CN116453985B - Quick heating device for semiconductor equipment - Google Patents
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- CN116453985B CN116453985B CN202310727122.XA CN202310727122A CN116453985B CN 116453985 B CN116453985 B CN 116453985B CN 202310727122 A CN202310727122 A CN 202310727122A CN 116453985 B CN116453985 B CN 116453985B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 113
- 238000010438 heat treatment Methods 0.000 title claims abstract description 51
- 238000007789 sealing Methods 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 13
- 238000001816 cooling Methods 0.000 claims description 9
- 235000012431 wafers Nutrition 0.000 abstract description 78
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 238000000034 method Methods 0.000 abstract description 10
- 230000008569 process Effects 0.000 abstract description 10
- 230000009286 beneficial effect Effects 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 6
- 238000012423 maintenance Methods 0.000 abstract description 5
- 238000012545 processing Methods 0.000 abstract description 5
- 230000008901 benefit Effects 0.000 abstract description 4
- 230000002860 competitive effect Effects 0.000 abstract description 3
- 238000003466 welding Methods 0.000 abstract description 3
- 230000005855 radiation Effects 0.000 description 6
- 239000002826 coolant Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000004308 accommodation Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
The invention provides a rapid heating device for semiconductor equipment, which belongs to the technical field of semiconductor equipment and heats wafers in the semiconductor equipment through lamps; the rapid heating device for the semiconductor equipment comprises a middle lamp box and an edge lamp box arranged on the periphery of the middle lamp box, wherein a plurality of middle lamps are arranged in the middle lamp box, and a plurality of edge lamps are arranged in the edge lamp box; the vertical distance between the edge lamp and the plane of the wafer is smaller than the vertical distance between the middle lamp and the plane of the wafer. The invention solves the problem of difficult manufacture of the existing integral lamp box, reduces the process risks of lamp box processing and welding, reduces the number of heating lamps under the condition of ensuring that the wafer heating temperature and the heating effect uniformity are basically unchanged, is beneficial to reducing the equipment manufacturing and maintenance cost, is more beneficial to optimizing and reducing the occupied space of a cavity and a machine and improves the competitive advantage of the machine.
Description
Technical Field
The invention belongs to the technical field of semiconductor equipment, and particularly relates to a rapid heating device for semiconductor equipment.
Background
Currently, in semiconductor devices, some processes require rapid heating of wafers (wafer), for example, for Rapid Thermal Processing (RTP) processes, often hundreds or even thousands of lamps arranged in an array of lamp boxes. The prior art heating device, such as the structure shown in the chinese patent application publication No. CN1645575a, is also shown in fig. 2 of the present specification, and the existing lamp a, which is generally cylindrical, is uniformly arranged side by side in a honeycomb-like manner in the lamp box.
The lamp box of the heating device commonly used at present is of an integral structure, and if a certain position inside the lamp box is defective or problematic in the working process due to the manufacturing or using aspects, the whole lamp box can be scrapped or disabled. In addition, the surface of the lamp box facing the wafer is a plane, and the lamp is placed in the lamp box in a direction perpendicular to the wafer, so that the coverage of the lamp is usually larger than that of the wafer in order to achieve the temperature consistency between the edge of the wafer and other parts. Therefore, the existing integral lamp box has the defects of more lamps, difficult manufacture, inconvenient maintenance or incapability of maintenance at all, large occupied space and larger occupied area of a semiconductor equipment chamber and a machine.
Disclosure of Invention
Based on the technical problems existing in the prior art, the invention provides a rapid heating device for semiconductor equipment, which solves the problems that the existing heating device lamp box is difficult to manufacture and maintain and occupies large space, and simultaneously ensures that the heating temperature and uniformity of wafers are not reduced.
According to the technical scheme, the invention provides a rapid heating device for semiconductor equipment, which heats wafers in the semiconductor equipment through lamps, and comprises a middle lamp box and edge lamp boxes arranged on the periphery of the middle lamp box, wherein a plurality of middle lamps are arranged in the middle lamp box, and a plurality of edge lamps are arranged in the edge lamp boxes; the vertical distance between the edge lamp and the plane of the wafer in the semiconductor device is smaller than the vertical distance between the middle lamp and the plane of the wafer in the semiconductor device; the vertical distance between the edge lamp which is more outside and the plane of the wafer in the semiconductor device is smaller; the middle lamp box is opposite to the wafer in the semiconductor device, and the coverage range of the middle lamp is matched with the wafer in the semiconductor device; the middle lamp is oriented perpendicular to the wafer in the semiconductor device; the edge lamps are oriented obliquely toward the edge of the wafer in the semiconductor device.
Further, the middle lamp box and the edge lamp box are provided with sealing plates at one side face facing the wafer in the semiconductor device; the middle part of the sealing plate corresponds to the middle lamp box, is in fit sealing connection, and is parallel to the wafer in the semiconductor device. The edge part of the sealing plate is corresponding to the edge lamp box, is in fit sealing connection, and is inclined to the wafer in the semiconductor equipment.
Preferably, the middle lamp box is provided with a first lap joint part in a protruding mode on the outward side face, the edge lamp box is provided with a second lap joint part in a protruding mode on the inward side face, and the middle lamp box and the edge lamp box are in lap joint sealing connection through the first lap joint part and the second lap joint part in a matched mode.
Preferably, the middle lamp box is provided with a plurality of middle lamp accommodating holes, and the middle lamps are positioned in the middle lamp accommodating holes in a one-to-one correspondence manner. The middle lamp box is provided with a middle lamp holder substrate at one side of the middle lamp box, which is opposite to the wafer in the semiconductor device, and the middle lamp is connected with the middle lamp holder substrate. A plurality of edge lamp accommodating holes are formed in the edge lamp box, and the edge lamps are correspondingly positioned in the edge lamp accommodating holes one by one; the edge lamp box is provided with an edge lamp holder substrate on one side of the wafer facing away from the semiconductor device, and the edge lamp is connected with the edge lamp holder substrate.
Preferably, cooling channels are arranged between the middle lamps in the middle lamp box and between the edge lamps in the edge lamp box.
Preferably, the middle light box and the edge light box are two independent light boxes; the edge lamp box is annular and sleeved outside the middle lamp box.
Further, the semiconductor device is provided with a chamber, a supporting ring is rotatably connected in the chamber through a rotor, and a wafer in the semiconductor device is supported on the supporting ring through an edge ring; the chamber is also provided with an air inlet channel and an air outlet channel at positions above the wafer in the semiconductor device; the rapid heating device for the semiconductor equipment is positioned above the chamber, and the sealing plate is connected with the side wall of the chamber in a sealing way and forms the top of the chamber.
Compared with the prior art, the invention has the following beneficial technical effects:
1. the rapid heating device adopts a split structure with the middle lamp and the edge lamp which are mutually independent, solves the problem that the existing integral lamp box is difficult to manufacture, and reduces the technological risks of lamp box processing and welding.
2. According to the rapid heating device, the edge lamps are closer to the wafer in the semiconductor equipment, so that the number of the heating lamps is reduced under the condition that the heating temperature and the uniformity of the heating effect of the wafer in the semiconductor equipment are basically unchanged, and the manufacturing and maintenance cost of the equipment is reduced.
3. The rapid heating device provided by the invention occupies smaller space, is beneficial to optimally reducing the occupied space of the chamber and the machine and improving the competitive advantage of the machine.
Drawings
FIG. 1 is a schematic diagram of an embodiment of the present invention.
Fig. 2 is a schematic diagram of a conventional heating apparatus for a semiconductor device.
Reference numerals in the drawings illustrate:
1. a middle lamp box;
2. an edge light box;
3. an intermediate luminaire;
4. edge lamps;
5. a sealing plate;
6. a first lap joint;
7. a second lap joint;
8. a middle lamp accommodating hole;
9. an intermediate lamp holder base plate;
10. an edge light fitting accommodation hole;
11. an edge socket substrate;
12. a cooling channel;
13. a chamber;
14. a rotor;
15. a support ring;
16. an edge ring;
17. an air intake passage;
18. an air outlet channel;
w, wafers in semiconductor devices;
A. an existing lamp.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that, for convenience of description, only the portions related to the present invention are shown in the drawings. Embodiments of the invention and features of the embodiments may be combined with each other without conflict.
It should be noted that the terms "first," "second," and the like herein are merely used for distinguishing between different devices, modules, or units and not for limiting the order or interdependence of the functions performed by such devices, modules, or units.
It should be noted that references to "one", "a plurality" and "a plurality" in this disclosure are intended to be illustrative rather than limiting, and those skilled in the art will appreciate that "one or more" is intended to be construed as "one or more" unless the context clearly indicates otherwise.
The invention relates to a rapid heating device for semiconductor equipment, which belongs to the technical field of semiconductor equipment, and heats wafers in the semiconductor equipment through lamps, and comprises a middle lamp box and edge lamp boxes arranged on the periphery of the middle lamp box, wherein a plurality of middle lamps are arranged in the middle lamp box, and a plurality of edge lamps are arranged in the edge lamp boxes; the vertical distance between the edge lamp and the plane of the wafer in the semiconductor device is smaller than the vertical distance between the middle lamp and the plane of the wafer in the semiconductor device. The invention solves the problem of difficult manufacture of the existing integral lamp box, reduces the process risks of lamp box processing and welding, reduces the number of heating lamps under the condition of ensuring that the wafer heating temperature and the heating effect uniformity in the semiconductor equipment are basically unchanged, is beneficial to reducing the equipment manufacturing and maintenance cost, and is more beneficial to optimizing and reducing the occupied space of a cavity and a machine.
The invention provides a rapid heating device for semiconductor equipment, which heats wafers in the semiconductor equipment through lamps, and comprises a middle lamp box and edge lamp boxes arranged on the periphery of the middle lamp box, wherein a plurality of middle lamps are arranged in the middle lamp box, and a plurality of edge lamps are arranged in the edge lamp box; the vertical distance between the edge lamp and the plane of the wafer in the semiconductor device is smaller than the vertical distance between the middle lamp and the plane of the wafer in the semiconductor device; the vertical distance between the edge lamp which is more outside and the plane of the wafer in the semiconductor device is smaller; the middle lamp box is opposite to the wafer in the semiconductor device, and the coverage range of the middle lamp is matched with the wafer in the semiconductor device; the middle lamp is oriented perpendicular to the wafer in the semiconductor device; the edge lamps are oriented obliquely toward the edge of the wafer in the semiconductor device.
Further, the middle lamp box and the edge lamp box are provided with sealing plates at one side face facing the wafer in the semiconductor device; the middle part of the sealing plate corresponds to the middle lamp box, is in fit sealing connection, and is parallel to the wafer in the semiconductor device. The edge part of the sealing plate is corresponding to the edge lamp box, is in fit sealing connection, and is inclined to the wafer in the semiconductor equipment.
Preferably, the middle lamp box is provided with a first lap joint part in a protruding mode on the outward side face, the edge lamp box is provided with a second lap joint part in a protruding mode on the inward side face, and the middle lamp box and the edge lamp box are in lap joint sealing connection through the first lap joint part and the second lap joint part in a matched mode.
Preferably, the middle lamp box is provided with a plurality of middle lamp accommodating holes, and the middle lamps are positioned in the middle lamp accommodating holes in a one-to-one correspondence manner. The middle lamp box is provided with a middle lamp holder substrate at one side of the middle lamp box, which is opposite to the wafer in the semiconductor device, and the middle lamp is connected with the middle lamp holder substrate. A plurality of edge lamp accommodating holes are formed in the edge lamp box, and the edge lamps are correspondingly positioned in the edge lamp accommodating holes one by one; the edge lamp box is provided with an edge lamp holder substrate on one side of the wafer facing away from the semiconductor device, and the edge lamp is connected with the edge lamp holder substrate.
Preferably, cooling channels are arranged between the middle lamps in the middle lamp box and between the edge lamps in the edge lamp box.
Preferably, the middle light box and the edge light box are two independent light boxes; the edge lamp box is annular and sleeved outside the middle lamp box.
Further, the semiconductor device is provided with a chamber, a supporting ring is rotatably connected in the chamber through a rotor, and a wafer in the semiconductor device is supported on the supporting ring through an edge ring; the chamber is also provided with an air inlet channel and an air outlet channel at positions above the wafer in the semiconductor device; the rapid heating device for the semiconductor equipment is positioned above the chamber, and the sealing plate is connected with the side wall of the chamber in a sealing way and forms the top of the chamber.
The rapid heating apparatus for semiconductor devices according to the present invention will be described in detail with reference to the accompanying drawings.
Referring to fig. 2, in a conventional semiconductor device, a lamp box is disposed above a device chamber, and the conventional lamp box is, for example, cylindrical, has a planar lower end surface, and is disposed in a honeycomb-like manner in the lamp box. The area covered by the existing lamp A is larger than the wafer W, so that the thermal radiation intensity of the edge position and the center position of the wafer W in the semiconductor equipment is basically consistent, otherwise, the heating is uneven, and the process treatment effect is poor. However, the lamp is more in number, large in occupied area, difficult to manufacture and maintain in a large-area lamp box and high in overall cost due to the adoption of the structure. From the point of view, the invention designs a set of split type rapid heating device, which is helpful for solving the problems faced by the prior art scheme and improving the competitive advantage of the machine.
Referring to fig. 1, a rapid heating device for a semiconductor device according to an embodiment of the present invention, similar to the prior art, heats a wafer W in the semiconductor device by using a lamp, and one of the main improvements is that the rapid heating device comprises a middle lamp box 1 and an edge lamp box 2 arranged at the periphery of the middle lamp box 1, wherein a plurality of middle lamps 3 are uniformly distributed in the middle lamp box 1, and a plurality of edge lamps 4 are uniformly distributed in the edge lamp box 2; the vertical distance between the edge lamp 4 and the plane of the wafer W in the semiconductor device is smaller than the vertical distance between the middle lamp 3 and the plane of the wafer W in the semiconductor device.
The improved technical principle can be understood that on the basis of the existing structure, on the premise of ensuring that the space right above the wafer W in the semiconductor device is unchanged, the distance between the lamp heating wire above the side of the wafer W in the semiconductor device and the wafer W in the semiconductor device is shortened; according to the heat radiation law, the heat radiation intensity is inversely proportional to the twice of the radiation distance, so that shortening the radiation distance between the lamp and the wafer W in the semiconductor device can improve the heat radiation intensity of the wafer W surface in the semiconductor device, namely the heating temperature of the wafer W surface in the semiconductor device, so that fewer lamps can be adopted at the edge position of the wafer W in the semiconductor device, and the basically same heating effect can be realized. Therefore, under the condition of keeping the existing heating requirement of the wafer W in the semiconductor equipment, the invention can reduce the number of the outer lamps, reduce the area of the lamp box, reduce the area of the chamber with the section of the wafer W in the semiconductor equipment, reduce the volume of the chamber and reduce the occupied space of the machine. In addition, compared with an integral lamp box, the split lamp box can remarkably reduce processing and manufacturing difficulties, and is convenient to maintain and replace.
In the preferred embodiment, the further the outer edge lamps 4 are, the smaller the vertical distance from the plane of the wafer W in the semiconductor device, for example, the edge lamps 4 are arranged on a slope. The middle lamp box 1 faces the wafer W in the semiconductor device, and the coverage range of the middle lamp 3 is matched with the wafer W in the semiconductor device. The middle lamp 3 is oriented perpendicular to the wafer W in the semiconductor device; the edge lamps 4 are oriented non-perpendicularly to the wafer W in the semiconductor device and are inclined inwardly towards the edge of the wafer W in the semiconductor device.
More specifically, the middle lamp box 1 is provided with a plurality of middle lamp accommodating holes 8, and the middle lamps 3 are positioned in the middle lamp accommodating holes 8 in a one-to-one correspondence manner. The intermediate lamp box 1 is provided with an intermediate lamp base plate 9 on a side facing away from the wafer W in the semiconductor device, and the intermediate lamp 3 is connected to the intermediate lamp base plate 9. A plurality of edge lamp accommodating holes 10 are formed in the edge lamp box 2, and the edge lamps 4 are correspondingly positioned in the edge lamp accommodating holes 10 one by one. The edge light box 2 is provided with an edge light socket substrate 11 on the side facing away from the wafer W in the semiconductor device, and the edge light 4 is connected to the edge light socket substrate 11. The intermediate base plate 9 and the edge base plate 11 are independent of each other. Cooling channels 12 are arranged between the middle lamp accommodating holes 8 of the middle lamp 3 in the middle lamp box 1 and between the edge lamp accommodating holes 10 of the edge lamp 4 in the edge lamp box 2, and are used for protecting the lamps and prolonging the service lives of the lamps. The cooling channel 12 is provided with an input port and an output port, and is filled with coolant (such as cooling water) to cool the lamps in an independent lamp box; or the cooling channels 12 are connected to form a cooling network, and the coolant is cooled in the middle lamp box 1 and the edge lamp box 2 in a whole flowing way.
The intermediate lamp box 1 and the edge lamp box 2 are provided with sealing plates 5 at a side facing the wafer W in the semiconductor device. The middle part of the sealing plate 5 is in corresponding and attached sealing connection with the middle lamp box 1 and is parallel to the wafer W in the semiconductor equipment; the edge portion of the sealing plate 5 is hermetically connected in correspondence with the edge light box 2 in a bonding manner and is inclined to the wafer W in the semiconductor device. The whole sealing plate 5 is in the shape of an upward raised round table or prismatic table, and the middle part is flat and the periphery is inclined to match with the end surfaces of the middle lamp box 1 and the edge lamp box 2. The sealing plate 5 serves to seal the lamp housing, to block the lamp, the circuit and the cooling channel 12 from the chamber 13 of the semiconductor device, to improve the uniformity of heating, etc.
Preferably, the middle light box 1 and the edge light box 2 are two light boxes independent of each other, the middle light box 1 is cylindrical as a whole, the edge light box 2 is annular as a whole, the lower end face is an inclined plane (conical table surface), and the middle light box 1 is sleeved with the lower end face, so that the split type structure is convenient to produce and maintain, and meanwhile, the split type structure is convenient to install. It is conceivable, for example, that in an alternative embodiment, the edge light boxes 2 are in a plurality of blocks, and the plurality of edge light boxes 2 are spliced together to form the ring shape; in still another embodiment, the edge light box 2 is a plurality of thin annular shapes, which are sleeved in turn from inside to outside, and the lower end face is a plane or an inclined plane as the height of the lower end face is lower, and the edge light 4 is vertically or obliquely arranged; or, in yet another embodiment, the middle light box 1 is formed by splicing a plurality of light boxes; etc., and other similar structures are possible.
The middle lamp box 1 is provided with a first lap joint part 6 in a protruding mode on the outward side face, the edge lamp box 2 is provided with a second lap joint part 7 in a protruding mode on the inward side face, and the middle lamp box 1 and the edge lamp box 2 are in lap joint sealing connection in a matched mode through the first lap joint part 6 and the second lap joint part 7. Preferably, the opposite surfaces of the first lap joint part 6 and/or the second lap joint part 7 are provided with seal ring grooves which are integrally annular (corresponding to the case of a lamp box, are complete annular or have discontinuous annular), O-shaped seal rings are embedded in the seal ring grooves, and the O-shaped seal rings are sleeved outside the middle lamp box 1; a plurality of mutually communicated bolt connecting holes are uniformly formed in the first lap joint part 6 and the second lap joint part 7 in the circumferential direction, and connecting bolts are penetrated into the connecting holes; therefore, the first lap joint part 6 and the second lap joint part 7 are clamped and fixed from the upper side and the lower side, and the O-shaped sealing ring is tightly arranged between the two lap joint parts, so that a stable sealing connection structure is formed.
The semiconductor device such as RTP heating device is provided with a chamber 13 which can be vacuumized, a supporting ring 15 is rotatably connected in the chamber 13 through a rotor 14, a wafer W in the semiconductor device is supported to a proper process position on the supporting ring 15 through an edge ring 16, the rotor 14 drives the supporting ring 15 to rotate together with the wafer W in the semiconductor device, and the temperature uniformity of heating the wafer W in the semiconductor device by the lamp is improved. The chamber 13 is further provided with an inlet channel 17 and an outlet channel 18 at a position above the wafer W in the semiconductor device, and the process gas enters the chamber 13 through the inlet channel 17, so as to provide the wafer W in the semiconductor device with the process gas with a proper flow and pressure, and flows out of the outlet channel 18 after the process reaction in the chamber 13. The rapid heating device of the present invention is located above the chamber 13, and the sealing plate 5 is hermetically connected to the side wall of the chamber 13 and forms the top of the chamber 13.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (7)
1. The rapid heating device for the semiconductor equipment is used for heating a wafer (W) in the semiconductor equipment through a lamp and is characterized by comprising an intermediate lamp box (1) and an edge lamp box (2) arranged on the periphery of the intermediate lamp box (1), wherein a plurality of intermediate lamps (3) are arranged in the intermediate lamp box (1), and a plurality of edge lamps (4) are arranged in the edge lamp box (2); the vertical distance between the edge lamp (4) and the plane of the wafer (W) is smaller than the vertical distance between the middle lamp (3) and the plane of the wafer (W);
the vertical distance between the edge lamp (4) which is more outside and the plane of the wafer (W) in the semiconductor equipment is smaller; the middle lamp box (1) is opposite to the wafer (W) in the semiconductor equipment, and the coverage range of the middle lamp (3) is matched with the wafer (W) in the semiconductor equipment; the middle lamp (3) is oriented perpendicular to the wafer (W) in the semiconductor device; the edge lamps (4) are oriented obliquely towards the edge of the wafer (W) in the semiconductor device;
the middle lamp box (1) and the edge lamp box (2) are two mutually independent lamp boxes; the edge lamp box (2) is annular and sleeved outside the middle lamp box (1); the middle lamp box (1) is provided with a first lap joint part (6) in a protruding mode on the outward side face, and the edge lamp box (2) is provided with a second lap joint part (7) in a protruding mode on the inward side face;
the opposite surfaces of the first lap joint part (6) and/or the second lap joint part (7) are provided with a sealing ring groove which is integrally annular, an O-shaped sealing ring is embedded in the sealing ring groove, and the O-shaped sealing ring is sleeved outside the middle lamp box (1); the first lap joint part (6) and the second lap joint part (7) are also provided with bolt connecting holes, and connecting bolts are penetrated into the bolt connecting holes, so that sealing connection is formed.
2. A rapid heating apparatus for a semiconductor device according to claim 1, characterized in that the intermediate light box (1) and the edge light box (2) are provided with sealing plates (5) on a side facing the wafer (W) in the semiconductor device; the middle part of the sealing plate (5) is in corresponding and attached sealing connection with the middle lamp box (1) and is parallel to a wafer (W) in the semiconductor equipment; the edge part of the sealing plate (5) is correspondingly and tightly connected with the edge lamp box (2) in a fitting way and is inclined to the wafer (W) in the semiconductor equipment.
3. The rapid heating device for semiconductor equipment according to claim 1, wherein a plurality of intermediate lamp accommodating holes (8) are formed in the intermediate lamp box (1), and the intermediate lamps (3) are positioned in the intermediate lamp accommodating holes (8) in a one-to-one correspondence.
4. A rapid heating apparatus for semiconductor devices as claimed in claim 3, characterized in that the intermediate lamp housing (1) is provided with an intermediate lamp base plate (9) on the side facing away from the wafer (W) in the semiconductor device, the intermediate lamp (3) being connected to the intermediate lamp base plate (9).
5. The rapid heating device for semiconductor equipment according to claim 4, wherein a plurality of edge lamp accommodating holes (10) are formed in the edge lamp box (2), and the edge lamps (4) are positioned in the edge lamp accommodating holes (10) in a one-to-one correspondence manner; the edge lamp box (2) is provided with an edge lamp holder substrate (11) at one side facing away from a wafer (W) in the semiconductor device, and the edge lamp (4) is connected with the edge lamp holder substrate (11).
6. A rapid heating apparatus for semiconductor devices according to any of claims 1-2, characterized in that cooling channels (12) are provided between the intermediate lamps (3) in the intermediate lamp box (1) and between the edge lamps (4) in the edge lamp box (2).
7. A rapid heating apparatus for a semiconductor device according to any of claims 1-2, characterized in that the semiconductor device has a chamber (13), in which chamber (13) a support ring (15) is rotatably connected by means of a rotor (14), the support ring (15) supporting a wafer (W) in the semiconductor device by means of an edge ring (16); the chamber (13) is also provided with an air inlet channel (17) and an air outlet channel (18) at a position above the wafer (W) in the semiconductor device;
a rapid heating device for a semiconductor device is located above a chamber (13), and a sealing plate (5) is connected with the side wall of the chamber (13) in a sealing manner and forms the top of the chamber (13).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310727122.XA CN116453985B (en) | 2023-06-19 | 2023-06-19 | Quick heating device for semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310727122.XA CN116453985B (en) | 2023-06-19 | 2023-06-19 | Quick heating device for semiconductor equipment |
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| Publication Number | Publication Date |
|---|---|
| CN116453985A CN116453985A (en) | 2023-07-18 |
| CN116453985B true CN116453985B (en) | 2023-09-08 |
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|---|---|---|---|
| CN202310727122.XA Active CN116453985B (en) | 2023-06-19 | 2023-06-19 | Quick heating device for semiconductor equipment |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0845863A (en) * | 1994-07-27 | 1996-02-16 | Touyoko Kagaku Kk | Single wafer semiconductor substrate heat treatment device |
| CN1645575A (en) * | 2004-01-20 | 2005-07-27 | 松下电器产业株式会社 | Light irradiation heat treatment method and light irradiation heat treatment apparatus |
| KR20050114527A (en) * | 2004-06-01 | 2005-12-06 | 동부아남반도체 주식회사 | Apparatus of rapid thermal process for thermal equilibrium |
| CN114420585A (en) * | 2021-12-16 | 2022-04-29 | 江苏天芯微半导体设备有限公司 | Reflector plate group, lamp group module, substrate processing equipment and adjusting method of reflector plate group |
| CN116056265A (en) * | 2023-01-11 | 2023-05-02 | 盛吉盛半导体科技(北京)有限公司 | Device for identifying heating unit and heating unit identification method |
-
2023
- 2023-06-19 CN CN202310727122.XA patent/CN116453985B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0845863A (en) * | 1994-07-27 | 1996-02-16 | Touyoko Kagaku Kk | Single wafer semiconductor substrate heat treatment device |
| CN1645575A (en) * | 2004-01-20 | 2005-07-27 | 松下电器产业株式会社 | Light irradiation heat treatment method and light irradiation heat treatment apparatus |
| KR20050114527A (en) * | 2004-06-01 | 2005-12-06 | 동부아남반도체 주식회사 | Apparatus of rapid thermal process for thermal equilibrium |
| CN114420585A (en) * | 2021-12-16 | 2022-04-29 | 江苏天芯微半导体设备有限公司 | Reflector plate group, lamp group module, substrate processing equipment and adjusting method of reflector plate group |
| CN116056265A (en) * | 2023-01-11 | 2023-05-02 | 盛吉盛半导体科技(北京)有限公司 | Device for identifying heating unit and heating unit identification method |
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