring deteriorates with use, and the way radiant heat is emitted changes, leaving problems with mass production. An object of the present invention is to provide an apparatus that obtains a stable wafer temperature distribution using a lamp heater that equalizes the wafer temperature. [Means for Solving the Problems] In order to achieve the above object, the present invention provides a semiconductor device manufacturing apparatus equipped with a heat treatment lamp heater that heats a wafer from above, heating the wafer from the back side,
The present invention includes a correction lamp heater for correcting nonuniform temperature distribution that occurs within the surface of the wafer due to heating by the heat treatment lamp heater. Further, according to the present invention, by changing the setting position of the correction lamp heater from the wafer in accordance with the temperature distribution occurring within the wafer surface, uneven temperature distribution occurring within the wafer surface can be corrected. This is a correction. [Operation] Wafers subjected to lamp heat treatment have the disadvantage that crystals are dislocated and slip lines are likely to occur. This slip line occurs because the temperature within the wafer surface (particularly the temperature at the edge of the wafer) becomes non-uniform when a rapid heat treatment process is performed. In the method of the present invention, temperature non-uniformity within the wafer surface caused by heating with an upper lamp can be corrected by a heater source on the back surface of the wafer or in the surroundings, making it possible to equalize the temperature within the wafer surface. . This eliminates slippage on the wafer. Furthermore, by using a heater, there is almost no deterioration, unlike silicon guard rings. This makes it suitable for mass production. [Example] Examples of the present invention will be described below with reference to the drawings. In FIG. 1, 6 is a housing containing a water cooling chamber. A tungsten lamp 9 is attached to the upper opening of the housing 6 as a lamp heater for heat treatment, and the upper opening is covered with a lid plate 8 which also serves as a reflector. The interior of the casing 6 is divided into upper and lower sections by a quartz plate 2a serving as a quartz window for the tungsten lamp 9, with a heater chamber 1 in the upper chamber and a process chamber 5 in the lower chamber. A mirror 7 is installed on the inner wall of the heater chamber 1, and the direct light from the tungsten lamp 9 and the reflected light from the mirrors 7 on each surface are irradiated into the process chamber 5 through the quartz plate 2a. In the present invention, the interior of the process chamber 5 is divided into upper and lower parts by a quartz plate 2b serving as a quartz window, a wafer support bin 4 is provided on the quartz plate 2b, and a wafer supported on the support bin 4 is placed below the quartz plate 2b. A tungsten lamp 10 is installed as a correction lamp heater to heat the back side of the lamp. The embodiment shown in FIG. 2 shows an example in which correction tungsten lamps 1O are arranged in parallel over a certain range beyond the area of the wafer 3. FIG. 3 shows an example in which lamps of different sizes and diameters are arranged concentrically as tungsten lamps IO for heating the back surface of the wafer 3. The embodiments shown in FIGS. 2 and 3 are examples in which the entire back surface of the wafer 3 is heated almost uniformly by the tungsten lamp IO. The entire back surface of the wafer 3 is heated by the lower tungsten lamp 10, and the uneven temperature distribution within the surface of the wafer 3 caused by the heat generated by the upper tungsten lamp 9 is corrected. Incidentally, as described above, the reason why slip lines are likely to occur when the wafer 3 is subjected to lamp heat treatment is because the temperature in particular at the edge of the wafer is not uniform. Therefore, it is desirable to adjust the arrangement and heating position of the correction tungsten lamps 10 that heat the back surface of the wafer 3 in accordance with changes in the temperature distribution within the surface of the wafer 3. In the embodiment shown in FIG. 4, a combination of long and short tungsten lamps is used, and a part of the tungsten lamp IO that heats the central part of the wafer 3 from the back side is removed. Furthermore, the variation in the temperature distribution within the plane of the wafer 3 means, more specifically, that the temperature at the periphery is lower than that at the center. In the example shown in FIG. 5, correction tungsten lamps 1O are installed in a certain area around the periphery of the wafer 3 using a combination of long and short tungsten lamps. In the embodiments shown in FIGS. 4 and 5, the back surface of the wafer 3 is locally heated according to the temperature distribution, and the overall temperature distribution within the wafer surface can be corrected to a constant value. FIG. 6 shows an example in which correction tungsten lamps IO for heating the back surface of the wafer 3 are arranged at different distances from the back surface of the wafer 3. In this embodiment, a concave surface rising from the center to the periphery is formed on the bottom surface of the housing below the quartz plate 2b, corresponding to the installation position of the wafer 3, and the tungsten lamps 1O are arranged in parallel along the concave surface. It shows. Therefore, in this embodiment, the distance between the tungsten lamp 10 and the wafer 3 is different between the center and the periphery, and therefore the radiant heat is different between the center and the periphery of the wafer 3. In contrast, the wafer 3 is heated to a high temperature, and overall temperature non-uniformity within the surface of the wafer 3 during lamp processing is improved. In each of the above embodiments, the tungsten lamps are arranged in parallel or concentrically, but the arrangement is not limited to this, and it is of course possible to use a combination of parallel or intersecting arrangements. Effects of the Invention As described above, according to the present invention, a stable temperature distribution of the wafer can be obtained by heating a wafer that has been subjected to lamp heat treatment from the back side, and as a result, it can be used in a lamp annealing and lamp oxidation device to prevent slippage. This has the effect of mass producing high-quality semiconductor devices without the need for lines.

[Brief explanation of drawings]

FIG. 1 is a sectional view showing an embodiment of the apparatus of the present invention, FIGS. 2 to 5 are planar views showing the relationship between a wafer and a tungsten lamp, respectively, and FIG. FIG. 7 is a sectional view of an apparatus showing another embodiment. l... Heater chamber 2a, 2b... Quartz plate 3... Wafer 4... Wafer support bin 5... Process chamber 6... Housing 7...
・Mirror 8...Lid plate 9...Tungsten lamp for heat treatment! 0... Tungsten lamp for correction

Claims (2)

[Claims] (1) In a semiconductor device manufacturing apparatus equipped with a lamp heater for heat treatment that heats a wafer from above, the wafer is heated from the back side, and a phenomenon occurs within the plane of the wafer due to the heating of the lamp heater for heat treatment. A semiconductor device manufacturing apparatus characterized by having a correction lamp heater for correcting non-uniform temperature distribution. (2) The semiconductor device manufacturing apparatus according to claim 1, wherein the setting position of the correction lamp heater is varied in distance from the wafer in accordance with the temperature distribution occurring within the plane of the wafer.